CN114709199A - Relay back-voltage suppression module packaging structure, packaging method and follow current circuit - Google Patents

Relay back-voltage suppression module packaging structure, packaging method and follow current circuit Download PDF

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Publication number
CN114709199A
CN114709199A CN202210632568.XA CN202210632568A CN114709199A CN 114709199 A CN114709199 A CN 114709199A CN 202210632568 A CN202210632568 A CN 202210632568A CN 114709199 A CN114709199 A CN 114709199A
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China
Prior art keywords
module
relay
chip
follow current
pressure suppression
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Granted
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CN202210632568.XA
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Chinese (zh)
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CN114709199B (en
Inventor
张儒光
周康平
唐家安
聂德福
郑汉东
农金燕
潘海生
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Churod Electronics Co ltd
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Churod Electronics Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/074—Stacked arrangements of non-apertured devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H47/00—Circuit arrangements not adapted to a particular application of the relay and designed to obtain desired operating characteristics or to provide energising current
    • H01H47/002—Monitoring or fail-safe circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H47/00—Circuit arrangements not adapted to a particular application of the relay and designed to obtain desired operating characteristics or to provide energising current
    • H01H47/02—Circuit arrangements not adapted to a particular application of the relay and designed to obtain desired operating characteristics or to provide energising current for modifying the operation of the relay
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49575—Assemblies of semiconductor devices on lead frames
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/041—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage using a short-circuiting device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H01L2224/331—Disposition
    • H01L2224/3318—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H01L2224/33181—On opposite sides of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Emergency Protection Circuit Devices (AREA)

Abstract

The invention discloses a relay back-pressure suppression module packaging structure, a relay back-pressure suppression module packaging method and a follow current circuit, and relates to the technical field of electrical equipment control; the connecting assembly comprises two connecting sheets, and the mounting positions of the two connecting sheets are opposite and arranged at intervals; the chip assembly comprises a follow current module, and the follow current module is arranged between the two mounting positions; the follow current module comprises a diode submodule and a Zener diode submodule which are electrically connected with each other; plastic envelope portion plastic envelope coupling assembling and chip subassembly, the one end that installation position was kept away from to two connection pieces extends in order to form two pins from plastic envelope portion, corresponds the both ends of connecting at relay coil. The invention has the dual characteristics of the diode and the Zener tube, and realizes the balance between the relay turn-off characteristic and the protection of the drive circuit.

Description

Relay back-voltage suppression module packaging structure, packaging method and follow current circuit
Technical Field
The invention relates to the technical field of electrical equipment control, in particular to a relay back-pressure suppression module packaging structure, a relay back-pressure suppression module packaging method and a follow current circuit.
Background
When the relay is switched off, because the current of the coil is rapidly reduced, the two sides of the inductive coil can induce 200V-1000V reverse electromotive force which is harmful to electronic components of a relay driving circuit, and therefore a corresponding follow current circuit is required to be configured for overvoltage clamping protection.
At present, most of circuits adopt a freewheeling circuit of a freewheeling diode device, and the characteristic that the voltage of a diode does not exceed 0.7V when the diode is conducted is utilized, so that the circuit has the excellent performance that the reverse voltage of a clamping coil is up to 2V, and stable and reliable back-voltage protection can be provided for a driving circuit. However, the diode freewheeling circuit has a large influence on the turn-off characteristic of the relay because the on-resistance of the diode is very small after the diode is electrified, the energy absorption of the coil is slow, and the relay contact has attraction force for a long time, so that the turn-off time of the relay contact is increased by 5-10 times compared with the time without the freewheeling circuit.
Disclosure of Invention
The invention mainly aims to provide a relay back-pressure suppression module packaging structure, a relay back-pressure suppression module packaging method and a follow current circuit, and aims to solve the problem that the existing follow current circuit has a large influence on the turn-off characteristic of a relay and shorten the turn-off time of the relay.
In order to achieve the above object, the present invention provides a relay back-pressure suppressing module packaging structure, including:
the connecting assembly comprises two connecting pieces, and the mounting positions of the two connecting pieces are opposite and arranged at intervals;
the chip assembly comprises a follow current module, and the follow current module is arranged between the two mounting positions; the follow current module comprises a diode submodule and a Zener diode submodule which are electrically connected with each other;
and the plastic package part is used for plastically packaging the connecting assembly and the chip assembly, and one end of each connecting sheet, which is far away from the mounting position, extends out of the plastic package part to form a pin.
