CN114725075A - 一种功率模块端子及功率模块 - Google Patents

一种功率模块端子及功率模块 Download PDF

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CN114725075A
CN114725075A CN202210266397.3A CN202210266397A CN114725075A CN 114725075 A CN114725075 A CN 114725075A CN 202210266397 A CN202210266397 A CN 202210266397A CN 114725075 A CN114725075 A CN 114725075A
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terminal
power module
copper layer
main body
lead
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陈材
吕坚玮
任林浩
康勇
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Huazhong University of Science and Technology
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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
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    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
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    • H01L23/00—Details of semiconductor or other solid state devices
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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
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    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
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    • H—ELECTRICITY
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    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
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    • H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
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    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/40137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H01L2224/40139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous strap daisy chain
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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Abstract

本发明公开了一种功率模块端子及功率模块，属于电力电子功率模块领域，功率模块端子包括：主体部和主体部向外延伸出的引出部，所述主体部上设有两个电流引入孔，所述引出部上设有电流引出孔，在所述电流引出孔与主体部的外边沿之间开设有凹槽。功率模块包括：基板、设置在基板上的上桥功率芯片组和下桥功率芯片组、正极铜层及负极铜层，还包括：正极端子和负极端子，所述正极端子和负极端子为上述所述的功率模块端子，所述正极端子和负极端子分别通过各自的两个电流引入孔电连接到正极铜层和负极铜层。本发明解决了大面积端子存在焊接过程中形变大，焊接后焊点焊料残余应力大的问题。

