CN114512391A - Plasma processing apparatus - Google Patents

Plasma processing apparatus Download PDF

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Publication number
CN114512391A
CN114512391A CN202210089374.XA CN202210089374A CN114512391A CN 114512391 A CN114512391 A CN 114512391A CN 202210089374 A CN202210089374 A CN 202210089374A CN 114512391 A CN114512391 A CN 114512391A
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CN
China
Prior art keywords
hole
pin
processing apparatus
plasma processing
electrostatic chuck
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Pending
Application number
CN202210089374.XA
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Chinese (zh)
Inventor
佐佐木康晴
石川聪
千叶谅
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication of CN114512391A publication Critical patent/CN114512391A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T279/00—Chucks or sockets
    • Y10T279/23—Chucks or sockets with magnetic or electrostatic means

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

The invention provides a plasma processing apparatus, which can inhibit the generation of abnormal discharge caused by a through hole. The plasma processing apparatus includes: an electrostatic chuck having a mounting surface on which an object to be processed is mounted and a back surface facing the mounting surface, the electrostatic chuck having a first through hole penetrating the mounting surface and the back surface; and a base having a supporting surface for supporting the electrostatic chuck, wherein a second through hole communicating with the first through hole is formed in the base, and an insertion member is provided in the first through hole and the second through hole, wherein a portion of the insertion member corresponding to a communication portion between the first through hole of the electrostatic chuck and the second through hole of the base is formed of at least an elastic member.

Description

Plasma processing apparatus
The present application is a divisional application of an application having an application date of 2017, 12/5, an application number of 201711270773.1, and an invention name of "plasma processing apparatus".
Technical Field
Various aspects and embodiments of the present invention relate to a plasma processing apparatus.
Background
Conventionally, a plasma processing apparatus has been known which performs a plasma process on an object to be processed such as a wafer using plasma. Such a plasma processing apparatus includes a stage for holding a target object, which also serves as an electrode, in a processing chamber capable of forming a vacuum space. The plasma processing apparatus applies a predetermined high-frequency power to a mounting table to perform a plasma process on an object to be processed placed on the mounting table. The mounting table is formed with a through hole in which the lift pin is housed. In the plasma processing apparatus, when the object to be processed is conveyed, the lift pins are protruded from the through holes, and the object to be processed is supported from the back surface by the lift pins to be detached from the mounting table. In order to suppress the occurrence of abnormal discharge due to exposure of the lift pin to plasma, the lift pin is formed of an insulating member and the lower portion is formed of a conductive material.
Patent document 1: japanese patent laid-open No. 2000-195935
Disclosure of Invention
Problems to be solved by the invention
However, in recent years, the plasma processing apparatus increases the high-frequency power applied to the stage to a high voltage to perform the plasma processing. When the high-frequency power applied to the mounting table is increased in voltage, abnormal discharge may occur due to the through hole in which the lift pin is housed. In the plasma processing apparatus, when abnormal discharge occurs in the through hole, the quality of the object to be processed may be deteriorated, which may cause a reduction in yield.
Means for solving the problems
The disclosed plasma processing apparatus has an electrostatic chuck and lift pins in one embodiment. The electrostatic chuck has a mounting surface on which an object to be processed is mounted and a back surface facing the mounting surface, and a through hole penetrating the mounting surface and the back surface is formed in the electrostatic chuck. At least a part of the lift pin is formed of an insulating member, a tip of the lift pin is received in the through hole, and the lift pin moves in the vertical direction with respect to the mounting surface to convey the object to be processed in the vertical direction. The plasma processing apparatus has a conductive member at least one of a tip portion of the lift pin corresponding to the through hole and a wall surface of the through hole facing the lift pin.
In another embodiment, a plasma processing apparatus is disclosed that includes: an electrostatic chuck having a mounting surface on which an object to be processed is mounted and a back surface facing the mounting surface, the electrostatic chuck having a first through hole penetrating the mounting surface and the back surface; and a base having a support surface for supporting the electrostatic chuck, wherein a second through hole communicating with the first through hole is formed in the base, and an insertion member is provided in the first through hole and the second through hole, wherein a portion of the insertion member corresponding to a communication portion between the first through hole of the electrostatic chuck and the second through hole of the base is formed of at least an elastic member.
ADVANTAGEOUS EFFECTS OF INVENTION
According to one embodiment of the disclosed plasma processing apparatus, it is possible to suppress the occurrence of abnormal discharge due to the through-hole.
Drawings
Fig. 1 is a schematic cross-sectional view showing the structure of a plasma processing apparatus according to the present embodiment.
Fig. 2 is a schematic cross-sectional view showing a mounting table in the plasma processing apparatus of fig. 1.
Fig. 3 is a schematic cross-sectional view showing a mounting table in the plasma processing apparatus of fig. 1.
Fig. 4 is a diagram schematically showing a state of the potential in the vicinity of the pin through hole of the electrostatic chuck.
Fig. 5 is a view schematically showing the tip end portion of the lift pin accommodated in the pin through-hole.
Fig. 6 is a view schematically showing the tip end portion of the lifter pin accommodated in the pin through-hole.
Fig. 7 is a diagram showing an example of a result of calculating the skin effect.
Fig. 8 is a diagram showing an example in which a conductive film is formed at the tip end portion of the lift pin.
Fig. 9 is a diagram showing an example in which the tip end portion of the lift pin is formed by a conductive member.
Fig. 10 is a diagram showing an example of a conductive portion embedded in the tip portion of the lift pin.
Fig. 11 is a diagram showing another example in which a conductive portion is embedded in the inside of the tip portion of the lift pin.