Optionally, the diode sub-module is a diode chip, and the zener sub-module is a zener diode chip.
Optionally, the chip assembly further comprises a first solder tab, a second solder tab, and a third solder tab; the diode chip is connected with the Zener diode chip through the first soldering lug, the diode chip is connected with the installation position of one connecting piece through the second soldering lug, and the Zener diode chip is connected with the installation position of the other connecting piece through the third soldering lug.
Optionally, the diode chip and the zener diode chip are stacked.
Optionally, the diode submodule and the zener submodule are integrated into a back-pressure suppression chip; the chip assembly further comprises two fourth soldering lugs, and two sides of the back-pressure suppression chip are connected with the mounting positions of the connecting pieces through the two fourth soldering lugs respectively.
Optionally, the plastic package part is an epoxy resin piece.
In addition, in order to achieve the above object, the present invention further provides a method for packaging a relay back-pressure suppressing module, which is used for packaging the above-mentioned relay back-pressure suppressing module packaging structure, and the method for packaging the relay back-pressure suppressing module comprises the following steps:
electrically connecting the diode sub-module and the Zener diode sub-module to form a follow current module;
fixing the follow current module between the installation positions of the two connecting sheets;
carrying out plastic package on the fixed chip assembly and the connecting assembly to form the plastic package part; and extending one end of the connecting sheet far away from the mounting position from the plastic package part to form a pin.
Optionally, the diode sub-module is a diode chip, and the zener sub-module is a zener diode chip; the step of electrically connecting the diode sub-modules and the Zener diode sub-modules to each other to form a follow current module comprises:
and the diode chip and the Zener diode chip are connected in a stacking mode through a first welding sheet to form a follow current module.
Optionally, the step of fixing the flywheel module between the mounting positions of the two connecting pieces comprises:
connecting the diode chip with one of the mounting sites through a second soldering lug;
and connecting the Zener diode chip with the other mounting position through a third welding sheet.
In addition, in order to achieve the above object, the present invention further provides a freewheel circuit, including a relay and a relay back-pressure suppressing module packaging structure, where two pins of the relay back-pressure suppressing module packaging structure are correspondingly connected to two ends of a coil of the relay;
the relay back pressure suppression module packaging structure is used for clamping induced electromotive force of a coil of the relay when the coil of the relay is powered down, and is configured as the relay back pressure suppression module packaging structure.
The invention provides a packaging structure of a relay back-pressure suppression module, a packaging method of the relay back-pressure suppression module and a follow current circuit, wherein the packaging structure of the relay back-pressure suppression module comprises a connecting component, a chip component and a plastic package part; the connecting assembly comprises two connecting sheets, and the mounting positions of the two connecting sheets are opposite and arranged at intervals; the chip assembly comprises a follow current module, and the follow current module is arranged between the two mounting positions; the follow current module comprises a diode submodule and a Zener diode submodule which are electrically connected with each other; plastic envelope portion plastic envelope coupling assembling and chip subassembly, the one end that installation position was kept away from to two connection pieces extends in order to form two pins from plastic envelope portion, corresponds the both ends of connecting at relay coil. Therefore, the packaging structure of the relay back-pressure suppression module has the characteristics of the diode and the Zener tube respectively, the Zener tube has larger impedance when being conducted, and can quickly absorb the energy of a relay coil connected with the Zener tube, so that the turn-off time of a relay contact is shorter. And the size of the packaging structure of the relay back-pressure suppression module is not larger than the packaging of a common diode chip, and even if the existing PCB is improved, the position of the original diode chip is replaced, so that the renewal and the improvement of a follow current circuit using a diode device are facilitated.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of an embodiment of a relay back-pressure suppression module packaging structure according to the present invention;
FIG. 2 is a schematic circuit diagram of a freewheeling circuit of the prior art;
fig. 3 is a schematic structural diagram of another embodiment of the relay back pressure suppression module packaging structure according to the present invention;
fig. 4 is a flowchart illustrating an embodiment of a method for packaging a relay back-pressure suppression module according to the present invention.
The implementation, functional features and advantages of the objects of the present invention will be further explained with reference to the accompanying drawings.
