CN114522517B - Semiconductor waste gas treatment equipment and control method and device thereof - Google Patents
Semiconductor waste gas treatment equipment and control method and device thereof Download PDFInfo
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- CN114522517B CN114522517B CN202210028907.3A CN202210028907A CN114522517B CN 114522517 B CN114522517 B CN 114522517B CN 202210028907 A CN202210028907 A CN 202210028907A CN 114522517 B CN114522517 B CN 114522517B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/26—Drying gases or vapours
- B01D53/265—Drying gases or vapours by refrigeration (condensation)
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
- F25D—REFRIGERATORS; COLD ROOMS; ICE-BOXES; COOLING OR FREEZING APPARATUS NOT OTHERWISE PROVIDED FOR
- F25D31/00—Other cooling or freezing apparatus
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28C—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA COME INTO DIRECT CONTACT WITHOUT CHEMICAL INTERACTION
- F28C3/00—Other direct-contact heat-exchange apparatus
- F28C3/06—Other direct-contact heat-exchange apparatus the heat-exchange media being a liquid and a gas or vapour
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Abstract
The invention relates to the field of waste gas treatment, and provides semiconductor waste gas treatment equipment and a control method and device thereof. The semiconductor waste gas treatment equipment comprises a waste gas inlet; an exhaust gas outlet in fluid communication with the exhaust gas inlet; the spraying device is arranged between the waste gas inlet and the waste gas outlet to spray and cool the waste gas; the cold source is arranged between the spraying device and/or the spraying device and the waste gas outlet. This semiconductor exhaust-gas treatment equipment can reduce the temperature of the liquid that sprays that spray set sprays out through set up the cold source in spray set's position department, and then can reduce the temperature of waste gas. Through set up the cold source between spray set and exhaust outlet, can make the cold source cool down to the region between spray set and the exhaust outlet, and then can reduce the temperature through spray set's waste gas, can also carry out condensation treatment in advance to the region between spray set and the exhaust outlet simultaneously, prevent that waste gas from forming the comdenstion water after getting into the blast pipe.
Description
Technical Field
The invention relates to the field of waste gas treatment, in particular to semiconductor waste gas treatment equipment and a control method and device thereof.
Background
The humidity of the exhaust end of semiconductor waste gas treatment equipment, especially waste gas treatment equipment with a spraying structure at the tail end of the equipment is mostly 80% -90%, so that the treated waste gas can be mixed with water vapor and discharged into an exhaust pipe. Since the semiconductor waste gas treatment equipment is continuously operated for 24 hours, water vapor is continuously discharged in the exhaust pipe, and meanwhile, the discharge temperature is higher than the gas temperature in the exhaust pipe, so that the water vapor is condensed to form liquid water to be accumulated in the exhaust pipe.
The condensed water accumulated in the exhaust pipe can dissolve the acid gas in the exhaust gas, so that acid liquor is formed to corrode the exhaust pipe, leakage is caused, and safety accidents are caused. Meanwhile, the liquid accumulated in the exhaust pipe is continuously increased, so that the exhaust gas is not smoothly discharged, blockage is formed, abnormal shutdown of equipment is caused, and the production is influenced.
Disclosure of Invention
The present invention has been made to solve at least one of the problems occurring in the related art. Therefore, the invention provides semiconductor waste gas treatment equipment which can reduce the temperature of a waste gas outlet and avoid the formation of condensed water in an exhaust pipe.
The invention also provides a control method of the semiconductor waste gas treatment equipment.
The invention also provides a control device of the semiconductor waste gas treatment equipment.
An embodiment of the present invention provides a semiconductor waste gas treatment apparatus, including:
an exhaust gas inlet;
an exhaust gas outlet in fluid communication with the exhaust gas inlet;
the spraying device is arranged between the waste gas inlet and the waste gas outlet to spray and cool the waste gas;
the cold source is arranged between the spraying device and/or the spraying device and the waste gas outlet.
According to the semiconductor waste gas treatment equipment provided by the embodiment of the first aspect of the invention, the cold source is arranged at the position of the spraying device, so that the temperature of the spraying liquid sprayed by the spraying device can be reduced, and further, the temperature of the waste gas can be reduced. Through set up the cold source between spray set and exhaust outlet, can make the cold source cool down to the region between spray set and the exhaust outlet, and then can reduce the temperature through spray set's waste gas, can also carry out condensation treatment in advance to the region between spray set and the exhaust outlet simultaneously, prevent that waste gas from forming the comdenstion water after getting into the blast pipe.
According to one embodiment of the present invention, the cool source includes a first cool source and a second cool source;
the first cold source is arranged in the spraying device, and the second cold source is arranged between the spraying device and the waste gas outlet.
