CN114551573A - 一种氮化镓p沟道器件 - Google Patents
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- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 4
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
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- 229910052594 sapphire Inorganic materials 0.000 claims description 2
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Abstract
本发明属于半导体技术领域，涉及一种氮化镓P沟道器件(P‑MOSFET)。本发明中氮化镓P‑MOSFET的AlGaN势垒层具有渐变Al组分，利用渐变Al组分AlGaN势垒层和P‑GaN沟道层之间的极化效应，在P‑GaN/AlGaN异质结界面产生二维空穴气(2DHG)，形成导电空穴沟道，从而形成氮化镓P‑MOSFET。本发明的有益效果：利用渐变Al组分AlGaN势垒层，可以通过调节渐变Al组分AlGaN势垒层中各层的Al组分调节AlGaN与P‑GaN沟道层之间的极化强度，从而调节极化产生的2DHG浓度、氮化镓P‑MOSFET的阈值电压和电流能力；同时，也可以通过调节AlGaN势垒层中各层的Al组分，调节AlGaN/GaN异质结界面二维电子气(2DEG)浓度，从而实现氮化镓P‑MOSFET和氮化镓N‑MOSFET的单片集成。
Description
技术领域
本发明涉及半导体器件技术领域，涉及一种氮化镓P沟道器件。
背景技术
氮化镓材料作为第三代宽禁带代半导体材料，具有宽禁带、高功率密度、化学性质稳定、耐高温、耐腐蚀、抗辐射，适合高频、大功率应用。AlGaN/GaN异质结界面处由于材料极化效应而引起的2DEG具有高浓度、高迁移率的特点，因此器件可以实现高开关频率和低导通损耗。近10年GaN HEMT技术高速发展并逐步成熟，目前的GaN HEMT已经应用到快充、数据中心、地电动汽车等重要领域。GaN HEMT相较于Si基功率器件具有更小的导通电阻、更小的寄生电容，更低的快关损耗。工作速度快、转换效率高、功率密度大是GaN HEMT功率器件的核心性能优势。为了进一步提高GaN HEMT在高频低功耗方面的发展，全GaN的集成技术称为GaN器件的发展趋势。
但是目前只有成熟的GaN N型器件，全GaN单片集成只能利用全N-HEMT，电路复杂且功耗高。利用CMOS能够实现低的静态功耗，简化电路设计，提高IC性能。因此，目前GaN全集成需要解决的问题是：实现氮化镓P-MOSFET。
发明内容
针对上述问题，本发明提出了一种氮化镓P沟道器件(P-MOSFET)，如图1、图2所示。利用渐变Al组分AlGaN做势垒层，AlGaN势垒层的Al组分可以是渐变也可以是陡变。利用P-GaN/AlGaN之间的极化效应，可以在其界面产生高密度的2DHG，实现氮化镓P-MOSFET。同时，通过调节AlGaN各层的Al组分，可以调节氮化镓P-MOSFET的器件电流能力、阈值电压。
本发明解决上述技术问题所采用的技术方案是：一种氮化镓P沟道器件，如图1、图2所示，从下至上依次包括层叠设置的衬底01、位于衬底01上方的缓冲层02、位于缓冲层02上方的AlGaN势垒层03、位于AlGaN势垒层03上方的P-GaN沟道层04；所述P-GaN沟道层04与AlGaN势垒层03构成异质结；在P-GaN沟道层04上表面覆盖有钝化层05；还包括凹槽栅结构，凹槽栅结构的凹槽位于P-GaN沟道层04中，在凹槽底部和侧壁覆盖有栅介质层06，且栅介质层06还沿钝化层05上表面向两侧延伸至覆盖钝化层05上表面，栅介质层06中淀积有栅极金属08，P-GaN沟道层04、栅介质层06和栅极金属08构成MIS栅结构；在所述P-GaN沟道层04上表面一端具有源极欧姆金属07，源极欧姆金属07的侧面与钝化层05和栅介质层06接触；在所述P-GaN沟道层04的另一端具有漏极欧姆金属09，漏极欧姆金属09的侧面与钝化层05和栅介质层06接触；其特征在于，所述AlGaN势垒层03中的Al组分为渐变的，其渐变方式为从靠近缓冲层02的一端到靠近P-GaN沟道层04一端逐渐增加。
进一步的，所述P-GaN沟道层04的掺杂浓度1～5(x1017cm-3)，厚度为60-120nm。
进一步的，所述渐变Al组分AlGaN势垒层03的Al组分的变化范围在0-1之间。Al组分可以是渐变(如图1所示)，也可以是突变(如图2所示)。
进一步的，所述衬底材料01可以为Si、蓝宝石、SiC和GaN中一种。
进一步的，所述源电极07和所述漏电极09的材料可以是Ni/Au，Ti/Au，Pd/Au或者Ni/Au/Ni中任一种多层金属。
进一步的，所述栅电极08材料可以是于Ni/Au，Pt/Au或者Mo/Au中任一种多层金属。
进一步的，所述钝化层05可以是二氧化硅、氮化硅、氧化铝、氧化镁和二氧化铪等中的一种或多种组合，其厚度可以为1-100nm。
进一步的，所述栅介质层06可以是二氧化硅、氮化硅、氧化铝和二氧化铪等中的一种或多种组合，其厚度可以为1-100nm。
本发明利用渐变Al组分AlGaN势垒层与P-GaN形成异质结，由于异质结之间的极化效应，在P-GaN/AlGaN异质结界面形成二维空穴气积累，二维空穴气在栅、源、漏压的共同作用下形成沿源、漏方向的空穴电流，形成氮化镓P-MOSFET。
本发明的有益效果：本发明首先是提供了一种实现氮化镓P-MOSFET的方法；其次，利用渐变Al组分AlGaN势垒层的氮化镓P-MOSFET的优势在于可以通过调节AlGaN势垒层不同位置处的Al组分，调节P-GaN/AlGaN异质结界面的二维空穴气浓度、AlGaN/GaN异质结界面二维电子气的浓度、氮化镓P-MOSFET的电流能力和阈值电压，如表1、图4和图5所示，为GaN CMOS的实现提供一种技术方案。
附图说明
图1所示为本发明实施例提供的一种氮化镓P沟道器件(AlGaN层Al组分渐变)
图2所示为本发明实施例提供的一种氮化镓P沟道器件(AlGaN层Al组分突变)
图3所示为本发明实施例提供的三种不同Al组分情况下的异质结能带图
图4所示为本发明实施例提供的三种不同Al组分情况下的转移特性曲线(线性)
图5所示为本发明实施例提供的三种不同Al组分情况下的转移特性曲线(对数)
图6所示为本发明实施例提供的输出特性曲线
具体实施方式
下面结合附图对本发明进行详细描述
本发明能够实现氮化镓P-MOSFET，且能通过调节势垒层的Al组分调节器件的电流能力和阈值电压。如图4所示。
实施例
本例结构如图2所示，特点是利用渐变Al组分AlGaN势垒层，外延结构从下至上包括：衬底01、位于衬底01上方的缓冲层02、位于缓冲层02上方的渐变Al组分AlGaN势垒层03、位于渐变Al组分AlGaN势垒层03上方的P-GaN沟道层04；所述P-GaN沟道层04与渐变Al组分AlGaN势垒层03构成异质结；在P-GaN沟道层04上表面覆盖有钝化层05；其特征在于，还包括凹槽栅结构，凹槽栅结构位于P-GaN沟道层04内，P-GaN凹槽上方覆盖有栅介质层06，在凹槽的栅介质上方淀积栅极金属08，P-GaN沟道层04、栅介质层06和栅极金属08构成MIS栅结构；在所述P-GaN沟道层04左端具有源极欧姆金属07；在所述P-GaN沟道层04右端具有漏极欧姆金属09。本实施例中Al组分为阶梯变化，所述渐变Al组分AlGaN势垒层03包括Al组分不同的三层，从下至上为Alx2GaN、Alx1GaN和AlxGaN。表1为AlGaN势垒层总厚度一定(Alx2GaN、Alx1GaN和AlxGaN厚度相同)，7种不同Al组分情况下P-GaN/AlGaN异质结界面2DHG和AlGaN/GaN异质结界面2DEG浓度的情况。第03号和05号数据说明AlGaN势垒层的总厚度不变，x2和x的变化对空穴浓度和氮化镓P-MOSFET的电流、阈值电压有一定的影响。适当的调节x，x1，x2可以调节2DHG和2DEG的浓度和氮化镓P-MOSFET的电流能力和阈值电压。
本发明利用渐变Al组分AlGaN层作为势垒层的氮化镓P-MOSFET的工作原理：渐变Al组分AlGaN势垒层与P-GaN形成P-GaN/AlGaN异质结，异质结界面积累的2DHG在栅、源、漏电压的作用下沿着源、漏方向移动，形成空穴电流，实现氮化镓P-MOSFET。可以通过调节AlGaN势垒层各层的Al组分调节异质结极化的强度、2DHG浓度、2DEG浓度、器件的电流能力和阈值电压。如表1展示了将AlGaN层分为三层，从上至下每层的Al组分分别为x，x1，x2所对应的2DHG和2DEG的浓度。
表1
调节Al组分x，x1，x2的含量，可以优化2DHG和2DEG的浓度。可在同一外延片上同时集成GaN p-FET和GaN n-FET器件。
Claims (10)
