CN114823297A - Photoresist removing process and semiconductor manufacturing process - Google Patents
Photoresist removing process and semiconductor manufacturing process Download PDFInfo
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- CN114823297A CN114823297A CN202210412459.7A CN202210412459A CN114823297A CN 114823297 A CN114823297 A CN 114823297A CN 202210412459 A CN202210412459 A CN 202210412459A CN 114823297 A CN114823297 A CN 114823297A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0272—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers for lift-off processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0331—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers for lift-off processes
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Abstract
The invention provides a photoresist removing process and a semiconductor manufacturing process, and relates to the technical field of semiconductor manufacturing processes. The photoresist removing process comprises the following steps: stripping the photoresist on the substrate and obtaining the substrate attached with the residual photoresist; and putting the substrate attached with the residual photoresist into the chamber, adjusting the ambient temperature in the chamber to be more than or equal to a preset temperature, continuously introducing inert gas into the chamber, and simultaneously introducing hydrogen-containing gas into the chamber at intervals of a first time to remove the residual photoresist on the substrate. The photoresist removing process provided by the invention can effectively remove residual photoresist by utilizing the ambient temperature which is more than or equal to the preset temperature (the preset temperature can be 290-310 ℃) and the hydrogen-containing gas, and can prevent the substrate from being damaged due to the fact that the substrate is continuously in the high-temperature high-proportion hydrogen-containing gas environment for a long time while removing the photoresist, thereby improving the product yield.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing processes, in particular to a photoresist removing process and a semiconductor manufacturing process.
Background
In the conventional manufacturing process, a photoresist is coated on a substrate, the substrate is exposed to light to develop the photoresist, a mask pattern is etched by a dry method or a wet method, and the photoresist is stripped. In the photoresist stripping, the photoresist is usually removed by spraying high-pressure NMP (N-methylpyrrolidone, abbreviated as NMP), but this method cannot completely remove the photoresist, and therefore, after the photoresist is stripped, the residual photoresist needs to be removed by using a hydrogen-containing gas such as ammonia gas. After the residual photoresist is removed, the substrate after the photoresist is removed is plated in a PECVD (Plasma Enhanced Chemical vapor Deposition, abbreviated as PECVD) apparatus, so that the manufacturing process of the semiconductor can be completed.
However, in the semiconductor manufacturing process, when the residual photoresist is removed by using hydrogen-containing gas such as ammonia gas, the ambient temperature is usually kept at a high temperature of not less than 290 ℃, so that the substrate is required to be kept in a high-temperature high-proportion hydrogen-containing gas environment for a long time, and the substrate is easily damaged.
Disclosure of Invention
The present invention is directed to a photoresist removing process and a semiconductor manufacturing process, so as to solve the technical problem existing in the prior art that when the residual photoresist is removed in the prior semiconductor manufacturing process, the ambient temperature is usually kept at a high temperature, such as not lower than 290 ℃, so that the substrate needs to be kept in a high-temperature high-proportion hydrogen-containing gas environment for a long time, thereby causing easy damage to the substrate.
In a first aspect, the present invention provides a photoresist removal process, comprising:
s1: stripping the photoresist on the substrate and obtaining the substrate attached with the residual photoresist;
s2: and putting the substrate attached with the residual photoresist into a chamber, adjusting the environmental temperature in the chamber to be more than or equal to a preset temperature, continuously introducing inert gas into the chamber, and simultaneously introducing hydrogen-containing gas into the chamber at intervals of a first time so as to remove the residual photoresist on the substrate.
In an alternative embodiment, in step S2, the hydrogen containing gas is introduced into the chamber for a cumulative time equal to half of the total time for which the inert gas is continuously introduced.
In an alternative embodiment, in step S2, the hydrogen-containing gas is introduced into the chamber for a second period of time, wherein the second period of time is equal to the first period of time.
In an alternative embodiment, the first and second time periods are each 8-12 s.
In an alternative embodiment, in step S2, after the hydrogen-containing gas is introduced into the chamber for the second period of time, the hydrogen-containing gas is introduced into the chamber at intervals of the first period of time.