The reference numbers illustrate:
reference numerals Name (R) Reference numerals Name (R)
100 Connecting sheet 203 First soldering lug
200 Chip assembly 204 Second bonding pad
300 Plastic package part 205 Third bonding pad
201 Diode chip 206 Back pressure suppression chip
202 Zener diode chip 207 Fourth bonding pad
The implementation, functional features and advantages of the objects of the present invention will be further explained with reference to the accompanying drawings.
Detailed Description
It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that all the directional indicators (such as up, down, left, right, front, and rear … …) in the embodiment of the present invention are only used to explain the relative position relationship between the components, the movement situation, etc. in a specific posture (as shown in the drawing), and if the specific posture is changed, the directional indicator is changed accordingly.
In addition, the descriptions related to "first", "second", etc. in the present invention are for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In addition, technical solutions between various embodiments may be combined with each other, but must be realized by a person skilled in the art, and when the technical solutions are contradictory or cannot be realized, such a combination should not be considered to exist, and is not within the protection scope of the present invention.
Referring to fig. 1, in an embodiment, the package structure of the relay back-pressure suppression module includes:
the connecting assembly comprises two connecting pieces 100, and the mounting positions of the two connecting pieces 100 are opposite and arranged at intervals;
a chip assembly comprising a freewheeling module 200, the freewheeling module 200 being disposed between the two mounting sites; the follow current module 200 comprises a diode submodule and a Zener diode submodule which are electrically connected with each other;
the plastic package part 300 is used for plastic packaging the connecting assembly and the chip assembly by the plastic package part 300, and one end of each connecting sheet 100, which is far away from the mounting position, extends out of the plastic package part 300 to form a pin.
The freewheel module 200 includes a diode submodule and a zener submodule electrically connected to each other, that is, the freewheel module 200 has both the ordinary diode characteristic and the zener diode characteristic of the surface potential epitaxial structure of metal and semiconductor. The follow current module 200 is arranged at two ends of the relay coil, and therefore, the follow current module has a positive electrode contact and a negative electrode contact correspondingly connected with the two ends of the relay coil, one end of each connecting piece 100 is an installation position corresponding to one side of the follow current module 200, and the installation positions are respectively used for connecting and fixing the positive electrode contact and the negative electrode contact of the follow current module 200 through soldering tin; 100 extend out of the plastic package part 300 to form corresponding pins, and the two pins can be located at two sides of the plastic package part 300 respectively as shown in fig. 1; the lead frame can also be arranged on the same side of the plastic package part 300, and the pins are used for being connected with other devices through leads on the printed circuit board.
If the positive contact, the negative contact and the two pins of the freewheel module 200 are connected by wires, the freewheel module 200 is likely to slip during the bonding and soldering reflow processes during the packaging process, and the wires are likely to be short-circuited due to movement, which affects the performance of the circuit. The connecting sheet 100 can be easily connected with the freewheel module 200, the connecting sheet 100 is fixed in position and stable in performance, the connecting sheet 100 is convenient to mount and divide, the process flow is simplified, and the production cost is reduced.
The plastic package part 300 is a plastic package layer formed by a package structure of the filling relay back pressure suppression module, plays a role in mounting, fixing, sealing, protecting the follow current module 200, enhancing the electric heating performance and the like, can adopt an epoxy resin piece, and has the characteristics of good cohesiveness, water resistance, heat resistance and the like. The packaging form of the relay back pressure suppression module packaging structure is preferably SMB or SMC packaging, and other types of surface mounting technologies or plug-in packaging technologies can be adopted.
In the prior art, the conventional coil freewheeling circuit is mainly formed by discrete devices or circuits thereof, and referring to fig. 2 (the dotted lines indicate a plurality of circuits), there are the following: a diode D for follow current is independently adopted, a resistor R is independently adopted, a capacitor C is independently adopted or a combined circuit of three devices is adopted, for example, the diode D for follow current is combined with the resistor R and the capacitor C; the resistor R is connected with the capacitor C in parallel and the like.
According to the traditional follow current circuit adopting the follow current diode device D, the characteristic that the voltage does not exceed 0.7V when the diode is conducted is utilized, the excellent performance that the reverse voltage of a clamping coil is up to 2V is achieved, and a semiconductor switch tube in a relay driving circuit can be effectively protected, however, compared with the situation that no follow current circuit exists, the turn-off time of a relay contact is increased by 5-10 times, and the turn-off delay is longer.