Fig. 12 is a diagram for simulating a change in potential in the pin through hole using an equivalent circuit.
Fig. 13 is a view showing an example in which a conductive member is provided on a wall surface of the pin through hole facing the lifter pin.
Fig. 14 is a perspective view schematically showing the vicinity of the pin through hole of the electrostatic chuck.
Fig. 15A is a schematic cross-sectional view illustrating the mounting table.
Fig. 15B is a diagram illustrating breakage of the insertion member.
Fig. 16A is a diagram illustrating an insertion member according to the third embodiment.
Fig. 16B is a diagram illustrating an insertion member according to the third embodiment.
Description of the reference numerals
W: a wafer; 6: an electrostatic chuck; 6 c: a conductive film; 6 d: a cylindrical member; 21: a carrying surface; 22: a back side; 61: a lift pin; 61 a: a pin body portion; 61 b: the pin is provided with a pin end; 61 c: a conductive film; 61 d: a recess; 61 e: a conductive portion; 100: a plasma processing apparatus; 200: a pin through hole; 210: a gas supply through hole; 210 a: a through hole; 210 b: a through hole; 220: an insert member.
Detailed Description
Embodiments of the plasma processing apparatus disclosed in the present application will be described in detail below with reference to the drawings. In the drawings, the same or corresponding portions are denoted by the same reference numerals. The present invention is not limited to the invention disclosed in the present embodiment. The embodiments can be appropriately combined within a range in which the processing contents are not contradictory. In the drawings, the same or corresponding portions are denoted by the same reference numerals. The terms "upper" and "lower" are used for convenience of understanding based on the state shown in the drawings.
(first embodiment)
[ Structure of plasma processing apparatus ]
Fig. 1 is a schematic cross-sectional view showing the structure of a plasma processing apparatus according to the present embodiment. The plasma processing apparatus 100 is configured to be airtight, and has a processing container 1 electrically grounded. The processing container 1 is formed in a cylindrical shape and is made of, for example, aluminum. A processing space for generating plasma is defined in the processing container 1. A stage 2 for horizontally supporting a semiconductor wafer (hereinafter, simply referred to as "wafer") W as a workpiece (work-piece) is provided in the processing container 1. The mounting table 2 includes a base material (base) 2a and an Electrostatic chuck (ESC) 6. The base material 2a is made of a conductive metal, for example, aluminum, and functions as a lower electrode. The electrostatic chuck 6 has a function for electrostatically attracting the wafer W. The mounting table 2 is supported by a support table 4. The support table 4 is supported by a support member 3 made of, for example, quartz. A focus ring 5 made of, for example, single crystal silicon is provided on the outer periphery of the mounting table 2. A cylindrical inner wall member 3a made of, for example, quartz is provided in the processing container 1 so as to surround the mounting table 2 and the support table 4.
A first RF (Radio Frequency) power source 10a is connected to the substrate 2a via a first matching unit 11a, and a second RF power source 10b is connected to the substrate 2a via a second matching unit 11 b. The first RF power source 10a is configured to generate plasma, and is configured to supply high-frequency power of a predetermined frequency from the first RF power source 10a to the base material 2a of the stage 2. The second RF power source 10b is used for drawing in ions (for biasing), and is configured to supply high-frequency power having a predetermined frequency lower than the frequency of the first RF power source 10a from the second RF power source 10b to the base material 2a of the stage 2. In this manner, the stage 2 can be applied with a voltage. On the other hand, a shower head 16 functioning as an upper electrode is provided above the mounting table 2 so as to be parallel to and face the mounting table 2. The showerhead 16 and the stage 2 function as a pair of electrodes (upper electrode and lower electrode).
The electrostatic chuck 6 is configured such that an electrode 6a is interposed between the insulators 6b, and a dc power supply 12 is connected to the electrode 6 a. Then, a dc voltage is applied from the dc power supply 12 to the electrode 6a, whereby the wafer W is attracted by coulomb force.
A refrigerant flow path 2d is formed inside the mounting table 2, and a refrigerant inlet pipe 2b and a refrigerant outlet pipe 2c are connected to the refrigerant flow path 2 d. The table 2 can be controlled to a predetermined temperature by circulating an appropriate coolant, such as cooling water, through the coolant flow path 2 d. A gas supply pipe 30 for supplying a gas for heat and cold transfer (backside gas) such as helium gas to the back surface of the wafer W is provided so as to penetrate the stage 2, and the gas supply pipe 30 is connected to a gas supply source (not shown). With these configurations, the wafer W held by the electrostatic chuck 6 on the upper surface of the mounting table 2 is controlled to a predetermined temperature.
The mounting table 2 is provided with a plurality of, for example, three pin through holes 200 (only one pin through hole is shown in fig. 1), and the lift pins 61 are disposed in the pin through holes 200, respectively. The lift pin 61 is connected to a drive mechanism 62, and is moved up and down by the drive mechanism 62. The pin through hole 200 and the lift pin 61 are configured as follows.
The shower head 16 is provided in the ceiling portion of the processing container 1. The head 16 includes a main body 16a and an upper top plate 16b constituting an electrode plate, and the head 16 is supported on the upper portion of the processing container 1 via an insulating member 95. The main body 16a is made of a conductive material, for example, aluminum, the surface of which is anodized, and is configured to detachably support the upper top plate 16b at a lower portion of the main body 16 a.
