CN114571086B - Nanosecond laser-induced plasma composite femtosecond laser processing device and processing method - Google Patents
Nanosecond laser-induced plasma composite femtosecond laser processing device and processing method Download PDFInfo
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- CN114571086B CN114571086B CN202111678468.2A CN202111678468A CN114571086B CN 114571086 B CN114571086 B CN 114571086B CN 202111678468 A CN202111678468 A CN 202111678468A CN 114571086 B CN114571086 B CN 114571086B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The invention discloses a nanosecond laser-induced plasma composite femtosecond laser processing device and a processing method, wherein the processing device comprises a femtosecond laser, a nanosecond laser, a focusing lens, a transparent workpiece, a polishing target, a workbench and a clamp; the polishing target is arranged on the workbench, the transparent workpiece is arranged on the clamp, and the transparent workpiece and the polishing target are arranged up and down; the nanosecond laser emits nanosecond laser, the nanosecond laser is focused and bombarded on a polished target material through a focusing lens and a transparent workpiece to generate a metal plasmoid, and the metal plasmoid is transferred to the back surface of the transparent workpiece and is reflected and etched on the front surface of the transparent workpiece so as to generate graphitization etching; the femtosecond laser emits femtosecond laser which is focused on a transparent workpiece through a focusing lens and removes graphitized etching. It has the following advantages: the method has great application prospect in the micro-nano manufacturing field, meets the requirement of high-precision machining quality in industry, and solves the machining difficulty of transparent hard and brittle material workpieces.
Description
Technical Field
The invention relates to the technical field of high-efficiency precise processing methods, in particular to a device and a method for processing transparent hard and brittle materials by coupling nanosecond laser with plasma induced by nanosecond laser.
Background
Because of the special requirements of the industry field on some high-precision parts, some parts often have precise shapes and various sizes, and the femtosecond machining quality is high, but the machining efficiency is low, and the traditional tool cutting method needs a plurality of working procedures, so that the machining efficiency is low due to excessive machining steps. Thus, machining these precise high quality profiles constitutes a machining challenge.
The transparent hard and brittle material has the characteristics of high hardness, high brittleness, low fracture toughness and the like, has very similar elastic limit and strength, belongs to a difficult-to-process material, has the defects of easy generation of microcracks, subsurface damaged layers and the like on the processing surface, has poor thermal conductivity, has high temperature gradient in a heat affected zone and is easy to generate thermal cracks in the processing process. By adopting the traditional transparent hard and brittle material processing method, such as cutting, grinding and polishing, cracks and pits can be generated on the surface of a workpiece, the processing precision and efficiency are low, and the requirement of high-precision processing of the material can not be met.
With the continuous development of lasers, ultra-short pulse laser fine processing technology is mature, ultra-fine processing (submicron to nanometer level) can be realized, precise three-dimensional processing of the inside of transparent materials can be realized, the thermal influence is small, and the range of processing materials is wide. The microstructure processing quality processed by the ultra-short pulse laser is greatly improved compared with that of the long pulse laser, but the processing cost is high, and the processing speed is not high when cold processing is completely realized.
Focused ion beam processing has been seen as the most potential micro-nano processing means because of its high resolution processing characteristics. However, the low processing efficiency of the single-point processing mode seriously hinders development, the processing process requires a vacuum environment, the cost is high, the quality of the processed surface is limited, the process is expensive and the time is long, so that the single-point processing mode is not widely applied to industry as a micro-nano processing means at the present stage.
Disclosure of Invention
The invention provides a nanosecond laser-induced plasma composite femtosecond laser processing device and a processing method, which overcome the defects in the background technology.