According to one embodiment of the invention, the first cold source comprises a first air source, a first valve body and a first air gun which are connected in sequence;
a spiral pipe is arranged in the spraying device, and the first air gun is communicated with the spiral pipe;
a plurality of first nozzles are arranged on the spraying device, and the first nozzles are communicated with the spiral pipe.
According to one embodiment of the invention, the second cold source comprises a second air source, a second valve body and a second air gun which are connected in sequence;
the semiconductor waste gas treatment equipment further comprises an air blowing pipe communicated with the second air gun, the air blowing pipe is arranged between the spraying device and the waste gas outlet, and the air blowing pipe is provided with a plurality of second nozzles.
According to an embodiment of the present invention, further comprising an exhaust pipe communicating with the exhaust gas outlet;
the waste gas outlet is provided with a first temperature detection piece and a humidity detection piece;
a second temperature detection piece is arranged in the exhaust pipe;
the cold source is suitable for starting and stopping based on at least one of the first temperature detection piece, the humidity detection piece and the second temperature detection piece.
According to one embodiment of the invention, the spraying device comprises a pumping element and a frequency converter which are electrically connected, the frequency converter being adapted to adjust the operating frequency of the pumping element on the basis of at least one of the first temperature detection element, the humidity detection element and the second temperature detection element.
In a second aspect, the embodiment of the invention provides a control method for a semiconductor exhaust gas treatment device, which comprises the following steps:
acquiring a first temperature value of the exhaust gas outlet;
acquiring a second temperature value in the exhaust pipe;
and determining the working state of the cold source and/or the spraying device in response to the first temperature value being different from the second temperature value.
According to the control method of the semiconductor waste gas treatment equipment provided by the embodiment of the second aspect of the invention, the first temperature value of the waste gas outlet and the second temperature value in the exhaust pipe are obtained, and the first temperature value is compared with the second temperature value, so that the adjustment of the working state of the cold source and/or the spraying device can be flexibly realized, the temperature of the waste gas can be reduced, the possibility of condensation after entering the exhaust pipe can be reduced, and the effects of saving energy consumption and flexible control can be achieved.
According to an embodiment of the present invention, the step of determining the operating state of the cool source and/or the spray device in response to the first temperature value being different from the second temperature value includes:
and determining that the cold source is started and/or the spraying device operates in a frequency reduction mode in response to the first temperature value being greater than the second temperature value and less than the upper temperature limit value.
According to an embodiment of the present invention, the step of determining the operating state of the cool source and/or the spray device in response to the first temperature value being different from the second temperature value includes:
and responding to the fact that the first temperature value is smaller than the second temperature value and larger than a temperature lower limit value, and determining that the cold source is kept closed and/or the spraying device operates at power frequency.
According to an embodiment of the invention, the step of obtaining the first temperature value of the exhaust outlet comprises:
acquiring an actual temperature value of the exhaust gas outlet;
determining a preset temperature interval corresponding to the actual temperature value;
and acquiring a maximum preset temperature value corresponding to the preset temperature interval as the first temperature value.
According to an embodiment of the present invention, the step of obtaining the first temperature value of the exhaust gas outlet further includes:
acquiring an actual humidity value of the exhaust gas outlet;
determining a preset humidity interval corresponding to the actual humidity value;
and acquiring a maximum preset temperature value corresponding to a maximum preset humidity value corresponding to the preset humidity interval as the first temperature value.
According to an embodiment of the present invention, further comprising:
and determining that the first temperature value is greater than the upper temperature limit value or less than the lower temperature limit value, and stopping the semiconductor waste gas treatment equipment.
An embodiment of a third aspect of the present invention provides a control device of a semiconductor exhaust gas treatment apparatus, including:
the first acquisition module is used for acquiring a first temperature value of the exhaust gas outlet;
the second acquisition module is used for acquiring a second temperature value in the exhaust pipe;
and the control module is used for responding to the difference between the first temperature value and the second temperature value and determining the working state of the cold source and/or the spraying device.
According to the control device of the semiconductor waste gas treatment equipment provided by the embodiment of the third aspect of the invention, the first temperature value of the waste gas outlet and the second temperature value of the exhaust pipe are obtained, and the first temperature value is compared with the second temperature value, so that the adjustment of the working state of the cold source and/or the spraying device can be flexibly realized, the temperature of the waste gas can be reduced, the possibility of condensation after entering the exhaust pipe is reduced, and the effects of saving energy consumption and flexibly controlling can be achieved.
An embodiment of a fourth aspect of the present invention provides an electronic device, including a memory, a processor, and a computer program stored on the memory and executable on the processor, wherein the processor implements the steps of the control method of the semiconductor exhaust gas treatment device described above when executing the program.
