CN114388173A - Superconducting narrow-frame conducting device and directional ultrasonic transparent screen - Google Patents
Superconducting narrow-frame conducting device and directional ultrasonic transparent screen Download PDFInfo
- Publication number
- CN114388173A CN114388173A CN202111062251.9A CN202111062251A CN114388173A CN 114388173 A CN114388173 A CN 114388173A CN 202111062251 A CN202111062251 A CN 202111062251A CN 114388173 A CN114388173 A CN 114388173A
- Authority
- CN
- China
- Prior art keywords
- conducting
- layer
- conducting layer
- conductive layer
- frame
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002834 transmittance Methods 0.000 claims abstract description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 49
- 229910052802 copper Inorganic materials 0.000 claims description 44
- 239000010949 copper Substances 0.000 claims description 44
- 239000000758 substrate Substances 0.000 claims description 37
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 19
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical group [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 19
- 238000004544 sputter deposition Methods 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 238000005507 spraying Methods 0.000 claims description 11
- MPTQRFCYZCXJFQ-UHFFFAOYSA-L copper(II) chloride dihydrate Chemical group O.O.[Cl-].[Cl-].[Cu+2] MPTQRFCYZCXJFQ-UHFFFAOYSA-L 0.000 claims description 10
- 238000007747 plating Methods 0.000 claims description 7
- 239000002042 Silver nanowire Substances 0.000 claims description 2
- 238000002604 ultrasonography Methods 0.000 claims 1
- 238000013329 compounding Methods 0.000 abstract description 5
- 230000003287 optical effect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/043—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means using propagating acoustic waves
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Acoustics & Sound (AREA)
- Human Computer Interaction (AREA)
- General Physics & Mathematics (AREA)
- Non-Insulated Conductors (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Abstract
The invention discloses a superconducting narrow-frame conducting device and a directional ultrasonic transparent screen, wherein the superconducting narrow-frame conducting device comprises a conducting base body and a plurality of conducting layers, the conducting layers are sequentially stacked up and down and are arranged on the conducting base body, one conducting layer of the conducting layers comprises an in-plane conducting layer and a frame conducting layer, the width of the frame conducting layer is less than 1.5mm, the thickness of the frame conducting layer is less than 1 mu m, the thickness of the in-plane conducting layer is less than or equal to that of the frame conducting layer, the total light transmittance of the conducting layers is more than 80%, and the minimum square resistance is 1-500 milliohms. The conductive layer formed by compounding the conductive layer has the total light transmittance of more than 80 percent, the minimum sheet resistance can be 1-500 milliohms, the width of the frame wire is less than 1.5mm, the ultra-narrow frame is realized, the thickness of the frame wire is less than 1 mu m, and the formed conductive layer has excellent flatness.
Description
Technical Field
The invention relates to the technical field of directional sound production, in particular to a superconducting narrow-frame conducting device and a directional ultrasonic transparent screen.
Background
With the continuous development of the display market, the visual effect of the display screen is more and more strictly required by consumers, so that the requirements on the appearance design of the display screen are diversified, and the requirements on the screen occupation ratio are higher and higher. The trend of the full-screen technology is to pursue a screen occupation ratio of 90% or more by designing an ultra-narrow frame or even a frame-free frame.
For the directional ultrasonic transparent screen, in order to meet the experience of customers, the requirement of an ultra-narrow frame gradually becomes a very requirement, and the lower the square resistance of the sound production layer and the substrate layer of the directional ultrasonic transparent screen is, the better the overall performance of the screen is. The optical transparent conductive film currently in the market comprises an indium tin oxide conductive layer or a nano silver conductive layer, wherein when the sheet resistance of the indium tin oxide conductive layer is lower than 40 Ω, the total light transmittance of the indium tin oxide conductive layer is substantially lower than 78%, and the haze of the indium tin oxide conductive layer is higher than 2%. When the sheet resistance of the nano-silver conductive layer is 10 omega, the total light transmittance of the nano-silver conductive layer is about 78 percent, the ductility of the nano-silver conductive layer is higher than that of indium tin oxide, but a waterproof and air-proof isolation layer needs to be made on the surface of the finished nano-silver conductive layer. For the directional ultrasonic transparent screen with high degree of curvature, a nano silver conductive layer with high ductility is preferably used as the conductive layer of the sound production layer and the substrate layer. Whether the curved surface directional ultrasonic screen is a non-curved surface or not, the lower the sheet resistance of the conducting layer is, the higher the sound pressure is.
However, the performance of the optically transparent conductive film needs to be further improved to realize a narrower frame and a better performance of the directional ultrasonic transparent screen. Therefore, how to provide a directional ultrasonic transparent screen with good overall performance and an ultra-narrow frame is a problem to be solved at present.
The invention content is as follows:
the invention aims to provide a superconducting narrow-frame conducting device and a directional ultrasonic transparent screen.
In order to achieve the above object, in one aspect, the present invention provides a superconducting narrow bezel conductive device, including:
a conductive base body, a conductive layer and a conductive layer,
the multilayer conductive layer is stacked up and down in sequence and arranged on the conductive substrate, one conductive layer of the multilayer conductive layer comprises an in-plane conductive layer and a frame conductive layer, the width of the frame conductive layer is less than 1.5mm, the thickness of the frame conductive layer is less than 1 mu m, the thickness of the in-plane conductive layer is less than or equal to the thickness of the frame conductive layer, the total light transmittance of the multilayer conductive layer is more than 80%, and the minimum square resistance is 1-500 milliohms.
In a preferred embodiment, the multi-layer conductive layer includes a first conductive layer and at least one second conductive layer, the first conductive layer is disposed on the conductive substrate, and the second conductive layer is disposed on the first conductive layer, the first conductive layer includes the in-plane conductive layer and the frame conductive layer, the first conductive layer is a copper trace, and the second conductive layer is an indium tin oxide conductive layer or a silver nanowire conductive layer.
In a preferred embodiment, the multi-layer conductive layer includes a first conductive layer and at least one second conductive layer, the first conductive layer is disposed on the conductive substrate, and the second conductive layer is disposed on the first conductive layer, the second conductive layer includes the in-plane conductive layer and the frame conductive layer, the first conductive layer is an ito conductive layer or a nanosilver conductive layer, and the second conductive layer is a copper trace.
In a preferred embodiment, the multi-layer conductive layer includes a first conductive layer and at least one second conductive layer, the first conductive layer is disposed on the conductive substrate, and the second conductive layer is disposed on the first conductive layer, the first conductive layer includes the in-plane conductive layer and the frame conductive layer, the first conductive layer is a metal grid, and the second conductive layer is an indium tin oxide conductive layer, or a nano silver wire conductive layer plus a copper routing conductive layer, or an indium tin oxide conductive layer plus a copper routing conductive layer.
In a preferred embodiment, the in-plane conductive layer includes a plurality of traces, a width of each trace is greater than 20 μm, and a distance between two adjacent traces is greater than 20 μm.
In a preferred embodiment, the in-plane conductive layer and the frame conductive layer are implemented by one operation or by a multi-operation.
In a preferred embodiment, when the in-plane conductive layer and the bezel conductive layer are implemented by one-time operation, the operation step includes: and plating copper on the whole surface of the conductive substrate or the first conductive layer to form a first copper layer, and then exposing and developing the first copper layer to form a frame conductive layer and an in-plane copper wiring.
In a preferred embodiment, when the in-plane conductive layer and the bezel conductive layer are implemented by a batch operation, the operation step includes: the frame conducting layer is formed on the conducting substrate or the first conducting layer in a spraying or sputtering mode; and the in-plane conducting layer is subjected to whole-surface copper plating on the conducting substrate or the area of the first conducting layer except the frame conducting layer to form a second copper layer, and then the second copper layer is subjected to exposure and development to form the in-plane copper wiring.
In a preferred embodiment, the other conductive layers of the multiple conductive layers are formed by spraying or sputtering.
On the other hand, the invention provides a directional ultrasonic transparent screen which comprises the superconducting narrow frame conducting device.
Compared with the prior art, the invention has the following beneficial effects:
1. the optical transparent conducting layer is formed by compounding a plurality of conducting layers, the conducting performance of the conducting layer is improved, the total light transmittance of the conducting layer formed by compounding is more than 80%, the lowest sheet resistance can be 1-500 milliohm, the width of the frame routing is less than 1.5mm, an ultra-narrow frame is realized, the thickness of the frame routing is less than 1 mu m, and the formed conducting layer is excellent in flatness.
2. The invention adopts the latticed copper wires or the metal grids to replace the existing indium tin oxide conducting layer or the nanometer silver layer, thereby greatly reducing the sheet resistance while ensuring the total light transmittance of the conducting layer, and greatly improving the sound pressure performance of the manufactured directional ultrasonic transparent screen compared with the existing optical transparent conducting layer.
Description of the drawings:
FIG. 1 is a schematic structural diagram of a conductive device according to the present invention;
FIG. 2 is a schematic structural diagram of a conductive substrate according to the present invention;
FIG. 3 is a schematic top view of a conductive structure according to the present invention;
FIG. 4 is a schematic structural diagram of a conductive substrate with a position limiting structure according to the present invention;
FIG. 5 is a schematic structural view of a conductive device in embodiment 1 of the present invention;
FIG. 6 is a schematic structural view of a conductive device in embodiment 2 of the present invention;
fig. 7 is a schematic structural diagram of a conductive device in embodiment 3 of the present invention.
The reference signs are:
1. the conductive substrate comprises a conductive substrate body 11, an in-plane visible area 12, a frame area 2, a conductive layer 21, an in-plane conductive layer 211, a wiring 22, a frame conductive layer 3, a limiting structure 31, a first limiting portion 32 and a second limiting portion.
The specific implementation mode is as follows:
the following detailed description of specific embodiments of the invention is provided, but it should be understood that the scope of the invention is not limited to the specific embodiments.
Throughout the specification and claims, unless explicitly stated otherwise, the word "comprise", or variations such as "comprises" or "comprising", will be understood to imply the inclusion of a stated element or component but not the exclusion of any other element or component.
As shown in FIG. 1, the superconducting narrow-bezel conducting device disclosed by the invention comprises a conducting base body 1 and a plurality of conducting layers 2 formed on the conducting base body 1. In practice, the conductive substrate 1 may be a substrate layer, such as glass, or a sound layer, such as a PET substrate. As shown in fig. 2, the conductive base 1 specifically includes an in-plane visible region 11 and a frame region 12 located at the periphery of the in-plane visible region 11. In practice, the width of the frame region 12 is generally 3mm or less.
The multiple conductive layers 2 are disposed on the conductive substrate 1, and are stacked up and down in sequence on the conductive substrate 1. One of the conductive layers 2 includes an in-plane conductive layer 21 located in the in-plane visible area 11 and a frame conductive layer 22 located in the frame area 12, where the in-plane conductive layer 21 is used for loading current, and the frame conductive layer 22 is used for frame routing. Specifically, the multi-layer conductive layer 2 includes a first conductive layer and at least one second conductive layer, wherein the first conductive layer is disposed on the conductive substrate, and the second conductive layer is disposed on the first conductive layer.
Preferably, the in-plane conductive layer 21 includes a plurality of traces 211 with a certain width and spacing, and the plurality of traces 211 are generally arranged in a grid. In order to ensure the in-plane visible effect, the width of the trace 211 of the in-plane conductive layer 21 may be 20 μm or more, and the pitch between two adjacent traces 211 is preferably greater than 200 μm, and may also be 20 μm, 40 μm, and the like in other embodiments. The frame conductive layer 22 is located at the periphery of the in-plane conductive layer 21, and preferably, in order to ensure that the frame wiring can normally work at a large current and increase heat dissipation, the frame conductive layer 22 is designed to be integrated, i.e., not divided into thinner lines. Preferably, the frame conductive layer 22 has a width of 1.5mm or less and a thickness of 1 μm or less. In addition, in order to ensure that the frame trace can normally operate at a large current, the thickness of the in-plane conductive layer 21 may be different from the thickness of the frame conductive layer 22, preferably, the thickness of the in-plane conductive layer 21 is less than or equal to the thickness of the frame conductive layer 22, for example, the thickness of the in-plane conductive layer 21 is in a nanometer (nm) level, such as 10nm, the frame conductive layer 22 is generally greater than 10nm, the frame conductive layer 22 may calculate the thickness and the width according to a loaded current value, and the in-plane conductive layer 21 may also calculate the thickness and the width according to a loaded current value.
The one of the conductive layers (e.g., the first conductive layer or the second conductive layer) including the in-plane conductive layer 21 and the bezel conductive layer 22 is preferably a copper trace or a metal grid. The in-plane conductive layer 21 and the frame conductive layer 22 may be implemented by one operation or by a plurality of operations. Specifically, for example, when the copper wire is used, the in-plane conductive layer 21 and the frame conductive layer 22 may be formed by first forming a first copper layer on the conductive substrate 1 or the first conductive layer by sputtering or spraying, and then forming the in-plane conductive layer 21 and the frame conductive layer 22 at one time by exposing and developing the first copper layer. In other embodiments, the in-plane conductive layer 21 and the frame conductive layer 22 may also be implemented by a batch operation, specifically, the frame conductive layer 22 is formed on the conductive substrate 1 or the first conductive layer by spraying or sputtering; the in-plane conductive layer 21 is formed by first performing copper plating on the entire surface of the conductive base 1 or the first conductive layer except for the frame conductive layer 22 to form a second copper layer, and then performing exposure and development on the second copper layer to form an in-plane copper trace.