One of the adopted technical schemes for solving the technical problems is as follows: the nanosecond laser-induced plasma composite femtosecond laser processing device comprises a femtosecond laser (2), a nanosecond laser (3), a focusing lens (5), a transparent workpiece (6), a polished target (8), a workbench (9) and a clamp (10); the polishing target (8) is arranged on a workbench (9), the transparent workpiece (6) is arranged on a clamp (10), and the transparent workpiece (6) and the polishing target (8) are arranged up and down; the nanosecond laser (3) emits nanosecond laser, the nanosecond laser is focused and bombarded on a polished target (8) through a focusing lens (5) and a transparent workpiece (6) to generate a metal plasmoid, the metal plasmoid is transferred to the back of the transparent workpiece (6), and the nanosecond laser is used for reflecting and etching the front of the transparent workpiece (6) to generate graphitization etching; the femtosecond laser (2) emits a femtosecond laser, which is focused on a transparent workpiece (6) through a focusing lens (5) and removes the graphitized etching that occurs.
In one embodiment: the laser scanning device also comprises a scanning galvanometer (4), and the femtosecond laser and the nanosecond laser are irradiated to a focusing lens (5) through the scanning galvanometer (4).
In one embodiment: the system also comprises a computer control system (1) and a pulse signal coordination generator (11), wherein the computer control system (1) is connected with the pulse signal coordination generator (11), and the pulse signal coordination generator (11) is connected with the femtosecond laser (2) and the nanosecond laser (3).
In one embodiment: the workbench (9) is a lifting workbench, the clamp (10) is a lifting clamp (10) and is provided with a linear motor, and the lifting of the clamp (10) is controlled by the linear motor.
In one embodiment: the polishing device further comprises a computer control system (1) and a camera (7), wherein the computer control system (1) is connected with the camera (7), the workbench (9) and the clamp (10), and at least one position of the workbench (9) and the clamp (10) is adjusted according to the gap distribution change condition of the polished target (8) and the transparent workpiece (6) shot by the camera (7), so that the gap between the polished target (8) and the transparent workpiece (6) is ensured to be a fixed value, and a focusing focus is always on the polished target (8).
In one embodiment: the transparent workpiece (6) and the polishing target (8) are arranged in a vertically-spaced manner.
In one embodiment: the upper and lower flat spacing between the transparent workpiece (6) and the polishing target (8) is 0.05-0.5mm.
In one embodiment: the polishing target material (8) is made of elements with high atomic numbers.
The second technical scheme adopted for solving the technical problems is as follows: the nanosecond laser induced plasma composite femtosecond laser processing method comprises the following steps:
a transparent workpiece (6) is arranged on a clamp (10), and a polishing target (8) is arranged on a workbench (9);
the nanosecond laser (3) emits nanosecond laser, the nanosecond laser is focused by the focusing lens (5) and the transparent workpiece (6) to bombard the polished target (8) so as to generate a metal plasmoid, the metal plasmoid is transferred to the back of the transparent workpiece (6), the front of the transparent workpiece (6) is etched by reflection of the nanosecond laser, and graphitized etching occurs on the front of the rising front temperature of the transparent workpiece (6) due to the accumulation of enough heat;
the femtosecond laser (2) emits femtosecond laser, and the femtosecond laser is focused on the transparent workpiece (6) through the focusing lens (5) and removes the graphitized etching.
Compared with the background technology, the technical proposal has the following advantages:
the nanosecond laser-induced plasma and femtosecond laser composite processing technology is used as a low-damage and low-graphitization micro-nano processing technology, and has the advantages of high precision, high processing speed, good surface integrity, small dark damage, small surface roughness, small heat affected zone, good surface quality, simple process, flexible use and easy realization, has great application prospect in the micro-nano manufacturing field, can be used for micro-groove processing of diamond parts, realizes the industrial high-precision processing quality requirement, and solves the processing difficulty of transparent and hard and brittle material workpieces.
Drawings
The invention is further described below with reference to the drawings and the detailed description.
Fig. 1 is a schematic view of the processing apparatus according to the present embodiment.
Fig. 2 is a diagram showing the actual processing effect of the micro groove processed by the processing device according to the present embodiment.