In an alternative embodiment, in step S2, the amount of the hydrogen-containing gas introduced in multiple times is sequentially decreased.
In an alternative embodiment, during two consecutive passes of the hydrogen-containing gas, the amount of the hydrogen-containing gas passing in the next pass is reduced by 8-12% of the amount of the hydrogen-containing gas passing in the previous pass.
In an alternative embodiment, the inert gas is continuously supplied for a total time of 2-5min in step S2.
In an alternative embodiment, in step S2, the ambient temperature within the chamber is 310-.
In a second aspect, the present invention provides a semiconductor manufacturing process, including the photoresist removal process according to any one of the preceding embodiments, and including, after step S2:
s3: and coating the substrate with the residual photoresist removed in the chamber.
The photoresist removing process provided by the invention comprises the following steps of S1: stripping the photoresist on the substrate and obtaining the substrate attached with the residual photoresist; s2: and putting the substrate attached with the residual photoresist into the chamber, adjusting the ambient temperature in the chamber to be more than or equal to a preset temperature, continuously introducing inert gas into the chamber, and simultaneously introducing hydrogen-containing gas into the chamber at intervals of a first time to remove the residual photoresist on the substrate. The preset temperature is the minimum temperature required by hydrogen-containing gas to treat the residual photoresist, and the preset temperature can be 290-310 ℃. The photoresist removing process provided by the invention firstly performs the step S1 to strip the photoresist on the substrate of the semiconductor, and after the step S1, most of the photoresist on the substrate is stripped, but the residual photoresist still remains. Since the hydrogen-containing gas is a reducing gas, the hydrogen-containing gas in the chamber may be plasma-reacted at an ambient temperature greater than or equal to a predetermined temperature, and the hydrogen-containing gas forming the plasma may be used to remove the residual photoresist, when the photoresist removal process of the present invention is used to remove the residual photoresist, step S2 may be performed in the chamber after step S1 until the residual photoresist is removed. The chamber may be a PECVD apparatus or an ashing apparatus. Further, step S1 and step S2 may be performed in the chamber, and at this time, to implement step S1 and step S2, the gas introduced into the chamber, the ambient temperature, and the reaction time may be adjusted respectively corresponding to step S1 and step S2, compared to the prior art, when step S1 and step S2 are performed in the chamber, the substrate does not need to be transferred between devices, and oxygen does not need to be used to remove the residual photoresist, and at this time, the photoresist removal process may not only effectively improve the removal efficiency, and prevent the substrate from being in contact with the outside air to generate an oxidation reaction when the substrate is transferred between devices, but also may prevent the substrate from being in contact with excessive oxygen during the removal process to generate an oxidation reaction, so that the quality of the substrate may be ensured, and the yield of the product may be improved. In addition, in the step S2, hydrogen-containing gas is introduced into the chamber every first time interval, so that the substrate can be prevented from being damaged due to being continuously in a high-temperature high-proportion hydrogen-containing gas environment for a long time on the premise of ensuring removal of the residual photoresist, and the product yield can be improved.
Compared with the prior art, the photoresist removing process provided by the invention can remove residual photoresist on the substrate in the chamber with the ambient temperature being greater than or equal to the preset temperature by utilizing the hydrogen-containing gas, and the hydrogen-containing gas is introduced every other first time, so that the substrate can be prevented from being damaged due to the fact that the substrate is continuously in the high-temperature high-proportion hydrogen-containing gas environment for a long time on the premise of ensuring that the residual photoresist is removed, and the product yield can be further improved.
The semiconductor manufacturing process provided by the invention comprises the photoresist removing process and the step S3 after the step S2: and coating the substrate with the residual photoresist removed in the chamber. The semiconductor manufacturing process provided by the invention comprises the photoresist removing process, so the semiconductor manufacturing process provided by the invention has the same beneficial effect as the photoresist removing process, and the step of coating the substrate can be integrated in the chamber, thereby further improving the manufacturing efficiency of the semiconductor.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a schematic flow chart of a photoresist removal process provided by an embodiment of the present invention;
FIG. 2 is a schematic diagram of a partial structure of a substrate with a photoresist attached thereon according to an embodiment of the present invention;
FIG. 3 is a schematic view of a partial structure of a substrate and a residual photoresist according to an embodiment of the present invention;
fig. 4 is a flowchart illustrating a semiconductor manufacturing process according to an embodiment of the invention.
Icon: 1-a substrate; 2-photoresist.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Some embodiments of the invention are described in detail below with reference to the accompanying drawings. The embodiments described below and the features of the embodiments can be combined with each other without conflict.
Example (b):
as shown in fig. 1, the photoresist removing process provided in this embodiment includes:
step S1: stripping the photoresist 2 on the substrate 1 and obtaining the substrate 1 attached with residual photoresist;
step S2: and (3) putting the substrate 1 attached with the residual photoresist into a chamber, adjusting the ambient temperature in the chamber to be more than or equal to a preset temperature, continuously introducing inert gas into the chamber, and simultaneously introducing hydrogen-containing gas into the chamber at intervals of a first time to remove the residual photoresist 2 on the substrate 1.
The photoresist removing process provided in this embodiment first performs step S1 to strip the photoresist 2 on the semiconductor substrate 1, and after step S1, as shown in fig. 2 and fig. 3, the photoresist 2 on the substrate 1 is mostly stripped, but the residual photoresist 2 still remains. Among them, in step S1, the chamber may be used to eject high-pressure NMP to the substrate in its inner cavity to strip the photoresist 2.
The predetermined temperature is the minimum temperature required for processing the residual photoresist with the hydrogen-containing gas, and the predetermined temperature may be 290-310 ℃, and the predetermined temperature is preferably 300 ℃ in this embodiment. The environment temperature greater than or equal to the preset temperature in the chamber may enable the plasma reaction to form plasma, and since the hydrogen-containing gas is a reducing gas, the hydrogen-containing gas forming the plasma may be used to remove the residual photoresist 2, when the photoresist removal process of this embodiment is used to remove the residual photoresist 2, step S2 may be performed in the chamber after step S1 until the residual photoresist 2 is removed, where the chamber may be a PECVD apparatus or an ashing apparatus.
Further, step S1 and step S2 may be performed in the chamber, and in this case, to implement step S1 and step S2, the gas introduced into the chamber, the ambient temperature and the reaction time may be adjusted corresponding to step S1 and step S2, respectively. Compared with the prior art, when the steps S1 and S2 are performed in the chamber, the substrate 1 does not need to be transferred between devices, and the residual photoresist 2 does not need to be removed by using oxygen, so that the photoresist removing process can not only effectively improve the removing efficiency, prevent the substrate 1 from being in contact with the outside air to generate an oxidation reaction when the substrate 1 is transferred between the devices, but also prevent the substrate 1 from generating an oxidation reaction when excessive oxygen is in contact with the substrate 1 in the removing process, thereby ensuring the quality of the substrate 1 and improving the yield of products.
In addition, in step S2, hydrogen-containing gas is introduced into the chamber every first time interval, so that the substrate 1 can be prevented from being damaged due to being continuously in a high-temperature high-proportion hydrogen-containing gas environment for a long time on the premise of ensuring removal of the residual photoresist 2, and the product yield can be improved.
It should be noted that, when the hydrogen-containing gas is introduced in step S2, the hydrogen-containing gas can remove the photoresist 2, and when the hydrogen-containing gas is not introduced, the inert gas continuously introduced can timely discharge the removed photoresist 2 product to the outside of the chamber, so that the photoresist 2 on the substrate 1 can be effectively removed.
Compared with the prior art, the photoresist removing process provided by the embodiment utilizes the hydrogen-containing gas to remove the residual photoresist 2 on the substrate 1 in the chamber with the ambient temperature greater than or equal to the preset temperature, and the hydrogen-containing gas is introduced every first time, so that the substrate 1 can be prevented from being damaged due to the fact that the substrate is continuously in the high-temperature high-proportion hydrogen-containing gas environment for a long time on the premise of ensuring that the residual photoresist 2 is removed, and further the product yield can be improved.
