CN114479658B - Mask adhesive for SE doping and preparation method and application thereof - Google Patents
Mask adhesive for SE doping and preparation method and application thereof Download PDFInfo
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- CN114479658B CN114479658B CN202210000180.8A CN202210000180A CN114479658B CN 114479658 B CN114479658 B CN 114479658B CN 202210000180 A CN202210000180 A CN 202210000180A CN 114479658 B CN114479658 B CN 114479658B
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- mask
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- 239000000853 adhesive Substances 0.000 title claims abstract description 26
- 230000001070 adhesive effect Effects 0.000 title claims abstract description 26
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 59
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 57
- 239000010703 silicon Substances 0.000 claims abstract description 57
- 239000000843 powder Substances 0.000 claims abstract description 25
- 229920005989 resin Polymers 0.000 claims abstract description 20
- 239000011347 resin Substances 0.000 claims abstract description 20
- 239000003292 glue Substances 0.000 claims abstract description 18
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 20
- 229910052796 boron Inorganic materials 0.000 claims description 20
- 239000000203 mixture Substances 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 238000003756 stirring Methods 0.000 claims description 16
- 238000009792 diffusion process Methods 0.000 claims description 13
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 12
- 238000007639 printing Methods 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 8
- 238000007650 screen-printing Methods 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 7
- 239000010453 quartz Substances 0.000 claims description 6
- 239000005388 borosilicate glass Substances 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 4
- 239000003960 organic solvent Substances 0.000 abstract description 6
- 239000002562 thickening agent Substances 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 9
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 9
- 239000011521 glass Substances 0.000 description 8
- 238000000151 deposition Methods 0.000 description 6
- 229920002050 silicone resin Polymers 0.000 description 4
- 229910052580 B4C Inorganic materials 0.000 description 3
- 239000000440 bentonite Substances 0.000 description 3
- 229910000278 bentonite Inorganic materials 0.000 description 3
- SVPXDRXYRYOSEX-UHFFFAOYSA-N bentoquatam Chemical compound O.O=[Si]=O.O=[Al]O[Al]=O SVPXDRXYRYOSEX-UHFFFAOYSA-N 0.000 description 3
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 3
- 229910021485 fumed silica Inorganic materials 0.000 description 3
- 239000011863 silicon-based powder Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000005034 decoration Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000012188 paraffin wax Substances 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- 239000005368 silicate glass Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000010023 transfer printing Methods 0.000 description 2
- 238000002679 ablation Methods 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- -1 aryl silicon Chemical compound 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001638 boron Chemical class 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
- C09D7/40—Additives
- C09D7/60—Additives non-macromolecular
- C09D7/61—Additives non-macromolecular inorganic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
- H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses mask glue for SE doping and a preparation method and application thereof. The mask adhesive comprises the following components in parts by weight: 15-20 parts of organic silicon resin, 55-65 parts of organic solvent, 15-20 parts of insulating powder, 1-3 parts of temperature-resistant adhesive and 1-3 parts of thickening agent. When the boron-doped selective emitter is prepared, the mask glue is locally deposited on the surface of the BSG layer, so that the SE structure can be prepared by high-temperature propulsion under the condition of not removing the BSG layer, the process steps can be reduced, and the cost is reduced.
Description
Technical Field
The invention relates to the field of photovoltaics, in particular to mask glue for SE doping and a preparation method and application thereof.
Background
Due to the advantages of long minority carrier lifetime, low temperature coefficient, no photo-thermal induced attenuation caused by B-O recombination and the like, the N-type crystalline silicon cell becomes the key development direction of a new generation of efficient solar cell and is more and more concerned by the industry. The existing mature N-type crystalline silicon battery mainly comprises N-PERT, N-PERL, N-TOPCon, N-IBC and other structural batteries.
The Selective Emitter Structure (SE) realizes the optimization of the Emitter region by carrying out heavy doping in the electrode contact region and light doping between the electrodes, so that the contact resistance between a metal electrode and a silicon wafer can be reduced, the carrier recombination in a diffusion layer region can be reduced, the output voltage and the current of a battery are enhanced, and the efficiency of the battery can be obviously improved.
In the industry, the main mode of efficiency improvement is that SE adopts a laser doping technology, and a laser BSG (boron silicate glass) doping method is to perform laser scanning by using a boron silicate glass layer generated during diffusion as a doping source to form a heavily doped region. The production line of the solar cell with the laser-doped selective emitter only needs to add one step of laser doping, and only needs to add laser equipment for doping from the equipment, but the laser equipment for doping is high in price and high in use cost, and laser inevitably generates large ablation damage to substrate silicon, so that a suede structure is influenced, composite damage is brought, and the improvement of cell efficiency is influenced.
