CN114496690A - Plasma-resistant semiconductor component, forming method and plasma reaction device - Google Patents
Plasma-resistant semiconductor component, forming method and plasma reaction device Download PDFInfo
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- CN114496690A CN114496690A CN202011167677.6A CN202011167677A CN114496690A CN 114496690 A CN114496690 A CN 114496690A CN 202011167677 A CN202011167677 A CN 202011167677A CN 114496690 A CN114496690 A CN 114496690A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32495—Means for protecting the vessel against plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
Abstract
The invention relates to the technical field of semiconductor processing, and particularly discloses a method for forming a plasma corrosion resistant semiconductor part, which comprises the following steps: providing a first substrate, wherein the first substrate is provided with a first through hole in a penetrating mode; forming a second substrate in the first through hole; forming a dense corrosion-resistant coating on the first substrate and the second substrate; and carrying out local heating treatment on the corrosion-resistant coating and the second substrate to form a second through hole penetrating through the corrosion-resistant coating and the second substrate, and forming a dense layer on the inner side wall of the second through hole. The bonding force between the compact layer obtained by the method and the second substrate and the corrosion-resistant coating is stronger, so that the compact layer is not easy to be bombarded to form particle pollution when being bombarded by plasma, and the particle pollution is favorably reduced.
Description
Technical Field
The invention relates to the technical field of semiconductor processing, in particular to a plasma-resistant semiconductor part, a forming method and a plasma reaction device.
Background
In a typical plasma etch process, a process gas (e.g., CF)4、O2Etc.) are excited by Radio Frequency (RF) excitation to form a plasma. These plasmas pass through the electric field between the upper and lower electrodes (capacitive coupling)Or inductive coupling) to generate physical bombardment and chemical reaction with the surface of the wafer, thereby etching the wafer to have a specific structure and completing the etching process.
However, during plasma etching processes, physical bombardment and chemical reactions also act on the interior of the etching chamber, as well as all parts in contact with the plasma, causing erosion. Such as gas delivery and distribution devices, specifically such as showerheads, nozzles, liners, electrostatic chucks, and the like. After these devices deliver the process gas to the reaction chamber to form the plasma, the plasma erosion also occurs at the connections. When the wafer is exposed to a plasma corrosion environment for a long time, the surface structure is damaged, so that the components of the wafer body are separated out, and micro particles are formed on the surface of the wafer body to pollute the wafer.
With the further development of semiconductor manufacturing processes, more stringent requirements are placed on the fine particles. For example, the number of particles larger than 45nm is 0, and the contact area is even lower than 10, so that the reduction of the formation of the micro particle contamination source at the gas distribution device is of great significance for improving the plasma etching level.
Disclosure of Invention
The first purpose of the invention is to provide a method for forming a semiconductor part resistant to plasma corrosion, so as to solve the problem that a surface coating of the semiconductor part is easy to fall off in a plasma environment and reduce particle pollution.
In order to achieve the purpose, the technical scheme provided by the invention is as follows: a method of forming a semiconductor component resistant to plasma etching, comprising:
providing a first substrate, wherein the first substrate is provided with a first through hole in a penetrating mode;
forming a second substrate in the first through hole;
forming a corrosion-resistant coating on a surface of the second substrate, the corrosion-resistant coating being exposed to an environment of plasma;
and carrying out local heating treatment on the corrosion-resistant coating and the second substrate to form a second through hole penetrating through the corrosion-resistant coating and the second substrate, and forming a compact layer on the inner side wall of the second through hole.
Optionally, the second substrate is only located in the first through hole, and the corrosion-resistant coating is located on the surfaces of the first substrate and the second substrate.
Optionally, the second substrate is located in the first through hole and on the surface of the first substrate, and the corrosion-resistant coating is located on the surface of the second substrate.
Optionally, the second substrate surface has a positioning feature structure, where the positioning feature structure includes a pin hole and a concave-convex structure, and is used for positioning the second through hole before the local heating treatment.
