CN110808272A - Display panel, preparation method thereof and display device - Google Patents
Display panel, preparation method thereof and display device Download PDFInfo
- Publication number
- CN110808272A CN110808272A CN201911113335.3A CN201911113335A CN110808272A CN 110808272 A CN110808272 A CN 110808272A CN 201911113335 A CN201911113335 A CN 201911113335A CN 110808272 A CN110808272 A CN 110808272A
- Authority
- CN
- China
- Prior art keywords
- layer
- array
- display panel
- photodiode
- passivation layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1318—Sensors therefor using electro-optical elements or layers, e.g. electroluminescent sensing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
Landscapes
- Engineering & Computer Science (AREA)
- Human Computer Interaction (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Multimedia (AREA)
- Theoretical Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Sustainable Development (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Image Input (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The invention relates to the technical field of display, and discloses a display panel, a preparation method thereof and a display device. The display panel comprises a substrate base plate, a thin film transistor array and a photosensitive diode array which are sequentially arranged on the substrate base plate, and a first passivation layer, a first planarization layer and a second passivation layer which are sequentially arranged between the thin film transistor array and the photosensitive diode array in the direction from the thin film transistor array to the photosensitive diode array; through holes are formed in the first passivation layer, the first planarization layer and the second passivation layer, and the photodiode array is electrically connected with the thin film transistor array through the through holes. Above-mentioned display panel, the integration has photodiode array structural layer, can realize the fingerprint response and the recognition function in display area to the dark current of photodiode structure is lower, and the contrast of fingerprint formation of image is higher, and the formation of image is more clear.
Description
Technical Field
The invention relates to the technical field of display, in particular to a display panel, a preparation method of the display panel and a display device.
Background
Realize at present that optics fingerprint identification sensor and display screen are integrated, mainly form through laminating solitary optics fingerprint identification sensor and display screen. The integration of an optical fingerprint sensor (In Cell integrated form) In an OLED display screen is still In the technological development stage. Specifically, an optical fingerprint identification sensor is integrated In an OLED display screen In an In Cell form, and the specific principle is that a light emitting structure layer and a fingerprint identification structure layer are formed on a substrate by adopting the same preparation process, so that the fingerprint identification structure layer is organically integrated into a display substrate, namely, the fingerprint identification functional structure is embedded into the OLED display screen, and the fingerprint identification function on a display area is realized. At present, the main problem of integrating an optical fingerprint identification sensor In an In Cell form is that the obtained fingerprint image is not clear enough and the application requirement is difficult to realize.
Disclosure of Invention
The invention discloses a display panel, a preparation method thereof and a display device, and aims to provide an OLED display panel with an embedded fingerprint identification function, which can be used for solving the problem that the fingerprint imaging of the embedded fingerprint identification function is not clear enough.
In order to achieve the purpose, the invention provides the following technical scheme:
a display panel comprises a substrate base plate, a thin film transistor array and a photosensitive diode array which are sequentially arranged on the substrate base plate, and a first passivation layer, a first planarization layer and a second passivation layer which are sequentially arranged between the thin film transistor array and the photosensitive diode array in the direction from the thin film transistor array to the photosensitive diode array; through holes are formed in the first passivation layer, the first planarization layer and the second passivation layer, and the photodiode array is electrically connected with the thin film transistor array through the through holes.
In the display panel, the photosensitive diode array structure layer is organically integrated into the display back plate and is electrically connected with the thin film transistor array structure layer, so that the fingerprint sensing and identification functions of the display area can be realized. Specifically, a first passivation layer, a first planarization layer and a second passivation layer are sequentially arranged between the photodiode array structure layer and the thin film transistor array structure layer; the first passivation layer can effectively protect the metal wires of the thin film transistor array structure layer, block water vapor and prevent the metal wires from being corroded by water and oxygen; the first planarization layer can cover the unevenness caused by the metal wiring, so that a flat surface is formed below the photosensitive diode array structure layer, and each film layer structure of the photosensitive diode is flat, the yield of the photosensitive film layer is high, the stress distribution of the film layer is uniform, the electric field distribution is uniform, and the illumination is uniform, so that the problem that the dark current of the photosensitive diode is increased due to the unevenness of the film layer structure can be solved, and the dark current of the photosensitive diode is effectively reduced; the second passivation layer is mainly used as an etching barrier layer, so that damage to the first planarization layer below the second passivation layer in the process of carrying out patterning etching on the photosensitive diode can be avoided, and the smoothness of the first planarization layer and the film layer structure of the photosensitive diode is guaranteed. In summary, the display panel integrates the photodiode array structure layer, so that the fingerprint sensing and identification functions of the display area can be realized, the dark current of the photodiode structure is low, the contrast of fingerprint imaging is high, and imaging is clear.