The body portion 16a is provided therein with a gas diffusion chamber 16 c. Further, the body portion 16a has a large number of gas flow holes 16d formed in the bottom thereof so as to be positioned below the gas diffusion chamber 16 c. The upper top plate 16b is provided so that a gas introduction hole 16e formed to penetrate the upper top plate 16b in the thickness direction overlaps the gas flow hole 16 d. With this configuration, the process gas supplied to the gas diffusion chamber 16c is supplied into the process container 1 through the gas through-hole 16d and the gas introduction hole 16e in a dispersed shower-like manner.
The main body 16a is formed with a gas inlet 16g for introducing a process gas into the gas diffusion chamber 16 c. One end of the gas supply pipe 15a is connected to the gas inlet 16 g. A process gas supply source (gas supply unit) 15 for supplying a process gas is connected to the other end of the gas supply pipe 15 a. A Mass Flow Controller (MFC)15b and an opening/closing valve V2 are provided in this order from the upstream side in the gas supply pipe 15 a. A process gas for plasma etching is supplied from a process gas supply source 15 to a gas diffusion chamber 16c through a gas supply pipe 15 a. The process gas is supplied from the gas diffusion chamber 16c into the process container 1 through the gas through-hole 16d and the gas introduction hole 16e in a dispersed manner in a shower shape.
A variable dc power supply 72 is electrically connected to the head 16 as the upper electrode via a Low Pass Filter (LPF) 71. The variable dc power supply 72 is configured to be turned on and off by an on-off switch 73. The current and voltage of the variable dc power supply 72 and the on/off of the on/off switch 73 are controlled by a control unit 90 described later. When a high frequency is applied from the first RF power supply 10a and the second RF power supply 10b to the stage 2 to generate plasma in the processing space, the on-off switch 73 is turned on by the controller 90 as necessary, and a predetermined dc voltage is applied to the showerhead 16 as an upper electrode, as described later.
The cylindrical ground conductor 1a is provided to extend from the sidewall of the processing chamber 1 to a position above the height position of the head 16. The cylindrical ground conductor 1a has a ceiling wall at an upper portion thereof.
An exhaust port 81 is formed in the bottom of the processing container 1. The first exhaust device 83 is connected to the exhaust port 81 via an exhaust pipe 82. The first exhaust unit 83 has a vacuum pump, and is configured to be able to reduce the pressure in the processing container 1 to a predetermined vacuum degree by operating the vacuum pump. On the other hand, a transfer port 84 for the wafer W is provided in a side wall of the processing container 1, and a gate valve 85 for opening and closing the transfer port 84 is provided in the transfer port 84.
A deposit shield 86 is provided along the inner wall surface inside the side portion of the process container 1. The deposition shield 86 prevents etching by-products (deposits) from adhering to the process vessel 1. A conductive member (GND block) 89 connected to the deposition shield 86 so as to be able to control the potential with respect to the ground is provided at a height position substantially equal to the height of the wafer W, thereby preventing abnormal discharge. In addition, a deposit shield 87 extending along the inner wall member 3a is provided at a lower end portion of the deposit shield 86. The deposit shields 86, 87 are detachably provided.
The plasma processing apparatus 100 having the above-described configuration comprehensively controls the operation thereof by the control unit 90. The control unit 90 includes a user interface 92, a storage unit 93, and a process controller 91 including a CPU for controlling each unit of the plasma processing apparatus 100.
The user interface 92 is configured to include a keyboard for a process manager to perform an input operation of a command to manage the plasma processing apparatus 100, a display for visually displaying an operation status of the plasma processing apparatus 100, and the like.
The storage unit 93 stores a process in which a control program (software) for realizing various processes executed by the plasma processing apparatus 100 by the control of the process controller 91, process condition data, and the like are stored. Then, if necessary, a desired process is performed by the plasma processing apparatus 100 under the control of the process controller 91 by calling up an arbitrary process from the storage unit 93 based on an instruction from the user interface 92 or the like and then causing the process controller 91 to execute the arbitrary process. In addition, as for the process such as the control program and the processing condition data, a process stored in a computer-readable computer storage medium (for example, a hard disk, a CD, a flexible disk, a semiconductor memory, or the like) or the like can be used, or the process can be transmitted from another apparatus via a dedicated line as needed and used on line.
[ Main part Structure of the mounting Table ]
Next, the main structure of the table 2 will be described with reference to fig. 2 and 3. Fig. 2 and 3 are schematic cross-sectional views showing a mounting table in the plasma processing apparatus of fig. 1. Fig. 2 shows a case where the wafer W is supported by raising the lift pins 61, and fig. 3 shows a case where the wafer W is supported by the electrostatic chuck 6 by lowering the lift pins 61. As described above, the mounting table 2 includes the base material 2a and the electrostatic chuck 6, and the lift pins 61 are configured to be inserted from below the base material 2a to above the electrostatic chuck 6.
The electrostatic chuck 6 has a disk shape, and has a mounting surface 21 on which the wafer W is mounted, and a back surface 22 opposed to the mounting surface 21. The mounting surface 21 is circular and contacts the back surface of the wafer W to support the disc-shaped wafer W. The substrate 2a is bonded to the back surface 22 of the electrostatic chuck 6.
The end portion (gas hole) of the gas supply pipe 30 is formed on the mounting surface 21. The gas supply pipe 30 supplies helium gas for cooling. The end of the gas supply pipe 30 is formed by a through hole 30a formed in the electrostatic chuck 6 and a through hole 30b formed in the base material 2 a. The through hole 30a is provided to penetrate from the back surface 22 of the electrostatic chuck 6 to the mounting surface 21. That is, the inner wall of the through hole 30a is formed by the electrostatic chuck 6. On the other hand, the through-hole 30b is provided to penetrate from the back surface of the base material 2a to the bonding surface between the base material 2a and the electrostatic chuck 6. That is, the inner wall of the through-hole 30b is formed by the base material 2 a. The through hole 30b has a larger diameter than the through hole 30a, for example. The electrostatic chuck 6 and the base material 2a are disposed so that the through-hole 30a and the through-hole 30b communicate with each other. A gas jacket 204 and a gas separator 202 are disposed in the gas supply pipe 30.