Optionally, the diameter of the first through hole is larger than the diameter of the second through hole.
Optionally, the local heating treatment comprises one or more of pulsed laser heating or pulsed electron beam heating.
Optionally, the energy density of the pulse laser heating is 100W/mm2～5000W/mm2The energy density of the pulse electron beam heating is 100W/mm2～5000W/mm2。
Optionally, the dense layer is of a crystalline structure.
Optionally, the material of the corrosion-resistant coating includes: at least one of an oxide, fluoride or oxyfluoride of a rare earth element; the corrosion-resistant coating is formed by at least one of a physical vapor deposition method, a chemical vapor deposition method or an atomic layer deposition method.
Optionally, the material of the second substrate is a plasma-resistant material; the process for forming the second substrate is a spraying process or a hot-pressing sintering process.
Optionally, the density of the corrosion-resistant coating is as follows: 95 to 100 percent.
Optionally, the density of the second substrate is 85% to 100%.
Optionally, the density of the dense layer is as follows: 98 to 100 percent.
Optionally, the second substrate is only located in the first through hole, and the corrosion-resistant coating is located on the surfaces of the first substrate and the second substrate.
Optionally, the second substrate is located on the surface of the first substrate and in the first through hole, and the corrosion-resistant coating is located on the surface of the second substrate.
Optionally, the ratio of the depth to the width of the second through hole ranges from 1:1 to 100: 1.
Optionally, when the second through hole is of a circular structure, the aperture range of the second through hole is 0.01 mm-2 mm.
Optionally, the corrosion-resistant coating comprises at least one of rare earth elements Y, Sc, La, Ce, Pr, Nd, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb or Lu.
Optionally, the corrosion-resistant coating comprises at least one of an oxide, fluoride or oxyfluoride of a rare earth element.
Accordingly, there is provided a semiconductor component comprising:
a first substrate having a first through hole formed therein;
a second substrate located within the first via;
the corrosion-resistant coating is positioned on the surface of the second substrate;
a second through hole penetrating through the second substrate and the corrosion-resistant coating;
and the dense layer is positioned on the inner side wall of the second through hole.
Accordingly, there is provided a plasma reaction apparatus comprising:
a reaction chamber, wherein a plasma environment is arranged in the reaction chamber;
a semiconductor component, the corrosion-resistant coating being exposed to the plasma environment.
Optionally, the plasma comprises at least one of a F-containing plasma, a Cl-containing plasma, an H-containing plasma, or an O-containing plasma.
Optionally, the plasma reaction device is a plasma etching device or a plasma cleaning device.
Optionally, the plasma etching apparatus is a capacitively coupled plasma reaction apparatus, and the semiconductor component includes at least one of a showerhead and an electrostatic chuck.
Optionally, the plasma etching apparatus is an inductively coupled plasma reaction apparatus, and the semiconductor component includes at least one of a gas nozzle, a bushing, or an electrostatic chuck.
Compared with the prior art, the invention has the following beneficial effects:
in the method for forming a semiconductor component, the first substrate has a first through hole penetrating through the first substrate, the first through hole is used for accommodating a second substrate, the second substrate and the first substrate are provided with corrosion-resistant coatings, forming a second through-hole penetrating the second substrate and the corrosion-resistant coating by locally heating and melting part of the corrosion-resistant coating and the second substrate, meanwhile, a dense layer is formed on the inner side wall of the second through hole and has better corrosion resistance, so that the dense layer can resist the corrosion of plasma, meanwhile, the dense layer is formed by melting the second substrate and the corrosion-resistant coating layer by heating, and therefore, the bonding force between the dense layer and the second substrate and between the dense layer and the corrosion-resistant coating is strong, so that the dense layer is not easy to be bombarded down to form particle pollution when being bombarded by plasma, and the particle pollution is favorably reduced.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.
FIG. 1 is a schematic view of a plasma reaction apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a semiconductor device according to a first embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a semiconductor device according to a second embodiment of the present invention;
FIG. 4 is a flow chart of a method of forming a semiconductor component according to an embodiment of the present invention;
FIG. 5 is a schematic view of a first substrate structure according to an embodiment of the invention;
FIG. 6 is a schematic structural diagram of a first substrate and a second substrate according to an embodiment of the present invention;
FIG. 7 is a schematic view of a corrosion resistant coating structure according to an embodiment of the present invention;
FIG. 8 is a schematic illustration of a dense layer structure according to an embodiment of the present invention.
Reference numerals:
100-a reaction chamber; 101-a base; 102-a shower head; 103-an electrostatic chuck;
201-a first substrate; 202-a second substrate;
300-corrosion resistant coating; 400-a first via; 500-a second via; 600-a dense layer;
w-wafer.
Detailed Description
In order to solve the technical problems, the embodiment of the invention provides a method for forming a semiconductor part resistant to plasma corrosion, an embodiment of a semiconductor part obtained by the method and an embodiment of a plasma reaction device comprising the semiconductor part.
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that all the directional indicators (such as up, down, left, right, front, and rear … …) in the embodiment of the present invention are only used to explain the relative position relationship between the components, the movement situation, etc. in a specific posture (as shown in the drawing), and if the specific posture is changed, the directional indicator is changed accordingly.
It will also be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present.
In addition, the descriptions related to "first", "second", etc. in the present invention are for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicit indication of the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the feature. In addition, technical solutions between various embodiments may be combined with each other, but must be realized by a person skilled in the art, and when the technical solutions are contradictory or cannot be realized, such a combination should not be considered to exist, and is not within the protection scope of the present invention.
FIG. 1 is a schematic structural diagram of a plasma reactor according to the present invention.
Referring to fig. 1, the plasma reaction apparatus includes: the reaction chamber 100 is a plasma environment inside the reaction chamber 100, and the semiconductor components and the inner chamber wall of the reaction chamber 100 are exposed to the plasma environment.
The plasma reaction device further includes: the plasma processing device comprises a base 101, wherein the base 101 is used for bearing a substrate W to be processed, and the plasma is used for processing the substrate W to be processed. Since plasma has strong corrosiveness, in order to prevent the surface of the semiconductor component from being corroded by plasma, it is necessary to coat the surface of the semiconductor component with a corrosion-resistant coating.
In this embodiment, the plasma reaction device is a capacitively coupled plasma reaction device, and accordingly, the semiconductor component exposed to the plasma environment includes: a showerhead 102 and an electrostatic chuck 103.
In other embodiments, the plasma reaction device is an inductively coupled plasma reaction device, and accordingly, the semiconductor component exposed to the plasma environment includes: at least one of a bushing and a gas nozzle.
In the plasma etching process, physical bombardment and chemical reaction also act on all semiconductor parts in the etching cavity, which are in contact with the plasma, so that the semiconductor parts are corroded, and the surface structure is damaged after being exposed in the plasma corrosion environment for a long time, so that the body components are separated out, and are separated from the surface to form micro particles, thereby polluting the wafer. The semiconductor system has severe requirements for micro particle contamination, for example, the number of particles larger than 45nm is 0, and the ground contact rate is even lower than 10.
Therefore, it is necessary to coat the surface of the semiconductor component in the plasma reaction apparatus with a corrosion-resistant coating to resist the corrosion by plasma. For the semiconductor parts with holes exposed in the plasma environment, because the holes of the semiconductor parts are also contacted with plasma, a corrosion-resistant coating is also formed on the inner walls of the holes to resist the invasion of the plasma to the semiconductor parts on the inner walls of the holes.
The surface of the semiconductor part in the plasma reaction device of the embodiment has the plasma-resistant coating, the growth direction of crystal grains of the plasma-resistant coating is parallel to the normal direction of the contact surface of the plasma-resistant coating, so that the plasma-resistant coating has strong bonding force with the contact surface of the plasma-resistant coating and is not easy to fall off, and the surface of the inner side wall of the hole is also provided with the compact layer, and the compact layer is formed by melting the materials of the second substrate and the corrosion-resistant coating, so that the bonding force between the compact layer and the second substrate as well as the plasma-resistant coating is stronger. The semiconductor parts are placed in the plasma environment, are not easy to corrode by the plasma, and can reduce the risk of particle formation caused by the bombardment of the plasma. The problem that the bonding force between a corrosion-resistant coating formed on the inner wall of a hole and a substrate in the prior art is weak is solved, and the problem that the coating inside the hole of a semiconductor part gradually falls off from a workpiece to form tiny particles scattered inside a cavity after being continuously subjected to the physical bombardment and chemical reaction of plasma is further solved.
The semiconductor components are explained in detail below:
fig. 2 is a schematic diagram of a semiconductor component according to an embodiment of the present invention.
Referring to fig. 2, the embodiment specifically includes a first substrate 201 and a second substrate 202, wherein the first substrate 201 has a first through hole 400 formed therein, and the second substrate 202 is disposed in the first through hole 400 and on a surface of the first substrate 201; a corrosion-resistant coating 300 is arranged on the surface of the second substrate 202; and the corrosion-resistant coating further comprises a second through hole 500, wherein the second through hole 500 penetrates through the second substrate 202 and the corrosion-resistant coating 300, and a dense layer 600 is further arranged on the inner side wall of the second through hole 500.
The surface of the second substrate 202 is provided with the corrosion-resistant coating 300, the corrosion-resistant coating 300 is formed through a physical vapor deposition process, and in the forming process, the growth direction of crystal grains of the corrosion-resistant coating 300 is consistent with the normal direction of a contact surface, so that the bonding force between the corrosion-resistant coating 300 and the contact surface is strong, and the corrosion-resistant coating is not easy to fall off under the bombardment of plasma to form particle pollution. And, the density of the corrosion-resistant coating 300 is 95% -100%, namely: the corrosion-resistant coating 300 has a dense structure, and the corrosion-resistant coating 300 can better protect the surface of the second substrate 202 and prevent the surface of the second substrate 202 from being corroded by plasma.
Meanwhile, the surface of the inner side wall of the second through hole 500 is provided with a dense layer 600, and the density of the dense layer 600 is 98% -100%, namely: the dense layer also has a dense structure, so that the dense layer 600 has a strong plasma corrosion resistance, and the dense layer can better protect the surface of the second substrate 202 and prevent the second substrate 202 from being bombarded to form particle pollution. In addition, the dense layer 600 is formed by heating and melting the corrosion-resistant coating 300 and the second substrate 202, so that the dense layer 600 has a strong binding force with the corrosion-resistant coating 300 and the second substrate 202, instead of forming the corrosion-resistant layer on the inner wall of the hole of the semiconductor component by a physical vapor deposition process, the problem of weak binding force between the corrosion-resistant layer and the inner wall of the hole due to the fact that the growth direction of the corrosion-resistant layer formed in the hole deviates from the normal direction of the inner wall of the hole is solved, the dense layer is not easy to fall off, and particle pollution to the environment of the reaction chamber is avoided.
In this embodiment, second substrate 202 is subsequently required as a raw material for forming dense layer 600, and thus dense layer 600 also has corrosion resistance. The density of the second substrate 202 is 85% to 99%, specifically, the density of the second substrate 202 is 85% to 99% by using a plasma-resistant coating, or the density of the second substrate 202 is 90% to 96% by using a corrosion-resistant ceramic. Since the second substrate 202 is not directly exposed to the plasma environment, the second substrate 202 has a corrosion resistance requirement that is slightly lower than the corrosion-resistant coating 300 and the dense layer 600. And the density of the dense layer 600 is greater than the density of the second substrate 202 and the corrosion-resistant coating 300, because the dense layer 600 is prepared by heating and melting, compared with spraying and physical vapor deposition methods, the dense layer obtained by the process has higher density.
