CN114657540A - Method and apparatus for forming film on substrate surface and formed film - Google Patents
Method and apparatus for forming film on substrate surface and formed film Download PDFInfo
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- CN114657540A CN114657540A CN202011551936.5A CN202011551936A CN114657540A CN 114657540 A CN114657540 A CN 114657540A CN 202011551936 A CN202011551936 A CN 202011551936A CN 114657540 A CN114657540 A CN 114657540A
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- 239000000758 substrate Substances 0.000 title claims abstract description 51
- 238000000034 method Methods 0.000 title claims abstract description 31
- 239000002243 precursor Substances 0.000 claims abstract description 60
- 230000008021 deposition Effects 0.000 claims abstract description 34
- 238000000151 deposition Methods 0.000 claims description 33
- 238000000231 atomic layer deposition Methods 0.000 claims description 18
- 238000002309 gasification Methods 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 7
- 239000006200 vaporizer Substances 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 4
- 239000004615 ingredient Substances 0.000 claims description 4
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 229910052681 coesite Inorganic materials 0.000 claims description 2
- 229910052593 corundum Inorganic materials 0.000 claims description 2
- 229910052906 cristobalite Inorganic materials 0.000 claims description 2
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052682 stishovite Inorganic materials 0.000 claims description 2
- 229910052905 tridymite Inorganic materials 0.000 claims description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 2
- 230000008016 vaporization Effects 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 abstract description 19
- 239000010408 film Substances 0.000 description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000009826 distribution Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 3
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000000038 ultrahigh vacuum chemical vapour deposition Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012705 liquid precursor Substances 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- -1 oxygen ions Chemical class 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The application relates to the technical field of semiconductors, in particular to a method for forming a film on the surface of a substrate, which comprises the following steps: gasifying the precursor into precursor steam; and in the process of conveying the precursor vapor into the deposition chamber, the gas supply flow of the precursor vapor is increased by compressing and then expanding so as to form a film with uniform thickness on the surface of the substrate of the deposition chamber. The gas supply flow of the precursor vapor is improved, so that the precursor vapor can be conveyed to the center of the substrate and the top area of the deposition chamber, the insufficient supply of the precursor vapor at the center of the substrate is avoided, and a film with uniform thickness is formed on the surface of the substrate of the deposition chamber.
Description
Technical Field
The application relates to the technical field of semiconductors, in particular to a method and equipment for forming a film on the surface of a substrate and the formed film.
Background
In an Atomic Layer Deposition (ALD) process with a Conventional furnace (Conventional furnace) structure, when feeding into a Deposition chamber, a three-way valve located at the rear end of an evaporation apparatus and communicated with the evaporation apparatus is always in an open state, and due to the high viscosity of a precursor, sufficient material cannot be introduced into the center of a substrate, so that the thickness distribution between the center and the edge of a film on the substrate is not uniform, and the electrical characteristics of the film (such as a dielectric film) are affected, thereby causing the problem of leakage current.
Disclosure of Invention
The present application addresses the above-mentioned technical problems in the related art at least to some extent. To this end, the present application proposes a method, an apparatus, and a formed film for forming a film on a surface of a substrate, which solve the problem of uneven thickness distribution between the center and the edge of the film on the substrate.
In order to achieve the above object, a first aspect of the present application provides a method of forming a film on a surface of a substrate, comprising the steps of:
gasifying the precursor into precursor vapor;
and in the process of conveying the precursor vapor into the deposition chamber, the gas supply flow of the precursor vapor is increased by compressing and then expanding so as to form a film with uniform thickness on the surface of the substrate of the deposition chamber.
In a second aspect, the present application provides an apparatus for forming a film on a surface of a substrate, comprising:
a gasification device for gasifying the precursor into precursor vapor;
a deposition chamber having a substrate disposed therein for receiving the precursor vapor and depositing the precursor vapor on the substrate;
and the flow control valve is positioned between the gasification device and the deposition chamber, and the precursor vapor flows into the deposition chamber through the flow control valve and is used for adjusting the gas supply flow of the precursor vapor and is firstly closed for a period of time and then opened in the process of conveying the precursor vapor to the deposition chamber by the gasifier.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the application. Also, like reference numerals are used to refer to like parts throughout the drawings. In the drawings:
FIG. 1 is a schematic view of a portion of an apparatus for forming a film on a surface of a substrate according to some embodiments of the present disclosure;
FIG. 2 is a graph comparing the film thickness distribution formed on the surface of a substrate in the present application and the prior art;
FIG. 3 is a graph of capacitance distribution at various locations of a film formed on a substrate surface according to some embodiments of the present application.