Description

一种功率模块端子及功率模块
技术领域
本发明属于电力电子功率模块领域，更具体地，涉及一种功率模块端子及功率模块。
背景技术
功率半导体是电力电子器件中的一种，随着功率半导体技术的不断发展，功率模块技术也得到了实质性的提升和迅速发展。为了提升功率模块的效率，需要功率模块更高的开关频率，而传统的功率模块布局结构具有较高的寄生电感，功率芯片在开关过程中承受较高的过压，增加了功率器件过压击穿的风险，所以功率模块要想办法降低寄生电感，来维持稳定工作。
现有技术中，通过增加功率端子的面积来降低端子寄生电感，但是，大面积端子存在焊接过程中形变大，焊接后焊点焊料残余应力大，温度循环过程中端子形变、焊料所受应力大的问题，影响加工及工作的可靠性。
发明内容
针对现有技术的缺陷和改进需求，本发明提供了一种功率模块端子及功率模块，其目的在于降低温度循环过程中端子在电流引入点处的形变和应力。
为实现上述目的，按照本发明的一个方面，提供了一种功率模块端子，包括：主体部和主体部向外延伸出的引出部，所述主体部上设有两个电流引入孔，所述引出部上设有电流引出孔，在所述电流引出孔与主体部的外边沿之间开设有凹槽。
进一步地，所述凹槽两侧的端子面积相等。
进一步地，所述凹槽为阶梯状，所述电流引出孔作为阶梯的起始点。
进一步地，所述主体部和引出部的材料为铜，铜镀银或铜钼合金。
按照本发明的另一个方面，提供了一种功率模块，包括基板、设置在基板上的上桥功率芯片组和下桥功率芯片组、正极铜层及负极铜层，所述上桥功率芯片组和下桥功率芯片组分别与所述正极铜层和负极铜层电连接，其特征在于，还包括：正极端子和负极端子，所述正极端子和负极端子均为第一方面任意一项所述的功率模块端子，所述正极端子和负极端子分别通过各自的两个电流引入孔电连接到所述正极铜层和负极铜层。
进一步地，所述正极端子层叠于所述负极端子上方。
进一步地，所述正极端子和负极端子的材料为铜，铜镀银或铜钼合金。
总体而言，通过本发明所构思的以上技术方案，能够取得以下有益效果：
(1)本发明的功率模块端子及功率模块，通过在端子的引出部与主体部的外边沿之间开设凹槽，使大面积端子在高温循环下能够释放形变应力，减小了端子对电流引入点处的应力，通过仿真实验证明，本发明的端子设置在功率模块上，降低了高温下功率模块焊接点处的形变及焊接后焊料的残余应力。
(2)作为优选，凹槽两侧的端子面积相等，能够使两部分端子分得的电流均衡。
(3)作为优选，凹槽为阶梯状，易于实现凹槽两侧的端子面积相等，使两部分端子分得的电流均衡。
(4)作为优选，端子的材料为铜，铜镀银或铜钼合金，能够进一步降低寄生电感。
总而言之，本发明解决了大面积端子存在焊接过程中形变大，焊接后焊点焊料残余应力大的问题。
附图说明
图1为本发明提供的功率模块端子结构示意图。
图2为不包含正负极端子的功率模块结构示意图。
图3为本发明的功率模块端子用作正负极端子时的结构示意图。
图4为本发明提供的功率模块结构示意图。
图5为现有技术中的正极端子焊接点焊料应力分布图。
图6为现有技术中的正极端子焊点处的形变示意图。
图7为本发明中的正极端子焊接点焊料应力分布图。
图8为本发明中的正极端子焊点处的形变示意图。
在所有附图中，相同的附图标记用来表示相同的元件或者结构，其中：
20-主体部，21-引出部，22、25为电流引入孔，23-电流引出孔，24-凹槽，1-基板，2-正极铜层，3-上桥芯片连接件，4-上桥功率芯片组，5-芯片驱动键合线，6-上桥臂芯片驱动电路铜层，7-正极端子焊点，8-负极铜层，9-下桥功率芯片组，10-下桥芯片连接件，11-下桥臂芯片驱动电路铜层，12-负极端子焊接点，13-交流侧铜层，14-交流侧电极端子，15-正极端子，16-负极端子。
具体实施方式
为了使本发明的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本发明进行进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。此外，下面所描述的本发明各个实施方式中所涉及到的技术特征只要彼此之间未构成冲突就可以相互组合。
如图1所示，本发明提供的一种功率模块端子，主要包括：包括主体部20和主体部向外延伸出的引出部21，主体部20上有两个电流引入孔22、25，用于通过功率模块的焊接点引入电流，引出部21上有电流引出孔23，在电流引出孔23与主体部的外边沿之间开设有凹槽24，该凹槽贯穿主体部和引出部的上下表面，将端子分为两部分。
通过在大面积的端子上开槽，保证较低寄生电感的同时，能够降低大面积端子对焊点引入大的拉扯应力，降低了高温下的形变及焊接后焊料的残余应力，且降低温度循环过程中焊料上的应力。
作为优选，凹槽24两侧的端子面积相等，即被凹槽分成的两部分的端子面积相等，使得两部分的端子分得的电流能够均衡。
作为优选，凹槽24为阶梯状，从电流引出孔23作为起始点，以阶梯状弯折至主体部的外边沿处，便于使两部分的端子分得的电流均衡。
作为优选，主体部20和引出部21的材料为铜，铜镀银、铜钼合金等，进一步降低寄生电感。
如图2、图3所示，本发明提供了一种功率模块，包括：基板1，基板1上设置有上桥功率芯片组4和下桥功率芯片组9；上桥功率芯片组4中每个芯片的漏极与正极铜层2连接，每个芯片的源极通过上桥芯片连接件3与交流侧铜层13连接；下桥功率芯片组9中每个芯片的漏极与交流侧铜层13连接，每个芯片的源极通过下桥芯片连接件10连接到负极铜层8；交流侧电极端子14从模块交流侧铜层13引出。芯片驱动键合线5将上桥功率芯片组4和下桥功率芯片组9中的芯片的栅极与源极分别连接到对应的驱动电路铜层上，用于驱动芯片。即上桥功率芯片组4通过芯片驱动键合线5与上桥臂芯片驱动电路铜层6连接，下桥功率芯片组9通过芯片驱动键合线5与下桥臂芯片驱动电路铜层11；正极端子15通过正极端子焊点7与正极铜层2电连接，负极端子16通过负极端子焊接点12与负极铜层8电连接，其中，该正极端子15和负极端子16为上述本发明提供的功率模块端子。
具体的，正极端子15通过两个电流引入孔22、25经过正极端子焊点7电连接到正极铜层2；负极端子16通过两个电流引入孔22、25经过负极端子焊接点12电连接到负极铜层8。
进一步地，如图4所示，正极端子15在负极端子16上方，采用层叠式结构，可以进一步减少端子引入的寄生电感。
本发明针对正负极端子没有开槽的现有技术以本发明的结构进行仿真，仿真实验均在25℃-250℃的温度环境进行循环，测量正极端子处相应的形变及应力。本发明中的端子上开设阶梯状的槽，并且，正负极端子采用层叠结构，仿真结果如图5-图8所示。
如图5所示，为现有技术中的正极端子没有开槽时，在25℃-250℃的温度循环过程中，焊接点焊料的应力分布图，通过仿真实验，可以看出，在正极端子焊点焊料处的最大应力为61.645MPa。
如图6所示，为图5对应的焊点形变示意图，通过仿真实验，可以看出，端子焊点形变在竖直方向的分量为0.022mm。
如图7所示，为本发明的正极端子在25℃-250℃的温度循环过程中，焊接点焊料的应力分布图，通过仿真实验，可以看出，在正极端子焊点焊料处的最大应力为39.28MPa。
如图8所示，为图7对应的焊点形变示意图，通过仿真实验，可以看出，端子焊点形变在竖直方向的分量为0.0034mm。
通过上述仿真实验可以看出，本发明的端子结构能够降低高温下的形变及焊接后焊料的残余应力，且降低温度循环过程中焊料上的应力。同时，通过调整实验参数进一步发现，本发明的结构最大应力可降低50％以上。
本领域的技术人员容易理解，以上所述仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。

