CN114875387A

CN114875387A - Thin film deposition device and gas distribution mechanism thereof

Info

Publication number: CN114875387A
Application number: CN202210325415.0A
Authority: CN
Inventors: 朱双双; 刘强; 吴兴华; 黎微明
Original assignee: Jiangsu Leadmicro Nano Technology Co Ltd
Current assignee: Jiangsu Leadmicro Nano Technology Co Ltd
Priority date: 2022-03-29
Filing date: 2022-03-29
Publication date: 2022-08-09
Anticipated expiration: 2042-03-29
Also published as: CN114875387B; CN117737703A; CN117737704A

Abstract

The application discloses a film deposition device and a gas distribution mechanism thereof, wherein the gas distribution mechanism comprises a spraying back plate, a gas homogenizing plate, a flow homogenizing plate and a spraying plate which are sequentially arranged along a first direction; the spraying back plate and the spraying plate jointly form a spraying head, the gas homogenizing plate and the flow homogenizing plate are positioned in the spraying head, a first gas homogenizing cavity is formed between the flow homogenizing plate and the spraying back plate, a second gas homogenizing cavity is formed between the flow homogenizing plate and the spraying plate, and the gas homogenizing plate is arranged in the first gas homogenizing cavity; the spraying back plate is provided with a first through hole at the position facing the gas homogenizing plate; the gas homogenizing plate is provided with a through gas homogenizing hole; the uniform flow plate is provided with a through uniform flow hole for enabling the process gas to enter the second uniform gas cavity from the first uniform gas cavity; the spraying plate is provided with through spraying holes. The application provides a film deposition device and gas distribution mechanism thereof can improve the gas distribution uniformity to improve film deposition uniformity.

Description

Thin film deposition device and gas distribution mechanism thereof

Technical Field

The application relates to the technical field of photovoltaic production, in particular to a film deposition device and a gas distribution mechanism thereof.

Background

With the popularization of solar power generation, the demand of photovoltaic products is larger and larger, and the requirements on equipment for manufacturing the photovoltaic products are higher and higher. The equipment for manufacturing photovoltaic products needs to increase the productivity, the size of the silicon wafer is larger and larger, and the requirement on the efficiency of the cell is higher and higher.

The theoretical efficiency of the heterojunction Cell process reaches more than 28 percent, the heterojunction Cell is the process route with the highest theoretical efficiency at present, the process route has simple processes and only has 4 processes, and the process has more than 5 processes which are reduced compared with the current mainstream PERC (Passivated Emitter and Rear Cell) and TOPCON (Tunnel Oxide Passivated Contact) process routes, thereby having excellent development prospect.

The 4 procedures of the heterojunction battery process flow are texturing cleaning, amorphous silicon film deposition, conductive film deposition and screen printing electrode respectively. Wherein the amorphous silicon thin film can be deposited by PECVD (Plasma Enhanced Chemical Vapor Deposition).

In the prior art, a cavity of part of PECVD film deposition equipment is enlarged in order to improve the productivity, but the film deposition uniformity is reduced after the cavity is enlarged.

Disclosure of Invention

The technical problem that this application mainly solved provides a film deposition device and gas distribution mechanism thereof, can improve the gas distribution homogeneity to improve film deposition homogeneity.

In order to solve the technical problem, the application adopts a technical scheme that: the gas distribution mechanism of the film deposition device comprises:

the spraying device comprises a spraying back plate, an air homogenizing plate, a flow homogenizing plate and a spraying plate which are sequentially arranged along a first direction;

the spraying back plate and the spraying plate jointly form a spraying head, the gas homogenizing plate and the flow homogenizing plate are positioned in the spraying head, a first gas homogenizing cavity is formed between the flow homogenizing plate and the spraying back plate, a second gas homogenizing cavity is formed between the flow homogenizing plate and the spraying plate, and the gas homogenizing plate is arranged in the first gas homogenizing cavity; the spraying back plate is provided with a first through hole at the position facing the gas homogenizing plate; the gas homogenizing plate is provided with a through gas homogenizing hole; the uniform flow plate is provided with a through uniform flow hole, and the uniform flow hole is used for enabling the process gas to enter the second uniform gas cavity from the first uniform gas cavity; the spraying plate is provided with through spraying holes.

Furthermore, the gas distribution mechanism of the film deposition device further comprises a first gas inlet pipe and a gas inlet flange, an outlet of the first gas inlet pipe is connected with the gas inlet flange, and the first gas inlet pipe and the gas inlet flange are positioned on one side of the spray back plate, which is far away from the gas homogenizing plate; the first through hole and the inner wall of the air inlet flange form an air inlet; in the first direction, the diameter of the air inlet is gradually increased, the air equalizing holes and the uniform flow holes are staggered, and the uniform flow holes and the spraying holes are staggered.