Detailed Description
Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. It should be understood that the description is illustrative only and is not intended to limit the scope of the present disclosure. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present disclosure.
Various structural schematics according to embodiments of the present disclosure are shown in the figures. The figures are not drawn to scale, wherein certain details are exaggerated and possibly omitted for clarity of presentation. The shapes of various regions, layers, and relative sizes and positional relationships therebetween shown in the drawings are merely exemplary, and deviations may occur in practice due to manufacturing tolerances or technical limitations, and a person skilled in the art may additionally design regions/layers having different shapes, sizes, relative positions, as actually required.
In the context of the present disclosure, when a layer/element is referred to as being "on" another layer/element, it can be directly on the other layer/element or intervening layers/elements may be present. In addition, if a layer/element is "on" another layer/element in one orientation, then that layer/element may be "under" the other layer/element when the orientation is reversed.
Films (e.g., dielectric films, semiconductor films, insulating films, and metal films) can be formed during the production of semiconductor devices. The process of forming the film includes Atomic Layer Deposition (ALD). According to the deposition process, a process material is placed in an atomic layer deposition vapor environment, such as an organometallic compound. Atomic layer deposition vapor adsorbed on the material is decomposed by exposure to light or heat energy. A film (e.g., a semiconductor film, a dielectric film, or a metal film) can be formed on the surface of the material. One of the key elements of an atomic layer deposition process includes an evaporation apparatus that evaporates a liquid precursor into the form of a chemical vapor deposition vapor and delivers the atomic layer deposition vapor to an atomic layer deposition chamber. When the atomic layer deposition vapor is contacted with a substrate heated in the atomic layer deposition chamber, the atomic layer deposition vapor reacts on the substrate and forms a film.
Embodiments of one aspect of the present application relate to a method of forming a film on a surface of a substrate, comprising the steps of:
a substrate is provided and placed in a deposition chamber. In the present embodiment, the substrate is preferably a semiconductor substrate, and may be, for example, a bulk silicon semiconductor substrate, a silicon-on-insulator (SOI) semiconductor substrate, a germanium-on-insulator (GOI) semiconductor substrate, a silicon germanium semiconductor substrate, a III-V group compound semiconductor substrate, or an epitaxial thin film semiconductor substrate obtained by performing Selective Epitaxial Growth (SEG).
When the semiconductor substrate is a silicon-based semiconductor substrate, the semiconductor substrate may comprise, for example, dangling bonded silicon atoms that are not bonded with oxygen ions. The operating characteristics of the transistor may be stabilized by a hydrogen annealing process by which hydrogen atoms are bonded to dangling bonded silicon atoms of the semiconductor substrate. In this case, the hydrogen atom may be easily separated from the silicon atom, but boron may increase the binding energy between the silicon atom and the hydrogen atom. Therefore, the variable holding time or charge holding time of the capacitor can be improved.
Next, the precursor is heated and vaporized into precursor vapor in a vaporizer, which may be any one selected from a vaporizer, a bubbler, and a roaster. In this embodiment, the gasification device is selected from gasifiers.
Then, the precursor vapor is delivered into the deposition chamber, in the process, a switch for delivering the precursor vapor into the deposition chamber is closed and is opened after a period of time, specifically, as shown in fig. 2 and 3, compared with the method of opening the switch all the time, in the precursor vapor in the embodiment, the precursor vapor is compressed and expanded during the closing and opening of the switch, the gas supply flow of the precursor vapor is increased, so that the precursor vapor can be delivered to the center of the substrate and the top area of the deposition chamber, the insufficient supply of the precursor vapor at the center of the substrate is avoided, and a film with uniform thickness is formed on the substrate surface of the deposition chamber (as shown in fig. 2), thereby improving the electrical characteristics of the film (as shown in fig. 3), such as dielectric constant, leakage current and the like. In this embodiment, a vaporizer is used to vaporize the precursor into precursor vapor, a flow control valve is disposed between the vaporizer and the deposition chamber, the precursor vapor flows into the deposition chamber through the flow control valve, and the flow control valve is closed for 2 seconds and then opened, thereby increasing the gas supply flow rate of the precursor vapor.