Optionally, the first planarization layer is a thermosetting resin material.
Optionally, the display panel further includes:
the light-emitting structure is positioned on one side of the photosensitive diode array, which is far away from the substrate base plate, and comprises light-emitting units and pixel defining structures arranged among the light-emitting units;
a second planarization layer between the photodiode array and the light emitting structure; the second planarization layer is made of a thermosetting resin material.
Optionally, the projection of the light emitting structure on the substrate base plate is not overlapped with the projection of the photodiode array on the substrate base plate;
the display panel further includes:
a third planarization layer positioned on one side of the photodiode array facing away from the substrate; the projection of the third planarization layer on the substrate base plate is overlapped with the projection of the photosensitive diode array on the substrate base plate, and the surface of one side of the third planarization layer, which faces away from the photosensitive diode array, is flush with the surface of one side of the light-emitting structure, which faces away from the photosensitive diode array;
the third planarization layer is made of a thermosetting resin material.
Optionally, in the photodiode array, the band gap of the photosensitive film of the photodiode is 1.8eV-2.2 eV.
Optionally, the projection of the pixel defining structure on the substrate base plate overlaps with the projection of the photodiode array on the substrate base plate;
the pixel defining structure is a color-resistant material; the light transmission wavelength of the color resistance material is 380nm-600nm, and the absorption wavelength is more than 600 nm.
Optionally, in the photodiode array, the band gap of the photosensitive film of the photodiode is 1.1eV-2.2 eV.
Optionally, the thermosetting resin material is an organosilicone glass resin material.
Optionally, the first passivation layer is silicon nitride or a compound of silicon nitride and silicon oxide; the second passivation layer is silicon oxide or a compound of silicon oxide and silicon nitride.
A display device comprising the display panel of any one of the above.
A preparation method of a display panel comprises the following steps:
sequentially preparing a thin film transistor array, a first passivation layer, a first planarization layer, a second passivation layer and a photodiode array on the substrate base plate; through holes are formed in the first passivation layer, the first planarization layer and the second passivation layer, and the photodiode array is electrically connected with the thin film transistor array through the through holes.
Drawings
Fig. 1 is a schematic cross-sectional structure diagram of a display panel according to an embodiment of the present invention;
fig. 2 is a schematic cross-sectional structure diagram of a display panel according to another embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As shown in fig. 1 and fig. 2, an embodiment of the present invention provides a display panel, which includes a substrate 1, and a thin film transistor array (including TFTs 2 distributed in an array) and a photodiode array (including PIN photodiodes 3 distributed in an array) sequentially disposed on the substrate 1, and further includes a first passivation layer 41, a first planarization layer 51, and a second passivation layer 42 disposed between the TFT array and the photodiode array and sequentially disposed from the TFT array to the photodiode array; through holes are formed in the first passivation layer 41, the first planarization layer 51 and the second passivation layer 42, and the photodiode array is electrically connected with the TFT array through the through holes.
In the display panel, the PIN photosensitive diode array structure layer is organically integrated into the display back plate and is electrically connected with the TFT array structure layer, so that the fingerprint sensing and identification functions of the display area can be realized. Specifically, a first passivation layer 41, a first planarization layer 51 and a second passivation layer 42 are sequentially arranged between the PIN photodiode array structure layer and the TFT array structure layer; the first passivation layer 41 can effectively protect the metal wires of the TFT array structure layer, block water vapor, and prevent the metal wires from being corroded by water and oxygen; the first planarization layer 51 can cover unevenness caused by metal wiring, so that a flat surface is formed below the PIN photodiode array structure layer, and each film layer structure of the PIN photodiode 3 is flat, the yield of photosensitive film layers is high, the stress distribution of the film layers is uniform, the electric field distribution is uniform, and the illumination is uniform, so that the problem that the dark current of the PIN photodiode 3 is increased due to unevenness of the film layer structure can be solved, and the dark current of the PIN photodiode 3 is effectively reduced; the second passivation layer 42 mainly serves as an etching barrier layer, so that damage to the first planarization layer 51 below in the process of performing patterned etching on the PIN photodiode 3 can be avoided, and the flatness of the film structures of the first planarization layer 51 and the PIN photodiode 3 is ensured. In conclusion, the display panel is integrated with the PIN photosensitive diode array structure layer, so that the fingerprint sensing and identification functions of the display area can be realized, the dark-state current of the PIN photosensitive diode structure is low, the contrast of fingerprint imaging is high, and imaging is clear.
