CN114640328B - Temperature-resistant SiC MOSFET driving circuit capable of inhibiting on-current oscillation and control method thereof - Google Patents
Temperature-resistant SiC MOSFET driving circuit capable of inhibiting on-current oscillation and control method thereof Download PDFInfo
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- 230000010355 oscillation Effects 0.000 title claims abstract description 78
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- 230000008569 process Effects 0.000 claims abstract description 20
- 238000002955 isolation Methods 0.000 claims abstract description 18
- 230000005764 inhibitory process Effects 0.000 claims abstract description 8
- 230000003071 parasitic effect Effects 0.000 claims description 22
- 230000000630 rising effect Effects 0.000 claims description 13
- 230000002829 reductive effect Effects 0.000 claims description 10
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 131
- 229910010271 silicon carbide Inorganic materials 0.000 description 131
- 230000008859 change Effects 0.000 description 18
- 238000010586 diagram Methods 0.000 description 12
- 238000013461 design Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 230000006870 function Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000003321 amplification Effects 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 230000000670 limiting effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
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- 230000009286 beneficial effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K2017/0806—Modifications for protecting switching circuit against overcurrent or overvoltage against excessive temperature
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
The application relates to the technical field of power electronic circuits, in particular to a temperature-resistant SiC MOSFET driving circuit capable of inhibiting on-current oscillation and a control method thereof. The driving circuit comprises an isolation input circuit, a push-pull amplifying circuit, a grid output circuit and an auxiliary control circuit; the isolation input circuit is used for isolating the PWM driving signal and the auxiliary circuit control signal; the push-pull amplifying circuit is used for converting the driving signal into a driving waveform signal corresponding to the driving voltage of the SiC MOSFET; the grid output circuit is used for converting the driving waveform signal into a grid driving signal so as to finish driving the SiC MOSFET; the auxiliary control circuit is used for controlling the opening process of the SiC MOSFET based on the isolated auxiliary signal so as to complete the suppression of the open current oscillation. The application adopting the scheme can keep the performance advantage of the SiC MOSFET while achieving a strong inhibition effect on the on-current oscillation.
Description
Technical Field
The application relates to the technical field of power electronic circuits, in particular to a temperature-resistant SiC MOSFET driving circuit capable of inhibiting on-current oscillation and a control method thereof.
Background
As a new generation of semiconductor devices, the SiC material has the characteristics of high voltage resistance, high frequency resistance, high temperature resistance, and the SiC MOSFET has the characteristics of high blocking voltage, high junction temperature, high switching speed and the like compared with a silicon IGBT. SiC MOSFETs are expected to replace silicon IGBTs in many application fields, such as electrified traffic, aerospace, etc. However, the high temperature resistance of the SiC MOSFET is not fully utilized at present, and in practical application, a heat dissipation device is still required to be added to the device to reduce the ambient temperature. If the high temperature resistance of the SiC MOSFET is considered, the device is directly resistant to high temperature, so that the heat dissipation design is simplified, and the driving circuit also needs to consider temperature factors, and mainly comprises the following two aspects:
In a first aspect, a device is selected. In practical applications, the driving circuit is physically located close to the device, so that when the device is directly tolerant to high temperatures, the driving circuit also needs to be tolerant to high temperatures. The traditional driving circuit is resistant to the temperature of 85 ℃, and a chip, a semiconductor device and the like in the driving circuit adopt silicon-based devices and cannot meet the temperature resistant requirement, so that the driving circuit is required to be specially designed, and the chip and the components resistant to the high temperature are selected. Although no mature high temperature resistant driving circuit design can be referred to before, with the development of semiconductor devices, semiconductor devices such as triodes and MOSFETs with the temperature resistance of 150 ℃ are already appeared in the market, and the device type selection requirement of the driving circuit is met.
In a second aspect, a device temperature characteristic. Because the SiC MOSFET has high switching speed, the current stress and the voltage stress in the switching-on and switching-off processes of the device are large. Along with the rise of temperature, the turn-on process of the SiC MOSFET is accelerated, and the turn-off process is slowed down, which means that under high-temperature driving, the current overshoot and oscillation when the device is turned on are more serious, and the device is easy to be damaged, so that the current overshoot and oscillation in the turn-on process need to be restrained. However, in the related art, the performance advantage of the SiC MOSFET cannot be maintained while achieving a strong suppression effect.
In addition, the sectional control method of the existing driving circuit is adopted to realize sectional control of each stage of the switching process, auxiliary signals are required to be introduced in the control process to carry out auxiliary control, but the sectional control has the defects of temperature resistance, temperature drift and the like in high-temperature application, so that the auxiliary control lacks flexibility for temperature change.
Disclosure of Invention
The present application aims to solve at least one of the technical problems in the related art to some extent.
Therefore, a first object of the present application is to provide a temperature-resistant SiC MOSFET driving circuit capable of suppressing on-current oscillation, so as to solve the technical problem that the performance advantage of the SiC MOSFET cannot be retained while achieving a strong suppression effect on the on-current oscillation in the related art.
The second objective of the present application is to provide a control method of a temperature-resistant SiC MOSFET driving circuit capable of suppressing on-current oscillation, so as to solve the technical problem that the auxiliary control lacks flexibility for temperature variation due to the defects of temperature resistance, temperature drift, etc. existing in the high-temperature application of the sectional control.
In order to achieve the above object, a temperature-resistant SiC MOSFET driving circuit capable of suppressing on-current oscillation according to an embodiment of the first aspect of the present application includes:
The input end of the isolation input circuit receives a PWM driving signal and an auxiliary circuit control signal and is used for isolating the PWM driving signal and the auxiliary circuit control signal;
The input end of the push-pull amplifying circuit is connected with the output end of the isolation input circuit and is used for receiving the isolated PWM driving signal and converting the isolated PWM driving signal into a driving waveform signal corresponding to the driving voltage of the SiC MOSFET;
The input end of the grid output circuit is connected with the output end of the push-pull amplifying circuit, and the output end of the grid output circuit is connected with the grid of the SiC MOSFET and is used for converting the driving waveform signal into a grid driving signal so as to finish driving the SiC MOSFET;
And the input end of the auxiliary control circuit is connected with the output end of the isolation input circuit, and the output end of the auxiliary control circuit is connected with the grid electrode of the SiC MOSFET and is used for controlling the opening process of the SiC MOSFET based on the isolated auxiliary signal so as to complete the inhibition of the oscillation of the open current.