It should be noted that the closing time of the flow control valve may also be 1 second, 3 seconds, etc., and this embodiment is not limited herein, and those skilled in the art can flexibly select the closing time as needed.
In addition, the precursor vapor can be deposited on the substrate by atomic layer deposition to form a film. However, the present embodiment is not limited thereto, and the precursor vapor may be deposited on the substrate by, for example, atmospheric pressure chemical vapor deposition (atmospheric pressure CVD), low-pressure chemical vapor deposition (low-pressure CVD), ultra-high vacuum chemical vapor deposition (ultra high vacuum CVD), plasma-enhanced chemical vapor deposition (plasma-enhanced CVD), Atomic Layer Deposition (ALD), and metal-organic chemical vapor deposition (metal-organic CVD).
The film formed on the substrate by the above method may be a dielectric film whose thickness distribution at the center and edge is uniform, specifically, a film ofThe material is selected from: HfO2、ZrO2、TiO2、Nb2O5、Al2O3And SiO2Any one ingredient or combination of ingredients.
As shown in fig. 1, an embodiment of another aspect of the present application is directed to an apparatus 100 for forming a film on a surface of a substrate, comprising:
a gasification device 10 for gasifying the precursor into precursor vapor; specifically, the gasification device 10 may be selected from: any of a gasifier, bubbler or roaster.
A deposition chamber (not shown) having a substrate disposed therein for receiving the precursor vapor and depositing the precursor vapor on the substrate;
and the flow control valve 11 is positioned between the gasification device 10 and the deposition chamber, and the precursor vapor flows into the deposition chamber through the flow control valve 11 and is used for adjusting the gas supply flow of the precursor vapor and is closed for 2 seconds and then opened before the gasification device delivers the precursor vapor to the deposition chamber.
The flow control valve 11 is a three-way valve, and the input end of the flow control valve 11 is connected with the gasification device 10;
the nozzle 12 is communicated with the deposition chamber, and a first output end of the flow control valve 11 is connected with the nozzle 12;
the air pump 13 is connected with the second output end of the flow control valve 11;
and the air exhaust device 14 is connected with the air pump 13.
In addition, the apparatus may also include a single-chamber type, a cluster type, a furnace tube type and a flip type (not shown in the figure), and the details are not described herein since the invention is not related thereto.
The apparatus and method of embodiments of the present application can be used to deliver atomic layer deposition vapor to fabricate semiconductor devices such as DRAM, Flash (planar, 3D NAND), and LCD by means of thin film deposition of materials. The apparatus 100 may assist etching and deposition to become uniform, thereby improving film quality. Although the apparatus is described in the context of an atomic layer deposition process, the apparatus may be applied to other deposition processes.
Further, the semiconductor device manufactured by the apparatus and method of the embodiments of the present application may be used in various chips.
Further, the chip having the above semiconductor apparatus may be used in various electronic devices, and specifically, the electronic devices may be smart phones, computers, tablets, wearable smart devices, artificial smart devices, mobile power sources, and the like.
In the above description, the technical details of patterning, etching, and the like of each layer are not described in detail. It will be appreciated by those skilled in the art that layers, regions, etc. of the desired shape may be formed by various technical means. In addition, in order to form the same structure, the person skilled in the art can also design a method which is not exactly the same as the method described above. In addition, although the embodiments are described separately above, this does not mean that the measures in the embodiments cannot be used in advantageous combination.
The embodiments of the present disclosure have been described above. However, these examples are for illustrative purposes only and are not intended to limit the scope of the present disclosure. The scope of the disclosure is defined by the appended claims and equivalents thereof. Various alternatives and modifications can be devised by those skilled in the art without departing from the scope of the disclosure, and these alternatives and modifications are intended to fall within the scope of the disclosure.
Claims (10)
1. A method of forming a film on a surface of a substrate, comprising the steps of:
gasifying the precursor into precursor steam;
and in the process of conveying the precursor vapor into the deposition chamber, the gas supply flow of the precursor vapor is increased by compressing and then expanding so as to form a film with uniform thickness on the surface of the substrate of the deposition chamber.
2. The method of claim 1, wherein increasing the gas supply flow of the precursor vapor comprises:
and closing a switch for delivering the precursor vapor into the deposition chamber, maintaining for a period of time, and then opening.
3. The method of claim 2, wherein a vaporizer is used to vaporize a precursor into a precursor vapor, a flow control valve is disposed between the vaporizer and the deposition chamber, the precursor vapor flows into the deposition chamber through the flow control valve, and the flow control valve is closed for a period of time and then opened to increase a gas supply flow of the precursor vapor.
