CN114714769A - Anti-corrosion ink box, ink-jet printing device and preparation method of QLED light-emitting device - Google Patents

Anti-corrosion ink box, ink-jet printing device and preparation method of QLED light-emitting device Download PDF

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CN114714769A
CN114714769A CN202210324862.4A CN202210324862A CN114714769A CN 114714769 A CN114714769 A CN 114714769A CN 202210324862 A CN202210324862 A CN 202210324862A CN 114714769 A CN114714769 A CN 114714769A
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ink
layer
sio
corrosion
inner plastic
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周浪
王立成
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HUST Wuxi Research Institute
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HUST Wuxi Research Institute
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01Ink jet
    • B41J2/17Ink jet characterised by ink handling
    • B41J2/175Ink supply systems ; Circuit parts therefor
    • B41J2/17503Ink cartridges
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01Ink jet
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01Ink jet
    • B41J2/17Ink jet characterised by ink handling
    • B41J2/175Ink supply systems ; Circuit parts therefor
    • B41J2/17503Ink cartridges
    • B41J2/17513Inner structure
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01Ink jet
    • B41J2/17Ink jet characterised by ink handling
    • B41J2/175Ink supply systems ; Circuit parts therefor
    • B41J2/17503Ink cartridges
    • B41J2/17553Outer structure
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41MPRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
    • B41M1/00Inking and printing with a printer's forme
    • B41M1/26Printing on other surfaces than ordinary paper
    • B41M1/34Printing on other surfaces than ordinary paper on glass or ceramic surfaces
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41MPRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
    • B41M3/00Printing processes to produce particular kinds of printed work, e.g. patterns
    • B41M3/003Printing processes to produce particular kinds of printed work, e.g. patterns on optical devices, e.g. lens elements; for the production of optical devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41MPRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
    • B41M5/00Duplicating or marking methods; Sheet materials for use therein
    • B41M5/0041Digital printing on surfaces other than ordinary paper
    • B41M5/0047Digital printing on surfaces other than ordinary paper by ink-jet printing
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41MPRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
    • B41M5/00Duplicating or marking methods; Sheet materials for use therein
    • B41M5/0041Digital printing on surfaces other than ordinary paper
    • B41M5/007Digital printing on surfaces other than ordinary paper on glass, ceramic, tiles, concrete, stones, etc.
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The invention relates to an anti-corrosion ink box, an ink-jet printing device and a preparation method of a QLED light-emitting device. The anti-corrosion ink box comprises an outer hard protective layer and an inner plastic ink storage layer, wherein a mixed film layer is arranged on the inner surface of the inner plastic ink storage layer, and Na is adopted as the mixed film layer2SiO3、CaSiO3And SiO2Is prepared from the mixture of (A) and (B). The inner surface of the inner plastic ink storage layer is subjected to anti-corrosion treatment, and a layer of sodium silicate (Na) is evaporated on the inner surface of the inner plastic ink storage layer2SiO3) Calcium silicate (CaSiO)3) Silicon dioxide (SiO)2) The mixed film layer can improve the corrosion resistance of the inner surface of the inner plastic ink storage layer, and a great amount of previous ink cannot be left in the inner plastic ink storage layer when the ink needs to be replaced. The QLED luminescent device prepared by the ink-jet printing device has greatly improved performances such as stability and the like.

Description

Anti-corrosion ink box, ink-jet printing device and preparation method of QLED light-emitting device
Technical Field
The invention relates to an anti-corrosion ink box, an ink-jet printing device and a preparation method of a QLED light-emitting device.
Background
Display technology has completed a qualitative leap from the early Cathode Ray Tube (CRT) to the Liquid Crystal Display (LCD) and Plasma Display Panel (PDP) in the middle of the 80 th century to the current mainstream OLED/QLED display.
Organic Light Emitting Diodes (OLEDs) have become a mainstream technology in the display technology field due to their excellent display properties, such as self-luminescence, simple structure, ultra-thinness, high response speed, wide viewing angle, low power consumption, flexible display, etc. The quantum dot light emitting diode (QLED) has the advantages of saturated emergent light color and adjustable wavelength, and has high photoluminescence and electroluminescence quantum yield, and has been a strong competition for OLEDs in recent years.
