CN114823824B - Transparent display panel and transparent display device - Google Patents
Transparent display panel and transparent display device Download PDFInfo
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- CN114823824B CN114823824B CN202210378404.9A CN202210378404A CN114823824B CN 114823824 B CN114823824 B CN 114823824B CN 202210378404 A CN202210378404 A CN 202210378404A CN 114823824 B CN114823824 B CN 114823824B
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- 230000005540 biological transmission Effects 0.000 claims abstract description 10
- 239000010410 layer Substances 0.000 claims description 268
- 239000011241 protective layer Substances 0.000 claims description 33
- 239000000463 material Substances 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 13
- 239000011229 interlayer Substances 0.000 claims description 11
- 238000002834 transmittance Methods 0.000 claims description 11
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 239000004568 cement Substances 0.000 description 3
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- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
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- 239000011787 zinc oxide Substances 0.000 description 3
- 206010034960 Photophobia Diseases 0.000 description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 description 2
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- 229910052710 silicon Inorganic materials 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
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- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Sustainable Development (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The invention discloses a transparent display panel and a transparent display device, wherein the transparent display panel comprises a panel main body and a photoelectric sensing structure arranged on one side of the panel main body, which is far away from the first substrate, the photoelectric sensing structure comprises a second substrate, and a second thin film transistor and a photoelectric sensing device which are electrically connected, the photoelectric sensing device is arranged on one side of the second thin film transistor, which is far away from the second substrate, and a photoelectric sensor is arranged corresponding to a light transmission area of the panel main body, so that light can be sensed in the light transmission area, the whole-surface optical sensing of the transparent display device is realized, the application scene of the transparent display device is increased, and the application function diversity is promoted.
Description
Technical Field
The present invention relates to the field of display technologies, and in particular, to a transparent display panel and a transparent display device.
Background
With the progress of image realization technology, in recent years, there has been an increasing demand for transparent display devices, and there is a demand for transparent display in the field of in-vehicle center-control HUDs, televisions, and the like, in which at least a partial area on which information is displayed is transparent to transmit light so that an object or background behind the transparent display panel is visible to a user in front of the panel. However, the application scene for the transparent display device is single at present. The application functions of the multifunctional electric power generator are diversified and further improved.
Disclosure of Invention
The embodiment of the invention provides a transparent display panel and a transparent display device, which are used for solving the technical problem of single application scene of the conventional transparent display panel and transparent display device.
In order to solve the problems, the technical scheme provided by the invention is as follows:
the present invention provides a transparent display panel, comprising:
the panel main body comprises a first substrate and a plurality of pixel units arranged on the first substrate, wherein each pixel unit comprises a light emitting area and a light transmitting area, the light emitting area is provided with a first thin film transistor and a light emitting device which are electrically connected, and the light emitting device is arranged on one side, away from the first substrate, of the first thin film transistor; and
the photoelectric sensing structure is arranged on one side, deviating from the first substrate, of the panel main body, and comprises a second substrate, a second thin film transistor and a photoelectric sensing device, wherein the second thin film transistor and the photoelectric sensing device are electrically connected, the second thin film transistor and the photoelectric sensing device are arranged on one side, close to the first substrate, of the second substrate, the second thin film transistor is arranged on one side, far from the second substrate, of the photoelectric sensor and the light transmission area are correspondingly arranged.
According to the transparent display panel provided by the invention, the panel main body is provided with the hole in the light transmission area, the hole penetrates through the panel main body, and the photoelectric sensor is arranged corresponding to the hole.
According to the transparent display panel provided by the invention, the second thin film transistor comprises:
a semiconductor layer disposed on a side of the second substrate adjacent to the first substrate;
a first gate insulating layer covering one side of the semiconductor layer away from the second substrate;
the first grid electrode is arranged on one side of the first grid electrode insulating layer, which is far away from the second substrate;
a second gate insulating layer covering one side of the first gate away from the second substrate;
the second grid electrode is arranged on one side of the second grid electrode insulating layer, which is far away from the second substrate;
an interlayer dielectric layer which covers one side of the second grid electrode far away from the second substrate; and
the source drain metal layer is arranged on one side of the interlayer dielectric layer, which is far away from the second substrate;
the photoelectric sensing device comprises a first electrode layer, an active layer and a second electrode layer, wherein the second electrode layer and the source drain electrode metal layer are arranged in the same layer, and one of a first electrode and a second electrode of the second electrode layer is electrically connected with the source drain electrode metal layer.
According to the transparent display panel provided by the invention, the material of the active layer is a high-transmittance semiconductor material with photosensitive characteristics; the first electrode layer is a transparent electrode.
According to the transparent display panel provided by the present invention,
the first electrode layer and the first grid electrode or the second grid electrode are arranged on the same layer;
the active layer is arranged on one side of the second grid insulation layer away from the second substrate;
the second electrode layer is arranged on one side of the active layer away from the second substrate;
wherein, the photoelectric sensing structure further includes:
a first protective layer disposed in a gap between the first pole and the second pole; and
and the second protective layer is covered on one side of the active layer and the first protective layer, which is far away from the second substrate.
According to the transparent display panel provided by the invention, the first electrode layer and the first grid electrode or the second grid electrode are arranged on the same layer;
the second electrode layer is arranged on one side of the second gate insulating layer away from the second substrate;
the active layer is disposed in a gap between the first pole and the second pole;
wherein, the photoelectric sensing structure further includes:
and a second protective layer covering the second electrode layer and a side of the active layer away from the second substrate.
According to the transparent display panel provided by the invention, the active layer is arranged on one side of the second grid insulation layer away from the second substrate;
the second electrode layer is arranged on one side of the active layer away from the second substrate;
wherein, the photoelectric sensing structure further includes:
a first protective layer disposed in a gap between the first pole and the second pole; and
the second protective layer is covered on one side of the second electrode layer and the first protective layer, which is far away from the second substrate;
the first electrode layer is arranged on one side of the second protective layer away from the second substrate.
According to the transparent display panel provided by the invention, the second electrode layer is arranged on one side of the second grid insulation layer away from the second substrate;
the active layer is disposed in a gap between the first pole and the second pole;
wherein, the photoelectric sensing structure further includes:
a second protective layer covering the second electrode layer and a side of the active layer away from the second substrate;
the first electrode layer is arranged on one side of the second protective layer away from the second substrate.
According to the transparent display panel provided by the invention, the transparent display panel further comprises an optical adhesive assembly layer, wherein the optical adhesive assembly layer is arranged between the panel main body and the photoelectric sensing structure, and the optical adhesive assembly layer is a transparent adhesive layer.
The invention provides a transparent display device, which comprises the transparent display panel;
and the protective cover plate is arranged on one side of the transparent display panel, which is far away from the photoelectric sensing structure.
The beneficial effects of the invention are as follows: according to the transparent display panel and the transparent display device, the photoelectric sensing structure is arranged on the side, away from the first substrate, of the panel main body, and comprises the second thin film transistor and the photoelectric sensing device which are electrically connected, the photoelectric sensing device is arranged on the side, away from the second substrate, of the second thin film transistor, and the photoelectric sensor is arranged corresponding to the light transmission area of the panel main body, so that light sensitivity can be conducted in the light transmission area, the whole optical light sensitivity of the transparent display device is realized, the functions of safety identification, biological sensing, optical compensation, light energy collection and the like can be added, the application scene of the transparent display device is enriched, and the application function diversity is promoted.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the description of the embodiments will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic cross-sectional structure of a first transparent display panel according to an embodiment of the present invention;
FIG. 2 is a graph showing transmittance versus visible light wavelength according to an embodiment of the present invention;
FIG. 3 is a schematic cross-sectional view of a second transparent display panel according to an embodiment of the present invention;
fig. 4 is a schematic cross-sectional structure of a third transparent display panel according to an embodiment of the present invention;
fig. 5 is a schematic cross-sectional structure of a fourth transparent display panel according to an embodiment of the present invention;
FIG. 6 is a schematic cross-sectional view of a fifth transparent display panel according to an embodiment of the invention
Fig. 7 is a simplified schematic structural diagram of a transparent display device according to an embodiment of the present invention.
Reference numerals illustrate:
100. a transparent display panel; 200. a protective cover plate;
10. a panel main body; 10a, a light emitting region; 10b, a light transmission area; 101b, hole digging; 101. a first substrate; 1010. a second PI layer; 1011. a second buffer layer; 102. a first thin film transistor; 103. a second planarizing layer; 104. an anode; 105. a light emitting device; 106. a pixel definition layer; 107. a second encapsulation layer; 1071. a first inorganic encapsulation layer; 1072. an organic encapsulation layer; 1073. a second inorganic encapsulation layer;
11. a photoelectric sensing structure; 111. a second substrate; 1110. a substrate; 1111. a first PI layer; 1112. a first buffer layer; 112. a second thin film transistor; 1120. a semiconductor layer; 1121. a first gate insulating layer; 1122. a first gate; 1123. a second gate insulating layer; 1124. a second gate; 1125. an interlayer dielectric layer; 1126. a passivation layer; 1127. a source/drain metal layer; 113. a photoelectric sensor; 1130. a first electrode layer; 1131. an active layer; 1132. a second electrode layer; 1132a, a first pole; 1132b, a second pole; 1133. a first protective layer; 1134. a second protective layer; 114. a first planarization layer; 115. a first encapsulation layer;
12. and an optical cement assembly layer.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to fall within the scope of the invention. Furthermore, it should be understood that the detailed description is presented herein for purposes of illustration and description only, and is not intended to limit the invention. In the present invention, unless otherwise indicated, terms of orientation such as "upper" and "lower" are used to generally refer to the upper and lower positions of the device in actual use or operation, and specifically the orientation of the drawing figures; while "inner" and "outer" are for the outline of the device.
Referring to fig. 1, the present invention provides a transparent display panel 100, wherein the transparent display panel 100 includes a panel body 10 and a photo-sensing structure 11; the panel body 10 includes a first substrate 101 and a plurality of pixel units disposed on the first substrate 101, each pixel unit includes a light emitting region 10a and a light transmitting region 10b, the light emitting region 10a is provided with a first thin film transistor 102 and a light emitting device 105 electrically connected, and the light emitting device 105 is disposed on a side of the first thin film transistor 102 remote from the first substrate 101.
The photo-sensing structure 11 is disposed on a side of the panel body 10 away from the first substrate 101, the photo-sensing structure 11 includes a second substrate 111, and a second thin film transistor 112 and a photo-sensing device 113 that are electrically connected and disposed on a side of the second substrate 111 close to the first substrate 101, the photo-sensing device 113 is disposed on a side of the second thin film transistor 112 away from the second substrate 111, and the photo-sensing device 113 is disposed corresponding to the light-transmitting region 10 b.
It should be noted that, the photo-sensing structure 11 is a light sensing array, that is, the photo-sensing structure 11 includes a plurality of second thin film transistors 112 arranged in an array and the photo-sensing device 113, the photo-sensing structure 11 may be a fingerprint recognition sensor, a camera, a structure light sensor, a time-of-flight sensor, a distance sensor, a light sensor, etc., and the photo-sensing device 113 may collect signals through the light-transmitting area 10b, so that the transparent display panel 100 may realize transparent display and simultaneously sense light in the light-transmitting area 10b, thereby implementing an under-screen sensing scheme such as an under-screen fingerprint recognition scheme, an under-screen camera, an under-screen face recognition scheme, an under-screen distance sensing scheme, etc., increasing functions such as security recognition, biosensing, optical compensation, light energy collection, etc., and enriching application scenarios of the transparent display device, and improving application function diversification.