Optionally, in one embodiment of the present application, the push-pull amplifying circuit includes a PNP transistor and an NPN transistor;
the base electrode of the PNP transistor and the base electrode of the NPN transistor receive the driving signal;
The collector of the NPN transistor is connected with a positive power supply, and the collector of the PNP transistor is connected with a negative power supply;
The emitter of the PNP transistor is connected with the emitter of the NPN transistor;
and the emitter of the PNP transistor and the emitter of the NPN transistor are output ends of the push-pull amplifying circuit.
Optionally, in one embodiment of the present application, the auxiliary control circuit includes a base resistor, a collector resistor, and an auxiliary triode;
One end of the base resistor is used for receiving an auxiliary signal; the base electrode of the auxiliary triode is connected with the other end of the base resistor, the emitter electrode of the auxiliary triode is connected with a negative power supply, and the collector electrode of the auxiliary triode is connected with one end of the collector resistor; and the other end of the collector resistor is connected with the grid electrode of the SiC MOSFET.
Optionally, in an embodiment of the present application, all components in the temperature-resistant SiC MOSFET driving circuit capable of suppressing on-current oscillation are Gao Wenyuan devices;
the push-pull amplifying circuit is integrated on a chip based on SOI technology.
To achieve the above objective, a second aspect of the present application provides a control method for a temperature-resistant SiC MOSFET driving circuit capable of suppressing on-current oscillation, which is provided by the first aspect of the present application, and includes:
determining a circuit equation of the SiC MOSFET in the constant current region based on the kirchhoff current law and the kirchhoff voltage law;
Determining a waveform of the auxiliary signal based on the circuit equation;
and controlling the temperature-resistant SiC MOSFET driving circuit capable of inhibiting the oscillation of the on current based on the auxiliary signal and the control signal.
Optionally, in an embodiment of the present application, the determining a circuit equation of the SiC MOSFET in the constant current region based on kirchhoff current law and kirchhoff voltage law includes:
Based on kirchhoff's current law, the KCL equation for the drain of the SiC MOSFET at the constant current region is determined according to the following equation:
where i d is the drain current, i l is the load current, Is parasitic capacitance current;
Based on kirchhoff's voltage law, the KVL equation for the main loop with SiC MOSFETs in constant current region is determined according to:
Wherein L d is drain parasitic inductance, L s is common source parasitic inductance, i d is drain current, V ds is drain-source voltage, For parasitic capacitance voltage, R pl is the main loop equivalent parasitic resistance, and V dc is the supply voltage.
Optionally, in one embodiment of the present application, the determining the waveform of the auxiliary signal based on the circuit equation includes:
Based on the circuit equation, determining that the waveform of the auxiliary signal reaches a high level in the preset time when the SiC MOSFET enters the constant current region according to the relation between the grid voltage and the drain current when the SiC MOSFET is in the constant current region.
Optionally, in one embodiment of the present application, the temperature-resistant SiC MOSFET driving circuit capable of suppressing on-current oscillation is controlled based on the auxiliary signal and the control signal, and includes:
controlling the temperature-resistant SiC MOSFET driving circuit capable of inhibiting the on-current oscillation to be in a first stage, wherein the driving signal is controlled to jump to a high level, and the auxiliary signal is kept at a low level, so that the grid voltage of the SiC MOSFET gradually rises from a negative power supply voltage to a threshold voltage, the drain-source voltage of the SiC MOSFET is the power supply voltage, and the drain current of the SiC MOSFET is 0;
Controlling the temperature-resistant SiC MOSFET driving circuit capable of inhibiting the on-current oscillation to be in a second stage, wherein the driving signal is controlled to be kept at a high level, so that the grid voltage of the SiC MOSFET is gradually increased from a threshold voltage to a Miller platform voltage, the drain-source voltage of the SiC MOSFET is kept at a power supply voltage, and the drain current of the SiC MOSFET is gradually increased; controlling the auxiliary signal to jump to a high level before the drain current rises to the load current, thereby slowing down the rate of rise of the drain current;
Controlling the temperature-resistant SiC MOSFET driving circuit capable of inhibiting the on-current oscillation to be in a third stage, wherein the driving signal is controlled to be kept at a high level, and the auxiliary signal jumps to be at a low level, so that the grid voltage of the SiC MOSFET is kept at a miller platform voltage, the drain-source voltage of the SiC MOSFET is gradually reduced to a conducting voltage, and the drain current of the SiC MOSFET gradually falls back to the magnitude of a load current after rising to a peak;
and controlling the temperature-resistant SiC MOSFET driving circuit capable of inhibiting the on-current oscillation to be in a fourth stage, wherein the driving signal is controlled to be kept at a high level, and the auxiliary signal is controlled to be kept at a low level, so that the grid voltage of the SiC MOSFET gradually rises to a positive power supply voltage, the drain-source voltage of the SiC MOSFET is kept at a conducting voltage, and the drain current of the SiC MOSFET is kept at a load current.
Optionally, in one embodiment of the present application, before the controlling the temperature-resistant SiC MOSFET driving circuit capable of suppressing on-current oscillation based on the auxiliary signal and the control signal, the method further includes:
determining parameters of the temperature-resistant SiC MOSFET driving circuit capable of inhibiting the oscillation of the opening current;
The parameters include the resistance of the gate output circuit, the resistance of the base resistor and the resistance of the collector resistor.
Optionally, in one embodiment of the present application, the determining the parameter of the temperature-resistant SiC MOSFET driving circuit capable of suppressing the on-current oscillation includes:
Determining a resistance value of the gate output circuit according to:
Wherein R g1 is the resistance value of the grid output circuit, VDD is the positive power supply voltage, VSS is the negative power supply voltage, and i p is the driving current peak value of the push-pull amplifying circuit;
Determining the resistance of the base resistor according to the following formula:
Wherein R b1 is the resistance of the base resistor, For controlling the voltage value of the signal,/>For the voltage value between the time base stage and the emitting stage of the auxiliary triode, i BM is the base current peak value of the auxiliary triode;
the resistance of the collector resistor is determined according to the following formula:
Wherein R C1 is the resistance of the collector resistor, V gs is the gate voltage, VDD is the positive supply voltage, VSS is the negative supply voltage, R gl is the resistance of the gate output circuit, and V ce is the collector-emitter voltage.
In summary, the technical solution provided by the embodiment of the application at least brings the following beneficial effects:
1) The driving circuit provided by the embodiment of the application can stably work in a high-temperature environment, and can slow down the rising speed of drain current in the SiC MOSFET switching-on process when the SiC MOSFET switching-on process is accelerated in the high-temperature environment, so that the switching-on current oscillation is inhibited;
2) Compared with the traditional mode of increasing the driving resistance, the driving circuit provided by the embodiment of the application can retain the performance advantage of the SiC MOSFET under the condition of achieving the same on-current oscillation inhibition effect.