A fifth aspect of the present invention is embodied in a non-transitory computer-readable storage medium having stored thereon a computer program that, when executed by a processor, implements the steps of the control method of the semiconductor exhaust gas treatment device described above.
A sixth aspect of the present invention is a computer program product comprising a computer program that, when executed by a processor, implements the steps of the control method of a semiconductor exhaust gas treatment device described above.
One or more technical solutions in the present invention have at least one of the following technical effects:
according to the semiconductor waste gas treatment equipment provided by the embodiment of the first aspect of the invention, the cold source is arranged at the position of the spraying device, so that the temperature of the spraying liquid sprayed by the spraying device can be reduced, and further, the temperature of the waste gas can be reduced. Through set up the cold source between spray set and exhaust outlet, can make the cold source cool down to the region between spray set and the exhaust outlet, and then can reduce the temperature through spray set's waste gas, can also carry out condensation treatment in advance to the region between spray set and the exhaust outlet simultaneously, prevent that waste gas from forming the comdenstion water after getting into the blast pipe.
According to the control method of the semiconductor waste gas treatment equipment provided by the embodiment of the second aspect of the invention, the first temperature value of the waste gas outlet and the second temperature value of the exhaust pipe are obtained, and the first temperature value is compared with the second temperature value, so that the adjustment of the working state of the cold source and/or the spraying device can be flexibly realized, the temperature of the waste gas can be reduced, the possibility of condensation after entering the exhaust pipe can be reduced, and the effects of saving energy consumption and flexibly controlling can be achieved.
According to the control device of the semiconductor waste gas treatment equipment provided by the embodiment of the third aspect of the invention, the first temperature value of the waste gas outlet and the second temperature value of the exhaust pipe are obtained, and the first temperature value is compared with the second temperature value, so that the adjustment of the working state of the cold source and/or the spraying device can be flexibly realized, the temperature of the waste gas can be reduced, the possibility of condensation after entering the exhaust pipe is reduced, and the effects of saving energy consumption and flexibly controlling can be achieved.
Drawings
Fig. 1 is a schematic structural view of a semiconductor exhaust gas treatment apparatus provided in an embodiment of the present invention;
fig. 2 is a schematic configuration diagram of a control method of a semiconductor exhaust gas treatment device according to an embodiment of the present invention;
fig. 3 is a schematic configuration diagram of a control device of a semiconductor exhaust gas treatment apparatus according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of an electronic device according to an embodiment of the present invention.
Reference numerals:
400. an exhaust gas inlet; 402. an exhaust gas outlet; 404. a spraying device; 406. a first cold source; 408. a second cold source; 410. a first gas source; 412. a first valve body; 414. a first air gun; 416. a spiral tube; 418. a first nozzle; 420. a second gas source; 422. a second valve body; 424. a second air gun; 426. an air blowing pipe; 428. a second nozzle; 429. an exhaust pipe; 430. a first temperature detection member; 432. a humidity detection member; 434. a second temperature detection member; 436. a pumping element; 438. a frequency converter; 440. a first acquisition module; 442. a second acquisition module; 444. a control module; 446. a processor; 448. a communication interface; 450. a memory; 452. a communication bus.
Detailed Description
The embodiments of the present invention will be described in further detail with reference to the drawings and examples. The following examples are intended to illustrate the invention but are not intended to limit the scope of the invention.
In the description of the embodiments of the present invention, it should be noted that the terms "central", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the embodiments of the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the embodiments of the present invention, it should be noted that, unless explicitly stated or limited otherwise, the terms "connected" and "connected" are to be interpreted broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; may be directly connected or indirectly connected through an intermediate. Specific meanings of the above terms in the embodiments of the present invention can be understood in specific cases by those of ordinary skill in the art.
In embodiments of the invention, unless expressly stated or limited otherwise, a first feature may be "on" or "under" a second feature such that the first and second features are in direct contact, or the first and second features are in indirect contact via an intermediary. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of an embodiment of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Moreover, various embodiments or examples and features of various embodiments or examples described in this specification can be combined and combined by one skilled in the art without being mutually inconsistent.
As shown in fig. 1, an embodiment of the first aspect of the present invention provides a semiconductor waste gas treatment device, which includes a waste gas inlet 400, a waste gas outlet 402, a spraying device 404 and a cooling source; wherein the exhaust gas outlet 402 is in fluid communication with the exhaust gas inlet 400; the spraying device 404 is arranged between the exhaust gas inlet 400 and the exhaust gas outlet 402 to spray and cool the exhaust gas; the cold source is installed between the spray device 404 and/or the spray device 404 and the exhaust outlet 402.