The traditional follow current circuit using resistor R or capacitor C, utilizes inductive coil and resistor or capacitor to form RLC damped oscillation circuit, the circuit limits reverse voltage ability from 10V-100V. The freewheeling circuit has certain cost advantage, but under the condition of variable voltage, the voltage stabilizing capability of the freewheeling circuit during clamping back voltage is weak, a high-voltage-resistant and high-cost semiconductor switch tube is required to be used for driving a relay coil, and the turn-off time is increased by 3-6 times compared with the turn-off time without the freewheeling circuit in terms of turn-off characteristics. The parameter debugging of the resistance-capacitance follow current mode is complex, when the selection is not proper, an underdamped oscillation state occurs, and the turn-off and bounce times of the contact are increased.
Conventional zener diodes and unidirectional TVS (Transient Voltage super) Transient Suppressor devices can also be used for overvoltage clamping protection, and cannot be applied to protection of reverse Voltage of a relay due to bidirectional conductivity thereof. The bidirectional TVS has positive and negative bidirectional protection voltage, but the application voltage range of the relay coil is limited by the positive clamping protection voltage, the follow current protection can be realized only in the state that the coil voltage is stable, the TVS is high in cost and cannot be widely used.
The follow current mode of the resistor and the capacitor is biased to certain promotion of turn-off characteristics and also considers certain back pressure protection, the bidirectional conductivity of the resistor and the capacitor enables a relay to increase certain working power consumption when the relay is driven to work, meanwhile, the voltage stabilizing capacity of the relay is weak, the relay works when the voltage change range is large, a high-cost high-voltage-resistant driving switching device needs to be selected, and the situation that the reliability of a driving circuit is reduced due to the fact that the coil back pressure exceeds the voltage resistance of the switching device is avoided.
When the relay is turned off, the load current on the contact can cause arc discharge, the arc discharge ablation time of the contact is greatly increased when the turn-off time is prolonged, and under the 50Hz alternating current power frequency load, after the turn-off time is more than 10ms (half cycle), because the coil is in an unexcited unstable state, the probability that the contact is disconnected by high peak current or high peak voltage is greatly increased because the coil passes through one or more peak currents. The conditions of the increase of the turn-off time and the increase of the rebound of the contact can both make the arc discharge of the relay intensified and the contact ablated, so that the service life of the relay is greatly reduced.
The existing follow current circuit or follow current device can not well realize the balance of voltage clamping protection and relay turn-off characteristics, and two extreme phenomena occur: one type of clamp voltage is low, but the turn-off time is long, and the other type of clamp voltage is short, but the back pressure clamp protection is not accurate, so that the power consumption is increased, the debugging is complex, the cost is high, and the like. Both of these results ultimately lead to reduced life, such as contact erosion. In order to improve the reliability of the relay application, most relay users adopt a contact capacity redundancy design method when designing a circuit to select a relay, and select a relay with the actual load current several times higher than the load capacity, so as to avoid or ignore the influence of a follow current loop on the turn-off characteristic of the relay, and greatly increase the cost.
The packaging structure of the relay back-pressure suppression module in the embodiment can be configured at two ends of a coil of a relay or a contactor, the structure of the packaging structure is completely different from the structures and types of internal chips such as a voltage regulator tube and a TVS (transient voltage suppressor), a device is not conductive when a forward voltage is applied to the coil of the relay to work, the working power consumption is not increased, and the device is reversely conducted to realize follow current only when a reverse voltage is formed after the coil is switched off, so that clamping is realized under a preset accurate voltage to protect a semiconductor switch tube of a relay driving circuit part from being punctured; meanwhile, the packaging structure of the relay back-pressure suppression module is applied in parallel to follow current, so that the change of the turn-off time of the relay is only about 2 times of that of the relay without a follow current loop, and the balance of voltage clamping protection and the turn-off characteristic of the relay is realized. Compared with the traditional diode, resistance-capacitance and other modes, the follow current loop of the relay has the best characteristic, and the optimal cost performance is realized.