Additional aspects and advantages of the application will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the application.
Drawings
The foregoing and/or additional aspects and advantages of the application will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings, in which:
FIG. 1 is a schematic diagram of a temperature-resistant SiC MOSFET driving circuit capable of suppressing on-current oscillation according to an embodiment of the application;
fig. 2 is a schematic diagram of a half-bridge driving circuit of a temperature-resistant SiC MOSFET according to an embodiment of the present application;
FIG. 3 is a schematic diagram of a high temperature driver according to an embodiment of the present application;
FIG. 4 is a flow chart of a control method of a temperature-resistant SiC MOSFET driving circuit capable of suppressing on-current oscillation according to an embodiment of the application
FIG. 5 is a schematic diagram of a parasitic parametric model of a SiC MOSFET according to an embodiment of the present application;
FIG. 6 is a schematic diagram of a typical waveform of a driving circuit according to an embodiment of the present application;
FIG. 7 is a schematic diagram of a current flow path in a first stage according to an embodiment of the present application;
FIG. 8 is a schematic diagram of a second stage of current flow path according to an embodiment of the present application;
FIG. 9 is a schematic diagram of a third stage of current flow path according to an embodiment of the present application;
FIG. 10 is a schematic diagram of a fourth stage of current flow path according to an embodiment of the present application;
Fig. 11 is an equivalent circuit schematic diagram of SiC MOSFETQH of the upper half-bridge and the auxiliary triode when the second stage auxiliary circuit provided by the embodiment of the present application shunts.
Detailed Description
Embodiments of the present application are described in detail below, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to like or similar elements or elements having like or similar functions throughout. The embodiments described below by referring to the drawings are illustrative only and are not to be construed as limiting the application. On the contrary, the embodiments of the application include all alternatives, modifications and equivalents as may be included within the spirit and scope of the appended claims.
According to some embodiments, in the related art, for suppression of on-current oscillation, there are generally two methods in driving design:
The first method is as follows: reducing stray inductance by optimizing the PCB design;
The second method is as follows: the switching oscillation is suppressed by increasing the gate drive resistance.
The first method has high requirements on hardware design and arrangement, is limited by size, space layout and the like, and is difficult to further reduce stray inductance after being optimized to a certain degree. While the second method has a certain effect on the suppression of the on-current oscillation, it can cause the decrease of the switching speed and the increase of the switching loss of the silicon carbide Metal-Oxide-Semiconductor Field-Effect Transistor (SiC MOSFET) field effect transistor, and lose the advantage of the high-speed switching of the SiC MOSFET device itself.
In some embodiments, in order to suppress the crosstalk voltage, an active clamping circuit needs to be designed in the driving circuit, and the active clamping circuit also has a certain suppression effect on overshoot and oscillation of current and voltage in the switching process, but has no pertinence, and has no obvious effect on suppressing the oscillation of the switching current.
In some embodiments, the buffer circuit is added in the power circuit to inhibit current overshoot and oscillation, but devices such as additional capacitance and inductance in the power circuit increase reactive power loss on the power side and reduce efficiency, so that the related art inhibits on current overshoot and oscillation from the driving circuit.
According to some embodiments, the existing driving circuit adopts a sectional control method to realize sectional control on each stage of the switching process, and an auxiliary signal is required to be introduced in the control process to control the auxiliary MOSFET to be turned on so as to slow down the current rising speed in the turn-on process, thereby reducing the current overshoot. But the generation of the auxiliary signal is obtained by delaying the PWM drive signal by the auxiliary logic circuit. The circuit is not designed to take into account the high temperature application, and the devices of the auxiliary logic circuit used are not tolerant to high temperature. Therefore, the device of the auxiliary logic circuit has temperature drift at high temperature, and the delay time of the auxiliary signal relative to the PWM signal is changed, so that the auxiliary logic circuit has no temperature stability and lacks flexibility in control.
It is easy to understand that in the design of the driving circuit, the related art cannot achieve the effect of strongly suppressing the on-current oscillation while retaining the performance advantage of the SiC MOSFET. In addition, the sectional control has the defects of temperature resistance, temperature drift and the like in high-temperature application, so that the auxiliary control has no flexibility on temperature change.
The present application will be described in detail with reference to specific examples.
Fig. 1 is a schematic diagram of a temperature-resistant SiC MOSFET driving circuit capable of suppressing on-current oscillation according to an embodiment of the present application.
As shown in fig. 1, a temperature-resistant SiC MOSFET driving circuit capable of suppressing on-current oscillation provided by an embodiment of the present application includes:
The input end of the isolation input circuit receives the PWM driving signal and the auxiliary circuit control signal and is used for isolating the PWM driving signal and the auxiliary circuit control signal;
the input end of the push-pull amplifying circuit is connected with the output end of the isolation input circuit and is used for receiving the isolated PWM driving signal and converting the isolated PWM driving signal into a driving waveform signal corresponding to the driving voltage of the SiC MOSFET;
The input end of the grid output circuit is connected with the output end of the push-pull amplifying circuit, and the output end of the grid output circuit is connected with the grid of the SiC MOSFET and is used for converting a driving waveform signal into a grid driving signal so as to finish driving the SiC MOSFET;
And the input end of the auxiliary control circuit is connected with the output end of the isolation input circuit, and the output end of the auxiliary control circuit is connected with the grid electrode of the SiC MOSFET and is used for controlling the opening process of the SiC MOSFET based on the auxiliary signal so as to complete the inhibition of the on-current oscillation.
According to some embodiments, isolating the PWM drive signal received by the input circuit does not refer specifically to a fixed drive signal. For example, the driving signal may be a driving signal generated by a CPU control driving voltage waveform generating circuit.
In the embodiment of the application, the push-pull amplifying circuit comprises a PNP transistor and an NPN transistor;
the base electrode of the PNP transistor and the base electrode of the NPN transistor receive driving signals;
the collector of the NPN transistor is connected with a positive power supply, and the collector of the PNP transistor is connected with a negative power supply;
an emitter of the PNP transistor is connected with an emitter of the NPN transistor;
The emitter of the PNP transistor and the emitter of the NPN transistor are output ends of the push-pull amplifying circuit.
In some embodiments, the gate output circuit is not particularly limited to a fixed circuit, and may be formed by at least one gate resistor connected in parallel, for example.
