CN114551573A - Gallium nitride P channel device - Google Patents
Gallium nitride P channel device Download PDFInfo
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- CN114551573A CN114551573A CN202210174673.3A CN202210174673A CN114551573A CN 114551573 A CN114551573 A CN 114551573A CN 202210174673 A CN202210174673 A CN 202210174673A CN 114551573 A CN114551573 A CN 114551573A
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 98
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 27
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 47
- 230000004888 barrier function Effects 0.000 claims abstract description 32
- 230000010287 polarization Effects 0.000 claims abstract description 8
- 230000000694 effects Effects 0.000 claims abstract description 6
- 239000004047 hole gas Substances 0.000 claims abstract description 5
- 239000000203 mixture Substances 0.000 claims description 22
- 229910052751 metal Inorganic materials 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 20
- 238000002161 passivation Methods 0.000 claims description 13
- 229910052737 gold Inorganic materials 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 4
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000000395 magnesium oxide Substances 0.000 claims description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 2
- 229910003465 moissanite Inorganic materials 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 230000010354 integration Effects 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 230000005533 two-dimensional electron gas Effects 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000035772 mutation Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
- H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
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Abstract
The invention belongs to the technical field of semiconductors, and relates to a gallium nitride P-channel device (P-MOSFET). The AlGaN barrier layer of the gallium nitride P-MOSFET has gradually changed Al components, and two-dimensional hole gas (2DHG) is generated on a P-GaN/AlGaN heterojunction interface by utilizing the polarization effect between the AlGaN barrier layer and the P-GaN channel layer of the gradually changed Al components to form a conductive hole channel, so that the gallium nitride P-MOSFET is formed. The invention has the beneficial effects that: by utilizing the gradient Al component AlGaN barrier layer, the polarization strength between AlGaN and a P-GaN channel layer can be adjusted by adjusting the Al component of each layer in the gradient Al component AlGaN barrier layer, so that the concentration of 2DHG generated by polarization, and the threshold voltage and the current capacity of a gallium nitride P-MOSFET are adjusted; meanwhile, the concentration of two-dimensional electron gas (2DEG) of an AlGaN/GaN heterojunction interface can be adjusted by adjusting the Al component of each layer in the AlGaN barrier layer, so that the monolithic integration of the gallium nitride P-MOSFET and the gallium nitride N-MOSFET is realized.
Description
Technical Field
The invention relates to the technical field of semiconductor devices, in particular to a gallium nitride P-channel device.
Background
The gallium nitride material is used as a third generation wide bandgap semiconductor material, has the advantages of wide bandgap, high power density, stable chemical property, high temperature resistance, corrosion resistance and radiation resistance, and is suitable for high-frequency and high-power application. The 2DEG caused by the polarization effect of the material at the AlGaN/GaN heterojunction interface has the characteristics of high concentration and high mobility, so that the device can realize high switching frequency and low conduction loss. In the last 10 years, the GaN HEMT technology is developed rapidly and matured gradually, and the current GaN HEMT is applied to the important fields of quick charging, data centers, ground electric automobiles and the like. Compared with a Si-based power device, the GaN HEMT has smaller on resistance, smaller parasitic capacitance and lower quick-switching loss. The core performance advantage of the GaN HEMT power device is that the working speed is high, the conversion efficiency is high, and the power density is high. In order to further improve the development of GaN HEMTs in terms of high frequency and low power consumption, the integration technology of full GaN is called the development trend of GaN devices.
However, at present, only mature GaN N-type devices exist, and full GaN monolithic integration can only utilize full N-HEMTs, so that the circuit is complex and the power consumption is high. The CMOS can realize low static power consumption, simplify circuit design and improve IC performance. Therefore, the problems to be solved by GaN full integration are: a gallium nitride P-MOSFET is implemented.
Disclosure of Invention
In view of the above problems, the present invention provides a gallium nitride P-channel device (P-MOSFET), as shown in fig. 1 and 2. AlGaN with gradually changed Al components is used as a barrier layer, and the Al components of the AlGaN barrier layer can be gradually changed or steeply changed. By utilizing the polarization effect between the P-GaN and the AlGaN, 2DHG with high density can be generated on the interface of the P-GaN and AlGaN, and the gallium nitride P-MOSFET is realized. Meanwhile, the current capability and the threshold voltage of the gallium nitride P-MOSFET can be adjusted by adjusting the Al component of each AlGaN layer.
The technical scheme adopted by the invention for solving the technical problems is as follows: a gallium nitride P-channel device comprises a substrate 01, a buffer layer 02 above the substrate 01, an AlGaN barrier layer 03 above the buffer layer 02, and a P-GaN channel layer 04 above the AlGaN barrier layer 03, which are stacked from bottom to top as shown in FIGS. 1 and 2; the P-GaN channel layer 04 and the AlGaN barrier layer 03 form a heterojunction; a passivation layer 05 covers the upper surface of the P-GaN channel layer 04; the groove structure is positioned in the P-GaN channel layer 04, a gate dielectric layer 06 covers the bottom and the side wall of the groove, the gate dielectric layer 06 also extends to cover the upper surface of the passivation layer 05 along the upper surface of the passivation layer 05 towards two sides, gate metal 08 is deposited in the gate dielectric layer 06, and the P-GaN channel layer 04, the gate dielectric layer 06 and the gate metal 08 form an MIS gate structure; one end of the upper surface of the P-GaN channel layer 04 is provided with source ohmic metal 07, and the side surface of the source ohmic metal 07 is in contact with the passivation layer 05 and the gate dielectric layer 06; the other end of the P-GaN channel layer 04 is provided with drain electrode ohmic metal 09, and the side surface of the drain electrode ohmic metal 09 is in contact with the passivation layer 05 and the gate dielectric layer 06; the AlGaN barrier layer 03 is characterized in that the Al composition is gradually changed in a mode that the Al composition is gradually increased from one end close to the buffer layer 02 to one end close to the P-GaN channel layer 04.
Furthermore, the doping concentration of the P-GaN channel layer 04 is 1-5 (x 10)17cm-3) The thickness is 60-120 nm.
Further, the variation range of the Al composition of the graded Al composition AlGaN barrier layer 03 is between 0 and 1. The Al composition may be graded (as shown in fig. 1) or may be abrupt (as shown in fig. 2).
Further, the substrate material 01 may be one of Si, sapphire, SiC, and GaN.
Further, the material of the source electrode 07 and the drain electrode 09 may be any multilayer metal of Ni/Au, Ti/Au, Pd/Au or Ni/Au/Ni.
Further, the gate electrode 08 material may be any multilayer metal of Ni/Au, Pt/Au or Mo/Au.
Further, the passivation layer 05 may be one or more of silicon dioxide, silicon nitride, aluminum oxide, magnesium oxide, hafnium oxide, etc., and may have a thickness of 1-100 nm.
Further, the gate dielectric layer 06 may be one or a combination of silicon dioxide, silicon nitride, aluminum oxide, hafnium oxide, and the like, and may have a thickness of 1-100 nm.
The invention utilizes the AlGaN barrier layer with gradually changed Al components to form a heterojunction with P-GaN, and two-dimensional hole gas accumulation is formed at the interface of the P-GaN/AlGaN heterojunction due to the polarization effect among the heterojunction, and the two-dimensional hole gas forms hole current along the source and drain directions under the combined action of gate, source and drain voltage, thereby forming the gallium nitride P-MOSFET.
The invention has the beneficial effects that: the invention firstly provides a method for realizing a gallium nitride P-MOSFET; secondly, the gallium nitride P-MOSFET using the AlGaN barrier layer with the gradually changed Al composition has an advantage in that the two-dimensional hole gas concentration of the P-GaN/AlGaN heterojunction interface, the two-dimensional electron gas concentration of the AlGaN/GaN heterojunction interface, and the current capability and threshold voltage of the gallium nitride P-MOSFET can be adjusted by adjusting the Al composition at different positions of the AlGaN barrier layer, as shown in table 1, fig. 4, and fig. 5, which provides a technical solution for the implementation of the GaN CMOS.
Drawings
FIG. 1 shows a GaN P-channel device (AlGaN layer Al composition gradient)
FIG. 2 shows a GaN P-channel device (AlGaN layer Al composition mutation)
FIG. 3 is a graph showing the heterojunction energy band of three different Al compositions provided by the embodiment of the present invention
FIG. 4 shows the transfer characteristic curves (linearity) for three different Al compositions provided in the examples of the present invention
FIG. 5 shows the transfer characteristic curves (logarithm) for three different Al compositions according to the example of the present invention
FIG. 6 is a graph showing an output characteristic curve according to an embodiment of the present invention
Detailed Description
The invention is described in detail below with reference to the attached drawing
The invention can realize the gallium nitride P-MOSFET and adjust the current capability and the threshold voltage of the device by adjusting the Al component of the barrier layer. As shown in fig. 4.
Examples
The structure of the present example is shown in fig. 2, and is characterized in that an AlGaN barrier layer with a gradually changed Al composition is used, and the epitaxial structure comprises from bottom to top: the GaN-based light-emitting diode comprises a substrate 01, a buffer layer 02 located above the substrate 01, a gradient Al component AlGaN barrier layer 03 located above the buffer layer 02, and a P-GaN channel layer 04 located above the gradient Al component AlGaN barrier layer 03; the P-GaN channel layer 04 and the AlGaN barrier layer 03 with gradually changed Al components form a heterojunction; a passivation layer 05 covers the upper surface of the P-GaN channel layer 04; the groove gate structure is positioned in the P-GaN channel layer 04, a gate dielectric layer 06 covers the P-GaN groove, gate metal 08 is deposited above the gate dielectric of the groove, and the P-GaN channel layer 04, the gate dielectric layer 06 and the gate metal 08 form an MIS gate structure; the left end of the P-GaN channel layer 04 is provided with a source ohmic metal 07; and the right end of the P-GaN channel layer 04 is provided with a drain ohmic metal 09. In this embodiment, the Al composition is changed in a stepwise manner, and the AlGaN barrier layer 03 having a gradually changing Al composition includes three layers having different Al compositions, where Al is present from bottom to topx2GaN、Alx1GaN and AlxAnd GaN. Table 1 shows that the total thickness of the AlGaN barrier layer is constant (Al)x2GaN、Alx1GaN and AlxGaN thickness is the same), P-GaN/AlGaN heterojunction interface 2DHG and AlGaN/GaN heterojunction interface 2DEG concentration under 7 different Al compositions. The data 03 and 05 show that the total thickness of the AlGaN barrier layer is constant, and the changes of x2 and x have certain effects on the hole concentration and the current and threshold voltage of the gallium nitride P-MOSFET. Proper adjustment of x, x1, x2 can adjust the concentration of 2DHG and 2DEG and nitridationCurrent capability and threshold voltage of gallium P-MOSFET.
The invention utilizes the working principle of a gallium nitride P-MOSFET which takes an AlGaN layer with gradually changed Al components as a barrier layer: the AlGaN barrier layer with the gradually changed Al components and the P-GaN form a P-GaN/AlGaN heterojunction, and 2DHG accumulated on a heterojunction interface moves along the source and drain directions under the action of gate, source and drain voltages to form hole current, so that the gallium nitride P-MOSFET is realized. The strength of heterojunction polarization, the 2DHG concentration, the 2DEG concentration, the current capability and the threshold voltage of the device can be adjusted by adjusting the Al components of all layers of the AlGaN barrier layer. As shown in table 1, the AlGaN layer is divided into three layers, and the Al composition of each layer from top to bottom is x, x1, and the concentration of 2DHG and 2DEG corresponding to x 2.
TABLE 1
The concentration of 2DHG and 2DEG can be optimized by adjusting the content of the Al components x, x1, x 2. The GaN p-FET and GaN n-FET devices can be integrated simultaneously on the same epitaxial wafer.