According to the semiconductor waste gas treatment equipment provided by the embodiment of the first aspect of the invention, the cold source is arranged at the position of the spraying device 404, so that the temperature of the spraying liquid sprayed by the spraying device 404 can be reduced, and further, the temperature of the waste gas can be reduced. Through set up the cold source between spray set 404 and exhaust outlet 402, can make the cold source cool down to the region between spray set 404 and the exhaust outlet 402, and then can reduce the temperature through spray set 404's waste gas, can also carry out condensation treatment in advance to the region between spray set 404 and the exhaust outlet 402 simultaneously, prevent that waste gas from forming the comdenstion water after getting into blast pipe 429.
With continued reference to fig. 1, the exhaust gas enters the semiconductor exhaust gas treatment device through the exhaust gas inlet 400, and is then sprayed by the spraying device 404 to achieve a certain degree of temperature reduction. Of course, in this process, the acid gas in the exhaust gas can be removed by the spraying device 404, so as to prevent the acid gas in the exhaust gas from corroding the exhaust pipe 429 after entering the exhaust pipe 429.
Correspondingly, a containing cavity can be provided, and the containing cavity is provided with a waste gas inlet 400 and a waste gas outlet 402, respectively, and a water tank can be provided at the bottom of the containing cavity to serve as a water source for the spraying device 404.
The cold source is installed on the spraying device 404, and the temperature of the spraying liquid sprayed by the spraying device 404 can be reduced by installing the cold source on the spraying device 404, and when the spraying liquid with lower temperature contacts with the waste gas, the temperature of the waste gas can be reduced.
A cold source can be installed between the spraying device 404 and the exhaust gas outlet 402, the temperature of the exhaust gas passing through the spraying device 404 can be reduced by installing the cold source between the spraying device 404 and the exhaust gas outlet 402, meanwhile, cold air purging can be performed on an area between the spraying device 404 and the exhaust gas outlet 402, and therefore the area between the spraying device 404 and the exhaust gas outlet 402 can be guaranteed to have a certain low-temperature environment, and when the exhaust gas passes through the area, the temperature of the exhaust gas can be reduced.
Or a cold source can be arranged between the spraying device 404 and the exhaust outlet 402, so that the cooling efficiency of the exhaust can be further improved.
In the embodiment of the invention, the cold source can adopt different forms of liquid cooling, air cooling and the like.
Continuing to refer to FIG. 1, according to one embodiment of the invention, the heat sink includes a first heat sink 406 and a second heat sink 408; the first cool source 406 is installed at the shower device 404, and the second cool source 408 is installed between the shower device 404 and the exhaust outlet 402.
It is understood that in the embodiment of the present invention, a cooling source is disposed between the spraying device 404 and the exhaust outlet 402 and between the spraying device 404 and the exhaust outlet 402. Accordingly, the cool source is composed of a first cool source 406 and a second cool source 408. Through all setting up the cold source between spray set 404 and exhaust outlet 402, can make by the temperature of exhaust outlet 402 exhaust low enough, avoided taking place the condition that the comdenstion water appears after the heat exchange with the waste gas in blast pipe 429, and then can avoid appearing blockking up, the not smooth scheduling problem of exhaust in blast pipe 429.
It should be noted that the number of the first cool source 406 and the second cool source 408 is not limited in particular, for example, if the flow rate of the exhaust outlet 402 is larger, the number of the first cool source 406 and the second cool source 408 may be increased appropriately.
Referring to fig. 1, according to an embodiment of the present invention, the first cool source 406 includes a first gas source 410, a first valve body 412 and a first gas gun 414 which are connected in sequence; the spraying device 404 is provided with a spiral pipe 416, and the first air gun 414 is communicated with the spiral pipe 416; the spraying device 404 is provided with a plurality of first nozzles 418, and the plurality of first nozzles 418 are communicated with the spiral pipe 416.
Through set up spiral pipe 416 in spray set 404 to communicate spiral pipe 416 and first air gun 414, make during first air gun 414 spun cold air can enter into spiral pipe 416, increased the area of contact of cold air and the spray liquid in spray set 404, the circulation route of extension cold air, and then make cold air and the spray liquid in spray set 404 can take place abundant heat exchange, and then can reduce the temperature of spray liquid in spray set 404. The first valve body 412 may use a solenoid valve, a check valve, etc. to notify the start and stop of the first air gun 414 when the first valve body 412 receives a control signal.
In order to ensure that the low-temperature spray liquid can perform sufficient heat exchange with the exhaust gas, the spray device 404 is further provided with a plurality of first nozzles 418, so that when the spray liquid which performs heat exchange with the cold air is sprayed out through the first nozzles 418, the spray liquid can be in sufficient contact with the exhaust gas, and the temperature of the exhaust gas can be effectively reduced.