Disclosure of Invention
The invention provides mask glue for SE doping, which comprises the following components in parts by weight:
preferably, the organic silicon resin is selected from one or more of polymethyl silicon resin, polyethyl silicon resin, polyaryl silicon resin and polyalkyl aryl silicon resin.
Preferably, the organic solvent is one or more selected from toluene, ethyl acetate, acetone and paraffin.
Preferably, the insulating powder is selected from one or more of boron carbide, silicon powder and quartz micro powder.
Preferably, the temperature-resistant adhesive is one or more selected from lead-based low-melting-point glass powder, boron-based low-melting-point glass powder, special low-melting-point glass powder and borosilicate glass powder.
Preferably, the thickener is one or more selected from fumed silica, bentonite, diatomite and silica gel.
The invention also provides a preparation method of the mask adhesive for SE doping, which comprises the following steps: at room temperature, mixing and stirring uniformly 15-20 parts by weight of organic silicon resin, 55-65 parts by weight of organic solvent, 15-20 parts by weight of insulating powder, 1-3 parts by weight of temperature-resistant adhesive and 1-3 parts by weight of thickening agent, grinding by a three-roll grinder and defoaming by a vacuum defoaming machine to prepare the mask rubber for SE doping.
The invention also provides a preparation method of the boron-doped selective emitter, which is characterized in that a BSG layer is deposited on the surface of the textured silicon wafer; then, locally depositing a mask adhesive on the surface of the BSG layer to form a mask layer, so that the coverage area of the mask layer is consistent with the metal electrode printing area on the surface of the silicon wafer; then, carrying out high-temperature propulsion on the silicon wafer; then removing the BSG layer and the mask layer on the silicon wafer; wherein, the mask glue adopts the mask glue for SE doping.
Preferably, the mask paste is deposited by screen printing, ink jet printing, transfer printing or spraying.
Preferably, the silicon wafer is advanced at high temperature in a tube furnace or a chain furnace.
Preferably, the BSG layer and the mask layer on the silicon wafer are removed by using a cleaning solution containing HF.
The invention has the advantages and beneficial effects that: when the boron-doped selective emitter is prepared, the mask glue is locally deposited on the surface of the BSG layer, so that the SE structure can be prepared by high-temperature propulsion under the condition of not removing the BSG layer, the process steps can be reduced, and the cost is reduced.
The mask adhesive disclosed by the invention has the following functions of components:
1) The dissolved viscosity of the organic silicon resin in the mask glue is suitable for printing; the coating is high-temperature resistant and is suitable for coating parts needing high temperature; the cleaning is easy, and the surface slurry can be rapidly removed after the doping is finished;
2) The organic solvent in the mask glue can completely dissolve the organic silicon resin into a transparent solution with certain viscosity, so that the subsequent raw material addition and the screen printing of the finished mask glue can be facilitated;
3) The insulating powder in the mask adhesive has a passivation effect, plays a role in isolating air in a formula and inhibits boron in a silicon wafer from diffusing into BSG;
4) The heat-resistant adhesive in the mask adhesive can bond the uniformly mixed insulating powder in the formula to form a compact structure, thereby playing a role in protection;
5) The thickening agent in the mask glue can adjust the mask glue to a proper viscosity for printing.
The preparation method of the boron-doped selective emitter has the following characteristics:
1. according to the invention, a layer of mask glue is covered on the surface of the deposited BSG layer, the covered area is consistent with the metal electrode printing area on the surface of the silicon wafer, and the SE structure can be prepared by high-temperature propulsion in a tubular or chain type diffusion furnace under the condition of not removing the BSG layer;
2. after the mask is covered, the diffusion of boron in the electrode area to the environment atmosphere can be inhibited when the mask is subsequently pushed at high temperature in a tubular or chain type diffusion furnace.
Detailed Description
The following further describes embodiments of the present invention with reference to examples. The following examples are only for illustrating the technical solutions of the present invention more clearly, and the protection scope of the present invention is not limited thereby.
The invention provides mask glue for SE doping, which is prepared by the following steps: mixing and stirring uniformly 15-20 parts by weight of organic silicon resin, 55-65 parts by weight of organic solvent, 15-20 parts by weight of insulating powder, 1-3 parts by weight of temperature-resistant adhesive and 1-3 parts by weight of thickening agent at room temperature, grinding by a three-roll grinder and defoaming by a vacuum defoaming machine to prepare mask rubber for SE doping;
wherein:
the organic silicon resin is selected from one or more of polymethyl silicon resin, polyethyl silicon resin, polyaryl organic silicon resin and polyalkyl aryl organic silicon resin;
the organic solvent is one or more selected from toluene, ethyl acetate, acetone and paraffin.