Specifically, the comparison test results of different relay back-pressure suppression module packaging structures adopted by a certain relay coil can refer to table 1:
without follow current Diode with a high-voltage source Resistance 1.5k omega This embodiment device TVS
Off time 1.10ms minimum 6.32ms 5.8 times 2.61ms 2.3 times 1.71ms 1.55 times 1.65ms 1.5 times
Reverse clamp 378V (200-400V random) 1.64V (constant) 62.40V (varying with supply voltage) 22.4V (constant) 32.4V (constant)
Coil self-excitation positive pressure (under damping) 142V Is free of 30.2V Is free of 22.80V
Forward power Is free of Is free of At first, the driving power is increased Is free of Burn out when higher than the set value
Economy of use …… Is lower than Low cost, high cost of high-voltage switch Is low in Is higher than
Integration difficulty …… SMB packaging, small volume and easy integration 5 packaging volume is large, multiple devices are packaged, and integration is not easy SMB packaging, small volume and easy integration SMC packaging, large volume and difficult integration
TABLE 1
The packaging structure of the relay back-pressure suppression module forms SMD and or DIP packaged electronic components by a semiconductor packaging technology, the use cost is far lower than that of a TVS device, and compared with a diode, the cost is slightly higher at the same level; when the device is used, in the process of designing the PCB, the size of the device is completely the same as that of a common SMB, SMC package or TO plug-in series diode, and the device can be welded by adopting the same mature Surface Mount Technology (SMT) so as TO realize the replacement of a pin TO pin of a traditional follow current circuit adopting a common diode.
On a certain type of electromagnetic relay with a 12V rated voltage, the limited back pressure is 24V at most. After the relay circuits of multiple types are used, the realized effects and trends are the same as those in table 1.
In this embodiment, the relay back-pressure suppression module packaging structure includes a connection assembly, a chip assembly, and a plastic package part; the connecting component comprises two connecting pieces 100, and the mounting positions of the two connecting pieces 100 are opposite and arranged at intervals; the chip assembly comprises a follow current module 200, wherein the follow current module 200 is arranged between two mounting positions; the follow current module 200 comprises a diode submodule and a Zener diode submodule which are electrically connected with each other; the plastic package 300 of plastic package portion coupling assembling and chip subassembly, two connection pieces 100 keep away from the one end of installation position and extend from plastic package portion 300 in order to form two pins, correspond the both ends of connecting at relay coil. Therefore, the packaging structure of the relay back-pressure suppression module has the characteristics of the diode and the Zener tube respectively, the Zener tube has larger impedance when being conducted, and can quickly absorb the energy of the relay coil connected with the Zener tube, so that the turn-off time of the relay contact is shorter. The integration level of the packaging structure of the relay back-pressure suppression module is high, the size of the packaging structure is not larger than that of a common diode chip, even if the existing PCB is improved, the position of the original diode chip is replaced, and the renewal and the improvement of a follow current circuit using a diode device are facilitated.
In one embodiment, the diode sub-module is a diode chip, and the zener sub-module is a zener diode chip.
In this embodiment, the on-state current of the diode chip of the metal and semiconductor surface potential epitaxy structure should satisfy the current range of the relay coil, and the voltage-stabilizing value rated power of the zener diode chip also satisfies the application requirement of the relay.
Further, the diode chip and the zener diode chip may be stacked, and when stacked, which of the diode chip and the zener diode chip is located in an upper layer and which is located in a lower layer may be combined with actual conditions for setting, which is not limited.
Further, the chip assembly further comprises a first bonding pad, a second bonding pad and a third bonding pad; the diode chip is connected with the Zener diode chip through the first soldering lug, the diode chip is connected with the mounting position of one of the connecting lugs through the second soldering lug, and the Zener diode chip is connected with the mounting position of the other connecting lug through the third soldering lug.
Referring again to fig. 1, in the example where the upper chip is a diode chip 201 and the lower chip is a zener diode chip 202, the connection pad 100 located at the lowermost layer is a lower connection pad, and the connection pad 100 located at the upper layer is an upper connection pad. The diode chip 201 and the Zener diode chip 202 are welded by a first welding sheet 203 to realize connection; the diode chip 201 and the upper connecting sheet are connected after being welded by a second welding sheet 204; the zener diode chip 202 and the lower connecting pad are connected by a third bonding pad 205. It can be understood that each soldering lug is a metal soldering lug, each part structure is welded in the corresponding graphite plate, and the upper connecting piece and the lower connecting piece need to prepare frames with corresponding structures.
At the moment, a pin extending out of the upper connecting sheet is an anode of the relay back pressure suppression module packaging structure and is used for being connected with a cathode of the coil; the pin extending out of the lower connecting sheet is a cathode and is used for being connected with the positive pole of the coil, namely the positive pole of the power supply. If the upper chip is a Zener diode chip and the lower chip is a diode chip, the pin extending from the upper connecting sheet is used for being connected with the anode of the power supply, and the cathode extending from the lower connecting sheet is used for being connected with the cathode of the coil.