At present, in the OLED/QLED display technology, manufacturers all adopt a mature vacuum evaporation technology to prepare each functional layer, but the utilization rate of materials is too low by using the vacuum evaporation technology, and when a large-size display panel is prepared, a large-size high-precision metal mask needs to be used, and the large-size high-precision metal mask is easy to droop or deform, so that the product yield is always low, and the cost is high.
With the development of nano-material technology and device technology, in the OLED/QLED display technology, it is the most favored technology to implement low-cost, large-area printing preparation on a rigid/flexible substrate by using inkjet printing. In the existing OLED/QLED device, functional layer materials are organic polymers, inorganic nanoparticles and the like, the coverage range of solvents for dissolving or dispersing the functional layer materials is wide, and printing ink cartridges storing ink, which are commonly used in the field, are easily dissolved by a certain solvent or a mixed solvent to corrode and pollute the ink. During the device fabrication process, it was often found that the performance of the resulting QLED light emitting device was much reduced when the ink was stored in the ink cartridge for more than 1 week than when the ink was just added to the ink cartridge. When the ink is added into the ink box for more than one week, the performance of the manufactured QLED light-emitting device is reduced due to the corrosion of the ink box, the QLED light-emitting device cannot be cleaned completely when the ink is replaced, and the problem of residue is caused, and the ink is replaced once every week, so that the waste of the ink is caused.
Disclosure of Invention
The invention aims to overcome the defects in the prior art and provide an anti-corrosion ink box, an ink-jet printing device and a preparation method of a QLED light-emitting device. The inner surface of the inner plastic ink storage layer is subjected to anti-corrosion treatment, and a layer of sodium silicate (Na) is evaporated on the inner surface of the inner plastic ink storage layer2SiO3) Calcium silicate (CaSiO)3) Silicon dioxide (SiO)2) The mixed film layer can improve the corrosion resistance of the inner surface of the inner plastic ink storage layer, and a great amount of previous ink cannot be left in the inner plastic ink storage layer when the ink needs to be replaced. The QLED luminescent device prepared by the ink-jet printing device has greatly improved performances such as stability and the like.
In order to achieve the technical purpose, the embodiment of the invention adopts the following technical scheme:
in a first aspect, an embodiment of the invention provides an anti-corrosion ink cartridge, which comprises an outer hard protective layer and an inner plastic ink storage layer, wherein a mixed film layer is arranged on the inner surface of the inner plastic ink storage layer, and the mixed film layer adopts Na2SiO3、CaSiO3And SiO2Is prepared from the mixture of (A) and (B).
Further, the mixed film layer is formed on the inner surface of the inner plastic ink storage layer by adopting a vacuum evaporation process, and the thickness of the mixed film layer is 0.2-2 μm.
Further, Na in the mixed film layer2SiO3、CaSiO3And SiO2The mass ratio of (A) to (B) is 1:1:1-1:1: 10.
Further, Na in the mixed film layer2SiO3、CaSiO3And SiO2The mass ratio of (A) to (B) is 1:1: 4.
Furthermore, the outer hard protection layer is made of plastics, the inner plastic ink storage layer is used for storing ink and is made of polystyrene, polyethylene terephthalate or polymethyl methacrylate.
In a second aspect, an embodiment of the present invention provides an inkjet printing apparatus, including a nozzle and an ink cartridge, where an outer hard protection layer of the ink cartridge is communicated with the nozzle by way of clamping, and an inner plastic ink storage layer is communicated with a nozzle of the nozzle and supplies ink to the nozzle.
