CN107342756A - A kind of improvement gate-drive device of suppression SiC MOSFET bridge arm crosstalks - Google Patents
A kind of improvement gate-drive device of suppression SiC MOSFET bridge arm crosstalks Download PDFInfo
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- CN107342756A CN107342756A CN201710703079.8A CN201710703079A CN107342756A CN 107342756 A CN107342756 A CN 107342756A CN 201710703079 A CN201710703079 A CN 201710703079A CN 107342756 A CN107342756 A CN 107342756A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
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Abstract
The present invention relates to a kind of improvement gate-drive device of suppression SiC MOSFET bridge arm crosstalks, belong to SiC actuation techniques field.The device includes main drive circuit and passive auxiliary circuit, and main driving circuit section is made up of DC DC power converter cells, light-coupled isolation chip unit, driving chip unit, driving resistance unit；Passive auxiliary circuit part suppresses unit by peak forward voltage and negative peak voltage suppresses unit and formed.The present invention proposes one kind on the basis of conventional driving circuit, increases the new auxiliary circuits improvement driving method of triode series capacitance.By the rational design to main drive circuit and passive auxiliary circuit parameter, shorten the switch time delay time while realizing and suppress bridge arm crosstalk, reduce switching loss, reduce the target of control complexity.Device provided by the invention, SiC MOSFET bridges formula converter functional reliability and efficiency are improved, reduces drive control cost and complexity.
Description
Technical field
The invention belongs to SiC MOSFET to drive design field, is related to a kind of suppression SiC MOSFET bridge arm crosstalks
Improve gate-drive device.
Background technology
In recent years, with carborundum (Silicon Carbide, SiC) MOSFET be representative wide band gap semiconductor device because
It has the excellent physical characteristic such as high switching frequency, high switching speed, high breakdown field strength, high heat conductance, becomes high frequency, height
Temperature, the ideal component selection of high power density driving.But in bridge converter, SiC MOSFET high switching speed characteristic
While improving switching frequency, reducing switching loss, shortening dead time, influenceed by device parasitic parameter, bridge can be produced
The quick-speed turning on-off of a device causes the crosstalk phenomenon of another complementary therewith device gate source voltage oscillation in formula circuit.Due to
SiCMOSFET forward directions threshold voltage and maximum shut-off negative pressure are smaller, and gate source voltage vibration may cause device to mislead and cause
Short circuit, or damage device more than negative pressure maximum.Therefore, the crosstalk phenomenon in bridge circuit how is suppressed to improving converter
Functional reliability, extension SiC MOSFET element service lifes are significant.At present, conventional increase driving resistance with simultaneously
Join electric capacity suppressing method, extend the switch time delay time, increase switching loss；And driven by monitoring Miller plateau to control
The suppressing method of impedance,motional, acquired a certain degree of difficulty in terms of accurate measurements switch status；The suppressing method turned off using negative pressure,
Negative pressure allowance is reduced, easily causes negative pressure to cross limit；And use the suppressing method of active clamp to need outer increase control signal, increase
Control cost and complexity.Therefore, the switch time delay time is not being extended, before not increasing switching loss and control complexity
Put on, be badly in need of a kind of simple and effective suppressing method, to solve existing bridge arm cross-interference issue during SiC MOSFET drivings.
The content of the invention
It is an object of the invention to provide a kind of improvement gate-drive device of suppression SiC MOSFET bridge arm crosstalks, not
To sacrifice the delay of SiC switch mosfets, on the premise of switching loss or increase control complexity as cost, reach effective suppression
Crosstalk phenomenon during SiC MOSFET drivings processed, improves SiC MOSFET bridges formula converter functional reliability and operating efficiency
Purpose.
To reach above-mentioned purpose, the present invention provides following technical scheme：
A kind of improvement gate-drive device of suppression SiC MOSFET bridge arm crosstalks, includes main drive circuit and passive auxiliary
Circuit, the main drive circuit are connected with the SiC MOSFET elements；The passive auxiliary circuit and the main drive circuit
Connection；The quantity of the main drive circuit is 2, for realizing the disjunction of SiC MOSFET elements described in main circuit upper and lower bridge arm
Function, the quantity of the passive auxiliary circuit is 2, for suppressing to drive SiC described in the main circuit upper and lower bridge arm
Caused bridge arm crosstalk during MOSFET element.
