CN114545745A - Exposure resist modification process and liquid-phase micro-nano processing equipment - Google Patents
Exposure resist modification process and liquid-phase micro-nano processing equipment Download PDFInfo
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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Abstract
The invention provides an exposure resist modification process and liquid-phase micro-nano processing equipment, wherein the exposure resist modification process comprises the steps of preparing a polymethyl methacrylate (PMMA) film, connecting a polarization passage of the PMMA film, exposing the PMMA film with a pattern to be processed, developing and fixing the processed pattern, blowing out moisture on the surface of the fixed PMMA film with the processed pattern by using a nitrogen gun, and finishing the modification work of the PMMA film. When PMMA is modified, the modification technology-voltage modification of the invention is used, and the effect of electron beam exposure is achieved or equal.
Description
Technical Field
The invention belongs to the technical field of liquid-phase micro-nano processing, and particularly relates to an exposed resist modification process and liquid-phase micro-nano processing equipment.
Background
The micro-nano processing technology refers to the optimized design, processing, assembly, system integration and application technology of components with the scale of submillimeter, micrometer and nanometer, and parts or systems formed by the components. The micro-nano processing technology comprises a photoetching technology, an electron beam exposure technology and an ion beam processing technology. With modern technological advances, lithography further explores smaller dimensions, reaching even the 5nm dimension with recent research, but its implementation requires cumbersome and delicate steps and expensive euv lithography equipment. Since the photolithography technique requires extremely high technical complexity, many problems and obstacles are encountered in the process of advancing the photolithography technique to the micro-nano scale or popularizing and applying the photolithography technique. Due to the needs of real-world production or production in a wider field, it is urgently required that micro-nano processing technology should be developed towards easier use and easier acquisition.
The electron beam exposure technology can be used as an extension of the lithography technology, and the basic principle of the electron beam exposure technology is that the energy of secondary electrons (different from incident electrons) generated in the incident process of an electron beam is similar to the energy of single chemical bond in a resist, so that the resist dosage (PMMA) is promoted to generate chain scission or crosslinking, and the lithography effect is generated.
Both electron beam and lithography can achieve very high precision, the high precision of lithography requires complex equipment and complex technology, and with the same precision (<10nm), and without the need for large quantities, it is evident that electron beam exposure is a more flexible way.
Although the electron beam exposure technique has a high resolution, the above problems such as expensive machine equipment and long iteration period are solved by the method, and in order to overcome the technical problems such as expensive machine equipment and long iteration period, a novel method for modifying the resist is needed to modify the resist without using an electron beam, so as to achieve the effect of "exposure".
Disclosure of Invention
In order to solve the problems, the inventor provides an exposure resist modification process and liquid-phase micro-nano processing equipment through multiple designs and researches.
According to a first aspect of the present invention, there is provided an exposed resist modifying process, comprising the steps of:
step S1, preparing a polymethyl methacrylate (PMMA) film;
step S2, connecting the polarization path of the polymethyl methacrylate (PMMA) film;
step S3, exposing the polymethyl methacrylate film with the pattern to be processed;
step S4, developing and fixing the processing pattern;
and step S5, blowing the water on the surface of the PMMA film with the processing pattern after the fixation by a nitrogen gun to finish the modification work of the PMMA film.
The preparation method of the polymethyl methacrylate (PMMA) film specifically comprises the following steps: placing the silicon chip plated with the gold layer in a spin coater, and uniformly spin-coating polymethyl methacrylate (PMMA) on the silicon chip plated with the gold layer; and placing the silicon wafer coated with the gold layer and spin-coated with polymethyl methacrylate (PMMA) in a hot plate, baking for 20-60 minutes, and baking the solvent in the PMMA solution to leave the PMMA film.
Additionally, connecting the polarization path of the Polymethylmethacrylate (PMMA) film specifically comprises the steps of: connecting an electrode passing through a PMMA film substrate with a negative electrode of a bias power supply, drawing a 2-micron nanometer pipette above the PMMA film by using a drawing instrument, and injecting a buffer solution; then the bias power supply is connected through the silver chloride electrode.