Specifically, as shown in fig. 1 and 2, the photodiodes 3 in the photodiode array correspond to a part of the TFTs 2 in the TFT array one by one, and each photodiode 3 is electrically connected to one corresponding TFT 2 to form a pixel for imaging a fingerprint; another part of the TFTs 2 in the TFT array are in one-to-one correspondence with the light emitting units 61, forming one display pixel.
In a specific embodiment, the first passivation layer 41 may be silicon nitride or a composite of silicon nitride and silicon oxide; the second passivation layer 42 may be silicon oxide or a composite of silicon oxide and silicon nitride. Specifically, silicon nitride (SiNx) has a good water vapor isolation effect, and is very suitable for a water oxygen barrier layer, and silicon oxide (SiOx) has a good corrosion resistance effect, and is very suitable for an etching protective layer.
In a specific embodiment, the first planarization layer 51 is a thermosetting resin material, which may be, for example, a silicone glass resin (SOG).
Specifically, the conventional planarization layer (PLN layer) is a conventional organic resin thin film layer, which has strong absorption and scattering effects on light, and reduces the intensity of light incident into the PIN photodiode 3, so that the light state current is reduced. The thermosetting resin is an optically transparent film having a very high light transmittance, for example, a silicone glass resin (SOG) film layer having a light transmittance of approximately 100%. Therefore, when the display panel provided by the embodiment of the invention is of a bottom emission type structure, that is, when the substrate 1 side is used as the light emitting side of the display panel, the thermosetting resin material is used as the first planarizing layer 51, so that the light intensity emitted from the substrate 1 side to the PIN photodiode 3 can be effectively improved, the light state current of the PIN photodiode 3 can be effectively improved, the contrast of fingerprint imaging can be further improved, and the fingerprint imaging can be clearer.
Specifically, the display panel provided by the embodiment of the present invention may be a bottom emission type structure, that is, one side of the substrate 1 serves as a light emitting side of the display panel, or a top emission type structure, that is, one side of the package cover plate opposite to the substrate 1 in the display panel serves as a light emitting side; since the aperture ratio of the top emission type structure is larger, a high pixel density (high PPI), high resolution display panel can be realized, which is more common in practical research and application. Therefore, the display panel provided by the embodiment of the present invention is exemplified by taking a top emission type structure as an example.
In a specific embodiment, as shown in fig. 1 and fig. 2, the display panel provided in the embodiment of the present invention further includes a second planarization layer 52 and an OLED light-emitting structure, wherein the OLED light-emitting structure is located on a side of the photodiode array facing away from the substrate 1; a second planarizing layer 52 is positioned between the photodiode array and the OLED light emitting structure.
Specifically, the OLED light emitting structure includes light emitting units 61 and pixel defining structures 62 disposed between the light emitting units 61; the light emitting unit 61 may include a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer, and the like; of course, the OLED light emitting structure may further include first electrodes 63 in one-to-one correspondence with the light emitting cells 61; the first electrode 63 may be an anode, and in this case, the light emitting unit 61 includes a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer in sequence from the first electrode 63 to a direction away from the first electrode 63.
Specifically, as shown in fig. 1, the second planarizing layer 52 is a thermosetting resin material.
Specifically, the second planarizing layer 52 may cover unevenness caused by the photodiode array, so that a flat surface is formed below the OLED light emitting structure layer, and thus the OLED light emitting structure layer is smooth, and the yield of the OLED light emitting structure layer is ensured; in addition, the second planarization layer 52 is made of a thermosetting resin material, so that the light transmittance is high, the light intensity emitted from one side of the package cover plate to the PIN photodiode 3 can be effectively improved, that is, the light state current of the PIN photodiode 3 in the top emission structure display panel can be effectively improved, the contrast of fingerprint imaging is improved, and the fingerprint imaging is clearer.
Specifically, as shown in fig. 2, the second planarizing layer 52 may also be a conventional organic resin thin film layer, for example, when the display panel is a bottom emission type structure, the transmittance of the second planarizing layer 52 has a small influence on the fingerprint imaging definition, and in this case, the conventional organic resin thin film layer may be selected as the second planarizing layer 52; further, an insulating protection layer 9 may be further disposed between the photodiode array and the second planarization layer 52, and the insulating protection layer 9 may be a silicon oxynitride (SiON) material layer.