1.一种氮化镓P沟道器件，从下至上依次包括层叠设置的衬底(01)、位于衬底(01)上方的缓冲层(02)、位于缓冲层(02)上方的AlGaN势垒层(03)、位于AlGaN势垒层(03)上方的P-GaN沟道层(04)；所述P-GaN沟道层(04)与AlGaN势垒层(03)构成异质结；在P-GaN沟道层(04)上表面覆盖有钝化层(05)；还包括凹槽栅结构，凹槽栅结构的凹槽位于P-GaN沟道层(04)中，在凹槽底部和侧壁覆盖有栅介质层(06)，且栅介质层(06)还沿钝化层(05)上表面向两侧延伸至覆盖钝化层(05)上表面，栅介质层(06)中淀积有栅极金属(08)，P-GaN沟道层(04)、栅介质层(06)和栅极金属(08)构成MIS栅结构；在所述P-GaN沟道层(04)上表面一端具有源极欧姆金属(07)，源极欧姆金属(07)的侧面与钝化层(05)和栅介质层(06)接触；在所述P-GaN沟道层(04)的另一端具有漏极欧姆金属(09)，漏极欧姆金属(09)的侧面与钝化层(05)和栅介质层(06)接触；其特征在于，所述AlGaN势垒层(03)中的Al组分为渐变的，其渐变方式为从靠近缓冲层(02)的一端到靠近P-GaN沟道层(04)一端逐渐增加。
2.根据权利要求1所述的一种氮化镓P沟道器件，其特征在于，基于P-GaN沟道层和AlGaN势垒层之间的极化效应，在其异质结界面产生二维空穴气形成空穴沟道。
3.根据权利要求1所述的一种氮化镓P沟道器件，其特征在于，所述P-GaN沟道层(04)的掺杂浓度1～5(x1017cm-3)。
4.根据权利要求1所述的一种氮化镓P沟道器件，其特征在于，所述P-GaN沟道层(04)厚度为60-120nm。
5.根据权利要求1所述的一种氮化镓P沟道器件，其特征在于，AlGaN势垒层(03)中Al组分变化范围在0-1之间，Al组分的渐变方式为线性变化或阶梯变化。
6.根据权利要求1所述的一种氮化镓P沟道器件，其特征在于，所述衬底(01)采用的材料为Si、蓝宝石、SiC或GaN中的一种。
7.根据权利要求1所述的一种氮化镓P沟道器件，其特征在于，所述钝化层(05)采用的材料为是二氧化硅、氮化硅、氧化铝、氧化镁和二氧化铪中的一种或多种组合，其厚度为1-100nm。
8.根据权利要求1所述的一种氮化镓P沟道器件，其特征在于，所述栅介质层(06)采用的材料为二氧化硅、氧化铝和二氧化铪中的一种或多种组合，其厚度为1-100nm。
9.根据权利要求1所述的一种氮化镓P沟道器件，其特征在于，所述源电极(07)和所述漏电极(09)的材料是Ni/Au，Ti/Au，Pd/Au或者Ni/Au/Ni中任一种多层金属。
10.根据权利要求1所述的一种氮化镓P沟道器件，其特征在于，所述栅电极(08)材料是Ni/Au，Pt/Au或者Mo/Au中任一种多层金属。
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|---|---|---|---|---|
| CN105932041A (zh) * | 2016-05-06 | 2016-09-07 | 西安电子科技大学 | N面GaN基鳍式高电子迁移率晶体管及制作方法 |
| US20210126118A1 (en) * | 2017-11-28 | 2021-04-29 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Electronic component with a heterojunction provided with an improved buried barrier layer |
| CN113488536A (zh) * | 2021-07-05 | 2021-10-08 | 西交利物浦大学 | 具有衬底电极的增强型的p型氮化镓器件及其制备方法 |
| WO2021237901A1 (zh) * | 2020-05-28 | 2021-12-02 | 中国科学院苏州纳米技术与纳米仿生研究所 | Iii族氮化物凹槽栅常关型p沟道hemt器件及其制作方法 |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105932041A (zh) * | 2016-05-06 | 2016-09-07 | 西安电子科技大学 | N面GaN基鳍式高电子迁移率晶体管及制作方法 |
| US20210126118A1 (en) * | 2017-11-28 | 2021-04-29 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Electronic component with a heterojunction provided with an improved buried barrier layer |
| WO2021237901A1 (zh) * | 2020-05-28 | 2021-12-02 | 中国科学院苏州纳米技术与纳米仿生研究所 | Iii族氮化物凹槽栅常关型p沟道hemt器件及其制作方法 |
| CN113488536A (zh) * | 2021-07-05 | 2021-10-08 | 西交利物浦大学 | 具有衬底电极的增强型的p型氮化镓器件及其制备方法 |
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