In a third aspect, an embodiment of the present invention provides a method for manufacturing a QLED light emitting device, where the inkjet printing apparatus is adopted, and the method includes the following steps:
(1) preparing an ITO anode on a glass substrate, preparing a hole injection layer on the ITO anode, carrying out ink-jet printing on a water-soluble conductive polymer PEDOT on the ITO anode, drying to form a film, and carrying out annealing treatment at the temperature of 140-160 ℃ for 10-30min to obtain the hole injection layer with the thickness of 40-50 nm;
(2) preparing a hole transport layer on the hole injection layer, printing TFB (9, 9-dioctylfluorene-CO-N- (4-butylphenyl) diphenylamine) ink on the hole injection layer through ink jet, and carrying out annealing treatment at the temperature of 220-240 ℃ for 20-40min after vacuum drying and film forming to obtain the hole transport layer with the thickness of 20-30 nm;
(3) preparing a QD (luminescent quantum dot) luminescent layer on the hole transport layer, carrying out ink-jet printing on green CdSe @ ZnS alloy quantum dot ink on the hole transport layer, carrying out vacuum drying to form a film, and carrying out annealing treatment at 90-110 ℃ for 5-20min to obtain the QD luminescent layer with the thickness of 10-30 nm;
(4) preparing an electron transport layer on the QD light-emitting layer, printing ZnO ink on the QD light-emitting layer through ink-jet, and carrying out annealing treatment at the temperature of 110-130 ℃ for 10-20min after vacuum drying film forming to obtain the electron transport layer with the thickness of 30-50 nm;
(5) preparing a cathode on the electron transport layer, and evaporating Al on the electron transport layer to obtain a cathode with the thickness of 140-160 nm;
(6) and packaging and preparing to obtain the QLED light-emitting device.
The technical scheme provided by the embodiment of the invention has the following beneficial effects:
the invention carries out anti-corrosion treatment on the inner surface of the inner plastic ink storage layer, and the inner surface of the inner plastic ink storage layerEvaporating a layer of sodium silicate (Na)2SiO3) Calcium silicate (CaSiO)3) Silicon dioxide (SiO)2) The mixed film layer of (1), wherein sodium silicate (Na)2SiO3) Calcium silicate (CaSiO)3) Silicon dioxide (SiO)2) The glass is a main substance of the glass, namely a thin layer of glass is arranged on the inner surface of the inner plastic ink storage layer, the corrosion resistance of the glass is better than that of the plastic, most of organic solvents can be prevented from being corroded, the glass is easy to clean, and a large amount of previous ink cannot be left in the inner plastic ink storage layer when the ink needs to be replaced. The QLED luminescent device prepared by the ink-jet printing device has greatly improved performances such as stability and the like.
Drawings
Fig. 1 is a schematic structural diagram of a QLED light-emitting device manufactured according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Example 1
The ink-jet printing device comprises an ink box and a nozzle, wherein the ink box comprises an outer hard protective layer and an inner plastic ink storage layer, a mixed film layer is arranged on the inner surface of the inner plastic ink storage layer, and Na is adopted as the mixed film layer2SiO3、CaSiO3And SiO2Is prepared from a mixture of Na2SiO3、CaSiO3And SiO2The mass ratio of (A) to (B) is 1:1: 4. The mixed film layer is formed on the inner surface of the inner plastic ink storage layer by adopting a vacuum evaporation process, and the thickness of the mixed film layer is 1 mu m.
The outer hard protective layer is made of plastic, and the inner plastic ink storage layer is used for storing ink and is made of polystyrene, polyethylene terephthalate or polymethyl methacrylate. It should be noted that the "hard" in the outer hard protective layer is relative to the inner plastic ink storage layer.
The outer hard protection layer of the ink box is communicated with the spray head in a clamping mode, and the inner plastic ink storage layer is communicated with the nozzle of the spray head and supplies ink for the spray head.
A preparation method of a QLED light-emitting device is prepared by adopting the ink-jet printing device and comprises the following steps:
(1) preparing an ITO anode on a glass substrate, preparing a hole injection layer on the ITO anode, printing a water-soluble conductive polymer PEDOT on the ITO anode through ink jet, drying to form a film, and then annealing at 150 ℃ for 20min to obtain the hole injection layer with the thickness of 45 nm; wherein the conductive polymer PEDOT is a polymer of EDOT (3, 4-ethylenedioxythiophene monomer).