Further, the main drive circuit specifically includes DC-DC converter unit, light-coupled isolation chip unit, drives core
Blade unit, drive resistance unit；The DC-DC converter unit includes RP12-09D converters and RP12-05S converters, institute
The cathode output end for stating RP12-09D converters is connected with the cathode output end of the RP12-05S converters, the RP12-05S
The cathode output end of converter is also connected with the passive auxiliary circuit, and input power is by the DC-DC converter unit
The main drive circuitry；The light-coupled isolation chip unit is used to realize isolating for control signal and drive signal, described
Light-coupled isolation chip unit also includes the input for being used for receiving control signal；The output end of the driving chip unit and driving
One end connection of resistance unit, the driving chip unit are used for driving voltage and the driving for exporting the SiC MOSFET elements
Electric current；The other end of the driving resistance unit is connected with the SiC MOSFET elements gate pole, and the driving resistance unit is used
In the switching speed for adjusting the SiC MOSFET elements.
Further, the passive auxiliary circuit suppresses unit by peak forward voltage and negative peak voltage suppresses unit group
Into, the passive auxiliary circuit is divided into the passive auxiliary circuit of bridge arm and the lower passive auxiliary circuit of bridge arm, respectively with it is described up and down
The main drive circuit connection of bridge arm；
The peak forward voltage suppresses unit and includes NPN triode, diode, auxiliary capacitor I and auxiliary resistance I, institute
The base stage for stating NPN triode is connected with one end of the auxiliary resistance I, and the other end and the DC-DC of the auxiliary resistance I become
The RP12-05S converters cathode output end connection of exchange unit, the colelctor electrode of the NPN triode and the auxiliary capacitor I
One end connects, the RP12-05S converter cathode output ends of the other end of the auxiliary capacitor I and the DC-DC converter unit
Connection, the emitter stage of the NPN triode are connected with the positive pole of the diode；
The negative peak voltage suppresses unit and includes PNP triode, auxiliary capacitor II, auxiliary resistance II, the auxiliary
One end of resistance II is connected with the output end of the driving chip unit, and the other end is connected with the base stage of the PNP triode, institute
The colelctor electrode for stating PNP triode is connected with one end of the auxiliary capacitor II, the other end and the DC- of the auxiliary capacitor II
The RP12-05S converters cathode output end connection of DC power converter cells；The emitter stage of the PNP triode and the diode
Negative pole connection after be connected to the SiC MOSFET elements gate pole；
The peak forward voltage suppresses unit, the peak forward voltage for suppressor grid vibration；
The negative peak voltage suppresses unit, the negative voltage peak value for suppressor grid vibration.
Further：
Moment is turned in bridge arm SiC MOSFET elements, the driving of complementary another bridge arm is resistor satisfied therewith：
In bridge arm SiC MOSFET element shutdown moments, the driving of complementary another bridge arm is resistor satisfied therewith：
V in formulaCgsFor gate-source capacitance voltage, V2For the shut-off negative pressure amplitude of SiC MOSFET elements, RgTo drive resistance, R
=Rg+Rg(in), wherein Rg(in)For the internal resistance of SiC MOSFET elements.
Further, the auxiliary capacitor meets：
V in formulaDCFor DC input voitage, CgdFor the gate leakage capacitance of SiC MOSFET elements, C is auxiliary capacitor, A=C+
Ciss, wherein Ciss=Cgs+Cgd, CgsFor the gate-source capacitance of SiC MOSFET elements, a is the switching rate of SiC MOSFET elements.
The beneficial effects of the present invention are：The present invention suppresses triode in unit based on the positive negative sense voltage oscillation of control and opened
It is disconnected, reduce the thought of switching moments driving impedance, it is proposed that one kind is on the basis of conventional driving circuit, increase triode series connection
The novel passive auxiliary circuit of electric capacity improves driving method.By being set to main drive circuit and the reasonable of passive auxiliary circuit parameter
Meter, to sacrifice the delay of SiC switch mosfets, switching loss or increase controls complexity to suppress on the premise of cost
Bridge arm crosstalk.Described device is advantageous to improve SiC MOSFET bridges formula converter operating efficiency and functional reliability.