According to an embodiment of the present invention, the second cool source 408 includes a second gas source 420, a second valve 422, and a second gas gun 424 connected in series; the semiconductor waste gas treatment equipment further comprises a gas blowing pipe 426 communicated with the second air gun 424, the gas blowing pipe 426 is arranged between the spraying device 404 and the waste gas outlet 402, and the gas blowing pipe 426 is provided with a plurality of second nozzles 428.
Referring to fig. 1, the blowing pipe 426 is inserted into the position of the exhaust outlet 402, and it should be noted that, in order to perform a complete cooling process on the exhaust gas flowing out of the semiconductor exhaust gas processing apparatus, the length of the blowing pipe 426 may be equivalent to the pipe diameter at the installation position. In other words, the exhaust gas discharged through the exhaust gas outlet 402 is discharged to the exhaust pipe 429 only after being cooled by the blowing pipe 426.
Referring to FIG. 1, according to one embodiment of the present invention, an exhaust pipe 429 is further included that communicates with the exhaust gas outlet 402; the exhaust outlet 402 is provided with a first temperature detecting member 430 and a humidity detecting member 432; a second temperature detection element 434 is provided in the exhaust pipe 429; the cool source is adapted to be turned on or off based on at least one of the first temperature sensing member 430, the humidity sensing member 432 and the second temperature sensing member 434.
In the embodiment of the present invention, in order to realize intelligent control, the first temperature detection element 430 and the humidity detection element 432 are provided in the exhaust outlet 402, so that the exhaust temperature and the exhaust humidity of the exhaust outlet 402 can be detected in real time, and the second temperature detection element 434 is provided in the exhaust pipe 429, so that the exhaust temperature in the exhaust pipe 429 can be detected in real time.
Specifically, after the exhaust temperature value detected by the first temperature detecting element 430 is greater than the exhaust temperature value detected by the second temperature detecting element 434, it indicates that the temperature of the exhaust gas needs to be reduced, and at this time, the first heat sink 406 and the second heat sink 408 may be turned on to reduce the temperature of the exhaust gas.
When the exhaust temperature value detected by the first temperature detecting element 430 is less than or equal to the exhaust temperature value detected by the second temperature detecting element 434, it indicates that the temperature of the exhaust is within a reasonable temperature range, and at this time, the first heat sink 406 and the second heat sink 408 are turned off to reduce energy consumption.
Similarly, after humidity detection piece 432 detected that exhaust gas humidity exceeded the humidity threshold value that sets for, it was great to prove the humidity of exhaust gas, can cool down in order to reduce the humidity of exhaust gas through the mode of opening first cold source 406, second cold source 408 this moment.
According to one embodiment of the present invention, the spraying device 404 includes a pumping member 436 and a frequency converter 438 electrically connected, and the frequency converter 438 is adapted to adjust an operating frequency of the pumping member 436 based on at least one of the first temperature detecting member 430, the humidity detecting member 432, and the second temperature detecting member 434.
The pumping member 436 mentioned here may be a water pump, and the operation mode of the shower apparatus 404 can be flexibly adjusted depending on the temperature, humidity of the exhaust gas, or the temperature in the exhaust pipe 429 by electrically connecting the frequency converter 438 to the water pump and setting the frequency converter 438 in a form of acting based on at least one of the first temperature detecting member 430, the humidity detecting member 432, and the second temperature detecting member 434. For example, when the temperature of the exhaust gas detected by the first temperature detecting element 430 is greater than the temperature of the exhaust gas detected by the second temperature detecting element 434, which indicates that the temperature of the exhaust gas needs to be decreased, the pumping element 436 is driven by the frequency converter 438 to perform a frequency reduction operation to decrease the humidity of the exhaust gas.
When the humidity detection part 432 detects that the humidity of the exhaust gas exceeds the set humidity threshold, it is proved that the humidity of the exhaust gas is relatively large, and at this time, the humidity of the exhaust gas can be reduced by reducing the operating frequency of the pumping part 436.
As shown in fig. 2, an embodiment of a second aspect of the present invention provides a control method based on the above semiconductor exhaust gas treatment device, including:
in response to the first temperature value being different from the second temperature value, an operating state of the cold source and/or the spray device 404 is determined, step 300.
According to the control method of the semiconductor exhaust gas treatment equipment provided by the embodiment of the second aspect of the invention, the first temperature value of the exhaust gas outlet 402 and the second temperature value in the exhaust pipe 429 are obtained, and the first temperature value is compared with the second temperature value, so that the adjustment of the working state of the cold source and/or the spraying device 404 can be flexibly realized, the temperature of the exhaust gas can be reduced, the possibility of condensation after entering the exhaust pipe 429 can be reduced, and the effects of saving energy consumption and flexibly controlling can be achieved.
In step 100, a first temperature value of the exhaust outlet 402 may be obtained by a first temperature sensor.