(2) Preparing a hole transport layer on the hole injection layer, printing TFB ink on the hole injection layer through ink jet, drying in vacuum to form a film, and annealing at 230 ℃ for 30min to obtain the hole transport layer with the thickness of 25 nm;
(3) preparing a QD light-emitting layer on the hole transport layer, printing CdSe @ ZnS green quantum dot ink on the hole transport layer through ink jet, drying in vacuum to form a film, and annealing at 100 ℃ for 10min to obtain a QD light-emitting layer with the thickness of 20 nm;
(4) preparing an electron transport layer on the QD luminescent layer, printing ZnO ink on the QD luminescent layer through ink jet, drying in vacuum to form a film, and annealing at 120 ℃ for 15min to obtain the electron transport layer with the thickness of 40 nm;
(5) preparing a cathode on the electron transport layer, and evaporating Al on the electron transport layer through an evaporation process to obtain a cathode with the thickness of 150 nm;
(6) and (4) packaging to prepare the QLED light-emitting device, as shown in figure 1.
By adopting the preparation method of the QLED light-emitting device, the QLED light-emitting device is prepared by utilizing the ink boxes storing ink for different time, the prepared QLED light-emitting device is compared with the relevant performance, and the performance of the device prepared by the printing ink box subjected to anti-corrosion treatment is shown in the following table 1.
Table 1 comparison of relevant properties of different types of light emitting devices in example 1 of the present invention
Figure BDA0003572980180000031
Figure BDA0003572980180000041
Comparative example 1
An ink jet printing apparatus was distinguished from the printing apparatus of example 1 in that the inner surface of the inner plastic ink storage layer of the ink cartridge of comparative example 1 was not provided with a mixed film layer.
By using the method for manufacturing the QLED light emitting device in example 1, different QLED light emitting devices were manufactured using a conventional inkjet printing apparatus, the difference between the QLED light emitting devices and the ink cartridges storing ink for different periods of time was made, and the correlation properties of the manufactured QLED light emitting devices were compared, and the properties of the manufactured devices are shown in table 2 below.
Table 2 comparison of relevant properties of different types of light emitting devices in comparative example 1 of the present invention
Figure BDA0003572980180000042
In summary, in the embodiment of the present application, the inner surface of the inner plastic ink storage layer for storing ink is subjected to anti-corrosion treatment, and a layer of sodium silicate (Na) is evaporated on the inner surface of the inner plastic ink storage layer2SiO3) Calcium silicate (CaSiO)3) Silicon dioxide (SiO)2) The mixed film layer of (1), wherein sodium silicate (Na)2SiO3) Calcium silicate (CaSiO)3) Silicon dioxide (SiO)2) The glass is a main substance of glass, which is equivalent to arranging a thin layer of glass on the inner surface of a soft plastic bag, the corrosion resistance of the glass is much better than that of the plastic, most organic solvents can be prevented from being corroded, the glass is easy to clean, and when ink needs to be replaced, a lot of previous ink cannot be left in the plastic bag. It can also be seen from the relevant properties of the QLED light emitting devices prepared in the examples that the inks were relatively stable and did not work well after being added to the ink cartridgesThe performance of the ink added into the ink box 2week is relatively stable (drop is approximately equal to 7%) due to the corrosion of the ink box, and the related performance of the QLED luminescent device prepared in the comparative example is relatively much reduced (drop is approximately equal to 60% after 2 week).
Finally, it should be noted that the above embodiments are only for illustrating the technical solutions of the present invention and not for limiting, and although the present invention is described in detail with reference to examples, it should be understood by those skilled in the art that modifications or equivalent substitutions may be made to the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention, which should be covered by the claims of the present invention.

Claims (7)

1. The anti-corrosion ink box is characterized by comprising an outer hard protective layer and an inner plastic ink storage layer, wherein a mixed film layer is arranged on the inner surface of the inner plastic ink storage layer, and Na is adopted as the mixed film layer2SiO3、CaSiO3And SiO2Is prepared from the mixture of (A) and (B).