Furthermore, the gas distribution mechanism of the film deposition device further comprises at least two first connecting assemblies for fixedly connecting the uniform flow plate, the spraying plate and the spraying back plate.

Further, the first connecting assembly comprises a first fastener, the spray back plate is provided with a second through hole for mounting the first fastener, the uniform flow plate is provided with a third through hole for the first fastener to penetrate through, and the spray plate is provided with a fourth through hole for mounting the first fastener;

the fourth through hole coincides with the position of the spray hole, the spray plate is provided with at least two inclined holes on the periphery of the fourth through hole, one end of each inclined hole is communicated with the flow homogenizing plate and the cavity between the spray plates, and the other end of each inclined hole is communicated with the fourth through hole.

Further, the first connection assembly further comprises:

the boss is positioned between the spraying back plate and the flow equalizing plate, and the height of the boss is greater than or equal to the distance between the spraying back plate and the flow equalizing plate in the first direction; the boss is provided with a fifth through hole for the first fastener to penetrate through;

the positioning ring is positioned between the flow equalizing plate and the spraying plate, and the height of the positioning ring is greater than or equal to the distance between the flow equalizing plate and the spraying plate in the first direction; the positioning ring is provided with a sixth through hole for the first fastener to penetrate through.

Furthermore, the gas distribution mechanism of the thin film deposition device further comprises an insulating plate group positioned on the peripheral sides of the spraying plate and the spraying back plate, in the first direction, one end of the insulating plate group is aligned with the surface of the spraying back plate, which is far away from the spraying plate, and the other end of the insulating plate group exceeds the surface of the spraying plate, which is far away from the spraying back plate;

and/or the insulation plate group comprises a first insulation plate and a second insulation plate, wherein the first insulation plate extends along the first direction, and the second insulation plate extends perpendicular to the first direction.

Another technical scheme adopted by the application is as follows: provided is a thin film deposition apparatus including:

the gas distribution mechanism of any of the above embodiments;

the main body is internally provided with a reaction cavity, and at least part of the gas distribution mechanism is positioned in the reaction cavity; the main body comprises a cavity cover, and the cavity cover is fixedly connected with the spraying back plate;

the support plate is used for containing a product to be processed; the support plate is positioned in the reaction cavity and positioned on one side of the spraying plate, which is back to the spraying back plate.

Further, the side length of the reaction cavity is at least 2 meters.

Further, the thin film deposition apparatus further includes a second connection assembly for connecting the chamber cover and the shower back plate, the second connection assembly including:

a second fastener;

the first insulating ring is positioned between the cavity cover and the spraying back plate, and the second fastener is arranged in the cavity cover and the first insulating ring in a penetrating manner and fixed on the spraying back plate;

a first spacer disposed between the second fastener and the cavity cover;

the first cover plate is arranged on one side, deviating from the spraying back plate, of the cavity cover and is connected with the first isolating piece.

Further, the thin film deposition device also comprises a third connecting assembly for connecting the cavity cover and the spray back plate; the third connecting assembly is positioned at the end part of the spray back plate; the third connection assembly includes:

the spraying back plate is provided with a seventh through hole for the third fastener to penetrate through;

the second insulating ring is positioned between the cavity cover and the spraying back plate; the third fastener is arranged on the spray back plate in a penetrating way and the second insulating ring is fixed on the cavity cover;

the insulating sleeve is arranged in the seventh through hole, and the outer diameter of one side, facing the spray plate, of the insulating sleeve is larger than the outer diameter of one side, away from the spray plate, of the insulating sleeve; the inner wall of the insulating sleeve and the third fastener have a first gap in a second direction; the second direction intersects the first direction;

and the second isolating piece is arranged between the third fastening piece and the spray plate.

Further, the second insulating ring comprises a first ring portion and a second ring portion, the second ring portion is located on the periphery side of the first ring portion, a first cavity is formed between the first ring portion and the second ring portion, and the first cavity is communicated with the outside of the second insulating ring.

Different from the prior art, the beneficial effects of the application are that: the utility model provides a film deposition device's gas distribution mechanism has set gradually along the first direction and has sprayed backplate, the gas homogenizing board, the even flow board and spray the board, the gas homogenizing board is equipped with the even gas pocket that link up, the even flow board is equipped with the even flow hole that link up, it is equipped with the hole that sprays that link up to spray the board, process gas can loop through the even gas pocket, the even flow hole and spray the hole, get into the reaction intracavity and treat the processing product reaction, consequently this gas distribution mechanism can improve the gas distribution homogeneity, thereby improve film deposition homogeneity.