In the present embodiment, the ratio of the depth to the width of the second through hole 500 ranges from 1:1 to 100: 1.
In this embodiment, the second through hole 500 has a circular structure, and the aperture thereof ranges from 0.01mm to 2 mm.
In this embodiment, the diameter of the first through hole 400 is larger than that of the second through hole 500.
In this embodiment, the corrosion-resistant coating 300 includes at least one of the rare earth elements Y, Sc, La, Ce, Pr, Nd, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, or Lu, and at least one of the oxides, fluorides, or oxyfluorides of the above-mentioned rare earth elements. The corrosion-resistant coating prepared from the rare earth elements has the plasma resistance and can not bring other metal pollution.
In this embodiment, the second substrate 202 is located on the surface of the first substrate 201 and within the first through-hole 400 of the first substrate 201, and the corrosion-resistant coating 300 is located on the surface of the second substrate 202. In such a structure, the first substrate 201 can support the second substrate 202, and the interface separation and even the peeling-off of the second substrate 202 from the first substrate 201 due to the accumulation of thermal stress when the corrosion-resistant coating 300 and the second substrate 202 are subjected to the local heat treatment can be avoided.
In another embodiment, as shown in fig. 3, the second substrate 202 is located only within the first via 400, and the corrosion-resistant coating 300 is located on the surfaces of the first substrate 201 and the second substrate 202. The second substrate 202 is only located in the first through hole 400, which can save materials and reduce cost.
FIG. 4 is a flow chart of a method for forming a semiconductor component resistant to plasma etching in accordance with an embodiment of the present invention.
Referring to fig. 4, step S1: providing a first substrate, wherein the first substrate is provided with a first through hole in a penetrating way; step S2: forming a second substrate in the first through hole; step S3: forming a corrosion-resistant coating on the first substrate and the second substrate; step S4: and carrying out local heating treatment on the corrosion-resistant coating and the second substrate to form a second through hole penetrating through the corrosion-resistant coating and the second substrate, and forming a dense layer on the inner side wall of the second through hole.
The method of forming the semiconductor component is described in detail as follows:
fig. 5 to 8 are schematic structural diagrams of steps of a method for forming a semiconductor device according to the present invention.
Referring to fig. 5, the first substrate 201 has a first through hole 400 therein.
In one embodiment, the material of the first substrate 201 is a metal base, and the first substrate 201 provides a cavity structure supporting function. The material of the first substrate 201 may be the same as that of the second substrate 202, and both may be corrosion-resistant ceramics, and in this case, the first substrate 201 and the second substrate 202 are of an integral structure, so that there is no interface between the first substrate 201 and the second substrate 202. Since the first substrate 201 and the second substrate 202 made of the same material have the same material structure as the first substrate 201 and the second substrate 202 made of different materials, the problem of interface bonding failure does not occur.
Referring to fig. 6, a second substrate 202 is formed within the first via 400.
In this embodiment, the material of the second substrate 202 is a corrosion-resistant material, and the second substrate 202 is subsequently used as a raw material for forming the dense layer 600, so that the second substrate has corrosion resistance. The plasma corrosion resistant ceramic or coating can be a plasma corrosion resistant ceramic or coating, and a compact structure can be formed after the plasma corrosion resistant ceramic or coating is melted. The process of forming the second substrate 202 is a spray coating process or a hot press sintering process, and the second substrate 202 is bonded to the first substrate 201.
In the present embodiment, the second substrate 202 is located not only within the first through-hole 400 but also on the surface of the first substrate 201.
In other embodiments, the second substrate 202 may be located only within the first via 400.
In the embodiment where the second substrate 202 is located in the first through hole 400 and on the surface of the first substrate 201, the first substrate 201 can support the second substrate 202, so that the contact area between the second substrate 202 and the first substrate 201 includes not only the inner sidewall of the first through hole 400 but also the surface of the first substrate 201, and the bonding force between the first substrate 201 and the second substrate 202 is strong.