2. The anti-corrosion ink cartridge as claimed in claim 1, wherein the mixed film layer is formed on the inner surface of the inner plastic ink storage layer by a vacuum evaporation process to have a thickness of 0.2-2 μm.
3. The corrosion-resistant ink cartridge of claim 1, wherein Na in the mixed film layer2SiO3、CaSiO3And SiO2The mass ratio of (A) to (B) is 1:1:1-1:1: 10.
4. The corrosion-resistant ink cartridge of claim 1, wherein Na in the mixed film layer2SiO3、CaSiO3And SiO2The mass ratio of (A) to (B) is 1:1: 4.
5. The anti-corrosion ink cartridge according to claim 1, wherein the outer hard protective layer is made of plastic, and the inner plastic ink storage layer is used for storing ink and is made of polystyrene, polyethylene terephthalate or polymethyl methacrylate.
6. An ink jet printing apparatus comprising a head and the ink cartridge according to any one of claims 1 to 5, wherein the outer hard protective layer of the ink cartridge is in communication with the head by means of a snap fit, and the inner plastic ink storage layer is in communication with and supplies ink to the nozzles of the head.
7. A method for manufacturing a QLED light-emitting device, characterized by using the inkjet printing apparatus of claim 6, comprising the steps of:
(1) preparing an ITO anode on a glass substrate, preparing a hole injection layer on the ITO anode, carrying out ink-jet printing on a water-soluble conductive polymer PEDOT on the ITO anode, drying to form a film, and carrying out annealing treatment at the temperature of 140-160 ℃ for 10-30min to obtain the hole injection layer with the thickness of 40-50 nm;
(2) preparing a hole transport layer on the hole injection layer, printing TFB ink on the hole injection layer through ink jet, and carrying out annealing treatment at the temperature of 220-240 ℃ for 20-40min after vacuum drying and film forming to obtain the hole transport layer with the thickness of 20-30 nm;
(3) preparing a QD light-emitting layer on the hole transport layer, carrying out ink-jet printing on green CdSe @ ZnS alloy quantum dot ink on the hole transport layer, carrying out vacuum drying to form a film, and carrying out annealing treatment at 90-110 ℃ for 5-20min to obtain the QD light-emitting layer with the thickness of 10-30 nm;
(4) preparing an electron transport layer on the QD light-emitting layer, printing ZnO ink on the QD light-emitting layer through ink-jet, and carrying out annealing treatment at the temperature of 110-130 ℃ for 10-20min after vacuum drying film forming to obtain the electron transport layer with the thickness of 30-50 nm;
(5) preparing a cathode on the electron transport layer, and evaporating Al on the electron transport layer to obtain a cathode with the thickness of 140-160 nm;
(6) and packaging and preparing to obtain the QLED light-emitting device.
CN202210324862.4A 2022-03-30 2022-03-30 Anti-corrosion ink box, ink-jet printing device and preparation method of QLED light-emitting device Pending CN114714769A (en)

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CN101544123A (en) * 2008-03-24 2009-09-30 理想科学工业株式会社 Folded ink bag and ink box
CN203093325U (en) * 2013-01-02 2013-07-31 珠海天威飞马打印耗材有限公司 Ink box
CN103448370A (en) * 2013-01-02 2013-12-18 珠海天威飞马打印耗材有限公司 Ink box
CN112778176A (en) * 2020-12-31 2021-05-11 广东聚华印刷显示技术有限公司 Quantum dot ligand, quantum dot, electroluminescent device, preparation method of electroluminescent device and display device

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5185614A (en) * 1991-04-17 1993-02-09 Hewlett-Packard Company Priming apparatus and process for multi-color ink-jet pens
CN1262999A (en) * 1999-01-28 2000-08-16 惠普公司 High-durability ink storage container for ink disperser system
CN101544123A (en) * 2008-03-24 2009-09-30 理想科学工业株式会社 Folded ink bag and ink box
JP2009226808A (en) * 2008-03-24 2009-10-08 Riso Kagaku Corp Gadget ink pack and ink cartridge
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