In addition, in the first direction, even gas pocket and even discharge orifice stagger, and even discharge orifice stagger with the hole that sprays to can prevent that local aperture from overlapping and causing the gas distribution inhomogeneous, further improve the gas distribution homogeneity.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts. Wherein:

fig. 1 is a schematic structural diagram of a thin film deposition apparatus and a gas distribution mechanism thereof according to the present embodiment;

fig. 2 is a schematic structural diagram of a first connecting assembly provided in the present embodiment;

fig. 3 is a schematic structural view of an insulation board assembly provided in the present embodiment;

fig. 4 is a schematic structural diagram of a third connecting assembly provided in the present embodiment.

Description of reference numerals:

1. a chamber cover; 9. a second fastener; 10. a first intake pipe; 11. an air inlet flange; 13. a first insulating ring; 14. a second insulating ring; 15. a third fastener; 16. an insulating sleeve; 17. a gasket; 18. a first insulating plate; 19. a second spacer; 20. a second insulating plate; 21. a first screw; 22. a spray plate; 23. a flow homogenizing plate; 24. a boss; 25. a second gas-homogenizing chamber; 26. spraying holes; 27. a first connection assembly; 28. flow homogenizing holes; 29. a gas homogenizing plate; 30. a space ring; 31. a first uniform air cavity; 33. spraying the back plate; 35. a third cover plate; 36. a first fastener; 37. a second screw; 38. a positioning ring; 39. an inclined hole; 40. an air inlet; 41. a gasket; 42. an insulating cap; 43. a first sharp corner; 44. a third sharp corner; 45. a second sharp corner; 46. a side line; 47. a side line; 48. a first ring portion; 49. a second ring portion; 50. a first cavity; 51. a first gap; 52. a second gap; 53. a common edge; 54. a bevel edge; 55. a side line; 57. a third gap;

x: a first direction;

y: a second direction.

Detailed Description

The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.

It will be understood that when an element is referred to as being "disposed on" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may be present. The terms "vertical," "horizontal," "left," "right," and the like as used herein are for illustrative purposes only and do not represent the only embodiments.

Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.

Please refer to fig. 1. The embodiment of the application provides a gas distribution mechanism of a film deposition device, which comprises a spraying back plate 33, a gas homogenizing plate 29, a flow homogenizing plate 23 and a spraying plate 22 which are sequentially arranged along a first direction X.

Wherein, the spraying back plate 33 and the spraying plate 22 together form a spraying head, and the gas homogenizing plate 29 and the flow homogenizing plate 23 are positioned in the spraying head. A first uniform air cavity 31 is formed between the uniform flow plate 23 and the spraying back plate 33, a second uniform air cavity 25 is formed between the uniform flow plate 23 and the spraying plate 22, and the uniform air plate 29 is arranged in the first uniform air cavity 31. The shower back plate 33 is provided with a first through hole at a position facing the gas uniforming plate 29. The gas-equalizing plate 29 is provided with a gas-equalizing hole (not shown) therethrough. The uniform flow plate 23 is provided with a through uniform flow hole 28, and the uniform flow hole 28 is used for leading the process gas to enter the second uniform gas cavity 25 from the first uniform gas cavity 31. The shower plate 22 is provided with through shower holes 26.

According to the gas distribution mechanism of the film deposition device, provided by the embodiment of the application, the process gas can sequentially pass through the gas equalizing hole, the flow equalizing hole 28 and the spraying hole 26 to enter the reaction cavity and react with a product to be processed, so that the gas distribution mechanism can improve the gas distribution uniformity, and the film deposition uniformity is improved.

In the present embodiment, the area of the gas uniformizing plate 29 is equal to or larger than the area of the first through holes, so that the entire process gas flowing out of the first through holes can be uniformized. The area described in this embodiment refers to the area of the surface perpendicular to the first direction X. Preferably, the central lines of the spraying back plate 33, the gas homogenizing plate 29, the flow homogenizing plate 23 and the spraying plate 22 can be overlapped, so that the gas distribution mechanism is symmetrically distributed, and the gas distribution is more uniform.

Preferably, the air distribution mechanism further comprises a first air inlet pipe 10 and an air inlet flange 11. The outlet of the first inlet pipe 10 is connected to an inlet flange 11. The first air inlet pipe 10 and the air inlet flange 11 are positioned on one side of the spray back plate 33, which is far away from the air homogenizing plate 29. The first through holes of the shower back plate 33 and the inner wall of the air intake flange 11 form an air intake 40. In the first direction X, the diameter of the inlet port 40 gradually increases, i.e. the inlet flange 11 is tapered. The intake flange 11 may be a water-cooled flange. A space ring 30 is arranged between the gas homogenizing plate 29 and the spraying back plate 33, so that the gas homogenizing plate 29 is fixedly connected with the spraying back plate 33.

In the present embodiment, the uniform air holes and the uniform flow holes 28 are shifted from each other and the uniform flow holes 28 and the shower holes 26 are shifted from each other in the first direction X, so that the uneven air distribution due to the overlapping of the local small holes can be prevented and the air distribution uniformity can be further improved.

The process gas enters the gas inlet 40 from the first gas inlet pipe 10 through the gas inlet flange 11 and then enters the first gas homogenizing chamber 31. The first air inlet pipe 10 has a high inflow speed, the process gas enters the air inlet flange 11, and the gas diffuses to the periphery due to the gradual reduction and expansion of the volume, so that the speed is reduced, and a first gas homogenizing layer is formed at the position.

The process gas continues to flow to the gas homogenizing plate 29, a small gap is formed between the gas homogenizing plate 29 and the spraying back plate 33, the process gas is blocked by the gas homogenizing plate 29 and then diffuses to the periphery through the gap, meanwhile, the process gas can also diffuse downwards from the gas homogenizing holes, and the gas homogenizing plate 29 forms a second gas homogenizing layer.

Thereafter, the process gas is diffused and filled in the first gas uniformizing chamber 31, and is gradually uniformized, and then flows into the second gas uniformizing chamber 25 through the flow uniformizing holes 28 of the flow uniformizing plate 23, and the flow uniformizing plate 23 forms a third gas uniformizing layer.

Finally, the process gas is diffused and filled in the second gas homogenizing cavity 25, is more uniform, is sprayed out through the spraying holes 26 of the spraying plate 22, uniformly flows to the product to be processed on the surface of the carrier plate, and the spraying plate 22 forms a fourth gas homogenizing layer.

According to the embodiment, the four gas-homogenizing layers ensure that the gas distribution mechanism has excellent gas distribution uniformity, so that the flow field uniformity of the process gas in the film deposition device is improved, and the film deposition uniformity is improved.

In the present embodiment, a uniform plasma field is formed between the lower surface of the shower plate 22 and the carrier plate, and a gap between the lower surface of the shower plate 22 and the carrier plate is required to be uniform, so that the flatness requirement of the lower surface of the shower plate 22 is high, and the deformation of the shower plate 22 is small. The shower plate 22 has a large area (for example, the surface perpendicular to the first direction X may be square, and the side length may be 2 m to 5 m), and the shower plate 22 has a high temperature (for example, may be 200 c to 300 c), and the shower plate 22 is easily deformed by heat or droops.

Therefore, the gas distribution mechanism further comprises at least two first connection assemblies 27. The first connecting assembly 27 is located on the peripheral side of the gas uniformizing plate 29 and is located approximately in the middle of the flow uniformizing plate 23 and the shower plate 22. The first connecting assembly 27 can fixedly connect the uniform flow plate 23, the spraying plate 22 and the spraying back plate 33, so that the middle parts of the uniform flow plate 23 and the spraying plate 22 can be prevented from sagging and deforming, the lower surface flatness of the spraying plate 22 is ensured, the uniformity of an electric field is improved, and the uniformity of film deposition is improved.

Specifically, as shown in FIG. 2, the first connection assembly 27 may include a first fastener 36. The spraying back plate 33 is provided with a second through hole for installing the first fastener 36, the flow equalizing plate 23 is provided with a third through hole for the first fastener 36 to penetrate through, and the spraying plate 22 is provided with a fourth through hole for installing the first fastener 36. The first fastener 36 may be a screw or other fastener having a securing function. One side of the spraying back plate 33 departing from the spraying plate 22 can be provided with a third cover plate 35, and the third cover plate 35 covers the second through hole, so that the spraying back plate 33 can be reinforced.

Wherein the fourth through hole coincides with the location of one of the shower holes 26 where the installation of the first fastener 36 would result in an uneven distribution of the process gas. Therefore, the shower plate 22 is provided with at least two inclined holes 39 on the peripheral side of the fourth through hole, and the extending direction of the inclined holes 39 intersects the first direction X. One end of the inclined hole 39 is communicated with the cavity (i.e. the second air equalizing chamber 25) between the flow equalizing plate 23 and the spraying plate 22, and the other end is communicated with the fourth through hole, so that the process gas can enter the spraying hole 26 below the first fastening piece 36 through the inclined hole 39, the influence caused by the first fastening piece 36 is eliminated, and the uniform gas distribution is ensured.