Further, the exposure of the polymethyl methacrylate film with the pattern to be processed specifically comprises the following steps: and controlling the nanopipette to make the nanopipette contact PMMA with a gold layer, applying a voltage less than 2V, keeping a constant voltage action for a certain time, and controlling the nanopipette to move transversely or longitudinally according to the displacement and speed parameters given by the control system.
Further, the developing and fixing of the processing pattern specifically includes the steps of: and (3) placing the silicon wafer with the processing pattern in a developing solution, wherein the ratio of the developing solution to the developing solution is MIBK to IPA (1: 3) (volume ratio), and standing for 5 min.
Additionally, the developing and fixing of the processing pattern specifically includes the steps of: after development, the substrate was removed with tweezers and placed in fixer IPA.
According to a second aspect of the technical scheme of the invention, the liquid phase micro-nano processing equipment is used for an exposure resist modification process, and can realize the graphic processing of a nano film. The liquid phase micro-nano processing equipment comprises a nano liquid transfer device, a three-dimensional motion control system, a nano film, an electrode nano film substrate and a bias power supply.
The nano pipettor is internally injected with a lithium chloride solution as an electronic carrier for liquid-phase micro-nano processing, is connected with the positive electrode of the bias power supply through a silver chloride electrode, and is fixed on a mechanical holder controlled by a three-dimensional motion control system.
Further, the nanopipette is fixed by a mechanical connector; the method comprises the following steps that a nanopipette is obtained by drawing a glass capillary tube through a laser drawing instrument, and the radius of the tip of the nanopipette is any value between 90nm and 3 mu m; the micro-liquid drop at the tip of the nanopipette is contacted with the surface of the processed sample.
Compared with the prior art, the exposed resist modification process adopts a liquid phase processing technology, and has the following technical advantages:
1. compared with the traditional micro-nano processing technology, the exposed resist modification process disclosed by the invention utilizes a liquid-phase processing technology and adopts a solution (lithium chloride solution (1mol/L)) which is very easy to obtain, so that the application field of the technology is expanded.
2. The thickness of the PMMA film in the exposure resist modification process is about 100nm, and the PMMA film is 18-22Mv/m according to the engineering value of PMMA, so that the voltage less than 2V is applied to the PMMA film to give corresponding bond energy to PMMA polymer chains, so that the PMMA film is broken, and the exposure effect is generated.
3. The micro-nano pipettor used in the exposure resist modification process is made of borosilicate materials, the diameter and the taper of a needle point can be customized and drawn according to the parameters of P2000, and the diameter of a common micro-nano pipettor can reach 90nm-3 mu m. Compared with the traditional atomic force probe, the probe has lower cost.
4. In the process of modifying the exposed resist by using a small voltage, the in-situ IV detection can be carried out so as to detect the change of the properties of the PMMA film.
Drawings
FIG. 1 is a schematic diagram of a liquid phase micro-nano processing device according to the present invention;
fig. 2 is a microscope image of a nanopipette;
FIG. 3 is a schematic diagram of the voltage modification;
fig. 4 is a microscopic representation of the cleavage of the backbone C-bonds of the high polymer PMMA under small voltage energy application.
FIG. 5 is a basic flow diagram of an exposed resist modification process according to the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention. Additionally, the scope of the present invention should not be limited to the particular structures or components described below or specific parameters.
The invention provides an exposure resist modification process, which is used for modifying polymethyl methacrylate (PMMA), and the voltage modification technology is used for modifying the PMMA, so that the obtained modified PMMA achieves the effect equivalent to electron beam exposure. The modified PMMA can be used as a typical electron beam exposure resist and has wide application, and the molecular weight of the modified polymethyl methacrylate (PMMA) is from high to low under the shearing of electron beam flow, so that the modified PMMA is easy to dissolve in a developing solution.
The exposed resist modification process adopts novel liquid-phase micro-nano processing equipment for processing, such as the liquid-phase micro-nano processing equipment shown in figure 1. The liquid-phase micro-nano processing equipment can realize the graphical processing of the nano film. The liquid phase micro-nano processing equipment comprises a nano liquid shifter 1, a three-dimensional motion control system 2, a nano film 3, an electrode nano film substrate 4, a bias power supply 5 and a test circuit 6.