Brief description of the drawings
In order that the purpose of the present invention, technical scheme and beneficial effect are clearer, the present invention provides drawings described below and carried out
Explanation：
Fig. 1 is the improvement gate-drive apparatus structure schematic diagram for suppressing SiC MOSFET bridge arm crosstalks in the application；
Fig. 2 is voltage and current waveform during bridge arm driving；
Fig. 3 is that the improvement of the present invention suppresses the fundamental diagram of bridge arm crosstalk drive device；
The improvement that Fig. 4 is the present invention suppresses equivalent circuit simplification of the bridge arm crosstalk drive device when auxiliary circuit does not work
Figure；
Fig. 5 is the driving resistance value scope schematic diagram of the present invention；
The improvement that Fig. 6 is the present invention suppresses equivalent circuit simplification of the bridge arm crosstalk drive device when auxiliary circuit works
Figure；
Fig. 7 is the auxiliary capacitor span schematic diagram of the present invention；
Fig. 8, Fig. 9 are the drive device simulation comparison oscillogram in the application；
Figure 10, Figure 11, Figure 12 are that the drive device in the application is negative in different driving resistance, different input voltages, difference
Carry the contrast effect figure under current condition.
Embodiment
Below in conjunction with accompanying drawing, the preferred embodiments of the present invention are described in detail.
Fig. 1 is the gate-drive apparatus structure schematic diagram of the suppression SiC MOSFET bridge arm crosstalks of the present invention；The device bag
Containing the main drive circuits of SiCMOSFET and passive auxiliary circuit, wherein：
The main drive circuits of SiC MOSFET are used for the function of realizing that driving SiC MOSFET elements are cut-off；Main drive circuit tool
Body includes：DC-DC converter unit, for main drive circuitry；Light-coupled isolation chip unit, for realize control signal with
The isolation of drive signal, improve main drive circuit antijamming capability；Driving chip unit, for output driving SiC MOSFET devices
Driving voltage and driving current needed for part；Resistance unit is driven, SiC MOSFET element switching speeds are driven for adjusting.
Passive auxiliary circuit is used to suppress caused bridge arm crosstalk phenomenon during SiC MOSFET drive；Passive auxiliary electricity
Road specifically includes：Peak forward voltage suppresses unit, the peak forward voltage for suppressor grid vibration；Negative peak voltage presses down
Unit processed, the negative voltage peak value for suppressor grid vibration.
Exemplified by above bridge arm SiC MOSFET element switching moments cause lower bridge arm grid vibration, bridge arm of the present invention drove
Voltage current waveform refers to Fig. 2 and Fig. 3 with improving suppression crosstalk driving working principle of design figure in journey, is specially：
t0~t1Stage：QHDrive signal is high level, vgsHFrom negative pressure VGS(off)Rise to threshold voltage VGS(th), herein
During, vdsHWith idsHKeep constant, QLBody diode DbLAfterflow, QLIn cut-off state, passive auxiliary circuit does not work.
t1~t2Stage：vgsHMore than threshold voltage VGS(th), vdsHBegin to decline, idsHLinear increase, while idsLReversely subtract
It is small, QHWith QLStart the change of current.
t2~t3Stage：vdsHIt is rapid to decline, vdsLIt is rapid to rise, lower bridge arm QLMiller capacitance CgdLStart to charge up, charge
Miller electric current in QLNegative sense pressure drop is produced in grid impedance, makes the triode P in auxiliary circuit2LEmitter stage positively biased, P1LTransmitting
It is extremely reverse-biased, diode D1LIt is reverse-biased, P2LIt is open-minded, P1LShut-off, charging current pass through auxiliary capacitor C2LShunting, the sense of current such as Fig. 3
(b) shown in the arrow in, QLGrid impedance reduces, it is suppressed that QLGrid forward direction peak value；Upper bridge arm QHGrid impedance voltage is just
It is worth, the triode P in auxiliary circuit1H、P2HEmitter stage is reverse-biased, diode D1HIt is reverse-biased, P1H、P2HShut-off, C1H、C2HWith QHGate pole breaks
Connection is opened, driving current is not passed through auxiliary capacitor C1H、C2H, so as to not increase QHOpen delay time and turn-on consumption.
t3~t4Stage：vgsHGiven driving voltage V is continued to rise to from Miller platformGS(on), until QHInto fully on
State.
t5~t6Stage：QHDrive signal is low level, vgsHDrop to Miller voltage Vmiller, QHIt is held on, vdsHWith
idsHKeep constant, auxiliary circuit does not work.
t6~t7Stage：vgsHMaintain Miller voltage VmllierIt is constant, vdsHIt is rapid to rise, vdsLIt is rapid to decline, QLMiller electricity
Hold CgdLStart to discharge, the Miller electric current of electric discharge produces forward voltage drop in grid impedance, makes the diode D in auxiliary circuit1LJust
Partially, triode P1LEmitter stage positively biased, P2LEmitter stage is reverse-biased, P1LIt is open-minded, P2LShut-off, discharge current pass through C1LShunting, electric current side
To as shown in the arrow in Fig. 3 (e), QLGrid impedance reduces, it is suppressed that QLGrid negative peak；Upper bridge arm QHGrid impedance electricity
Press as negative value, the triode P in auxiliary circuit2LEmitter stage positively biased, P1LEmitter stage is reverse-biased, diode D1LIt is reverse-biased, P2LIt is open-minded, P1L
Shut-off, CgsHGate-source capacitance discharge current passes through C2LShunting, reduces shut-off impedance, reduces QHTurn off delay time and shut-off
Loss.
t7~t8Stage：vgsHFrom Miller voltage VmllierDecline, DLBegin to turn on, QHWith QLStart the change of current.
t8~t9Stage：vgsHContinue to drop to given driving voltage VGS(off), until QHInto the state that complete switches off, DLIt is continuous
Stream.
Assuming that lower bridge arm SiC MOSFET elements QLNegative pressure shut-off voltage is V2L, upper bridge arm QHSwitching moments cause QLProduce
Crosstalk phenomenon.When the passive auxiliary circuit in the present invention does not work, ignore the influence of stray inductance, then in QHSwitching moments QL
Equivalent simplified circuit it is as shown in Figure 4.V in figureinThe equivalent upper bridge arm Q of voltage sourceHSwitching moments are to lower bridge arm QLInfluence, Vin=
At, a QHSwitching speed, it is assumed that a absolute value is constant, V2LVoltage source amplitude is 5V.
Node G nodal voltage equation can be obtained by Kirchhoff's law：
Solution formula (1) can obtain gate-source capacitance voltage vCgsLExpression formula is：
Wherein R=RgL+RgL(in), Ciss=CgsL+CgdL, in QHAt the end of switching moments, t=VDC/ a, and bring formula (2) into can
：
Drive resistance RgLSelection should meet in QHIn switching process, Q is flowed throughLThe Miller electric current of grid is in RgLCaused by upper
Pressure drop should be greater than triode and open threshold voltage, and the auxiliary capacitor for making to connect with triode is accessed between grid source electrode, is Miller electric current
Bypass channel is provided, therefore in QHOpen moment：
0.7V is auxiliary triode P in formula (4)2LThreshold voltage is opened, in QHShutdown moment, it should meet：
0.7V is auxiliary triode P in formula (5)1LThreshold voltage is opened, 0.4V is auxiliary Xiao Jite diodes D1LPositive guide
Be powered pressure.
The embodiment of the present invention by taking CREE companies 2nd generation 1.2kV SiC MOSFET semiconductor devices C2M0080120D as an example,
Try to achieve driving resistance RgLSpan as shown in figure 5, as seen from the figure, do not consider parasitic gate inductance, driving resistance RgLValue
3.9 Ω are should be greater than, when considering its influence, Miller electric current will produce pressure drop in stray inductance, cause RgLValue is less than 3.9 Ω
Grid impedance pressure drop can be made to be more than triode threshold voltage, passive auxiliary circuit work.
When passive auxiliary circuit works, because triode and diode saturation conduction resistance only have tens milliohms, can neglect
Slightly it influences, then QHSwitching moments QLEquivalent simplified circuit it is as shown in Figure 6.
Node G nodal voltage equation can be obtained by Kirchhoff's law：
Solution formula (6) can obtain auxiliary capacitor voltageExpression formula is：
In formula (7), A=CL+Ciss, make t=VDC/ a, the grid voltage changes delta V expression formulas as caused by Miller electric current can be obtained
For：
In order to suppress crosstalk phenomenon, QLGrid voltage should be less than threshold voltage VGS(th), more than negative pressure most value VMAX(neg), by
This can be obtained：
Abbreviation formula (9) obtains Δ V<3.9V, it can thus be concluded that electric capacity C in passive auxiliary circuitLSpan refer to Fig. 7.By
Knowable to Fig. 7, the auxiliary capacitor C under the conditions of the present embodimentLReasonable value scope be 10~100nF, therefore, the present embodiment auxiliary
Electric capacity is taken as 100nF.In addition, auxiliary circuit can drive in gate pole one small resistor of series connection of triode so as to suppress triode
Electric current is undergone mutation.
In order to contrast the effect that the improvement of the present invention suppresses crosstalk drive device, it is flat that the present embodiment is based on LTspice emulation
Platform, the improvement for having built CREE companies 2nd generation 1.2kV SiC MOSFET semiconductor devices C2M0080120D suppress crosstalk driving
Circuit model, and suppress crosstalk drive circuit with conventional driving circuit, typical case and be analyzed, the present embodiment simulation model
Load inductance is 400uH, DC input voitage 400V, and auxiliary triode NPN, PNP select high power density, low saturation respectively
Pressure drop, high mid power the triode ZXTN25100BFHTA and ZXTP25100BFHTA for blocking pressure drop, booster diode selection
The Xiao Jite diode 1N5819HW-7-F of low conduction voltage drop, snapback's recovery characteristics, light-coupled isolation chip selection have fast-turn construction
The ACPL-4800 of throw-over rate, driving chip IXDN609 of the selection with stronger driving force, comparing result such as Fig. 8, Fig. 9 institute
Show.It can be seen from waveform：Bridge arm series connection phenomenon, typical case's suppression occurs in traditional driving method without auxiliary circuit, SiC MOSFET
Crosstalk driving processed and proposed by the present invention improve suppress the effective bridge arm suppression cross-interference issue of crosstalk driving energy；Suppress string compared to typical case
Drive circuit is disturbed, improves and suppresses crosstalk drive circuit while crosstalk is suppressed, QHOpening delay time reduces 77.6%, closes
Disconnected delay time reduces 65.2%, and switch total losses reduce 32.2%.
In order to further verify, proposed by the present invention improve suppresses crosstalk drive circuit validity under the conditions of different operating, this
Embodiment has also built dipulse test experiments platform, in different driving resistance, different input voltages, different loads current conditions
Under to improve suppress crosstalk drive circuit verify, and with typical case suppress crosstalk drive circuit be analyzed, as a result such as
Shown in Figure 10,11,12, it can be drawn according to the result to draw a conclusion：
1) typical case suppresses crosstalk driving and improvement proposed by the present invention suppresses crosstalk drive circuit and effectively can suppress string by bridge arm
Disturb problem.
2) either typical case suppresses crosstalk drive circuit or improvement drive circuit proposed by the present invention, SiC MOSFET are opened
Close loss all can with driving resistance, input voltage, load current increase and increase；And the delay of SiC switch mosfets is then by defeated
It is smaller to enter the influence of voltage and load current, but can also increase with the increase of driving resistance.
3) crosstalk drive circuit is suppressed compared to typical, the present invention proposes that improving suppression crosstalk drive circuit can effectively reduce out
Delay time and switching loss are closed, and with the increase of driving resistance, input voltage, load current, reduces SiC MOSFET and opens
The effect for closing loss becomes apparent, and further illustrates that the suppression crosstalk drive circuit proposed by the present invention that improves is suppressing crosstalk and carried
It is more advantageous in terms of high switching characteristic.
Finally illustrate, preferred embodiment above only to illustrate invention technical scheme and it is unrestricted, although passing through
The present invention is described in detail for above preferred embodiment, it is to be understood by those skilled in the art that can be in shape
Various changes are made in formula and to it in details, without departing from claims of the present invention limited range.
Claims (5)
- A kind of 1. improvement gate-drive device of suppression SiC MOSFET bridge arm crosstalks, it is characterised in that：Include main drive circuit With passive auxiliary circuit, the main drive circuit is connected with the SiC MOSFET elements；The passive auxiliary circuit with it is described Main drive circuit connection；The quantity of the main drive circuit is 2, for realizing SiC MOSFET described in main circuit upper and lower bridge arm The function of the disjunction of device, the quantity of the passive auxiliary circuit is 2, for suppressing to drive institute in the main circuit upper and lower bridge arm State caused bridge arm crosstalk during SiC MOSFET elements.