It should be noted that the diode chip and the zener diode chip may be arranged in parallel, but the parallel arrangement has a problem of low connection reliability and higher cost.
Therefore, the diode chip and the Zener diode chip are welded to form a chip group by adopting a multilayer chip stacking technology and are fixedly connected with the two connecting sheets 100, so that the volume of a PCB (printed Circuit Board) occupied by the structure can be reduced, the volume of the PCB is consistent with the volume occupied by the existing diode chip, and the direct replacement is more convenient.
Referring to fig. 3, in one embodiment, the diode sub-modules and the zener sub-modules are integrated into the backpressure suppressing chip 206; the chip assembly 200 further includes two fourth bonding pads 207, and two sides of the back-pressure suppressing chip 206 are connected to the mounting positions of the two connecting pads 100 through the two fourth bonding pads 207, respectively.
In this embodiment, two electrodes of the back-voltage suppression chip 206 are positive and negative electrode contacts of the freewheel module 200, and are respectively soldered to the two electrodes of the back-voltage suppression chip 206 through two fourth soldering tabs 207, so as to form the single-chip assembly 200. The PN junction structure of the diode submodule and the metal and semiconductor structure of the Zener diode submodule are integrated on one semiconductor chip through development, so that the integration level of the chip assembly 200 is greatly increased, the stability of the relay back-pressure suppression module packaging structure is improved, and the size is reduced.
Based on the hardware structure, the packaging structure of the relay back-pressure suppression module can replace a traditional diode or other follow current circuits and is applied to a semiconductor device for follow current integrated in a relay or a contactor or an electronic component of a follow current circuit part of a relay driving circuit; the method can also be used for back pressure suppression protection of low-voltage low-power direct current motors or other inductive coil loads, so that the relay contact is quickly turned off, and the balance between the relay turn-off characteristic and the protection of a driving circuit is realized.
The invention further provides a packaging method of the relay back-pressure suppression module, which is used for packaging the relay back-pressure suppression module packaging structure of the embodiment, and in one embodiment, the packaging method of the relay back-pressure suppression module comprises the following steps:
step S10, electrically connecting the diode submodule and the Zener diode submodule to form a follow current module;
step S20, fixing the current module between the mounting positions of the two connecting sheets;
step S30, performing plastic package on the fixed chip assembly and the connecting assembly to form the plastic package part; and extending one end of the connecting sheet far away from the mounting position from the plastic package part to form a pin.
The packaging method has simple steps, the diode sub-module and the Zener tube sub-module are electrically connected with each other to form a follow current module, the follow current module is provided with a positive pole and a negative pole, and the two poles of the follow current module are respectively fixed between the mounting positions of the two connecting pieces through metal welding pieces; then, carrying out plastic package on the fixed chip assembly and the connecting assembly to form a plastic package part; therefore, the integration level of the packaging structure of the relay back-pressure suppression module is improved, the stability of the system is further improved, and the requirement that products are increasingly miniaturized is met.
In one embodiment, the diode sub-module is a diode chip, and the zener sub-module is a zener diode chip; the step of electrically connecting the diode sub-modules and the Zener diode sub-modules to form a follow current module comprises the following steps:
step a, the diode chips and the Zener diode chips are connected in a stacking mode through first welding sheets to form a follow current module.
By stacking the diode chip and the zener diode chip, the stability of the flywheel module can be increased and the size can be reduced.
Further, the step of fixing the freewheel module between the mounting positions of the two connecting pieces includes:
b, connecting the diode chip with one of the mounting positions through a second soldering lug;
and c, connecting the Zener diode chip with the other mounting position through a third soldering lug.
The two connecting pieces connected with the follow current module are correspondingly stacked, wherein one connecting piece is an upper connecting piece, and the other connecting piece is a lower connecting piece; when the diode chip and the zener diode chip are stacked, which of the diode chip and the zener diode chip is located on the upper layer and which of the diode chip and the zener diode chip is located on the lower layer can be set in combination with the actual situation. Referring again to fig. 1, in the case where the upper chip is a diode chip 201 and the lower chip is a zener diode chip 202, the connection pad 100 located at the lowermost layer is a lower connection pad, and the connection pad 100 located at the upper layer is an upper connection pad. The diode chip 201 and the Zener diode chip 202 are welded by a first welding sheet 203, and after connection is realized; the diode chip 201 and the mounting position of the upper connecting sheet are welded through a second welding sheet 204 to realize connection; the zener diode chip 202 and the mounting position of the lower connecting sheet are welded through a third welding sheet 205 to realize connection; and then plastic packaging is carried out to form a plastic packaging part, so that the relay back pressure suppression module is packaged, and the operation is simple and convenient.