In some embodiments, the auxiliary control circuit refers to a circuit that can pull down the gate voltage at a preset time. The auxiliary control circuit is not particularly limited to a certain fixed circuit. For example, the auxiliary control circuit may be composed of a gate resistor, a drain resistor, and a MOSFET. The auxiliary control circuit may also include a base resistor, a collector resistor, and an auxiliary transistor.
In some embodiments, when the auxiliary control circuit includes a base resistor, a collector resistor, and an auxiliary transistor, one end of the base resistor is configured to receive the auxiliary signal; the base electrode of the auxiliary triode is connected with the other end of the base electrode resistor, the emitter electrode of the auxiliary triode is connected with a negative power supply, and the collector electrode of the auxiliary triode is connected with one end of the collector electrode resistor; the other end of the collector resistor is connected with the grid electrode of the SiC MOSFET.
It is easy to understand that the adoption of at least one gate resistor in parallel can reduce errors, and meanwhile, the resistance value of the gate output circuit is convenient to configure, and the resistance value of the gate output circuit is not too large, so that the switching speed and the switching loss of the device are not influenced. The auxiliary control circuit controls the SiC MOSFET to be turned on so as to perform pull-down control on the grid output circuit and slow down the rising rate of the grid voltage.
In the embodiment of the application, all components in the temperature-resistant SiC MOSFET driving circuit capable of inhibiting the oscillation of the on current are Gao Wenyuan-resistant components;
based on SOI technology, the push-pull amplifying circuit is integrated into one chip.
With a scenario example, fig. 2 is a schematic diagram of a half-bridge driving circuit of a temperature-resistant SiC MOSFET according to an embodiment of the present application. As shown in fig. 2, taking SiC MOSFETQH of the above half-bridge as an example, the half-bridge driving circuit includes a push-pull amplifying circuit 210, a gate output circuit 220 and an auxiliary control circuit 230, wherein,
The push-pull amplifying circuit 210 includes a PNP transistor and an NPN transistor, and a base of the PNP transistor and a base of the NPN transistor receive the driving signal pwm_t; the collector of the NPN transistor is connected with a positive power supply VDD, and the collector of the PNP transistor is connected with a negative power supply VSS; an emitter of the PNP transistor is connected with an emitter of the NPN transistor, and the emitter of the PNP transistor and the emitter of the NPN transistor are output ends of the push-pull amplifying circuit 210;
The gate output circuit 220 is a gate resistor Rg1; one end of Rg1 is connected with the output end of the push-pull amplifying circuit 210, and the other end of Rg1 is connected with the grid electrode of QH;
The auxiliary control circuit 230 includes a base resistor Rb1, a collector resistor Rc1, and an auxiliary transistor QT; one end of Rb1 receives the auxiliary signal CTRL_T; the base electrode of QT is connected with the other end of Rb1, the emitter electrode of QT is connected with a negative power supply VSS, and the collector electrode of QT is connected with one end of Rc 1; the other end of Rc1 is connected with the grid electrode of QH.
In some embodiments, the temperature-resistant SiC MOSFET driving circuit provided by the embodiments of the present application can be integrated into one driver, as shown in fig. 3. The driver comprises an isolation input circuit, a push-pull amplifying circuit, a desaturation detection circuit, a driving output circuit and an auxiliary control circuit. The isolation input circuit comprises a primary side chip, a digital isolator and a transformer; the push-pull amplifying circuit is integrated on the secondary side chip.
In some embodiments, the input of the primary side chip receives the PWM drive signal generated by the CPU control drive voltage waveform generation circuit. The primary side of the transformer is connected with the output end of the primary side chip, and the secondary side of the transformer is connected with the input end of the secondary side chip and is used for isolating PWM driving signals and converting voltage between the CPU level grade and the SiC MOSFET driving level grade.
In some embodiments, an input terminal of the desaturation detection circuit is connected to a drain electrode of the SiC MOSFET, and an output terminal of the desaturation detection circuit is connected to an input terminal of the secondary side chip, and is used for detecting that the SiC MOSFET exits from a saturation region working state, and comparing with a reference voltage generated in the secondary side chip, and generating a blocking pulse or other protection actions as a sign of occurrence of a short circuit fault. The input end of the digital isolator is connected with the output end of the primary side chip, and the output end of the digital isolator is connected with the input end of the secondary side chip and is used for realizing the isolation between a weak current control circuit where a CPU is positioned and a main circuit strong current part where a SiC MOSFET is positioned.
In some embodiments, the drive is a high temperature drive. The secondary chip of the integrated push-pull amplifying circuit adopts a high-temperature resistant SOI integrated chip.
In summary, in the circuit provided by the embodiment of the application, through the isolation input circuit, the input end of the isolation input circuit receives the PWM driving signal and the auxiliary circuit control signal, and is used for isolating the PWM driving signal and the auxiliary circuit control signal; the input end of the push-pull amplifying circuit is connected with the output end of the isolation input circuit and is used for receiving the isolated PWM driving signal and converting the isolated PWM driving signal into a driving waveform signal corresponding to the driving voltage of the SiC MOSFET; the input end of the grid output circuit is connected with the output end of the push-pull amplifying circuit, and the output end of the grid output circuit is connected with the grid of the SiC MOSFET and is used for converting a driving waveform signal into a grid driving signal so as to finish driving the SiC MOSFET; and the input end of the auxiliary control circuit is connected with the output end of the isolation input circuit, and the output end of the auxiliary control circuit is connected with the grid electrode of the SiC MOSFET and is used for controlling the opening process of the SiC MOSFET based on the auxiliary signal so as to complete the inhibition of the on-current oscillation. The application can maintain the performance advantage of the SiC MOSFET while achieving a strong inhibition effect on the on-current oscillation.
In order to realize the embodiment, the application also provides a control method of the temperature-resistant SiC MOSFET driving circuit capable of inhibiting the oscillation of the on current.
Fig. 4 is a schematic flow chart of a control method of a temperature-resistant SiC MOSFET driving circuit capable of suppressing on-current oscillation according to an embodiment of the present application.
As shown in fig. 4, a control method of a temperature-resistant SiC MOSFET driving circuit capable of suppressing on-current oscillation includes the steps of:
Step 410, determining a circuit equation of the SiC MOSFET in the constant current region based on kirchhoff current law and kirchhoff voltage law;
Step 420, determining the waveform of the auxiliary signal based on the circuit equation;
And step 430, controlling a temperature-resistant SiC MOSFET driving circuit capable of inhibiting the oscillation of the on current based on the auxiliary signal and the control signal.