Further, the panel body 10 is formed with a hole 101b in the light-transmitting region 10b, the hole 101b penetrates the panel body 10, and the photo sensor device 113 is disposed corresponding to the hole 101 b. The hole digging 101b is disposed between two adjacent pixel units, and the loss of external light transmitted through the light transmitting area 10b is reduced under the condition that the display of the pixel units in the light emitting area 10a is not affected by the hole digging 101b, so that the transmittance of the external light is further increased.
The hole 101b may be disposed between two adjacent pixel units, or may be disposed between two adjacent sub-pixels, and the specific position of the hole may depend on the size of the space between each sub-pixel or each pixel unit, which is not limited in the embodiment of the present invention.
Specifically, the front projection of the photo-sensor device 113 on the panel body 10 is located in the light-transmitting region 10b, and further, the front projection of the photo-sensor device 113 on the panel body 10 is located in the front projection of the hole 101b on the panel body 10.
Specifically, the hole dig 101b may penetrate an organic film layer including, but not limited to, the pixel definition layer 106 and an inorganic film layer including, but not limited to, a passivation layer, an interlayer dielectric layer, a gate insulating layer, etc. on the panel body 10. The shape of the hole 101b according to the embodiment of the present invention is not limited, and the hole 101b is as large as possible without affecting the normal display.
In the exemplary embodiment of the present invention, the first substrate 101 and the second substrate 111 may be flexible substrate boards, and of course, rigid substrate boards may be used; specifically, the second substrate 111 includes a base plate 1110, a first PI (polyimide) layer 1111, and a first buffer layer 1112, where the first PI layer 1111 is to block the influence of heat generated when a film layer is deposited upward on the photoelectric sensor 113; the first substrate 101 includes a second PI layer 1010 and a second buffer layer 1011, and the second buffer layer 1011 is disposed on a side of the first substrate 101 away from the photo-sensor device 113.
Specifically, the second thin film transistor 112 includes a semiconductor layer 1120, a first gate insulating layer 1121, a first gate 1122, a second gate insulating layer 1123, a second gate 1124, an interlayer dielectric layer 1125, and a source-drain metal layer 1127; the semiconductor layer 1120 is disposed on a side of the second substrate 111 close to the first substrate 101; the first gate insulating layer 1121 covers a side of the semiconductor layer 1120 remote from the second substrate 111; the first gate 1122 is disposed on a side of the first gate insulating layer 1121 away from the second substrate 111; the second gate insulating layer 1123 covers a side of the first gate 1122 away from the second substrate 111; the second gate electrode 1124 is disposed on a side of the second gate insulating layer 1123 away from the second substrate 111; the interlayer dielectric layer 1125 covers a side of the second gate 1124 remote from the second substrate 111; the source-drain metal layer 1127 is disposed on a side of the interlayer dielectric layer 1125 away from the second substrate 111.
The photo-sensing device 113 includes a first electrode layer 1130, an active layer 1131, and a second electrode layer 1132, wherein the second electrode layer 1132 is disposed on the same layer as the source-drain metal layer 1127 for reducing the manufacturing process, one of a first electrode 1132a and a second electrode 1132b of the second electrode layer 1132 is electrically connected to the source-drain metal layer 1127, the first electrode 1132a may be used as one of a source and a drain of the photo-sensing device 113, and the second electrode 1132b may be used as the other of the source and the drain of the photo-sensing device 113.
Specifically, the front projection of the active layer 1131 on the panel body 10 is located in the light-transmitting region 10b, and further, the front projection of the active layer 1131 on the panel body 10 is located in the front projection of the hole 101b on the panel body 10, so that the external light can be completely injected into the active layer 1131.
Specifically, further, the active layer 1131 may have one or more layers, or may have a heterojunction structure. In order to increase the transmittance of the external light entering the photoelectric sensor 113, the material of the active layer 1131 is a high transmittance semiconductor material having photosensitivity, and optionally, the material of the active layer 1131 may be one or more of oxides such as Indium Zinc Oxide (IZO), indium Gallium Zinc Oxide (IGZO), and aluminum zinc oxide (ALZO).