The surface of the second substrate 202 has a positioning feature, which includes a pin hole, a bump, and a snap-fit structure, for positioning the second through hole 500 before the local heating process.
Referring to fig. 7, a corrosion-resistant coating 300 is formed on the second substrate 202 and the first substrate.
In this embodiment, the corrosion-resistant coating 300 includes at least one of the rare earth elements Y, Sc, La, Ce, Pr, Nd, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, or Lu, and at least one of the oxides, fluorides, or oxyfluorides of the above-mentioned rare earth elements. The corrosion-resistant coating prepared from the rare earth elements has the plasma resistance and can not bring other metal pollution. The formation process of the corrosion-resistant coating 300 is at least one of a physical vapor deposition method, a chemical vapor deposition method or an atomic layer deposition method, and the coating obtained by the formation processes has a compact structure, is not easy to fall off, and has good corrosion resistance. The corrosion-resistant coating 300 serves two functions, one to resist corrosion by the plasma and the other to provide a raw material for subsequent formation of the dense layer 600.
After the corrosion-resistant coating 300 is formed, the location of the locating feature is transferred up through the corrosion-resistant coating 300, and then the location of the subsequent localized heat treatment is determined with the localized location transferred to the corrosion-resistant coating 300.
Referring to fig. 8, the corrosion-resistant coating 300 and the second substrate 202 are locally heat treated to form a second via 500 through the corrosion-resistant coating 300 and the second substrate 202, and a dense layer 600 is formed on the inner sidewall of the second via 500. In the present embodiment, the corrosion-resistant coating 300 is formed by at least one of a physical vapor deposition method, a chemical vapor deposition method, or an atomic layer deposition method, that is: the corrosion-resistant coating 300 is formed by transforming gaseous molecules and atomic groups into a solid state through nucleation and growth, and has a compact characteristic; the process of the second substrate 202 is a spraying process or a hot-pressing sintering process, that is: the second substrate 202 is a solid coating formed by solid particles through a transient liquid phase or high temperature sintering process, and grains shrink, and has a compact characteristic lower than that of the corrosion-resistant coating 300, and the dense layer 600 is a process in which the coating 300 and the substrate 202 solid are melted by local heating and transformed into a melt, and then cooled and transformed into a solid state, and fine pores between solid grains are released during the melting and cooling process, so that the dense layer 600 formed on the side walls of the second through holes 500 has a higher density than that of the corrosion-resistant coating 300 and the substrate 202.
In the process of forming the dense layer 600 by local heating, in order to avoid the peeling-off phenomenon of the corrosion-resistant coating 300 caused by the excessive local thermal expansion between the corrosion-resistant coating 300 and the substrate 202, the following measures can be taken: on one hand, the duty ratio of pulse heating is adjusted to ensure that the corrosion-resistant coating 300 and the substrate 202 have sufficient time for cooling and releasing local thermal stress; on the other hand, cooling is assisted by refrigeration, e.g. using He, N2And dry ice, liquid nitrogen and the like to carry out local temperature reduction and further release local thermal stress.
In this embodiment, the dense layer 600 has a stable crystalline structure, so that the performance of the dense layer 600 is stable, the surface maintains a stable structure when subjected to physical bombardment and chemical corrosion of plasma, and the performance of the etching cavity is not easy to drift.
The local heating treatment process comprises the following steps: the second substrate 202 and the surface corrosion-resistant coating 300 are locally melted and rapidly cooled by pulse laser melting or pulse electron beam melting.
Adopting a pulse laser heating mode, and the used energy density is 100W/mm2～5000W/mm2The energy density is 100W/mm by adopting a pulse electron beam heating mode2～5000W/mm2。
By means of pulse laser or pulse electron beam heating, three functions can be achieved: firstly, a second through hole 500 is formed by means of a non-direct contact heating mode, so that the problem of metal pollution caused by machining of a drill bit can be avoided; the radius of action of the laser or electron beam is small, so that local melting can be effectively carried out to form a through hole structure with a compact structure, the compact characteristic of the inner wall of the characteristic hole can be kept, the corrosion resistance is high, and meanwhile, the formation of tiny particles can be avoided; and thirdly, the second substrate 202 and the corrosion-resistant coating 300 are processed in a local melting-cooling-melting-cooling mode in a pulse heating mode, so that the shape failure of the corrosion-resistant coating 300 or the second substrate 202 caused by the overlarge accumulation and deformation of the first substrate 201 due to thermal expansion can be avoided, and the precise structure of the characteristic through hole can be effectively protected.
The corrosion-resistant coating and the second substrate material are melted in a pulse laser or pulse electron beam heating mode, the corrosion-resistant coating and the second substrate are changed into a molten state from a solid state, the material in the molten state is in a long-range disordered state at the moment, the material in the molten state is cooled and then changed into a long-range ordered solid compact layer again, and the compact layer obtained in the similar remanufacturing process has the characteristic of high compactness.
In other embodiments, the structure of the second through hole 500 may also be at least one of a stepped hole, and an inclined hole combination hole.
In summary, the surface of the hole structure of the semiconductor component provided by the embodiment of the invention has the dense layer, so that metal pollution and micro particle pollution caused by corrosion of plasma on the hole structure of the semiconductor component can be reduced, and the plasma etching level can be improved. According to the forming method of the semiconductor part resistant to plasma corrosion, provided by the embodiment of the invention, the compact coating can be formed on the surface and the porous surface of the semiconductor part, the obtained coating is not easy to fall off, and the risk of particle pollution is reduced. The semiconductor parts in the plasma reaction device provided by the embodiment of the invention are provided with the corrosion-resistant coating, the corrosion of the plasma can be resisted, the coating is not easy to fall off, the particle pollution of the working environment in the reaction cavity is reduced, and the finished product rate of the plasma reaction device product preparation is further improved.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, and all modifications and equivalents of the present invention, which are made by the contents of the present specification and the accompanying drawings, or directly/indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (25)
1. A method of forming a semiconductor component resistant to plasma etching, comprising:
providing a first substrate, wherein the first substrate is provided with a first through hole in a penetrating mode;
forming a second substrate in the first through hole;
forming a corrosion-resistant coating on a surface of the second substrate, the corrosion-resistant coating being exposed to an environment of plasma;
and carrying out local heating treatment on the corrosion-resistant coating and the second substrate to form a second through hole penetrating through the corrosion-resistant coating and the second substrate, and forming a compact layer on the inner side wall of the second through hole.
2. The method of claim 1, wherein the second substrate is only located within the first via, and the corrosion-resistant coating is located on a surface of the first and second substrates.
3. The method of claim 1, wherein the second substrate is positioned within the first via and on a surface of the first substrate, and the corrosion-resistant coating is positioned on a surface of the second substrate.
4. The method of claim 1, wherein the second substrate surface has alignment features including pin holes and indentations for positioning the second through holes prior to the localized heat treatment.
5. The method of claim 1, wherein the first via diameter is larger than the second via diameter.
6. The method of claim 1, wherein the localized heating process comprises one or more of pulsed laser heating or pulsed electron beam heating.
7. The method of claim 6, wherein the pulsed laser heating has an energy density of 100W/mm2～5000W/mm2The energy density of the pulse electron beam heating is 100W/mm2～5000W/mm2。
8. The method of claim 1, wherein the dense layer has a crystalline structure.
9. The method of claim 1, wherein the material of the corrosion-resistant coating comprises: at least one of an oxide, fluoride or oxyfluoride of a rare earth element; the forming process of the corrosion-resistant coating is at least one of a physical vapor deposition method, a chemical vapor deposition method or an atomic layer deposition method.
10. The method of claim 1, wherein the second substrate is made of a plasma-resistant material; the process for forming the second substrate is a spraying process or a hot-pressing sintering process.