- 2. a kind of improvement gate-drive device of suppression SiC MOSFET bridge arm crosstalks according to claim 1, its feature It is：The main drive circuit specifically includes DC-DC converter unit, light-coupled isolation chip unit, driving chip unit, driving Resistance unit；The DC-DC converter unit includes RP12-09D converters and RP12-05S converters, and the RP12-09D becomes The cathode output end of parallel operation is connected with the cathode output end of the RP12-05S converters, the negative pole of the RP12-05S converters Output end is also connected with the passive auxiliary circuit, and input power is the main driving electricity by the DC-DC converter unit Road powers；The light-coupled isolation chip unit is used to realize isolating for control signal and drive signal, the light-coupled isolation chip Unit also includes the input for being used for receiving control signal；The output end of the driving chip unit and the one of driving resistance unit End connection, the driving chip unit are used for the driving voltage and driving current for exporting the SiC MOSFET elements；The drive The other end of dynamic resistance unit is connected with the SiC MOSFET elements gate pole, and the driving resistance unit is described for adjusting The switching speed of SiC MOSFET elements.
- 3. a kind of improvement gate-drive device of suppression SiC MOSFET bridge arm crosstalks according to claim 2, its feature It is：The passive auxiliary circuit suppresses unit by peak forward voltage and negative peak voltage suppresses unit and formed, the nothing Source auxiliary circuit is divided into the passive auxiliary circuit of bridge arm and the lower passive auxiliary circuit of bridge arm, respectively with the main drive of the upper and lower bridge arm Dynamic circuit connection；The peak forward voltage suppresses unit and includes NPN triode, diode, auxiliary capacitor I and auxiliary resistance I, the NPN The base stage of triode is connected with one end of the auxiliary resistance I, the other end and the DC-DC converter of the auxiliary resistance I The RP12-05S converters cathode output end connection of unit, one end of the colelctor electrode of the NPN triode and the auxiliary capacitor I Connection, the RP12-05S converters cathode output end of the other end of the auxiliary capacitor I and the DC-DC converter unit connect Connect, the emitter stage of the NPN triode is connected with the positive pole of the diode；The negative peak voltage suppresses unit and includes PNP triode, auxiliary capacitor II, auxiliary resistance II, the auxiliary resistance II one end is connected with the output end of the driving chip unit, and the other end is connected with the base stage of the PNP triode, described The colelctor electrode of PNP triode is connected with one end of the auxiliary capacitor II, the other end and the DC-DC of the auxiliary capacitor II The RP12-05S converters cathode output end connection of power converter cells；The emitter stage of the PNP triode and the diode The SiC MOSFET elements gate pole is connected to after negative pole connection；The peak forward voltage suppresses unit, the peak forward voltage for suppressor grid vibration；The negative peak voltage suppresses unit, the negative voltage peak value for suppressor grid vibration.
- 4. a kind of improvement gate-drive device of suppression SiC MOSFET bridge arm crosstalks according to claim 2, its feature It is：Moment is turned in bridge arm SiC MOSFET elements, the driving of complementary another bridge arm is resistor satisfied therewith：<mrow> <mfrac> <mrow> <msub> <mi>V</mi> <mrow> <mi>C</mi> <mi>g</mi> <mi>s</mi> </mrow> </msub> <mo>+</mo> <msub> <mi>V</mi> <mn>2</mn> </msub> </mrow> <mi>R</mi> </mfrac> <msub> <mi>R</mi> <mi>g</mi> </msub> <mo>></mo> <mn>0.7</mn> <mi>V</mi> </mrow>In bridge arm SiC MOSFET element shutdown moments, the driving of complementary another bridge arm is resistor satisfied therewith：<mrow> <mfrac> <mrow> <msub> <mi>V</mi> <mrow> <mi>C</mi> <mi>g</mi> <mi>s</mi> </mrow> </msub> <mo>+</mo> <msub> <mi>V</mi> <mn>2</mn> </msub> </mrow> <mi>R</mi> </mfrac> <msub> <mi>R</mi> <mi>g</mi> </msub> <mo>></mo> <mn>1.1</mn> <mi>V</mi> </mrow> 1In formulaFor gate-source capacitance voltage, V2For the shut-off negative pressure amplitude of SiC MOSFET elements, RgTo drive resistance, R=Rg+ Rg(in), wherein Rg(in)For the internal resistance of SiC MOSFET elements.
- 5. a kind of improvement gate-drive device of suppression SiC MOSFET bridge arm crosstalks according to claim 3, its feature It is：The auxiliary capacitor meets：<mrow> <mfrac> <mrow> <msub> <mi>V</mi> <mrow> <mi>D</mi> <mi>C</mi> </mrow> </msub> <msub> <mi>C</mi> <mrow> <mi>g</mi> <mi>d</mi> </mrow> </msub> </mrow> <mi>A</mi> </mfrac> <mo>+</mo> <mfrac> <mrow> <msub> <mi>aR</mi> <mrow> <mi>g</mi> <mrow> <mo>(</mo> <mi>i</mi> <mi>n</mi> <mo>)</mo> </mrow> </mrow> </msub> <msub> <mi>C</mi> <mrow> <mi>g</mi> <mi>d</mi> </mrow> </msub> <msub> <mi>C</mi> <mrow> <mi>i</mi> <mi>s</mi> <mi>s</mi> </mrow> </msub> <mi>C</mi> </mrow> <msup> <mi>A</mi> <mn>2</mn> </msup> </mfrac> <mrow> <mo>(</mo> <mn>1</mn> <mo>-</mo> <msup> <mi>e</mi> <mrow> <mo>-</mo> <msub> <mi>AV</mi> <mrow> <mi>D</mi> <mi>C</mi> </mrow> </msub> <mo>/</mo> <mrow> <mo>(</mo> <msub> <mi>aR</mi> <mrow> <mi>g</mi> <mrow> <mo>(</mo> <mi>i</mi> <mi>n</mi> <mo>)</mo> </mrow> </mrow> </msub> <msub> <mi>C</mi> <mrow> <mi>i</mi> <mi>s</mi> <mi>s</mi> </mrow> </msub> <mi>C</mi> <mo>)</mo> </mrow> </mrow> </msup> <mo>)</mo> </mrow> <mo><</mo> <mn>3.9</mn> <mi>V</mi> </mrow>V in formulaDCFor DC input voitage, CgdFor the gate leakage capacitance of SiC MOSFET elements, C is auxiliary capacitor, A=C+Ciss, its Middle Ciss=Cgs+Cgd, CgsFor the gate-source capacitance of SiC MOSFET elements, a is the switching rate of SiC MOSFET elements.
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| CN107769530A (en) * | 2017-11-29 | 2018-03-06 | 上海空间电源研究所 | The SiC switch tube driving circuits and method of synchronous rectification Buck converters |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103944549A (en) * | 2014-04-03 | 2014-07-23 | 南京航空航天大学 | High-reliability MOSFET drive circuit |
| CN104883038A (en) * | 2015-06-15 | 2015-09-02 | 山东大学 | Half-bridge circuit employing negative voltage to turn off half-bridge circuit driver, and method |
| CN105871230A (en) * | 2016-05-17 | 2016-08-17 | 南京航空航天大学 | Drive circuit of SiC MOSFET |
| CN106100297A (en) * | 2016-08-02 | 2016-11-09 | 北京交通大学 | Drive circuit based on silicon carbide MOSFET |
-
2017
- 2017-08-16 CN CN201710703079.8A patent/CN107342756A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103944549A (en) * | 2014-04-03 | 2014-07-23 | 南京航空航天大学 | High-reliability MOSFET drive circuit |
| CN104883038A (en) * | 2015-06-15 | 2015-09-02 | 山东大学 | Half-bridge circuit employing negative voltage to turn off half-bridge circuit driver, and method |
| CN105871230A (en) * | 2016-05-17 | 2016-08-17 | 南京航空航天大学 | Drive circuit of SiC MOSFET |
| CN106100297A (en) * | 2016-08-02 | 2016-11-09 | 北京交通大学 | Drive circuit based on silicon carbide MOSFET |
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| CN107733220A (en) * | 2017-11-20 | 2018-02-23 | 武汉华海通用电气有限公司 | The drive circuit that a kind of anti-half-bridge or full-bridge switching power supply circuit mislead |
| CN107769530A (en) * | 2017-11-29 | 2018-03-06 | 上海空间电源研究所 | The SiC switch tube driving circuits and method of synchronous rectification Buck converters |
| CN108233684A (en) * | 2018-01-22 | 2018-06-29 | 深圳青铜剑科技股份有限公司 | The grid clutter reduction circuit and driving circuit of a kind of SiC MOSFET |
| CN108988617A (en) * | 2018-08-22 | 2018-12-11 | 哈尔滨工业大学 | A kind of driving circuit and circuits improvement method of active suppression SiC MOSFET crosstalk phenomenon |
