CN114509927A - Photoresist stripping liquid and preparation method and application method thereof - Google Patents
Photoresist stripping liquid and preparation method and application method thereof Download PDFInfo
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- CN114509927A CN114509927A CN202111404444.8A CN202111404444A CN114509927A CN 114509927 A CN114509927 A CN 114509927A CN 202111404444 A CN202111404444 A CN 202111404444A CN 114509927 A CN114509927 A CN 114509927A
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- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
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Abstract
The application provides a photoresist stripping solution and preparation and application methods thereof, wherein the photoresist stripping solution comprises the following components in parts by weight: 50-75 parts of organic amine, 0.01-3 parts of surfactant, 0.01-3 parts of metal protective agent and 25-50 parts of organic solvent; wherein the metal protective agent comprises at least one of sorbate and chloroethylene acetate; the surfactant comprises at least one of fatty alcohol-polyoxyethylene ether, fatty alcohol-polyoxyethylene ether sulfate and sodium heavy alkyl benzene sulfonate. The photoresist stripping liquid has the advantages of high stripping speed, high stripping cleanliness and no corrosion effect on metal in the substrate, and particularly has no secondary corrosion effect on the metal in the substrate in a washing process after stripping.
Description
Technical Field
The application relates to the technical field of stripping liquid, in particular to photoresist stripping liquid and preparation and application methods thereof.
Background
In the production of electronic devices such as panels, it is necessary to remove the photoresist, which is used as a mask for wiring patterns, from the substrate using a photoresist stripper, thereby completing the production of the entire panel. At present, the photoresist stripping solution is easy to cause the problems of corrosion to a panel and copper wires and aluminum wires on the panel, incomplete photoresist stripping and the like in the using process.
Disclosure of Invention
In view of the above, the present application provides a photoresist stripper, and a preparation method and an application method thereof, which can effectively solve the problems in the prior art.
Specifically, the first aspect of the present application provides a photoresist stripping solution, which comprises the following components in parts by weight: 50-75 parts of organic amine, 0.01-3 parts of surfactant, 0.01-3 parts of metal protective agent and 30-50 parts of organic solvent; wherein the metal protective agent comprises at least one of sorbate and chloroethylene acetate; the surfactant comprises at least one of fatty alcohol-polyoxyethylene ether, fatty alcohol-polyoxyethylene ether sulfate and sodium heavy alkyl benzene sulfonate.
The photoresist stripping solution provided by the application comprises organic amine, a surfactant, a metal protective agent and an organic solution. The organic amine with effective amount can quickly wet the surface of the photoresist with the assistance of specific surfactants (namely fatty alcohol-polyoxyethylene ether, fatty alcohol-polyoxyethylene ether sulfate and sodium dialkylbenzene sulfonate), so that the photoresist layer is quickly broken and disintegrated, no photoresist residue is left on the substrate after stripping, and no corrosion effect is caused to metal on the substrate. In addition, the surfactant can effectively improve the permeability of the photoresist, further improve the stripping speed of the stripping liquid and reduce the consumption of the stripping liquid. In addition, when the content of the surfactant is too low, the delamination phenomenon of the stripping liquid can be caused, and the performance of the stripping liquid is influenced; if the content is too high, the excessive surfactant can be adsorbed on the surface of the photoresist, and the stripping effect is influenced. Therefore, the weight part of the surfactant in the stripping solution is controlled to be 0.01-3 parts in the application.
On the other hand, the sorbate and the acetyl chloride pyridine can be complexed with the surfactant to form a layer of compact protective film and be attached to the surface of the metal wiring, so that the copper and aluminum wirings on the substrate are effectively prevented from being corroded, and meanwhile, a larger potential difference can be prevented from being generated at the interface of the copper and the aluminum, further, the undercut phenomenon is prevented, and the product yield is improved. The weight part of the metal protective agent in the stripping solution is controlled to be 0.01-3 parts.