In an embodiment, the diode submodule and the zener submodule can also be a zener diode structure with a PN junction and a zener diode structure with a metal and semiconductor surface potential epitaxial structure respectively, the step of electrically connecting the diode submodule and the zener diode submodule to form the follow current module specifically includes integrating the diode structure, the metal and the zener diode structure into a back pressure suppression chip, the back pressure suppression chip has positive and negative poles, and then welding the two poles of the back pressure suppression chip and the mounting positions of the two connecting pieces respectively through the two fourth soldering lugs to realize connection, and then performing plastic package to form a plastic package part, so as to realize packaging of the relay back pressure suppression module, and the integration level is higher, and the stability is stronger.
The invention also provides a follow current circuit, which comprises a relay and a relay back pressure suppression module packaging structure, wherein two pins of the relay back pressure suppression module packaging structure are correspondingly connected with two ends of a coil of the relay; the packaging structure of the relay back-pressure suppression module is used for clamping induced electromotive force of a coil of the relay when the coil of the relay is powered off, and the packaging structure of the relay back-pressure suppression module can refer to the above embodiments and is not described herein again. It should be understood that, since the flywheel circuit of the present embodiment adopts the technical solution of the above-mentioned packaging structure of the relay back-pressure suppression module, the flywheel circuit has all the beneficial effects of the above-mentioned packaging structure of the relay back-pressure suppression module.
The above description is only an alternative embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications of equivalent structures and equivalent processes, which are made by using the contents of the present specification and the accompanying drawings, or directly or indirectly applied to other related technical fields, are included in the scope of the present invention.

Claims (10)

1. A relay back pressure suppression module packaging structure, comprising:
the connecting assembly comprises two connecting pieces, and the mounting positions of the two connecting pieces are opposite and arranged at intervals;
the chip assembly comprises a follow current module, and the follow current module is arranged between the two mounting positions; the follow current module comprises a diode submodule and a Zener diode submodule which are electrically connected with each other;
and the plastic package part is used for plastically packaging the connecting assembly and the chip assembly, and one end of each connecting sheet, which is far away from the mounting position, extends out of the plastic package part to form a pin.
2. The relay back-voltage suppression module packaging structure of claim 1, wherein the diode sub-module is a diode chip and the zener sub-module is a zener diode chip.
3. The relay backpressure suppressing module packaging structure of claim 2, wherein the chip assembly further comprises a first solder tab, a second solder tab, and a third solder tab; the diode chip is connected with the Zener diode chip through the first soldering lug, the diode chip is connected with the mounting position of one of the connecting lugs through the second soldering lug, and the Zener diode chip is connected with the mounting position of the other connecting lug through the third soldering lug.
4. The relay back-pressure suppression module packaging structure of claim 2, wherein the diode chip and the zener diode chip are stacked.
5. The relay backpressure suppression module packaging structure of claim 1, wherein the diode sub-module and the zener sub-module are integrated into a backpressure suppression chip; the chip assembly further comprises two fourth soldering lugs, and two sides of the back-pressure suppression chip are connected with the mounting positions of the connecting pieces through the two fourth soldering lugs respectively.
6. The relay back pressure suppression module package structure according to claim 1, wherein the plastic-molded part is an epoxy resin member.
7. A packaging method of a relay back-pressure suppression module, which is used for packaging the relay back-pressure suppression module packaging structure according to any one of claims 1 to 6, and comprises the following steps:
electrically connecting the diode sub-module and the Zener diode sub-module to form a follow current module;
fixing the follow current module between the mounting positions of the two connecting sheets;
carrying out plastic package on the fixed chip assembly and the connecting assembly to form the plastic package part; and extending one end of the connecting sheet far away from the mounting position from the plastic package part to form a pin.