| CN108988617B (en) * | 2018-08-22 | 2019-07-09 | 哈尔滨工业大学 | A kind of driving circuit and circuits improvement method of active suppression SiC MOSFET crosstalk phenomenon |
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| CN109672336A (en) * | 2019-01-14 | 2019-04-23 | 南京工程学院 | A kind of SiC MOSFET gate pole auxiliary circuit |
| CN109672336B (en) * | 2019-01-14 | 2020-10-30 | 南京工程学院 | SiC MOSFET gate pole auxiliary circuit |
| CN109921620A (en) * | 2019-03-13 | 2019-06-21 | 安徽大学 | A kind of clutter reduction driving circuit and control method |
| CN109921620B (en) * | 2019-03-13 | 2021-07-02 | 安徽大学 | Crosstalk suppression driving circuit and control method |
| CN110048698A (en) * | 2019-04-17 | 2019-07-23 | 西安电子科技大学 | Inhibit the driving circuit of SiC MOSFET grid crosstalk |
| CN110212740A (en) * | 2019-05-15 | 2019-09-06 | 中国矿业大学 | A kind of driving circuit inhibiting the crosstalk of SiC MOSFET gate pole and oscillation |
| CN110851772A (en) * | 2019-10-12 | 2020-02-28 | 桂林电子科技大学 | Silicon carbide MOSFET modeling method based on double-pulse test platform |
| CN111082788A (en) * | 2019-12-30 | 2020-04-28 | 上海瞻芯电子科技有限公司 | Gate driving device and electronic equipment |
| CN111082788B (en) * | 2019-12-30 | 2023-09-22 | 上海瞻芯电子科技有限公司 | Gate driving device and electronic equipment |
| CN111162671A (en) * | 2020-01-22 | 2020-05-15 | 北京交通大学 | Multi-level active driving circuit for inhibiting SiC MOSFET crosstalk |
| CN111162671B (en) * | 2020-01-22 | 2021-03-30 | 北京交通大学 | Multi-level active driving circuit for inhibiting SiC MOSFET crosstalk |
| CN111525780A (en) * | 2020-03-16 | 2020-08-11 | 浙江大学 | Circuit, method and device for restraining driving crosstalk voltage of wide-bandgap power device in high-impedance off state |
| CN111555596A (en) * | 2020-04-27 | 2020-08-18 | 杭州电子科技大学 | SiC MOSFET grid crosstalk suppression driving circuit with adjustable negative pressure |
| CN111555596B (en) * | 2020-04-27 | 2021-05-07 | 杭州电子科技大学 | SiC MOSFET grid crosstalk suppression driving circuit with adjustable negative pressure |
| CN111614236A (en) * | 2020-06-15 | 2020-09-01 | 南京工程学院 | SiC MOSFET gate auxiliary circuit based on bridge circuit |
| CN114024460A (en) * | 2020-07-15 | 2022-02-08 | 威马智慧出行科技（上海）有限公司 | Inverter and method for inhibiting bridge arm crosstalk |
| WO2022048629A1 (en) * | 2020-09-04 | 2022-03-10 | 山特电子（深圳）有限公司 | Miller clamping device for parallel switching transistors and driver comprising same |
| CN112737312A (en) * | 2020-12-28 | 2021-04-30 | 山东大学 | Drive circuit for inhibiting crosstalk of SiC MOSFET bridge circuit |
| CN113872420A (en) * | 2021-09-23 | 2021-12-31 | 上海电机学院 | Improved gate drive circuit for inhibiting bridge arm crosstalk of SiC-MOSFET (silicon carbide-metal oxide semiconductor field effect transistor) |
| CN113872420B (en) * | 2021-09-23 | 2024-05-31 | 上海电机学院 | Improved gate electrode driving circuit for inhibiting SiC-MOSFET bridge arm crosstalk |
| CN114094865A (en) * | 2021-11-12 | 2022-02-25 | 金琥新能源汽车(成都)有限公司 | Bridge arm crosstalk processing method and device, electronic equipment and storage medium |
| CN113937989A (en) * | 2021-11-16 | 2022-01-14 | 西安电子科技大学 | Drive circuit and method for inhibiting crosstalk and drain current overshoot of SiC MOSFET (Metal oxide semiconductor field Effect transistor) |
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Application publication date: 20171110 |