Claims (10)
1. A gallium nitride P-channel device sequentially comprises a substrate (01), a buffer layer (02) positioned above the substrate (01), an AlGaN barrier layer (03) positioned above the buffer layer (02), and a P-GaN channel layer (04) positioned above the AlGaN barrier layer (03) from bottom to top; the P-GaN channel layer (04) and the AlGaN barrier layer (03) form a heterojunction; a passivation layer (05) covers the upper surface of the P-GaN channel layer (04); the groove structure is characterized by further comprising a groove gate structure, a groove of the groove gate structure is located in the P-GaN channel layer (04), a gate dielectric layer (06) covers the bottom and the side wall of the groove, the gate dielectric layer (06) further extends to cover the upper surface of the passivation layer (05) along the upper surface of the passivation layer (05) towards two sides, gate metal (08) is deposited in the gate dielectric layer (06), and the P-GaN channel layer (04), the gate dielectric layer (06) and the gate metal (08) form an MIS gate structure; one end of the upper surface of the P-GaN channel layer (04) is provided with source electrode ohmic metal (07), and the side surface of the source electrode ohmic metal (07) is in contact with the passivation layer (05) and the gate dielectric layer (06); the other end of the P-GaN channel layer (04) is provided with drain electrode ohmic metal (09), and the side surface of the drain electrode ohmic metal (09) is in contact with the passivation layer (05) and the gate dielectric layer (06); the AlGaN barrier layer (03) is characterized in that the Al composition is gradually changed in a mode that the Al composition is gradually increased from one end close to the buffer layer (02) to one end close to the P-GaN channel layer (04).
2. The GaN P-channel device of claim 1, wherein two-dimensional hole gas is generated at the heterojunction interface thereof to form the hole channel based on polarization effects between the P-GaN channel layer and the AlGaN barrier layer.
3. The GaN P-channel device as claimed in claim 1, wherein the P-GaN channel layer (04) has a doping concentration of 1-5 (x 10)17cm-3)。
4. A gallium nitride P-channel device according to claim 1, wherein said P-GaN channel layer (04) has a thickness of 60-120 nm.
5. The GaN P-channel device according to claim 1, wherein the Al composition of the AlGaN barrier layer (03) varies from 0 to 1, and the Al composition varies linearly or in steps.
6. A gallium nitride P-channel device according to claim 1, wherein the substrate (01) is made of one of Si, sapphire, SiC or GaN.
7. A gan P-channel device according to claim 1, wherein the passivation layer (05) is made of one or more of silicon dioxide, silicon nitride, aluminum oxide, magnesium oxide and hafnium oxide, and has a thickness of 1-100 nm.
8. The GaN P-channel device according to claim 1, wherein the gate dielectric layer (06) is made of one or more of silicon dioxide, aluminum oxide and hafnium oxide, and has a thickness of 1-100 nm.
9. A gallium nitride P-channel device according to claim 1, wherein the material of said source electrode (07) and said drain electrode (09) is any multilayer metal of Ni/Au, Ti/Au, Pd/Au or Ni/Au/Ni.
10. A gan P-channel device according to claim 1, wherein the gate electrode (08) material is a multilayer metal of any of Ni/Au, Pt/Au or Mo/Au.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105932041A (en) * | 2016-05-06 | 2016-09-07 | 西安电子科技大学 | N-face GaN-based fin high electron mobility transistor and manufacturing method |
| US20210126118A1 (en) * | 2017-11-28 | 2021-04-29 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Electronic component with a heterojunction provided with an improved buried barrier layer |
| CN113488536A (en) * | 2021-07-05 | 2021-10-08 | 西交利物浦大学 | Enhanced P-type gallium nitride device with substrate electrode and preparation method thereof |
| WO2021237901A1 (en) * | 2020-05-28 | 2021-12-02 | 中国科学院苏州纳米技术与纳米仿生研究所 | Iii-nitride grooved gate normally-off-type p-channel hemt device and manufacturing method therefor |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105932041A (en) * | 2016-05-06 | 2016-09-07 | 西安电子科技大学 | N-face GaN-based fin high electron mobility transistor and manufacturing method |
| US20210126118A1 (en) * | 2017-11-28 | 2021-04-29 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Electronic component with a heterojunction provided with an improved buried barrier layer |
| WO2021237901A1 (en) * | 2020-05-28 | 2021-12-02 | 中国科学院苏州纳米技术与纳米仿生研究所 | Iii-nitride grooved gate normally-off-type p-channel hemt device and manufacturing method therefor |
| CN113488536A (en) * | 2021-07-05 | 2021-10-08 | 西交利物浦大学 | Enhanced P-type gallium nitride device with substrate electrode and preparation method thereof |
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