The nano pipettor 1 is internally injected with a lithium chloride solution as an electronic carrier for liquid-phase micro-nano processing, is connected with the bias power supply 5 and the positive electrode of the test circuit 6 through a silver chloride electrode, and is fixed on a mechanical holder controlled by the three-dimensional motion control system 2 through a mechanical connecting piece; the nanopipette 1 is obtained by drawing a glass capillary tube by a laser drawing instrument, and the radius of the tip of the nanopipette 1 is any value between 90nm and 3 mu m; the tip micro-droplet of the nanopipette 1 is in contact with the surface of the processed sample.
The three-dimensional motion control system 2 controls the motion of the nanopipette 1 at the nanometer precision, adopts a mechanical fixing mode between the control platform and the controller and the nanopipette 1, is connected through a USB serial communication bus or an Ethernet bus, receives a motion control command sent by the control system, controls a control object to a corresponding position according to a closed-loop control mode of displacement and drive current, and further performs dielectric modification on the film.
The nano film 3 is used as a basic material for dielectric modification, a coating of a resist PMMA is coated on a nano film substrate in a spinning mode through a spin coater, and the thickness of the nano film is any value between 30nm and 2 mu m. And meanwhile, dielectric breakdown micro-nano processing can be performed, and the nano film material is not only PMMA, but also can be graphene, silicon nitride, molybdenum disulfide and other two-dimensional materials.
The electrode nano-film substrate 4 is used as a mechanical support structure of a nano-film material, and the support material is a silicon wafer. The electrode nano film substrate and the nano film 3 are distributed in a sputtering way; the electrode nano-film substrate is respectively extracted as electrodes with the thickness of 10nm and 50nm by sputtering gold and chromium and is connected with a bias power supply 5 and a test circuit 6, and the substrate is fixed by a mechanical clamping base.
The bias power supply 5, in the present control system, can supply an upper voltage limit of 200V. Can provide adjustable bias voltage for dielectric modification, and is connected with the nano thin film substrate 4 and the electrolyte solution of the nano liquid-moving device 1 through the electrodes.
The test circuit 6 is used for detecting the current change condition applied to two ends of the nano-film 4 by the bias power supply 5 in real time, and is connected with the nano-film substrate 4 and the electrolyte solution of the nano-pipette 1 through electrodes.
Fig. 1 is a schematic processing diagram of the liquid-phase micro-nano processing apparatus, and a nanopipette 1, that is, the nanopipette shown in fig. 2 is used to contact an electrolyte solution (liquid droplet) in the nanopipette 1 with a polymethyl methacrylate (PMMA) film through a control system; connecting a silver chloride electrode in the nano pipettor with a bias power supply 5 and a test circuit 6, and leading out an electrode on the side edge of the base of the nano film substrate 4 to be connected with the test circuit 6 and the bias power supply 5; when the lithium chloride solution in the nanopipette 1 contacts the polymethyl methacrylate (PMMA) film, an electric field as shown in fig. 3 is formed at two ends of the PMMA film, so that the polymethyl methacrylate (PMMA) film can be locally modified in a short time, and the voltage provided by the bias power supply 5 is similar to the energy of the electron beam, so that the polymethyl methacrylate (PMMA) is broken, and the polymethyl methacrylate film is thus "exposed". Fig. 3 illustrates the principle of "exposure" at a specific voltage, and the shaded area is the "exposed" area.
The invention provides a modification process of an exposure corrosion inhibitor, which comprises the following steps:
step S1, preparing a polymethyl methacrylate (PMMA) film; and (3) placing the silicon chip plated with the gold layer in a spin coater, and uniformly and spirally coating polymethyl methacrylate (PMMA). And placing in a hot plate, baking for 20 minutes (min) to 60 minutes, preferably 30 min; the solvent in the PMMA solution is baked dry, leaving behind a PMMA film.