In some embodiments of the present application, the surfactant comprises a mixture of fatty alcohol-polyoxyethylene ether and at least one of fatty alcohol-polyoxyethylene ether sulfate and sodium dialkylbenzenesulfonate. Further, in some embodiments, the surfactant comprises a mixture of fatty alcohol-polyoxyethylene ether and fatty alcohol-polyoxyethylene ether sulfate. The fatty alcohol-polyoxyethylene ether sulfate and the sodium heavy alkyl benzene sulfonate are ionic surfactants, the fatty alcohol-polyoxyethylene ether is a nonionic surfactant, and after the ionic surfactants and the fatty alcohol-polyoxyethylene ether are compounded in a proper proportion, the cloud point of the fatty alcohol-polyoxyethylene ether can be improved, the dispersibility of the fatty alcohol-polyoxyethylene ether in a system can be improved, so that the photoresist stripping liquid has better temperature resistance and can be kept stable at higher temperature. Under the condition that the surfactant is a mixture of ionic and nonionic surfactants, the fatty alcohol-polyoxyethylene ether accounts for 60-80% of the surfactant by mass.
In some embodiments of the present application, the surfactant further comprises sodium alkyl benzene sulfonate. The sodium alkyl benzene sulfonate can generate complexing effect with the metal protective agent more easily, and the forming speed of the metal protective film on the metal surface can be accelerated in the stripping treatment process. A small amount of sodium alkyl benzene sulfonate can improve the compounding speed of the surfactant and the metal protective agent in the photoresist stripping liquid, so that the metal in the substrate is prevented from being corroded by the photoresist stripping liquid.
In an embodiment of the present application, the mass ratio of the surfactant to the metal protectant is 1: (0.5-2). The proper mass ratio of the surfactant to the metal protective agent can effectively improve the infiltration rate of the metal protective agent on the metal surface and the compactness of a protective film generated on the metal surface after the surfactant and the metal protective agent are compounded, so that the metal on the substrate is more effectively protected.
In the embodiment of the application, the metal protective agent further comprises at least one of salicylic acid and methylbenzotriazole. Among them, salicylic acid is an excellent protective agent for metallic aluminum; the methylbenzotriazole can simultaneously protect metals such as copper, aluminum and the like, and has universality.
In some embodiments of the present application, the metal protectant includes sorbate and chloroacetidine. The photoresist stripper containing the metal protective agent is suitable for a substrate containing metals such as copper and aluminum. Further, the metal protective agent comprises sorbate, chloroacetidine, salicylic acid and methylbenzotriazole. The photoresist stripping solution can remove the photoresist on the substrate containing copper and aluminum, and simultaneously has better protection effect on the metals such as copper, aluminum and the like.
In other embodiments, the metal protectant comprises a sorbate salt. The photoresist stripper containing the metal protective agent is mainly suitable for a substrate containing copper. Further, the metal protective agent comprises sorbate and methylbenzotriazole. In this case, the photoresist stripper containing the metal protectant can remove the photoresist on the copper-containing substrate and simultaneously play a better role in protecting copper.
In other embodiments, the metal protectant includes chloroacetidine. The photoresist stripper containing the metal protective agent is mainly suitable for a substrate containing aluminum. Further, chloroacetidine acetate and salicylic acid are included. Further, chloroacetidine acetate, salicylic acid, and tolyltriazole are included. At this time, the photoresist stripper containing the metal protective agent can remove the photoresist on the substrate containing aluminum and simultaneously play a better protection role on aluminum.
Herein, the sorbate salt includes at least one of potassium sorbate and calcium sorbate.
In the application, the photoresist stripping liquid contains 50-75 parts of organic amine. Illustratively, 50 parts, 55 parts, 60 parts, 65 parts, 68 parts, 69 parts, 70 parts, 71 parts, 72 parts, 75 parts may be mentioned.
In the application, the photoresist stripping solution contains 0.01-3 parts of metal protective agent. Illustratively, it may be 0.01 parts, 0.02 parts, 0.05 parts, 0.08 parts, 0.1 parts, 0.5 parts, 0.75 parts, 1 part, 2 parts, 3 parts.
In the application, the photoresist stripping solution contains 0.01-3 parts of surfactant. Illustratively, it may be 0.01 parts, 0.02 parts, 0.05 parts, 0.08 parts, 0.1 parts, 0.5 parts, 0.75 parts, 1 part, 2 parts, 3 parts.
In the application, the photoresist stripping solution contains 30-50 parts of organic solvent. Illustratively, 25 parts, 28 parts, 29 parts, 30 parts, 31 parts, 32 parts, 35 parts, 40 parts, 45 parts, 50 parts may be used.
In some embodiments of the present application, the photoresist stripper includes: 68-72 parts of organic amine, 0.01-1 part of surfactant, 0.01-1 part of metal protective agent and 28-32 parts of organic solvent. The optimized weight parts of the components are more favorable for ensuring the integral stripping effect of the photoresist stripping solution, namely the cleanliness and the stripping rate of the substrate after the photoresist is stripped.
In the embodiment of the present application, the organic amine includes at least one of monoethanolamine, monoisopropanolamine, diethanolamine, triethanolamine, 2-amino-2-methyl-1-propanol, 2-methylaminoethanol, 3-aminopropanolamine, and ethylenediamine. Monoethanolamine is preferred, and in the photoresist stripping liquid system provided by the application, monoethanolamine has stronger solubility to a photoresist layer.
In the present application, the organic solvent may include, but is not limited to, ethers, ketones, glycol ether esters, amides, sulfones. Examples of the ether solvent include ethylene glycol dimethyl ether, diethylene glycol dimethyl ether, ethylene glycol monomethyl ether, propylene glycol monomethyl ether, and diethylene glycol dimethyl ether. Examples of the ketone solvent include N-methylpyrrolidone and N-ethylpyrrolidone. The glycol ether ester solvents include propylene glycol methyl ether propionate, propylene glycol methyl ether acetate, ethylene glycol butyl ether acetate, diethylene glycol ethyl ether acetate, and the like. Examples of the amide solvent include dimethylacetamide, dimethylformamide, and N-methylpyrrolidone. Examples of the sulfone solvent include dimethyl sulfoxide and sulfolane. Preferably, the photoresist stripping solution system provided by the application is better in the affinity of the diethylene glycol monomethyl ether to the photoresist.
In a second aspect, the present application provides a method for preparing a photoresist stripper, comprising the steps of: mixing organic amine, a surfactant, a metal protective agent and an organic solvent according to a certain proportion to obtain a photoresist stripping solution; the photoresist stripping solution comprises the following components in parts by weight: 50-75 parts of organic amine, 0.01-3 parts of surfactant, 0.01-3 parts of metal protective agent and 25-50 parts of organic solvent; wherein the metal protective agent comprises at least one of sorbate and chloroethylene acetate; the surfactant comprises at least one of fatty alcohol-polyoxyethylene ether, fatty alcohol-polyoxyethylene ether sulfate and sodium heavy alkyl benzene sulfonate.
The preparation method can obtain the photoresist stripping liquid only by mixing the raw materials, has simple process and high production efficiency, and is suitable for large-scale industrial production.
In a third aspect, the present application provides a method for applying a photoresist stripping solution, comprising the following steps:
exposing and curing the substrate coated with the photoresist;
contacting the photoresist stripper provided by the first aspect of the present application or the photoresist stripper prepared according to the preparation method provided by the second aspect of the present application with the cured photoresist to strip the cured photoresist;
and cleaning and nitrogen purging are sequentially carried out on the substrate after the photoresist is stripped.
In the embodiment of the application, the substrate after the photoresist is stripped is cleaned by water, and the cleaning time is 50-60 s. In some embodiments, the substrate may be cleaned by immersing the substrate in water. In other embodiments, the cleaning may be accomplished by rinsing the substrate. Can be selected according to the actual production situation.
The treatment method is simple to operate and suitable for large-scale industrial production.
In the embodiment of the present application, the contacting includes immersing the substrate provided with the photoresist layer in the photoresist stripper, or spraying/rinsing the photoresist stripper on the substrate provided with the photoresist layer. Can be selected according to the actual production condition.
In the embodiment of the application, the stripping temperature is 50-75 ℃. The proper temperature can ensure the stripping speed and the cleanliness of the stripped substrate.
In the embodiment of the application, the stripping time is 10s-30 s. The proper time can ensure that no photoresist remains on the substrate after the stripping process.
The photoresist stripping liquid provided by the application has the advantages of high stripping speed, high stripping cleanliness and no corrosion effect on metal in a substrate, and particularly has no secondary corrosion effect on the metal in the substrate in a water washing process after stripping.
Drawings
FIG. 1 is a Scanning Electron Microscope (SEM) photograph of an aluminum sample after being immersed in a metal corrosion test solution S1 for 300S;
FIG. 2 is an SEM photograph of an aluminum test piece after being immersed in a metal corrosion test solution S3 for 300S.
Detailed Description
The technical solution of the present application is described in detail below with reference to a number of examples.
Example 1
And uniformly mixing monoethanolamine, a surfactant, a metal protective agent and diethylene glycol monomethyl ether according to a certain proportion to obtain the photoresist stripping solution. The photoresist stripping liquid comprises the following components in parts by weight: 68 parts of monoethanolamine, 0.5 part of surfactant, 0.5 part of metal protective agent and 32 parts of diethylene glycol monomethyl ether. The surfactant is a mixture of fatty alcohol-polyoxyethylene ether, fatty alcohol-polyoxyethylene ether sulfate and sodium heavy alkyl benzene sulfonate, and the mass percentage of the fatty alcohol-polyoxyethylene ether in the surfactant is 70%. The metal protective agent is a mixture of potassium sorbate and chloroethylene acetate. Wherein the mass ratio of the potassium sorbate to the chloroacetidine is 1: 1.
Example 2
The difference between example 2 and example 1 is: the photoresist stripping liquid comprises the following components in parts by weight: 50 parts of monoethanolamine, 0.01 part of surfactant, 0.01 part of metal protective agent and 25 parts of diethylene glycol monomethyl ether.
Example 3
The difference between example 3 and example 1 is: the photoresist stripping liquid comprises the following components in parts by weight: 75 parts of monoethanolamine, 3 parts of surfactant, 3 parts of metal protective agent and 50 parts of diethylene glycol monomethyl ether.
Example 4
The difference between example 4 and example 1 is: the photoresist stripping solution contains 0.5 part of surfactant and 0.25 part of metal protective agent.
Example 5
The difference between example 5 and example 1 is: the photoresist stripping solution contains 0.5 part of surfactant and 1 part of metal protective agent.
Example 6
The difference between example 6 and example 1 is: the metal protective agent is a mixture of sorbate, acetyl chloride pyridine, salicylic acid and methylbenzotriazole.
Example 7
The difference between example 7 and example 1 is: the surfactant is a mixture of fatty alcohol-polyoxyethylene ether, fatty alcohol-polyoxyethylene ether sulfate, sodium heavy alkyl benzene sulfonate and sodium alkyl benzene sulfonate.
In order to highlight the beneficial effects brought by the technical scheme of the embodiment of the application, the following comparative example is arranged.
Comparative example 1
The difference between comparative example 1 and example 1 is: does not contain metal protective agent and surface active agent.
Comparative example 2
The difference between comparative example 2 and example 1 is: no surfactant is contained.
Comparative example 3
The difference between comparative example 3 and example 1 is: the surfactant is p-xylylene dioctylphosphate sodium.
The photoresist stripping solutions prepared in the above examples and comparative examples were subjected to a stripping ability test and a metal corrosion test:
(1) and (3) testing stripping capability: a substrate provided with a Photoresist layer (thickness of 5 μm) was obtained by coating Photoresist (PR) on the substrate provided with copper and aluminum wirings and exposing the same. The substrate provided with the photoresist layer was immersed in the photoresist stripper solutions prepared in the above examples and comparative examples, and treated at 55 ℃ and 70 ℃ for 10 seconds, respectively. The substrate obtained after the peeling treatment was cleaned with pure water, blown dry with nitrogen gas, and the peeling condition of the photoresist on the surface was observed with a microscope. The results of the test of the stripping ability of the photoresist stripper prepared in each example and comparative example are summarized in table 1.
(2) And (3) testing metal corrosion: deionized water was added to the photoresist stripping solution prepared in example 1 above in various proportions to obtain a metal corrosion test solution (see table 2 for the composition of the test solution). Then, metal samples (aluminum samples and copper samples) each having a width of 2cm were immersed in the test solution, and after a predetermined time, the samples were taken out and subjected to SEM test to observe the corrosion of the samples. The metal corrosion test was performed to further verify the corrosion effect of the mixture of photoresist stripper and water on metals (copper and aluminum) during rinsing after stripper treatment.
TABLE 1 stripping Capacity test of resist stripping solutions prepared in examples and comparative examples
| Experiment number | Treatment at 55 deg.C | Treatment at 70 deg.C |
| Example 1 | No PR residue and no corrosion of wiring | No PR residue and no corrosion of wiring |
| Example 2 | No PR residue and no corrosion of wiring | No PR residue and no corrosion of wiring |
| Example 3 | No PR residue and no corrosion of wiring | No PR residue and no corrosion of wiring |
| Example 4 | No PR residue and no corrosion of wiring | No PR residue and no corrosion of wiring |
| Example 5 | No PR residue and no corrosion of wiring | No PR residue and no corrosion of wiring |
| Example 6 | No PR residue and no corrosion of wiring | No PR residue and no corrosion of wiring |
| Example 7 | No PR residue and no corrosion of wiring | No PR residue and no corrosion of wiring |
| Comparative example 1 | PR of at least 1/2 remains, and the wiring is etched | PR of at least 1/3 remains, and the wiring is etched |
| Comparative example 2 | PR of at least 1/2 remained, no corrosion of wiring | PR of at least 1/3 remained, no corrosion of wiring |
| Comparative example 3 | Has small amount of PR residue and no corrosion of wiring | Has very little PR residue and no corrosion of wiring |
TABLE 2 deionized Water content in Metal Corrosion test solutions
| Metal corrosion test liquid number | Percent of deionized water content/wt. -%) |
| S1 | 0 |
| S2 | 10 |
| S3 | 30 |
| S4 | 90 |
TABLE 3 Metal Corrosion test results
As can be seen from the results of the photoresist stripping ability test in Table 1, the photoresist stripper provided by the present application has high stripping cleanliness and no corrosion effect on the metals (copper and aluminum) in the substrate. And the photoresist stripping solution prepared by the comparative example is used for processing, under the same processing conditions, the photoresist stripping capability of the photoresist stripping solution is weaker, and residual photoresist still exists on the substrate.
Partial SEM observation results are shown in FIGS. 1 and 2, wherein FIG. 1 is an SEM photograph of an aluminum sample soaked in an S1 test solution for 300S, no corrosion phenomenon is observed on the surface of the aluminum sample, and the aluminum sample still has a compact surface layer; fig. 2 is an SEM photograph of the aluminum sample after being immersed in the test solution of S3 for 300S, and it can be observed that the surface of the aluminum sample is loose and slightly corroded. Table 3 summarizes the corrosion test results for the metals.
As can be seen from the data in table 3, when the substrate after the stripping treatment is cleaned, the organic amine in the photoresist stripper dissolves in water and ionizes out hydroxyl, which is corrosive to metallic aluminum and copper. When the substrate is cleaned by the immersion method, when the immersion time is too long, the organic amine remaining in the photoresist stripper is ionized in water to form a large amount of hydroxyl, thereby causing the metal (copper and aluminum) in the substrate to be corroded. Therefore, in practical production situations, the time for rinsing the substrate after the stripping treatment needs to be controlled to avoid damage to the substrate due to excessive rinsing.
The foregoing is illustrative of the present application and it will be appreciated by those skilled in the art that various modifications and adaptations can be made without departing from the principles of the application and are intended to be within the scope of the application.
Claims (10)
1. The photoresist stripping liquid is characterized by comprising the following components in parts by weight: 50-75 parts of organic amine, 0.01-3 parts of surfactant, 0.01-3 parts of metal protective agent and 25-50 parts of organic solvent; wherein the metal protective agent comprises at least one of sorbate and chloroethylene acetate; the surfactant comprises at least one of fatty alcohol-polyoxyethylene ether, fatty alcohol-polyoxyethylene ether sulfate and sodium heavy alkyl benzene sulfonate.
2. The photoresist stripping solution according to claim 1, wherein the surfactant comprises fatty alcohol-polyoxyethylene ether sulfate, at least one of sodium dialkylbenzenesulfonate and fatty alcohol-polyoxyethylene ether.
3. The photoresist stripper according to claim 1, wherein the surfactant further comprises sodium alkyl sulfonate.
4. The resist stripping solution according to any one of claims 1 to 3, characterized in that the mass ratio of the surfactant to the metal protecting agent is 1: (0.5-2).
5. The photoresist stripping solution according to claim 1, wherein the metal protectant further comprises at least one of salicylic acid and tolyltriazole.
6. The photoresist stripping solution according to claim 1, characterized in that the stripping solution comprises the following components in parts by weight: 68-72 parts of organic amine, 0.01-1 part of surfactant, 0.01-1 part of metal protective agent and 28-32 parts of organic solvent.
7. The resist stripping solution according to claim 1 or 6, wherein the organic amine comprises at least one of monoethanolamine, monoisopropanolamine, diethanolamine, triethanolamine, 2-amino-2-methyl-1-propanol, 2-methylaminoethanol, 3-aminopropanolamine, ethylenediamine.
8. The preparation method of the photoresist stripping liquid is characterized by comprising the following steps:
mixing organic amine, a surfactant, a metal protective agent and an organic solvent according to a certain proportion to obtain stripping liquid; the stripping liquid comprises the following components in parts by weight: 50-75 parts of organic amine, 0.01-3 parts of surfactant, 0.01-3 parts of metal protective agent and 25-50 parts of organic solvent; wherein the metal protective agent comprises at least one of sorbate and chloroethylene acetate; the surfactant comprises at least one of fatty alcohol-polyoxyethylene ether, fatty alcohol-polyoxyethylene ether sulfate and sodium heavy alkyl benzene sulfonate.
9. The application method of the photoresist stripping liquid is characterized by comprising the following steps:
exposing and curing the substrate coated with the photoresist;
contacting the photoresist stripper according to any one of claims 1-7 or the photoresist stripper prepared according to the preparation method of claim 8 with the cured photoresist to strip the cured photoresist;
and sequentially flushing and purging the substrate with the photoresist stripped.
10. The method of use according to claim 9, wherein the temperature of the peeling is 50 ℃ to 75 ℃; the stripping time is 10s-30 s.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115613040A (en) * | 2022-09-16 | 2023-01-17 | 崇辉半导体(江门)有限公司 | Photoresist removing liquid for removing photoresist overflowing from surface of copper substrate and preparation method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115613040A (en) * | 2022-09-16 | 2023-01-17 | 崇辉半导体(江门)有限公司 | Photoresist removing liquid for removing photoresist overflowing from surface of copper substrate and preparation method thereof |
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