Further, a pin through hole 200 for receiving the lift pin 61 is formed in the mounting surface 21. The pin through-hole 200 is formed by a through-hole 200a formed in the electrostatic chuck 6 and a through-hole 200b formed in the base material 2 a. The through hole 200a is formed in the electrostatic chuck 6, and the through hole 200b is formed in the base material 2 a. The through hole 200a forming the pin through hole 200 has a slightly larger (for example, about 0.1mm to 0.5mm larger) diameter than the outer diameter of the lift pin 61, which is the diameter corresponding to the outer diameter of the lift pin 61, and can accommodate the lift pin 61 therein. The through hole 200b has a larger diameter than the through hole 200a, for example. Further, a pin bushing 203 and a pin spacer 201 are disposed between the inner walls of the through- holes 200a and 200b and the lift pin 61. In the electrostatic chuck 6 according to the present embodiment, the pin through-hole 200 is formed by the pin bushing 203 and the pin spacer 201.
At least a part of the lift pin 61 is formed of an insulating member. For example, the lift pin 61 includes a pin body 61a formed in a pin shape from an insulating ceramic, resin, or the like. The pin body 61a has a cylindrical shape and an outer diameter of, for example, about several mm. The pin main body 61a has a pin end 61b contacting the wafer W formed by chamfering the pin main body 61a, and the pin main body 61a has a spherical surface. The spherical surface has a very large curvature, for example, so that the entire pin tip 61b of the lift pin 61 approaches the back surface of the wafer W.
The lift pin 61 has a conductive film 61c formed of a conductive member at a tip portion corresponding to the pin through hole 200. For example, the lift pin 61 has a conductive film 61c in a range corresponding to the thickness of the electrostatic chuck 6 from the pin end portion 61b side of the pin main body portion 61 a. The pin tip 61b of the lift pin 61 is preferably not covered with the conductive film 61c because it contacts the wafer W. The pin upper end 61b of the lift pin 61 may be covered with a conductive film 61 c.
The lift pin 61 moves up and down in the pin through hole 200 by the driving mechanism 62 shown in fig. 1, and is configured to be extendable and retractable with respect to the mounting surface 21 of the mounting table 2. When the lift pins 61 are accommodated, the driving mechanism 62 adjusts the height of the stop position of the lift pins 61 so that the pin tip portions 61b of the lift pins 61 are positioned directly below the back surface of the wafer W.
As shown in fig. 2, in a state where the lift pins 61 are raised, a part of the pin main body 61a and the pin end 61b protrude from the mounting surface 21 of the mounting table 2, and the wafer W is supported on the upper portion of the mounting table 2. On the other hand, as shown in fig. 3, in a state where the lift pins 61 are lowered, the pin main bodies 61a are accommodated in the pin through holes 200, and the wafer W is placed on the placement surface 21. Thus, the lift pins 61 transport the wafer W in the vertical direction.
In addition, the plasma processing apparatus 100 increases the voltage of the high-frequency power applied to the mounting table 2. When the high-frequency power applied to the mounting table 2 is increased in voltage, abnormal discharge may occur due to the pin through-hole 200.
Fig. 4 is a diagram schematically showing a state of the potential in the vicinity of the pin through hole of the electrostatic chuck. As shown in fig. 4, the electrostatic chuck 6 has a mounting surface 21 and a back surface 22 opposed to the mounting surface 21. Further, the wafer W is placed on the placing surface 21. In addition, a pin through-hole 200 is formed in the electrostatic chuck 6. In the plasma processing apparatus 100, when high-frequency power is applied to the stage 2, a potential difference is generated between the wafer W and the back surface 22 of the electrostatic chuck 6 due to the electrostatic capacitance of the electrostatic chuck 6. Fig. 4 shows equipotential lines of an RF potential generated when high-frequency power is applied to the stage 2 by broken lines. For example, when the plasma processing apparatus 100 increases the voltage of the high-frequency power applied to the stage 2 and the potential difference of the RF potential generated in the pin through-hole 200 exceeds the limit value at which the discharge occurs, the abnormal discharge occurs.
Therefore, in the plasma processing apparatus 100, as shown in fig. 2 and 3, the conductive film 61c formed of a conductive member is formed at the tip portion of the lift pin 61 corresponding to the pin through hole 200.
[ example of change in electric characteristics due to conductive film ]
The change in the electrical characteristics of the mounting table 2 caused by the formation of the conductive film 61c at the tip portion of the lift pin 61 will be described with reference to fig. 5 and 6. Fig. 5 and 6 are views schematically showing the tip end portion of the lifter pin accommodated in the pin through-hole. As shown in fig. 5 and 6, the electrostatic chuck 6 of the mounting table 2 has pin through holes 200 formed therein, and the wafer W is mounted thereon. The electrostatic chuck 6 is supported by the base material 2 a. An insulator 2e for insulation is provided on the base material 2 a. Fig. 5 shows a state where the conductive film 61c is not present at the tip end of the lift pin 61. Fig. 6 shows a state where the conductive film 61c is provided at the tip end portion of the lift pin 61. When high-frequency power is applied to the mounting table 2, a part of the insulator 2e can be electrically regarded as, for example, capacitors C1 and C2. The space around the elevating pin 61 between the elevating pin 61 and the pin through-hole 200 can be regarded as the capacitor C3. The right side of fig. 5 and 6 shows equivalent circuits EC1, EC2 that equivalently indicate electrical states when high-frequency power is applied. As shown in fig. 5, when high-frequency power is applied to the mounting table 2, the equivalent circuit EC1 of the capacitors C1, C2, and C3 can be regarded as being connected in series to the power source PV for supplying high-frequency power in the vicinity of the pin through hole 200 of the mounting table 2. The power source PV corresponds to, for example, a first RF power source 10a and a second RF power source 10 b. The connection point between the power source PV of the equivalent circuit EC1 and the capacitor C3 is set to P1. The connection point between the capacitor C3 and the capacitor C2 is set to P2. The potential difference between the connection point P1 and the connection point P2 corresponds to the RF potential difference generated in the pin through-hole 200. When the high-frequency power supplied from the power source PV is increased in voltage, the potential difference between the connection point P1 and the connection point P2 increases, and abnormal discharge occurs.