The frame conductive layer 22 is preferably shaped by the limiting structure 3. Specifically, as shown in fig. 4, the limiting structure 3 includes a first limiting portion 31 and a second limiting portion 32, a frame conductive area is defined between the first limiting portion 31 and the second limiting portion 32, and the frame conductive layer 22 is formed in the frame conductive area.
Other conductive layers of the multi-layer conductive layer 2 may adopt one or more of indium tin oxide, nano silver wires and copper wires. The coating can be formed by spraying or sputtering.
Through the matching of the conductive layer materials and parameters such as the line width, the space, the thickness and the width of the frame conductive layer and the like of the in-plane conductive layer, the total light transmittance of the finally formed multilayer conductive layer is over 80 percent, and the minimum square resistance is 1-500 milliohms.
The structure of a superconducting narrow bezel of the present invention is described in several embodiments below.
Example 1
As shown in fig. 5, the conductive device with a superconducting narrow bezel according to embodiment 1 of the present invention includes a conductive substrate 1, a first conductive layer and a second conductive layer, wherein the first conductive layer is disposed on the conductive substrate 1, and the second conductive layer is disposed on the first conductive layer. The first conductive layer is a copper trace, and as shown in fig. 3, the first conductive layer includes an in-plane conductive layer 21 and a frame conductive layer 22, and the in-plane conductive layer 21 and the frame conductive layer 22 are preferably implemented by one-time operation. Specifically, a copper layer is first formed on the conductive substrate 1 by sputtering the whole surface, and then the in-plane conductive layer 21 and the frame conductive layer 22 are formed by exposure and development, in which the thickness of the in-plane conductive layer 21 is the same as that of the frame conductive layer 22. In this embodiment 1, in order to ensure the visible effect, the width of the copper wire of the in-plane conductive layer 21 is more than 20 μm, the distance between two adjacent copper wires is greater than 200 μm, the thickness of the in-plane conductive layer 21 can reach a nanometer level, and the thickness and the width of the copper wire can be specifically calculated according to the loaded current value. In order to ensure the normal operation of large current and increase heat dissipation, the copper traces of the frame conductive layer 22 are designed as an integral structure without being divided into thinner lines. If the width of the frame conductive layer 22 is 1.5mm or less and the thickness is 1 μm or less.
In addition, in order to ensure that the frame routing can work normally at a large current, the copper thickness of the frame conducting layer 22 and the thickness of the in-plane conducting layer 21 of the in-plane visible area 11 can be designed differently: if the thickness of the in-plane conductive layer 21 of the in-plane visible area 11 is in the nanometer (nm) level, the frame trace calculates the thickness and width of the frame conductive layer 22 according to the loaded current value, and the thickness can reach several micrometers level. At this time, the in-plane conductive layer 21 and the frame conductive layer 22 are implemented by a multi-step operation, specifically, the frame conductive layer 22 is formed in the frame region 12 of the conductive substrate 1 by a spraying or sputtering method; the in-plane conductive layer 21 is formed by first performing whole-plane copper plating on the in-plane visible area 11 of the conductive base 1 to form a second copper layer, and then performing exposure and development on the second copper layer to form an in-plane copper trace.
When the second conductive layer is implemented, indium tin oxide or nano silver wire can be used, and the second conductive layer can be formed on the first conductive layer by spraying or sputtering.
The total light transmittance of the finally formed multilayer conductive layer in embodiment 1 of the present invention is more than 80%, and the sheet resistance in the frame region can be as low as milliohm, for example, as low as 1 milliohm to 500 milliohm.
Example 2
As shown in fig. 6, the conductive device with a superconducting narrow bezel according to embodiment 2 of the present invention includes a conductive substrate 1, a first conductive layer and a second conductive layer, wherein the first conductive layer is disposed on the conductive substrate, and the second conductive layer is disposed on the first conductive layer. When the first conductive layer is implemented, indium tin oxide or nano silver wire can be used, and the first conductive layer can be formed on the conductive substrate 1 by spraying or sputtering. The second conductive layer is a copper trace, which includes an in-plane conductive layer 21 and a frame conductive layer 22, and the in-plane conductive layer 21 and the frame conductive layer 22 are preferably implemented in one operation. Specifically, a copper layer is first formed on the first conductive layer by sputtering the entire surface, and then the in-plane conductive layer 21 and the frame conductive layer 22 are formed by exposure and development, in which the thickness of the in-plane conductive layer 21 is the same as that of the frame conductive layer 22. In this embodiment 2, in order to ensure the visible effect, the width of the copper wire of the in-plane conductive layer 21 is more than 20 μm, the distance between two adjacent copper wires is greater than 200 μm, the thickness of the in-plane conductive layer 21 can reach a nanometer level, and the thickness and the width of the copper wire can be specifically calculated according to the loaded current value. In order to ensure the normal operation of large current and increase heat dissipation, the copper traces of the frame conductive layer 22 are designed as an integral structure without being divided into thinner lines. If the width of the frame conductive layer 22 is 1.5mm or less and the thickness is 1 μm or less.
In addition, in order to ensure that the frame routing can work normally at a large current, the copper thickness of the frame conducting layer 22 and the thickness of the in-plane conducting layer 21 of the in-plane visible area can be designed differently: if the thickness of the in-plane conductive layer 21 of the in-plane visible area 11 is in the nanometer (nm) level, the frame trace calculates the thickness and width of the frame conductive layer 22 according to the loaded current value, and the thickness can reach several micrometers level. At this time, the in-plane conductive layer 21 and the frame conductive layer 22 are implemented by a fractional operation, specifically, the frame conductive layer 22 is formed in the frame region 12 of the first conductive layer by spraying or sputtering; the in-plane conductive layer 21 is formed by first performing whole-plane copper plating on the in-plane visible region of the first conductive layer to form a second copper layer, and then performing exposure and development on the second copper layer to form an in-plane copper trace.
The total light transmittance of the finally formed multilayer conductive layer in embodiment 2 of the present invention is more than 80%, and the sheet resistance in the frame region can be as low as milliohm, for example, as low as 1 milliohm to 500 milliohm.
Example 3
As shown in fig. 7, the conductive device with a superconducting narrow bezel according to embodiment 3 of the present invention includes a conductive substrate 1, a first conductive layer and a second conductive layer, wherein the first conductive layer is disposed on the conductive substrate 1, and the second conductive layer is disposed on the first conductive layer. The first conductive layer is a metal mesh, and includes an in-plane conductive layer 21 and a frame conductive layer 22. Specifically, in order to ensure the visual effect, the width of the metal wire of the metal grid of the in-plane conductive layer 21 is more than 20 μm, the distance between two adjacent metal wires is greater than 200 μm, the thickness of the in-plane conductive layer 21 can reach the nanometer level, and the thickness and the width of the metal wires can be calculated according to the loaded current value. In order to ensure the normal operation of large current and increase heat dissipation, the metal traces of the frame conductive layer 22 are designed as an integral structure without being divided into thinner lines. If the width of the frame conductive layer 22 is 1.5mm or less and the thickness is 1 μm or less, the flatness is excellent.
In addition, in order to guarantee that the frame wiring can normally work at a large current, the thickness of the frame conducting layer and the thickness of the in-plane conducting layer can be designed differently: if the thickness of the conductive layer in the plane is in nanometer (nm) level, the frame routing calculates the thickness and the width of the conductive layer of the frame according to the loaded current value, and the thickness can reach several mum level.
When the second conductive layer is implemented, indium tin oxide or nano silver wire, or a nano silver wire conductive layer plus a copper wiring conductive layer, or an indium tin oxide conductive layer plus a copper wiring conductive layer may be used.
The total light transmittance of the finally formed multilayer conductive layer in embodiment 1 of the present invention is more than 80%, and the sheet resistance in the frame region can be as low as milliohm, for example, as low as 1 milliohm to 500 milliohm.
The invention also discloses a directional ultrasonic transparent screen which comprises the superconducting narrow frame conducting device.
The optical transparent conducting layer is formed by compounding multiple conducting layers, the conducting performance of the conducting layers is improved, the total light transmittance of the conducting layers formed by compounding is over 80%, the minimum sheet resistance can be 1-500 milliohms, the width of frame routing is lower than 1.5mm, an ultra-narrow frame is achieved, the thickness of the frame routing is lower than 1 micrometer, and the formed conducting layers are excellent in flatness. 2. The invention adopts the latticed copper wires or the metal grids to replace the existing indium tin oxide conducting layer or the nanometer silver layer, thereby greatly reducing the sheet resistance while ensuring the total light transmittance of the conducting layer, and greatly improving the sound pressure performance of the manufactured directional ultrasonic transparent screen compared with the existing optical transparent conducting layer.
The foregoing descriptions of specific exemplary embodiments of the present invention have been presented for purposes of illustration and description. It is not intended to limit the invention to the precise form disclosed, and obviously many modifications and variations are possible in light of the above teaching. The exemplary embodiments were chosen and described in order to explain certain principles of the invention and its practical application to enable one skilled in the art to make and use various exemplary embodiments of the invention and various alternatives and modifications as are suited to the particular use contemplated. It is intended that the scope of the invention be defined by the claims and their equivalents.
Claims (10)
1. A superconducting narrow-bezel conductive device, comprising:
a conductive base body, a conductive layer and a conductive layer,
the multilayer conductive layer is stacked up and down in sequence and arranged on the conductive substrate, one conductive layer of the multilayer conductive layer comprises an in-plane conductive layer and a frame conductive layer, the width of the frame conductive layer is less than 1.5mm, the thickness of the frame conductive layer is less than 1 mu m, the thickness of the in-plane conductive layer is less than or equal to the thickness of the frame conductive layer, the total light transmittance of the multilayer conductive layer is more than 80%, and the minimum square resistance is 1-500 milliohms.
2. The superconducting narrow-bezel conducting device according to claim 1, wherein the plurality of conducting layers comprise a first conducting layer and at least one second conducting layer, the first conducting layer is disposed on the conducting substrate, the second conducting layer is disposed on the first conducting layer, the first conducting layer comprises the in-plane conducting layer and the bezel conducting layer, the first conducting layer is a copper trace, and the second conducting layer is an indium tin oxide conducting layer or a silver nanowire conducting layer.
3. The superconducting narrow-bezel conducting device according to claim 1, wherein the plurality of conducting layers comprise a first conducting layer and at least one second conducting layer, the first conducting layer is disposed on the conducting substrate, the second conducting layer is disposed on the first conducting layer, the second conducting layer comprises the in-plane conducting layer and a bezel conducting layer, the first conducting layer is an indium tin oxide conducting layer or a nano-silver wire conducting layer, and the second conducting layer is a copper trace.
4. The conducting device of claim 1, wherein the plurality of conducting layers comprise a first conducting layer and at least one second conducting layer, the first conducting layer is disposed on the conducting substrate, the second conducting layer is disposed on the first conducting layer, the first conducting layer comprises the in-plane conducting layer and the border conducting layer, the first conducting layer is a metal grid, and the second conducting layer is an indium tin oxide conducting layer, or a nano silver wire conducting layer plus a copper wiring conducting layer, or an indium tin oxide conducting layer plus a copper wiring conducting layer.
5. A superconducting narrow-bezel conducting device according to claims 2 to 4, wherein the in-plane conducting layer comprises a plurality of tracks, each track has a width of 20 μm or more, and a distance between two adjacent tracks is greater than 20 μm.
6. A superconducting narrow-bezel conducting device according to claim 2 or 3, wherein the in-plane conducting layer and the bezel conducting layer are realized by one operation or by a divided operation.
7. The superconducting narrow-bezel conducting device according to claim 6, wherein the in-plane conducting layer and the bezel conducting layer are implemented by one operation, the operation comprises: and plating copper on the whole surface of the conductive substrate or the first conductive layer to form a first copper layer, and then exposing and developing the first copper layer to form a frame conductive layer and an in-plane copper wiring.
8. The superconducting narrow-bezel conducting device according to claim 6, wherein when the in-plane conducting layer and the bezel conducting layer are implemented by a split operation, the operation steps comprise: the frame conducting layer is formed on the conducting substrate or the first conducting layer in a spraying or sputtering mode; and the in-plane conducting layer is subjected to whole-surface copper plating on the conducting substrate or the area of the first conducting layer except the frame conducting layer to form a second copper layer, and then the second copper layer is subjected to exposure and development to form the in-plane copper wiring.
9. The superconducting narrow bezel conductive device of claim 1, wherein other conductive layers of the plurality of conductive layers are formed by spraying or sputtering.
10. A directional ultrasound transparent screen, comprising: a superconducting narrow-bezel conducting device as claimed in any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111062251.9A CN114388173B (en) | 2021-09-10 | 2021-09-10 | Directional ultrasonic transparent screen |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111062251.9A CN114388173B (en) | 2021-09-10 | 2021-09-10 | Directional ultrasonic transparent screen |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114388173A true CN114388173A (en) | 2022-04-22 |
| CN114388173B CN114388173B (en) | 2023-10-31 |
Family
ID=81194683
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111062251.9A Active CN114388173B (en) | 2021-09-10 | 2021-09-10 | Directional ultrasonic transparent screen |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114388173B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115086830A (en) * | 2022-04-28 | 2022-09-20 | 苏州清听声学科技有限公司 | Directional display device and electronic device |
Citations (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010219948A (en) * | 2009-03-17 | 2010-09-30 | Sharp Corp | Display panel and method of manufacturing same |
| CN102498462A (en) * | 2009-09-11 | 2012-06-13 | 日本写真印刷株式会社 | Narrow frame touch input sheet, manufacturing method of same, and conductive sheet used in narrow frame touch input sheet |
| US20130147768A1 (en) * | 2011-12-12 | 2013-06-13 | James L. Aroyan | Acoustic Touch Signal Dispersion Mitigation |
| CN103294276A (en) * | 2013-06-08 | 2013-09-11 | 南昌欧菲光科技有限公司 | Touch screen electrode and manufacturing method thereof |
| CN203299798U (en) * | 2013-06-18 | 2013-11-20 | 格林精密部件（惠州）有限公司 | Capacitance touch control screen adopting copper plating conductive base material |
| CN104571742A (en) * | 2013-10-25 | 2015-04-29 | 胜华科技股份有限公司 | Capacitive touch panel and method for manufacturing same |
| CN204390206U (en) * | 2015-01-06 | 2015-06-10 | 东莞市胜大光电科技有限公司 | OGS touch screen conducting wire wire structures |
| CN207037632U (en) * | 2017-08-09 | 2018-02-23 | 江西合力泰科技有限公司 | GFM individual layer multiple spot Rimless touch-screens |
| CN207233411U (en) * | 2017-08-02 | 2018-04-13 | 意力(广州)电子科技有限公司 | Conducting film and touch screen |
| CN207924645U (en) * | 2018-04-10 | 2018-09-28 | 蓝思科技（长沙）有限公司 | A kind of flexibility touch-control sensor and a kind of flexible touch-control display panel |
| CN108803946A (en) * | 2018-09-07 | 2018-11-13 | 蓝思科技（长沙）有限公司 | A kind of flexibility narrow frame touch-control sensor and preparation method thereof |
| CN108829293A (en) * | 2018-09-10 | 2018-11-16 | 业成科技（成都）有限公司 | Touch panel and preparation method thereof |
| WO2019207648A1 (en) * | 2018-04-24 | 2019-10-31 | 日立化成株式会社 | Photosensitive resin composition, transfer-type photosensitive film, substrate having cured film attached thereto, and sensing device |
| US20190364665A1 (en) * | 2018-05-22 | 2019-11-28 | C3Nano Inc. | Silver-based transparent conductive layers interfaced with copper traces and methods for forming the structures |
| CN111240507A (en) * | 2018-11-28 | 2020-06-05 | 日东电工株式会社 | Conductive thin film and patterning method thereof |
| CN111722742A (en) * | 2019-03-21 | 2020-09-29 | 南昌欧菲光科技有限公司 | Transparent conductive film and preparation method thereof |
| CN213338695U (en) * | 2020-09-04 | 2021-06-01 | 牧东光电科技有限公司 | Multifunctional touch screen with ultrathin and ultra-narrow frame |
-
2021
- 2021-09-10 CN CN202111062251.9A patent/CN114388173B/en active Active
Patent Citations (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010219948A (en) * | 2009-03-17 | 2010-09-30 | Sharp Corp | Display panel and method of manufacturing same |
| CN102498462A (en) * | 2009-09-11 | 2012-06-13 | 日本写真印刷株式会社 | Narrow frame touch input sheet, manufacturing method of same, and conductive sheet used in narrow frame touch input sheet |
| US20130147768A1 (en) * | 2011-12-12 | 2013-06-13 | James L. Aroyan | Acoustic Touch Signal Dispersion Mitigation |
| CN103294276A (en) * | 2013-06-08 | 2013-09-11 | 南昌欧菲光科技有限公司 | Touch screen electrode and manufacturing method thereof |
| CN203299798U (en) * | 2013-06-18 | 2013-11-20 | 格林精密部件（惠州）有限公司 | Capacitance touch control screen adopting copper plating conductive base material |
| CN104571742A (en) * | 2013-10-25 | 2015-04-29 | 胜华科技股份有限公司 | Capacitive touch panel and method for manufacturing same |
| CN204390206U (en) * | 2015-01-06 | 2015-06-10 | 东莞市胜大光电科技有限公司 | OGS touch screen conducting wire wire structures |
| CN207233411U (en) * | 2017-08-02 | 2018-04-13 | 意力(广州)电子科技有限公司 | Conducting film and touch screen |
| CN207037632U (en) * | 2017-08-09 | 2018-02-23 | 江西合力泰科技有限公司 | GFM individual layer multiple spot Rimless touch-screens |
| CN207924645U (en) * | 2018-04-10 | 2018-09-28 | 蓝思科技（长沙）有限公司 | A kind of flexibility touch-control sensor and a kind of flexible touch-control display panel |
| WO2019207648A1 (en) * | 2018-04-24 | 2019-10-31 | 日立化成株式会社 | Photosensitive resin composition, transfer-type photosensitive film, substrate having cured film attached thereto, and sensing device |
| US20190364665A1 (en) * | 2018-05-22 | 2019-11-28 | C3Nano Inc. | Silver-based transparent conductive layers interfaced with copper traces and methods for forming the structures |
| CN108803946A (en) * | 2018-09-07 | 2018-11-13 | 蓝思科技（长沙）有限公司 | A kind of flexibility narrow frame touch-control sensor and preparation method thereof |
| CN108829293A (en) * | 2018-09-10 | 2018-11-16 | 业成科技（成都）有限公司 | Touch panel and preparation method thereof |
| CN111240507A (en) * | 2018-11-28 | 2020-06-05 | 日东电工株式会社 | Conductive thin film and patterning method thereof |
| CN111722742A (en) * | 2019-03-21 | 2020-09-29 | 南昌欧菲光科技有限公司 | Transparent conductive film and preparation method thereof |
| CN213338695U (en) * | 2020-09-04 | 2021-06-01 | 牧东光电科技有限公司 | Multifunctional touch screen with ultrathin and ultra-narrow frame |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115086830A (en) * | 2022-04-28 | 2022-09-20 | 苏州清听声学科技有限公司 | Directional display device and electronic device |
| CN115086830B (en) * | 2022-04-28 | 2024-03-26 | 苏州清听声学科技有限公司 | Directional display device and electronic device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114388173B (en) | 2023-10-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9823801B2 (en) | Touch panel and repairing method thereof | |
| JP3192251U (en) | Touch panel and touch display device | |
| KR102056928B1 (en) | Touch screen panel and method for manufacturing the same | |
| TWI417603B (en) | Method for fabricating touch panel | |
| KR20120018059A (en) | Substrate for touch screen panel, touch screen panel and fabrication method thereof | |
| JP5075282B1 (en) | Input device | |
| KR20120137216A (en) | Substrate for touch screen sensor, touch screen sensor and touch screen panel | |
| TWI569289B (en) | Conductive structure body and method for manufacturing the same, and display device | |
| JP2011123860A (en) | Capacitive touch control device structure | |
| US9058083B2 (en) | Touch sensing structure and method for making the same | |
| JP2013206315A (en) | Film-shaped touch panel sensor and method for manufacturing the same | |
| US10684735B2 (en) | Capacitive sensor and device | |
| TW201423534A (en) | Touch panel | |
| CN107422904B (en) | Touch screen and electronic equipment | |
| TW201514802A (en) | Touch window and touch device including the same | |
| CN103632752B (en) | Metal nanowire film and manufacture method thereof | |
| CN114388173A (en) | Superconducting narrow-frame conducting device and directional ultrasonic transparent screen | |
| CN113053920B (en) | Display substrate and display device | |
| CN114327118A (en) | Transparent conductive film, method for manufacturing transparent conductive film, and touch panel | |
| CN106980399B (en) | Touch panel | |
| CN109002206B (en) | Touch structure, display device and preparation method of touch structure | |
| KR20150019058A (en) | Touch screen panel and manufacturing method thereof | |
| CN212391785U (en) | Transparent conductive film and touch panel | |
| TWM593003U (en) | Dual touch sensor structure | |
| TWI759905B (en) | Transparent conductive film and method for making transparent conductive film and touch panel |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |