CN114299823A - Display panel, preparation method thereof, light detection method and display device - Google Patents
Display panel, preparation method thereof, light detection method and display device Download PDFInfo
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Abstract
A display panel and its preparation method, optical detection method, display device, the display panel includes array base plate and opposite base plate set up relatively, there are optical detection circuit and reference signal that produce the circuit on the array base plate, the optical detection circuit is used for detecting the light intensity of incident light, produce the correspondent electrical signal of light intensity of incident light; the reference signal generating circuit is used for generating corresponding electric signals when no incident light irradiates; the opposite substrate comprises a light-transmitting area and a light-shielding area, wherein the orthographic projection of at least part of the light-transmitting area on the array substrate is overlapped with the orthographic projection of the light detection circuit on the array substrate, and the orthographic projection of the light-shielding area on the array substrate covers the orthographic projection of the reference signal generating circuit on the array substrate. This is disclosed has realized the ambient light and has detected, and has reduced display device's overall cost, is favorable to using display panel's electronic equipment to realize complete machine function integration, and display panel need not to open the thru hole for the light detection circuit, is favorable to electronic equipment to realize the full face screen.
Description
Technical Field
The present disclosure relates to but not limited to the field of display technologies, and in particular, to a display panel, a manufacturing method thereof, a light detection method, and a display device.
Background
With the development of display technology and the wide application of display devices, users have made higher demands on the display devices, for example, the display devices are required to adjust their display brightness according to the ambient light conditions, and the display devices are required to have lower power consumption.
Some display devices sense the intensity of ambient light by installing a light sensor to adjust the brightness of the display panel and achieve the effect of reducing power consumption. However, the cost of the photosensitive sensor is high, and the requirement that the display panel is provided with the independent hole to meet the requirement of collecting ambient light is not beneficial to the realization of a full-screen display of the display device.
Disclosure of Invention
The embodiment of the disclosure provides a display panel, a manufacturing method thereof, an optical detection method and a display device, which can reduce cost, and the display panel does not need to be provided with holes, and is beneficial to realizing a full-screen.
The embodiment of the disclosure provides a display panel, which comprises an array substrate and an opposite substrate which are oppositely arranged, wherein a light detection circuit and a reference signal generation circuit are arranged on the array substrate, and the light detection circuit is used for detecting the light intensity of incident light and generating an electric signal corresponding to the light intensity of the incident light; the reference signal generating circuit is used for generating corresponding electric signals when no incident light irradiates; the opposite substrate comprises a light-transmitting area and a light-shielding area, wherein the orthographic projection of at least part of the light-transmitting area on the array substrate is overlapped with the orthographic projection of the light detection circuit on the array substrate, and the orthographic projection of the light-shielding area on the array substrate covers the orthographic projection of the reference signal generation circuit on the array substrate.
In an exemplary embodiment, a side of at least a portion of the light-transmitting region facing the array substrate is provided with a prism structure, the prism structure is composed of a plurality of prism units, and an orthogonal projection of the prism structure on the array substrate overlaps an orthogonal projection of the light detection circuit on the array substrate.
In an exemplary embodiment, the plurality of prism units are sequentially arranged along a first direction, at least one prism unit is a cylindrical body extending along a second direction, and cross sections of the plurality of prism units in the first direction are all isosceles triangles in a plane perpendicular to the display panel.
In an exemplary embodiment, the prism unit is a rectangular pyramid or a triangular pyramid.
In an exemplary embodiment, the display panel includes a display area and a peripheral area, and the light detection circuit and the reference signal generation circuit are located in the peripheral area.
In an exemplary embodiment, the display panel further includes a detection unit including a first detection terminal and a second detection terminal, and a power supply unit including a first power supply terminal and a second power supply terminal, the light detection circuit includes N identical first transistors, the reference signal generation circuit includes N identical second transistors, and the first transistors and the second transistors are identical transistors, control electrodes of the N first transistors and control electrodes of the N second transistors are both connected to the first power supply terminal, first electrodes of the N first transistors and first electrodes of the N second transistors are both connected to the second power supply terminal, second electrodes of the N first transistors are connected to the first detection terminal, and second electrodes of the N second transistors are connected to the second detection terminal, n is an integer greater than or equal to 1.
In an exemplary embodiment, a dielectric layer is disposed between the array substrate and the opposite substrate, and a refractive index of the dielectric layer is greater than or less than a refractive index of the opposite substrate.
In an exemplary embodiment, the dielectric layer is a liquid crystal.
In an exemplary embodiment, the display panel is an organic light emitting diode OLED display panel, a quantum dot light emitting diode QLED display panel, a submillimeter light emitting diode Mini-LED display panel, or a Micro-light emitting diode Micro-LED display panel.
The embodiment of the disclosure also provides a display device, which comprises the display panel of the foregoing embodiment.
The embodiment of the present disclosure further provides a method for manufacturing a display panel, including: respectively forming an array substrate and an opposite substrate, the forming of the array substrate including: forming a photo-detection circuit and a reference signal generation circuit on a first substrate, the photo-detection circuit being for detecting the intensity of incident light and generating an electrical signal corresponding to the intensity of the incident light; the reference signal generating circuit is used for generating corresponding electric signals when no incident light irradiates; the forming of the counter substrate includes: forming a light-transmitting area and a light-shielding area on a second substrate, wherein the orthographic projection of at least part of the light-transmitting area on the array substrate is overlapped with the orthographic projection of the light detection circuit on the array substrate, and the orthographic projection of the light-shielding area on the array substrate covers the orthographic projection of the reference signal generation circuit on the array substrate; the array substrate and the opposite substrate are bonded together by a box-to-box process.
In an exemplary embodiment, forming the opposite substrate further includes: and forming a prism structure on one side of at least part of the light-transmitting area facing the array substrate, wherein the prism structure is composed of a plurality of prism units, and the orthographic projection of the prism structure on the array substrate is overlapped with the orthographic projection of the light detection circuit on the array substrate.
In an exemplary embodiment, the light detection circuit includes at least one first transistor; the reference signal generating circuit comprises at least one second transistor, and the first transistor and the second transistor are the same transistor and are equal in number;
the forming of the photo-detection circuit and the reference signal generation circuit on the first substrate includes:
forming gate electrodes of the first transistor and the second transistor on the first substrate, wherein the gate electrode of the first transistor is connected with the gate electrode of the second transistor, and depositing a gate insulating layer;
forming active regions of the first and second transistors on the gate insulating layer;
forming a source and a drain of the first transistor on the active region of the first transistor, and simultaneously forming a source and a drain of the second transistor on the active region of the second transistor, wherein the source of the first transistor is connected with the source of the second transistor;
forming a passivation layer, and forming a first via hole and a second via hole on the passivation layer, wherein the first via hole exposes the drain electrode of the first transistor, and the second via hole exposes the drain electrode of the second transistor;
forming a first transfer electrode on the first via hole, and simultaneously forming a second transfer electrode on the second via hole.
The embodiment of the present disclosure further provides a light detection method for a display panel, which is applied to the display panel, and the light detection method includes: ambient light incident to the display panel reaches the photodetection circuit through a light-transmitting region on the counter substrate; the light detection circuit detects the light intensity of incident light and generates an electric signal corresponding to the light intensity of the incident light; the reference signal generating circuit generates corresponding electric signals when no incident light irradiates; and judging the intensity of the ambient light incident to the display panel according to the difference value between the electric signal generated by the light detection circuit and the electric signal generated by the reference signal generation circuit.
In an exemplary embodiment, the light detection circuit includes at least one first transistor; the reference signal generating circuit includes at least one second transistor; the first transistor and the second transistor are the same transistor and are equal in number;
the light detection circuit detects the light intensity of incident light and generates an electric signal corresponding to the light intensity of the incident light; the reference signal generating circuit generates corresponding electric signals when no incident light irradiates, and comprises: providing the same control electrode voltage for the control electrode of the first transistor and the control electrode of the second transistor, and providing the same first electrode voltage for the first electrode of the first transistor and the first electrode of the second transistor; and taking the second pole current of the first transistor as an electric signal corresponding to the detected incident light intensity, and taking the second pole current of the second transistor as a corresponding electric signal when no incident light irradiates.
The embodiment of the disclosure provides a display panel and a preparation method thereof, a light detection method and a display device, wherein a light detection circuit and a reference signal generation circuit are arranged on an array substrate, and a light transmission area corresponding to the light detection circuit and a light shading area corresponding to the reference signal generation circuit are arranged on an opposite substrate, so that the ambient light detection is realized, and the cost of the light detection circuit is far less than that of a photosensitive sensor, thereby effectively reducing the total cost of the display device; in addition, the light detection circuit is arranged in the display panel, so that the electronic equipment applying the display panel can realize the function integration of the whole machine, the display panel does not need to be provided with through holes for the light detection circuit, and the electronic equipment applying the display panel can realize a full-face screen.
Of course, not all advantages described above need to be achieved at the same time to practice any one product or method of the present disclosure. Additional features and advantages of the disclosure will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by the practice of the disclosure. The objectives and other advantages of the disclosed embodiments may be realized and attained by the structure particularly pointed out in the written description and drawings.
Drawings
The accompanying drawings are included to provide a further understanding of the disclosed embodiments and are incorporated in and constitute a part of this specification, illustrate embodiments of the disclosure and together with the example serve to explain the principles of the disclosure and not to limit the disclosure. The shapes and sizes of the various elements in the drawings are not to be considered as true proportions, but are merely intended to illustrate the present disclosure.
Fig. 1 is a schematic cross-sectional structure diagram of a display panel according to an embodiment of the disclosure;
FIG. 2 is a schematic diagram of the layout of the optical detection circuit and the reference signal generation circuit according to an embodiment of the disclosure;
FIG. 3 is a circuit schematic diagram of a photodetection circuit and a reference signal generation circuit according to an embodiment of the present disclosure;
FIG. 4 is a circuit schematic of another photodetection circuit and reference signal generation circuit according to an embodiment of the present disclosure;
fig. 5 is a schematic cross-sectional structure diagram of a display panel according to an embodiment of the disclosure;
FIG. 6 is a schematic diagram of an optical path of ambient light of the display panel shown in FIG. 5;
FIG. 7 is a schematic structural diagram of a prism unit according to an embodiment of the present disclosure;
FIG. 8 is a schematic structural diagram of another prism unit according to an embodiment of the present disclosure;
FIG. 9 is a schematic structural diagram of a prism unit according to another embodiment of the present disclosure;
fig. 10 is a schematic view of an array substrate after forming a common electrode pattern according to an embodiment of the present disclosure;
FIG. 11 is a schematic diagram of an array substrate after forming a gate electrode pattern according to an embodiment of the disclosure;
fig. 12 is a schematic view illustrating an array substrate after an active layer pattern is formed according to an embodiment of the present disclosure;
fig. 13 is a schematic view of an array substrate after a source and drain electrode pattern is formed according to an embodiment of the disclosure;
FIG. 14 is a schematic view of an array substrate after forming a passivation layer pattern according to an embodiment of the disclosure;
FIG. 15 is a schematic diagram of an array substrate after forming a transmission electrode pattern according to an embodiment of the disclosure;
FIG. 16 is a schematic diagram of an opposing substrate after forming a prism unit pattern according to an embodiment of the disclosure;
FIG. 17 is a schematic view of an opposite substrate after a black matrix pattern is formed according to an embodiment of the disclosure;
fig. 18 is a schematic flow chart illustrating a method for manufacturing a display panel according to an embodiment of the disclosure;
fig. 19 is a flowchart illustrating a light detection method of a display panel according to an embodiment of the disclosure.
Description of reference numerals:
Detailed Description
Specific embodiments of the present disclosure are described in further detail below with reference to the accompanying drawings and examples. The following examples are intended to illustrate the present disclosure, but are not intended to limit the scope of the present disclosure. It should be noted that, in the present disclosure, the embodiments and features of the embodiments may be arbitrarily combined with each other without conflict.
The display panel is one of important components for acquiring information in the electronic device, and the display effect and the energy consumption are important indexes for evaluating the display panel. The display panel keeps high luminance for a long time and can increase the energy consumption, and low luminance influences the display effect again, consequently need detect display panel's ambient light to adjust display panel's display effect according to the ambient light intensity that detects, experience with user's use is improved.
Some display devices sense the intensity of ambient light by installing a light sensor to adjust the brightness of the display panel and achieve the effect of reducing power consumption. For example, in mobile electronic products such as mobile phones, notebooks, tablet computers, etc., the power consumed by the display panel is up to 30% of the total power of the battery, and the working time of the battery can be prolonged to the maximum extent by adopting the photosensitive sensor. In addition, the photosensitive sensor helps the display panel to provide a soft picture; when the ambient brightness is higher, the display panel using the photosensitive sensor can be automatically adjusted to be high brightness, and when the external environment is darker, the display panel can be automatically adjusted to be low brightness. However, this approach has the following drawbacks:
1) the cost of the photosensitive sensor is high, so that the overall cost of the electronic equipment is increased;
2) independent photosensitive sensor is unfavorable for electronic equipment to realize complete machine function integration, and display panel need open the thru hole alone and satisfy the needs that photosensitive sensor gathered ambient light in the electronic equipment, is unfavorable for electronic equipment to realize the full face screen.
