CN114334592A

CN114334592A - Pollutant particle collecting plate and ion implantation device

Info

Publication number: CN114334592A
Application number: CN202011061620.8A
Authority: CN
Inventors: 朴兴雨; 李河圣; 朱宁炳; 刘金彪; 刘青; 王垚; 张琦辉; 李琳
Original assignee: Institute of Microelectronics of CAS; Zhenxin Beijing Semiconductor Co Ltd
Current assignee: Institute of Microelectronics of CAS; Zhenxin Beijing Semiconductor Co Ltd
Priority date: 2020-09-30
Filing date: 2020-09-30
Publication date: 2022-04-12

Abstract

The utility model relates to the technical field of semiconductors, concretely relates to pollutant particle collecting plate and ion implantation device, the package rubbing board body, the plate body contains the graphite material, at least partial surface constitution of plate body is the cockscomb structure. The pollutant particle collecting plate can reduce the traveling speed of pollutant particles in an ion beam, and further collect the pollutant particles from the ion beam.

Description

Pollutant particle collecting plate and ion implantation device

Technical Field

The application relates to the technical field of semiconductors, in particular to a pollutant particle collecting plate and an ion implantation device.

Background

In the manufacture of semiconductor devices, ion implantation systems are used to dope semiconductor wafers or other workpieces with impurities. A typical ion implanter includes: an ion source for generating an ion beam; a beamline assembly comprising a mass analysis apparatus for mass resolving the ion beam using a magnetic field; and a target chamber containing a semiconductor wafer or workpiece to be implanted by the ion beam.

Operation of an Ion implanter or other Ion beam equipment (e.g., a linear accelerator) in a semiconductor Ion implantation (Ion implantation) process may result in the generation of contaminant particles from a variety of sources. Such contaminant particle sizes may be less than about 1 μm, for example, but may still have a deleterious effect on the implanted workpiece. For example, such contaminant particles may become entrained in the ion beam and flow with the beam into a Process Chamber (Process Chamber) for transport to the workpiece, thereby causing contamination of the wafer surface.

Disclosure of Invention

The present application addresses, at least to some extent, the above-mentioned technical problems in the related art. Therefore, the present application provides a contaminant particle collecting plate and an ion implantation apparatus to solve the above technical problems.

In order to achieve the above object, a first aspect of the present application provides a pollutant particle collecting plate, comprising a plate body, wherein the plate body comprises a graphite material, and at least part of the surface of the plate body is serrated.

A second aspect of the present application provides an ion implantation apparatus comprising a contaminant particle collecting plate as described above and a housing; the housing has an ion beam flowing space therein, and the collector plate is disposed in the ion beam flowing space.

Drawings

Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the application. Also, like reference numerals are used to refer to like parts throughout the drawings. In the drawings:

fig. 1 is a block diagram illustrating an ion implantation apparatus according to an embodiment of the present application;

FIG. 2 shows a top view of a contaminant particle collection plate in an embodiment of the present application;

FIG. 3 illustrates a cross-sectional view of a contaminant particle collection plate in one embodiment of the present application;

fig. 4 shows a partial enlarged view at a of fig. 3.

Detailed Description

Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. It should be understood that the description is illustrative only and is not intended to limit the scope of the present disclosure. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present disclosure.

Various structural schematics according to embodiments of the present disclosure are shown in the figures. The figures are not drawn to scale, wherein certain details are exaggerated and possibly omitted for clarity of presentation. The shapes of various regions, layers, and relative sizes and positional relationships therebetween shown in the drawings are merely exemplary, and deviations may occur in practice due to manufacturing tolerances or technical limitations, and a person skilled in the art may additionally design regions/layers having different shapes, sizes, relative positions, as actually required.

In the context of the present disclosure, when a layer/element is referred to as being "on" another layer/element, it can be directly on the other layer/element or intervening layers/elements may be present. In addition, if a layer/element is "on" another layer/element in one orientation, then that layer/element may be "under" the other layer/element when the orientation is reversed.

Referring now to the drawings, fig. 1 is a simplified perspective view illustrating an exemplary ion implantation apparatus 100. It should be noted that the ion implantation apparatus 100 of fig. 1 is described herein only for a better understanding of the present invention and, therefore, is not necessarily drawn to scale. Accordingly, various components may or may not be depicted for clarity.

As shown in fig. 1, the ion implantation apparatus 100 in the present embodiment includes a housing 10, an ion source 11, a mass analyzer 12, an accelerator 13, a processing chamber 14, and a collecting plate 15, wherein the ion source 11 is configured to generate an ion beam, the collecting plate 15 is configured to collect contaminant particles in the ion beam, the ion source 11 is mounted outside the housing 10, the mass analyzer 12, the accelerator 13, and the processing chamber 14 are mounted in the housing 10, the mass analyzer 12 is coupled to the ion source 11 and configured to analyze the ion beam of the ion source 11, the accelerator 13 is coupled to the mass analyzer 12 and configured to control a flow velocity of the ion beam to ensure that the ion beam can penetrate into a semiconductor substrate in the processing chamber 14, the processing chamber 14 is configured to receive the ion beam in the accelerator 13, and in the present embodiment, the collecting plate 15 is detachably disposed in the processing chamber 14.

It is noted that the material of the collecting plate 15 may comprise a non-metallic, electrically conductive material, such as graphite.

In other embodiments of the invention, a collection plate 15 may also be disposed between the mass analyzer 12 and the process chamber 14.

Specifically, the ion beam enters the mass analyzer 12 from the ion source 11 via an entrance of the mass analyzer 12; and the mass analyzer 12 starts dividing the ion beam according to the molecular weight of the elements constituting the ion beam. The mass analyzer 12 is operable to extract selected rays or beams of a selected element (e.g., boron) from the ion beam, wherein ions of the selected beam are desirably implanted into a workpiece (e.g., a semiconductor substrate) disposed in the process chamber 14.

As shown in fig. 2 to 4, the collecting plate 15 includes: the plate body comprises a first surface 150 and a second surface 151 opposite to the first surface 150, wherein a plurality of protrusions 152 are arranged on the first surface 150, and the plurality of protrusions 152 are connected with each other to form a saw-tooth shape.

In the present embodiment, for each tooth-shaped protrusion 152 of the serrated surface, each protrusion 152 has a first serrated surface 153 and a second serrated surface 154, wherein the included angle between the first serrated surface 153 and the second serrated surface 154 is 30 ° to 80 °.

Further, the first tooth surface 153 is disposed perpendicular to the first surface 150.

It is worth mentioning that the distance a between the salient point of the protrusion 152 and the second surface 151 is 10-15 mm. The height b of the protrusions 152 is 3-5 mm.

The first toothed surface 153 intersects the first surface 150 to form a first intersection point, the second toothed surface 154 intersects the first surface 150 to form a second intersection point, and the distance c between the first and second intersection points is 3-5 mm.

It is worth mentioning that the ion beam is processed by the collecting plate 15, so that the traveling speed of the contaminant particles in the ion beam can be reduced, and the contaminant particles can be collected from the ion beam.

In the above description, the technical details of patterning, etching, and the like of each layer are not described in detail. It will be appreciated by those skilled in the art that layers, regions, etc. of the desired shape may be formed by various technical means. In addition, in order to form the same structure, those skilled in the art can also design a method which is not exactly the same as the method described above. In addition, although the embodiments are described separately above, this does not mean that the measures in the embodiments cannot be used in advantageous combination.

The embodiments of the present disclosure have been described above. However, these examples are for illustrative purposes only and are not intended to limit the scope of the present disclosure. The scope of the disclosure is defined by the appended claims and equivalents thereof. Various alternatives and modifications can be devised by those skilled in the art without departing from the scope of the present disclosure, and such alternatives and modifications are intended to be within the scope of the present disclosure.

Claims

1. A contaminant particle collection sheet, comprising: the plate body comprises a graphite material, and at least part of the surface of the plate body is in a sawtooth shape.

2. The contaminant particle collection plate of claim 1, wherein the plate body has a first surface and a second surface disposed opposite the first surface, the serrations formed on the first surface and comprising, for each of the serrated surfaces, a first serrated surface and a second serrated surface, wherein the first serrated surface and the second serrated surface are angled at an angle of 30 ° -80 °.

3. The contaminant particle collection sheet of claim 2, wherein the first toothed surface is disposed perpendicular to the first surface.

4. The contaminant particle collection sheet of claim 3, wherein the raised projections are spaced from the second surface by a distance of 10-15 mm.

5. The contaminant particle collection sheet of claim 4, wherein the projections have a height of from 3 to 5 mm.

6. The contaminant particle collection plate of claim 5, wherein the first toothed surface intersects the first surface to form a first intersection point, the second toothed surface intersects the first surface to form a second intersection point, and the distance between the first intersection point and the second intersection point is 3-5 mm.

7. An ion implantation apparatus comprising the contaminant particle collection plate of any of claims 1-6 and a housing; the housing has an ion beam flowing space therein, and the collector plate is disposed in the ion beam flowing space.

8. The ion implantation device according to claim 7, further comprising:

an ion source for generating an ion beam;

a mass analyzer coupled to the ion source for analyzing the ion beam;

a process chamber receiving the ion beam;

wherein the ion source is mounted outside a housing, the mass analyzer and process chamber being mounted within the housing; the collecting plate is arranged in the processing chamber; or

The collection plate is disposed between the mass analyzer and the process chamber.

9. The ion implantation apparatus of claim 7, wherein the collector plate is removably disposed within the ion beam flow space.