The insulating powder is selected from one or more of boron carbide, silicon powder and quartz micro powder;
the temperature-resistant adhesive is selected from one or more of lead-series low-melting-point glass powder, boron-series low-melting-point glass powder, special low-melting-point glass powder and borosilicate glass powder;
the thickening agent is selected from one or more of fumed silica, bentonite, diatomite and silica gel.
The invention also provides a preparation method of the boron-doped selective emitter, which is characterized in that a BSG layer is deposited on the surface of the textured silicon wafer; then, locally depositing a mask adhesive on the surface of the BSG layer to form a mask layer, so that the coverage area of the mask layer is consistent with the metal electrode printing area on the surface of the silicon wafer; then, carrying out high-temperature propulsion on the silicon wafer; then removing the BSG layer and the mask layer on the silicon wafer;
wherein:
the mask adhesive is the mask adhesive for SE doping;
depositing a mask adhesive by adopting a screen printing, ink-jet printing, transfer printing or spraying mode;
carrying out high-temperature propulsion on the silicon wafer in a tube furnace or a chain furnace;
and removing the BSG layer and the mask layer on the silicon wafer by adopting a cleaning solution containing HF.
The specific embodiment of the invention is as follows:
example 1
1) At room temperature, adding 20g of polymethyl silicone resin into 60g of ethyl acetate, and stirring until the polymethyl silicone resin is completely dissolved; then adding 15g of silicon powder, and stirring uniformly; then adding 2g of boron series low-melting-point glass powder, and stirring the mixture evenly; then adding 3g of fumed silica, and stirring the mixture until the mixture is uniform; after the mixture is processed by a three-roller grinder for three times, vacuum defoaming is carried out for 5 minutes to prepare mask glue;
2) Placing the silicon wafer after texturing into a tubular boron diffusion furnace for tubular deposition and slight propulsion to obtain a BSG layer and a shallow boron junction on the surface of the silicon wafer; then, screen printing a mask adhesive on the surface of the BSG layer to form a mask layer, so that the coverage area of the mask layer is consistent with the metal electrode printing area on the surface of the silicon wafer; then advancing the silicon wafer in a tubular diffusion furnace at the high temperature of 1050 ℃ for 60min; and then removing the BSG layer and the mask layer on the silicon wafer by adopting a cleaning solution containing HF, and completing the subsequent conventional preparation steps of the cell.
Through tests, the surface concentration of the boron lightly doped region in the embodiment 1 is 1.14E19atoms/cm 3 The junction depth is 0.31 μm, and the sheet resistance is 240 Ω/□; the surface concentration of the boron heavily doped region after high-temperature propulsion is 2.98E19atoms/cm 3 The junction depth is 0.41 μm, and the sheet resistance is 88 Ω/□.
Example 2
1) Adding 15g of polyaryl organic silicon resin into 65g of acetone at room temperature, and stirring until the polyaryl organic silicon resin is completely dissolved; then 16g of quartz micro powder is added and stirred to be uniform; then adding 1g of borosilicate glass powder, and stirring the mixture until the mixture is uniform; then adding 2g of diatomite and stirring the mixture evenly; after the mixture is processed by a three-roller grinder for three times, vacuum defoaming is carried out for 5 minutes to prepare mask glue;
2) Placing the textured silicon wafer in a tubular boron diffusion furnace for tubular deposition and slight propulsion to obtain a BSG layer and a shallow boron junction on the surface of the silicon wafer; then, screen printing a mask adhesive on the surface of the BSG layer to form a mask layer, so that the coverage area of the mask layer is consistent with the metal electrode printing area on the surface of the silicon wafer; then advancing the silicon wafer in a tubular diffusion furnace at the high temperature of 1050 ℃ for 60min; and then, removing the BSG layer and the mask layer on the silicon wafer by adopting a cleaning solution containing HF, and completing the subsequent conventional preparation steps of the cell.
The surface concentration of the boron lightly doped region of example 2 was tested to be 1.18E19atoms/cm 3 The junction depth is 0.63 μm, and the sheet resistance is 220 Ω/□; the surface concentration of the boron heavily doped region after high-temperature advance is 5.11e19atoms/cm 3 The junction depth is 1.30 μm, and the sheet resistance is 32 Ω/□.