Step S2, connecting the polarization path of the polymethyl methacrylate (PMMA) film; connecting the electrode of the substrate 4 passing through the PMMA film 3 with the negative electrode of a bias power supply 5; drawing a 2-micron nanopipette 1 above the PMMA film by using a sutter-P2000 drawing instrument, and injecting a buffer solution (1mol/L lithium chloride); then the silver chloride electrode is connected with a bias power supply 5;
step S3, exposing the polymethyl methacrylate film with the pattern to be processed; the liquid phase micro-nano processing equipment is utilized to control the nanopipette (the space axial precision of the nanopipette is required to reach 10nm), so that the nanopipette is contacted with PMMA with a gold layer, a voltage smaller than 2V is applied, a constant voltage action is kept for a certain time, and the nanopipette is controlled to move transversely or longitudinally according to the displacement and speed parameters given by the control system. Note that at this time, it is not the needle point but the liquid drop of the needle point that contacts the surface of the PMMA thin film, so it is very important to accurately control the nanopipette, and the change of the current in the test circuit 6 can detect the exposure effect in real time during the process. The constant voltage is preferably kept for a certain time, the action time range is 10ms to 1min, the provided exposure energy is stronger along with the increase of the time length, the exposure depth and width can be increased, and the exposure process is determined according to the exposure precision and the PMMA film thickness.
Step S4, developing and fixing the processing pattern; lifting the nanopipette, placing the silicon wafer with the processing pattern in a developing solution, wherein the ratio of the developing solution to the developing solution is MIBK to IPA (1: 3) (volume ratio), and standing for 5min, wherein the developing process is performed in a closed space due to the volatility of the IPA. Fixing is performed using a fixing liquid IPA, and after development, the fixing liquid IPA is removed with tweezers and placed in the fixing liquid IPA. MIBK (methyl isobutyl ketone) is preferably prepared from isopropanol, Cu/Al2O3Or Cu/SiO2-Al2O3The catalyst is prepared by dehydrogenation and dehydration condensation at 160-230 ℃ under normal pressure.
And step S5, blowing the water on the surface of the PMMA film with the processing pattern after the fixation by a nitrogen gun to finish the modification work of the PMMA film.
In the exposed resist modification process of the invention, in order to achieve the result of low voltage modification, firstly, the PMMA film is ensured not to generate dielectric breakdown while being modified, so the thickness of the PMMA film is an important parameter, and the parameters used in the exposed resist modification process of the invention are as follows: (1) 2% PMMA, wherein the concentration configuration parameter is a mass ratio parameter, for example 2g of PMMA particles, the corresponding ethyl lactate solvent is 100g, i.e. the mass ratio is 1: 50; (2) the rotation speed of the spin coater was 3000 rpm. The molecular weight of polymethyl methacrylate (PMMA) described in the above method is 996 Kda.
(3) The thickness of the polymethyl methacrylate (PMMA) film is about 100nm, and the engineering value according to PMMA is 18-22Mv/m, so that the application of a voltage less than 2V can give energy to the corresponding bond energy of the PMMA high molecular chain, so that the PMMA is broken, and the 'exposure' effect is generated.
(4) After "exposure", the silicon wafer with PMMA was placed in a mixed solution of MIBK and IPA 1:3, allowed to stand at normal temperature for 5 minutes, and fixed with an IPA solution fixer.
Fig. 4 is a microscopic view showing the breakdown of the backbone C-bond of the high polymer PMMA under the application of small voltage energy, and in fig. 4, the backbone C-bond of the high polymer PMMA is broken under the application of small voltage energy, so that the molecular weight is reduced, and the low molecular weight PMMA is more easily dissolved in the organic solvent, resulting in the effect of "exposure".
The exposed resist modification process utilizes a liquid-phase processing technology and adopts a solution (lithium chloride solution (1mol/L)) which is easy to obtain, thereby enlarging the application field of the technology. In another embodiment, the thickness of the PMMA film is preferably about 100nm, and PMMA with an engineering value of 18-22Mv/m is adopted, so that the application of a voltage less than 2V can give corresponding bond energy to the PMMA polymer chain, so that the PMMA is broken, and the effect of exposure is generated.
Preferably, the micro-nano pipettor used in the exposure resist modification process is made of borosilicate, the diameter and taper of the needle point of the micro-nano pipettor can be customized and drawn according to the parameters of P2000, and the diameter of a common micro-nano pipettor can reach 90nm-3 μm. Which is less expensive than conventional atomic force probes.
Furthermore, in the process of modifying the exposure resist by using a small voltage, the in-situ IV detection is adopted to detect the change of the properties of the PMMA film, so that the operation complexity is further reduced.