The embodiment of the present disclosure provides a display panel, including an array substrate and an opposite substrate which are oppositely arranged, wherein: the array substrate is provided with a light detection circuit and a reference signal generation circuit, and the light detection circuit is used for detecting the light intensity of incident light and generating an electric signal corresponding to the light intensity of the incident light; the reference signal generating circuit is used for generating corresponding electric signals when no incident light irradiates; the opposite substrate comprises a light-transmitting area and a light-shielding area, wherein the orthographic projection of the light-transmitting area on the array substrate is coincided with the light detection circuit, and the orthographic projection of the light-shielding area on the array substrate is coincided with the reference signal generation circuit.
According to the display panel provided by the embodiment of the disclosure, the light detection circuit and the reference signal generation circuit are arranged on the array substrate, the light transmission area corresponding to the light detection circuit and the light shading area corresponding to the reference signal generation circuit are arranged on the opposite substrate, so that the ambient light detection is realized, and the cost of the light detection circuit is far less than that of the photosensitive sensor, so that the total cost of the display device is effectively reduced; in addition, the optical detection circuit is arranged in the display panel, so that the electronic equipment applying the display panel can realize the function integration of the whole machine, the display panel does not need to be provided with through holes for the optical detection circuit, the electronic equipment applying the display panel can realize a full-face screen, the preparation process is simple, the production efficiency is high, and the advantages of low production cost, high yield and the like are achieved, and the application prospect is good.
Fig. 1 is a schematic structural diagram of a display panel according to an embodiment of the disclosure, and as shown in fig. 1, the display panel includes: an array substrate 100 and an opposite substrate 101 are oppositely arranged.
The array substrate 100 is provided with a light detection circuit 200 and a reference signal generation circuit 300, wherein the light detection circuit 200 is used for detecting the light intensity of incident light and generating an electric signal corresponding to the light intensity of the incident light; the reference signal generating circuit 300 is used for generating an electric signal corresponding to the absence of incident light.
The opposite substrate 101 comprises a light-transmitting area 400 and a light-shielding area 500, wherein the orthographic projection of at least part of the light-transmitting area 400 on the array substrate 100 is overlapped with the orthographic projection of the light detection circuit 200 on the array substrate 100, and the orthographic projection of the light-shielding area 500 on the array substrate 100 covers the orthographic projection of the reference signal generating circuit 300 on the array substrate 100.
In an exemplary embodiment, as shown in fig. 2, the display panel includes a display area 1 and a peripheral area 2, and the light detecting circuit 200 and the reference signal generating circuit 300 are located in the peripheral area 2.
Since the sealant is disposed between the array substrate 100 and the opposite substrate 101 and is made of opaque material, the light detection circuit 200 and the reference signal generation circuit 300 are preferably disposed on one side of the peripheral region 2 adjacent to the display region 1 to avoid the sealant region.
In an exemplary embodiment, the light detection circuit 200 and the reference signal generation circuit 300 are disposed at the top of the display area 1.
In one exemplary embodiment, the light detection circuit 200 and the reference signal generation circuit 300 are disposed in a horizontal direction, and the widths of the light detection circuit 200 and the reference signal generation circuit 300 in a vertical direction are 4um to 6 um. Illustratively, the widths of the photo-detection circuit 200 and the reference signal generation circuit 300 in the vertical direction may be 5 um.
In an exemplary embodiment, the display panel further includes a detection unit and a power supply unit, the detection unit includes a first detection terminal and a second detection terminal, as shown in fig. 3, the light detection circuit 200 includes a first transistor 201, the reference signal generation circuit 300 includes a second transistor 202, a control electrode of the first transistor 201 and a control electrode of the second transistor 202 are both connected to the first power supply terminal, a first electrode of the first transistor 201 and a first electrode of the second transistor 202 are both connected to the second power supply terminal, a second electrode of the first transistor 201 is both connected to the first detection terminal, and a second electrode of the second transistor 202 is both connected to the second detection terminal; the first transistor 201 and the second transistor 202 are the same transistor.
In an exemplary embodiment, the display panel further includes a detection unit including a first detection terminal and a second detection terminal, as shown in fig. 4, the photodetection circuit 200 includes N first transistors 201 arranged in parallel, and the reference signal generating circuit 300 includes N second transistors 202 arranged in parallel, the N first transistors being the same, the N second transistors being the same, the first transistors and the second transistors are the same transistors, control electrodes of the N first transistors 201 and control electrodes of the N second transistors 202 are both connected to the first power supply end, first electrodes of the N first transistors 201 and first electrodes of the N second transistors 202 are both connected to the second power supply end, second electrodes of the N first transistors 201 are both connected to the first detection end, second electrodes of the N second transistors 202 are both connected to the second detection end, and N is an integer greater than or equal to 2.
Based on the photoelectric characteristics of the first transistor 201 and the second transistor 202, when light is irradiated to the display panel, since the first transistor 201 and the second transistor 202 generate different currents due to different light, the ambient light detection function is realized by detecting the current difference (Δ I) between the second poles of the first transistor 201 and the second transistor 202.
In an exemplary embodiment, a dielectric layer having a refractive index greater than or less than that of the opposite substrate 101 is disposed between the array substrate 100 and the opposite substrate 101.
The Display panel of the embodiment may be a Liquid Crystal Display (LCD) panel, and may also be any other type of self-Light Emitting Display panel, such as an Organic Light-Emitting Diode (OLED) Display panel, a Quantum Dot Light-Emitting Diode (QLED) Display panel, a submillimeter Light-Emitting Diode (Mini-LED) Display panel, or a Micro-LED Display panel.
Because the first transistor 201 and the second transistor 202 are phototransistors, and the phototransistors comprise source and drain metal layers, when light irradiates the source and drain metal layers, light can be reflected, and a user can observe a bright line formed by the reflection of the source and drain metal layers in a dark screen state, so that the use experience of the user is reduced.
In an exemplary embodiment, as shown in fig. 5, a prism structure 11 is disposed on a side of at least a portion of the light-transmitting region 400 facing the array substrate 100, the prism structure 11 is composed of a plurality of prism units 110, and an orthogonal projection of the prism structure 11 on the array substrate 100 overlaps an orthogonal projection of the light detection circuit 200 on the array substrate 100. Preferably, the orthographic projection of the prism structure 11 on the array substrate 100 at least covers the orthographic projection of the photo-detection circuit 200 on the array substrate 100.