In this embodiment, the inert gas can serve as a dilution and carrier gas, so that the hydrogen-containing gas can be more uniformly distributed in the chamber, thereby facilitating the hydrogen-containing gas to fully perform the plasma reaction. The inert gas may facilitate the hydrogen-containing gas in step S2 to remove the residual photoresist 2, thereby improving the removal efficiency of the photoresist 2.
Wherein, the inert gas can be nitrogen, and the hydrogen-containing gas can be ammonia.
In step S2, the cumulative time of the multiple passes of the hydrogen-containing gas into the chamber is equal to half of the total time of the continuous passes of the inert gas.
When the cumulative time of the hydrogen-containing gas is half of the total time of continuously introducing the inert gas, the cumulative time of the hydrogen-containing gas is in a better range, and the introducing time of the hydrogen-containing gas not only can ensure the treatment effect of the photoresist 2, but also can prevent the substrate 1 from being damaged due to long-time use of high-proportion hydrogen-containing gas at high temperature.
Further, in step S2, the hydrogen-containing gas is introduced into the chamber for a second time period, where the second time period is equal to the first time period.
The hydrogen-containing gas is pulsed into the chamber in step S2 for a second time period equal to the first time period. Compared with the continuous introduction of the hydrogen-containing gas, the pulse introduction of the hydrogen-containing gas enables the proportion of the hydrogen to be maintained in a proper range, so that the substrate 1 in the chamber is prevented from being damaged due to the overhigh proportion of the hydrogen-containing gas in the high-temperature environment.
It should be noted that, in step S2, the flow rate of the hydrogen-containing gas is maintained at a higher flow rate, such as 30SCCM, to achieve the removal process of the photoresist 2. At this time, the ambient temperature in the chamber in step S2 is high, and the proportion of the hydrogen-containing gas is high, so that although the high temperature and the high proportion of the hydrogen-containing gas can effectively improve the removal effect of the photoresist 2, the substrate 1 is easily damaged. The time for removing the photoresist 2 by the hydrogen-containing gas is controllable by the pulse type hydrogen-containing gas introduction mode in the embodiment, so that the photoresist 2 can be prevented from being treated by the high-temperature high-proportion hydrogen-containing gas for a long time, and the substrate 1 can be prevented from being damaged while the removal effect of the photoresist 2 is improved.
Further, the first time period and the second time period are both 8-12 s.
When the first time period and the second time period are both 8-12S, not only the residual photoresist 2 can be completely removed in step S2, but also the substrate 1 can be effectively prevented from being damaged, so that the first time period and the second time period are both preferably 8-12S in this embodiment.
In step S2, after the hydrogen-containing gas is introduced into the chamber for the second time period, the hydrogen-containing gas is introduced into the chamber at intervals of the first time period.
Specifically, when the step S2 is started, the hydrogen-containing gas is firstly introduced for 8 to 12 seconds, and then the hydrogen-containing gas is introduced again every 8 to 12 seconds.
When the hydrogen-containing gas is introduced for the second time period firstly and then the hydrogen-containing gas is introduced for the first time period, the residual photoresist 2 is removed for a period of time and then the photoresist 2 product is immediately discharged out of the chamber by using the inert gas, and compared with the removal mode of introducing the inert gas firstly and then introducing the hydrogen-containing gas for the first time period, the waste of the inert gas can be effectively prevented.
In step S2, the amount of the hydrogen-containing gas introduced is sequentially decreased.
Since the hydrogen-containing gas is required in a gradually decreasing amount as the photoresist 2 is gradually removed, the substrate 1 may be damaged at a high temperature by using the hydrogen-containing gas in the same amount as that introduced in the previous step in the latter stage of step S2.
Therefore, in the present embodiment, it is preferable that the introduction amount of the hydrogen-containing gas introduced for multiple times is sequentially decreased, for example, the introduction amount of the hydrogen-containing gas introduced for the first time is 30SCCM, and the introduction amount of the hydrogen-containing gas introduced for the subsequent time is less than 30 SCCM. The introduction amount of the hydrogen-containing gas is gradually decreased, so that the damage condition of the substrate 1 in a high-temperature environment can be reduced while the residual photoresist 2 is completely removed.