In addition, to prevent the spray back plate 33, the flow equalizing plate 23, and the spray plate 22 from being compressed and deformed when the first fastening member 36 is tightened, the first connection assembly 27 further includes a boss 24 and a positioning ring 38. Boss 24 is located between shower back plate 33 and flow equalizer plate 23. In the first direction X, the height of the boss 24 is greater than or equal to the distance between the shower back plate 33 and the flow equalizing plate 23. The boss 24 is provided with a fifth through hole through which the first fastening member 36 is inserted. A positioning ring 38 is located between the flow equalizer plate 23 and the shower plate 22. In the first direction X, the height of the positioning ring 38 is greater than or equal to the distance between the flow distribution plate 23 and the shower plate 22. The positioning ring 38 is provided with a sixth through hole for the first fastening member 36 to pass through. By providing the bosses 24 and the positioning ring 38, the gap in the first direction X between the shower back plate 33, the flow equalizing plate 23, and the shower plate 22 can be fixed without being bent and deformed when the first fastening member 36 is tightened. Wherein, the positioning ring 38 can be fixedly connected with the uniform flow plate 23 and the boss 24 through the second screw 37.

In the present embodiment, a high frequency voltage is fed from the conductive plate to the shower back plate 33 and then conducted to the shower plate 22, and the lower surface of the shower plate 22 and the grounded carrier plate form a plasma field. The shower back plate 33, the shower plate 22 and the metal parts therein are all provided with high frequency voltage, which is very easy to form unnecessary and harmful arc discharge with the peripheral metal parts, especially at the sharp corners of the edge, thereby requiring special insulation treatment.

As shown in fig. 1 and 3, the gas distribution mechanism further includes an insulating plate group located on the peripheral side of the shower plate 22 and the shower back plate 33. The set of insulation plates may be fixedly mounted to the shower plate 22. In the first direction X, one end of the insulating plate group is aligned with the surface of the shower back plate 33 facing away from the shower plate 22, and the other end extends beyond the surface of the shower plate 22 facing away from the shower back plate 33.

Specifically, the insulation panel group includes a first insulation panel 18 and a second insulation panel 20, the first insulation panel 18 extending in the first direction X, and the second insulation panel 20 extending perpendicular to the first direction X. The first insulating plate 18 and the second insulating plate 20 have high temperature resistance characteristics. The first insulating plate 18 and the second insulating plate 20 can completely wrap the edge and the sharp corner of the shower plate 22, the common edge 53 of the first insulating plate 18 and the second insulating plate 20 nested with each other can wrap the first sharp corner 43 of the shower plate 22, the

edges

46 and 47 of the second insulating plate 20 can wrap the second sharp corner 45 of the shower plate 22, and the

edges

47 and 55 of the second insulating plate 20 can wrap the third sharp corner 44 of the shower plate 22. The beveled edge 54 of the second insulator plate 20 smoothly transitions from the bottom edge of the second insulator plate 20 to the bottom edge of the shower plate 22 to prevent turbulence to the gas flow, vortex formation, and the like.

Further, the second insulation plate 20 may be mounted to the shower plate 22 by first screws 21. Since the first screw 21 is made of a metal material and is connected to the shower plate 22 having a high frequency voltage, the first screw 21 also has a high frequency voltage. Therefore, the head of the first screw 21 is provided with a threaded hole, and the insulating cap 42 is fastened on the head of the first screw 21 by the slender thread inside the insulating cap 42, so that the first screw 21 is insulated and protected, and the first screw 21 and a bottom metal part are prevented from arcing. A washer 41 is provided between the insulating cap 42 and the first screw 21.

Please refer to fig. 1. The embodiment of the present application further provides a thin film deposition apparatus, which includes a main body, a carrier plate (not shown), and a gas distribution mechanism. The air distribution mechanism may be the air distribution mechanism described in any of the above embodiments, and is not described herein again.

The main body is provided with a reaction chamber (not shown), and at least part of the gas distribution mechanism is positioned in the reaction chamber. The main body comprises a cavity cover 1, and the cavity cover 1 is fixedly connected with a spraying back plate 33. The support plate is used for containing a product to be processed. The carrier plate is located in the reaction chamber and located on a side of the shower plate 22 away from the shower back plate 33.

In this embodiment, the thin film deposition apparatus further includes a second connection assembly for connecting the chamber cover 1 and the shower back plate 33. The second connection assembly includes a second fastener 9, a first insulating ring 13, a first spacer, and a first cap plate. The second fastening member 9 may be a screw or other fastening member having a fixing function.