In a specific embodiment, as shown in fig. 1, the projection of the OLED light emitting structure on the substrate 1 does not overlap with the projection of the photodiode array on the substrate 1. I.e. above each photodiode 3 (in the direction towards the encapsulation layer 8) there is no pattern of the pixel defining structure 62, the first electrode 63 and the light emitting unit 61 structure. Specifically, the display panel is provided with light emitting units 61 distributed in an array manner and PIN photodiodes 3 distributed in an array manner, the light emitting units 61 serve as display pixel units and are used for displaying images of the display panel, and the PIN photodiodes 3 serve as pixel units for fingerprint sensing identification and are used for fingerprint identification imaging. The projection of the OLED light-emitting structure is not overlapped with the projection of the array of the photodiodes 3, that is, no pattern of the OLED light-emitting structure (the pixel defining structure 62, the first electrode 63 and the light-emitting unit 61) is arranged above each photodiode 3, so that the influence on the quality of fingerprint identification imaging caused by the reduction of the light intensity incident into the PIN photodiode 3 due to the shielding of the OLED light-emitting structure pattern can be avoided.
Further, as shown in fig. 1, the display panel further includes a third planarizing layer 53 located on a side of the photodiode 3 array facing away from the substrate 1, and a second electrode 64 located on a side of the third planarizing layer 53 facing away from the substrate 1, specifically, the second electrode 64 is a full-layer electrode structure and can be used as a cathode of the OLED device.
Specifically, the projection of the third planarizing layer 53 on the substrate base plate 1 overlaps with the projection of the photodiode array on the substrate base plate 1, and a surface of a side of the third planarizing layer 53 facing away from the photodiode array is flush with a surface of a side of the OLED light emitting structure facing away from the photodiode array. In other words, the third planarizing layer 53 is used to fill up the position above each photodiode 3 where the OLED light emitting structure is not disposed, so that the second electrode 64 film layer prepared above the OLED light emitting structure can be guaranteed to be flat, and thus the display yield can be guaranteed.
Specifically, the third planarizing layer 53 is made of a thermosetting resin material, and has a high light transmittance, so that the light intensity emitted from one side of the package cover plate to the PIN photodiode 3 can be effectively improved, that is, the light state current of the PIN photodiode 3 in the top emission structure display panel can be effectively improved, and thus the contrast of fingerprint imaging is improved, and the fingerprint imaging is clearer.
Specifically, as shown in fig. 1, since the thermal curing type organic glass resin (the third planarizing layer 53) is deposited and filled above the PIN photodiode 3, the light transmittance is high, and in order to block light with a wavelength of more than 600nm in the ambient light from entering the PIN photodiode 3, the band gap of the photosensitive film of the PIN photodiode can be limited to 1.8-2.2 eV. Specifically, the band gap of the photosensitive film of the photosensitive diode 3 is designed to be 1.8eV-2.2eV, so that light with the wavelength being larger than 600nm can not be absorbed by the photosensitive diode 3, and further, the influence of ambient light with the wavelength being larger than 600nm on the signal to noise ratio of the PIN photosensitive diode 3 can be avoided, so that the signal to noise ratio of the PIN photosensitive diode 3 can be improved, and the definition of fingerprint imaging is further improved.
In another specific embodiment, as shown in fig. 2, the projection of the pixel defining structure 62 on the substrate base plate 1 may also overlap with the projection of the photodiode array on the substrate base plate 1; i.e. each photodiode 3 has a pattern of pixel defining structures 62 above it, but without the pattern of light emitting units 61, the projection of the photodiode 3 is located within the projection of the pixel defining structures 62.
Specifically, in this case, the pixel defining structure 62 may be a color-resisting material, the light transmission wavelength of the color-resisting material includes 380nm to 600nm, and the absorption wavelength is greater than 600 nm. I.e. the colour-resist material allows the passage of visible light but prevents the passage of light having a wavelength of more than 600 nm. Like this, can avoid the light wave that wavelength is greater than 600nm in the ambient light to see through the finger and get into PIN photodiode 3 and produce the noise, change the sentence and say, define structure 62 with the pixel and set up to above-mentioned color resistance material, can improve PIN photodiode 3's signal-to-noise ratio to improve fingerprint imaging's definition.
