CN114388642A - Cadmium telluride solar cell and manufacturing method thereof - Google Patents

Cadmium telluride solar cell and manufacturing method thereof Download PDF

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CN114388642A
CN114388642A CN202011141081.9A CN202011141081A CN114388642A CN 114388642 A CN114388642 A CN 114388642A CN 202011141081 A CN202011141081 A CN 202011141081A CN 114388642 A CN114388642 A CN 114388642A
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cadmium telluride
solar cell
magnesium
doped
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彭寿
陈瑛
殷新建
周显华
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China Triumph International Engineering Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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Abstract

The invention provides a cadmium telluride solar cell and a manufacturing method thereof, wherein the method comprises the following steps: forming a light absorbing layer comprising a cadmium telluride layer; forming a back passivation layer on the surface of the light absorption layer, wherein the back passivation layer comprises a magnesium-doped cadmium telluride layer; forming a back contact layer on the surface of the back passivation layer; and forming a back electrode layer on the surface of the back contact layer. The magnesium-doped cadmium telluride back passivation layer is arranged between the light absorption layer and the back contact layer of the cadmium telluride solar cell, so that the recombination of current carriers at the interface of the back contact layer and the light absorption layer can be effectively inhibited, the concentration and the service life of the current carriers are improved, the open-circuit voltage is increased, the filling factor is improved, and the conversion efficiency of the solar cell is further improved. In addition, the back passivation layer is adopted, so that the potential barrier of the grain boundary interface of the back contact layer and the light absorption layer is further reduced, the diffusion of copper to the buffer layer is prevented, the initial performance and the long-term stability of the battery are excellent, and the conversion efficiency is high.

Description

Cadmium telluride solar cell and manufacturing method thereof
Technical Field
The invention belongs to the technical field of solar cells, and relates to a cadmium telluride solar cell and a manufacturing method thereof.
Background
Cadmium telluride (CdTe) has a forbidden band width of about 1.45eV, is an important thin film material, has a forbidden band width very close to the ideal forbidden band width of a photovoltaic material, and has a high light absorption coefficient. Researches show that the CdTe film with the thickness of several microns can absorb more than 90% of sunlight, the theoretical conversion efficiency of the CdTe film is as high as about 33%, and the CdTe film is a very potential photovoltaic material. Traditionally, CdTe thin film cells have been comprised of a conductive substrate, a cadmium sulfide (CdS) window layer, a CdTe absorber layer, and a back contact layer and metal back electrode layer. In order to improve the efficiency of the battery, researchers have conducted intensive studies on the microstructure of the battery.
Since the light absorption layer is mainly a cadmium telluride film layer, and the work function of the cadmium telluride film is relatively high, in the initial cadmium telluride solar cell structure, a back electrode layer is directly plated after the cadmium telluride film layer is designed by many researchers, organizations or factories, but the efficiency of the cell manufactured by the method is relatively low because the barrier between the light absorption layer and the back electrode is relatively high, and later, along with the research, the current mainstream structure is that a back contact layer is added between the light absorption layer and the back electrode, the material is generally copper chloride or copper-doped zinc telluride and other materials, so that the interface barrier is really reduced, but the carrier concentration of the interface is limited to a certain extent, generally 1013～1015cm-3The reason is that certain recombination exists between the light absorption layer and the back contact layer, which is determined by material characteristics, so that the filling factor is limited to about 80 percent at most, and the back contact layer is in direct contact with the light absorption layer, so that copper in the back contact layer is continuously diffused, which has great influence on the performance of the cadmium telluride battery, and the chip of cadmium telluride may have attenuation condition in the later period, which affects the output power for long-term use.
Disclosure of Invention
In view of the above disadvantages of the prior art, an object of the present invention is to provide a cadmium telluride solar cell and a manufacturing method thereof, which are used to solve the problems of low conversion efficiency and poor long-term stability of the solar cell in the prior art.
To achieve the above and other related objects, the present invention provides a method for manufacturing a cadmium telluride solar cell, comprising the steps of:
forming a light absorbing layer comprising a cadmium telluride layer;
forming a back passivation layer on the surface of the light absorption layer, wherein the back passivation layer comprises a magnesium-doped cadmium telluride layer;
forming a back contact layer on the surface of the back passivation layer;
and forming a back electrode layer on the surface of the back contact layer.
Optionally, the doping concentration of magnesium in the magnesium-doped cadmium telluride layer ranges from 3 wt.% to 15 wt.%.
Optionally, the doping concentration of magnesium in the magnesium-doped cadmium telluride layer ranges from 5 wt.% to 10 wt.%.
Alternatively, the method of forming the back passivation layer includes an evaporation method, and the method of forming the light absorbing layer includes a close space sublimation method.
Optionally, the thickness of the back passivation layer is in a range of 30nm to 50 nm.
Optionally, the material of the back contact layer includes at least one of copper-doped zinc telluride, zinc phosphide, copper telluride, nickel oxide, and arsenic telluride, and the material of the back electrode layer includes at least one of molybdenum, nickel, gold, and silver.
Optionally, the method further comprises a step of forming a front electrode layer and a buffer layer, wherein the buffer layer is located between the light absorbing layer and the front electrode layer.
Optionally, the front electrode layer is made of at least one of fluorine-doped tin dioxide, indium-doped tin dioxide, magnesium-doped zinc oxide and aluminum-doped zinc oxide, and the buffer layer is made of at least one of cadmium sulfide and cadmium selenide.
The invention also provides a cadmium telluride solar cell which comprises a back electrode layer, a back contact layer, a back passivation layer and a light absorption layer which are sequentially arranged from bottom to top, wherein the light absorption layer comprises a cadmium telluride layer, and the back passivation layer comprises a magnesium-doped cadmium telluride layer.
Optionally, the doping concentration of magnesium in the magnesium-doped cadmium telluride layer ranges from 3 wt.% to 15 wt.%.
Optionally, the doping concentration of magnesium in the magnesium-doped cadmium telluride layer ranges from 5 wt.% to 10 wt.%.
Optionally, the thickness of the back passivation layer is in a range of 30nm to 50 nm.
Optionally, the material of the back contact layer includes at least one of copper-doped zinc telluride, zinc phosphide, copper telluride, nickel oxide, and arsenic telluride, and the material of the back electrode layer includes at least one of molybdenum, nickel, gold, and silver.
Optionally, the cadmium telluride solar cell further comprises a front electrode layer and a buffer layer, wherein the buffer layer is located between the light absorbing layer and the front electrode layer.
Optionally, the front electrode layer is made of at least one of fluorine-doped tin dioxide, indium-doped tin dioxide, magnesium-doped zinc oxide and aluminum-doped zinc oxide, and the buffer layer is made of at least one of cadmium sulfide and cadmium selenide.
As described above, in the cadmium telluride solar cell and the method for manufacturing the same according to the present invention, the magnesium-doped cadmium telluride (CMT) back passivation layer is disposed between the light absorption layer and the back contact layer, so that recombination of carriers at the interface of the back contact layer and the light absorption layer can be effectively suppressed, thereby improving carrier concentration and lifetime, and increasing the magnitude of the open circuit voltage (Voc) to 10-12 by increasing the hole density and lifetime, thereby further improving the value of the Fill Factor (FF) (up to 85% or more) and further improving the conversion efficiency of the solar cell (up to 25%). In addition, the back passivation layer is adopted, so that the potential barrier of the grain boundary interface of the back contact layer and the light absorption layer is further reduced, the diffusion of copper to the buffer layer is prevented, the initial performance and the long-term stability of the battery are excellent, and the conversion efficiency is high.
Drawings
FIG. 1 shows a process flow diagram of a method of manufacturing a cadmium telluride solar cell of the present invention.
FIG. 2 is a schematic diagram of a light absorbing layer formed by the cadmium telluride solar cell manufacturing method of the present invention.
Fig. 3 is a schematic diagram illustrating a back passivation layer formed on the surface of the light absorbing layer according to the cadmium telluride solar cell manufacturing method of the present invention.
FIG. 4 is a schematic view showing the formation of a back contact layer on the surface of the back passivation layer in the cadmium telluride solar cell manufacturing method of the present invention.
FIG. 5 is a schematic diagram showing the formation of a back electrode layer on the surface of the back contact layer in the cadmium telluride solar cell manufacturing method of the present invention.
FIG. 6 is a schematic view of a stacked structure of a cadmium telluride solar cell manufacturing method of the present invention.
Description of the element reference numerals
S1-S4
1 front electrode layer
2 buffer layer
3 light absorbing layer
4 back passivation layer
5 Back contact layer
6 Back electrode layer
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 1 to 6. It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the components related to the present invention are only shown in the drawings rather than drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of the components in actual implementation may be changed freely, and the layout of the components may be more complicated.
Example one
In this embodiment, a method for manufacturing a cadmium telluride solar cell is provided, please refer to fig. 1, which shows a process flow of the method, including the following steps:
s1: forming a light absorption layer;
s2: forming a back passivation layer on the surface of the light absorption layer;
s3: forming a back contact layer on the surface of the back passivation layer;
s4: and forming a back electrode layer on the surface of the back contact layer.
Referring to fig. 2, step S1 is executed: the light absorbing layer 3 is formed.
As an example, the light absorbing layer 3 is formed using a close space sublimation method (CSS) or other suitable method, the light absorbing layer 3 comprising a cadmium telluride layer having a thickness in the range of 0.2 μm to 10 μm, for example 2.5 μm.
As an example, before the light absorbing layer 3 is formed, a step of forming a front electrode layer 1 and a buffer layer 2 is further included, and the buffer layer 2 is located between the light absorbing layer 3 and the front electrode layer 1.
By way of example, the material of the front electrode layer 1 includes, but is not limited to, at least one of fluorine-doped tin dioxide (FTO), indium-doped tin dioxide, magnesium-doped zinc oxide, and aluminum-doped zinc oxide, the thickness of the front electrode layer 1 is in the range of 300nm to 400nm, and the sheet resistance is in the range of 12 Ω/g to 15 Ω/g. The buffer layer 2 is formed by a method including, but not limited to, a close space sublimation method, the material of the buffer layer 2 includes, but is not limited to, at least one of cadmium sulfide and cadmium selenide, and the thickness of the buffer layer 2 is in a range of 50nm-100 nm.
Referring to fig. 3, step S2 is executed: a back passivation layer 4 is formed on the surface of the light absorbing layer 3.
Illustratively, the back passivation layer 4 is formed using an evaporation process or other suitable process, the back passivation layer 4 including a magnesium-doped cadmium telluride (CMT) layer, the back passivation layer having a thickness in the range of 30nm to 50 nm.
As an example, the doping concentration of magnesium in the magnesium-doped cadmium telluride layer is in a range of 3 wt.% to 15 wt.%, or 5 wt.% to 10 wt.%, and in this embodiment, the magnesium-doped cadmium telluride layer preferably includes 92.36 wt.% CdTe and 7.64 wt.% Mg.
By adopting the magnesium-doped cadmium telluride back passivation layer, the recombination of carriers at the interface of the light absorption layer 3 and a back contact layer formed subsequently can be effectively inhibited.
Referring to fig. 4, step S3 is executed: and forming a back contact layer 5 on the surface of the back passivation layer 4.
As an example, the material of the back contact layer includes, but is not limited to, copper-doped zinc telluride (CZT), zinc phosphide (Zn)3P2) Copper telluride (CuTe), nickel oxide (NiO), arsenic telluride (As)2Te3) At least one of (1).
Referring to fig. 5, step S4 is executed: and forming a back electrode layer 6 on the surface of the back contact layer 5.
By way of example, magnetron sputtering or other suitable methods are used to form the back electrode layer 6, the material of the back electrode layer 6 includes but is not limited to at least one of molybdenum, nickel, gold and silver, and the thickness of the back electrode layer 6 is in the range of 200 nm and 250 nm.
In the manufacturing method of the cadmium telluride solar cell of the embodiment, after the light absorption layer is coated, the magnesium-doped cadmium telluride (CMT) back passivation layer is plated, so that the recombination of current carriers at the interface of the back contact layer and the light absorption layer can be effectively inhibited, the concentration of the current carriers and the service life are improved, the magnitude of open-circuit voltage (Voc) is increased to 10-12 by increasing the hole density and the service life, the value of a Fill Factor (FF) can be further improved (up to 85% or more), and the conversion efficiency of the solar cell can be further improved (up to 25%). In addition, the back passivation layer is adopted, so that the potential barrier of the grain boundary interface of the back contact layer and the light absorption layer is further reduced, the diffusion of copper to the buffer layer is prevented, the initial performance and the long-term stability of the battery are excellent, and the conversion efficiency is high.
Example two
In this embodiment, a cadmium telluride solar cell is provided, please refer to fig. 6, which shows a schematic view of a stacked structure of the cadmium telluride solar cell, where the cadmium telluride solar cell includes a back electrode layer 6, a back contact layer 5, a back passivation layer 4, and a light absorbing layer 3, which are sequentially disposed from bottom to top, the light absorbing layer 3 includes a cadmium telluride layer, and the back passivation layer 4 includes a magnesium-doped cadmium telluride layer.
Specifically, by adopting the magnesium-doped cadmium telluride back passivation layer, the recombination of carriers at the interface of the light absorption layer 3 and the back contact layer 5 can be effectively inhibited.
As an example, the doping concentration of magnesium in the magnesium-doped cadmium telluride layer is in a range of 3 wt.% to 15 wt.%, or 5 wt.% to 10 wt.%, and in this embodiment, the magnesium-doped cadmium telluride layer preferably includes 92.36 wt.% CdTe and 7.64 wt.% Mg.
As an example, the light absorbing layer 3 comprises a cadmium telluride layer having a thickness in the range of 0.2 μm to 10 μm, for example 2.5 μm. The back passivation layer 4 comprises a magnesium-doped cadmium telluride (CMT) layer having a thickness in the range of 30nm to 50 nm. The material of the back contact layer 5 includes, but is not limited to, copper-doped zinc telluride, zinc phosphide (Zn)3P2) Copper telluride (CuTe), nickel oxide (NiO), arsenic telluride (As)2Te3) At least one of (1). The material of the back electrode layer 6 includes but is not limited to at least one of molybdenum, nickel, gold and silver, and the thickness of the back electrode layer 6 is in the range of 200-250 nm.
As an example, the cadmium telluride solar cell further includes a front electrode layer 1 and a buffer layer 2, and the buffer layer 2 is located between the light absorbing layer 3 and the front electrode layer 1.
By way of example, the material of the front electrode layer 1 includes, but is not limited to, at least one of fluorine-doped tin dioxide (FTO), indium-doped tin dioxide, magnesium-doped zinc oxide, and aluminum-doped zinc oxide, the thickness of the front electrode layer 1 is in the range of 300nm to 400nm, and the sheet resistance is in the range of 12 Ω/g to 15 Ω/g. The material of the buffer layer 2 includes but is not limited to at least one of cadmium sulfide and cadmium selenide, and the thickness of the buffer layer 2 is 50nm-100 nm.
In summary, in the cadmium telluride solar cell and the manufacturing method thereof, the magnesium-doped cadmium telluride (CMT) back passivation layer is arranged between the light absorption layer and the back contact layer, so that the recombination of carriers at the interface of the back contact layer and the light absorption layer can be effectively inhibited, the carrier concentration and the service life are improved, the magnitude of the open-circuit voltage (Voc) is increased to 10-12 by increasing the hole density and the service life, the value of the Fill Factor (FF) can be further improved (up to 85% or more), and the conversion efficiency of the solar cell can be further improved (up to 25%). In addition, the back passivation layer is adopted, so that the potential barrier of the grain boundary interface of the back contact layer and the light absorption layer is further reduced, the diffusion of copper to the buffer layer is prevented, the initial performance and the long-term stability of the battery are excellent, and the conversion efficiency is high. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.

Claims (15)

1. A manufacturing method of a cadmium telluride solar cell is characterized by comprising the following steps:
forming a light absorbing layer comprising a cadmium telluride layer;
forming a back passivation layer on the surface of the light absorption layer, wherein the back passivation layer comprises a magnesium-doped cadmium telluride layer;
forming a back contact layer on the surface of the back passivation layer;
and forming a back electrode layer on the surface of the back contact layer.
2. A method of manufacturing a cadmium telluride solar cell as set forth in claim 1 wherein: the doping concentration of magnesium in the magnesium-doped cadmium telluride layer ranges from 3 wt.% to 15 wt.%.
3. A method of manufacturing a cadmium telluride solar cell as set forth in claim 1 wherein: the doping concentration of magnesium in the magnesium-doped cadmium telluride layer ranges from 5 wt.% to 10 wt.%.
4. A method of manufacturing a cadmium telluride solar cell as set forth in claim 1 wherein: the method of forming the back passivation layer includes an evaporation method, and the method of forming the light absorbing layer includes a close space sublimation method.
5. A method of manufacturing a cadmium telluride solar cell as set forth in claim 1 wherein: the thickness range of the back passivation layer is 30nm-50 nm.
6. A method of manufacturing a cadmium telluride solar cell as set forth in claim 1 wherein: the back contact layer is made of at least one of copper-doped zinc telluride, zinc phosphide, copper telluride, nickel oxide and arsenic telluride, and the back electrode layer is made of at least one of molybdenum, nickel, gold and silver.
7. A method of manufacturing a cadmium telluride solar cell as set forth in claim 1 wherein: the method further comprises the step of forming a front electrode layer and a buffer layer, wherein the buffer layer is positioned between the light absorption layer and the front electrode layer.
8. A method of manufacturing a cadmium telluride solar cell as set forth in claim 7 wherein: the front electrode layer is made of at least one of fluorine-doped tin dioxide, indium-doped tin dioxide, magnesium-doped zinc oxide and aluminum-doped zinc oxide, and the buffer layer is made of at least one of cadmium sulfide and cadmium selenide.
9. A cadmium telluride solar cell, characterized by: the cadmium telluride solar cell comprises a back electrode layer, a back contact layer, a back passivation layer and a light absorption layer which are sequentially arranged from bottom to top, wherein the light absorption layer comprises a cadmium telluride layer, and the back passivation layer comprises a magnesium-doped cadmium telluride layer.
10. A cadmium telluride solar cell as set forth in claim 9 wherein: the doping concentration of magnesium in the magnesium-doped cadmium telluride layer ranges from 3 wt.% to 15 wt.%.
11. A cadmium telluride solar cell as set forth in claim 9 wherein: the doping concentration of magnesium in the magnesium-doped cadmium telluride layer ranges from 5 wt.% to 10 wt.%.
12. A cadmium telluride solar cell as set forth in claim 9 wherein: the thickness range of the back passivation layer is 30nm-50 nm.
13. A cadmium telluride solar cell as set forth in claim 9 wherein: the back contact layer is made of at least one of copper-doped zinc telluride, zinc phosphide, copper telluride, nickel oxide and arsenic telluride, and the back electrode layer is made of at least one of molybdenum, nickel, gold and silver.
14. A cadmium telluride solar cell as set forth in claim 9 wherein: the cadmium telluride solar cell further comprises a front electrode layer and a buffer layer, wherein the buffer layer is located between the light absorption layer and the front electrode layer.
15. A cadmium telluride solar cell as set forth in claim 14 wherein: the front electrode layer is made of at least one of fluorine-doped tin dioxide, indium-doped tin dioxide, magnesium-doped zinc oxide and aluminum-doped zinc oxide, and the buffer layer is made of at least one of cadmium sulfide and cadmium selenide.
CN202011141081.9A 2020-10-22 2020-10-22 Cadmium telluride solar cell and manufacturing method thereof Pending CN114388642A (en)

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103855232A (en) * 2012-12-07 2014-06-11 通用电气公司 Photovoltaic device and manufacturing method thereof
CN104638038A (en) * 2013-11-06 2015-05-20 恒基伟业知识产权管理顾问（北京）有限公司 CdTe thin film solar cell electron reflection layer and preparation method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103855232A (en) * 2012-12-07 2014-06-11 通用电气公司 Photovoltaic device and manufacturing method thereof
US20160190368A1 (en) * 2012-12-07 2016-06-30 First Solar Malaysia Sdn. Bhd. Photovoltaic Device and Method of Making
CN104638038A (en) * 2013-11-06 2015-05-20 恒基伟业知识产权管理顾问（北京）有限公司 CdTe thin film solar cell electron reflection layer and preparation method

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