On the other hand, as shown in fig. 6, when the conductive film 61C is provided at the tip end portion of the lift pin 61, the conductive film 61C can be regarded as the resistor R connected in parallel to the capacitor C3 as shown in the equivalent circuit EC 2. In this way, when the resistor R is connected in parallel to the capacitor C3, the potential difference between the connection point P1 and the connection point P2 can be reduced. That is, the conductive film 61c can alleviate the RF potential difference generated in the pin through-hole 200.
The conductive member used for the conductive film 61c may be any material having conductivity, and examples thereof include conductive materials such as silicon, carbon, silicon carbide, silicon nitride, titanium dioxide, and aluminum, and metals.
The resistance value of the conductive film 61c may be set so that the RF potential difference generated in the pin through-hole 200 by the high-frequency power applied to the mounting table 2 is suppressed to be smaller than the limit value at which discharge occurs. On the other hand, when the resistance value of the conductive film 61c is too low, an excessive current is generated in the conductive film 61 c. Therefore, the conductive film 61c is preferably formed to have a thickness that does not excessively allow current to flow. As for the conductive film 61c, the higher the frequency of the high-frequency power, the more the current concentrates on the surface of the conductive film. This phenomenon is called Skin effect (Skin depth, Skin effect), and is expressed by the following expression (1).
[ equation 1 ]
Figure BDA0003488549030000101
μ＝μo×μs
μo＝1.2566370614e-6(H/m)
Here, δ is a thickness (depth) from the surface of the flowing current. ρ is the resistivity of the conductive member used for the conductive film 61 c. μ is the permeability of the conductive member used for the conductive film 61 c. μ s is the relative permeability of the conductive member used for the conductive film 61 c. f is the frequency of the high frequency power.
Fig. 7 is a diagram showing an example of a result of calculating the skin effect. The example of fig. 7 shows the results of calculating δ in the case where the frequency f is 40MHz and 400kHz for three kinds of conductive members, the first conductive member, the second conductive member, and the third conductive member. For example, the resistivity ρ of the first conductive member is 4.5e2The relative permeability μ s is 1. The thickness δ of the first conductive member at a frequency f of 40MHz was calculated to be 1.69[ m ]]. Further, the resistivity ρ of the second conductive member is 1.0e6The relative permeability μ s is 1. The thickness δ of the second conductive member was calculated to be 7.96e at a frequency f of 40MHz1[m]。
When the thickness of the conductive film 61c is smaller than the thickness δ of the skin effect of the conductive member used for the conductive film 61c, the flow of current is restricted, the resistance increases, and the generated current decreases. Therefore, the thickness of the conductive film 61c is preferably 10% or less, more preferably 1% or less, of the thickness δ of the skin effect of the conductive member used for the conductive film 61 c. This can suppress excessive current generation in the conductive film 61 c.
The conductive film 61c may be formed in a flat state without a height difference at the tip end portion of the lift pin 61. Fig. 8 is a diagram showing an example in which a conductive film is formed at the tip end portion of the lift pin. The lift pin 61 has a recess 61d formed at the tip of the pin body 61a to a depth corresponding to the thickness of the conductive film 61 c. The conductive film 61c may be formed on the lift pin 61 in the recess 61d of the pin body 61 a.
In addition, the leading end portions of the lift pins 61 are formed thin to reduce the contact portion with the wafer W. The lift pin 61 according to the present embodiment has a cylindrical shape at its tip end, and has an outer diameter of, for example, about several mm. The outer diameter of the distal end portion of the lift pin 61 may be smaller than the skin effect thickness δ of the conductive member used for the conductive film 61 c. In this case, the tip portion of the lift pin 61 may be formed of a conductive member. For example, when the outer diameter of the distal end portion of the lift pin 61 is 10% or less, desirably 1% or less, of the thickness δ of the skin effect of the conductive member, the distal end portion of the lift pin 61 may be formed of the conductive member. For example, in the case where the frequency f is 40MHz, the thickness δ of the second conductive member is 7.96e1[m]The outer diameter of the lift pin 61 is 1% or less of the outer diameter of the tip portion. In this case, the tip portion of the lift pin 61 may be formed by the second conductive member. Fig. 9 is a diagram showing an example in which the tip end portion of the lift pin is formed by a conductive member. The lift pin 61 is provided with a conductive portion 61e formed of a conductive member in a range corresponding to the thickness of the electrostatic chuck 6 from the pin end portion 61b side of the lift pin 61.