Example 3
1) At room temperature, adding 17g of polyalkylaryl silicone resin into 55g of toluene, and stirring until the polyalkylaryl silicone resin is completely dissolved; then adding 20g of boron carbide, and stirring the mixture evenly; then adding 3g of lead-series low-melting-point glass powder, and stirring the mixture evenly; then adding 1g of bentonite, and stirring the mixture evenly; after the mixture is processed by a three-roller grinder for three times, vacuum defoaming is carried out for 5 minutes to prepare mask glue;
2) Placing the textured silicon wafer in a tubular boron diffusion furnace for tubular deposition and slight propulsion to obtain a BSG layer and a shallow boron junction on the surface of the silicon wafer; then, screen printing a mask adhesive on the surface of the BSG layer to form a mask layer, so that the coverage area of the mask layer is consistent with the metal electrode printing area on the surface of the silicon wafer; then advancing the silicon wafer in a tubular diffusion furnace at the high temperature of 1050 ℃ for 60min; and then, removing the BSG layer and the mask layer on the silicon wafer by adopting a cleaning solution containing HF, and completing the subsequent conventional preparation steps of the cell.
It was tested that the surface concentration of the boron lightly doped region of example 3 was 1.16E19atoms/cm 3 The junction depth is 0.60 mu m, and the sheet resistance is 210 omega/□; the surface concentration of the boron heavily doped region is 4.90E19atoms/cm after high-temperature propulsion 3 The junction depth is 1.32 μm, and the sheet resistance is 30 Ω/□.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the technical principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (1)
1. The preparation method of the boron-doped selective emitter is characterized by comprising the following steps of:
1) Adding 15g of polyaryl organic silicon resin into 65g of acetone at room temperature, and stirring until the polyaryl organic silicon resin is completely dissolved; completely dissolving polyaryl organic silicon resin into a transparent solution with certain viscosity by using acetone; then 16g of quartz micro powder is added and stirred to be uniform; then adding 1g of borosilicate glass powder, and stirring the mixture until the mixture is uniform; then adding 2g of diatomite and stirring the mixture evenly; after the mixture is ground by a three-roller grinder for three times, vacuum defoaming is carried out for 5 minutes to prepare a mask adhesive; the diatomite adjusts the mask adhesive to a proper viscosity so that the mask adhesive can be used for screen printing;
2) Placing the textured silicon wafer in a tubular boron diffusion furnace for tubular deposition and slight propulsion to obtain a BSG layer and a shallow boron junction on the surface of the silicon wafer; then, screen printing a mask adhesive on the surface of the BSG layer to form a mask layer, so that the coverage area of the mask layer is consistent with the metal electrode printing area on the surface of the silicon wafer; then advancing the silicon wafer at 1050 ℃ for 60min in a tubular diffusion furnace; the borosilicate glass powder in the mask adhesive bonds the uniformly mixed quartz micropowder to form a compact structure; the quartz micro powder in the mask glue inhibits the boron in the silicon wafer from diffusing into BSG; and then, removing the BSG layer and the mask layer on the silicon wafer by adopting a cleaning solution containing HF, and completing the subsequent conventional preparation steps of the cell.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210000180.8A CN114479658B (en) | 2022-01-01 | 2022-01-01 | Mask adhesive for SE doping and preparation method and application thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210000180.8A CN114479658B (en) | 2022-01-01 | 2022-01-01 | Mask adhesive for SE doping and preparation method and application thereof |
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| Publication Number | Publication Date |
|---|---|
| CN114479658A CN114479658A (en) | 2022-05-13 |
| CN114479658B true CN114479658B (en) | 2023-02-03 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103834188A (en) * | 2014-02-26 | 2014-06-04 | 吉林大学 | Photo-crosslinkable polymer-organosiloxane mixed glue flexible substrate and application thereof in preparing organic electronic device |
| CN108659469A (en) * | 2018-05-18 | 2018-10-16 | 北京市射线应用研究中心 | The epoxy resin-matrix neutron shielding material and preparation and application that organic siliconresin is modified |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111171779A (en) * | 2018-11-11 | 2020-05-19 | 天津大学青岛海洋技术研究院 | Preparation method of wide-temperature-range high-temperature-resistant composite adhesive |
| CN113363334A (en) * | 2021-06-01 | 2021-09-07 | 常州时创能源股份有限公司 | Preparation method of boron-doped selective emitter |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103834188A (en) * | 2014-02-26 | 2014-06-04 | 吉林大学 | Photo-crosslinkable polymer-organosiloxane mixed glue flexible substrate and application thereof in preparing organic electronic device |
| CN108659469A (en) * | 2018-05-18 | 2018-10-16 | 北京市射线应用研究中心 | The epoxy resin-matrix neutron shielding material and preparation and application that organic siliconresin is modified |
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