As shown in fig. 5, further, a detailed process flow of the exposed resist modification process is described, which includes the following steps:
step S1, preparing a polymethyl methacrylate (PMMA) film; the method comprises the substeps of S11 sample wafer cleaning, S12 PMMA spin coating, and S13 baking and structure manufacturing.
Cleaning a sample wafer in the substep S11, rinsing the silicon wafer plated with the gold layer in clear water, and drying the silicon wafer by ultrasonic wave after rinsing;
and the substep S12 of spin-coating PMMA, placing the cleaned silicon wafer plated with the gold layer in a spin coater, and uniformly spin-coating polymethyl methacrylate (PMMA).
Substep S13 baking and structure making, placing the silicon wafer uniformly spin-coated with the polymethyl methacrylate (PMMA) gold layer in a hot plate, baking for 20 minutes (min) to 60 minutes, preferably 30 min; the solvent in the PMMA solution is baked dry, leaving behind a PMMA film.
The substep of baking and structure fabrication of S13 further comprises connecting the polarization path of the polymethyl methacrylate (PMMA) film (original step S2), i.e., structure fabrication, connecting the electrode of the substrate 4 passing through the PMMA film 3 with the negative electrode of the bias power supply 5; drawing a 2-micron nanopipette 1 above the PMMA film by using a sutter-P2000 drawing instrument, and injecting a buffer solution (1mol/L lithium chloride); then the silver chloride electrode is connected with a bias power supply 5;
step S3, exposing the polymethylmethacrylate film with the pattern to be processed, which includes the substep S31 of small voltage modification and the substep S32IV of in-situ electrical inspection.
And a substep S31 of small voltage modification, wherein the liquid phase micro-nano processing equipment is utilized to control a nanopipette (the space axial precision of the nanopipette is required to reach 10nm), so that the nanopipette is in contact with PMMA with a gold layer, a voltage smaller than 2V is applied, a constant voltage action is kept for a certain time, and the nanopipette is controlled to move transversely or longitudinally according to the displacement and speed parameters given by a control system.
And a substep S32IV in-situ electrical detection step, based on the small-voltage modification step, detecting whether the small-voltage modification is successful by using an IV in-situ electrical detection method. If the small voltage modification is not successful, continuing to implement the small voltage modification; if the small voltage modification is successful, the subsequent steps, such as the developing step, are entered. The IV in-situ detection is carried out according to the principle that the resistance of the PMMA film changes after the PMMA film is exposed and denatured, the resistance of the constant voltage provided by the bias power supply is changed from the maximum value of the PMMA film to the resistance smaller than M ohm level in the PMMA film exposure process, the resistance is gradually reduced along with the increase of the exposure time, the resistance can generate the current higher than pA level which can be detected by the IV detection circuit under the action of the constant voltage source, and therefore the exposure modification condition of the PMMA film can be fed back in real time according to the change of the current detection value.
In the IV in-situ electrical detection of step S3, the change in current in the test circuit 6 can detect the effect of exposure in real time. The constant voltage is preferably kept for a certain time, the action time range is 10ms to 1min, the provided exposure energy is stronger along with the increase of the time length, the exposure depth and width can be increased, and the exposure process is determined according to the exposure precision and the PMMA film thickness.
The step S4 includes a developing step and a step of checking the developing effect in the developing and fixing of the processed pattern; the developing step is as follows: lifting the nanopipette, placing the silicon wafer with the processing pattern in a developing solution, wherein the ratio of the developing solution to the developing solution is MIBK to IPA (1: 3) (volume ratio), and standing for 5min, wherein the developing process is performed in a closed space due to the volatility of the IPA.
The step of checking the development effect comprises the steps of checking whether the developed processing pattern is fixed and has the set effect, and if the designed target is achieved or reached, fixing the PMMA film with the processing pattern by using a fixing technology: fixing is performed using a fixing liquid IPA, and after development, the fixing liquid IPA is removed with tweezers and placed in the fixing liquid IPA. MIBK (methyl isobutyl ketone) is preferably ortho-isopropanolMaterial, Cu/Al2O3Or Cu/SiO2-Al2O3The catalyst is prepared by dehydrogenation and dehydration condensation at 160-230 ℃ under normal pressure. If the design goal is not met or not met, the process returns to the sample cleaning step and the exposed resist modification process is restarted.