Further, in the process of introducing the hydrogen-containing gas twice, the amount of the introduced hydrogen-containing gas in the next time is reduced by 8-12% of the amount of the introduced hydrogen-containing gas in the previous time.
When the decrease amount of the hydrogen-containing gas introduced next time is 8-12% of the previous hydrogen-containing gas introduced last time, the removal effect of the residual photoresist 2 in the step S2 can be optimized, thereby effectively improving the quality of the substrate 1.
Further, in step S2, the total time for continuously introducing the inert gas is 2-5 min.
When the total time of continuously introducing the inert gas is 2-5min, the residual photoresist 2 in the step S2 can be effectively and completely removed, and the substrate 1 can be effectively prevented from being damaged due to being in the high-temperature high-proportion hydrogen-containing gas environment for a long time.
In step S2, the ambient temperature in the chamber is 310-.
Compared with the preset temperature, when the ambient temperature in the chamber is 310-390 ℃, the removal effect and the removal efficiency of the residual photoresist 2 in the step S2 can be optimized, and in combination with the pulsed introduction of the hydrogen-containing gas, even if the photoresist 2 removal process in the step S2 is in a high temperature environment, the substrate 1 is not easily damaged due to the shortened introduction time of the hydrogen-containing gas.
As shown in fig. 4, the present embodiment further provides a semiconductor manufacturing process, which includes the photoresist removing process, and includes the steps after step S2:
step S3: the substrate 1 from which the residual photoresist 2 has been removed is coated in a chamber.
The semiconductor manufacturing process provided by the embodiment includes the photoresist removal process, so that the semiconductor manufacturing process provided by the embodiment and the photoresist removal process can solve the same technical problem and achieve the same technical effect. In addition, in the semiconductor manufacturing process provided in this embodiment, the step of plating the film on the substrate 1 may be integrated into the chamber used in step S2 in the first embodiment, so as to further improve the manufacturing efficiency of the semiconductor.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (10)
1. A photoresist removal process, comprising:
s1: stripping the photoresist (2) on the substrate (1) to obtain the substrate (1) attached with residual photoresist;
s2: and putting the substrate (1) attached with the residual photoresist into a chamber, adjusting the ambient temperature in the chamber to be more than or equal to a preset temperature, continuously introducing inert gas into the chamber, and simultaneously introducing hydrogen-containing gas into the chamber at intervals of a first time so as to remove the residual photoresist (2) on the substrate (1).
2. The photoresist removal process of claim 1, wherein in step S2, the cumulative time of the multiple passes of the hydrogen-containing gas into the chamber is equal to half of the total time of the continuous passes of the inert gas.
3. The photoresist removal process of claim 2, wherein in step S2, the duration of each time the hydrogen-containing gas is introduced into the chamber is a second duration, and the second duration is equal to the first duration.
4. The photoresist removal process of claim 3, wherein the first duration and the second duration are each 8-12 s.
5. The photoresist removal process of claim 3, wherein in step S2, after the hydrogen-containing gas is introduced into the chamber for the second duration, the hydrogen-containing gas is introduced into the chamber every other first duration.
6. The photoresist removal process of any one of claims 1 to 5, wherein in step S2, the amount of the hydrogen-containing gas introduced is sequentially decreased.
7. The process of claim 6, wherein during two consecutive passes of the hydrogen-containing gas, the amount of the hydrogen-containing gas introduced next time is reduced by 8-12% of the amount of the hydrogen-containing gas introduced last time.
8. The photoresist removal process of any one of claims 1 to 5, wherein the inert gas is continuously supplied for a total time of 2 to 5min in step S2.
9. The photoresist removing process according to any one of claims 1 to 5, wherein the ambient temperature in the chamber is 310-390 ℃ in step S2.
10. A semiconductor manufacturing process comprising the photoresist removal process of any one of claims 1 to 9, and comprising, after step S2:
s3: and coating the substrate (1) with the residual photoresist (2) removed in the chamber.
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