Detailed Description
Referring to fig. 1, the device for processing transparent and brittle materials by coupling nanosecond laser with femto-second laser through nanosecond laser induced plasmas comprises a computer control system 1, a femto-second laser 2, a nanosecond laser 3, a scanning galvanometer 4, a focusing lens 5, a transparent workpiece 6, a CDD camera 7, a polishing target 8, a workbench 9, a liftable clamp 10 and a pulse signal coordination generator 11; the workbench 9 is a liftable workbench, and the liftable clamp 10 comprises a linear motor and is driven to lift by the linear motor; the computer control system 1 is connected with a pulse signal coordination generator 11, and the pulse signal coordination generator 11 is connected with a femtosecond laser 2 and a nanosecond laser 3; the polishing target material 8 is arranged on the workbench 9, the transparent workpiece 6 is arranged on the clamp 10, and the transparent workpiece 6 and the polishing target material 8 are arranged in a vertically-spaced mode, wherein the spacing between the transparent workpiece 6 and the polishing target material 8 is 0.05-0.5mm; the nanosecond laser 3 emits nanosecond laser, the nanosecond laser is focused and bombarded on a polished target material 8 through a scanning galvanometer 4, a focusing lens 5 and a transparent workpiece 6 to generate a metal plasmoid, the metal plasmoid is transferred to the back surface of the transparent workpiece 6, and the nanosecond laser is reflected and etched on the front surface of the transparent workpiece 6 to generate graphitization etching; the femtosecond laser 2 emits a femtosecond laser, which is focused on a transparent workpiece 6 through a scanning galvanometer 4 and a focusing lens 5 and removes the graphitized etching. The femtosecond laser beam generated by the femtosecond laser 2 is coupled with the nanosecond laser beam generated by the nanosecond laser 3 to pass through the scanning galvanometer 4 and the focusing lens 5. The computer control system 1 is connected with a camera 7, a workbench 9 and a clamp 10, and adjusts at least one position of the workbench 9 and the clamp 10 according to the gap distribution change condition of the polished target 8 and the transparent workpiece 6 shot by the camera 7, so as to ensure that the gap between the polished target 8 and the transparent workpiece 6 is a fixed value, and the focusing focus is always on the polished target 8.
The transparent workpiece 6 is diamond with moderate thickness and good shape, and has better full-wave band laser permeability or better laser permeability in a specific wave band, such as diamond, sapphire, glass and the like. If the processed transparent material has better laser permeability in a specific wave band, selecting a laser of the laser in the specific wave band range, so that the laser energy can reach the target material without nearly loss, thereby efficiently generating plasma; and the laser spot size is matched with the feature geometric dimension of the processed part, and preferably, when the feature geometric dimension of the processed part is 100 microns, the laser spot size is controlled below 10 microns.
The nanosecond laser that strikes the target 8 through the transparent workpiece 6 may take many forms, including spot laser, line laser and surface laser, where the spot laser may achieve higher machining accuracy and the line laser and surface laser may achieve higher machining efficiency, as preferred.
The polishing target material 8 is inert or active, the inert material does not react with the processed material, such as copper, the generated plasma is removed by physical processes of impact, thermal ablation and the like, the active material reacts with the processed material, and the generated plasma is removed by the impact and the thermal ablation and is simultaneously removed by chemical removal, so that the removal efficiency is further improved. Preferably, the special-shaped target material is composed of elements with high atomic numbers, so that the formed plasma has larger kinetic energy, and the material can be removed better through impact. The polishing target material 8 is prepared by adopting an ultra-precise machining technology, and preferably, the colored special-shaped target material is machined by adopting single-point diamond ultra-precise cutting; the black special-shaped target is processed by single-point ultra-precise grinding, and preferentially, a material with good processability is selected as the target. The roughness of the polished target is 10 nanometers, and the surface of the target has good flatness so as to ensure better plasma emission capability.
The fixture is driven to lift by a linear motor, the transparent workpiece is driven to lift (along the normal direction of the target), and the linear motor is provided with a high-precision grating ruler to ensure the precision of the normal movement. Preferably, the positioning accuracy of the normal direction motion is better than 0.1 micron, and the repeated positioning accuracy is better than 1 micron. The gap distribution change condition of the target and the transparent workpiece is ensured by an online high-resolution CCD camera and an image processing technology, and the linear motor is controlled to move based on the gap change condition, so that the gap between the target and the processed surface is basically a certain value. The gap is adjusted by using laser energy distribution to obtain better geometric shape precision, and preferably, the gap between the target material and the processed surface is 0.05-0.5mm.