In an embodiment of the present invention, the first temperature value may be obtained in at least three different forms:
the acquisition method is as follows:
in this manner, the first temperature value of the exhaust outlet 402 may be directly acquired by the first temperature sensor.
And the second acquisition mode comprises the following steps:
in this acquisition manner, as shown in table 1, an actual temperature value of the exhaust gas outlet 402 may be acquired by the first temperature sensor; after the actual temperature value of the exhaust gas outlet 402 is obtained, determining a preset temperature interval corresponding to the actual temperature value based on the actual temperature value; and after the preset temperature interval is determined, acquiring the maximum preset temperature value in the preset temperature interval as a first temperature value.
For example, if the actual temperature value of the exhaust outlet 402 obtained by the first temperature sensor is 26 degrees, it is determined that 26 degrees matches a preset temperature range of 25 degrees to 30 degrees in the preset temperature range stored in advance, and then the maximum preset temperature value of 30 degrees in the preset temperature range is called as the first temperature value.
TABLE 1
The acquisition mode is three:
in this way, as shown in table 2, on the basis of the second obtaining method, the humidity value detected by the humidity detecting part 432 can be combined to determine the first temperature value.
For example, if the actual temperature value of the exhaust gas outlet 402 acquired by the first temperature sensor is 26 degrees, it is determined that 26 degrees matches a preset temperature range of 25 degrees to 30 degrees in a preset temperature range stored in advance; meanwhile, if the actual humidity value detected by the humidity detection part 432 is 86%, it is determined that 86% matches a preset humidity range of 85% to 90% in the preset humidity range stored in advance, and then a maximum preset temperature value of 30 degrees corresponding to the preset temperature range of 25 degrees to 30 degrees and the preset humidity range of 85% to 90% is taken as a first temperature value.
By obtaining the first temperature value, the adjustment of the operating frequency of the cooling source and/or the spraying device 404 can be more accurately achieved, and it is further ensured that the exhaust gas does not form condensed water in the exhaust pipe 429.
TABLE 2
In step 200, a second temperature value in the exhaust pipe 429 may be obtained by the second temperature detecting member 434.
In step 300, an operating state of the heat sink and/or the spray device 404 is determined in response to the first temperature value being different from the second temperature value.
Specifically, in step 300, the following different situations can be classified:
the first condition is as follows:
in response to the first temperature value being greater than the second temperature value and less than the upper temperature value, it is determined that the cold source is on and/or the spray device 404 is operating down.
In this case, when the first temperature value is greater than the second temperature value, that is, when the exhaust temperature is greater than the temperature in the exhaust pipe 429 and less than the upper temperature limit value, the first cool source 406 and the second cool source 408 are turned on to cool the exhaust. At this time, the spraying device 404 may also reduce the frequency of the exhaust gas to reduce the humidity of the exhaust gas, thereby preventing the exhaust gas from entering the exhaust pipe 429 to form condensed water. Of course, in this case, after the first cool source 406 and the second cool source 408 are turned on, the spray device 404 can be operated down or operated at power frequency as long as the temperature of the exhaust gas can be lowered.
And a second condition:
in response to the first temperature value being less than the second temperature value and greater than the lower temperature limit, it is determined that the cold source remains off and/or the spray device 404 is operating at power frequency.
In this case, when the first temperature value is less than the second temperature value, that is, when the exhaust gas temperature is less than the temperature in the exhaust pipe 429 and greater than the lower temperature limit value, the first heat sink 406 and the second heat sink 408 may be turned off to reduce energy consumption. At this time, the spraying device 404 can also be adjusted from the frequency reduction mode to the power frequency mode. Of course, in this case, after the first cool source 406 and the second cool source 408 are turned off, the spray device 404 may continue to operate in a frequency-down state to increase the humidity of the exhaust gas.
And a third situation:
in this case, when the first temperature value reaches the second temperature value, that is, when the exhaust gas temperature reaches the temperature in the exhaust pipe 429, the first cool source 406 and the second cool source 408 may be turned off to reduce energy consumption. At this time, the spraying device 404 can also be adjusted from the frequency reduction mode to the power frequency mode.
Case four:
in this case, when the first temperature value is greater than the upper temperature limit value or less than the lower temperature limit value, the semiconductor exhaust gas treatment apparatus is stopped.
As shown in fig. 3, a third aspect of the embodiment of the present invention provides a control device for a semiconductor exhaust gas treatment device, which includes:
a first obtaining module 440 for obtaining a first temperature value of the exhaust outlet 402;
a second obtaining module 442, configured to obtain a second temperature value in the exhaust pipe 429;
a control module 444 for determining an operational state of the heat sink and/or the spray device 404 in response to the first temperature value being different from the second temperature value.