The first insulating ring 13 is positioned between the cavity cover 1 and the spraying back plate 33, and the second fastener 9 is arranged through the cavity cover 1 and the first insulating ring 13 and fixed on the spraying back plate 33. A first spacer is provided between the second fastening member 9 and the cavity cover 1. The first cover plate is arranged on one side of the cavity cover 1 departing from the spraying back plate 33 and is connected with the first isolating piece.

A third insulating ring can be arranged between the side of the second fastening member 9 away from the shower back plate 33 and the first cover plate. The first spacer and the third insulating ring insulate the second fastening member 9 for the high frequency voltage, preventing the high frequency voltage from being conducted to the chamber cover 1. The first cover plate has a pressing effect on the third insulating ring, and simultaneously has a reinforcing effect on the groove at the position of the cavity cover 1.

In this embodiment, the thin film deposition apparatus further includes a third connection assembly for connecting the chamber cover 1 and the shower back plate 33. Preferably, the second connection assembly is located on a peripheral side of the first connection assembly 27, and the second connection assembly is located approximately in a middle portion of the shower back plate 33. The third connection assembly is located at the end of the shower back plate 33, the second connection assembly being closer to the first connection assembly 27 than the third connection assembly.

As shown in fig. 4, the third connecting assembly includes a third fastener 15, a second insulating ring 14, an insulating sleeve 16, and a second spacer 19. The third fastener 15 may be a screw or other fastener having a fixing function. In the present embodiment, the shower back plate 33 is mounted and fastened to the chamber cover 1 by the second fastening member 9 and the third fastening member 15. Wherein, the orientation of the second fastening piece 9 and the third fastening piece 15 is opposite, so that the connection is more stable and convenient.

The spraying back plate 33 is provided with a seventh through hole for the third fastener 15 to penetrate through. The second insulating ring 14 is located between the chamber cover 1 and the shower back plate 33. The third fastener 15 is arranged through the spray back plate 33 and the second insulating ring 14 and fixed on the cavity cover 1. The insulating sleeve 16 is arranged in the seventh through hole, and the outer diameter of one side of the insulating sleeve 16 facing the shower plate 22 is larger than that of the other side of the insulating sleeve 16 facing away from the shower plate 22, i.e. the insulating sleeve 16 can be step-shaped. The inner wall of the insulating sleeve 16 and the third fastening member 15 have a first gap 51 in the second direction Y. The second spacer 19 is provided between the third fastening member 15 and the shower plate 22. The second direction Y intersects the first direction X. Preferably, the second direction Y is perpendicular to the first direction X. In the present embodiment, the first direction X is a vertical direction, and the second direction Y is a horizontal direction.

Due to the fact that the size of the spraying back plate 33 is large, the temperature difference between the spraying back plate 33 and the cavity cover 1 is large, and large thermal deformation relative displacement exists. The shower back plate 33 and the chamber cover 1 are fixedly connected by a second connecting assembly, approximately in the middle of the shower back plate 33, so that the expansion of the shower back plate 33 is mainly manifested at the ends/periphery, so that the third connecting assembly is provided with a first gap 51.

Preferably, a spacer 17 may be provided between the third fastening member 15 and the insulating sleeve 16. The inner wall of the insulating sleeve 16 and the spacer 17 are provided with a second gap 52 in the second direction Y. When the spray back plate 33 is heated to expand and move leftwards, the third fastener 15 and the gasket 17 are relatively fixed and fixed, the insulating sleeve 16 is driven to move leftwards due to the existence of the first gap 51 and the second gap 52, thermal expansion displacement is released, self damage or other part damage caused by huge thermal stress and thermal deformation generated by the fact that the spray back plate 33 and the spray plate 22 are limited by thermal expansion deformation is prevented, the flatness of the lower surface of the spray plate 22 is ensured, the uniformity of an electric field is improved, and the uniformity of film deposition is improved. The insulating sleeve 16 may be circular to provide good compensation for 360 degrees of thermal expansion distortion.

In this embodiment, the shower back plate 33 has a high frequency voltage, the chamber lid 1 is grounded, and the high frequency voltage of the shower back plate 33 cannot be transmitted to the chamber lid 1, so that an insulation process is performed between the shower back plate 33 and the chamber lid 1. The first insulating ring 13 and the second insulating ring 14 are made of high-temperature-resistant non-metallic materials, and prevent conduction between the spray back plate 33 and the chamber cover 1. Meanwhile, the first insulating ring 13 is provided with a sealing structure for sealing the spraying back plate 33 and the cavity cover 1 to form a vacuum sealing area.