Specifically, as shown in fig. 2, since the PIN photodiode 3 is filled and leveled by depositing a color resist material (third planarizing layer 53) which can absorb light larger than 600nm, the band gap of the photosensitive film of the PIN photodiode 3 can be widened to 1.1-2.2eV, so that the selectivity of the photosensitive film is increased. Of course, the band gap of the photosensitive film of the PIN photodiode 3 in fig. 2 can be limited to 1.8-2.2eV, so that light with a wavelength of more than 600nm in the ambient light can be doubly blocked from being incident into the PIN photodiode 3.
Specifically, as shown in fig. 1, the photodiode 3 includes a bottom electrode 31, a top electrode 32, and a first semiconductor layer 33, a second semiconductor layer 34, and an intrinsic layer 35 between the bottom electrode 31 and the top electrode 32, wherein one of the first semiconductor layer 33 and the second semiconductor layer 34 is a P-type semiconductor layer, and the other is an N-type semiconductor layer. Specifically, the bottom electrode 31 is close to one side of the substrate 1, and is connected with the corresponding source/drain electrode 27 of the TFT 2 through via holes on the first passivation layer 41, the first planarization layer 51 and the second passivation layer 42; the top electrode 32 is adjacent one side of the package cover and exits through the electrode lead 30.
Specifically, as shown in fig. 1, the connection between the first electrode 63 and the corresponding TFT 2 in the OLED light emitting structure is realized through the via holes of the first passivation layer 41, the first planarization layer 51, the second passivation layer 42, and the second planarization layer 52; specifically, a landing electrode 60 may be further disposed between the second passivation layer 42 and the second planarization layer 52 for connection between the first electrode 63 and the corresponding TFT 2, and the landing electrode 60 may be simultaneously formed with the bottom electrode 31 of the PIN photodiode 3 through a one-time patterning process.
Of course, the display panel according to the embodiment of the invention may further include other structures, such as the encapsulation layer 8 and the buffer layer 7 shown in fig. 1, which are not described herein again.
A display device comprising the display panel of any one of the above.
According to the display device, the PIN photosensitive diode array structure layer is organically integrated into the display back plate and is electrically connected with the TFT array structure layer, and the fingerprint sensing and identification functions of the display area can be achieved. And the dark current of the PIN photodiode array structure layer is lower, the contrast of fingerprint imaging is higher, and the imaging is clearer.
Based on the display panel provided by the embodiment of the invention, the embodiment of the invention also provides a preparation method of the display panel, which comprises the following steps:
as shown in fig. 1 and 2, a TFT array, a first passivation layer 41, a first planarization layer 51, a second passivation layer 42 and a photodiode array are sequentially prepared on the substrate base plate 1; through holes are formed in the first passivation layer 41, the first planarization layer 51 and the second passivation layer 42, and the photodiode array is electrically connected with the TFT array through the through holes.
In a specific embodiment, as shown in fig. 1 and fig. 2, the method for manufacturing a display panel may further include the following steps:
forming a second planarizing layer 52 on the photodiode array; the second planarization layer 52 is a thermosetting resin material;
an OLED light emitting structure including light emitting cells 61 and pixel defining structures 62 disposed between the light emitting cells 61 is formed on the second planarization layer 52.
Exemplarily, as shown in fig. 1, the projection of the OLED light emitting structure on the substrate 1 and the projection of the photodiode array on the substrate 1 do not overlap, i.e. when the pixel definition structure (PDL)62 is patterned, the PDL layer above the PIN photodiode 3 is removed, and accordingly, there is no pattern of the light emitting unit 61 above the PIN photodiode 3.
Further, as shown in fig. 1, the method for manufacturing a display panel further includes: a third planarization layer 53 is formed on the photodiode array, a projection of the third planarization layer 53 on the substrate base plate 1 overlaps with a projection of the photodiode array on the substrate base plate 1, and a surface of one side of the third planarization layer 53 facing away from the photodiode array is flush with a surface of one side of the OLED light emitting structure facing away from the photodiode array.
Specifically, the third planarizing layer 53 is a thermosetting resin material.
Specifically, as shown in fig. 1, after the third planarizing layer 53 is prepared, a step of preparing a second electrode 64 above the third planarizing layer 53 and the OLED light emitting structure is further included, and specifically, the second electrode 64 is a full-layer electrode structure and can serve as a cathode of the OLED device.
Exemplarily, as shown in fig. 2, a projection of the pixel defining structure 62 on the substrate base plate 1 overlaps a projection of the photodiode array on the substrate base plate 1; i.e., the pixel definition structure (PDL)62, is patterned, without removing the PDL layer above the PIN photodiode 3, the PIN photodiode 3 is provided with the pattern of the pixel definition structure 62 thereon. Specifically, the pixel defining structure 62 is made of a color-resistant material; the light transmission wavelength of the color resistance material is 380nm-600nm, and the absorption wavelength is more than 600 nm.
Of course, the above embodiments are only specific examples of the preparation method according to the embodiments of the present invention, and the preparation method according to the embodiments of the present invention may further include preparation steps of other structures, which are not described herein in detail.
For example, the method for manufacturing a display panel provided by the embodiment of the present invention may include the following specific processes: as shown in FIG. 1, preparing a buffer layer 7 on a substrate 1, preparing an active layer 21 of a TFT 2, preparing a gate insulating layer 22, preparing a gate 23 of the TFT 2, heavily doping the active layer 21 to form an ohmic contact layer, preparing a first insulating layer 24, preparing a storage capacitor 25, preparing a second insulating layer 26, preparing a via hole of the ohmic contact layer, preparing a source/drain electrode 27 of the TFT 2, preparing a first passivation layer 41, preparing a first planarization layer 51, preparing a second passivation layer 42, preparing a via hole for connecting the bottom electrode 31 and the via hole for connecting the overlap electrode 60 with the source/drain electrode 27, preparing a pattern for the bottom electrode 31 and a pattern for the overlap electrode 60 of a photodiode 3, preparing a first semiconductor layer 33 (N-type semiconductor layer or P-type semiconductor layer) of the photodiode 3, preparing an intrinsic layer 35 of the photodiode 3, preparing a second semiconductor layer 34 (P-type semiconductor layer or N-type semiconductor layer) of the photodiode 3, preparing a top electrode 32 of the photodiode 3 Layer-forming the unit pattern of the photodiode 3 by photolithography-preparing the second planarizing layer 52 and its via-holes-preparing the pattern of the first electrode 63 of the OLED light-emitting structure and the pattern of the lead 30 of the top electrode 32 of the photodiode 3-preparing the pattern of the pixel defining structure 62 of the OLED light-emitting structure-preparing the OLED light-emitting unit 61-preparing the third planarizing layer 53-preparing the second electrode 64 of the OLED-preparing the OLED encapsulation layer 8.
It will be apparent to those skilled in the art that various changes and modifications may be made in the embodiments of the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (11)
1. The display panel is characterized by comprising a substrate base plate, a thin film transistor array and a photosensitive diode array which are sequentially arranged on the substrate base plate, and a first passivation layer, a first planarization layer and a second passivation layer which are sequentially arranged between the thin film transistor array and the photosensitive diode array in the direction from the thin film transistor array to the photosensitive diode array; through holes are formed in the first passivation layer, the first planarization layer and the second passivation layer, and the photodiode array is electrically connected with the thin film transistor array through the through holes.
2. The display panel according to claim 1, wherein the first planarizing layer is a thermosetting resin material.
3. The display panel of claim 1, further comprising:
the light-emitting structure is positioned on one side of the photosensitive diode array, which is far away from the substrate base plate, and comprises light-emitting units and pixel defining structures arranged among the light-emitting units;
a second planarization layer between the photodiode array and the light emitting structure; the second planarization layer is made of a thermosetting resin material.
4. The display panel of claim 3, wherein a projection of the light emitting structure on the substrate base plate does not overlap a projection of the photodiode array on the substrate base plate;
the display panel further includes:
a third planarization layer positioned on one side of the photodiode array facing away from the substrate; the projection of the third planarization layer on the substrate base plate is overlapped with the projection of the photosensitive diode array on the substrate base plate, and the surface of one side of the third planarization layer, which faces away from the photosensitive diode array, is flush with the surface of one side of the light-emitting structure, which faces away from the photosensitive diode array;
the third planarization layer is made of a thermosetting resin material.
5. The display panel according to claim 4, wherein the photosensitive thin film band gap of the photodiode in the photodiode array is 1.8eV to 2.2 eV.
6. The display panel of claim 3, wherein a projection of the pixel defining structure on the substrate base plate overlaps a projection of the photodiode array on the substrate base plate;
the pixel defining structure is a color-resistant material; the light transmission wavelength of the color resistance material is 380nm-600nm, and the absorption wavelength is more than 600 nm.
7. The display panel according to claim 6, wherein the photosensitive thin film band gap of the photodiode in the photodiode array is 1.1eV to 2.2 eV.
8. The display panel according to any one of claims 2 to 7, wherein the thermosetting resin material is a silicone glass resin material.
9. The display panel according to any one of claims 1 to 7, wherein the first passivation layer is silicon nitride or a composite of silicon nitride and silicon oxide; the second passivation layer is silicon oxide or a compound of silicon oxide and silicon nitride.
10. A display device characterized by comprising the display panel according to any one of claims 1 to 9.
11. A preparation method of a display panel is characterized by comprising the following steps:
sequentially preparing a thin film transistor array, a first passivation layer, a first planarization layer, a second passivation layer and a photodiode array on the substrate base plate; through holes are formed in the first passivation layer, the first planarization layer and the second passivation layer, and the photodiode array is electrically connected with the thin film transistor array through the through holes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911113335.3A CN110808272B (en) | 2019-11-14 | 2019-11-14 | Display panel, preparation method thereof and display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911113335.3A CN110808272B (en) | 2019-11-14 | 2019-11-14 | Display panel, preparation method thereof and display device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110808272A true CN110808272A (en) | 2020-02-18 |
| CN110808272B CN110808272B (en) | 2022-01-18 |
Family
ID=69502697
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911113335.3A Active CN110808272B (en) | 2019-11-14 | 2019-11-14 | Display panel, preparation method thereof and display device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110808272B (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111509014A (en) * | 2020-04-27 | 2020-08-07 | 京东方科技集团股份有限公司 | Display substrate, preparation method thereof and display device |
| CN111509010A (en) * | 2020-04-26 | 2020-08-07 | 京东方科技集团股份有限公司 | O L ED display substrate and preparation method thereof |
| CN111863912A (en) * | 2020-07-28 | 2020-10-30 | 京东方科技集团股份有限公司 | OLED display panel with fingerprint identification function, display device and preparation method |
| CN112436037A (en) * | 2020-11-23 | 2021-03-02 | 京东方科技集团股份有限公司 | Display device, display panel and manufacturing method thereof |
| CN112466916A (en) * | 2020-11-19 | 2021-03-09 | 北京大学深圳研究生院 | In-screen sensing device structure of display panel and display device |
| CN113611719A (en) * | 2021-07-30 | 2021-11-05 | 合肥维信诺科技有限公司 | Photosensitive module, preparation method thereof, fingerprint identification module and X-ray detector |
| WO2021248565A1 (en) * | 2020-06-11 | 2021-12-16 | 武汉华星光电技术有限公司 | Pin photosensitive device, manufacturing method therefor, and display panel |
| WO2021249178A1 (en) * | 2020-06-09 | 2021-12-16 | 京东方科技集团股份有限公司 | Display panel and display apparatus |
| WO2022099587A1 (en) * | 2020-11-13 | 2022-05-19 | 京东方科技集团股份有限公司 | Organic electroluminescent display substrate and fabrication method therefor, display panel, and display apparatus |
| WO2023050115A1 (en) * | 2021-09-29 | 2023-04-06 | 京东方科技集团股份有限公司 | Display panel, display apparatus, and method for manufacturing display panel |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20170033315A1 (en) * | 2015-07-30 | 2017-02-02 | Samsung Display Co., Ltd. | Method of manufacturing display device |
| CN108258024A (en) * | 2018-01-29 | 2018-07-06 | 上海天马微电子有限公司 | Display panel and display device |
| CN109285870A (en) * | 2018-09-28 | 2019-01-29 | 京东方科技集团股份有限公司 | Display base plate and preparation method thereof, display panel |
| CN109670475A (en) * | 2018-12-28 | 2019-04-23 | 上海天马有机发光显示技术有限公司 | Light sensation mould group and display panel |
-
2019
- 2019-11-14 CN CN201911113335.3A patent/CN110808272B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20170033315A1 (en) * | 2015-07-30 | 2017-02-02 | Samsung Display Co., Ltd. | Method of manufacturing display device |
| CN108258024A (en) * | 2018-01-29 | 2018-07-06 | 上海天马微电子有限公司 | Display panel and display device |
| CN109285870A (en) * | 2018-09-28 | 2019-01-29 | 京东方科技集团股份有限公司 | Display base plate and preparation method thereof, display panel |
| CN109670475A (en) * | 2018-12-28 | 2019-04-23 | 上海天马有机发光显示技术有限公司 | Light sensation mould group and display panel |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111509010A (en) * | 2020-04-26 | 2020-08-07 | 京东方科技集团股份有限公司 | O L ED display substrate and preparation method thereof |
| CN111509010B (en) * | 2020-04-26 | 2023-08-29 | 京东方科技集团股份有限公司 | OLED display substrate and preparation method thereof |
| CN111509014A (en) * | 2020-04-27 | 2020-08-07 | 京东方科技集团股份有限公司 | Display substrate, preparation method thereof and display device |
| WO2021218425A1 (en) * | 2020-04-27 | 2021-11-04 | 京东方科技集团股份有限公司 | Display substrate and manufacturing method therefor, and display device |
| WO2021249178A1 (en) * | 2020-06-09 | 2021-12-16 | 京东方科技集团股份有限公司 | Display panel and display apparatus |
| US11404594B2 (en) | 2020-06-11 | 2022-08-02 | Wuhan China Star Optoelectronies Technology Co., Ltd. | Positive-intrinsic-negative (PIN) photosensitive device, manufacturing method thereof, and display panel |
| WO2021248565A1 (en) * | 2020-06-11 | 2021-12-16 | 武汉华星光电技术有限公司 | Pin photosensitive device, manufacturing method therefor, and display panel |
| CN111863912A (en) * | 2020-07-28 | 2020-10-30 | 京东方科技集团股份有限公司 | OLED display panel with fingerprint identification function, display device and preparation method |
| WO2022099587A1 (en) * | 2020-11-13 | 2022-05-19 | 京东方科技集团股份有限公司 | Organic electroluminescent display substrate and fabrication method therefor, display panel, and display apparatus |
| CN112466916A (en) * | 2020-11-19 | 2021-03-09 | 北京大学深圳研究生院 | In-screen sensing device structure of display panel and display device |
| CN112436037A (en) * | 2020-11-23 | 2021-03-02 | 京东方科技集团股份有限公司 | Display device, display panel and manufacturing method thereof |
| CN112436037B (en) * | 2020-11-23 | 2024-02-27 | 京东方科技集团股份有限公司 | Display device, display panel and manufacturing method thereof |
| CN113611719A (en) * | 2021-07-30 | 2021-11-05 | 合肥维信诺科技有限公司 | Photosensitive module, preparation method thereof, fingerprint identification module and X-ray detector |
| WO2023050115A1 (en) * | 2021-09-29 | 2023-04-06 | 京东方科技集团股份有限公司 | Display panel, display apparatus, and method for manufacturing display panel |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110808272B (en) | 2022-01-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110808272B (en) | Display panel, preparation method thereof and display device | |
| CN110504275B (en) | Array substrate, manufacturing method thereof, display panel and display device | |
| US20200411608A1 (en) | Electronic substrate, manufacturing method thereof, and display panel | |
| US10803282B2 (en) | Self-luminous display pixel | |
| US11568673B2 (en) | Array substrate and method for manufacturing the same, method and assembly for detecting light, and display device | |
| US10580839B2 (en) | Self-luminous display pixel | |
| US9614115B2 (en) | Semiconductor device and method for manufacturing the same | |
| EP1865559B1 (en) | Organic light-emitting display device and method for fabricating the same | |
| US20210158007A1 (en) | Fingerprint recognition sensor and manufacturing method thereof, and display device | |
| KR20120094430A (en) | Photoelectric conversion device and electronic apparatus | |
| CN110364542B (en) | Active matrix substrate and X-ray image pickup panel provided with active matrix substrate | |
| CN110098209B (en) | Active matrix substrate and X-ray image pickup panel including the same | |
| CN112563308B (en) | Display substrate, preparation method thereof and display device | |
| US20230345770A1 (en) | Display device and method of manufacturing the same | |
| CN108807556B (en) | Optical sensing device, manufacturing method thereof, display device and display equipment | |
| CN111081724A (en) | Thin film transistor array substrate and digital X-ray detector including the same | |
| US20240107855A1 (en) | Display panel | |
| CN113711362B (en) | Image sensor array device including thin film transistor and organic photodiode | |
| CN110164946B (en) | Display substrate, manufacturing method and display device | |
| US20210226079A1 (en) | Pin device and manufacturing method thereof, photosensitive device and display device | |
| CN110970481B (en) | Display substrate, preparation method thereof and display device | |
| US11335706B2 (en) | Thin film transistor array substrate for high-resolution digital X-ray detector and high-resolution digital X-ray detector including the same | |
| CN111106134B (en) | Active matrix substrate and X-ray imaging panel provided with same | |
| CN109031819B (en) | Display panel, control method of display panel and display device | |
| CN114551499B (en) | Display screen and electronic equipment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |