CN110698202A - Diamond-silicon carbide composite material and preparation method and application thereof - Google Patents
Diamond-silicon carbide composite material and preparation method and application thereof Download PDFInfo
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Abstract
The invention relates to a diamond-silicon carbide composite material and a preparation method and application thereof. The preparation method comprises the following steps of (10-80): (5-20): (5-20): (20-60) the diamond, the graphite, the silicon powder and the binder are used as raw materials and are compounded to form the diamond-silicon carbide composite material with good heat dissipation performance. In the preparation method, diamond, graphite, first silicon powder and a binder are mixed to obtain a mixture; then carrying out selective laser sintering treatment on the obtained mixture to obtain a blank; and then, in a vacuum environment, the blank body is contacted with second silicon powder to carry out infiltration treatment. The selective laser sintering can well control the size, shape, aperture size, aperture distribution and the like of the blank, and can realize the customized production of the diamond-silicon carbide composite material according to the design requirement. After the diamond-silicon carbide composite material is obtained, the composite material can be shaped near net without further complex processing.
Description
Technical Field
The invention relates to the technical field of composite materials, in particular to a diamond-silicon carbide composite material and a preparation method and application thereof.
Background
With the continuous progress of production technology, the speed of electronic products becoming old and new is gradually increased. In the process of updating electronic products, the integration degree of electronic devices inside the electronic products is higher and higher, and the design and layout of the electronic devices are changed from simple two-dimensional arrangement to complex and changeable three-dimensional distribution. In the process of this transition, the heat dissipation problem of the electronic product becomes one of the bottlenecks that restrict the transition from further speeding up. With the improvement of the integration degree of electronic devices in electronic products, the requirement on the heat dissipation performance of heat dissipation materials is higher and higher; meanwhile, in order to achieve better assembly, higher requirements are also placed on the size, shape and the like of the heat dissipation material. However, the heat dissipation material obtained by the conventional preparation method has poor heat dissipation performance, and it is difficult to effectively control the size, shape, etc. of the heat dissipation material, and after the heat dissipation material is obtained, complicated post-treatment is required to make the heat dissipation material meet the use requirements.
Disclosure of Invention
Based on the above, there is a need for a method for preparing a diamond-silicon carbide composite material, which has good heat dissipation performance; meanwhile, the size, the shape and the like of the diamond-silicon carbide composite material can be effectively controlled in the preparation process, and the near-net forming of the composite material can be realized.
A preparation method of a diamond-silicon carbide composite material comprises the following steps:
diamond, graphite, silicon powder and a binder are mixed according to the mass ratio (10-80): (5-20): (5-20): (20-60) preparing materials;
dividing the silicon powder into a first silicon powder and a second silicon powder;
mixing the diamond, the graphite, the first silicon powder and the binder to obtain a mixture;
carrying out selective laser sintering treatment on the mixture to obtain a green body;
carrying out infiltration treatment on the green body and the second silicon powder in a vacuum environment;
in one embodiment, the mass ratio of the first silicon powder to the second silicon powder is 10: (50-80).
In one embodiment, the diamond has a particle size of 500-60 meshes, the silicon powder has a particle size of 500-200 meshes, and the graphite has a particle size of 800-180 meshes.
In one embodiment, the diamond is at least one of single crystal diamond and polycrystalline diamond; and/or the presence of a gas in the gas,
the purity of the silicon powder is not lower than 99.96%; and/or the presence of a gas in the gas,
the binder is one or more of phenolic resin, epoxy resin and water glass.
In one embodiment, the laser power for carrying out the selective laser sintering treatment on the mixture is 20W-30W, the scanning speed is 600 mm/s-1000 mm/s, the scanning interval is 0.04 mm-0.08 mm, and the powder spreading thickness of each layer is 0.06 mm-0.12 mm.
In one embodiment, the preparation method of the diamond-silicon carbide composite material further comprises the step of degreasing the blank before the infiltration treatment of the blank and the second silicon powder.
In one embodiment, the degreasing method comprises the following steps: degreasing the blank body for 15-25 h at 1000-1300 ℃ in protective gas.
In one embodiment, the blank is covered above the second silicon powder in a vacuum environment, and then infiltration treatment is performed; and/or the presence of a gas in the gas,
the vacuum degree of the vacuum environment is 0.5 MPa-1 MP; and/or the presence of a gas in the gas,
the temperature of the infiltration treatment is 1500-1650 ℃, and the infiltration time is 1-2 h.
A diamond-silicon carbide composite material produced by the method of any one of the preceding examples.
An electronic product, wherein the heat dissipation material of the electronic product is the diamond-silicon carbide composite material.
The preparation method of the diamond-silicon carbide composite material comprises the following steps of: (5-20): (5-20): (20-60) the diamond, the graphite, the silicon powder and the binder are used as raw materials, the diamond, the graphite, the silicon powder and the binder can fully react by adopting the proportion, and the silicon powder is fully converted into silicon carbide and is compounded with the diamond to form the diamond-silicon carbide composite material with good heat dissipation performance. Firstly, mixing diamond, graphite, first silicon powder and a binder to obtain a mixture; and then carrying out selective laser sintering treatment on the obtained mixture to obtain a blank. The selective laser sintering can well control the size, shape, aperture size, aperture distribution and the like of the blank, and can realize the customized production of the diamond-silicon carbide composite material according to the design requirement. Meanwhile, the selective laser sintering controls parameters in the sintering process, so that the melting and consolidation of the binder and the graphitization of diamond inside the blank can be well controlled, and the comprehensive performance of the composite material can be improved. And after the selective laser sintering treatment, carrying out infiltration treatment on the green body and the second silicon powder in a vacuum environment. In the infiltration process, the second silicon powder is melted and evaporated into silicon vapor, the silicon vapor is used as a reaction promoter to diffuse into the blank and fully react with the original carbon source (graphite) and the new carbon source (graphitized on the surface of the diamond) to produce silicon carbide, so that the diamond-silicon carbide composite material is further densified, and the heat dissipation performance of the diamond-silicon carbide composite material is further improved.
According to the preparation method of the diamond-silicon carbide composite material, the diamond-silicon carbide composite material meeting the design and use requirements can be obtained through selective laser sintering treatment and infiltration treatment. After the diamond-silicon carbide composite material is obtained, the composite material can be molded nearly cleanly without further complex processing, complex processing procedures are effectively avoided, and the diamond-silicon carbide composite material is convenient for batch production.
The diamond-silicon carbide composite material has good heat dissipation performance, and can keep good stability in the using process. The heat dissipation material is applied to electronic products as a heat dissipation material, and can meet the heat dissipation requirement of complex distribution of electronic devices in the electronic products.
Drawings
Fig. 1 is a flow chart of a method of making a diamond-silicon carbide composite material in an embodiment of the invention.
Detailed Description
In order that the invention may be more fully understood, reference will now be made to the accompanying examples. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
As shown in fig. 1, an embodiment of the present invention provides a method for preparing a diamond-silicon carbide composite material, including the steps of:
s01: dividing the silicon powder into a first silicon powder and a second silicon powder for later use; and mixing the diamond, the graphite, the first silicon powder and the binder to obtain a mixture. Wherein the mass ratio of diamond, graphite, silicon powder and binder is (10-80): (5-20): (5-20): (20-60). By adopting the mass percentage, the diamond, the graphite, the silicon powder and the binder can fully react, and the silicon powder is fully converted into the silicon carbide and is compounded with the diamond to form the diamond-silicon carbide composite material with good heat dissipation performance.
Preferably, the mass ratio of the diamond, the graphite, the silicon powder and the binder is (30-70): (5-10): (5-10): (20-60).
Preferably, before the diamond, the graphite, the first silicon powder and the binder are mixed, the diamond is subjected to surface purification treatment. Further preferably, the diamond is subjected to surface purification treatment by using at least one solvent of absolute ethyl alcohol or acetone: the diamond is placed in a solvent for soaking, and impurities such as oil stains and the like on the surface of the diamond are removed through ultrasonic cleaning.
In a specific example, the diamond, the graphite, the first silicon powder and the binder are mixed by mechanical mixing. Preferably, the mixing time is 10-16 h, so that the diamond, the graphite, the first silicon powder and the binder are fully and uniformly mixed, and the uniformity of the diamond-silicon carbide composite material structure is improved.
S02: and carrying out selective laser sintering treatment on the mixture to obtain a porous blank. The selective laser sintering can well control the size, shape, aperture size, aperture distribution and the like of the blank, and can realize the customized production of the diamond-silicon carbide composite material according to the design requirement. Meanwhile, selective laser sintering facilitates control of parameters in the sintering process, melting and consolidation of the binder and graphitization of the diamond reinforcing phase in the blank can be well controlled, and improvement of comprehensive performance of the composite material is facilitated.
S03: and (5) degreasing the blank. Degreasing to remove the binder in the blank body, and preventing the binder from bringing adverse effects on the performance of the composite material. Preferably, the degreasing method comprises the following steps: degreasing the blank body for 15-25 h at 1000-1300 ℃ in protective gas. Further preferably, the protective gas is argon. Further preferably, in the degreasing treatment process, the green body is degreased for 21h at 1100 ℃.
S04: and carrying out infiltration treatment on the blank and the second silicon powder in a vacuum environment. Preferably, the vacuum degree of the vacuum environment is 0.5MPa to 1 MPa. Further preferably, the temperature of the infiltration treatment is 1500-1650 ℃, and the infiltration time is 1-2 h. In the infiltration process, the second silicon powder is melted and evaporated into silicon vapor, the silicon vapor is used as a reaction promoter to diffuse into the blank and fully react with the original carbon source (graphite) and the new carbon source (graphitized on the surface of the diamond) to produce silicon carbide, so that the diamond-silicon carbide composite material is further densified, and the heat dissipation performance of the diamond-silicon carbide composite material is further improved.
In a specific example, the mass ratio of the first silicon powder to the second silicon powder is 10: (50-80). The mass ratio of the first silicon powder to the second silicon powder is 10: (50-80), the usage amount of the first silicon powder and the second silicon powder is reasonably distributed so that the first silicon powder can support the strength of the blank, and the second silicon powder can fully fill the pores of the blank and react with redundant carbon sources to generate silicon carbide.
In a specific example, the particle size of diamond is 500 to 60 mesh, the particle size of silicon powder is 500 to 200 mesh, and the particle size of graphite is 800 to 180 mesh. The diamond, the silicon powder and the graphite are controlled within a proper particle size range, so that the raw materials are mixed, the raw materials are fully reacted, and the composite material is convenient to form. After molding, complex post-processing is not needed to prepare the composite material with the size and the shape meeting the use requirements.
In a particular example, the diamond is at least one of single crystal diamond and polycrystalline diamond.
In a specific example, the purity of the silicon powder is not less than 99.96%. By using the high-purity silicon powder, impurities introduced into a reaction system can be effectively controlled in the preparation process of the diamond-silicon carbide composite material, and the comprehensive performance of the diamond-silicon carbide composite material is improved.
In a specific example, the binder is one or more of phenolic resin, epoxy resin and water glass.
In a specific example, the laser power of the selective laser sintering treatment on the mixture is 20W-30W, the scanning speed is 600 mm/s-1000 mm/s, the scanning interval is 0.04 mm-0.08 mm, and the powder spreading thickness of each layer is 0.06 mm-0.12 mm. And selecting proper selective laser sintering processing parameters according to the raw material formula of the diamond-silicon carbide composite material to obtain a blank body with a porous structure meeting the design requirement. Under the condition of the sintering treatment parameters, the size, the shape, the pore size, the porosity, the pore size distribution and the like of the blank body can be conveniently controlled, and the customized production of the diamond-silicon carbide composite material is realized.
In the embodiment, the diamond-silicon carbide composite material meeting the design and use requirements can be obtained through selective laser sintering treatment and infiltration treatment. After the diamond-silicon carbide composite material is obtained, the composite material can be molded nearly cleanly without further complex processing, complex processing procedures are effectively avoided, and the diamond-silicon carbide composite material is convenient for batch production.
In a specific example, the blank is covered on the second silicon powder under a vacuum environment, and then an infiltration treatment is performed. And covering the blank above the second silicon powder, wherein in the infiltration process, when the second silicon powder is melted and evaporated into silicon vapor, the silicon vapor can more easily enter the blank to react without causing the loss of the silicon vapor, so that the diamond, the graphite and the silicon powder react according to the preset mass percentage, and the prepared diamond-silicon carbide composite material meets the design requirement.
The embodiment of the invention also provides a diamond-silicon carbide composite material, and the diamond-silicon carbide composite material is prepared by adopting the preparation method.
An embodiment of the present invention further provides an electronic product, wherein the heat dissipation material of the electronic product is the diamond-silicon carbide composite material.
The diamond-silicon carbide composite material in the embodiment has good heat dissipation performance, and can keep good stability in the using process. The heat dissipation material is applied to electronic products as a heat dissipation material, and can meet the heat dissipation requirement of complex distribution of electronic devices in the electronic products.
The following are specific examples.
Example 1
In this example, the mass of the single crystal diamond was 30 parts, the mass of the graphite was 5 parts, the mass of the silicon powder was 5 parts, and the mass of the phenol resin was 60 parts. The mass ratio of the first silicon powder to the second silicon powder is 10: 55. The purity of the silicon powder is 99.99%.
The preparation method of the diamond-silicon carbide composite material comprises the following steps:
(1) mechanically mixing the diamond, the graphite, the first silicon powder and the phenolic resin for 10 hours to obtain a mixture.
(2) And (2) carrying out selective laser sintering treatment on the mixture obtained in the step (1) to obtain a blank. The laser power of the selective laser sintering treatment is 20W, the scanning speed is 600mm/s, the scanning interval is 0.05mm, the powder spreading thickness of each layer is 0.1mm, and the scanning strategy is multi-area mixed type scanning in the slice.
(3) Degreasing the blank obtained in the step (2) at 1100 ℃ for 21h under the protection of argon.
(4) And placing the second silicon powder in a graphite crucible, covering the degreased blank body above the second silicon powder, and then placing the graphite crucible filled with the second silicon powder and the degreased blank body in a silicon infiltration furnace for vacuum infiltration for 2 hours, wherein the infiltration temperature is 1500 ℃ and the vacuum degree is 0.5 Mpa. And cooling along with the furnace after infiltration is finished to obtain the diamond-silicon carbide composite material in the embodiment.
The thermal conductivity of the diamond-silicon carbide composite material prepared in this example was 263 W.m-1·K-1A coefficient of thermal expansion of 3.7X 10-6K-1The bending strength was 234 MPa.
Example 2
In this example, the mass of the single crystal diamond was 50 parts, the mass of the graphite was 5 parts, the mass of the silicon powder was 5 parts, and the mass of the phenol resin was 40 parts. The mass ratio of the first silicon powder to the second silicon powder is 10: 65. The purity of the silicon powder is 99.99%.
The preparation method of the diamond-silicon carbide composite material comprises the following steps:
(1) mechanically mixing the diamond, the graphite, the first silicon powder and the phenolic resin for 10 hours to obtain a mixture.
(2) And (2) carrying out selective laser sintering treatment on the mixture obtained in the step (1) to obtain a blank. The laser power of the selective laser sintering treatment is 25W, the scanning speed is 800mm/s, the scanning interval is 0.05mm, the powder spreading thickness of each layer is 0.1mm, and the scanning strategy is multi-area mixed type scanning in the slice.
(3) Degreasing the blank obtained in the step (2) at 1100 ℃ for 21h under the protection of argon.
(4) And placing the second silicon powder in a graphite crucible, covering the degreased blank body above the second silicon powder, and then placing the graphite crucible filled with the second silicon powder and the degreased blank body in a silicon infiltration furnace for vacuum infiltration for 2 hours, wherein the infiltration temperature is 1550 ℃ and the vacuum degree is 0.5 Mpa. And cooling along with the furnace after infiltration is finished to obtain the diamond-silicon carbide composite material in the embodiment.
The thermal conductivity of the diamond-silicon carbide composite material prepared in the example is 464 W.m-1·K-1A coefficient of thermal expansion of 3.2X 10-6K-1The bending strength was 301 MPa.
Example 3
In this example, the mass of the single crystal diamond was 70 parts, the mass of the graphite was 5 parts, the mass of the silicon powder was 5 parts, and the mass of the phenol resin was 20 parts. The mass ratio of the first silicon powder to the second silicon powder is 10: 75. the purity of the silicon powder is 99.99%.
The preparation method of the diamond-silicon carbide composite material comprises the following steps:
(1) mechanically mixing the diamond, the graphite, the first silicon powder and the phenolic resin for 10 hours to obtain a mixture.
(2) And (2) carrying out selective laser sintering treatment on the mixture obtained in the step (1) to obtain a blank. The laser power of the selective laser sintering treatment is 30W, the scanning speed is 1000mm/s, the scanning interval is 0.05mm, the powder spreading thickness of each layer is 0.1mm, and the scanning strategy is multi-area mixed type scanning in the slice.
(3) Degreasing the blank obtained in the step (2) at 1100 ℃ for 21h under the protection of argon.
(4) And placing the second silicon powder in a graphite crucible, covering the degreased blank body above the second silicon powder, and then placing the graphite crucible filled with the second silicon powder and the degreased blank body in a silicon infiltration furnace for vacuum infiltration for 2 hours, wherein the infiltration temperature is 1600 ℃ and the vacuum degree is 0.5 Mpa. And cooling along with the furnace after infiltration is finished to obtain the diamond-silicon carbide composite material in the embodiment.
The thermal conductivity of the diamond-silicon carbide composite material prepared in this example was 563 W.m-1·K-1A coefficient of thermal expansion of 3.0X 10-6K-1The bending strength is 352 MPa.
Comparative example 1
In this example, the mass of the single crystal diamond was 30 parts, the mass of the graphite was 5 parts, the mass of the silicon powder was 5 parts, and the mass of the phenol resin was 60 parts. The mass ratio of the first silicon powder to the second silicon powder is 10: 55. the purity of the silicon powder is 99.99%.
The preparation method of the diamond-silicon carbide composite material comprises the following steps:
(1) mechanically mixing the diamond, the graphite, the first silicon powder and the phenolic resin for 10 hours to obtain a mixture.
(2) Carrying out vacuum hot-pressing sintering treatment on the mixture obtained in the step (1)
(3) Degreasing the blank obtained in the step (2) at 1100 ℃ for 21h under the protection of argon.
(4) And placing the second silicon powder in a graphite crucible, covering the degreased blank body above the second silicon powder, and then placing the graphite crucible filled with the second silicon powder and the degreased blank body in a silicon infiltration furnace for vacuum infiltration for 2 hours, wherein the infiltration temperature is 1500 ℃ and the vacuum degree is 0.5 Mpa. And cooling along with the furnace after infiltration is finished to obtain the diamond-silicon carbide composite material in the embodiment.
The thermal conductivity of the diamond-silicon carbide composite material prepared in this example was 181 W.m-1·K-1A coefficient of thermal expansion of 3.9X 10-6K-1The bending strength was 206 MPa.
Comparative example 2
In this example, the mass of the single crystal diamond was 30 parts, the mass of the graphite was 5 parts, the mass of the silicon powder was 5 parts, and the mass of the phenol resin was 60 parts. The mass ratio of the first silicon powder to the second silicon powder is 10: 85. the purity of the silicon powder is 99.99%.
The preparation method of the diamond-silicon carbide composite material comprises the following steps:
(1) mechanically mixing the diamond, the graphite, the first silicon powder and the phenolic resin for 10 hours to obtain a mixture.
(2) And (2) carrying out selective laser sintering treatment on the mixture obtained in the step (1) to obtain a blank. The laser power of the selective laser sintering treatment is 20W, the scanning speed is 600mm/s, the scanning interval is 0.05mm, the powder spreading thickness of each layer is 0.1mm, and the scanning strategy is multi-area mixed type scanning in the slice.
(3) Degreasing the blank obtained in the step (2) at 1100 ℃ for 21h under the protection of argon.
(4) And placing the second silicon powder in a graphite crucible, covering the degreased blank body above the second silicon powder, and then placing the graphite crucible filled with the second silicon powder and the degreased blank body in a silicon infiltration furnace for vacuum infiltration for 2 hours, wherein the infiltration temperature is 1500 ℃ and the vacuum degree is 0.5 Mpa. And cooling along with the furnace after infiltration is finished to obtain the diamond-silicon carbide composite material in the embodiment.
The thermal conductivity of the diamond-silicon carbide composite material prepared in this example was 224 W.m-1·K-1A coefficient of thermal expansion of 4.0X 10-6K-1And the bending strength is 196 MPa.
Comparative example 3
In this example, the mass of the single crystal diamond was 30 parts, the mass of the graphite was 5 parts, the mass of the silicon powder was 5 parts, and the mass of the phenol resin was 60 parts. The mass ratio of the first silicon powder to the second silicon powder is 10: 45. the purity of the silicon powder is 99.99%.
The preparation method of the diamond-silicon carbide composite material comprises the following steps:
(1) mechanically mixing the diamond, the graphite, the first silicon powder and the phenolic resin for 10 hours to obtain a mixture.
(2) And (2) carrying out selective laser sintering treatment on the mixture obtained in the step (1) to obtain a blank. The laser power of the selective laser sintering treatment is 20W, the scanning speed is 600mm/s, the scanning interval is 0.05mm, the powder spreading thickness of each layer is 0.1mm, and the scanning strategy is multi-area mixed type scanning in the slice.
(3) Degreasing the blank obtained in the step (2) at 1100 ℃ for 21h under the protection of argon.
(4) And placing the second silicon powder in a graphite crucible, covering the degreased blank body above the second silicon powder, and then placing the graphite crucible filled with the second silicon powder and the degreased blank body in a silicon infiltration furnace for vacuum infiltration for 2 hours, wherein the infiltration temperature is 1500 ℃ and the vacuum degree is 0.5 Mpa. And cooling along with the furnace after infiltration is finished to obtain the diamond-silicon carbide composite material in the embodiment.
The thermal conductivity of the diamond-silicon carbide composite material prepared in this example was 247W · m-1·K-1A coefficient of thermal expansion of 3.8X 10-6K-1The flexural strength was 217 MPa.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (10)
1. A preparation method of a diamond-silicon carbide composite material is characterized by comprising the following steps: the method comprises the following steps:
diamond, graphite, silicon powder and a binder are mixed according to the mass ratio (10-80): (5-20): (5-20): (20-60) preparing materials;
dividing the silicon powder into a first silicon powder and a second silicon powder;
mixing the diamond, the graphite, the first silicon powder and the binder to obtain a mixture;
carrying out selective laser sintering treatment on the mixture to obtain a green body;
and carrying out infiltration treatment on the blank and the second silicon powder in a vacuum environment.
2. The method of preparing a diamond-silicon carbide composite material according to claim 1, wherein: the mass ratio of the first silicon powder to the second silicon powder is 10: (50-80).
3. The method of preparing a diamond-silicon carbide composite material according to claim 1, wherein: the particle size of the diamond is 500-60 meshes, the particle size of the silicon powder is 500-200 meshes, and the particle size of the graphite is 800-180 meshes.
4. The method of preparing a diamond-silicon carbide composite material according to claim 1, wherein: the diamond is at least one of single crystal diamond and polycrystalline diamond; and/or the presence of a gas in the gas,
the purity of the silicon powder is not lower than 99.96%; and/or the presence of a gas in the gas,
the binder is one or more of phenolic resin, epoxy resin and water glass.
5. A method of producing a diamond-silicon carbide composite material according to any one of claims 1 to 4, wherein: the laser power for carrying out selective laser sintering treatment on the mixture is 20W-30W, the scanning speed is 600 mm/s-1000 mm/s, the scanning interval is 0.04 mm-0.08 mm, and the powder spreading thickness of each layer is 0.06 mm-0.12 mm.
6. A method of producing a diamond-silicon carbide composite material according to any one of claims 1 to 4, wherein: and the step of degreasing the blank body before the infiltration treatment is carried out on the blank body and the second silicon powder.
7. The method of preparing a diamond-silicon carbide composite material according to claim 6, wherein: the degreasing method comprises the following steps: degreasing the blank body for 15-25 h at 1000-1300 ℃ in protective gas.
8. A method of producing a diamond-silicon carbide composite material according to any one of claims 1 to 4, wherein: covering the blank above the second silicon powder in a vacuum environment, and then carrying out infiltration treatment; and/or the presence of a gas in the gas,
the vacuum degree of the vacuum environment is 0.5MPa to 1 MPa; and/or the presence of a gas in the gas,
the temperature of the infiltration treatment is 1500-1650 ℃, and the infiltration time is 1-2 h.
9. A diamond-silicon carbide composite characterized by: the diamond-silicon carbide composite material is prepared by the preparation method according to any one of claims 1 to 8.
10. An electronic product, characterized in that: a heat dissipating material for an electronic product, which is a diamond-silicon carbide composite material according to claim 9.
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