Although the second isolation ring is made of insulating material, the outer surface of the second isolation ring is deposited with a thin film for a long time, and the thin film has conductivity, so the second isolation ring has a special design. The second insulating ring 14 includes a first ring portion 48 and a second ring portion 49, the second ring portion 49 is located on the periphery side of the first ring portion 48, a first cavity 50 is provided between the first ring portion 48 and the second ring portion 49, and the first cavity 50 is communicated with the outside of the second insulating ring 14. Therefore, the risk of film deposition in the first cavity 50 is greatly reduced, the outer surface of the second isolation ring can be prevented from being conducted with the spraying back plate 33 and the cavity cover 1 by film deposition, and the stability of an electric field is ensured.

Since the spray back plate 33 carries high-frequency voltage, the cavity cover 1 is grounded, the cavity cover and the cavity cover cannot be conducted, and the third fastening piece 15 is made of metal and has a conductor function. Therefore, the insulating sleeve 16 is made of a high temperature resistant insulating material, preventing the third fastening member 15 from electrically connecting the shower back plate 33 and the chamber cover 1. The second spacer 19 is installed between the head of the third fastening member 15 and the electrified shower plate 22, and insulates the third fastening member 15 from the shower plate 22. Thus, the high-frequency voltage carried by the shower back plate 33 and the shower plate 22 is prevented from being transmitted to the chamber cover 1.

In the present embodiment, the components such as the spray back plate 33, the spray plate 22, and the uniform flow plate 23 are easily contaminated by the deposition of the thin film and the formation of dust particles during the process, so the spray back plate 33 may be provided with a heating portion therein to heat the components such as the spray back plate 33, the spray plate 22, and the uniform flow plate 23 and the internal gas thereof, on one hand, the temperature of the gas distribution mechanism may be increased to reduce the deposition of the thin film on the surface and the adhesion of the dust, on the other hand, the process gas may be heated to reach or approach the process temperature before the process is performed, thereby improving the uniformity of the thin film deposition and the efficiency of the thin film deposition, and reducing the cost. The heating part may be a heater nested on the upper surface of the shower back plate 33.

Meanwhile, the spraying back plate 33 is provided with high-frequency voltage, and the outgoing line of the heating part of the back plate of the spraying plate 22 is connected with the filter, so that the mutual influence between the high-frequency voltage of the spraying back plate 33 and the heating part and the temperature measuring sensor of the heating part can be eliminated. The cavity cover 1 may be provided with an insulating sleeve through which the lead wire is passed. The insulating sleeve is made of high-temperature-resistant insulating material, so that the high-frequency voltage of the leading-out wire of the heating part is prevented from being transmitted to the cavity cover 1.

In the present embodiment, a third gap 57 is provided between the chamber cover 1 and the shower back plate 33. The thin film deposition apparatus may further include a second gas inlet pipe and a second cover plate. The second inlet pipe is used for conveying inert gas. The second cover plate is arranged on one surface of the cavity cover 1 facing the spraying back plate 33, and the second cover plate and the cavity cover 1 form a purging cavity. The outlet of the second air inlet pipe is connected with the purging cavity. The second cover plate is provided with a plurality of purge holes for communicating the purge cavity with the third gap 57.

The inert gas enters the purging cavity from the second gas inlet pipe and flows into a third gap 57 formed among the cavity cover 1, the spraying back plate 33 and the first insulating ring 13, the process gas is blown away from the third gap 57, the process gas is prevented from forming dust particle pollution by thin film deposition on the surface of a part of the third gap 57, and arcing discharge between the lower surface of the cavity cover 1 and the upper surface of the spraying back plate 33 is prevented.

The shape of the main body is not limited uniquely in the embodiments of the present application, and may be a rectangular parallelepiped, a cylinder, or another three-dimensional shape. Accordingly, the cross-section of the body in a direction perpendicular to the first direction X may be rectangular, circular or other shape. In this embodiment, the cross-section may be square with a side length of at least 2 meters. I.e. the reaction chamber has a side length of at least 2 meters. The embodiment has a large-area cavity, so that a large-area carrier plate and a large-area spray plate 22 can be arranged, and the large-area carrier plate can contain more objects to be processed, thereby improving the productivity and reducing the cost.

The thin film deposition device provided by the embodiment of the application is used for depositing the thin film of the photovoltaic cell piece in the heterojunction process, the process efficiency reaches more than 25%, the efficiency is higher than that of the existing mainstream process and equipment, and the efficiency of the cell piece can be greatly improved. Therefore, the film deposition device improves the efficiency of the battery piece, reduces the processing procedures and reduces the equipment cost.

It should be noted that, in the description of the present specification, the terms "first", "second", and the like are used for descriptive purposes only and for distinguishing similar objects, and no order is present therebetween, and no indication or suggestion of relative importance is to be made. Further, in the description of the present specification, "a plurality" means two or more unless otherwise specified.