The display panel provided by the embodiment of the disclosure sets the prism structure 11 on the opposite substrate 101, the prism structure 11 is composed of a plurality of prism units 110, and the light reflected back to the light detection unit 200 by the plurality of prism units 110 is reflected for a plurality of times, so that the natural light quantity totally reflected back to the incident surface by the source-drain metal layers of the phototransistor is reduced, thereby weakening or eliminating the problem of light reflection, and enabling the luminous flux collected by the light detection unit to meet the requirement.
In one exemplary embodiment, the opposing prism faces of two adjacent prism units 110 are perpendicular to each other.
Fig. 6 is a schematic diagram of an optical path of ambient light corresponding to the display panel shown in fig. 5, and as shown in fig. 5 and 6, the display panel includes: the array substrate 100 is provided with a light detection circuit 200 and a reference signal generation circuit 300, wherein the light detection circuit 200 is used for detecting the light intensity of incident light and generating an electric signal corresponding to the light intensity of the incident light; the reference signal generating circuit 300 is used for generating an electric signal corresponding to the absence of incident light.
The opposite substrate 101 comprises a light-transmitting area 400 and a light-shielding area 500, wherein the orthographic projection of the light-transmitting area 400 on the array substrate 100 is overlapped with the orthographic projection of the light detection circuit 200 on the array substrate 100, and the orthographic projection of the light-shielding area 500 on the array substrate 100 covers the orthographic projection of the reference signal generating circuit 300 on the array substrate 100; the side of the light-transmitting region 400 facing the array substrate 100 is provided with a prism structure 11, the prism structure 11 is composed of a plurality of prism units 110, and an orthogonal projection of the prism structure 11 on the array substrate 100 overlaps an orthogonal projection of the light detection circuit 200 on the array substrate 100. The prism surfaces opposite to each other of the two adjacent prism units 110 are a first prism surface 1101 and a second prism surface 1102 respectively, the first reflected light reflected from the reflection surface of the phototransistor enters the first prism surface 1101 to generate a second reflected light, the second reflected light is reflected to the second prism surface 1102 to generate a third reflected light, the third reflected light enters the phototransistor again, and when the prism surfaces opposite to each other of the two adjacent prism units 110 are perpendicular to each other, the third reflected light is parallel to the direction of the first reflected light.
When the prism structure 11 is not disposed on the opposite substrate 101, the natural ambient light passes through the opposite substrate 101, and after being reflected by the metal reflective surface of the phototransistor, the natural ambient light passes through the opposite substrate 101, so that 100% reflection occurs, and a weak bright line is formed in visual effect.
When the prism structure 11 is disposed on the opposite substrate 101, natural ambient light enters the opposite substrate 101 at any angle, and light at the position of the prism unit 110 is transmitted in four states: (1) after the total reflection occurs twice in the opposing substrate 101, the light returns to the incident surface; (2) refracted to the phototransistor through the surface of the prism unit 110; (3) the metal reflecting surface of the phototransistor reflects light and escapes from the opposite substrate 101 and the phototransistor through the prism surface; (4) the metal reflecting surface of the photosensitive transistor reflects light, passes through the prism surface and reenters the next prism to be reused. According to the empirical values, the amount of light belonging to the (1) th transmission state is about 45%, the amount of light belonging to the (2) th transmission state is about 40%, the amount of light belonging to the (3) th transmission state is about 5%, and the amount of light belonging to the (4) th transmission state is about 10%.
In this embodiment, if the liquid crystal layer is filled between the array substrate 100 and the opposite substrate 101, and there is no liquid crystal rotation circuit driven here due to the design of the ambient light, only the ordinary light direction is considered, and the extraordinary light direction is not considered, the refractive index of the liquid crystal of the conventional type in the ordinary light direction is 1.4776, which is smaller than the refractive index of the opposite substrate 101 (the material is usually glass, and the refractive index is between 1.51 and 1.53), therefore, in this embodiment, the opposite substrate 101 is regarded as an optically dense medium, the liquid crystal layer is regarded as an optically sparse medium, and according to the total reflection condition: (1) light is incident on the surface of the optically thinner medium from the optically denser medium, and (2) the incident angle is equal to or greater than the critical angle, so that light incident on the liquid crystal layer from the opposing substrate 101 and having an incident angle equal to or greater than the critical angle is totally reflected.
As shown in fig. 6, the prism structure 11 is located in the light-transmitting area 400 and on a side of the opposite substrate 101 adjacent to the array substrate 100, and end faces of two adjacent prism units 20 close to the opposite substrate 101 are flush. Taking the opposite prism surfaces of two adjacent prism units 110 (in fig. 6, the first prism surface 1101 and the second prism surface 1102 are opposite prism surfaces) are perpendicular to each other, when the first reflected light reflected by the metal reflective surface of the phototransistor enters the first prism surface 1101, the first reflected light is reflected on the first prism surface 1101 to generate the second reflected light, the second reflected light is reflected on the second prism surface 1102, the second prism surface 1102 receives the second reflected light, the second reflected light is reflected on the surface of the second prism surface 1102 again to generate the third reflected light, and the third reflected light is reflected on the phototransistor. As shown in fig. 6, assuming that the incident point of the first reflected light on the first prism surface 1101 is a, the vertical normal line L1 of the first prism surface 1101 is defined as point a, the angle between the incident angle of the first reflected light and the normal line L1 is α, the angle between the second reflected light and the normal line L1 is α ', the second reflected light is directed to point B of the second prism surface 1102 according to the law of reflection α ═ α', the vertical normal line L2 of the second prism surface 1102 is defined as point B, the angle between the second reflected light and the normal line L2 is β, the angle between the third reflected light and the normal line L2 is β ', and the triangle ABC is a right-angled triangle, since the first prism surface 1101 and the second prism surface 1102 are perpendicular, the normal line L1 of the first prism surface 1101 is perpendicular to the normal line L2 of the second prism surface 1102, the normal line L1 and the normal line L2 intersect at point C, α' and β 'are complementary to each other, i.e., α', β 'may be obtained from β ═ β'. Assuming that the angle between the first reflected light and the normal line L2 is γ, γ is 90 ° - α, and β 'is 90 ° - α, and therefore γ is β', it is understood that the third reflected light reflected by the prism surface 1101 is parallel to the first reflected light incident on the first prism surface 1101 according to the parallel theorem.
It should be noted that, in the display panel of the embodiment of the disclosure, an included angle between the opposite prism faces of two adjacent prism units 110 may be between 0 and 180 degrees, when the opposite prism faces of two adjacent prism units 110 are perpendicular to each other, the third reflected light reflected by the third prism face is parallel to the first reflected light incident on the first prism face 1101, and the light detected by the phototransistor is the largest, that is, the light recycled is the largest, but in the process of manufacturing the prism units 110, there may be some minor errors, and when the included angle between the opposite prism faces is between 85 ° and 95 °, the first reflected light reflected by the metal reflective face of the phototransistor is reflected back in a direction parallel to the first reflected light after being reflected twice by the prism units 110, so that the probability of the reflected light entering human eyes is reduced. According to the display panel disclosed by the embodiment of the disclosure, by designing the plurality of prism units 110, the original 100% reflected light is reduced to 45% reflected light, and the reflected light is reduced by about half, so that the original weak bright line is hardly visible in the visual range of human eyes, and the problem of poor bright line formed by the reflected light can be avoided after the cover plate is attached.
In addition, although only about 40% of the light is transmitted to the surface of the phototransistor through the prism unit 110, the ambient light transmitted to the surface of the phototransistor through the prism unit 110 is reflected by the metal reflective surface of the phototransistor and re-enters the incident surface of the prism unit 110, and then re-enters the phototransistor after being reflected once by the opposing prism surfaces of the two adjacent prism units 110, so that the total amount of ambient light detected by the current light-sensitive crystal is about 80% of the total amount of ambient light incident from the outside, and the current ambient light intensity requirement of the ambient light can be satisfied.
It should be noted that when the array substrate 100 and the opposite substrate 101 are filled with other medium layers, the refractive index of the medium layers may be greater than or less than that of the opposite substrate 101. When the refractive index of the dielectric layer is greater than the refractive index of the opposite substrate 101, the first reflected light reflected from the metal reflective surface of the phototransistor enters the first prism surface 1101, and if the incident angle is greater than or equal to the critical angle, the first prism surface 1101 is totally reflected to generate a second reflected light, at this time, no refracted light passes through the opposite substrate 101, the second reflected light is reflected to the second prism surface 1102, the second prism surface 1102 receives the second reflected light and then totally reflects on the surface of the second prism surface 1102 again to generate a third reflected light, and the third reflected light is reflected to the phototransistor, so that the requirements of reducing the metal reflective light reflected back to the human eye and increasing the light flux detected by the phototransistor are met.
In one exemplary embodiment, as shown in fig. 7 to 9, the bottom surfaces of the adjacent prism units 110 are arranged without a gap.
In an exemplary embodiment, as shown in fig. 7, the plurality of prism units 110 are sequentially arranged along the first direction x, at least one prism unit 110 is a cylindrical body extending along the second direction y, and cross sections of the plurality of prism units 110 in the first direction x are all isosceles triangles in a plane perpendicular to the display panel. Preferably, cross sections of the plurality of prism units 110 in the first direction x in a plane perpendicular to the display panel are all isosceles right triangles, so that the phototransistors detect the most light, i.e., the most recycled light. The optical path diagram shown in fig. 6 may be a cross-sectional view of the counter substrate in the first direction x in fig. 7.
In one exemplary embodiment, as shown in fig. 8, the prism unit 110 may be a rectangular pyramid. Preferably, the prism unit 110 may be a regular rectangular pyramid so that the phototransistor detects the most light, i.e., the most light is recycled. The optical path diagram shown in fig. 6 may be a cross-sectional view of the counter substrate in the first direction x in fig. 8.
In one exemplary embodiment, as shown in fig. 9, the prism unit 110 may be a triangular pyramid. Preferably, the mirror unit 110 may be a regular triangular pyramid.
The technical solution of this embodiment is further described below by the manufacturing process of the display panel of this embodiment. The "patterning process" in this embodiment includes processes of depositing a film, coating a photoresist, exposing a mask, developing, etching, and stripping the photoresist, and is a well-established manufacturing process in the related art. The deposition may be performed by a known process such as sputtering, evaporation, chemical vapor deposition, etc., the coating may be performed by a known coating process, and the etching may be performed by a known method, which is not particularly limited herein. In the description of the present embodiment, it is to be understood that "thin film" refers to a layer of a material deposited or coated on a substrate. The "thin film" may also be referred to as a "layer" if it does not require a patterning process throughout the fabrication process. If a patterning process is required for the "thin film" during the entire fabrication process, the "thin film" is referred to as a "thin film" before the patterning process and the "layer" after the patterning process. The "layer" after the patterning process includes at least one "pattern".
The preparation process of the display panel of the embodiment mainly comprises the following steps: the method comprises the steps of (a) preparing an array substrate 100 and an opposite substrate 101 respectively, and (b) bonding the array substrate 100 and the opposite substrate 101 together through a box-to-box process.
Wherein, the preparing the array substrate 100 in the step (one) includes:
(1) a common electrode 20 is patterned on the first substrate 10. Forming the common electrode 20 pattern includes: depositing a first transparent film on the first substrate 10, coating a layer of photoresist on the first transparent film, exposing and developing the photoresist by using a mask, forming an unexposed region at the pattern position of the common electrode 20, leaving the photoresist, forming a completely exposed region at other positions, removing the photoresist, etching the first transparent film in the completely exposed region and stripping the remaining photoresist to form a pattern of the common electrode 20, as shown in fig. 10. In this embodiment, the common electrode is a planar electrode.
(2) And forming a grid line, a common electrode line and a grid electrode pattern. Forming gate lines, common electrode lines and gate electrode patterns includes: depositing a first metal film on the substrate on which the pattern is formed, coating a layer of photoresist on the first metal film, exposing and developing the photoresist by using a mask, forming unexposed regions at the positions of the gate line, the common electrode line and the gate electrode pattern, leaving the photoresist, forming a fully exposed region at other positions, removing the photoresist, etching the first metal film in the fully exposed region and stripping the remaining photoresist to form the gate line (not shown), the common electrode line (not shown) and the gate electrode pattern, wherein the gate electrode comprises a first gate electrode 30 of the first transistor 201 and a second gate electrode 31 of the second transistor 202, as shown in fig. 11. In this embodiment, the first gate electrode 30 of the first transistor 201 is connected to the second gate electrode 31 of the second transistor 202 (not shown), the gate line and the gate electrode may be an integrated structure, the first gate electrode 30 is responsible for providing the on and off voltages of the first transistor 201, and the second gate electrode 31 is responsible for providing the on and off voltages of the second transistor 202. The common electrode line is disposed parallel to the gate line, and connected to the common electrode 20, and is responsible for introducing a common voltage.
(3) An active layer pattern is formed. The forming of the active layer pattern includes: a gate insulating layer 40 is deposited on the substrate on which the pattern is formed, the gate insulating layer 40 covers the entire substrate, then an active layer film is deposited, and a patterning process is performed on the active layer film to form an active layer pattern, the active layer film includes a first active layer 50 of the first transistor 201 and a second active layer 51 of the second transistor 202, the first active layer 50 is located above the first gate electrode 30, and the second active layer 51 is located above the second gate electrode 31, as shown in fig. 12.
(4) And forming data line, source electrode and drain electrode patterns. Forming the data line, the source electrode, and the drain electrode patterns includes: a second metal film is deposited on the substrate on which the aforementioned pattern is formed, and the second metal film is subjected to a patterning process to form a pattern of a data line (not shown in the figure), a source electrode and a drain electrode, the source electrode is connected to the data line, the source electrode includes a first source electrode of the first transistor 201 and a second source electrode of the second transistor 202, the drain electrodes include a first drain electrode of the first transistor 201 and a second drain electrode of the second transistor 202, the first drain electrode is disposed opposite to the first source electrode with a horizontal channel formed therebetween, and the second drain electrode is disposed opposite to the second source electrode with a horizontal channel formed therebetween, as shown in fig. 13. The first gate electrode 30, the first active layer 50, the first source electrode 70, and the first drain electrode 60 constitute a first transistor 201, the second gate electrode 31, the second active layer 51, the second source electrode 71, and the second drain electrode 61 constitute a second transistor 202, the first source electrode 70 of the first transistor 201 and the second source electrode 71 of the second transistor 202 are connected (not shown in the figure), and the data line perpendicularly crosses the gate line 30 and is responsible for supplying a signal voltage.
(5) And forming a passivation layer pattern with a via hole. Forming the passivation layer pattern with the via hole includes: depositing a passivation layer film on the substrate on which the pattern is formed, coating a layer of photoresist on the passivation layer film, exposing and developing the photoresist by using a mask, forming a complete exposure region at the first via hole and the second via hole, removing the photoresist, forming an unexposed region at other positions, leaving the photoresist, etching the passivation layer film in the complete exposure region and stripping the remaining photoresist to form a passivation layer 80 pattern with a first via hole 81 and a second via hole 82, wherein the first via hole 81 is located at the first drain electrode 60, the passivation layer film in the first via hole is etched to expose the surface of the first drain electrode 60, the second via hole 82 is located at the second drain electrode 61, and the passivation layer film in the second via hole is etched to expose the surface of the second drain electrode 61, as shown in fig. 14.
(6) A transfer electrode pattern is formed. Forming the transfer electrode pattern includes: depositing a second transparent conductive film on the substrate on which the pattern is formed, performing a patterning process on the second transparent conductive film to form a transmission electrode pattern, wherein the transmission electrode includes a first transmission electrode 90 and a second transmission electrode 91, the first transmission electrode 90 is connected to the first drain electrode 60 through the first via hole 81, and the second transmission electrode 91 is connected to the second drain electrode 61 through the second via hole 82, as shown in fig. 15.
In this embodiment, a glass substrate or a quartz substrate may be used as the substrate. The first metal film and the second metal film may be one or more of platinum Pt, ruthenium Ru, gold Au, silver Ag, molybdenum Mo, chromium Cr, aluminum Al, tantalum Ta, titanium Ti, tungsten W, and the like. The gate insulating layer and the passivation layer can adopt silicon nitride SiNx, silicon oxide SiOx or SiNx/SiOx composite films. The first transparent conductive film and the second transparent conductive film may be indium tin oxide ITO or indium zinc oxide IZO. The material of the active layer may be a silicon semiconductor or a metal oxide semiconductor.
Although the present embodiment describes the process of preparing the array substrate 100 by taking six patterning processes as an example, in practice, five patterning processes or less may be used to prepare the array substrate 100 of the present embodiment. For example, the patterning process for forming the common electrode pattern and the patterning process for forming the gate line, the common electrode line and the gate electrode pattern may be performed by a single patterning process using a half-tone mask or a gray-tone mask, the patterning process for forming the active layer pattern and the patterning process for forming the data line, the source electrode and the drain electrode pattern, or may be performed by a single patterning process using a half-tone mask or a gray-tone mask. Although the structure of the thin film transistor is described in this embodiment by taking a bottom gate structure as an example, in practical implementation, the thin film transistor may also adopt a top gate structure, and the disclosure is not limited in detail herein.
Although the present embodiment has been described with reference to an ADS type array substrate as an example, the disclosed technical concept can also be applied to Twisted Nematic (TN) type, In-Plane Switching (IPS) type, and Fringe Field Switching (FFS) type array substrates.
Through the above process, the first substrate of this embodiment is prepared.
The preparing the opposite substrate 101 in the step (one) may include:
(1) a prism structure pattern is formed on the light-transmitting area 400 of the second base 203 on the side facing the array substrate 100, the prism structure 11 is composed of a plurality of prism units 110, and the orthographic projection of the prism structure 11 on the array substrate 100 overlaps with the orthographic projection of the photo-detection circuit 200 on the array substrate 100, as shown in fig. 16. In the present embodiment, the prism structure 11 may be formed by etching the second substrate 100, or may be formed by bonding a prism film having a plurality of prism unit 110 patterns to the second substrate 100. In this embodiment, an included angle between the opposite prism faces of two adjacent prism units 110 may be between 0 and 180 degrees.
(2) A black matrix pattern is formed on the light-shielding region 500 on the side of the second substrate 203 facing the array substrate 100, and the orthographic projection of the light-shielding region 500 on the array substrate 100 covers the orthographic projection of the reference signal generating circuit 300 on the array substrate 100, as shown in fig. 17.
In this embodiment, the formation order of the prism structure pattern and the black matrix pattern may be reversed, that is, the black matrix pattern may be formed first, and then the prism structure pattern may be formed.
Through the above process, the preparation of the opposing substrate 101 of the present embodiment is completed.
When the display panel is a liquid crystal display panel, the step (ii) may include: coating frame sealing glue on the periphery of the array substrate 100, and dripping liquid crystal on the opposite substrate 101 to fill the display area and the peripheral area with the liquid crystal; assembling the opposite substrate 101 filled with liquid crystal and the array substrate 100 coated with the frame sealing glue in a box-to-box manner; and (3) curing the frame sealing glue by using Ultraviolet (UV) light to complete the box matching process.
When the display panel is a self-luminous display panel (for example, the display panel may be an OLED display panel, a QLED display panel, a Mini-LED display panel, or a Micro-LED display panel), the step (ii) may include: coating frame sealing glue on the periphery of the array substrate 100; assembling an opposite substrate 101 and the array substrate 100 coated with the frame sealing glue in a box-to-box manner; and (5) curing the frame sealing glue by using UV light to complete the box aligning process.
Through the above process, the preparation of the display panel of the present embodiment is completed. It can be seen from the above manufacturing process that the display panel of this embodiment can solve the problem of poor bright lines caused by the reflection of light by the phototransistor by disposing the prism unit 110 on the opposite substrate, and meanwhile, ensure the sufficient light collection amount of the phototransistor, thereby ensuring the light measurement range and the measurement accuracy.
The embodiment of the disclosure also provides a preparation method of the display panel. As shown in fig. 18, the method for manufacturing a display panel according to the embodiment of the present disclosure includes:
s1, forming an array substrate and an opposite substrate respectively, the forming the array substrate including: forming a photo-detection circuit and a reference signal generation circuit on a first substrate, the photo-detection circuit being for detecting the intensity of incident light and generating an electrical signal corresponding to the intensity of the incident light; the reference signal generating circuit is used for generating corresponding electric signals when no incident light irradiates; the forming of the counter substrate includes: forming a light-transmitting area and a light-shielding area on the second substrate, wherein the orthographic projection of at least part of the light-transmitting area on the array substrate is overlapped with the orthographic projection of the light detection circuit on the array substrate, and the orthographic projection of the light-shielding area on the array substrate covers the orthographic projection of the reference signal generating circuit on the array substrate;
and S2, bonding the array substrate and the opposite substrate together through a box-to-box process.
In one exemplary embodiment, forming the opposite substrate further includes: and a prism structure is formed on one side of the light-transmitting area facing the array substrate, the prism structure is composed of a plurality of prism units, and the orthographic projection of the prism structure on the array substrate is overlapped with the orthographic projection of the light detection circuit on the array substrate.
In an exemplary embodiment, the plurality of prism units are sequentially arranged along a first direction, at least one prism unit is a columnar body extending along a second direction, and cross sections of the plurality of prism units in the first direction are all isosceles triangles in a plane perpendicular to the display panel.
In one exemplary embodiment, the prism unit may be a rectangular pyramid.
In one exemplary embodiment, the prism unit may be a triangular pyramid.
In one exemplary embodiment, the light detection circuit includes at least one first transistor, the reference signal generation circuit includes at least one second transistor, and the first transistor and the second transistor are the same transistor and equal in number, the light detection circuit and the reference signal generation circuit are formed on a first substrate, including:
forming gate electrodes of a first transistor and a second transistor on the first substrate, the gate electrode of the first transistor being connected to the gate electrode of the second transistor, and depositing a gate insulating layer;
forming active regions of the first transistor and the second transistor on the gate insulating layer;
forming a source and a drain of the first transistor on an active region of the first transistor, and simultaneously forming a source and a drain of the second transistor on an active region of the second transistor, wherein the source of the first transistor is connected with the source of the second transistor;
forming a passivation layer, and forming a first via hole and a second via hole on the passivation layer, wherein the first via hole exposes the drain electrode of the first transistor, and the second via hole exposes the drain electrode of the second transistor;
a first transfer electrode is formed on the first via hole, while a second transfer electrode is formed on the second via hole.
The embodiment of the disclosure provides a preparation method of a display panel, light reflected back by a light detection unit is reflected for multiple times by a prism unit, and the natural light quantity reflected back to an incident surface by a source drain metal layer of a phototransistor in a total reflection manner is reduced, so that the problem of light reflection is weakened or eliminated, the light flux collected by the light detection unit meets the requirement, the preparation process is simple, the production efficiency is high, and the preparation method has the advantages of low production cost, high yield and the like, and has good application prospect.
As shown in fig. 19, an embodiment of the present disclosure further provides a light detection method for a display panel, which is applied to the display panel described in any of the foregoing paragraphs, and the light detection method includes:
s1', ambient light incident on the display panel reaches the photodetection circuit via the light-transmitting region on the counter substrate;
s2', the light detection circuit detects the light intensity of the incident light and generates an electric signal corresponding to the light intensity of the incident light; the reference signal generating circuit generates corresponding electric signals when no incident light irradiates;
s3', the intensity of the ambient light incident on the display panel is determined based on the difference between the electrical signal generated by the light detection circuit and the electrical signal generated by the reference signal generation circuit.
In one exemplary embodiment, the light detection circuit includes at least one first transistor; the reference signal generating circuit includes at least one second transistor; the first transistor and the second transistor are the same transistor and are equal in number;
the light detection circuit detects the light intensity of the incident light and generates an electric signal corresponding to the light intensity of the incident light; the reference signal generating circuit generates corresponding electric signals when no incident light irradiates, and comprises:
providing the same control electrode voltage for the control electrode of the first transistor and the control electrode of the second transistor, and providing the same first electrode voltage for the first electrode of the first transistor and the first electrode of the second transistor;
and taking the second pole current of the first transistor as an electric signal corresponding to the detected incident light intensity, and taking the second pole current of the second transistor as a corresponding electric signal when no incident light irradiates.
The embodiment of the disclosure also provides a display device, which comprises the display panel of the foregoing embodiment. The display device may be: any product or component with a display function, such as a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator and the like.
In the description of the embodiments of the present disclosure, it is to be understood that the terms "middle", "upper", "lower", "front", "rear", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like, indicate orientations or positional relationships based on those shown in the drawings, are only for convenience in describing and simplifying the disclosure, and do not indicate or imply that the referred devices or elements must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the disclosure.
In the description of the embodiments of the present disclosure, it should be noted that, unless otherwise explicitly stated or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present disclosure can be understood in specific instances by those of ordinary skill in the art.
Although the embodiments disclosed in the present disclosure are described above, the descriptions are only for the convenience of understanding the present disclosure, and are not intended to limit the present disclosure. It will be understood by those skilled in the art of the present disclosure that various changes in form and details may be made therein without departing from the spirit and scope of the disclosure, and that the scope of the disclosure is to be limited only by the terms of the appended claims.
Claims (15)
1. A display panel comprises an array substrate and an opposite substrate which are oppositely arranged, wherein:
the array substrate is provided with a light detection circuit and a reference signal generation circuit, and the light detection circuit is used for detecting the light intensity of incident light and generating an electric signal corresponding to the light intensity of the incident light; the reference signal generating circuit is used for generating corresponding electric signals when no incident light irradiates;
the opposite substrate comprises a light-transmitting area and a light-shielding area, wherein the orthographic projection of at least part of the light-transmitting area on the array substrate is overlapped with the orthographic projection of the light detection circuit on the array substrate, and the orthographic projection of the light-shielding area on the array substrate covers the orthographic projection of the reference signal generation circuit on the array substrate.
2. The display panel according to claim 1, wherein a side of at least a portion of the light-transmitting region facing the array substrate is provided with a prism structure, the prism structure is composed of a plurality of prism units, and an orthogonal projection of the prism structure on the array substrate overlaps an orthogonal projection of the photo-detection circuit on the array substrate.
3. The display panel according to claim 2, wherein the plurality of prism units are sequentially arranged along a first direction, at least one of the prism units is a cylindrical body extending along a second direction, and cross sections of the plurality of prism units along the first direction are all isosceles triangles in a plane perpendicular to the display panel.
4. The display panel according to claim 2, wherein the prism unit is a rectangular pyramid or a triangular pyramid.
5. The display panel according to claim 1, wherein the display panel includes a display area and a peripheral area, and the light detection circuit and the reference signal generation circuit are located in the peripheral area.
6. The display panel according to claim 1, wherein the display panel further comprises a detection unit and a power supply unit, the detection unit comprises a first detection terminal and a second detection terminal, the power supply unit comprises a first power supply terminal and a second power supply terminal, the light detection circuit comprises N identical first transistors, the reference signal generation circuit comprises N identical second transistors, the first transistors and the second transistors are identical transistors, control electrodes of the N first transistors and control electrodes of the N second transistors are both connected to the first power supply terminal, first electrodes of the N first transistors and first electrodes of the N second transistors are both connected to the second power supply terminal, second electrodes of the N first transistors are both connected to the first detection terminal, second electrodes of the N second transistors are both connected to the second detection terminal, n is an integer greater than or equal to 1.
7. The display panel according to claim 1, wherein a dielectric layer is disposed between the array substrate and the opposite substrate, and a refractive index of the dielectric layer is greater than or less than a refractive index of the opposite substrate.
8. The display panel according to claim 7, wherein the dielectric layer is a liquid crystal.
9. The display panel of claim 1, wherein the display panel is an Organic Light Emitting Diode (OLED) display panel, a quantum dot light emitting diode (QLED) display panel, a submillimeter light emitting diode (Mini-LED) display panel, or a Micro-LED display panel.
10. A display device comprising the display panel according to any one of claims 1 to 9.
11. A method for manufacturing a display panel, comprising:
respectively forming an array substrate and an opposite substrate, the forming of the array substrate including: forming a photo-detection circuit and a reference signal generation circuit on a first substrate, the photo-detection circuit being for detecting the intensity of incident light and generating an electrical signal corresponding to the intensity of the incident light; the reference signal generating circuit is used for generating corresponding electric signals when no incident light irradiates; the forming of the counter substrate includes: forming a light-transmitting area and a light-shielding area on a second substrate, wherein the orthographic projection of at least part of the light-transmitting area on the array substrate is overlapped with the orthographic projection of the light detection circuit on the array substrate, and the orthographic projection of the light-shielding area on the array substrate covers the orthographic projection of the reference signal generation circuit on the array substrate;
the array substrate and the opposite substrate are bonded together by a box-to-box process.
12. The manufacturing method according to claim 11, wherein forming an opposing substrate further comprises: and forming a prism structure on one side of at least part of the light-transmitting area facing the array substrate, wherein the prism structure is composed of a plurality of prism units, and the orthographic projection of the prism structure on the array substrate is overlapped with the orthographic projection of the light detection circuit on the array substrate.
13. The method of manufacturing according to claim 11, wherein the photodetection circuit comprises at least one first transistor; the reference signal generating circuit includes at least one second transistor; the first transistor and the second transistor are the same transistor and are equal in number;
the forming of the photo-detection circuit and the reference signal generation circuit on the first substrate includes:
forming gate electrodes of the first transistor and the second transistor on the first substrate, wherein the gate electrode of the first transistor is connected with the gate electrode of the second transistor, and depositing a gate insulating layer;
forming active regions of the first and second transistors on the gate insulating layer;
forming a source and a drain of the first transistor on the active region of the first transistor, and simultaneously forming a source and a drain of the second transistor on the active region of the second transistor, wherein the source of the first transistor is connected with the source of the second transistor;
forming a passivation layer, and forming a first via hole and a second via hole on the passivation layer, wherein the first via hole exposes the drain electrode of the first transistor, and the second via hole exposes the drain electrode of the second transistor;
forming a first transfer electrode on the first via hole, and simultaneously forming a second transfer electrode on the second via hole.
14. A light detection method of a display panel, applied to the display panel according to claim 1, the light detection method comprising:
ambient light incident to the display panel reaches the photodetection circuit through a light-transmitting region on the counter substrate;
the light detection circuit detects the light intensity of incident light and generates an electric signal corresponding to the light intensity of the incident light; the reference signal generating circuit generates corresponding electric signals when no incident light irradiates;
and judging the intensity of the ambient light incident to the display panel according to the difference value between the electric signal generated by the light detection circuit and the electric signal generated by the reference signal generation circuit.
15. The light detection method of claim 14, wherein the light detection circuit comprises at least one first transistor; the reference signal generating circuit includes at least one second transistor; the first transistor and the second transistor are the same transistor and are equal in number;
the light detection circuit detects the light intensity of incident light and generates an electric signal corresponding to the light intensity of the incident light; the reference signal generating circuit generates corresponding electric signals when no incident light irradiates, and comprises:
providing the same control electrode voltage for the control electrode of the first transistor and the control electrode of the second transistor, and providing the same first electrode voltage for the first electrode of the first transistor and the first electrode of the second transistor;
and taking the second pole current of the first transistor as an electric signal corresponding to the detected incident light intensity, and taking the second pole current of the second transistor as a corresponding electric signal when no incident light irradiates.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2024026836A1 (en) * | 2022-08-05 | 2024-02-08 | 京东方科技集团股份有限公司 | Brightness control method and apparatus for display panel |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203422543U (en) * | 2013-07-12 | 2014-02-05 | 京东方科技集团股份有限公司 | Array substrate and display device |
| CN108110010A (en) * | 2017-12-15 | 2018-06-01 | 京东方科技集团股份有限公司 | Array substrate and preparation method thereof, touch-control display panel |
| CN110211975A (en) * | 2019-06-27 | 2019-09-06 | 京东方科技集团股份有限公司 | A kind of array substrate, display panel, display device |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203422543U (en) * | 2013-07-12 | 2014-02-05 | 京东方科技集团股份有限公司 | Array substrate and display device |
| CN108110010A (en) * | 2017-12-15 | 2018-06-01 | 京东方科技集团股份有限公司 | Array substrate and preparation method thereof, touch-control display panel |
| CN110211975A (en) * | 2019-06-27 | 2019-09-06 | 京东方科技集团股份有限公司 | A kind of array substrate, display panel, display device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024026836A1 (en) * | 2022-08-05 | 2024-02-08 | 京东方科技集团股份有限公司 | Brightness control method and apparatus for display panel |
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