In the embodiment of the application, based on kirchhoff current law and kirchhoff voltage law, determining a circuit equation of an SiC MOSFET in a constant current region comprises:
Based on kirchhoff's current law, the KCL equation for the drain of the SiC MOSFET at the constant current region is determined according to the following equation:
where i d is the drain current, i l is the load current, Is parasitic capacitance current;
Based on kirchhoff's voltage law, the KVL equation for the main loop with SiC MOSFETs in constant current region is determined according to:
Wherein L d is drain parasitic inductance, L s is common source parasitic inductance, i d is drain current, V ds is drain-source voltage, For parasitic capacitance voltage, R pl is the main loop equivalent parasitic resistance, and V dc is the supply voltage.
According to some embodiments, taking SiC MOSFETQH as an example when the parasitic parameter model of QH is in the constant current region, as shown in fig. 5, where the dotted line represents the current flow path, QH is the SiC MOSFET of the upper half bridge, R g is the sum of the gate resistance and the internal resistance of the QH gate, R pl is the main loop equivalent parasitic resistance, C gs is the gate-source capacitance, C gd is the gate-drain capacitance, C ds is the drain-source capacitance, C p is the parasitic capacitance, L d is the drain parasitic inductance, L is the load inductance, L s is the common source parasitic inductance, V gs is the gate voltage, and V dc is the supply voltage. Determining a KCL equation of the drain electrode based on kirchhoff current law according to the current flow path; based on kirchhoff's voltage law, the KVL equation for the main loop is determined.
In some embodiments, the switching frequency of the SiC MOSFET is higher due to the larger load inductance, and thus the load current i l remains substantially unchanged. The following second order differential equation is thus determined from the KCL equation of the drain and the KVL equation of the main loop:
Wherein, V ds is the drain-source voltage for the current change rate at which the drain current reaches the load current time C p; as can be seen from the second order differential equation, the on-current oscillation is caused by L d、Ls and C p, and the peak amplitude of the on-current oscillation is determined by the initial state of C p, that is, the current change rate at which the drain current reaches the load current time C p.
In an embodiment of the present application, determining the waveform of the auxiliary signal based on the circuit equation includes:
Based on a circuit equation, determining that the waveform of the auxiliary signal is at a high level in the preset time when the SiC MOSFET enters the constant current region according to the relation between the grid voltage and the drain current when the SiC MOSFET is in the constant current region.
According to some embodiments, the peak amplitude of the on-current oscillation is determined according to:
ip＝il+irr-max
Wherein i p is peak amplitude of the on current oscillation, i l is load current, and i rr-max is overshoot current generated due to parasitic capacitance;
The current change rate of the overshoot current, i.e. the current change rate at which the drain current reaches the load current moment C p, is determined according to:
wherein, the relation between the gate voltage and the drain current of the SiC MOSFET in the constant current area is determined according to the following formula:
id(t)＝gfs(Vgs(t)-Vth)
Wherein g fs is the gate-source drive current, V gs is the gate-source voltage, i.e., the gate voltage, V th is the threshold voltage;
Determining the relationship between the drain current change rate and the gate voltage change rate according to the relationship between the gate voltage and the drain current:
According to the relation between the drain current change rate and the gate voltage change rate, it can be obtained that when the auxiliary triode in the auxiliary circuit is turned on within the preset time when the SiC MOSFET enters the constant current region, the drive current can be split, so that the rising rate of the gate voltage and the rising rate of the drain current are slowed down, the peak amplitude of the turn-on current oscillation is further reduced, and the turn-on current oscillation is further suppressed.
In the embodiment of the application, the temperature-resistant SiC MOSFET driving circuit capable of suppressing the on-current oscillation is controlled based on the auxiliary signal and the control signal, and a typical waveform of the driving circuit is shown in fig. 6, wherein a solid line is a waveform of a conventional driving circuit, and a dotted line is a waveform of the circuit provided by the embodiment of the application. The method specifically comprises the following four stages:
The temperature-resistant SiC MOSFET driving circuit capable of inhibiting the on-current oscillation is controlled to be in a first stage, namely t1-t2, wherein a control driving signal V PWM jumps to a high level, an auxiliary signal V ctrl keeps a low level, so that the grid voltage V gs of the SiC MOSFET gradually rises from a negative power supply voltage to a threshold voltage V th, the drain-source voltage V ds of the SiC MOSFET is a power supply voltage V dc, and the drain current i d of the SiC MOSFET is 0;
The temperature-resistant SiC MOSFET driving circuit capable of inhibiting the on-current oscillation is controlled to be in a second stage, namely t2-t3, wherein a driving signal V PWM is controlled to be kept at a high level, so that the grid voltage V gs of the SiC MOSFET gradually rises to a Miller platform voltage from a threshold voltage V th, the drain-source voltage V ds of the SiC MOSFET keeps a power supply voltage V dc, and the drain current i d of the SiC MOSFET gradually rises; before the drain current rises to the load current, the control auxiliary signal V ctrl jumps to a high level, so that the rising speed of the drain current is slowed down;
The temperature-resistant SiC MOSFET driving circuit capable of inhibiting the on-current oscillation is controlled to be in a third stage, namely t3-t4, wherein the driving signal V PWM is controlled to be kept at a high level, the auxiliary signal V ctrl jumps to be at a low level, so that the grid voltage V gs of the SiC MOSFET is kept at a miller platform voltage, the drain-source voltage V ds of the SiC MOSFET gradually drops to a conducting voltage V ds_on, and the drain current i d of the SiC MOSFET gradually drops back to the magnitude of a load current i l after rising to the top point;
The temperature-resistant SiC MOSFET driving circuit capable of inhibiting the on-current oscillation is controlled to be in a fourth stage, namely t4-t5, wherein the driving signal V PWM is controlled to be kept at a high level, the auxiliary signal V ctrl is controlled to be kept at a low level, so that the grid voltage V gs of the SiC MOSFET is gradually increased to a positive power supply voltage, the drain-source voltage V ds of the SiC MOSFET is kept at an on voltage, and the drain current i d of the SiC MOSFET is kept at a load current.
According to some embodiments, as shown in fig. 7, the current flow path of the first stage of the above half-bridge is exemplified by SiC MOSFETQH, wherein the control driving signal V PWM jumps to a high level, the positive power supply voltage VDD is supplied, the gate-source capacitor C gs is charged through the gate driving resistor Rg1, so that the gate voltage V gs gradually rises from the negative power supply voltage VSS to the threshold voltage V th, but QH is not yet turned on, so that the drain-source voltage V ds is the power supply voltage V dc, the drain current i d is 0, the QH operates in the off region, and the period of time t1-t2 is the turn-on delay time t d(on) of the QH.
In the second stage, the gate voltage V gs continues to rise from V th, and the drain current gradually increases. Before the drain current rises to the load current, the auxiliary signal V ctrl jumps to a high level, controlling the auxiliary triode QT to turn on. The current flow path is shown in fig. 8, in which the positive power supply voltage VDD continues to supply power, the auxiliary signal V ctrl has jumped to a high level, the base current is supplied to the auxiliary triode QT, the collector current is generated accordingly, the driving current from the positive power supply voltage is shunted, part of the current still flows to the gate-source capacitor C gs, the gate voltage V gs continues to rise to the miller plateau voltage, but the rising rate is slower than the conventional driving, the drain-source voltage V ds keeps the power supply voltage V dc, and the drain current i d of the SiC MOSFET gradually rises to a steady state value. Since the drain current change rate becomes gentle with the gate voltage change rate, the current stress at the time of turn-on is reduced, and thus the turn-on current oscillation is reduced.
The current flow path in the third stage is shown in fig. 9, in which the auxiliary signal V ctrl jumps to a low level, and controls the auxiliary triode QT to turn off. Because of the gate-drain capacitance C gd, the drive current charges C gd back through the gate drive resistor Rg1, causing the drain-source voltage V ds to drop while the gate voltage V gs remains at the miller plateau voltage.
The current flow path in the fourth stage is shown in fig. 10, in which the gate voltage V gs gradually increases to the positive power supply voltage, and QH enters the fully-on region from the constant current region in the fourth stage.
According to some embodiments, in the second phase, since the auxiliary signal controls the auxiliary transistor in the auxiliary control circuit to be turned on, the gate circuit is pulled down, and the auxiliary circuit shunts the gate driving current, the gate driving current is reduced, the rate of rise of the gate voltage is reduced, the rate of rise of the drain current of the SiC MOSFET is slowed down, the turn-on current spike is reduced, and the oscillation amplitude is reduced.
In the embodiment of the application, before the temperature-resistant SiC MOSFET driving circuit capable of inhibiting the oscillation of the on current is controlled based on the auxiliary signal and the control signal, the temperature-resistant SiC MOSFET driving circuit further comprises:
Determining parameters of a temperature-resistant SiC MOSFET driving circuit capable of inhibiting on-current oscillation;
the parameters include the resistance of the gate output circuit, the resistance of the base resistor and the resistance of the collector resistor.
According to some embodiments, adjusting the resistance value of the gate output circuit may change the switching speed of the SiC MOSFET, including the drain current rise speed. The larger the resistance value of the grid output circuit is, the smaller the current, voltage overshoot and oscillation are, the slower the switching speed of the SiC MOSFET is, and the larger the switching loss is.
In some embodiments, adjusting the resistance of the base resistor may change the shunt size of the auxiliary control circuit to the driving current, thereby changing the driving voltage rising rate of change, equivalently changing the drain current rising rate of change. The larger the resistance of the base resistor is, the smaller the base current is, the smaller the collector current of the auxiliary triode is, the worse the shunt effect is, and the less obvious the effect of changing the change rate of the grid voltage is. The resistance of the base resistor is larger than the corresponding resistance when the auxiliary triode is in limiting current.
In some embodiments, since the auxiliary transistor is turned on to shunt the driving current, there is a current flowing through the auxiliary transistor, resulting in a voltage drop, the gate voltage can be clamped, and the rate of change of the gate voltage can be changed by adjusting the resistance of the collector resistor.
In some embodiments, other components in the temperature resistant SiC MOSFET drive circuit select elements with high stability. The capacitor may be, for example, of the type X7R, and the transistor may be, for example, BCX54Z, which is resistant to temperatures of 150 ℃.
In the embodiment of the application, the method for determining the parameters of the temperature-resistant SiC MOSFET driving circuit capable of inhibiting the oscillation of the opening current comprises the following steps:
The resistance value of the gate output circuit is determined according to the following:
/>
wherein R g2 is the resistance value of the grid output circuit, VDD is the positive power supply voltage, VSS is the negative power supply voltage, and i p is the driving current peak value of the push-pull amplifying circuit;
the resistance of the base resistor is determined according to the following formula:
Wherein R b1 is the resistance of the base resistor, For controlling the voltage value of the signal,/>For the voltage value between the time base stage and the emitting stage of the auxiliary triode, i BM is the base current peak value of the auxiliary triode;
The resistance of the collector resistance is determined according to the following formula:
Wherein R C1 is the resistance of the collector resistor, V gs is the gate voltage, VDD is the positive supply voltage, VSS is the negative supply voltage, R g1 is the resistance of the gate output circuit, and V ce is the collector-emitter voltage.
According to some embodiments, when the driving voltage waveform generation circuit is a high temperature driver, the average value of the switch driving current is 1.5A, the peak value of the switch driving current is 12A, the positive power supply voltage is 20V, and the negative power supply voltage is-5V. In the switching process of the SiC MOSFET, the driving current cannot exceed the driving capability of the high-temperature driver, and therefore, the resistance value of the grid output circuit is set
According to some embodiments, when the auxiliary triode model is BCX54Z, the base current peak value is 200mA, and the auxiliary triode is at a high temperature of 100 DEG CAbout 0.5V, considering an environment of 120 ℃/>With 0.4V and the peak base current that is tolerated at high temperatures drops, a certain margin needs to be considered. Therefore, the resistance value/>, of the base resistor is set
In some embodiments, when the base current estimation is adopted, since the auxiliary triode is in a saturated state, and the ratio of the collector current to the base current is not equal to the current amplification factor, in practice, the auxiliary triode is made to work in an amplification state to control the shunt value of the auxiliary control circuit by controlling the base current more conveniently, so the resistance value of the base resistor can be selected in hundred kilo-ohm level, and the auxiliary triode is made to work in the amplification state without exceeding the base resistor bearing capacity of the triode.
For example, in a scenario where the second stage auxiliary circuit is split, the equivalent circuit of SiC MOSFETQH of the upper half-bridge and the auxiliary transistor is shown in fig. 11. Wherein r on is QH saturated equivalent resistance, the resistance is very small, βi b is collector current of the auxiliary triode, βi b does not exceed collector current bearing capacity i CM (about 1.5A), r c is collector equivalent resistance of the auxiliary triode, C eq is equivalent capacitance of an external passive device and power tube input capacitance, about hundred nF level, and the parallel external resistor of C eq in the original circuit is in hundreds kiloohm level, and the external resistor has larger resistance, so that the equivalent circuit is opened. At time t2, the gate voltage may be approximated according to the following equation:
In the embodiment of the application, V ce is 2V which is a voltage greater than that in a saturated state, VSS is-5V, VDD is 20V, R g1 is 10Ω, V g is a threshold voltage V th (about 2.5V at normal temperature and reduced at high temperature, and 1.5V at 120 ℃ is estimated), and finally, R C1 can be about 4.8Ω at normal temperature and about 4Ω at high temperature. In conclusion, the value range of R C1 is determined to be 3.5-5.5Ω.
In summary, according to the method provided by the embodiment of the application, the circuit equation of the SiC MOSFET in the constant current region is determined based on the kirchhoff current law and the kirchhoff voltage law; determining a waveform of the auxiliary signal based on the circuit equation; a temperature-resistant SiC MOSFET driving circuit capable of suppressing on-current oscillation is controlled based on an auxiliary signal and a control signal. The application can maintain the performance advantage of the SiC MOSFET while achieving a strong inhibition effect on the on-current oscillation.
It should be noted that in the description of the present application, the terms "first," "second," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance. Furthermore, in the description of the present application, unless otherwise indicated, the meaning of "a plurality" is two or more.
Any process or method descriptions in flow charts or otherwise described herein may be understood as representing modules, segments, or portions of code which include one or more executable instructions for implementing specific logical functions or steps of the process, and further implementations are included within the scope of the preferred embodiment of the present application in which functions may be executed out of order from that shown or discussed, including substantially concurrently or in reverse order, depending on the functionality involved, as would be understood by those reasonably skilled in the art of the present application.
It is to be understood that portions of the present application may be implemented in hardware, software, firmware, or a combination thereof. In the above-described embodiments, the various steps or methods may be implemented in software or firmware stored in a memory and executed by a suitable instruction execution system. For example, if implemented in hardware, as in another embodiment, may be implemented using any one or combination of the following techniques, as is well known in the art: discrete logic circuits having logic gates for implementing logic functions on data signals, application specific integrated circuits having suitable combinational logic gates, programmable Gate Arrays (PGAs), field Programmable Gate Arrays (FPGAs), and the like.
Those of ordinary skill in the art will appreciate that all or a portion of the steps carried out in the method of the above-described embodiments may be implemented by a program to instruct related hardware, where the program may be stored in a computer readable storage medium, and where the program, when executed, includes one or a combination of the steps of the method embodiments.
In addition, each functional unit in the embodiments of the present application may be integrated in one processing module, or each unit may exist alone physically, or two or more units may be integrated in one module. The integrated modules may be implemented in hardware or in software functional modules. The integrated modules may also be stored in a computer readable storage medium if implemented in the form of software functional modules and sold or used as a stand-alone product.
The above-mentioned storage medium may be a read-only memory, a magnetic disk or an optical disk, or the like.
In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present application. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
While embodiments of the present application have been shown and described above, it will be understood that the above embodiments are illustrative and not to be construed as limiting the application, and that variations, modifications, alternatives and variations may be made to the above embodiments by one of ordinary skill in the art within the scope of the application.
Claims (4)
1. A temperature resistant SiC MOSFET drive circuit capable of suppressing on-current oscillations, said circuit comprising:
The input end of the isolation input circuit receives a PWM driving signal and an auxiliary circuit control signal and is used for isolating the PWM driving signal and the auxiliary circuit control signal;
The input end of the push-pull amplifying circuit is connected with the output end of the isolation input circuit and is used for receiving the isolated PWM driving signal and converting the isolated PWM driving signal into a driving waveform signal corresponding to the driving voltage of the SiC MOSFET;
The input end of the grid output circuit is connected with the output end of the push-pull amplifying circuit, and the output end of the grid output circuit is connected with the grid of the SiC MOSFET and is used for converting the driving waveform signal into a grid driving signal so as to finish driving the SiC MOSFET;
The input end of the auxiliary control circuit is connected with the output end of the isolation input circuit, and the output end of the auxiliary control circuit is connected with the grid electrode of the SiC MOSFET and is used for controlling the opening process of the SiC MOSFET based on the isolated auxiliary signal so as to complete the inhibition of the oscillation of the open current;
The control method of the temperature-resistant SiC MOSFET driving circuit capable of inhibiting the oscillation of the on current comprises the following steps: determining a circuit equation of the SiC MOSFET in the constant current region based on the kirchhoff current law and the kirchhoff voltage law; determining a waveform of the auxiliary signal based on the circuit equation; controlling the temperature-resistant SiC MOSFET driving circuit capable of inhibiting the oscillation of the on current based on the auxiliary signal and the control signal;
The circuit equation for determining that the SiC MOSFET is in the constant current region based on the kirchhoff current law and the kirchhoff voltage law comprises: based on kirchhoff's current law, the KCL equation for the drain of the SiC MOSFET in the constant current region is determined according to:
Wherein, Is drain current,/>For load current,/>Is parasitic capacitance current;
Based on kirchhoff's voltage law, the KVL equation for the main loop with SiC MOSFETs in constant current region is determined according to:
Wherein, Is drain parasitic inductance,/>Is parasitic inductance of common source,/>Is drain current,/>Is drain-source voltage,/>For parasitic capacitance voltage,/>Is the equivalent parasitic resistance of the main loop,/>Is the power supply voltage;
The determining the waveform of the auxiliary signal based on the circuit equation includes: based on the circuit equation, determining that the waveform of the auxiliary signal is high level in the preset time when the SiC MOSFET enters the constant current area according to the relation between the grid voltage and the drain current when the SiC MOSFET is in the constant current area;
The temperature-resistant SiC MOSFET driving circuit capable of inhibiting the oscillation of the on current is controlled based on the auxiliary signal and the control signal, and comprises: controlling the temperature-resistant SiC MOSFET driving circuit capable of inhibiting the on-current oscillation to be in a first stage, wherein the driving signal is controlled to jump to a high level, and the auxiliary signal is kept at a low level, so that the grid voltage of the SiC MOSFET gradually rises from a negative power supply voltage to a threshold voltage, the drain-source voltage of the SiC MOSFET is the power supply voltage, and the drain current of the SiC MOSFET is 0; controlling the temperature-resistant SiC MOSFET driving circuit capable of inhibiting the on-current oscillation to be in a second stage, wherein the driving signal is controlled to be kept at a high level, so that the grid voltage of the SiC MOSFET is gradually increased from a threshold voltage to a Miller platform voltage, the drain-source voltage of the SiC MOSFET is kept at a power supply voltage, and the drain current of the SiC MOSFET is gradually increased; before the drain current rises to the load current, controlling the auxiliary signal to jump to a high level, so as to slow down the rising rate of the drain current; controlling the temperature-resistant SiC MOSFET driving circuit capable of inhibiting the on-current oscillation to be in a third stage, wherein the driving signal is controlled to be kept at a high level, and the auxiliary signal jumps to be at a low level, so that the grid voltage of the SiC MOSFET is kept at a miller platform voltage, the drain-source voltage of the SiC MOSFET is gradually reduced to a conducting voltage, and the drain current of the SiC MOSFET gradually falls back to the magnitude of a load current after rising to a peak; controlling the temperature-resistant SiC MOSFET driving circuit capable of inhibiting the on-current oscillation to be in a fourth stage, wherein the driving signal is controlled to be kept at a high level, and the auxiliary signal is controlled to be kept at a low level, so that the grid voltage of the SiC MOSFET gradually rises to a positive power supply voltage, the drain-source voltage of the SiC MOSFET is kept at a conducting voltage, and the drain current of the SiC MOSFET is kept at a load current;
Before the control of the temperature-resistant SiC MOSFET driving circuit capable of suppressing on-current oscillation based on the auxiliary signal and the control signal, further includes: determining parameters of the temperature-resistant SiC MOSFET driving circuit capable of inhibiting the oscillation of the opening current; the parameters comprise the resistance value of a grid electrode output circuit, the resistance value of a base electrode resistor and the resistance value of a collector electrode resistor;
The determining the parameters of the temperature-resistant SiC MOSFET driving circuit capable of inhibiting the oscillation of the on current comprises the following steps: determining a resistance value of the gate output circuit according to:
Wherein, For the resistance value of the grid output circuit,/>Is a positive power supply voltage,/>For negative supply voltage,/>A drive current peak value for the push-pull amplifying circuit;
Determining the resistance of the base resistor according to the following formula:
Wherein, Is the resistance value of the base resistor,/>For controlling the voltage value of the signal,/>For assisting the voltage value between the time base stage and the transmitting stage of the triode conduction,/>The base current peak value of the auxiliary triode;
the resistance of the collector resistor is determined according to the following formula:
Wherein, Is the resistance of the collector resistor,/>Is the gate voltage value,/>Is a positive power supply voltage,/>For negative supply voltage,/>For the resistance value of the grid output circuit,/>Is the collector-emitter voltage value.
2. The circuit of claim 1, wherein the push-pull amplifying circuit comprises a PNP transistor and an NPN transistor;
the base electrode of the PNP transistor and the base electrode of the NPN transistor receive the driving signal;
The collector of the NPN transistor is connected with a positive power supply, and the collector of the PNP transistor is connected with a negative power supply;
The emitter of the PNP transistor is connected with the emitter of the NPN transistor;
and the emitter of the PNP transistor and the emitter of the NPN transistor are output ends of the push-pull amplifying circuit.
3. The circuit of claim 1, wherein the auxiliary control circuit comprises a base resistor, a collector resistor, and an auxiliary transistor;
One end of the base resistor is used for receiving an auxiliary signal; the base electrode of the auxiliary triode is connected with the other end of the base resistor, the emitter electrode of the auxiliary triode is connected with a negative power supply, and the collector electrode of the auxiliary triode is connected with one end of the collector resistor; and the other end of the collector resistor is connected with the grid electrode of the SiC MOSFET.
4. The circuit of claim 1, wherein all components in the temperature-resistant SiC MOSFET drive circuit that can suppress on-current oscillations are Gao Wenyuan-resistant components;
the push-pull amplifying circuit is integrated on a chip based on SOI technology.
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003339152A (en) * | 2002-05-22 | 2003-11-28 | Mitsubishi Electric Corp | Gate drive circuit of voltage drive type semiconductor element |
| JP2013005474A (en) * | 2011-06-13 | 2013-01-07 | Honda Motor Co Ltd | Power supply circuit |
| CN107342756A (en) * | 2017-08-16 | 2017-11-10 | 重庆大学 | A kind of improvement gate-drive device of suppression SiC MOSFET bridge arm crosstalks |
| CN108988617A (en) * | 2018-08-22 | 2018-12-11 | 哈尔滨工业大学 | A kind of driving circuit and circuits improvement method of active suppression SiC MOSFET crosstalk phenomenon |
| CN110212740A (en) * | 2019-05-15 | 2019-09-06 | 中国矿业大学 | A kind of driving circuit inhibiting the crosstalk of SiC MOSFET gate pole and oscillation |
| CN111211762A (en) * | 2020-02-19 | 2020-05-29 | 湖南大学 | SiC MOSFET drive circuit with high turn-on performance |
| CN113872420A (en) * | 2021-09-23 | 2021-12-31 | 上海电机学院 | Improved gate drive circuit for inhibiting bridge arm crosstalk of SiC-MOSFET (silicon carbide-metal oxide semiconductor field effect transistor) |
-
2022
- 2022-02-15 CN CN202210138597.0A patent/CN114640328B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003339152A (en) * | 2002-05-22 | 2003-11-28 | Mitsubishi Electric Corp | Gate drive circuit of voltage drive type semiconductor element |
| JP2013005474A (en) * | 2011-06-13 | 2013-01-07 | Honda Motor Co Ltd | Power supply circuit |
| CN107342756A (en) * | 2017-08-16 | 2017-11-10 | 重庆大学 | A kind of improvement gate-drive device of suppression SiC MOSFET bridge arm crosstalks |
| CN108988617A (en) * | 2018-08-22 | 2018-12-11 | 哈尔滨工业大学 | A kind of driving circuit and circuits improvement method of active suppression SiC MOSFET crosstalk phenomenon |
| CN110212740A (en) * | 2019-05-15 | 2019-09-06 | 中国矿业大学 | A kind of driving circuit inhibiting the crosstalk of SiC MOSFET gate pole and oscillation |
| CN111211762A (en) * | 2020-02-19 | 2020-05-29 | 湖南大学 | SiC MOSFET drive circuit with high turn-on performance |
| CN113872420A (en) * | 2021-09-23 | 2021-12-31 | 上海电机学院 | Improved gate drive circuit for inhibiting bridge arm crosstalk of SiC-MOSFET (silicon carbide-metal oxide semiconductor field effect transistor) |
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