The nanosecond laser induced plasma composite femtosecond laser processing method comprises the following steps:
the transparent workpiece 6 is arranged on a clamp 10, and the polishing target 8 is arranged on a workbench 9;
the nanosecond laser 3 emits nanosecond laser, the nanosecond laser is focused and bombarded on the polished target material 8 through the focusing lens 5 and the transparent workpiece 6 to generate a metal plasmoid, the metal plasmoid is transferred to the back of the transparent workpiece 6, the front of the transparent workpiece 6 is etched by reflection of the nanosecond laser, and graphitization etching occurs on the front of the rising front temperature of the transparent workpiece 6 due to the accumulation of enough heat; nanosecond laser radiation is focused on the upper surface of the polishing target material 8, the polishing target material 8 absorbs a large amount of laser energy, so that a layer of thin area surface on the upper surface of the polishing target material 8 is heated and vaporized, vaporized particles continue to absorb the laser energy, when the laser energy is greater than the breakdown threshold value of the material of the polishing target material 8, the polishing target material 8 is broken down to generate 'avalanche type' ionization so as to form high-temperature high-pressure plasma, the plasma continues to absorb the laser energy so as to generate local explosion and etch or deposit on the lower surface of the transparent workpiece 6, and the plasma consists of unionized neutral particles, electrons and ions;
the femtosecond laser 2 emits a femtosecond laser, which is focused on the transparent work 6 through the focusing lens 5 and removes the graphitized etching occurring.
Wherein: the nanosecond laser and the femtosecond laser synchronously penetrate through the transparent workpiece 6 of the monocrystalline diamond, the emitted low-power femtosecond laser with far-field divergence angle larger than that of the corresponding nanosecond laser focuses on the near surface inside the diamond with good transparency, the synchronously emitted nanosecond laser bombards a metal target material, generates high-temperature and high-speed deposited metal plasmons on the back of the diamond and reflectively etches the diamond carbonized on the front, at the moment, the rapidly-rising diamond surface temperature causes graphitization etching on the front due to the accumulation of enough heat, and the good defocusing removal effect of the femtosecond laser on graphitization is utilized, so that the diamond can generate high-efficiency front depth etching effect in the composite processing method, and meanwhile, the deep groove is accompanied with graphitization, so that the synchronously scanned femtosecond laser overcomes the defect of low cold processing efficiency and removes the diamond with graphitization inhibition.
Application example of the present embodiment: the nanosecond laser is infrared laser with nanosecond level (2 nanoseconds < pulsedration), the diamond micro-groove is processed by utilizing a nanosecond laser induced plasma coupling femtosecond laser processing technology, a pure copper metal target is adopted as a target, the femtosecond laser is laser with 1030nm wavelength of about 200fs, and a 1064nm infrared laser (1-200 nanoseconds) is adopted as a laser with the pulse width of 0.6 nanosecond. The laser generates laser beam to focus on the pure iron target material, and generates iron plasma to bombard the back of diamond reversely, so as to generate ablation and vaporization effect, and meanwhile, iron can chemically react with diamond to generate iron carbide, and the chemical reaction and mechanical heat are removed to accelerate the removal of diamond material. The Z-direction position of the lifting clamp is continuously adjusted, so that the clearance between the pure iron target and the surface to be processed of the diamond is basically a certain value (the distance is 0.18mm in this place), and better geometric shape precision is obtained. The laser pulse power is 20W, the femtosecond laser is 10W, the laser with 1030nm wavelength, the synchronous scanning speed is 0.5mm/s, the laser pulse frequency is 10KHz (synchronous femtosecond laser), and the laser pulse width is 1ns. The schematic diagram of the processing is shown in figure 2.