Any numerical value recited herein includes all values from the lower value to the upper value, in increments of one unit, provided that there is a separation of at least two units between any lower value and any higher value. For example, if it is stated that the number of a component or a value of a process variable (e.g., temperature, pressure, time, etc.) is from 1 to 90, preferably from 20 to 80, and more preferably from 30 to 70, it is intended that equivalents such as 15 to 85, 22 to 68, 43 to 51, 30 to 32 are also expressly enumerated in this specification. For values less than 1, one unit is suitably considered to be 0.0001, 0.001, 0.01, 0.1. These are only examples of what is intended to be explicitly recited, and all possible combinations of numerical values between the lowest value and the highest value that are explicitly recited in the specification in a similar manner are to be considered.

Unless otherwise indicated, all ranges include the endpoints and all numbers between the endpoints. The use of "about" or "approximately" with a range applies to both endpoints of the range. Thus, "about 20 to about 30" is intended to cover "about 20 to about 30", including at least the endpoints specified.

The term "consisting essentially of …" describing a combination shall include the identified element, ingredient, component or step as well as other elements, ingredients, components or steps that do not materially affect the basic novel characteristics of the combination. The use of the terms "comprising" or "including" to describe combinations of elements, components, or steps herein also contemplates embodiments that consist essentially of such elements, components, or steps. By using the term "may" herein, it is intended to indicate that any of the described attributes that "may" include are optional.

A plurality of elements, components, parts or steps can be provided by a single integrated element, component, part or step. Alternatively, a single integrated element, component, part or step may be divided into separate plural elements, components, parts or steps. The disclosure of "a" or "an" to describe an element, ingredient, component or step is not intended to foreclose other elements, ingredients, components or steps.

The above description is only for the purpose of illustrating embodiments of the present application and is not intended to limit the scope of the present application, and all modifications of equivalent structures and equivalent processes, which are made by the contents of the specification and the drawings of the present application or are directly or indirectly applied to other related technical fields, are also included in the scope of the present application.

Claims

1. The gas distribution mechanism of the film deposition device is characterized by comprising a spraying back plate, a gas homogenizing plate, a flow homogenizing plate and a spraying plate which are sequentially arranged along a first direction;

2. The gas distribution mechanism of the thin film deposition device according to claim 1, further comprising a first gas inlet pipe and a gas inlet flange, wherein an outlet of the first gas inlet pipe is connected to the gas inlet flange, and the first gas inlet pipe and the gas inlet flange are located on one side of the spray back plate away from the gas homogenizing plate; the first through hole and the inner wall of the air inlet flange form an air inlet; in the first direction, the diameter of the air inlet is gradually increased, the air equalizing holes and the uniform flow holes are staggered, and the uniform flow holes and the spraying holes are staggered.

3. The gas distribution mechanism of claim 1, further comprising at least two first connection assemblies for fixedly connecting the uniform flow plate, the shower plate and the shower back plate.

4. The gas distribution mechanism of the thin film deposition apparatus as claimed in claim 3, wherein the first connection assembly comprises a first fastener, the shower back plate is provided with a second through hole for installing the first fastener, the uniform flow plate is provided with a third through hole for the first fastener to pass through, and the shower plate is provided with a fourth through hole for installing the first fastener;

5. The gas distribution mechanism of the thin film deposition apparatus as claimed in claim 4, wherein the first connection assembly further comprises:

6. The gas distribution mechanism of a thin film deposition apparatus according to claim 1, further comprising an insulating plate group located on a peripheral side of the shower plate and the shower back plate, wherein in the first direction, one end of the insulating plate group and a surface of the shower back plate facing away from the shower plate are aligned, and the other end of the insulating plate group extends beyond the surface of the shower plate facing away from the shower back plate;

7. A thin film deposition apparatus, comprising:

the gas distribution mechanism of any one of claims 1-6;

8. The thin film deposition apparatus of claim 7, wherein the reaction chamber has a side length of at least 2 meters.

9. The thin film deposition apparatus of claim 7, further comprising a second connection assembly for connecting the chamber cover and the shower back plate, the second connection assembly comprising:

a second fastener;

a first spacer disposed between the second fastener and the cavity cover;

10. The thin film deposition apparatus according to claim 7, further comprising a third connection assembly for connecting the chamber cover and the shower backing plate; the third connecting assembly is positioned at the end part of the spray back plate; the third connection assembly includes:

11. The thin film deposition apparatus according to claim 10, wherein the second insulating ring includes a first ring portion and a second ring portion, the second ring portion is located on a peripheral side of the first ring portion, a first cavity is provided between the first ring portion and the second ring portion, and the first cavity is communicated with an outside of the second insulating ring.