4. The method of claim 3, wherein the time is 1-3 seconds.
5. The method of any one of claims 1-4, wherein the precursor vapor is formed on the substrate by atomic layer deposition.
6. The film of claim 5, wherein the film is made of a material selected from the group consisting of: HfO2、ZrO2、TiO2、Nb2O5、Al2O3And SiO2Any one ingredient or combination of ingredients.
7. An apparatus for forming a film on a surface of a substrate, comprising:
the gasification device is used for gasifying the precursor into precursor steam;
a deposition chamber having a substrate disposed therein for receiving the precursor vapor and depositing the precursor vapor on the substrate;
and the flow control valve is positioned between the gasification device and the deposition chamber, the precursor vapor flows into the deposition chamber through the flow control valve and is used for adjusting the gas supply flow of the precursor vapor, and the precursor vapor is firstly closed for a period of time and then opened in the process of conveying the precursor vapor to the deposition chamber by the gasification device.
8. The apparatus of claim 7, wherein the flow control valve is a three-way valve, and an input end of the flow control valve is connected to the vaporizing device, the apparatus further comprising:
the nozzle is communicated with the deposition chamber, and a first output end of the flow control valve is connected with the nozzle;
the air pump is connected with the second output end of the flow control valve;
and the air exhaust device is connected with the air pump.
9. The apparatus of claim 7, wherein the vaporizing device is selected from the group consisting of: any of a gasifier, bubbler or roaster.
10. The apparatus of any one of claims 7-9, further comprising single chamber, cluster, furnace, and flip-chip apparatus.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011551936.5A CN114657540A (en) | 2020-12-24 | 2020-12-24 | Method and apparatus for forming film on substrate surface and formed film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011551936.5A CN114657540A (en) | 2020-12-24 | 2020-12-24 | Method and apparatus for forming film on substrate surface and formed film |
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| CN114657540A true CN114657540A (en) | 2022-06-24 |
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| CN202011551936.5A Pending CN114657540A (en) | 2020-12-24 | 2020-12-24 | Method and apparatus for forming film on substrate surface and formed film |
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| TW200638025A (en) * | 2004-12-17 | 2006-11-01 | Mks Instr Inc | Pulsed mass flow delivery system and method |
| CN101040060A (en) * | 2004-06-28 | 2007-09-19 | 剑桥纳米科技公司 | Vapor deposition systems and methods |
| CN103221576A (en) * | 2010-09-29 | 2013-07-24 | Mks仪器公司 | System for and method of fast pulse gas delivery |
| CN103608486A (en) * | 2011-02-25 | 2014-02-26 | Mks仪器公司 | System for and method of fast pulse gas delivery |
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| CN104715995A (en) * | 2013-12-17 | 2015-06-17 | 中微半导体设备(上海)有限公司 | Gas supply device and plasma reaction unit thereof |
| CN109207963A (en) * | 2017-07-05 | 2019-01-15 | 株式会社堀场Stec | fluid control device, fluid control method and program storage medium |
| CN109321895A (en) * | 2017-07-31 | 2019-02-12 | 北京北方华创微电子装备有限公司 | A kind of charge delivery mechanism and its air inlet method for ALD technique |
-
2020
- 2020-12-24 CN CN202011551936.5A patent/CN114657540A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101040060A (en) * | 2004-06-28 | 2007-09-19 | 剑桥纳米科技公司 | Vapor deposition systems and methods |
| TW200638025A (en) * | 2004-12-17 | 2006-11-01 | Mks Instr Inc | Pulsed mass flow delivery system and method |
| CN103221576A (en) * | 2010-09-29 | 2013-07-24 | Mks仪器公司 | System for and method of fast pulse gas delivery |
| CN103608486A (en) * | 2011-02-25 | 2014-02-26 | Mks仪器公司 | System for and method of fast pulse gas delivery |
| CN104040017A (en) * | 2011-10-21 | 2014-09-10 | 欧瑞康先进科技股份公司 | Direct liquid deposition |
| CN104715995A (en) * | 2013-12-17 | 2015-06-17 | 中微半导体设备(上海)有限公司 | Gas supply device and plasma reaction unit thereof |
| CN109207963A (en) * | 2017-07-05 | 2019-01-15 | 株式会社堀场Stec | fluid control device, fluid control method and program storage medium |
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