Claims (7)

1.一种功率模块端子，其特征在于，包括：主体部(20)和主体部向外延伸出的引出部(21)，所述主体部(20)上设有两个电流引入孔(22、25)，所述引出部(21)上设有电流引出孔(23)，在所述电流引出孔(23)与主体部的外边沿之间开设有凹槽(24)。
2.根据权利要求1所述的功率模块端子，其特征在于，所述凹槽(24)两侧的端子面积相等。
3.根据权利要求2所述的功率模块端子，其特征在于，所述凹槽(24)为阶梯状，所述电流引出孔(23)作为阶梯的起始点。
4.根据权利要求2所述的功率模块端子，其特征在于，所述主体部(20)和引出部(21)的材料为铜，铜镀银或铜钼合金。
5.一种功率模块，包括基板(1)、设置在基板(1)上的上桥功率芯片组(4)和下桥功率芯片组(9)、正极铜层(2)及负极铜层(8)，所述上桥功率芯片组(4)和下桥功率芯片组(9)分别与所述正极铜层(2)和负极铜层(8)电连接，其特征在于，还包括：正极端子(15)和负极端子(16)，所述正极端子(15)和负极端子(16)均为权利要求1-4任意一项所述的功率模块端子，所述正极端子(15)和负极端子(16)分别通过各自的两个电流引入孔(22、25)电连接到所述正极铜层(2)和负极铜层(8)。
6.根据权利要求5所述的功率模块，其特征在于，所述正极端子(15)层叠于所述负极端子(16)上方。
7.根据权利要求5所述的功率模块，其特征在于，所述正极端子(15)和负极端子(16)的材料为铜，铜镀银或铜钼合金。
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116130467A (zh) * 2023-02-16 2023-05-16 华中科技大学 一种对称布局的半桥功率模块
CN116130467B (zh) * 2023-02-16 2023-11-10 华中科技大学 一种对称布局的半桥功率模块

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