8. The method for packaging a relay back pressure suppression module according to claim 7, wherein the diode sub-module is a diode chip and the zener sub-module is a zener diode chip; the step of electrically connecting the diode sub-modules and the Zener diode sub-modules to each other to form a follow current module comprises:
and the diode chip and the Zener diode chip are connected in a stacking mode through a first welding sheet to form a follow current module.
9. The method for packaging the relay back pressure suppression module according to claim 8, wherein the step of fixing the flywheel module between the mounting positions of the two connection pieces comprises:
connecting the diode chip with one of the mounting sites through a second soldering lug;
and connecting the Zener diode chip with the other mounting position through a third welding sheet.
10. The follow current circuit is characterized by comprising a relay and a relay back pressure suppression module packaging structure, wherein two pins of the relay back pressure suppression module packaging structure are correspondingly connected with two ends of a coil of the relay;
the relay back pressure suppression module package structure is used for clamping induced electromotive force of a coil of the relay when the coil of the relay is powered down, and the relay back pressure suppression module package structure is configured as the relay back pressure suppression module package structure according to any one of claims 1 to 6.
CN202210632568.XA 2022-06-07 2022-06-07 Relay back-voltage suppression module packaging structure, packaging method and follow current circuit Active CN114709199B (en)

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Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103427409A (en) * 2013-08-20 2013-12-04 绍兴旭昌科技企业有限公司 Surge protector
CN204045599U (en) * 2014-09-04 2014-12-24 山东沂光电子股份有限公司 A kind of dual chip high back-pressure plastic package power diode
CN106783783A (en) * 2017-01-12 2017-05-31 广东百圳君耀电子有限公司 Power-type paster semiconductor element
CN206370420U (en) * 2017-01-12 2017-08-01 广东百圳君耀电子有限公司 Power-type paster semiconductor element
CN107293597A (en) * 2016-04-11 2017-10-24 苏州锝耀电子有限公司 Surface mount rectifier part
CN107393822A (en) * 2017-07-17 2017-11-24 中国振华集团永光电子有限公司（国营第八七三厂） A kind of manufacture method suppressed with transient voltage with the glassivation fly-wheel diode of rectification function
CN108461459A (en) * 2018-04-02 2018-08-28 日照鲁光电子科技有限公司 A kind of cathode docking biphase rectification diode and its manufacturing process
CN210640241U (en) * 2019-12-17 2020-05-29 上海维安半导体有限公司 Modular packaged semiconductor anti-surge device
CN211266459U (en) * 2019-12-10 2020-08-14 恒大新能源技术(深圳)有限公司 Protection circuit and switching device control circuit
CN213635977U (en) * 2020-09-22 2021-07-06 伯恩半导体（深圳）有限公司 Paster diode packaging structure of multi-chip lamination
CN213635971U (en) * 2020-09-22 2021-07-06 伯恩半导体（深圳）有限公司 Chip diode packaging structure with chip module

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103427409A (en) * 2013-08-20 2013-12-04 绍兴旭昌科技企业有限公司 Surge protector
CN204045599U (en) * 2014-09-04 2014-12-24 山东沂光电子股份有限公司 A kind of dual chip high back-pressure plastic package power diode
CN107293597A (en) * 2016-04-11 2017-10-24 苏州锝耀电子有限公司 Surface mount rectifier part
CN106783783A (en) * 2017-01-12 2017-05-31 广东百圳君耀电子有限公司 Power-type paster semiconductor element
CN206370420U (en) * 2017-01-12 2017-08-01 广东百圳君耀电子有限公司 Power-type paster semiconductor element
CN107393822A (en) * 2017-07-17 2017-11-24 中国振华集团永光电子有限公司（国营第八七三厂） A kind of manufacture method suppressed with transient voltage with the glassivation fly-wheel diode of rectification function
CN108461459A (en) * 2018-04-02 2018-08-28 日照鲁光电子科技有限公司 A kind of cathode docking biphase rectification diode and its manufacturing process
CN211266459U (en) * 2019-12-10 2020-08-14 恒大新能源技术(深圳)有限公司 Protection circuit and switching device control circuit
CN210640241U (en) * 2019-12-17 2020-05-29 上海维安半导体有限公司 Modular packaged semiconductor anti-surge device
CN213635977U (en) * 2020-09-22 2021-07-06 伯恩半导体（深圳）有限公司 Paster diode packaging structure of multi-chip lamination
CN213635971U (en) * 2020-09-22 2021-07-06 伯恩半导体（深圳）有限公司 Chip diode packaging structure with chip module

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