The foregoing description is only illustrative of the preferred embodiments of the present invention, and therefore should not be taken as limiting the scope of the invention, for all changes and modifications that come within the meaning and range of equivalency of the claims and specification are therefore intended to be embraced therein.
Claims (9)
1. Nanosecond laser induction plasma compound femtosecond laser processing device, its characterized in that: the device comprises a femtosecond laser (2), a nanosecond laser (3), a focusing lens (5), a transparent workpiece (6), a polishing target (8), a workbench (9) and a clamp (10); the polishing target (8) is arranged on a workbench (9), the transparent workpiece (6) is arranged on a clamp (10), and the transparent workpiece (6) and the polishing target (8) are arranged up and down; the nanosecond laser (3) emits nanosecond laser, the nanosecond laser is focused and bombarded on a polished target (8) through a focusing lens (5) and a transparent workpiece (6) to generate a metal plasmoid, the metal plasmoid is transferred to the back of the transparent workpiece (6), and the nanosecond laser is used for reflecting and etching the front of the transparent workpiece (6) to generate graphitization etching; the femtosecond laser (2) emits a femtosecond laser, which is focused on a transparent workpiece (6) through a focusing lens (5) and removes the graphitized etching that occurs.
2. The nanosecond laser-induced plasma composite femtosecond laser processing apparatus according to claim 1, wherein: the laser scanning device also comprises a scanning galvanometer (4), and the femtosecond laser and the nanosecond laser are irradiated to a focusing lens (5) through the scanning galvanometer (4).
3. The nanosecond laser-induced plasma composite femtosecond laser processing apparatus according to claim 1, wherein: the system also comprises a computer control system (1) and a pulse signal coordination generator (11), wherein the computer control system (1) is connected with the pulse signal coordination generator (11), and the pulse signal coordination generator (11) is connected with the femtosecond laser (2) and the nanosecond laser (3).
4. The nanosecond laser-induced plasma composite femtosecond laser processing apparatus according to claim 1, wherein: the workbench (9) is a lifting workbench, the clamp (10) is a lifting clamp (10) and is provided with a linear motor, and the lifting of the clamp (10) is controlled by the linear motor.
5. The nanosecond laser-induced plasma composite femtosecond laser processing apparatus according to claim 4, wherein: the polishing device further comprises a computer control system (1) and a camera (7), wherein the computer control system (1) is connected with the camera (7), the workbench (9) and the clamp (10), and at least one position of the workbench (9) and the clamp (10) is adjusted according to the gap distribution change condition of the polished target (8) and the transparent workpiece (6) shot by the camera (7), so that the gap between the polished target (8) and the transparent workpiece (6) is ensured to be a fixed value, and a focusing focus is always on the polished target (8).
6. The nanosecond laser-induced plasma composite femtosecond laser processing apparatus according to claim 1, wherein: the transparent workpiece (6) and the polishing target (8) are arranged in a vertically-spaced manner.
7. The nanosecond laser-induced plasma composite femtosecond laser processing apparatus according to claim 6, wherein: the upper and lower flat spacing between the transparent workpiece (6) and the polishing target (8) is 0.05-0.5mm.
8. The nanosecond laser-induced plasma composite femtosecond laser processing apparatus according to claim 1, wherein: the polishing target material (8) is made of elements with high atomic numbers.
9. The nanosecond laser induced plasma composite femtosecond laser processing method is characterized in that: comprising the following steps:
a transparent workpiece (6) is arranged on a clamp (10), and a polishing target (8) is arranged on a workbench (9);
the nanosecond laser (3) emits nanosecond laser, the nanosecond laser is focused by the focusing lens (5) and the transparent workpiece (6) to bombard the polished target (8) so as to generate a metal plasmoid, the metal plasmoid is transferred to the back of the transparent workpiece (6), the front of the transparent workpiece (6) is etched by reflection of the nanosecond laser, and graphitized etching occurs on the front of the rising front temperature of the transparent workpiece (6) due to the accumulation of enough heat;
the femtosecond laser (2) emits femtosecond laser, and the femtosecond laser is focused on the transparent workpiece (6) through the focusing lens (5) and removes the graphitized etching.
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