The lift pin 61 may be configured such that a conductive member is provided inside the tip portion corresponding to the pin through-hole 200. That is, the lift pin 61 may have a conductive portion formed of a conductive member embedded in the tip portion corresponding to the pin through hole 200. Fig. 10 is a diagram showing an example of a conductive portion embedded in the tip portion of the lift pin. In the lift pin 61 shown in fig. 10, a conductive portion 61f formed of a conductive member is fitted into a tip portion corresponding to the pin through hole 200. The number of the conductive portions 61f may be plural. Fig. 11 is a diagram showing another example in which a conductive portion is embedded in the inside of the tip portion of the lift pin. In the lift pin 61 shown in fig. 11, two conductive portions 61f formed of conductive members are fitted into the tip portion corresponding to the pin through hole 200. Three or more conductive portions 61f may be embedded.
[ simulation of variation in potential ]
Fig. 12 is a diagram for simulating a change in potential in the pin through hole using an equivalent circuit. Fig. 12 (a) shows three waveforms W1 to W3 indicating changes in potential. The waveform W1 shows the potential of the connection point P1 of the equivalent circuits EC1, EC2 shown in fig. 5 and 6. The waveform W2 shows the potential of the connection point P2 of the equivalent circuit EC1 shown in fig. 5. That is, the waveform W2 shows the change in potential in the case where the conductive film 61c is not present at the tip portion of the lift pin 61. A waveform W3 shows the potential of the connection point P2 of the equivalent circuit EC2 shown in fig. 6. That is, the waveform W3 shows the change in potential in the case where the conductive film 61c is provided at the tip end portion of the lift pin 61. Fig. 12 (B) shows waveforms obtained by amplifying peak portions of the waveforms W1 to W3 in fig. 12 (a). The potential difference d1 shown in fig. 12 (B) is the difference between the waveform W1 and the waveform W2, and shows a potential difference generated when the conductive film 61c is not present at the tip portion of the lift pin 61. The potential difference d2 is the difference between the waveform W1 and the waveform W3, and shows a potential difference generated when the conductive film 61c is provided at the tip portion of the lift pin 61. The potential difference d2 is reduced compared to the potential difference d 1. In this way, when the conductive film 61c is provided at the tip of the lift pin 61, the potential difference is reduced. This can suppress the occurrence of abnormal discharge caused by the pin through-hole 200.
As described above, the plasma processing apparatus 100 according to the first embodiment includes the electrostatic chuck 6 and the lift pin 61. The electrostatic chuck 6 has a mounting surface 21 on which the wafer W is mounted and a back surface 22 opposed to the mounting surface 21, and the electrostatic chuck 6 is formed with a pin through-hole 200 penetrating the mounting surface 21 and the back surface 22. At least a part of the lift pins 61 is formed of an insulating member, the tips of the lift pins 61 are received in the pin through holes 200, and the lift pins 61 move in the vertical direction with respect to the mounting surface 21 to transport the wafer W in the vertical direction. The plasma processing apparatus 100 has a conductive film 61c or a conductive portion 61e at the tip portion of the lift pin 61 corresponding to the pin through hole 200. Thus, the plasma processing apparatus 100 can suppress the occurrence of abnormal discharge caused by the pin through-hole 200.
(second embodiment)
In the plasma processing apparatus 100 according to the first embodiment, a case where the conductive member is provided at the tip portion of the lift pin 61 corresponding to the pin through hole 200 is described. In the plasma processing apparatus 100 according to the second embodiment, a case will be described in which a conductive member is provided on a wall surface of the pin through-hole 200 that faces the lift pin 61.
Fig. 13 is a view showing an example in which a conductive member is provided on a wall surface of the pin through hole facing the lifter pin. The electrostatic chuck 6 is formed with a pin through hole 200, and the wafer W is placed on the electrostatic chuck 6. The pin through hole 200 accommodates the tip of the lift pin 61. The electrostatic chuck 6 has a conductive film 6c formed of a conductive member on a wall surface of the pin through hole 200 facing the lift pin 61.
Instead of the conductive film 6c, a conductive cylindrical member may be provided in the pin through-hole 200. Fig. 14 is a perspective view schematically showing the vicinity of the pin through hole of the electrostatic chuck. The electrostatic chuck 6 is formed with a pin through-hole 200. The conductive member may be provided on the wall surface of the pin through hole 200 facing the lift pin 61 by inserting the conductive cylindrical member 6d formed corresponding to the pin through hole 200 into the pin through hole 200. Further, for example, a part of the pin spacer 201 corresponding to the electrostatic chuck 6 or the entire pin spacer 201 may be formed by a conductive member.
The conductive film 6c may be made of any conductive material as long as it is a conductive member used for the cylindrical member 6d, and examples thereof include conductive materials such as silicon, carbon, silicon carbide, silicon nitride, titanium dioxide, and aluminum, and metals.
The conductive film 6c and the cylindrical member 6d electrically function as in the conductive film 61c of the first embodiment, and can alleviate the RF potential difference generated in the pin through-hole 200.
In this way, the plasma processing apparatus 100 according to the second embodiment has the conductive film 6c or the cylindrical member 6d on the wall surface of the pin through hole 200 facing the lift pin 61. Thus, the plasma processing apparatus 100 can suppress the occurrence of abnormal discharge caused by the pin through-hole 200.
(third embodiment)
Next, a third embodiment will be described. The configuration of the plasma processing apparatus according to the third embodiment is substantially the same as that of the plasma processing apparatus 10 shown in fig. 1, and therefore the same portions are denoted by the same reference numerals and description thereof is omitted, and different portions are mainly described.
