CN215896438U - Perovskite solar cell - Google Patents
Perovskite solar cell Download PDFInfo
- Publication number
- CN215896438U CN215896438U CN202122197751.5U CN202122197751U CN215896438U CN 215896438 U CN215896438 U CN 215896438U CN 202122197751 U CN202122197751 U CN 202122197751U CN 215896438 U CN215896438 U CN 215896438U
- Authority
- CN
- China
- Prior art keywords
- layer
- perovskite
- solar cell
- spherical
- tco
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The present invention provides a perovskite solar cell comprising: a spherical perovskite layer; a TCO layer coating the spherical perovskite layer; a columnar electrode structure which extends outwards from the sphere center to form a spherical perovskite layer and penetrates through the TCO layer; the columnar electrode structure consists of a metal electrode core layer, a first carrier transmission layer and an insulating layer, wherein the first carrier transmission layer and the insulating layer are arranged on the side face of the metal electrode core layer side by side; the first carrier transmission layer completely wraps the inside of the spherical perovskite layer, and the insulating layer completely separates the metal electrode core layer from the TCO layer. Compared with the prior art, the perovskite solar cell provided by the utility model adopts a specific structure and a connection relation to form a microspherical structure with a counter electrode, has no requirement on the angle of incident light, and can expand the application field of the perovskite solar cell; and the specific structure and the connection relation can realize better interaction, and the large-area perovskite battery formed by self-assembling the perovskite battery has high photoelectric conversion efficiency and wide application prospect.
Description
Technical Field
The utility model relates to the technical field of perovskite solar cells, in particular to a perovskite solar cell.
Background
Perovskite solar cells (perovskite solar cells) are solar cells using perovskite type organic metal halide semiconductors as light absorbing materials, and belong to the third generation solar cells, which are also called new concept solar cells. When receiving the sunlight irradiation, the perovskite layer firstly absorbs photons to generate electron-hole pairs; due to the difference of exciton binding energy of perovskite materials, the carriers become free carriers or form excitons, and because the perovskite materials often have lower carrier recombination probability and higher carrier mobility, the diffusion distance and the service life of the carriers are longer; then, these non-recombined electrons and holes are collected by the electron transport layer and the hole transport layer, respectively, i.e. the electrons are transported from the perovskite layer to the electron transport layer and are finally collected by ITO, and the holes are transported from the perovskite layer to the hole transport layer and are finally collected by the metal electrode, of course, these processes are not always accompanied by some carrier losses, such as reversible recombination of electrons of the electron transport layer and holes of the perovskite layer, recombination of electrons of the electron transport layer and holes of the hole transport layer (in the case that the perovskite layer is not dense), and recombination of electrons of the perovskite layer and holes of the hole transport layer, so to improve the overall performance of the battery, these carrier losses should be minimized; finally, the photocurrent is generated through the electrical circuit connecting the FTO and the metal electrode.
At present, perovskite solar cells are well developed, but perovskite solar cells in the prior art are mostly in a planar structure, and the incident angle of incident light is required to be within a required range, so that the application of the perovskite solar cells is limited.
SUMMERY OF THE UTILITY MODEL
In view of the above, the present invention provides a perovskite solar cell, which has a microspherical structure with a counter electrode, has no requirement on the angle of incident light, can expand the application field of the perovskite solar cell, and has a high photoelectric conversion efficiency and a broad application prospect, wherein the large-area perovskite solar cell is formed by self-assembling the perovskite solar cell.
The present invention provides a perovskite solar cell comprising:
a spherical perovskite layer;
a TCO layer coating the spherical perovskite layer;
a columnar electrode structure which extends outwards from the sphere center to form a spherical perovskite layer and penetrates through the TCO layer;
the columnar electrode structure consists of a metal electrode core layer, a first carrier transmission layer and an insulating layer, wherein the first carrier transmission layer and the insulating layer are arranged on the side face of the metal electrode core layer side by side;
the first carrier transmission layer completely wraps the inside of the spherical perovskite layer, and the insulating layer completely separates the metal electrode core layer from the TCO layer.
Preferably, the radius R of the spherical perovskite layer is 300nm to 350 μm.
Preferably, the thickness of the TCO layer is 0.1% -30% of the radius R.
Preferably, the diameter of the columnar electrode structure is 100nm to 500 μm.
Preferably, the thickness of the carrier transport layer is 5nm to 100 nm.
Preferably, the thickness of the insulating layer is 5nm to 100 nm.
Preferably, a second carrier transport layer is further arranged between the spherical perovskite layer and the TCO layer.
The present invention provides a perovskite solar cell comprising: a spherical perovskite layer; a TCO layer coating the spherical perovskite layer; a columnar electrode structure which extends outwards from the sphere center to form a spherical perovskite layer and penetrates through the TCO layer; the columnar electrode structure consists of a metal electrode core layer, a first carrier transmission layer and an insulating layer, wherein the first carrier transmission layer and the insulating layer are arranged on the side face of the metal electrode core layer side by side; the first carrier transmission layer completely wraps the inside of the spherical perovskite layer, and the insulating layer completely separates the metal electrode core layer from the TCO layer. Compared with the prior art, the perovskite solar cell provided by the utility model adopts a specific structure and a connection relation to form a microspherical structure with a counter electrode, has no requirement on the angle of incident light, and can expand the application field of the perovskite solar cell; and the specific structure and the connection relation can realize better interaction, and the large-area perovskite battery formed by self-assembling the perovskite battery has high photoelectric conversion efficiency and wide application prospect.
In addition, the preparation method provided by the utility model has the advantages of simple process, mild condition, easiness in control and wide application prospect.
Drawings
Fig. 1 is a schematic structural diagram of a perovskite solar cell provided in an embodiment of the present invention.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the following embodiments of the present invention, and it should be understood that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The present invention provides a perovskite solar cell comprising:
a spherical perovskite layer;
a TCO layer coating the spherical perovskite layer;
a columnar electrode structure which extends outwards from the sphere center to form a spherical perovskite layer and penetrates through the TCO layer;
the columnar electrode structure consists of a metal electrode core layer, a first carrier transmission layer and an insulating layer, wherein the first carrier transmission layer and the insulating layer are arranged on the side face of the metal electrode core layer side by side;
the current carrier transmission layer is completely wrapped inside the spherical perovskite layer, and the insulating layer completely separates the metal electrode core layer from the TCO layer.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a perovskite solar cell according to an embodiment of the present invention; wherein, 1 is a metal electrode core layer, 2 is an insulating layer, 3 is a first carrier transmission layer, 4 is a spherical perovskite layer, and 5 is a TCO layer.
In the present invention, the spherical perovskite layer is formed of a perovskite material and has a spherical structure. In the present invention, the radius R of the spherical perovskite layer is preferably 300nm to 350 μm, and more preferably 400nm to 300 μm.
In the present invention, the TCO layer covers the spherical perovskite layer; on the basis, the spherical perovskite layer can be regarded as a sphere center, and the TCO layer is a sphere shell. In the present invention, the thickness of the TCO layer is preferably 0.1% to 30% of the radius R, more preferably 100nm to 400 nm.
In the present invention, the columnar electrode structure extends outward from the center of the sphere to form a spherical perovskite layer and penetrates through the TCO layer. In the utility model, the columnar electrode structure consists of a metal electrode core layer, a first carrier transmission layer and an insulating layer, wherein the first carrier transmission layer and the insulating layer are arranged on the side surface of the metal electrode core layer side by side.
In the utility model, the metal electrode core layer is made of a conductive material and is in a columnar structure, and the side surface of the metal electrode core layer is provided with the first carrier transmission layer and the insulating layer side by side.
In the present invention, the first carrier transport layer is formed of a semiconductor material, which is completely encapsulated inside the spherical perovskite layer; the thickness of the first carrier transport layer is preferably 5nm to 100nm, and more preferably 30nm to 80 nm.
In the present invention, the insulating layer is formed of an insulating layer material that completely separates the metal electrode core layer from the TCO layer; the thickness of the insulating layer is preferably 5nm to 100nm, and more preferably 20nm to 90 nm.
In the present invention, the first carrier transport layer and the insulating layer are preferably arranged side by side and in contact; the first carrier transport layer and the insulating layer are preferably the same thickness.
In the present invention, the diameter of the columnar electrode structure is preferably 100nm to 500 μm, more preferably 200nm to 300 μm; further, the aspect ratio of the columnar electrode structure is preferably not less than 2: 1, more preferably 5: 1.
in a preferred embodiment of the utility model, a second carrier transport layer is preferably also provided between the spherical perovskite layer and the TCO layer. In the present invention, the second carrier transport layer is formed of a semiconductor material, and covers the spherical perovskite layer, and the TCO layer further covers the second carrier transport layer.
In the present invention, the type of the second carrier transport layer is different from that of the first carrier transport layer, that is: if the first carrier transmission layer is an N-type transmission layer, the second carrier transmission layer is a P-type transmission layer; and if the first carrier transmission layer is a P-type transmission layer, the second carrier transmission layer is an N-type transmission layer.
The perovskite solar cell provided by the utility model adopts a specific structure and a connection relation to form a microspherical structure with a counter electrode, has no requirement on the angle of incident light, and can expand the application field of the perovskite solar cell; and the specific structure and the connection relation can realize better interaction, and the large-area perovskite battery formed by self-assembling the perovskite battery has high photoelectric conversion efficiency and wide application prospect.
The utility model also provides a preparation method of the perovskite solar cell in the technical scheme, which comprises the following steps:
a) forming a metal electrode core layer by using a conductive material, and depositing a first carrier transmission layer and an insulating layer on the side surface of the metal electrode core layer side by side in sequence to obtain a columnar electrode structure;
b) immersing one end of the first current carrier transmission layer deposited on the columnar electrode structure obtained in the step a) into a perovskite material solution for nucleation growth, and forming a microspherical perovskite structure at the end; and preparing a TCO layer on the surface of the formed microspherical perovskite structure to obtain the perovskite solar cell.
The method comprises the steps of firstly forming a metal electrode core layer by using a conductive material, and sequentially depositing a first current carrier transmission layer and an insulating layer on the side surface of the metal electrode core layer side by side to obtain a columnar electrode structure.
In the present invention, the process of obtaining the columnar electrode structure is preferably as follows:
a1) depositing at least two layers of photoresist on the surface of the planar metal laminated structure; punching holes in the photoresist by laser, wherein the depth of the holes reaches the surface of the planar metal laminated structure; then growing a conductive material in the hole by using an electroplating method to form a metal electrode core layer;
a2) washing the first layer of photoresist by using washing liquid, and depositing a layer of semiconductor material to form a first carrier transmission layer; and cleaning the second layer of photoresist by using a cleaning solution, and depositing a layer of insulating layer material to form an insulating layer to obtain the columnar electrode structure.
In the present invention, the planar metal layer structure is used for photoresist deposition, and the present invention is not particularly limited thereto; the metal is preferably selected from one or more of gold, silver, copper, iron, aluminum, cadmium, molybdenum, titanium, tin, tungsten, zinc, gallium, germanium, arsenic, selenium, rhodium, palladium, indium, antimony, osmium, iridium, platinum, thallium, bismuth, and polonium, more preferably gold, silver, copper, molybdenum, or titanium.
In the present invention, the photoresist used is a material well known to those skilled in the art; the thickness of each layer of the at least two layers of photoresist is respectively the same as the height of the subsequent material to be deposited, and after the deposition is finished, the redundant photoresist is removed by using a washing solution; the present invention is not particularly limited in this regard.
In the present invention, the conductive material is preferably the same as the selected planar metal material, and will not be described herein. The source of the conductive material is not particularly limited in the present invention, and commercially available products known to those skilled in the art may be used.
The present invention is not particularly limited in the kind and source of the washing liquid for washing off the first layer of the photoresist, and commercially available products well known to those skilled in the art may be used.
In the present invention, the deposition of a layer of semiconductor material is preferably performed by vapor deposition or atomic deposition; the thickness of the deposited layer of semiconductor material is preferably 5nm to 100nm, more preferably 30nm to 80 nm.
In the present invention, the semiconductor material is preferably an N-type semiconductor material or a P-type semiconductor material; wherein the N-type semiconductor material is preferably selected from TiO2Fullerene, graphene, SnO2And ZnO, more preferably fullerene or SnO2(ii) a The P-type semiconductor material is preferably selected from NiOx、Cu2One or more of O, CuI, PTAA and CuSCN, more preferably NiOx. The source of the semiconductor material is not particularly limited in the present invention, and commercially available products known to those skilled in the art may be used.
The kind and source of the washing liquid for washing off the second layer of photoresist are not particularly limited in the present invention, and commercially available products well known to those skilled in the art may be used.
In the present invention, the deposition of a layer of insulating layer material is preferably performed by vapor deposition or atomic deposition; the thickness of the deposited insulating layer material is preferably 5nm to 100nm, and more preferably 20nm to 90 nm.
In the present invention, the insulating layer material is preferably selected from SiO2、Si3N4Beryllium oxide, boron nitride, aluminum oxide and tin barium borate, and more preferably SiO2And/or Si3N4More preferably SiO2Or Si3N4. The source of the insulating layer material is not particularly limited in the present invention, and commercially available products known to those skilled in the art may be used.
After the columnar electrode structure is obtained, one end of the first current carrier transmission layer deposited on the obtained columnar electrode structure is immersed into a perovskite material solution for nucleation growth, and a microspherical perovskite structure is formed at the end; and preparing a TCO layer on the surface of the formed microspherical perovskite structure to obtain the perovskite solar cell.
In the present invention, the perovskite material solution is preferably prepared from a perovskite precursor material and an organic solvent. In the present invention, the perovskite precursor material is preferably PbI2、PbBr2Perovskite single crystal prepared from one or more of CsI, CsBr, FAI, MAI, MACl and MABr; the organic solvent is preferably selected from one or more of DMF (N, N-dimethylformamide), DMSO (dimethyl sulfoxide), DMPU (N, N-dimethylpropylurea), NMP (N-methyl-2-pyrrolidone), 2-ME (ethylene glycol methyl ether), ACN (acetonitrile) and GBL (γ -butyrolactone). The utility model is about the PbI2、PbBr2The sources of CsI, CsBr, FAI, MAI, MACl and MABr and the above organic solvents are not particularly limited, and commercially available products or self-products known to those skilled in the art may be used.
In the present invention, the conditions for the nucleation growth are preferably: baking heating or microwave heating, wherein the heating temperature is 80-200 ℃, more preferably baking heating, and the heating temperature is 100-150 ℃.
In the present invention, the spherical perovskite structure formed is the spherical perovskite layer described in the above technical scheme. In the present invention, the radius R of the spherical perovskite layer is preferably 300nm to 350 μm, and more preferably 400nm to 300 μm.
In the present invention, the TCO layer is preferably prepared by vapor deposition or plasma deposition; the thickness of the prepared TCO layer is preferably 0.1-30% of the radius R, more preferably 0.1-10%, and specifically comprises the following components: 100 nm-400 nm.
In a preferred embodiment of the present invention, the process of obtaining a perovskite solar cell preferably further comprises:
after the end part of the perovskite structure is formed into the microspherical perovskite structure, a second carrier transmission layer is firstly deposited on the surface of the formed microspherical perovskite structure, and then a TCO layer is prepared, so that the perovskite solar cell is obtained.
In the present invention, the second carrier transport layer is preferably deposited by vapor deposition or atomic deposition; the thickness of the deposited second carrier transport layer is preferably 5nm to 100nm, more preferably 30nm to 80 nm.
In the present invention, the second carrier transport layer is formed of a semiconductor material, and covers the spherical perovskite layer, and the TCO layer further covers the second carrier transport layer. In the present invention, the semiconductor material is the same as that described in the above technical solution, and is not described herein again.
In the present invention, the type of the second carrier transport layer is different from that of the first carrier transport layer, that is: if the first carrier transmission layer is an N-type transmission layer (formed by depositing an N-type semiconductor material), the second carrier transmission layer is a P-type transmission layer (formed by depositing a P-type semiconductor material); if the first carrier transport layer is a P-type transport layer (deposited from a P-type semiconductor material), the second carrier transport layer is an N-type transport layer (deposited from an N-type semiconductor material).
The preparation method provided by the utility model has the advantages of simple process, mild condition, easiness in control and wide application prospect.
The present invention provides a perovskite solar cell comprising: a spherical perovskite layer; a TCO layer coating the spherical perovskite layer; a columnar electrode structure which extends outwards from the sphere center to form a spherical perovskite layer and penetrates through the TCO layer; the columnar electrode structure consists of a metal electrode core layer, a first carrier transmission layer and an insulating layer, wherein the first carrier transmission layer and the insulating layer are arranged on the side face of the metal electrode core layer side by side; the first carrier transmission layer completely wraps the inside of the spherical perovskite layer, and the insulating layer completely separates the metal electrode core layer from the TCO layer. Compared with the prior art, the perovskite solar cell provided by the utility model adopts a specific structure and a connection relation to form a microspherical structure with a counter electrode, has no requirement on the angle of incident light, and can expand the application field of the perovskite solar cell; and the specific structure and the connection relation can realize better interaction, and the large-area perovskite battery formed by self-assembling the perovskite battery has high photoelectric conversion efficiency and wide application prospect.
In addition, the preparation method provided by the utility model has the advantages of simple process, mild condition, easiness in control and wide application prospect.
To further illustrate the present invention, the following examples are provided for illustration.
Example 1
(1) Preparing a columnar electrode structure:
depositing at least two layers of photoresist on the surface of a planar metal (copper) laminated structure (the thickness of each layer of photoresist is the same as the height of a subarea to be formed);
secondly, punching holes on the photoresist by laser, wherein the depth of the holes reaches the surface of the planar metal laminated structure;
thirdly, growing conductive materials (copper columns) in the holes by an electroplating method to form metal electrodes;
washing the first layer of photoresist with washing liquid, exposing the part of the columnar electrode structure where the first partition material is to be deposited, and depositing a layer of N-type semiconductor material (specifically fullerene) in a vapor deposition mode, wherein the thickness of the N-type semiconductor material is 60 nm;
fifthly, on the basis of the step IV, cleaning the second layer of photoresist by using a cleaning solution, exposing the part of the columnar electrode structure where the second partition material is to be deposited, and depositing a layer of insulating layer material (specifically SiO) by using an atomic deposition mode2) With a thickness of 60nm, giving an aspect ratio of 5: 1 columnar electrode structure with conductive performance.
(2) Preparing a microspherical structure with a counter electrode:
immersing one end of the semiconductor material deposited in the columnar electrode structure obtained in the step (1) into a perovskite material solution (perovskite material Cs)0.15FA0.85PbI3-xBrxSolvent DMF: DMSO ═ 9: 1, concentration 1M/L), taking out, baking and heating to 130 ℃ for nucleation growth, and forming a microspherical perovskite structure at the end part;
preparing a TCO layer on the surface of the formed microspherical perovskite structure by vapor deposition to obtain the perovskite solar cell.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a perovskite solar cell provided in an embodiment of the present invention; wherein, 1 is a metal electrode, 2 is an insulating layer, 3 is an N-type transmission layer, 4 is a spherical perovskite layer, and 5 is a TCO layer.
As shown in fig. 1, the TCO layer 5 covers the spherical perovskite layer 4, the columnar electrode structure extends from the center of the sphere to the outside to form the spherical perovskite layer 4 and penetrates through the TCO layer 5, and the insulating layer 2 is disposed on the portion of the metal electrode 1 contacting the TCO layer 5.
The radius R of the spherical perovskite layer 4 is 13 μm, and the thickness of the TCO layer 5 is 1.15% of the radius R, namely 150 nm; the diameter of the columnar electrode structure is 25 mu m; the thickness of the insulating layer 2 was 60 nm.
Example 2
(1) Preparing a columnar electrode structure:
depositing at least two layers of photoresist on the surface of a planar metal (silver) layered structure (the thickness of each layer of photoresist is the same as the height of a subarea to be formed);
secondly, punching holes on the photoresist by laser, wherein the depth of the holes reaches the surface of the planar metal laminated structure;
thirdly, growing a conductive material (silver column) in the hole by an electroplating method to form a metal electrode;
fourthly, washing off the first layer of photoresist by using washing liquid, then exposing the part of the columnar electrode structure where the first partition material is to be deposited, and then depositing a layer of P-type semiconductor material (specifically NiO) by adopting an atomic deposition modex) The thickness of the film is 30 nm;
fifthly, on the basis of the step IV, cleaning the second layer of photoresist by using a cleaning solution, exposing the part of the columnar electrode structure where the second partition material is to be deposited, and depositing a layer of insulating layer material (specifically Si) by using an atomic deposition mode3N4) With a thickness of 30nm, giving an aspect ratio of 4: 1 columnar electrode structure with conductive performance.
(2) Preparing a microspherical structure with a counter electrode:
immersing one end of the semiconductor material deposited in the columnar electrode structure obtained in the step (1) into a perovskite material solution (perovskite material Cs)0.05FA0.70MA0.25PbI3DMF solvent with the concentration of 1.2M/L), taking out, baking at 100 ℃ for nucleation growth, and forming a microspherical perovskite structure at the end part;
preparing a TCO layer on the surface of the formed microspherical perovskite structure by vapor deposition to obtain the perovskite solar cell.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a perovskite solar cell provided in an embodiment of the present invention; wherein, 1 is a metal electrode, 2 is an insulating layer, 3 is a P-type transmission layer, 4 is a spherical perovskite layer, and 5 is a TCO layer.
As shown in fig. 1, the TCO layer 5 covers the spherical perovskite layer 4, the columnar electrode structure extends from the center of the sphere to the outside to form the spherical perovskite layer 4 and penetrates through the TCO layer 5, and the insulating layer 2 is disposed on the portion of the metal electrode 1 contacting the TCO layer 5.
The radius R of the spherical perovskite layer 4 is 10.5 μm, and the thickness of the TCO layer 5 is 1.52% of the radius R, i.e. 160 nm; the diameter of the columnar electrode structure is 20 mu m; the thickness of the insulating layer 2 was 30 nm.
Example 3
The preparation process provided in example 1 was used with the difference that: after forming a microspherical perovskite structure at the end, a P-type semiconductor material (specifically NiO) is prepared on the surface of the formed microspherical perovskite structure by plasma depositionx) And preparing a TCO layer by vapor deposition to obtain the perovskite solar cell.
Example 4
The preparation process provided in example 2 was used with the difference that: after forming a microspherical perovskite structure at the end, firstly preparing an N-type semiconductor material (specifically fullerene) on the surface of the formed microspherical perovskite structure by vapor deposition, and then preparing a TCO layer by a plasma deposition method to obtain the perovskite solar cell.
The perovskite solar cell provided by the embodiments 1-4 of the utility model is self-assembled to form a large-area perovskite cell; through tests, the photoelectric conversion efficiency is respectively as follows: 11.6%, 10.7%, 13%, 12.5%.
In conclusion, the perovskite solar cell provided by the utility model is of a microspherical structure with a counter electrode, has no requirement on the angle of incident light, can expand the application field of the perovskite solar cell, and is high in photoelectric conversion efficiency and wide in application prospect.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the utility model. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (7)
1. A perovskite solar cell, comprising:
a spherical perovskite layer;
a TCO layer coating the spherical perovskite layer;
a columnar electrode structure which extends outwards from the sphere center to form a spherical perovskite layer and penetrates through the TCO layer;
the columnar electrode structure consists of a metal electrode core layer, a first carrier transmission layer and an insulating layer, wherein the first carrier transmission layer and the insulating layer are arranged on the side face of the metal electrode core layer side by side;
the first carrier transmission layer completely wraps the inside of the spherical perovskite layer, and the insulating layer completely separates the metal electrode core layer from the TCO layer.
2. The perovskite solar cell according to claim 1, wherein the spherical perovskite layer has a radius R of 300nm to 350 μ ι η.
3. The perovskite solar cell as claimed in claim 1, wherein the TCO layer has a thickness of 0.1% to 30% of the radius R.
4. The perovskite solar cell of claim 1, wherein the columnar electrode structure has a diameter of 100nm to 500 μm.
5. The perovskite solar cell of claim 1, wherein the thickness of the carrier transport layer is between 5nm and 100 nm.
6. The perovskite solar cell of claim 1, wherein the insulating layer has a thickness of 5nm to 100 nm.
7. The perovskite solar cell according to any one of claims 1 to 6, wherein a second carrier transport layer is further provided between the spherical perovskite layer and the TCO layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122197751.5U CN215896438U (en) | 2021-09-10 | 2021-09-10 | Perovskite solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122197751.5U CN215896438U (en) | 2021-09-10 | 2021-09-10 | Perovskite solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN215896438U true CN215896438U (en) | 2022-02-22 |
Family
ID=80336965
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202122197751.5U Active CN215896438U (en) | 2021-09-10 | 2021-09-10 | Perovskite solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN215896438U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113690372A (en) * | 2021-09-10 | 2021-11-23 | 华能新能源股份有限公司 | Perovskite solar cell and preparation method thereof |
-
2021
- 2021-09-10 CN CN202122197751.5U patent/CN215896438U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113690372A (en) * | 2021-09-10 | 2021-11-23 | 华能新能源股份有限公司 | Perovskite solar cell and preparation method thereof |
| CN113690372B (en) * | 2021-09-10 | 2024-05-28 | 华能新能源股份有限公司 | Perovskite solar cell and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Zhou et al. | Perovskite‐based solar cells: materials, methods, and future perspectives | |
| US10535791B2 (en) | 2-terminal metal halide semiconductor/C-silicon multijunction solar cell with tunnel junction | |
| CN107924933B (en) | Multi-junction photovoltaic device | |
| TWI631721B (en) | A high efficiency stacked solar cell | |
| KR101168227B1 (en) | Fabrication Method of Nanostructured Inorganic-Organic Heterojunction Solar Cells | |
| US20160218308A1 (en) | Photovoltaic device | |
| JP2013526003A (en) | All-solid heterojunction solar cell | |
| CN111081878A (en) | Perovskite/silicon-based heterojunction laminated solar cell and preparation method thereof | |
| CN112018209A (en) | Perovskite-silicon heterojunction laminated solar cell and manufacturing method thereof | |
| JP2024513065A (en) | Perovskite solar cells and tandem solar cells containing the same | |
| CN114256387A (en) | Preparation method of perovskite-heterojunction three-end MWT structure laminated solar cell | |
| CN113193125A (en) | Flexible perovskite solar cell with high power-to-mass ratio and preparation method thereof | |
| CN111816773A (en) | Perovskite solar cell, laminated cell solar cell, processing method and cell module | |
| CN215896438U (en) | Perovskite solar cell | |
| KR101794988B1 (en) | Preparation method of perovskite absorber layer and preparation method of solarcell applied thereby | |
| KR20210065446A (en) | Integrated tandem solar cell and manufacturing method thereof | |
| CN113690372B (en) | Perovskite solar cell and preparation method thereof | |
| KR101694803B1 (en) | Perovskite solar cells comprising metal nanowire as photoelectrode, and the preparation method thereof | |
| US20130042906A1 (en) | Quantum-dot sensitized solar cell | |
| CN102568867A (en) | Laminated thin film solar battery | |
| WO2023098038A1 (en) | Method for preparing columnar electrode structure of perovskite solar cell | |
| US20230019802A1 (en) | Solar cell | |
| Cao et al. | Numerical investigation of structural optimization and defect suppression for high-performance perovskite solar cells via SCAPS-1D | |
| US20240138163A1 (en) | Materials and Methods for Hole Transport Layers in Perovskite Photovoltaic Devices | |
| KR20190052981A (en) | Solar cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |