CN114826185B - 一种声表面滤波器封装方法及结构 - Google Patents
一种声表面滤波器封装方法及结构 Download PDFInfo
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- CN114826185B CN114826185B CN202210562498.5A CN202210562498A CN114826185B CN 114826185 B CN114826185 B CN 114826185B CN 202210562498 A CN202210562498 A CN 202210562498A CN 114826185 B CN114826185 B CN 114826185B
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- 238000000034 method Methods 0.000 title claims abstract description 26
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 23
- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 16
- 238000003466 welding Methods 0.000 claims abstract description 81
- 229910052751 metal Inorganic materials 0.000 claims abstract description 41
- 239000002184 metal Substances 0.000 claims abstract description 41
- 238000005538 encapsulation Methods 0.000 claims abstract description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 15
- 230000007246 mechanism Effects 0.000 claims description 12
- 230000001681 protective effect Effects 0.000 claims description 12
- 238000005096 rolling process Methods 0.000 claims description 12
- 239000007789 gas Substances 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 230000009471 action Effects 0.000 claims description 4
- 230000000712 assembly Effects 0.000 claims description 4
- 238000000429 assembly Methods 0.000 claims description 4
- 238000003825 pressing Methods 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 3
- 238000009434 installation Methods 0.000 claims description 3
- 238000005406 washing Methods 0.000 claims description 3
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 abstract description 10
- 230000008569 process Effects 0.000 abstract description 9
- 239000003292 glue Substances 0.000 abstract description 8
- 239000000758 substrate Substances 0.000 abstract description 8
- 238000010521 absorption reaction Methods 0.000 abstract description 4
- 238000004100 electronic packaging Methods 0.000 abstract description 2
- 239000000155 melt Substances 0.000 description 4
- 230000001154 acute effect Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000012768 molten material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000011897 real-time detection Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
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CN202210562498.5A CN114826185B (zh) | 2022-05-23 | 2022-05-23 | 一种声表面滤波器封装方法及结构 |
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CN202210562498.5A CN114826185B (zh) | 2022-05-23 | 2022-05-23 | 一种声表面滤波器封装方法及结构 |
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CN114826185A CN114826185A (zh) | 2022-07-29 |
CN114826185B true CN114826185B (zh) | 2023-03-10 |
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CN202210562498.5A Active CN114826185B (zh) | 2022-05-23 | 2022-05-23 | 一种声表面滤波器封装方法及结构 |
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Citations (13)
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CN107534429A (zh) * | 2015-07-17 | 2018-01-02 | 株式会社村田制作所 | 弹性波装置及其制造方法 |
CN109462384A (zh) * | 2018-12-28 | 2019-03-12 | 河北时硕微芯科技有限公司 | 一种声表滤波器及制作方法 |
CN110993570A (zh) * | 2019-12-20 | 2020-04-10 | 苏州科阳光电科技有限公司 | 一种晶圆级封装结构及封装方法 |
CN211743127U (zh) * | 2020-05-23 | 2020-10-23 | 浙江蓝晶芯微电子有限公司 | 一种石英晶片的封装结构 |
CN112436817A (zh) * | 2020-12-07 | 2021-03-02 | 苏州晶方半导体科技股份有限公司 | 声表面波滤波芯片封装制造方法及其结构 |
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CN114188473A (zh) * | 2021-10-18 | 2022-03-15 | 吉林大学 | 一种声表面波器件的封装结构及方法 |
CN216356658U (zh) * | 2021-11-06 | 2022-04-19 | 深圳亿康锐达科技有限公司 | 一种具备防护功能的晶振 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014197615A (ja) * | 2013-03-29 | 2014-10-16 | 日本電波工業株式会社 | 電子デバイス及びその製造方法 |
US9331667B2 (en) * | 2014-07-21 | 2016-05-03 | Triquint Semiconductor, Inc. | Methods, systems, and apparatuses for temperature compensated surface acoustic wave device |
CN106301283A (zh) * | 2016-11-07 | 2017-01-04 | 无锡吉迈微电子有限公司 | 声表面波滤波器的封装结构及制作方法 |
US11502067B2 (en) * | 2018-07-26 | 2022-11-15 | Advanced Semiconductor Engineering, Inc. | Package structure and method for manufacturing the same |
JP2020123804A (ja) * | 2019-01-30 | 2020-08-13 | セイコーエプソン株式会社 | 発振器、発振器の製造方法、電子機器および移動体 |
CN114094978B (zh) * | 2022-01-19 | 2022-04-15 | 深圳新声半导体有限公司 | 一种声表面滤波器组去耦封装结构 |
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2022
- 2022-05-23 CN CN202210562498.5A patent/CN114826185B/zh active Active
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US6048433A (en) * | 1996-12-03 | 2000-04-11 | Murata Manufacturing Co., Ltd. | Sealing structure and method of sealing electronic component |
JP2005184309A (ja) * | 2003-12-18 | 2005-07-07 | Matsushita Electric Ind Co Ltd | 弾性表面波デバイス及びその製造方法 |
JP2008199660A (ja) * | 2008-04-24 | 2008-08-28 | Epson Toyocom Corp | 圧電基板、圧電振動素子、圧電振動子、圧電発振器、圧電基板ウェハ及び圧電基板ウェハの製造方法 |
WO2010032982A2 (ko) * | 2008-09-19 | 2010-03-25 | 주식회사 씨에스티 | 음/전 변환 소자 및 그 제조방법 |
CN101814904A (zh) * | 2010-04-24 | 2010-08-25 | 烟台大明电子有限公司 | 石英晶体谐振器及加工工艺 |
CN107534429A (zh) * | 2015-07-17 | 2018-01-02 | 株式会社村田制作所 | 弹性波装置及其制造方法 |
CN109462384A (zh) * | 2018-12-28 | 2019-03-12 | 河北时硕微芯科技有限公司 | 一种声表滤波器及制作方法 |
CN110993570A (zh) * | 2019-12-20 | 2020-04-10 | 苏州科阳光电科技有限公司 | 一种晶圆级封装结构及封装方法 |
CN211743127U (zh) * | 2020-05-23 | 2020-10-23 | 浙江蓝晶芯微电子有限公司 | 一种石英晶片的封装结构 |
CN112436817A (zh) * | 2020-12-07 | 2021-03-02 | 苏州晶方半导体科技股份有限公司 | 声表面波滤波芯片封装制造方法及其结构 |
CN213661583U (zh) * | 2020-12-07 | 2021-07-09 | 苏州晶方半导体科技股份有限公司 | 声表面波滤波芯片封装结构 |
CN114188473A (zh) * | 2021-10-18 | 2022-03-15 | 吉林大学 | 一种声表面波器件的封装结构及方法 |
CN216356658U (zh) * | 2021-11-06 | 2022-04-19 | 深圳亿康锐达科技有限公司 | 一种具备防护功能的晶振 |
Non-Patent Citations (3)
Title |
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NO2气敏LB膜及其微结构传感器研究;谢丹;《中国优秀博硕士学位论文全文数据库 (博士) 信息科技辑》;20020615(第1(2002年)期);I140-46 * |
Reliability study of high-density EBGA packages using the Cu metallized silicon;Liyu Yang 等;《IEEE Transactions on Components and Packaging Technologies》;20091231;第31卷(第3期);702-711 * |
超声表面波应力无损检测技术研究;邵营;《中国优秀硕士学位论文全文数据库 工程科技Ⅰ辑》;20170215(第2(2017年)期);B020-52 * |
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TR01 | Transfer of patent right |
Effective date of registration: 20230531 Address after: 210000 Lishui Economic Development Zone, Nanjing, Jiangsu Province Patentee after: NANJING QINZHI ELECTRONIC TECHNOLOGY CO.,LTD. Address before: 065300 Langfang City, Hebei Province, Dachang Chao Bai River Industrial Area Patentee before: HEBEI SHISHUO MICROCHIP TECHNOLOGY Co.,Ltd. |
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Application publication date: 20220729 Assignee: Jiangsu Xinbao Financial Leasing Co.,Ltd. Assignor: NANJING QINZHI ELECTRONIC TECHNOLOGY CO.,LTD. Contract record no.: X2024980008940 Denomination of invention: A method and structure for packaging surface acoustic filters Granted publication date: 20230310 License type: Exclusive License Record date: 20240704 |
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PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: A method and structure for packaging surface acoustic filters Granted publication date: 20230310 Pledgee: Jiangsu Xinbao Financial Leasing Co.,Ltd. Pledgor: NANJING QINZHI ELECTRONIC TECHNOLOGY CO.,LTD. Registration number: Y2024980027236 |