11. The method of claim 1, wherein the corrosion-resistant coating has a density of: 95 to 100 percent.
12. The method according to claim 1, wherein the density of the second substrate is 85% to 100%.
13. The method of claim 1, wherein the dense layer has a density of: 98 to 100 percent.
14. The method of claim 1, wherein the second substrate is disposed only within the first via, and the corrosion-resistant coating is disposed on a surface of the first and second substrates.
15. The method of claim 1, wherein the second substrate is positioned on the surface of the first substrate and within the first via, and the corrosion-resistant coating is positioned on the surface of the second substrate.
16. The method according to claim 1, wherein the ratio of the depth to the width of the second through hole is in a range of 1:1 to 100: 1.
17. The method according to claim 1, wherein the second through hole has a diameter ranging from 0.01mm to 2mm when the second through hole has a circular configuration.
18. The method of claim 1, wherein the corrosion-resistant coating comprises at least one of the rare earth elements Y, Sc, La, Ce, Pr, Nd, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, or Lu.
19. The method of claim 1, wherein the corrosion-resistant coating comprises at least one of an oxide, fluoride, or oxyfluoride of a rare earth element.
20. A semiconductor component manufactured by the method for forming a plasma-erosion resistant semiconductor component according to any one of claims 1 to 19, comprising:
a first substrate having a first through hole formed therein;
a second substrate located within the first via;
the corrosion-resistant coating is positioned on the surface of the second substrate;
a second through hole penetrating through the second substrate and the corrosion-resistant coating;
and the dense layer is positioned on the inner side wall of the second through hole.
21. A plasma reaction apparatus, comprising:
a reaction chamber, wherein a plasma environment is arranged in the reaction chamber;
the semiconductor component as claimed in any one of claims 20, the corrosion-resistant coating being exposed to the plasma environment.
22. A plasma reactor as claimed in claim 21, wherein the plasma comprises at least one of a F-containing plasma, a Cl-containing plasma, an H-containing plasma or an O-containing plasma.
23. A plasma reactor device as claimed in claim 21, wherein the plasma reactor device is a plasma etching device or a plasma cleaning device.
24. The plasma reactor of claim 23, wherein the plasma etching apparatus is a capacitively coupled plasma reactor and the semiconductor component comprises at least one of a showerhead or an electrostatic chuck.
25. A plasma reactor apparatus as claimed in claim 23, wherein the plasma etching apparatus is an inductively coupled plasma reactor apparatus and the semiconductor component comprises at least one of a gas nozzle, a liner, or an electrostatic chuck.
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| CN202011167677.6A CN114496690A (en) | 2020-10-27 | 2020-10-27 | Plasma-resistant semiconductor component, forming method and plasma reaction device |
| TW110129109A TWI807383B (en) | 2020-10-27 | 2021-08-06 | Plasma-resistant semiconductor component, method for forming same, and plasma reaction device |
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| CN202011167677.6A CN114496690A (en) | 2020-10-27 | 2020-10-27 | Plasma-resistant semiconductor component, forming method and plasma reaction device |
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| TWI695822B (en) * | 2007-04-27 | 2020-06-11 | 美商應用材料股份有限公司 | Method and apparatus which reduce the erosion rate of surfaces exposed to halogen-containing plasmas |
| US9711334B2 (en) * | 2013-07-19 | 2017-07-18 | Applied Materials, Inc. | Ion assisted deposition for rare-earth oxide based thin film coatings on process rings |
| US9869013B2 (en) * | 2014-04-25 | 2018-01-16 | Applied Materials, Inc. | Ion assisted deposition top coat of rare-earth oxide |
| US10975469B2 (en) * | 2017-03-17 | 2021-04-13 | Applied Materials, Inc. | Plasma resistant coating of porous body by atomic layer deposition |
| KR20190057753A (en) * | 2017-11-20 | 2019-05-29 | (주)코미코 | Method for Producing Plasma-Resistant Coating Layer and Plasma-Resistant Member Formed by the Same |
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