CN114318216A - High-bonding-force optical film of diamond crystal and preparation method thereof - Google Patents
High-bonding-force optical film of diamond crystal and preparation method thereof Download PDFInfo
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- CN114318216A CN114318216A CN202111476850.5A CN202111476850A CN114318216A CN 114318216 A CN114318216 A CN 114318216A CN 202111476850 A CN202111476850 A CN 202111476850A CN 114318216 A CN114318216 A CN 114318216A
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- 239000010432 diamond Substances 0.000 title claims abstract description 152
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 152
- 239000013078 crystal Substances 0.000 title claims abstract description 144
- 239000012788 optical film Substances 0.000 title claims abstract description 31
- 238000002360 preparation method Methods 0.000 title abstract description 16
- 239000010408 film Substances 0.000 claims abstract description 136
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 91
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 91
- 239000010703 silicon Substances 0.000 claims abstract description 91
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 49
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 48
- 238000007747 plating Methods 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims description 38
- 230000003287 optical effect Effects 0.000 claims description 31
- 239000010409 thin film Substances 0.000 claims description 31
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 238000005498 polishing Methods 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 6
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 6
- 238000001659 ion-beam spectroscopy Methods 0.000 claims description 6
- 238000003892 spreading Methods 0.000 claims description 6
- 238000005566 electron beam evaporation Methods 0.000 claims description 5
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 4
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 239000000126 substance Substances 0.000 abstract description 5
- 238000005411 Van der Waals force Methods 0.000 abstract description 3
- 239000011248 coating agent Substances 0.000 description 32
- 238000000576 coating method Methods 0.000 description 32
- 238000010586 diagram Methods 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 239000007888 film coating Substances 0.000 description 8
- 238000009501 film coating Methods 0.000 description 8
- 238000001069 Raman spectroscopy Methods 0.000 description 4
- 239000002210 silicon-based material Substances 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- 239000000203 mixture Substances 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000003380 quartz crystal microbalance Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
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Abstract
The invention provides a high-bonding-force optical film of diamond crystals and a preparation method thereof, wherein the preparation method of the high-bonding-force optical film of the diamond crystals comprises the following steps: placing the diamond crystal in a vacuum chamber, and enabling the surface of the diamond crystal to reach a preset temperature, wherein the preset temperature is 200-1000 ℃; a silicon layer is flatly laid on the surface of the diamond crystal to form a film system structure, and a silicon carbide layer is formed at the contact interface of the silicon layer and the diamond crystal in the film system structure; plating a target film layer on the surface of the film system structure to form the high-bonding-force optical film of the diamond crystal. The high-bonding-force optical film of the diamond crystal and the preparation method thereof provided by the embodiment of the invention can change the bonding force of a film system from Van der Waals force to the bonding force of a chemical bond, improve the surface bonding force of the film system, improve the stability and damage resistance of the film system and relieve the problem of easy falling.
Description
The invention relates to the technical field of coating, in particular to a high-bonding-force optical film of diamond crystals and a preparation method thereof.
Background
The raman laser technology has the characteristics of beam quality optimization effect, pulse compression effect, narrow linewidth output and the like, and is an important technology for realizing laser wavelength expansion. The diamond crystal has the advantages of wide light transmission range, high thermal conductivity and large Raman frequency shift coefficient, and is an important direction for researching the Raman laser technology in recent years.
The diamond crystal structure is stable and has no dangling bond, which causes the prior coating technology to have great difficulty, unstable coating system, low damage resistance and easy falling off, and is one of the important technical problems to be solved by the diamond Raman laser technology.
Disclosure of Invention
Technical problem to be solved
The invention provides a high-bonding-force optical thin film of diamond crystals and a preparation method thereof, and aims to solve the technical problems of high difficulty, unstable film system, low damage resistance and easy falling of the existing diamond crystal film coating technology.
(II) technical scheme
The invention provides a high-bonding-force optical thin film of diamond crystals and a preparation method thereof, and aims to solve the problems of high difficulty, unstable film system, low damage resistance and easy falling of the existing diamond film coating technology.
In one aspect, the present invention provides a method for preparing a high-bonding-force optical thin film of diamond crystals, comprising: placing diamond crystals in a vacuum chamber, and enabling the surface of the diamond crystals to reach a preset temperature, wherein the preset temperature is 200-1000 ℃; spreading a silicon layer on the surface of the diamond crystal to form a film system structure, wherein a silicon carbide layer is formed at the interface where the silicon layer is contacted with the diamond crystal in the film system structure; plating a target film layer on the surface of the film system structure to form the high-bonding-force optical film of the diamond crystal.
Optionally, in the step of spreading the silicon layer on the surface of the diamond crystal to form the film structure, 1 to 5 layers of silicon layers are spread.
Optionally, the thickness of the silicon layer laid on the surface of the diamond crystal is 0.1 nm-10 nm.
Optionally, before plating the target film layer, the surface of the film system structure is subjected to polishing treatment.
Optionally, the film-system structure is cooled to a room temperature state before the polishing treatment is performed.
Optionally, in the step of spreading a silicon layer on the surface of the diamond crystal to form a film structure, the silicon layer and the diamond crystal are completely reacted to form a silicon carbide layer; in the high-bonding-force optical thin film of diamond crystal, the thickness of the silicon carbide layer is
Optionally, in the step of forming a film system structure by spreading a silicon layer on the surface of the diamond crystal, a part of the silicon layer reacts with the diamond to form a silicon carbide layer; in the high-bonding-force optical thin film of diamond crystal, the thickness of the silicon carbide layer is
The silicon layer has a thickness of
Optionally, in the step of forming the film structure by spreading the silicon layer on the surface of the diamond crystal, the silicon layer is spread by an ion beam sputtering or electron beam evaporation process.
Optionally, the target film layer is any one of a silicon oxide film, a tantalum oxide film, and a hafnium oxide.
In another aspect, the present invention further provides a high-bonding-force optical film of diamond crystals, which is prepared by the method for preparing a high-bonding-force optical film of diamond crystals according to any one of the above embodiments.
(III) advantageous effects
The invention provides a high-bonding-force optical thin film of diamond crystals and a preparation method thereof. Compared with the prior art that a target film layer is directly plated on the diamond crystal, the high-bonding-force optical film of the diamond crystal and the preparation method thereof can change the bonding force of a film system from Van der Waals force to the bonding force of the chemical bond, improve the surface bonding force of the film system, improve the stability and damage resistance of the film system and relieve the problem of easy falling.
Drawings
FIG. 1 is a flow chart of a method for manufacturing a high-bonding-force optical thin film of diamond crystals according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a high bonding force optical film of diamond crystals according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of another diamond crystal high bonding force optical film according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a structure of yet another high bonding force optical film of diamond crystals according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram of a film coating apparatus according to an embodiment of the present invention.
Reference numerals:
11-vacuum chamber, 12-objective table, 13-film tray, 14-pre-laying temperature controller, 15-thickness controller, 16-silicon material, 21-diamond crystal, 22-silicon layer, 23-silicon carbide layer and 24-target film layer.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
A high-bonding-force optical film of diamond crystals and a method for manufacturing the same according to an embodiment of the present invention will be described in detail with reference to fig. 1 to 5.
In one aspect, the present invention provides a method for manufacturing a high-bonding-force optical thin film of diamond crystals, please refer to fig. 1, where fig. 1 is a flowchart of a method for manufacturing a high-bonding-force optical thin film of diamond crystals according to an embodiment of the present invention, and the method includes the following steps:
And step 300, plating a target film layer on the surface of the film system structure to form a film structure based on diamond crystals.
In this step 300, specifically, the step of plating the target film layer 24 is performed on the surface of the film system structure on the side away from the diamond crystal 21, that is, the surface of the completely-tiled silicon layer 22. Step 300 may be performed in the same coating apparatus as step 100, or may be performed in a different coating apparatus, which is not limited in the present invention.
In the embodiment, the silicon layer is tiled on the surface of the diamond crystal 21, the tiled silicon layer and the diamond crystal 21 react at the contact interface to form the silicon carbide layer 23, so that the bonding force between the silicon carbide layer and the diamond crystal is enhanced, and because the silicon layer is tiled, a dangling bond is formed on the surface of the film system structure, and the target film layer 24 is formed on the surface of the tiled silicon layer 22 of the film system structure, so that the bonding force between the film system structure and the target film layer 24 is enhanced. The high-bonding-force optical film of the diamond crystal and the preparation method thereof provided by the embodiment of the invention can change the bonding force of a film system from Van der Waals force to the bonding force of a chemical bond, improve the surface bonding force of the film system, improve the stability and damage resistance of the film system and relieve the problem of easy falling.
In some embodiments, in step 200, the tiled silicon layer may be tiled 1-5 silicon layers layer by layer on the set surface of the diamond crystal by an ion beam sputtering or electron beam evaporation process, and the total thickness of the tiled silicon layers may be 0.1 mm-10 mm. The silicon layers laid one on top of the other form chemical bonds at the interface with the diamond crystals 21 under high temperature conditions, resulting in a silicon carbide layer 23. Thus, the diamond crystal 21 is combined with the tiled silicon layer through chemical bonds, and a suspended bond is formed on the surface of the formed film system structure, which is far away from the diamond crystal 21, so that the film system structure is convenient to combine with a subsequent coating film, and the bonding force between film layers is improved.
In some embodiments, the tiled silicon layer may completely react with the diamond crystal 21 to form the silicon carbide layer 23. in other embodiments, an excess of silicon layer may be tiled over the surface of the diamond crystal 21, such that a portion of the tiled silicon layer reacts with the diamond crystal 21 to form the silicon carbide layer 23 and an unreacted silicon layer is formed on the silicon carbide layer 23.
In step 300, a corresponding target film layer 24 may be plated on the surface of the film system structure according to actual requirements, and the target film layer 24 may be any one of a silicon oxide film, a tantalum oxide film and a hafnium oxide film, so that the formed diamond film system structure may be used as a high-power laser lens. The step 300 may be performed in the same coating apparatus as the steps 100 and 200, or may be performed in another coating apparatus. If the step 300, the step 100 and the step 200 are performed in the same chamber of the same coating device and only one coating material tray for containing the raw material for coating is provided, the raw material for coating needs to be replaced, or a plurality of different coating material trays for storing different coating materials can be arranged in the coating device. If the process of plating the target film layer can be performed in a different chamber from the process of steps 100 and 200, the target film layer is transferred to the plating apparatus for plating the target film layer 24 to perform step 300 after the film structure is cooled to room temperature.
Before plating the target film layer 24, the surface of the film system structure may be polished to enhance the bonding force with the target film layer 24. Specifically, the film system structure can be cooled to room temperature and then taken out of the coating device, so as to prevent the high-temperature film system structure from reacting with gas in the air under the high-temperature condition after directly contacting with the air, and further influence the subsequent coating. The film structure is then polished and then plated with the target film layer 24. After the polishing treatment, the surface of the film structure may be the silicon carbide layer 23 or the silicon layer 24 or a mixture of the silicon layer 23 and the silicon carbide layer 24, depending on the amount of wear, and then the target film layer 24 is plated on the polished surface. After the target film layer 24 is plated on the surface of the film system structure, the bonding force between the target film layer 24 and the diamond crystal 21 can be enhanced by the silicon carbide layer 23 and/or the silicon layer 22. The resulting diamond crystal-based film structure is shown in fig. 2, 3 and 4. Fig. 2 is a schematic structural diagram of a high-bonding-force optical film of diamond crystals according to an embodiment of the present invention, fig. 3 is a schematic structural diagram of a high-bonding-force optical film of another diamond crystal according to an embodiment of the present invention, and fig. 4 is a schematic structural diagram of a high-bonding-force optical film of another diamond crystal according to an embodiment of the present invention. In FIG. 2, the tiled silicon layer completely reacts with the diamond crystal 21 to form a silicon carbide layer 23, and after polishing, a target film layer 24 is formed on the silicon carbide layer, which film layer 23 has a film structure in which the thickness of the silicon carbide layer 23 is set to
The thickness of the formed silicon carbide layer 23 is within this range, and the hardness and the thermal conductivity of the film system can be ensured; in FIG. 3, the portion of the silicon layer laid flat reacts with the diamond crystal 21 to form a silicon carbide layer 23 at the interface where the diamond crystal 21 and the silicon layer are in contact, and after polishing, the surface of the silicon carbide layer is polishedThe silicon layer 22 and the silicon carbide layer 23 exist simultaneously on the surface, the structure of the target film layer 24 is formed on the mixed surface of the silicon layer 22 and the silicon carbide layer 23, and the total thickness of the formed silicon carbide layer 23 and the mixed surface of the silicon layer 22 and the silicon carbide layer 23 may be set to be
In fig. 4, the tiled silicon layer portion reacts with the diamond crystal 21 to form a silicon carbide layer 23 at the interface where the diamond crystal 21 and the silicon layer are in contact, and after the polishing treatment, only the silicon layer 22 exists on the polished surface, and a target film layer 24 is formed on the surface of the silicon layer 22. In the film-system structure, the silicon carbide layer 23 is formed to a thickness of
The silicon layer 22 formed on the silicon carbide 23 has a thickness of
The invention is not limited to the coating device for implementing the preparation method of the high-bonding-force optical thin film of the diamond crystal, and the existing coating device can be adopted. Referring to fig. 5, fig. 5 is a schematic structural diagram of a coating apparatus according to an embodiment of the present invention, which may include a vacuum chamber 11, a pre-paving temperature controller 14 and a coating material tray 13 located in the vacuum chamber 11. The vacuum chamber 11 provides a vacuum environment for coating; the pre-paving temperature controller 14 can detect the temperature of the vacuum chamber 11 and the surface of the diamond crystal 21 and regulate and control the temperature of the vacuum chamber 11; the film tray 13 contains a raw material for film coating such as silicon powder. The coating device can also comprise a thickness controller 15, an object stage 12 and the like. The thickness controller 15 is used for detecting the thickness of the silicon layer tiled on the surface of the diamond crystal 21 and regulating and controlling the thickness and the speed of the tiled silicon layer, and the thickness can be measured by a photoelectric extreme value method or a quartz crystal micro-balance method; stage 12 may hold diamond crystal 21.
It should be noted that fig. 5 only shows the structure of the coating apparatus by way of example, but not as a limitation to the method for manufacturing the high-bonding-force optical thin film of diamond crystals according to the embodiment of the present invention. The preparation method can also be carried out in coating devices with other structures.
Specifically, in the process of performing step 100 described above, after fixing diamond crystal 21 to stage 12, vacuum chamber 11 is heated by pre-stage temperature controller 14, and the temperature in vacuum chamber 11 and the temperature of the surface of diamond crystal 21 are detected in real time, and the temperature in vacuum chamber 11 is controlled. The temperature of the surface of the diamond crystal 21 is made to meet the set requirement. After the surface of the diamond crystal 21 reaches the preset temperature, step 200 is performed, a silicon layer is tiled on the surface of the diamond crystal 21, in the tiling process, the thickness of the silicon layer tiled on the surface of the diamond crystal 21 is detected in real time through the thickness controller 15, and the tiling thickness and speed of the silicon layer are regulated and controlled. For example, the tiling of the silicon layers may be stopped after detecting that the thickness meets a set requirement.
The step 300 may be performed in the coating apparatus, or may be performed in another coating apparatus. If step 300 is performed in the same chamber as steps 100 and 200, the material in the film tray 13 needs to be replaced, or a plurality of different film trays 13 are arranged in the film coating device to store different coating materials. The invention is not limited thereto.
On the other hand, the invention also provides a diamond crystal high-bonding-force optical film which is prepared by the preparation method of the diamond crystal high-bonding-force optical film in any embodiment. The structure of which is shown in fig. 2, 3 and 4. Fig. 2 is a schematic structural diagram of a high-bonding-force optical film of diamond crystals according to an embodiment of the present invention, fig. 3 is a schematic structural diagram of a high-bonding-force optical film of another diamond crystal according to an embodiment of the present invention, and fig. 4 is a schematic structural diagram of a high-bonding-force optical film of another diamond crystal according to an embodiment of the present invention. The high-bonding-force optical thin film of diamond crystals shown in fig. 2 includes a diamond crystal 21, a silicon carbide layer 23, and a target film layer 24, which are sequentially stacked. The high-bonding-force optical thin film of diamond crystals shown in fig. 3 includes a diamond crystal 21, a mixed layer of a silicon layer 22 and a silicon carbide layer 23, and a target film layer 24, which are sequentially stacked. The high-bonding-force optical thin film of diamond crystals shown in fig. 4 includes a diamond crystal 21, a silicon layer 22, a silicon carbide layer 23, and a target film layer 24, which are sequentially stacked. The high-bonding-force optical thin film of the diamond crystal of the above embodiment has the beneficial effects, and is not described in detail herein.
The high bonding force optical thin film of diamond crystals and the method for manufacturing the same according to the present invention will be described in detail with reference to several embodiments.
Example 1
In this embodiment, the method for preparing the high-bonding-force optical thin film of diamond crystals includes the following steps:
the diamond crystal 21 is placed in a vacuum chamber 11 of a coating device and fixed on an objective table 12, the working temperature is controlled to be 200 ℃ by a pre-paving temperature controller 12, the value of a pre-paving silicon layer of a thickness controller 15 is set to be 0.1nm, the required silicon material is provided by a film material tray 13, and 1 silicon layer is paved on the surface of the diamond crystal 21 by adopting an ion beam sputtering technology to form a film system structure. In this process, the thickness controller 15 detects the thickness of the tiled silicon layer and feeds back to the thickness controller 15, and when the thickness of the tiled silicon layer is 0.1nm, the silicon layer laying is stopped. In this process, the interface where the diamond crystal 21 contacts the tiled silicon layer forms a silicon carbide layer 23, and the tiled silicon layer reacts completely with the diamond crystal 21 to form the silicon carbide layer 23.
After the film system structure formed as described above was cooled to room temperature, the surface of the film system structure was polished to a thickness of about 23 a
Then the polished film system structure is arranged in another film coating device, and the surface of the film system structure, which is far away from the diamond crystal 21, is coated with SiO2Coating the surface of the silicon carbide layer 23 with a film layer, i.e. SiO2And a film layer, which forms the high-bonding-force optical film of the diamond crystal. The film has stable structure, high damage threshold and SiO2The film is not easy to fall off.
Example 2
In this embodiment, the method for preparing the high-bonding-force optical thin film of diamond crystals includes the following steps:
the diamond crystal 21 is placed in a vacuum chamber 11 of a coating device and fixed on an objective table 12, the working temperature is controlled to be 700 ℃ by a pre-paving temperature controller 12, the value of a pre-paving silicon layer of a thickness controller 15 is set to be 3nm, the required silicon material is provided by a film material tray 13, and 3 silicon layers are paved on the surface of the diamond crystal 21 by adopting an electron beam evaporation technology to form a film system structure. In this process, the thickness of the tiled silicon layer is detected by the thickness controller 15 and fed back to the thickness controller 15, and when the thickness of the tiled silicon layer is 3nm, the silicon layer laying is stopped. In this process, the interface of the diamond crystal 21 in contact with the tiled silicon layer forms a silicon carbide layer 23, and the tiled silicon layer reacts with the diamond crystal portion to form the silicon carbide layer 23.
After the film system structure formed as described above was cooled to room temperature, the surface of the film system structure was polished to a thickness of about 23 a
The thickness of the silicon layer 22 on the silicon carbide layer 23 is about
The silicon carbide layer 23 and the silicon layer 22 are present on the surface of the film structure. And then the film system structure is arranged in another film coating device, and a hafnium oxide film layer is plated on the surface of the film system structure, which is far away from the diamond crystal 21, namely the surface of the mixed silicon carbide layer 23 and the silicon layer 22, so as to form the high-bonding-force optical film of the diamond crystal. The film has stable structure and high damage threshold, and the hafnium oxide film is not easy to fall off.
Example 3
In this embodiment, the method for preparing the high-bonding-force optical thin film of diamond crystals includes the following steps:
the diamond crystal 21 is placed in a vacuum chamber 11 of a coating device and fixed on a carrying table 12, the working temperature is controlled to be 1000 ℃ by a pre-paving temperature controller 14, the value of a pre-paving silicon layer of a thickness controller 15 is set to be 10nm, the required silicon material is provided by a film material tray 13, and 5 silicon layers are paved on the surface of the diamond crystal 21 by adopting an ion beam sputtering technology to form a film system structure. In this process, the thickness of the tiled silicon layer is detected by the thickness controller 15 and fed back to the thickness controller 15, and when the thickness of the tiled silicon layer is 10nm, the silicon layer laying is stopped. In this process, the interface of the diamond crystal 21 in contact with the tiled silicon layer forms a silicon carbide layer 23, and the tiled silicon layer partially reacts with the diamond crystal 21 to form the silicon carbide layer 23.
After the film system structure formed as described above was cooled to room temperature, the surface of the film system structure was polished to a thickness of about 23 a
The thickness of the silicon layer 22 on the silicon carbide layer 23 is about
And then the film system structure is placed in another film coating device, and a tantalum oxide film layer is plated on the surface of the film system structure, which is far away from the diamond crystal 21, namely the surface of the silicon layer 22, so that the high-bonding-force optical film of the diamond crystal is formed, the film structure is stable, the damage threshold is high, and the hafnium oxide film is not easy to fall off.
In the above embodiments, after the high-bonding-force optical thin film forming diamond crystals is prepared, the high-bonding-force film may be inspected to determine the structure and composition of each film layer.
In the prior art, the surface of diamond crystal is directly coated with a target film layer, for example, SiO is coated on the surface of diamond by ion beam sputtering technique or electron beam evaporation technique2Film-formed diamond-based films, the inventors conducted the same destructive test (scratch test, sticking of target film layer with tape, etc.) in comparison with the high bonding force of diamond crystal-based films prepared by the preparation method of the embodiments of the present invention, and found that the target film layer on the surface of diamond crystal of the prior art is easily peeled off, whereas the target film layer on the surface of diamond crystal of the present invention is not easily peeled off. The film prepared by the preparation method of the high-bonding-force optical film of the diamond crystal has higher bonding force.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can change the technical scheme of the present invention and the inventive concept within the technical scope of the present invention, and the technical scheme and the inventive concept thereof should be covered by the present invention.
Claims (10)
1. A method for preparing a high-bonding-force optical thin film of diamond crystals is characterized by comprising the following steps:
placing diamond crystals in a vacuum chamber, and enabling the surface of the diamond crystals to reach a preset temperature, wherein the preset temperature is 500-1000 ℃;
spreading a silicon layer on the surface of the diamond crystal to form a film system structure, wherein a silicon carbide layer is formed at the interface where the silicon layer is contacted with the diamond crystal in the film system structure;
plating a target film layer on the surface of the film system structure to form the high-bonding-force optical film of the diamond crystal.
2. The method for preparing a high-bonding-force optical thin film of diamond crystals according to claim 1, wherein in the step of forming the film structure by laying silicon layers on the surface of the diamond crystals, 1 to 5 silicon layers are laid.
3. The method for preparing a high-bonding-force optical thin film of diamond crystals according to claim 2, wherein the thickness of the silicon layer laid on the surface of the diamond crystals is 0.1nm to 10 nm.
4. The method for manufacturing a high bonding force optical thin film of diamond crystals according to any one of claims 1 to 3, wherein the surface of the film system structure is polished before plating the target film layer.
5. The method for manufacturing a high-bonding-force optical thin film of diamond crystals according to claim 4, wherein the film system structure is cooled to a room temperature state before the polishing treatment is performed.
6. The method for preparing a high-bonding-force optical thin film of diamond crystal according to claim 4, wherein in the step of forming the film system structure by laying a silicon layer on the surface of the diamond crystal, the silicon layer and the diamond crystal are completely reacted to form a silicon carbide layer;
in the high-bonding-force optical thin film of diamond crystal, the thickness of the silicon carbide layer is
7. The method for preparing a high-bonding-force optical thin film of diamond crystal according to claim 4, wherein in the step of forming a film system structure by laying a silicon layer on the surface of the diamond crystal, a part of the silicon layer reacts with the diamond to form a silicon carbide layer;
in the high-bonding-force optical thin film of diamond crystal, the thickness of the silicon carbide layer is
The silicon layer has a thickness of
8. The method for preparing a high bonding force optical thin film of diamond crystal according to claim 1, wherein the step of forming a film system structure by laying a silicon layer on the surface of the diamond crystal, the silicon layer is laid by ion beam sputtering or electron beam evaporation.
9. The method for manufacturing a high-bonding-force optical thin film of diamond crystal according to claim 1, wherein the target film layer is any one of a silicon oxide film, a tantalum oxide film and a hafnium oxide film.
10. A diamond crystal high-bonding-force optical film prepared by the method for preparing a diamond crystal high-bonding-force optical film according to any one of claims 1 to 9.
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| CN114318216B (en) | 2023-11-14 |
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