CN114335358A - Preparation method of columnar electrode structure of perovskite solar cell - Google Patents
Preparation method of columnar electrode structure of perovskite solar cell Download PDFInfo
- Publication number
- CN114335358A CN114335358A CN202111456016.XA CN202111456016A CN114335358A CN 114335358 A CN114335358 A CN 114335358A CN 202111456016 A CN202111456016 A CN 202111456016A CN 114335358 A CN114335358 A CN 114335358A
- Authority
- CN
- China
- Prior art keywords
- electrode structure
- layer
- columnar electrode
- metal
- depositing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 239000010410 layer Substances 0.000 claims abstract description 115
- 229910052751 metal Inorganic materials 0.000 claims abstract description 42
- 239000002184 metal Substances 0.000 claims abstract description 42
- 238000000151 deposition Methods 0.000 claims abstract description 35
- 238000000034 method Methods 0.000 claims abstract description 34
- 230000005540 biological transmission Effects 0.000 claims abstract description 30
- 239000007769 metal material Substances 0.000 claims abstract description 30
- 239000012792 core layer Substances 0.000 claims abstract description 25
- 238000005530 etching Methods 0.000 claims abstract description 20
- 238000010329 laser etching Methods 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 claims description 29
- 239000004065 semiconductor Substances 0.000 claims description 24
- 239000010949 copper Substances 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 claims description 3
- 229910052582 BN Inorganic materials 0.000 claims description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 229910005855 NiOx Inorganic materials 0.000 claims description 3
- 229920001167 Poly(triaryl amine) Polymers 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N SnO2 Inorganic materials O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 238000000231 atomic layer deposition Methods 0.000 claims description 3
- JXMPOKOYFWPYNC-UHFFFAOYSA-N barium(2+) tin(4+) diborate Chemical compound [Sn+4].[Ba++].[O-]B([O-])[O-].[O-]B([O-])[O-] JXMPOKOYFWPYNC-UHFFFAOYSA-N 0.000 claims description 3
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 claims description 3
- 229910052793 cadmium Inorganic materials 0.000 claims description 3
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- PDZKZMQQDCHTNF-UHFFFAOYSA-M copper(1+);thiocyanate Chemical compound [Cu+].[S-]C#N PDZKZMQQDCHTNF-UHFFFAOYSA-M 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 229910003472 fullerene Inorganic materials 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910021389 graphene Inorganic materials 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims 3
- 239000000919 ceramic Substances 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 230000009286 beneficial effect Effects 0.000 abstract description 3
- 239000000969 carrier Substances 0.000 description 5
- 230000005525 hole transport Effects 0.000 description 5
- 238000001755 magnetron sputter deposition Methods 0.000 description 5
- 229910021595 Copper(I) iodide Inorganic materials 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000005192 partition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 2
- 239000011358 absorbing material Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- LSXDOTMGLUJQCM-UHFFFAOYSA-M copper(i) iodide Chemical compound I[Cu] LSXDOTMGLUJQCM-UHFFFAOYSA-M 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000012047 saturated solution Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The invention provides a preparation method of a columnar electrode structure of a perovskite solar cell, which comprises the following steps: firstly, etching off a metal material outside a reserved position on the surface of a plane metal to obtain an initial columnar electrode structure; depositing a first carrier transmission layer on the surface of the initial columnar electrode structure to obtain a columnar electrode structure; the method comprises the steps of preparing an initial columnar electrode structure by using a laser etching method, and depositing a first carrier transmission layer by using a surface deposition method to obtain a columnar electrode structure; the method can process the position beneficial to depositing the carrier transmission layer on the surface of the fine electrode core layer, and finally prepare the columnar electrode structure, so that the prepared perovskite battery has higher photoelectric conversion efficiency.
Description
Technical Field
The invention relates to the technical field of perovskite solar cells, in particular to a preparation method of a columnar electrode structure of a perovskite solar cell.
Background
Perovskite solar cells (perovskite solar cells) are solar cells using perovskite type organic metal halide semiconductors as light absorbing materials, and belong to the third generation solar cells, which are also called new concept solar cells.
When the perovskite layer is irradiated by sunlight, photons are absorbed firstly to generate electron-hole pairs; due to the difference of exciton binding energy of perovskite materials, the carriers become free carriers or form excitons, and because the perovskite materials often have lower carrier recombination probability and higher carrier mobility, the diffusion distance and the service life of the carriers are longer; these non-recombined electrons and holes are then collected by the electron transport layer and the hole transport layer, respectively, i.e. electrons are transported from the perovskite layer to the electron transport layer and finally to the ITO, while holes are transported from the perovskite layer to the hole transport layer and finally to the metal electrode. Of course, these processes are not always accompanied by the loss of some carriers, such as the reversible recombination of electrons of the electron transport layer and holes of the perovskite layer, the recombination of electrons of the electron transport layer and holes of the hole transport layer (in the case that the perovskite layer is not dense), and the recombination of electrons of the perovskite layer and holes of the hole transport layer, so that the loss of these carriers should be minimized in order to improve the overall performance of the battery; finally, the photocurrent is generated through the electrical circuit connecting the FTO and the metal electrode.
At present, perovskite solar cells are well developed, but in the prior art, metal electrode parts of perovskite solar cells are mostly in a planar structure, and the incident angle of incident light is required to be within a required range, so that the application of the perovskite solar cells is limited.
Disclosure of Invention
The invention aims to provide a preparation method of a columnar electrode structure of a perovskite solar cell, the preparation method can be used for preparing the columnar electrode so as to improve the photoelectric conversion efficiency of the perovskite solar cell, and the preparation method has wide application prospect.
In view of the above, the present application provides a method for preparing a columnar electrode structure of a perovskite solar cell, comprising the following steps:
etching off the metal material outside the reserved position on the surface of the planar metal to obtain an initial columnar electrode structure;
depositing a first carrier transmission layer on the surface of the initial columnar electrode structure to obtain a columnar electrode structure;
the columnar electrode structure comprises a metal electrode core layer and first carrier transmission layers arranged on the side face of the metal electrode core layer side by side.
Preferably, the length of the first carrier transport layer is the same as that of the metal electrode core layer, or the height of the first carrier transport layer is lower than that of the metal electrode core layer.
Preferably, the columnar electrode structure further comprises an insulating layer which is parallel to the first carrier transport layer and is in contact with the metal electrode core layer; or the columnar electrode structure also comprises an insulating layer and a second carrier transmission layer which are sequentially arranged side by side with the first carrier transmission layer and are in contact with the metal electrode core layer.
Preferably, when the columnar electrode structure further includes an insulating layer alongside the first carrier transport layer and in contact with the metal electrode core layer, the method further includes, after depositing the first carrier transport layer on the surface of the initial columnar electrode structure:
and etching the metal material outside the reserved position on the surface of the plane metal, and depositing an insulating layer.
Preferably, the semiconductor material in the first carrier transport layer is an N-type semiconductor material or a P-type semiconductor material; the N-type semiconductor material is selected from TiO2Fullerene, graphene, SnO2And ZnO; the P-type semiconductor material is selected from NiOx、Cu2One or more of O, CuI, PTAA and CuSCN.
Preferably, the metal material is selected from one or more of gold, silver, copper, iron, aluminum, cadmium, molybdenum and titanium.
Preferably, the material of the insulating layer is selected from SiO2、Si3N4One or more of beryllium oxide, boron nitride, aluminum oxide, and tin barium borate.
Preferably, the diameter of the columnar electrode structure is 100nm to 500 μm, and the thicknesses of the first carrier transport layer and the insulating layer are both 5nm to 100 nm.
Preferably, the etching method is laser etching, and the deposition method is selected from vapor deposition or atomic layer deposition.
The application provides a preparation method of a columnar electrode structure of a perovskite solar cell, which comprises the following steps: firstly, etching off a metal material outside a reserved position on the surface of a plane metal to obtain an initial columnar electrode structure; depositing a first carrier transmission layer on the surface of the initial columnar electrode structure to obtain a columnar electrode structure; the method comprises the steps of preparing an initial columnar electrode structure by using a laser etching method, and depositing a first carrier transmission layer by using a surface deposition method to obtain a columnar electrode structure; the method can process the position which is beneficial to depositing the carrier transmission layer on the surface of the fine electrode core layer, and finally prepare the columnar electrode structure, thereby improving the photoelectric conversion efficiency of the perovskite battery.
Drawings
FIG. 1 is a schematic structural diagram of a perovskite solar cell provided by the present invention;
fig. 2 is a schematic view of a pillar-shaped electrode structure provided by the present invention.
Detailed Description
For a further understanding of the invention, reference will now be made to the preferred embodiments of the invention by way of example, and it is to be understood that the description is intended to further illustrate features and advantages of the invention, and not to limit the scope of the claims.
As shown in fig. 1, fig. 1 is a schematic structural diagram of a perovskite solar cell of the present invention, wherein 1 is a metal electrode core layer, 2 is an insulating layer, 3 is a first carrier transport layer, 4 is a spherical perovskite layer, and 5 is a TCO layer; in some embodiments, 1 and 2 form a columnar electrode structure, and in some embodiments, 1-3 form the columnar electrode structure described herein.
Specifically, the preparation method of the columnar electrode structure comprises the following steps:
etching off the metal material outside the reserved position on the surface of the planar metal to obtain an initial columnar electrode structure;
depositing a first carrier transmission layer on the surface of the initial columnar electrode structure to obtain a columnar electrode structure;
the columnar electrode structure comprises a metal electrode core layer and first carrier transmission layers arranged on the side face of the metal electrode core layer side by side.
In the present application, the first carrier transport layer and the metal electrode core layer have the same length, as shown in the right drawing of fig. 2; or, the height of the first carrier transport layer is lower than that of the first metal electrode core layer, as shown in the left diagram of fig. 2.
In the scheme that only the first carrier transmission layer is included in the columnar electrode structure, the first step of the columnar electrode structure is to etch away metal materials outside the reserved position on the surface of a plane metal and only remain the residual columnar part; the position of the metal material is the position of the first carrier transport layer; then deposition is carried out.
In the scheme that the columnar conductive structure further comprises an insulating layer and a second carrier transport layer, the insulating layer is parallel to the first carrier transport layer, or the insulating layer and the second carrier transport layer are sequentially parallel to the first carrier transport layer, and according to actual needs, such as a spherical laminated battery or a spherical multijunction battery, the insulating layer and the third carrier transport layer are further sequentially arranged on the basis of the second carrier transport layer.
According to the above description, on the basis that the columnar electrode structure only includes the first carrier transport layer and the insulating layer, the preparation method of the columnar electrode structure specifically includes: etching off the metal material outside the reserved position on the surface of the plane metal, wherein the position of the metal material is the position of the first carrier transport layer; depositing a first carrier transmission layer; and etching the metal material outside the reserved position on the surface of the plane metal, wherein the position of the metal material is the insulating layer which is arranged side by side with the first carrier transmission layer, and finally depositing the insulating layer.
In the scheme that the columnar electrode structure comprises a first carrier transmission layer, an insulating layer and a second carrier transmission layer, the preparation method of the columnar electrode structure comprises the following specific positions: etching off the metal material outside the reserved position on the surface of the plane metal, wherein the position of the metal material is the position of the first carrier transport layer; depositing a first carrier transmission layer; then etching off the metal material outside the reserved position on the surface of the plane metal, wherein the position of the metal material is the insulating layer which is arranged side by side with the first carrier transmission layer, and then depositing the insulating layer; and then etching the metal material outside the reserved position on the surface of the plane metal, wherein the position of the metal material is the second carrier transmission layer which is arranged side by side with the insulating layer, and then depositing the second carrier transmission layer.
Also, according to the above description, when the scheme further includes the insulating layer and the third carrier transport layer in the columnar electrode structure, the subsequent etching-deposition is sequentially performed.
In the above process, the metal material is selected from one or more of metal materials selected from gold, silver, copper, iron, aluminum, cadmium, molybdenum and titanium. The semiconductor material in the first carrier transmission layer is an N-type semiconductor material or a P-type semiconductor material; the N-type semiconductor material is selected from TiO2Fullerene, graphene, SnO2And ZnO; the P-type semiconductor material is selected from NiOx、Cu2One or more of O, CuI, PTAA and CuSCN. The same second carrier transport layer and the same third carrier transport layer are independently selected from the above materials. The material of the insulating layer is selected from SiO2、Si3N4One or more of beryllium oxide, boron nitride, aluminum oxide, and tin barium borate.
In the application, the diameter of the columnar electrode structure is 100 nm-500 μm, and the thicknesses of the first carrier transmission layer and the insulating layer are both 5 nm-100 nm.
According to the present invention, in the above-mentioned preparation process, the etching is selected from laser etching, the specific operation of which is performed according to a method well known to those skilled in the art, and the present application is not particularly limited; the deposition is in particular a vapor deposition or an atomic layer deposition, which, likewise, follow methods well known to the person skilled in the art, without this application being restricted in particular.
The application provides a preparation method of a columnar electrode structure of a perovskite solar cell, which comprises the following steps: firstly, etching off a metal material outside a reserved position on the surface of a plane metal to obtain an initial columnar electrode structure; depositing a first carrier transmission layer on the surface of the initial columnar electrode structure to obtain a columnar electrode structure; the method comprises the steps of preparing an initial columnar electrode structure by using a laser etching method, and depositing a first carrier transmission layer by using a surface deposition method to obtain a columnar electrode structure; the method can process the position which is beneficial to depositing the carrier transmission layer on the surface of the fine electrode core layer, and finally prepare the columnar electrode structure, thereby improving the photoelectric conversion efficiency of the perovskite battery.
For further understanding of the present invention, the following examples are provided to illustrate the method for preparing the pillar-shaped electrode structure of the present invention, and the scope of the present invention is not limited by the following examples.
Example 1
Etching the metal material outside the reserved position on the surface of the plane metal (copper) by adopting a laser etching method (the reserved position is as high as the height of a subarea to be formed);
depositing a layer of N-type semiconductor material (specifically SnO) at the etched position by magnetron sputtering2) The thickness of the electrode is 60nm, and a columnar electrode structure with a metal electrode core layer and an N-type semiconductor material layer (an electron transport layer) is obtained.
Example 2
Etching the metal material outside the reserved position on the surface of the plane metal (copper) by adopting a laser etching method (the reserved position is as high as the height of a subarea to be formed); depositing a layer of N-type semiconductor material (specifically SnO) at the etched position by magnetron sputtering2) The thickness of the film is 60 nm;
on the basis, a laser etching method is adopted to etch the metal material outside the reserved position again (the height of the reserved position is the same as that of the partition to be formed); depositing an insulating layer (specifically SiO) at the etched position by magnetron sputtering2) The thickness of the electrode is 60nm, and a columnar electrode structure with a metal electrode core layer, an N-type semiconductor material (an electron transport layer) and an insulating layer is obtained.
Example 3
Etching the metal material outside the reserved position on the surface of the plane metal (copper) by adopting a laser etching method (the reserved position is as high as the height of a subarea to be formed); depositing a layer of N-type semiconductor material (specifically SnO) at the etched position by magnetron sputtering2) The thickness of the film is 60 nm;
on the basis of which laser is adoptedEtching the metal material outside the reserved position again by using a photoetching method (the reserved position is as high as the height of the partition to be formed); depositing an insulating layer (specifically SiO) at the etched position by magnetron sputtering2) The thickness of the film is 60 nm;
etching the metal material outside the reserved position by adopting a laser etching method on the basis of the electrode structure (the reserved position is as high as the partition to be formed); and depositing a layer of P-type semiconductor material (specifically, CuI) with the thickness of 60nm at the etched position by adopting a chemical vapor deposition method and taking a cuprous iodide saturated solution as a precursor solution to obtain the columnar electrode structure with the metal electrode core layer, the N-type semiconductor material (electron transport layer), the insulating layer and the P-type semiconductor material (hole transport layer).
The above description of the embodiments is only intended to facilitate the understanding of the method of the invention and its core idea. It should be noted that, for those skilled in the art, it is possible to make various improvements and modifications to the present invention without departing from the principle of the present invention, and those improvements and modifications also fall within the scope of the claims of the present invention.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (9)
1. A preparation method of a columnar electrode structure of a perovskite solar cell comprises the following steps:
etching off the metal material outside the reserved position on the surface of the planar metal to obtain an initial columnar electrode structure;
depositing a first carrier transmission layer on the surface of the initial columnar electrode structure to obtain a columnar electrode structure;
the columnar electrode structure comprises a metal electrode core layer and first carrier transmission layers arranged on the side face of the metal electrode core layer side by side.
2. The production method according to claim 1, wherein the first carrier transport layer has the same length as the metal electrode core layer, or has a height lower than that of the metal electrode core layer.
3. The method according to claim 2, wherein the columnar electrode structure further comprises an insulating layer which is in contact with the metal electrode core layer and is arranged side by side with the first carrier transport layer; or the columnar electrode structure also comprises an insulating layer and a second carrier transmission layer which are sequentially arranged side by side with the first carrier transmission layer and are in contact with the metal electrode core layer.
4. The method according to claim 3, wherein when the columnar electrode structure further comprises an insulating layer which is in contact with the metal electrode core layer and is alongside with the first carrier transport layer, the method further comprises, after depositing the first carrier transport layer on the surface of the initial columnar electrode structure:
and etching the metal material outside the reserved position on the surface of the plane metal, and depositing an insulating layer.
5. The manufacturing method according to claim 1, wherein the semiconductor material in the first carrier transport layer is an N-type semiconductor material or a P-type semiconductor material; the N-type semiconductor material is selected from TiO2Fullerene, graphene, SnO2And ZnO; the P-type semiconductor material is selected from NiOx、Cu2One or more of O, CuI, PTAA and CuSCN.
6. The method according to claim 1, wherein the metal material is one or more selected from gold, silver, copper, iron, aluminum, cadmium, molybdenum, and titanium.
7. Method for producing a ceramic body according to claim 3 or 4, wherein the material of the insulating layer is selected from SiO2、Si3N4One or more of beryllium oxide, boron nitride, aluminum oxide, and tin barium borate.
8. The method according to claim 1, wherein the diameter of the columnar electrode structure is 100nm to 500 μm, and the thickness of the first carrier transport layer and the thickness of the insulating layer are both 5nm to 100 nm.
9. The preparation method according to any one of claims 1 to 8, wherein the etching method is laser etching, and the deposition method is selected from vapor deposition or atomic layer deposition.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111456016.XA CN114335358A (en) | 2021-12-01 | 2021-12-01 | Preparation method of columnar electrode structure of perovskite solar cell |
| PCT/CN2022/100361 WO2023098038A1 (en) | 2021-12-01 | 2022-06-22 | Method for preparing columnar electrode structure of perovskite solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111456016.XA CN114335358A (en) | 2021-12-01 | 2021-12-01 | Preparation method of columnar electrode structure of perovskite solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114335358A true CN114335358A (en) | 2022-04-12 |
Family
ID=81047884
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111456016.XA Pending CN114335358A (en) | 2021-12-01 | 2021-12-01 | Preparation method of columnar electrode structure of perovskite solar cell |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN114335358A (en) |
| WO (1) | WO2023098038A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023098038A1 (en) * | 2021-12-01 | 2023-06-08 | 中国华能集团清洁能源技术研究院有限公司 | Method for preparing columnar electrode structure of perovskite solar cell |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107240613A (en) * | 2017-05-09 | 2017-10-10 | 南京邮电大学 | A kind of unleaded perovskite solar cell |
| CN112271260A (en) * | 2020-11-25 | 2021-01-26 | 昆山协鑫光电材料有限公司 | Perovskite solar cell and preparation method thereof |
| CN113690372A (en) * | 2021-09-10 | 2021-11-23 | 华能新能源股份有限公司 | Perovskite solar cell and preparation method thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018190928A (en) * | 2017-05-11 | 2018-11-29 | 国立研究開発法人物質・材料研究機構 | Perovskite solar battery and manufacturing method therefor |
| CN111599921B (en) * | 2020-04-09 | 2023-07-21 | 南开大学 | Nested full back contact perovskite solar cell and preparation method thereof |
| CN114335358A (en) * | 2021-12-01 | 2022-04-12 | 华能新能源股份有限公司 | Preparation method of columnar electrode structure of perovskite solar cell |
-
2021
- 2021-12-01 CN CN202111456016.XA patent/CN114335358A/en active Pending
-
2022
- 2022-06-22 WO PCT/CN2022/100361 patent/WO2023098038A1/en unknown
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107240613A (en) * | 2017-05-09 | 2017-10-10 | 南京邮电大学 | A kind of unleaded perovskite solar cell |
| CN112271260A (en) * | 2020-11-25 | 2021-01-26 | 昆山协鑫光电材料有限公司 | Perovskite solar cell and preparation method thereof |
| CN113690372A (en) * | 2021-09-10 | 2021-11-23 | 华能新能源股份有限公司 | Perovskite solar cell and preparation method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023098038A1 (en) * | 2021-12-01 | 2023-06-08 | 中国华能集团清洁能源技术研究院有限公司 | Method for preparing columnar electrode structure of perovskite solar cell |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2023098038A1 (en) | 2023-06-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10535791B2 (en) | 2-terminal metal halide semiconductor/C-silicon multijunction solar cell with tunnel junction | |
| KR20190010197A (en) | Perovskite solar cell and tandem solar cell including the same | |
| CN111081878A (en) | Perovskite/silicon-based heterojunction laminated solar cell and preparation method thereof | |
| US11616160B2 (en) | Tandem solar cell | |
| KR101208272B1 (en) | Solar Cell of having Photovoltaic Structures on Both Sides of Substrate and Method of forming the same | |
| TWI460867B (en) | Photovoltaic device and method of making same | |
| CN114678430B (en) | Electron selective passivation contact structure, solar cell and preparation method | |
| KR20190089394A (en) | Solar cell | |
| CN212934664U (en) | Perovskite solar cell with composite transmission layer | |
| CN114883427A (en) | Crystalline silicon heterojunction solar cell structure and preparation method thereof | |
| WO2023098038A1 (en) | Method for preparing columnar electrode structure of perovskite solar cell | |
| CN102568867A (en) | Laminated thin film solar battery | |
| CN215896438U (en) | Perovskite solar cell | |
| CN113690372B (en) | Perovskite solar cell and preparation method thereof | |
| KR102218417B1 (en) | Silicon solar cell including a carrier seletive thin layer and method of manufacturing the same | |
| CN116828873A (en) | Solar cell and manufacturing method thereof | |
| KR102591913B1 (en) | Solar cell | |
| US10243096B2 (en) | Crack-tolerant photovoltaic cell structure and fabrication method | |
| JP5645734B2 (en) | Solar cell element | |
| CN114744052B (en) | Solar cell and photovoltaic module | |
| CN113745366B (en) | Perovskite and crystalline silicon three-junction laminated solar cell and preparation method thereof | |
| KR20190021135A (en) | Method of manufacturing solar cell | |
| CN113571641A (en) | Perovskite solar cell with composite transmission layer and preparation method thereof | |
| CN111477750A (en) | Back electrode containing fluorescent material, perovskite solar cell and preparation method of back electrode | |
| KR101541108B1 (en) | solar cell and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20220412 |