Specifically, the first electrode layer 1130 serves as a gate electrode of the photoelectric sensor 113, and similarly, in order to increase transmittance of external light entering the photoelectric sensor 113, the first electrode layer 1130 is a transparent electrode, and the material of the first electrode layer 1130 may be Indium Tin Oxide (ITO), indium Gallium Zinc Oxide (IGZO), or the like. The second electrode layer 1132 serves as a source and a drain of the photoelectric sensing device, and the second electrode layer 1132 may be an opaque metal, for example, molybdenum, titanium, aluminum, silver, copper, etc.; transparent electrodes such as Indium Tin Oxide (ITO) and Indium Gallium Zinc Oxide (IGZO) may be used.
It should be noted that, an inorganic insulating layer may be disposed between any two of the first electrode layer 1130, the active layer 1131 and the second electrode layer 1132, and the material of the inorganic insulating layer may be one or more of silicon nitride, silicon oxide and silicon oxynitride.
Referring to fig. 2, the inventor has performed experimental verification on the transmittance of the photoelectric sensor 113 provided by the embodiment of the present invention, and the experimental results are described below:
parameters of each film layer of the photoelectric sensor 113 selected in the experiment are specifically: the material of the first electrode layer 1130 is indium tin oxide, and the thickness of the first electrode layer 1130 is 150 nm; the material of the second electrode layer 1132 is indium tin oxide, and the thickness of the second electrode layer 1132 is 150 nanometers; the active layer 1131 is made of zinc aluminum oxide, and the thickness of the active layer 1131 is 10 nanometers; the inorganic insulating layer is made of silicon oxide, and the thickness of the inorganic insulating layer is 200 nanometers. In this case, the light absorption region of the photo sensor device 113 is mainly concentrated in the uv-blue region, and the blue light transmittance of the photo sensor device 113 is >70% and the red-green light transmittance is >90%, thereby realizing transparent photosensitivity in the visible light range.
Further, the photoelectric sensing structure 11 further includes a first planarization layer 114 and a first encapsulation layer 115, where the first planarization layer 114 is disposed on a side of the photoelectric sensing device 113 away from the second substrate 111, and the first encapsulation layer 115 is disposed on a side of the first planarization layer 114 away from the second substrate 111. The first encapsulation layer 115 may be TFE (Thin-Film Encapsulation, thin film encapsulation). The material of the first planarization layer 114 is an organic resin material, and the first planarization layer 114 can improve the problem of high dark current of the photo sensor device 113.
Further, the second thin film transistor 112 further includes a passivation layer 1126, where the passivation layer 1126 is disposed on a side of the interlayer dielectric layer 1125 away from the second substrate 111, and a material of the passivation layer 1126 may be an inorganic film layer.
Specifically, the structure of the first thin film transistor 102 is similar to that of the second thin film transistor 112, and each of the first thin film transistor 102 includes a semiconductor layer, a first gate insulating layer, a first gate, a second gate insulating layer, a second gate, an interlayer dielectric layer, a passivation layer, and a source-drain metal layer, wherein the specific positions of the respective film layers can also refer to the description of the second thin film transistor 112, which is not repeated herein.
The panel body 10 further includes a second planarization layer 103 and a pixel defining layer 106, the second planarization layer 103 covers a side of the first thin film transistor 102 away from the first substrate 101, the anode 104 is disposed on a side of the second planarization layer 103 away from the first substrate 101, and the anode 104 is electrically connected to the source-drain metal layer of the first thin film transistor 102 through a via penetrating the second planarization layer 103; the pixel defining layer 106 defines a plurality of pixel openings, and the light emitting device 105 is disposed in the pixel openings; the panel body 10 further includes a second encapsulation layer 107, where the second encapsulation layer 107 is disposed on a side of the pixel defining layer 106 and the light emitting device 105 away from the first substrate 101, and in the hole 101b, and the second encapsulation layer may adopt a stacked structure of the first inorganic encapsulation layer 1071, the organic encapsulation layer 1072, and the second inorganic encapsulation layer 1073.
In one embodiment, referring to fig. 1 and fig. 3, similar to fig. 1, the photo-sensing device 113 is a bottom gate thin film transistor, and fig. 3 is different from fig. 1 in that the photo-sensing structure 11 further includes a first protection layer 1133 and a second protection layer 1134, and the first electrode layer 1130 is disposed on the same layer as the first gate 1122 or the second gate 1124; the active layer 1131 is disposed on a side of the second gate insulating layer 1123 away from the second substrate 111; the second electrode layer 1132 is disposed on a side of the active layer 1131 away from the second substrate 111, and the first protective layer 1133 is disposed in a gap between the first electrode 1132a and the second electrode 1132 b; the second protective layer 1134 covers the active layer 1131 and a side of the first protective layer 1133 away from the second substrate 111.
In one embodiment, referring to fig. 3, similar to fig. 1, the photo-sensing device 113 in fig. 3 also employs a bottom gate thin film transistor, and the first electrode layer 1130 is disposed on the same layer as the first gate 1122 or the second gate 1124; the second electrode layer 1132 is disposed on a side of the second gate insulating layer 1123 away from the second substrate 111; fig. 3 differs from fig. 1 in that the active layer 1131 is disposed in a gap between the first pole 1132a and the second pole 1132 b; the photo-sensing structure 11 further includes a second protection layer 1134, where the second protection layer 1134 covers the second electrode layer 1132 and a side of the active layer 1131 away from the second substrate 111.
In one embodiment, referring to fig. 4, fig. 4 is similar to fig. 1, and fig. 4 is different from fig. 1 in that the photo-sensing device 113 in fig. 4 is a top gate type thin film transistor, specifically, the photo-sensing structure 11 further includes a first protective layer 1133 and a second protective layer 1134, and the active layer 1131 is disposed on a side of the second gate insulating layer 1123 away from the second substrate 111; the second electrode layer 1132 is disposed on a side of the active layer 1131 away from the second substrate 111; the first protective layer 1133 is disposed in a gap between the first pole 1132a and the second pole 1132 b; the second protective layer 1134 covers the second electrode layer 1132 and a side of the first protective layer 1133 away from the second substrate 111; the first electrode layer 1130 is disposed on a side of the second protective layer 1134 away from the second substrate 111.
In one embodiment, referring to fig. 5, similar to fig. 4, the photo-sensing device 113 in fig. 5 also employs a top gate thin film transistor, and fig. 5 is different from fig. 4 in that the photo-sensing structure 11 further includes a second protection layer 1134, and the second electrode layer 1132 is disposed on a side of the second gate insulation layer 1123 away from the second substrate 111; the active layer 1131 is disposed in a gap between the first pole 1132a and the second pole 1132 b; the second protective layer 1134 covers the second electrode layer 1132 and a side of the active layer 1131 away from the second substrate 111; the first electrode layer 1130 is disposed on a side of the second protective layer 1134 away from the second substrate 111.
The panel body 10 is directly fabricated on one side of the photo-sensing structure 11, that is, after the photo-sensing structure 11 is fabricated, each film layer of the panel body 10 is directly fabricated on the first planarization layer 114 of the photo-sensing structure 11, and the transparent display panel 100 fabricated by using the fabrication method has a higher integration level.
In an embodiment, referring to fig. 6, fig. 6 is different from fig. 1 in that the transparent display panel 100 further includes an optical adhesive assembly layer 12, the optical adhesive assembly layer 12 is disposed between the panel body 10 and the photo-sensing structure 11, and the optical adhesive assembly layer 12 is a transparent adhesive layer. It can be appreciated that the panel body 10 and the photoelectric sensing structure 11 are assembled into a whole structure through the optical cement assembly layer 12, so that a large-size display panel can be manufactured; and, the panel main body 10 and the photoelectric sensing structure 11 are separated, and can be assembled together after being separately prepared, so that the process difficulty can be reduced, and the yield can be improved.
Similarly, the transparent display panel 100 in fig. 3 to 5 may also be assembled with the panel body 10 and the photo-sensing structure 11 through the optical adhesive assembly layer 12, which is not described herein.
Further, the embodiment of the invention also provides a preparation method of the display panel, which comprises the following steps:
providing a substrate 1110;
sequentially depositing a first PI layer 1111 and a first buffer layer 1112 on the substrate 1110;
forming a second thin film transistor 112 on the first buffer layer 1112;
forming a photo sensor device 113 on the second thin film transistor 112;
depositing a first planarizing layer 114 and a first encapsulation layer 115 over the photo-sensing device 113;
depositing a second PI layer 1010 and a second buffer layer 1011 on the first planarization layer 114;
forming a first thin film transistor 102 on the second buffer layer 1011;
forming a pixel defining layer 106 and a light emitting device 105 on the first thin film transistor 102;
forming a cutout 101b penetrating the panel body 10; and
a second encapsulation layer 107 is deposited over the pixel defining layer 106 and the light emitting device 105, and within the hole dig 101 b.
It should be noted that, in the above-described method for manufacturing the transparent display panel 100, the panel body 10 is directly manufactured on the first planarization layer 114 of the photo-sensing structure 11 after the photo-sensing structure 11 is formed, however, it is also possible to form the photo-sensing structure 11 and the panel body 10 separately, and then assemble the photo-sensing device 113 of the photo-sensing structure 11 and the light-transmitting region 10b of the panel body 10 into the transparent display panel 100 through the optical cement assembly layer 12.
Referring to fig. 7, an embodiment of the present invention further provides a transparent display device, where the transparent display device includes the transparent display panel 100 and the protective cover 200 in the above embodiment, and the protective cover 200 is disposed on a side of the transparent display panel 100 away from the photoelectric sensing structure 11; the specific structure of the transparent display panel 100 has been described in detail above, and thus, will not be described herein.
The specific type of the transparent display device is not particularly limited, and the type of the transparent display device commonly used in the art may be, for example, an OLED display, a mobile device such as a mobile phone, a wearable device such as a watch, a VR device, etc., and those skilled in the art may select the transparent display device accordingly according to the specific application of the display device, which is not described herein.
Specifically, the protective cover 200 is a transparent protective cover, and optionally, the protective cover 200 may be an ultrathin glass cover.
The beneficial effects are as follows: according to the transparent display panel and the transparent display device provided by the embodiment of the invention, the photoelectric sensing structure is arranged on one side of the panel main body, which is far away from the first substrate, and comprises the second thin film transistor and the photoelectric sensing device which are electrically connected, the photoelectric sensing device is arranged on one side of the second thin film transistor, which is far away from the second substrate, and the photoelectric sensor is correspondingly arranged with the light transmission area of the panel main body, so that the light can be sensed in the light transmission area, the whole optical sensing of the transparent display device is realized, the functions of safety identification, biological sensing, optical compensation, light energy collection and the like can be added, the application scene of the transparent display device is enriched, and the application function diversity is promoted.
In summary, although the present invention has been described in terms of the preferred embodiments, the preferred embodiments are not limited to the above embodiments, and various modifications and changes can be made by one skilled in the art without departing from the spirit and scope of the invention, and the scope of the invention is defined by the appended claims.
Claims (10)
1. A transparent display panel, comprising:
the panel main body comprises a first substrate and a plurality of pixel units arranged on the first substrate, wherein each pixel unit comprises a light emitting area and a light transmitting area, the light emitting area is provided with a first thin film transistor and a light emitting device which are electrically connected, and the light emitting device is arranged on one side, away from the first substrate, of the first thin film transistor; and
the photoelectric sensing structure is arranged on one side of the panel main body, which is away from the first substrate, and comprises a second substrate, and a second thin film transistor and a photoelectric sensing device which are electrically connected and arranged on one side of the second substrate, which is close to the first substrate, wherein the photoelectric sensing device is arranged on one side of the second thin film transistor, which is away from the second substrate, and the photoelectric sensing device is correspondingly arranged with the light transmission area, and the second thin film transistor is correspondingly arranged with the light emitting area;
the photoelectric sensing device comprises a first electrode layer, an active layer and a second electrode layer, wherein the second electrode layer and the source-drain electrode metal layer are arranged in the same layer, one of a first electrode and a second electrode of the second electrode layer is electrically connected with the source-drain electrode metal layer of the second thin film transistor, and the orthographic projection of the active layer on the first substrate is positioned in the orthographic projection of a gap between the first electrode and the second electrode on the first substrate; the active layer is made of a high-transmittance semiconductor material with photosensitive characteristics, and the first electrode layer is a transparent electrode.
2. The transparent display panel according to claim 1, wherein the panel body is formed with a cutout in the light-transmitting region, the cutout penetrating the panel body, and the photosensor is disposed in correspondence with the cutout.
3. The transparent display panel according to claim 1 or 2, wherein the second thin film transistor comprises:
a semiconductor layer disposed on a side of the second substrate adjacent to the first substrate;
a first gate insulating layer covering one side of the semiconductor layer away from the second substrate;
the first grid electrode is arranged on one side of the first grid electrode insulating layer, which is far away from the second substrate;
a second gate insulating layer covering one side of the first gate away from the second substrate;
the second grid electrode is arranged on one side of the second grid electrode insulating layer, which is far away from the second substrate;
an interlayer dielectric layer which covers one side of the second grid electrode far away from the second substrate; and
the source drain metal layer is arranged on one side of the interlayer dielectric layer, which is far away from the second substrate.
4. The transparent display panel according to claim 3, wherein the material of the active layer is a high transmittance semiconductor material having photosensitive characteristics; the first electrode layer is a transparent electrode.
5. The transparent display panel according to claim 4, wherein,
the first electrode layer and the first grid electrode or the second grid electrode are arranged on the same layer;
the active layer is arranged on one side of the second grid insulation layer away from the second substrate;
the second electrode layer is arranged on one side of the active layer away from the second substrate;
wherein, the photoelectric sensing structure further includes:
a first protective layer disposed in a gap between the first pole and the second pole; and
and the second protective layer is covered on one side of the active layer and the first protective layer, which is far away from the second substrate.
6. The transparent display panel according to claim 4, wherein,
the first electrode layer and the first grid electrode or the second grid electrode are arranged on the same layer;
the second electrode layer is arranged on one side of the second gate insulating layer away from the second substrate;
the active layer is disposed in a gap between the first pole and the second pole;
wherein, the photoelectric sensing structure further includes:
and a second protective layer covering the second electrode layer and a side of the active layer away from the second substrate.
7. The transparent display panel according to claim 4, wherein,
the active layer is arranged on one side of the second grid insulation layer away from the second substrate;
the second electrode layer is arranged on one side of the active layer away from the second substrate;
wherein, the photoelectric sensing structure further includes:
a first protective layer disposed in a gap between the first pole and the second pole; and
the second protective layer is covered on one side of the second electrode layer and the first protective layer, which is far away from the second substrate;
the first electrode layer is arranged on one side of the second protective layer away from the second substrate.
8. The transparent display panel according to claim 4, wherein,
the second electrode layer is arranged on one side of the second gate insulating layer away from the second substrate;
the active layer is disposed in a gap between the first pole and the second pole;
wherein, the photoelectric sensing structure further includes:
a second protective layer covering the second electrode layer and a side of the active layer away from the second substrate;
the first electrode layer is arranged on one side of the second protective layer away from the second substrate.
9. The transparent display panel of claim 1, further comprising an optical glue assembly layer disposed between the panel body and the photo-sensing structure, the optical glue assembly layer being a transparent glue layer.
10. A transparent display device, comprising the transparent display panel of any one of claims 1 to 9;
and the protective cover plate is arranged on one side of the transparent display panel, which is far away from the photoelectric sensing structure.
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