Fig. 15A is a schematic cross-sectional view illustrating the mounting table. The gas supply pipe 30 is provided in the mounting table 2, and a gas supply through-hole 210 is formed in a distal end portion thereof. The gas supply through-hole 210 is formed by a through-hole 210a and a through-hole 210 b. The through-hole 210a is formed in the electrostatic chuck 6, and the through-hole 210b is formed in the base material 2 a. The through- holes 210a and 210b are formed to be aligned at normal temperature, for example. The insertion member 220 is disposed at a distance from the inner wall of the gas supply through hole 210.
In addition, by reducing the interval between the insertion member 220 and the gas supply through-hole 210, abnormal discharge caused by the gas supply through-hole 210 can be suppressed. Therefore, for example, it is conceivable to make the tip portion of the insertion member 220 thick to reduce the distance between the insertion member 220 and the gas supply through hole 210. In addition, abnormal discharge caused by the gas supply through-holes 210 can also be suppressed by shortening the straight portions of the heat transfer gas path. This is because shortening the straight line portion of the heat transfer gas path reduces the energy of electrons in the heat transfer gas. Therefore, the gas supply through-hole 210 is formed such that the diameter of the through-hole 210b is larger than the diameter of the through-hole 210a, and the insertion member 220 is formed such that the portion corresponding to the through-hole 210b is thicker than the tip portion of the insertion member 220.
However, when the distance between the insertion member 220 and the gas supply through-hole 210 is reduced, the insertion member 220 may be damaged. Fig. 15B is a diagram illustrating breakage of the insertion member. When the plasma processing is performed, the temperature of the mounting table 2 is, for example, increased from 100 ℃ to 200 ℃. The electrostatic chuck 6 and the base material 2a thermally expand when the temperature becomes high. Then, the through- holes 210a and 210b are shifted in position due to a difference in thermal expansion between the electrostatic chuck 6 and the base material 2 a. Therefore, for example, when the tip portion of the insertion member 220 is formed to be thick to reduce the distance between the insertion member 220 and the gas supply through-hole 210, the insertion member 220 may be damaged due to the positional deviation between the through-hole 210a and the through-hole 210 b.
Accordingly, a portion of the insertion member 220 is formed using an elastic member. For example, a portion of the insertion member 220 corresponding to a communication portion of the through-hole 210a and the through-hole 210b is formed of at least an elastic member.
Fig. 16A is a diagram illustrating an insertion member according to the third embodiment. For example, in the insertion member 220, in a state of being accommodated in the gas supply through hole 210, a conductive portion 220e formed of a conductive member is formed at a tip portion corresponding to an upper half portion of the through hole 210a from the upper end portion 220b side, and a position lower than the conductive portion 220e is formed by an elastic member. The elastic member may have elasticity to such an extent that the elastic member is not damaged by a positional deviation between the through-hole 210a and the through-hole 210b due to a temperature change. In addition, it is preferable that the elastic member is also resistant to plasma. Examples of the elastic member include fluorine-based resins. Examples of the fluorine-based resin include polytetrafluoroethylene. Polytetrafluoroethylene functions as an insulating member. The elastic member is not limited to a fluorine-based resin, and examples thereof include members having a Young's modulus of 20GPa or less. In particular, a member having a Young's modulus of 10GPa or less is more preferable.
Fig. 16B is a diagram illustrating an insertion member according to the third embodiment. Even when the electrostatic chuck 6 and the base material 2a are heated to high temperatures by the plasma treatment and the through- holes 210a and 210b are positionally displaced due to the difference in thermal expansion between the electrostatic chuck 6 and the base material 2a, the portion of the insertion member 220 corresponding to the communicating portion between the through- holes 210a and 210b is deformed, and the insertion member 220 can be prevented from being damaged. When the electrostatic chuck 6 and the base material 2a return to the normal temperature, as shown in fig. 16A, the positions of the through- holes 210a and 210b do not shift, and the shape of the insertion member 220 returns. Thus, even when the distance between the insertion member 220 and the gas supply through-hole 210 is reduced, the insertion member 220 can be prevented from being damaged.
As described above, the plasma processing apparatus 100 according to the third embodiment includes the electrostatic chuck 6 and the base material 2 a. The electrostatic chuck 6 has a mounting surface 21 on which the wafer W is mounted and a back surface 22 opposed to the mounting surface 21, and the electrostatic chuck 6 is formed with a through hole 210a penetrating the mounting surface 21 and the back surface 22. The base material 2a has a support surface for supporting the electrostatic chuck 6, and the base material 2a has a through hole 210b communicating with the through hole 210a, and the through hole 210a and the through hole 210b have the insertion member 220 therein. The portion of the insertion member 220 corresponding to the communication portion between the through hole 210a of the electrostatic chuck 6 and the through hole 210b of the base material 2a is formed of at least an elastic member. Thus, the plasma processing apparatus 100 can suppress the occurrence of the breakage of the insert member 220 even when the distance between the insert member 220 and the gas supply through hole 210 is reduced to suppress the occurrence of the abnormal discharge caused by the gas supply through hole 210.
While one embodiment has been described above, the present invention is not limited to the specific embodiment, and various modifications and changes can be made within the scope of the present invention described in the claims.
For example, the first to third embodiments may be combined. For example, the plasma processing apparatus 100 may be configured such that the conductive film 61c is formed at the tip portion of the lift pin 61 corresponding to the pin through hole 200, and the conductive film 6c is formed on the wall surface of the pin through hole 200 facing the lift pin 61. In addition, the plasma processing apparatus 100 may be formed with the lift pin 61 as the insert member 220. The insertion member 220 may be formed of a conductive member like the lift pin 61.
The conductive film 61c or the conductive portion 61e according to the first embodiment may not be provided on the entire peripheral surface of the tip portion of the lift pin 61 corresponding to the pin through hole 200. For example, the conductive film 61c or the conductive portion 61e may be provided on a circumferential surface of a part of the tip portion in the circumferential direction. For example, a plurality of conductive films 61c or conductive portions 61e may be provided on the circumferential surface of the tip portion of the lift pin 61 so as to be separated in the circumferential direction by a length corresponding to the thickness of the electrostatic chuck 6. The conductive film 6c according to the second embodiment may not be provided on the entire wall surface of the pin through hole 200 facing the lift pin 61. For example, the conductive film 6c may be provided on a wall surface of a part of the pin through hole 200 in the circumferential direction. For example, a plurality of conductive films 61c may be provided on the wall surface of the pin through hole 200 so as to be separated in the circumferential direction by the length of the pin through hole 200.
In addition, in the first and second embodiments, the plasma processing apparatus 100 may use plasma generated by a Radial line slot antenna (Radial line slot antenna).

Claims (7)

1. A plasma processing apparatus is characterized by comprising:
an electrostatic chuck having a mounting surface on which an object to be processed is mounted and a back surface facing the mounting surface, the electrostatic chuck being formed with a first through hole penetrating the mounting surface and the back surface; and
a base having a support surface for supporting the electrostatic chuck, a second through hole communicating with the first through hole being formed in the base, and an insertion member being provided in the first through hole and the second through hole,
wherein a portion of the insertion member corresponding to a communication portion of the first through hole of the electrostatic chuck and the second through hole of the base stage is formed of at least an elastic member.
2. The plasma processing apparatus according to claim 1,
the elastic member is formed of a member having a Young's modulus of 20GPa or less.
3. The plasma processing apparatus according to claim 1 or 2,
the insertion member has a conductive film formed of a conductive member at a distal end portion on the first through hole side.
4. The plasma processing apparatus according to claim 1 or 2,
the front end portion of the insertion member on the first through hole side is formed of a conductive member.
5. The plasma processing apparatus according to claim 1 or 2,
the insertion member includes a conductive member at a distal end portion thereof on the first through hole side.
6. The plasma processing apparatus according to claim 1 or 2,
at least one of the first through hole and the second through hole has a conductive film formed of a conductive member on a wall surface facing the insertion member.
7. The plasma processing apparatus according to claim 1 or 2,
a conductive cylindrical member is provided in the first through hole and the second through hole.
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Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110610840B (en) * 2018-06-14 2022-05-27 北京北方华创微电子装备有限公司 Bearing table and plasma equipment
JP7149739B2 (en) * 2018-06-19 2022-10-07 東京エレクトロン株式会社 Mounting table and substrate processing device
CN111326470A (en) * 2018-12-17 2020-06-23 夏泰鑫半导体(青岛)有限公司 Electrostatic chuck and semiconductor device
JP7134104B2 (en) * 2019-01-09 2022-09-09 東京エレクトロン株式会社 Plasma processing apparatus and mounting table for plasma processing apparatus
CN113035682B (en) * 2019-12-25 2023-03-31 中微半导体设备(上海)股份有限公司 Lower electrode assembly and plasma processing device thereof
JP2022094023A (en) 2020-12-14 2022-06-24 東京エレクトロン株式会社 Plasma processing apparatus
US12020977B2 (en) * 2021-03-12 2024-06-25 Applied Materials, Inc. Lift pin assembly
TW202333191A (en) * 2021-10-28 2023-08-16 日商東京威力科創股份有限公司 Plasma processing device and electrostatic chuck
WO2023153021A1 (en) * 2022-02-09 2023-08-17 日本碍子株式会社 Member for semiconductor manufacturing device
US11764094B2 (en) * 2022-02-18 2023-09-19 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor processing tool and methods of operation

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05175318A (en) * 1991-12-20 1993-07-13 Fujitsu Ltd Attaching and detaching method for board of electrostatic chuck
JPH11340309A (en) * 1998-05-29 1999-12-10 Kyocera Corp Ceramic lift pin including conductor and electrostatic chuck using it
JP2000077507A (en) * 1998-09-02 2000-03-14 Tokyo Electron Ltd Substrate support device
KR100765539B1 (en) * 2001-05-18 2007-10-10 엘지.필립스 엘시디 주식회사 Chemical Vapor Deposition Apparatus
KR20040026427A (en) * 2002-09-24 2004-03-31 삼성전자주식회사 lift fin and method of wafer lifting using thereof
CN100423224C (en) * 2005-12-09 2008-10-01 北京圆合电子技术有限责任公司 Wafer lifting device and lifting method
JP2007329304A (en) * 2006-06-08 2007-12-20 Matsushita Electric Ind Co Ltd Electrostatic chuck device
JP4789734B2 (en) * 2006-07-24 2011-10-12 株式会社東京精密 Wafer mounting table
KR20080061109A (en) * 2006-12-28 2008-07-02 세메스 주식회사 Electrostatic chuck and apparatus for manufacturing a substrate having the same
JP2009054746A (en) * 2007-08-27 2009-03-12 Nikon Corp Electrostatic chuck, and electrostatic chucking method
CN101872733B (en) * 2009-04-24 2012-06-27 中微半导体设备(上海)有限公司 System and method for sensing and removing residual charge of processed semiconductor process component
JP6178145B2 (en) * 2013-07-19 2017-08-09 Ｓｐｐテクノロジーズ株式会社 Plasma processing equipment
KR101529499B1 (en) * 2014-03-31 2015-06-17 에스피피 테크놀로지스 컴퍼니 리미티드 Heating device and plasma processing apparatus provided therewith
JP2016090204A (en) * 2014-11-11 2016-05-23 富士通株式会社 Loop type heat pipe and electronic equipment

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