According to the control device of the semiconductor exhaust gas treatment equipment provided by the embodiment of the third aspect of the invention, the first temperature value of the exhaust gas outlet 402 and the second temperature value in the exhaust pipe 429 are obtained, and the first temperature value is compared with the second temperature value, so that the adjustment of the working state of the cold source and/or the spraying device 404 can be flexibly realized, the temperature of the exhaust gas can be reduced, the possibility of condensation after entering the exhaust pipe 429 can be reduced, and the effects of saving energy consumption and flexibly controlling can be achieved.
Fig. 4 illustrates a physical structure diagram of an electronic device, which may include, as shown in fig. 4: processor 446 (processor), communication Interface 448 (Communications Interface), memory 450 (memory), and communication bus 452, wherein processor 446, communication Interface 448, and memory 450 communicate with each other via communication bus 452. Processor 446 may call logic instructions in memory 450 to perform the following method:
acquiring a first temperature value of the exhaust outlet 402;
obtaining a second temperature value in the exhaust tube 429;
in response to the first temperature value being different from the second temperature value, an operating state of the cold source and/or the spray device 404 is determined.
Furthermore, the logic instructions in the memory 450 may be implemented in software functional units and stored in a computer readable storage medium when sold or used as a stand-alone product. Based on such understanding, the technical solution of the present invention may be embodied in the form of a software product, which is stored in a storage medium and includes instructions for causing a computer device (which may be a personal computer, a server, or a network device) to execute all or part of the steps of the method according to the embodiments of the present invention. And the aforementioned storage medium includes: a U-disk, a removable hard disk, a Read-Only Memory 450 (ROM), a Random Access Memory 450 (RAM), a magnetic disk or an optical disk, and various media capable of storing program codes.
Embodiments of the present invention disclose a computer program product, the computer program product comprising a computer program stored on a non-transitory computer readable storage medium, the computer program comprising program instructions, which, when executed by a computer, enable the computer to perform the methods provided by the above-mentioned method embodiments, for example, including:
acquiring a first temperature value of the exhaust outlet 402;
acquiring a second temperature value in the exhaust pipe 429;
in response to the first temperature value being different from the second temperature value, an operating state of the cold source and/or the spray device 404 is determined.
In another aspect, an embodiment of the present invention further provides a non-transitory computer-readable storage medium, on which a computer program is stored, where the computer program is implemented to perform the transmission method provided in the foregoing embodiments when executed by the processor 446, and for example, the computer program includes:
acquiring a first temperature value of the exhaust outlet 402;
acquiring a second temperature value in the exhaust pipe 429;
in response to the first temperature value being different from the second temperature value, an operating state of the cold source and/or the spray device 404 is determined.
The above-described embodiments of the apparatus are merely illustrative, and the units described as separate parts may or may not be physically separate, and parts displayed as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the modules may be selected according to actual needs to achieve the purpose of the solution of the present embodiment. One of ordinary skill in the art can understand and implement it without inventive effort.
Through the above description of the embodiments, those skilled in the art will clearly understand that each embodiment may be implemented by software plus a necessary general hardware platform, and may also be implemented by hardware. Based on such understanding, the technical solutions in essence or part contributing to the related art can be embodied in the form of a software product, which can be stored in a computer readable storage medium, such as ROM/RAM, magnetic disk, optical disk, etc., and includes several instructions for causing a computer device (which can be a personal computer, a server, or a network device, etc.) to execute the method according to various embodiments or some parts of embodiments.
Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (11)
1. A semiconductor exhaust gas treatment device, comprising:
an exhaust gas inlet;
the exhaust gas outlet is communicated with the exhaust gas inlet in a fluid mode and is provided with a first temperature detection piece used for obtaining a first temperature value in the exhaust gas outlet and a humidity detection piece used for obtaining an actual humidity value in the exhaust gas outlet;
the spraying device is arranged between the waste gas inlet and the waste gas outlet to spray and cool the waste gas, and comprises a pumping piece and a frequency converter which are electrically connected;
the cold source is arranged between the spraying device and/or the spraying device and the waste gas outlet;
the exhaust pipe is communicated with the exhaust gas outlet, and a second temperature detection piece used for acquiring a second temperature value in the exhaust pipe is arranged in the exhaust pipe;
the control system is suitable for responding to the fact that the first temperature value is larger than the second temperature value and smaller than a temperature upper limit value, and determining that the cold source is started and/or the spraying device operates in a frequency reduction mode;
the first temperature value is a maximum preset temperature value corresponding to a maximum preset humidity value corresponding to a preset humidity interval corresponding to an actual humidity value of the exhaust gas outlet.
2. The semiconductor exhaust gas treatment device according to claim 1, wherein the cool source includes a first cool source and a second cool source;
the first cold source is arranged on the spraying device, and the second cold source is arranged between the spraying device and the waste gas outlet.