After the designed object is obtained or reached, the modification object is realized, that is, the PMMA film with the processing pattern after being fixed is blown with a nitrogen gun to remove the water on the surface, thereby completing the modification work of the PMMA film.
The exposed resist modifying technique of the present invention uses PMMA which can be used as a resist for electron beam exposure. The exposed resist modification technology is used as a high-precision mask-free micro-nano processing technology and is widely applied, and the molecular weight of polymethyl methacrylate (PMMA) is changed from high to low under the shearing of electron beams, so that the polymethyl methacrylate (PMMA) is dissolved in a developing solution. When PMMA is modified, the modification technology-voltage modification of the invention is used, and the effect of electron beam exposure is achieved or equal.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are also included in the scope of the present invention. It will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present invention as defined by the following claims.
Claims (10)
1. An exposed resist modifying process, comprising the steps of:
step S1, preparing a polymethyl methacrylate (PMMA) film;
step S2, connecting the polarization path of the polymethyl methacrylate (PMMA) film;
step S3, exposing the polymethyl methacrylate film with the pattern to be processed;
step S4, developing and fixing the processing pattern;
in step S5, the PMMA thin film with the processing pattern after the fixing is subjected to a nitrogen gun to blow off moisture on the surface, thereby completing the modification of the PMMA thin film.
2. The exposed resist modifying process according to claim 1, wherein preparing a Polymethylmethacrylate (PMMA) film specifically comprises the steps of: placing the silicon chip plated with the gold layer in a spin coater, and uniformly spin-coating polymethyl methacrylate (PMMA) on the silicon chip plated with the gold layer; and placing the silicon wafer coated with the gold layer and spin-coated with polymethyl methacrylate (PMMA) in a hot plate, baking for 20-60 minutes, and baking the solvent in the PMMA solution to leave the PMMA film.
3. The exposed resist modifying process of claim 1, wherein connecting the polarization pathways of the Polymethylmethacrylate (PMMA) film specifically comprises the steps of: connecting an electrode passing through a PMMA film substrate with a negative electrode of a bias power supply, drawing a 2-micron nanometer pipette above the PMMA film by using a drawing instrument, and injecting a buffer solution; then the bias power supply is connected through the silver chloride electrode.
4. The exposed resist modifying process according to claim 3, wherein the exposing the polymethylmethacrylate film with the pattern to be processed specifically comprises the steps of: and controlling the nanopipette to contact the PMMA with the gold layer, applying a voltage less than 2V, keeping the constant voltage action for a certain time, and controlling the nanopipette to move transversely or longitudinally according to the displacement and speed parameters given by the control system.
5. The exposed resist modifying process according to claim 1, wherein the developing and fixing of the processing pattern specifically comprises the steps of: and (3) placing the silicon wafer with the processing pattern in a developing solution, wherein the ratio of the developing solution to the developing solution is MIBK to IPA (1: 3) (volume ratio), and standing for 5 min.
6. The exposed resist modifying process according to claim 1, wherein the developing and fixing of the processing pattern specifically comprises the steps of: after development, the substrate was removed with tweezers and placed in fixer IPA.
7. The liquid phase micro-nano processing equipment is characterized by being used for an exposure resist modification process, and the liquid phase micro-nano processing equipment can realize the graphical processing of a nano film.
8. The liquid-phase micro-nano processing equipment according to claim 7, wherein the liquid-phase micro-nano processing equipment comprises a nano pipette, a three-dimensional motion control system, a nano film, an electrode nano film substrate and a bias power supply.
9. The liquid phase micro-nano processing equipment according to claim 8, wherein a lithium chloride solution is injected into the nanopipette as an electronic carrier for liquid phase micro-nano processing, the nanopipette is connected with the positive electrode of the bias power supply through a silver chloride electrode, and the nanopipette is fixed on a mechanical gripper controlled by a three-dimensional motion control system.
10. The liquid-phase micro-nano processing equipment according to claim 9, wherein the nanopipette is fixed by a mechanical connector; the method comprises the following steps that a nanopipette is obtained by drawing a glass capillary tube through a laser drawing instrument, and the radius of the tip of the nanopipette is any value between 90nm and 3 mu m; the micro-liquid drop at the tip of the nanopipette is contacted with the surface of the processed sample.
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