3. The semiconductor exhaust gas treatment device according to claim 2, wherein the first cold source comprises a first gas source, a first valve body and a first gas gun which are connected in sequence;
a spiral pipe is arranged in the spraying device, and the first air gun is communicated with the spiral pipe;
a plurality of first nozzles are arranged on the spraying device and communicated with the spiral pipe.
4. The semiconductor exhaust gas treatment device according to claim 2, wherein the second cold source comprises a second gas source, a second valve body and a second gas gun which are connected in sequence;
the semiconductor waste gas treatment equipment further comprises an air blowing pipe communicated with the second air gun, the air blowing pipe is arranged between the spraying device and the waste gas outlet, and the air blowing pipe is provided with a plurality of second nozzles.
5. A control method based on the semiconductor exhaust gas treatment device according to any one of claims 1 to 4, characterized by comprising:
acquiring a first temperature value of an exhaust gas outlet;
acquiring a second temperature value in the exhaust pipe;
in response to the first temperature value being different from the second temperature value, determining an operating state of the cold source and/or the spray device;
wherein the step of determining the operating state of the cold source and/or the spray device in response to the first temperature value being different from the second temperature value comprises:
in response to the first temperature value being greater than the second temperature value and less than a temperature upper limit value, determining that the cold source is started and/or the spraying device operates in a frequency reduction mode;
the step of obtaining a first temperature value of the exhaust gas outlet comprises:
acquiring an actual humidity value of the exhaust gas outlet;
determining a preset humidity interval corresponding to the actual humidity value;
and acquiring a maximum preset temperature value corresponding to a maximum preset humidity value corresponding to the preset humidity interval as the first temperature value.
6. The control method of a semiconductor exhaust gas treatment device according to claim 5, wherein the step of determining the operating state of the cool source and/or the spray unit in response to the first temperature value being different from the second temperature value comprises:
and responding to the fact that the first temperature value is smaller than the second temperature value and larger than a temperature lower limit value, and determining that the cold source is kept closed and/or the spraying device operates at power frequency.
7. The control method of the semiconductor exhaust gas treatment device according to any one of claims 5 to 6, characterized by further comprising:
and determining that the first temperature value is greater than the upper temperature limit value or less than the lower temperature limit value, and stopping the semiconductor waste gas treatment equipment.
8. A control device based on the semiconductor exhaust gas treatment device according to any one of claims 1 to 4, characterized by comprising:
the first acquisition module is used for acquiring a first temperature value of the exhaust gas outlet;
the second acquisition module is used for acquiring a second temperature value in the exhaust pipe;
the control module is used for responding to the fact that the first temperature value is larger than the second temperature value and smaller than the upper temperature limit value, and determining that the cold source is started and/or the spraying device operates in a frequency reduction mode;
the first temperature value is a maximum preset temperature value corresponding to a maximum preset humidity value corresponding to a preset humidity interval corresponding to an actual humidity value of the exhaust gas outlet.
9. An electronic device comprising a memory, a processor, and a computer program stored on the memory and executable on the processor, characterized in that the processor implements the steps of the method for controlling a semiconductor exhaust gas treatment device according to any one of claims 5 to 7 when executing the program.
10. A non-transitory computer-readable storage medium on which a computer program is stored, characterized in that the computer program, when executed by a processor, implements the steps of the control method of the semiconductor exhaust gas processing apparatus according to any one of claims 5 to 7.
11. A computer program product comprising a computer program, characterized in that the computer program, when being executed by a processor, realizes the steps of the method of controlling a semiconductor exhaust gas treatment device according to any one of claims 5 to 7.
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| GB2099976B (en) * | 1981-06-05 | 1985-03-06 | Russel Finex | Heat exchanger |
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| CN103357191B (en) * | 2012-03-31 | 2015-06-17 | 承源环境科技企业有限公司 | Volatile organic compound treating method and device |
| CN202605963U (en) * | 2012-05-31 | 2012-12-19 | 佛山市海天调味食品股份有限公司 | Treatment system for industrial tail gas |
| JP2018021510A (en) * | 2016-08-03 | 2018-02-08 | 日野自動車株式会社 | Condensed water suppression device |
| US10125702B2 (en) * | 2017-03-07 | 2018-11-13 | GM Global Technology Operations LLC | Method of operating an internal combustion engine having a turbocharger |
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| CN207899179U (en) * | 2017-12-18 | 2018-09-25 | 重庆中色新材料有限公司 | A kind of rare earth permanent-magnetic material high efficiency drying air outlet |
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| CN211260843U (en) * | 2019-12-10 | 2020-08-14 | 张家港市废气处理设备厂 | Waste gas catalytic combustion device |
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