CN114277358A - Liquid source bottle and semiconductor process equipment - Google Patents
Liquid source bottle and semiconductor process equipment Download PDFInfo
- Publication number
- CN114277358A CN114277358A CN202111342420.4A CN202111342420A CN114277358A CN 114277358 A CN114277358 A CN 114277358A CN 202111342420 A CN202111342420 A CN 202111342420A CN 114277358 A CN114277358 A CN 114277358A
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- liquid
- air inlet
- liquid containing
- bottle
- gas
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- 239000007788 liquid Substances 0.000 title claims abstract description 166
- 238000000034 method Methods 0.000 title claims abstract description 27
- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 238000012545 processing Methods 0.000 claims description 2
- 230000008020 evaporation Effects 0.000 abstract description 6
- 238000001704 evaporation Methods 0.000 abstract description 6
- 239000007789 gas Substances 0.000 description 64
- 239000012159 carrier gas Substances 0.000 description 23
- 150000002902 organometallic compounds Chemical class 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 238000007664 blowing Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910001338 liquidmetal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
A liquid source bottle and semiconductor process equipment are used in the semiconductor process equipment, the liquid source bottle comprises a bottle body and a plurality of liquid holding pools which are sequentially arranged in the bottle body from top to bottom; the top of the bottle body is provided with an air inlet and an air outlet; the liquid containing pools are communicated with the air inlet through air inlet pipelines and communicated with the air outlet through air outlet pipelines respectively. The liquid source bottle adopts a mode of arranging a plurality of layers of liquid containing pools in one source bottle, greatly increases the evaporation capacity of the liquid source on the basis of not increasing the volume of the source bottle, and meets the process requirements of semiconductor process equipment with large capacity.
Description
Technical Field
The invention belongs to the technical field of semiconductors, and particularly relates to a liquid source bottle and semiconductor process equipment.
Background
During a Metal-organic Chemical Vapor Deposition (MOCVD) process, gaseous Metal-organic compounds decompose on a wafer on a susceptor surface within a process chamber and a thin film of a Metal or Metal compound is thermally deposited on the wafer surface. The gaseous metalorganic compound can be obtained by the following process: the liquid metal organic compound is stored in a source bottle as a source, namely the liquid source, the space except the liquid source in the source bottle is in a low-pressure state, a certain amount of gaseous source can be evaporated from the surface of the liquid source, inert gas with certain flow and pressure is introduced into the source bottle to serve as carrier gas, the carrier gas is blown over the surface of the liquid source, the gaseous metal organic compound evaporated from the source bottle, namely the gaseous source can be carried out of the source bottle, the carrier gas carrying the gaseous source passes through a series of process gas pipelines and finally reaches a process chamber, and corresponding CVD reaction is carried out on the surface of a wafer.
During the CVD reaction, the rate of film deposition on the wafer surface is directly related to the amount of gaseous source reaching the wafer surface per unit time, and insufficient gaseous source reaching the wafer surface per unit time will affect the efficiency of the entire deposition process and thus the overall capacity of the equipment. According to the liquid evaporation principle, the amount of liquid evaporated into a gaseous state per unit time is directly proportional to the liquid temperature and to the liquid surface area at a certain pressure, and the process temperature and pressure of the source used for a particular CVD reaction are determined, so that the amount of gaseous source evaporated in the source bottle per unit time is only related to the liquid surface area. Fig. 1 shows a schematic structural diagram of a source bottle adopting a surface blowing mode, wherein a gas source 6 is evaporated from the surface of a liquid source 5, a carrier gas enters the source bottle through an air inlet 1 in an air inlet direction 3, the carried gas source 6 flows out from an air outlet 2 in a direction indicated by a flow direction 7 and flows towards an air outlet direction 4 of the carrier gas carrying the gas source, a filling port 8 of the source bottle is arranged in the middle of the top, the volume of the source bottle cannot be increased without limit due to the conditions of the equipment, and therefore, the surface area of the liquid source in the source bottle cannot be increased without limit, and as shown in the source bottle shown in fig. 1, the surface area of the liquid source is limited by the size of the source bottle and cannot be effectively increased. Therefore, how to increase the carrying amount of the liquid source with smaller saturated vapor pressure is a key technical problem. In order to improve the overall capacity of the equipment, a CVD machine station usually uses 2 or more source bottles connected in parallel to achieve a higher level of the expected source blow-off amount, but each additional source bottle increases a set of auxiliary equipment of the source bottle, including a pneumatic valve set, a heating and heat-insulating device and the like, and the material cost and the maintenance difficulty of the machine station are increased.
Therefore, there is a need for a new liquid source bottle that can greatly increase the surface area of the liquid source inside the source bottle and increase the rate of the CVD reaction without increasing the volume of the source bottle.
Disclosure of Invention
The invention aims to provide a liquid source bottle and semiconductor process equipment, which can greatly increase the surface area of a liquid source in the source bottle under the condition of not increasing the volume of the source bottle.
In order to achieve the purpose, the invention provides a liquid source bottle which is used in semiconductor process equipment and comprises a bottle body, a bottle mouth section and a plurality of liquid containing pools, wherein the bottle mouth section is sequentially arranged in the bottle body from top to bottom, and the liquid containing pools are sequentially connected from the bottle mouth section to bottom;
the top of the bottle mouth section of the bottle body is provided with an air inlet and an air outlet;
the liquid containing pools are communicated with the air inlet through air inlet pipelines and the air outlet through air outlet pipelines respectively.
Preferably, the air inlet pipeline comprises a plurality of air inlet pipe sections which are sequentially communicated from top to bottom, each air inlet pipe section corresponds to one liquid containing pool except the lowest liquid containing pool, and the sectional areas of the plurality of air inlet pipe sections from top to bottom are gradually reduced.
Preferably, the cross-sectional area of the ith tube segment from top to bottom is the cross-sectional area of the gas inlet
Wherein i and N represent positive integers, i is more than or equal to 1 and less than N, and N represents the total number of the liquid containing pools.
Preferably, the top of the side wall of each liquid containing pool is provided with an air inlet hole respectively, the air inlet holes are communicated with the air inlet pipeline, and the sectional area of each air inlet hole is equal to that of the air inlet
N represents the total number of the liquid holding tanks.
Preferably, the gas outlet pipeline comprises a plurality of gas outlet pipe sections which are sequentially communicated from top to bottom, one liquid containing pool except the lowermost liquid containing pool of each gas outlet pipe section corresponds to each gas outlet pipe section, and the sectional areas of the plurality of gas outlet pipe sections are the same; and the top of the side wall of each liquid containing pool is provided with an air outlet hole respectively, and the air outlet holes are communicated with the air outlet pipe sections above the air outlet holes.
Preferably, the air inlet pipeline and the air outlet pipeline are symmetrically arranged relative to the central axis of the bottle body.
Preferably, the liquid container further comprises a filling opening, and the liquid containing pools are communicated with the filling opening.
Preferably, except for the liquid containing pool at the lowest part, the inner wall of each liquid containing pool is provided with a flow guide hole penetrating through the bottom of the pool, and the adjacent two liquid containing pools are communicated through the flow guide holes.
Preferably, the bottle body comprises a plurality of bottle body sections welded from top to bottom in sequence, and each bottle body section is internally provided with one liquid containing pool;
the outer diameters of the plurality of bottle body segments are equal; and/or the presence of a gas in the gas,
the liquid containing pools are the same in shape and size.
The invention also provides semiconductor process equipment comprising the liquid source bottle.
The invention relates to a liquid source bottle, which has the beneficial effects that: the method of arranging the multilayer liquid containing pools in one source bottle is adopted, so that the surface area of the liquid source exposed in the space is greatly increased on the basis of not increasing the volume of the source bottle, the evaporation capacity of the liquid source in unit time can be increased, and the process requirement of semiconductor process equipment with large capacity is met.
Additional features and advantages of the invention will be set forth in the detailed description which follows.
Drawings
The above and other objects, features and advantages of the present invention will become more apparent by describing in more detail exemplary embodiments thereof with reference to the attached drawings, in which like reference numerals generally represent like parts throughout.
FIG. 1 is a schematic diagram showing the overall structure of a semiconductor processing apparatus in the prior art;
FIG. 2 shows a schematic diagram of a liquid source bottle of an exemplary embodiment of the present invention;
FIG. 3 illustrates an exploded schematic view of a liquid source bottle multiple bottle section of an exemplary embodiment of the present invention.
Description of reference numerals:
1. the gas source device comprises a gas inlet, a gas outlet, a gas inlet direction, a gas outlet direction, a gas source, a liquid source, a gas source, a flow direction, a filling port, a flow dividing carrier gas, a first liquid source, a converging gas, a gas source, a flow guiding hole, a second liquid source, a gas source, a flow guiding hole, a second liquid source, a flow guiding hole, a flow guiding hole, a flow guiding hole, a flow guiding hole, a flow channel, a flow, a.
Detailed Description
Preferred embodiments of the present invention will be described in more detail below. While the following describes preferred embodiments of the present invention, it should be understood that the present invention may be embodied in various forms and should not be limited by the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.
In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the invention and to simplify the description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and are therefore not to be considered limiting of the invention.
In order to solve the problems in the prior art, the invention provides a liquid source bottle which is used in semiconductor process equipment and comprises a bottle body and a plurality of liquid containing pools which are sequentially arranged in the bottle body from top to bottom as shown in figure 2;
the top of the bottle body is provided with an air inlet 1 and an air outlet 2;
the liquid containing pools are respectively communicated with the air inlet 1 through air inlet pipelines and communicated with the air outlet 2 through air outlet pipelines;
the liquid source bottle adopts the mode of arranging the plurality of layers of liquid containing pools in one source bottle, greatly increases the surface area of the liquid source exposed in the space on the basis of not increasing the volume of the source bottle, further can increase the evaporation capacity of the liquid source in unit time, and meets the process requirements of semiconductor process equipment with large capacity.
The air inlet pipeline comprises a plurality of air inlet pipe sections which are sequentially communicated from top to bottom, the horizontal position of each air inlet pipe section corresponds to one liquid containing pool except the lowest liquid containing pool, and the sectional areas of the plurality of air inlet pipe sections from top to bottom are gradually reduced. Wherein, the liquid containing pool at the lowest part is communicated with the air inlet pipe section corresponding to the liquid containing pool above the liquid containing pool.
The liquid containing pools are respectively communicated with the gas inlet 1 through gas inlet pipelines and communicated with the gas outlet 2 through gas outlet pipelines, in the process, incoming carrier gas from the gas inlet 1 enters the gas inlet pipelines, the carrier gas is firstly distributed to the upper part of the liquid containing pool on the first layer and the next gas inlet pipe section in a mode of distributing carrier gas 9, then the carrier gas is sequentially distributed to the surface of each liquid containing pool, a gas source 12 evaporated from a liquid source of each liquid containing pool is carried by the carrier gas and is collected to the gas outlet 2 through the gas outlet pipelines to form converged gas 11, and the converged gas 11 flows out through the gas outlet 2 and flows towards the gas outlet direction 4 into a reaction chamber of semiconductor process equipment.
Under the condition of certain temperature, the gas flow is in direct proportion to the sectional area of the gas transmission pipeline, and the liquid source bottle related to the invention has the advantages that the internal pressure of the source bottle is constant, the gas inlet pipeline adopts the reducing design, so that the internal diameters of a plurality of gas inlet pipeline sections from top to bottom are gradually reduced, the flow of carrier gas entering from the gas inlet 1 blowing to the four layers of liquid containing pools is equivalent, and the liquid sources in the liquid containing pools at all layers are synchronously consumed.
The cross-sectional area of the ith tube section from top to bottom is the cross-sectional area of the gas inlet 1
Wherein i and N represent positive integers, and 1 is not more than i<N, N represents the total number of the liquid holding tanks.
Side wall of each liquid containing poolThe top parts of the air inlet holes 17 are respectively provided with an air inlet hole 17, the air inlet holes 17 are communicated with an air inlet pipeline, and the sectional area of each air inlet hole 17 is the sectional area of the air inlet 1
N represents the total number of the liquid holding tanks.
The number of the liquid holding tanks can be 2 to 8, and even more, and the number of the liquid holding tanks can be determined according to the actual conditions such as the whole height of the liquid source bottle, the equipment space and the like, but is not limited in the range enumerated in the application.
Specifically, in one embodiment of the present invention, the number of the liquid holding tanks is four, and the four liquid holding tanks are respectively used for holding the first liquid source 10, the second liquid source 14, the third liquid source 15 and the fourth liquid source 16 from top to bottom, and the air inlet pipeline includes a first pipe section 18, a second pipe section 19 and a third pipe section 20 which are sequentially communicated from top to bottom. The liquid containing pool is of a wide and shallow structure, so that enough layers of liquid containing pools can be arranged in the same source bottle, and the total surface area of the liquid source exposed in the space is increased.
As shown by the arrows in fig. 2, the carrier gas enters the bottle body from the gas inlet 1 and is split above the first pipe section 18, one path of the carrier gas flows to the position above the first liquid source 10 through the gas inlet 17, the other path of the carrier gas continues to flow downwards through the first pipe section 18 to the position above the second pipe section 19 and continues to be split, flows to the position above the second liquid source 14 through the gas inlet 17 respectively, and flows downwards through the second pipe section 19 to the position above the third pipe section 20, then continues to be split, flows to the position above the third liquid source 15 through the gas inlet 17 respectively, and flows to the position above the fourth liquid source 16 through the third pipe section 20 and the gas inlet 17 respectively;
the carrier gas enters the upper part of the liquid source of each liquid containing pool through the air inlet hole 17, carries the gas source to form the converged gas 11 from the air outlet pipeline, and flows out from the air outlet 2.
In one embodiment of the invention, the first, second and third tube sections 18, 19, 20 are located on the same vertical plane adjacent to the side of their respective sumps.
The first pipe section 18 is arranged on the outer side of the first-layer liquid containing pool and is positioned below the air inlet 1; the second pipe section 19 is arranged on the outer side of the second layer of liquid containing pool, and the third pipe section 20 is arranged on the outer side of the third layer of liquid containing pool.
If the cross-sectional area of the air inlet 1 is A, the cross-sectional area of the first pipe section 18 is 3/4 times of the cross-sectional area A of the air inlet 1, and the cross-sectional area of the air inlet 17 is 1/4 times of the cross-sectional area A of the air inlet 1, the flow rate of carrier gas 1/4 entering from the air inlet 1 and divided by the air inlet 17 can be ensured, and the flow rate of carrier gas 3/4 is divided by the first pipe section 18;
by analogy, the cross-sectional area of the second pipe section 19 is 1/2 times of the cross-sectional area a of the air inlet 1, the cross-sectional area of the air inlet 17 above the second layer liquid containing pool is 1/4 times of the cross-sectional area a of the air inlet 1, the air inlet 17 divides the flow of the carrier gas into 1/4, and the second pipe section 19 divides the flow of the carrier gas into 1/2;
the cross-sectional area of the third pipe section 20 is 1/4 times of the cross-sectional area A of the air inlet 1, the cross-sectional area of the air inlet 17 above the third layer of liquid containing pool is 1/4 times of the cross-sectional area A of the air inlet 1, the air inlet 17 divides the flow of 1/4 of carrier gas, and the carrier gas also flows 1/4 downwards through the third pipe section 20 and is blown to the upper part of the fourth layer of liquid containing pool through the air inlet 17 above the fourth layer of liquid containing pool;
through the design that the cross sectional areas of all the air inlet holes 17 are the same, the air flow of the air blown to the air inlet holes 17 of each layer of the liquid containing pool is consistent. The gaseous source evaporated from the surfaces of the first liquid source 10, the second liquid source 14, the third liquid source 15 and the fourth liquid source 16 forms a merged gas 11 through the gas outlet pipeline under the driving of the carrier gas with the same flow rate, and then flows to the reaction chamber through the gas outlet 2 in the gas outlet direction 4. The gas outlet pipeline comprises a plurality of gas outlet pipe sections which are sequentially communicated from top to bottom, each gas outlet pipe section corresponds to one liquid containing pool except the liquid containing pool at the bottom, the plurality of gas outlet pipe sections are straight pipes, the cross sections of the gas outlet pipe sections are the same, the top of the side wall of each liquid containing pool is provided with a gas outlet hole, and the gas outlet holes are communicated with the gas outlet pipe sections above the gas outlet holes.
The liquid source bottle related by the invention is characterized in that a plurality of liquid containing pools are arranged in a bottle body to form a multilayer structure, the surface areas of the liquid sources in each liquid containing pool exposed in the space are accumulated to be far larger than the surface area of the liquid source of a single source bottle in the prior art, for the same liquid source, the evaporation amount of the source bottle in unit time is greatly increased compared with the evaporation amount of the source in the prior art, two or more source bottles do not need to be connected in parallel, the material cost of a machine table is reduced, and the maintenance difficulty of the machine table is reduced.
The air inlet pipeline and the air outlet pipeline are symmetrically arranged relative to the central axis of the bottle body.
Except for the liquid containing pool at the lowest part, the inner wall of each liquid containing pool is provided with a flow guide hole 13 penetrating through the bottom of the pool, and two adjacent liquid containing pools are communicated through the flow guide holes 13.
In an embodiment of the present invention, the longitudinal section of the diversion hole 13 is V-shaped, and may also be L-shaped, so that two adjacent liquid containing pools are communicated through the diversion hole 13.
The liquid source bottle also comprises a filling opening 8, and the liquid containing pools are all communicated with the filling opening 8.
In one embodiment of the present invention, the filling opening 8 is disposed in the middle of the top of the bottle body, and the liquid source bottle of the present invention is filled by a layer-by-layer filling method. During filling, a source bottle is placed as shown in figure 2, a liquid source is filled from a filling opening 8, the liquid source is filled with a liquid containing pool located on a first layer at first, then flows to the liquid containing pool located on a second layer through a guide pipe 13, flows to the liquid containing pool located on a third layer through the guide pipe 13 after the liquid containing pool located on the second layer is filled with liquid, and flows to the liquid containing pool located on a fourth layer through the guide pipe 13 after the liquid containing pool located on the third layer is filled with liquid.
The bottle body comprises a plurality of bottle body sections which are welded from top to bottom in sequence, and a liquid containing pool is arranged in each bottle body section;
the outer diameters of the plurality of bottle body sections are equal; and/or the presence of a gas in the gas,
the shapes and the sizes of the liquid containing pools are the same.
In one embodiment of the present invention, as shown in fig. 3, a plurality of body sections are separately processed and then connected by welding. Preferably, the welding is performed by electron beam welding along the abutting surfaces.
The invention also provides semiconductor process equipment comprising the liquid source bottle.
Having described embodiments of the present invention, the foregoing description is intended to be exemplary, not exhaustive, and not limited to the embodiments disclosed. Many modifications and variations will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the described embodiments.
Claims (10)
1. A liquid source bottle is used in semiconductor process equipment and is characterized by comprising a bottle body and a plurality of liquid containing pools which are sequentially arranged in the bottle body from top to bottom;
the top of the bottle body is provided with an air inlet (1) and an air outlet (2);
the liquid containing pools are respectively communicated with the air inlet (1) through air inlet pipelines and communicated with the air outlet (2) through air outlet pipelines.
2. The liquid source bottle as claimed in claim 1, wherein the air inlet pipeline comprises a plurality of air inlet pipe sections which are sequentially communicated from top to bottom, each air inlet pipe section corresponds to one liquid containing pool except the lowest liquid containing pool, and the cross-sectional area of the plurality of air inlet pipe sections from top to bottom is gradually reduced.
3. The liquid source bottle as claimed in claim 2, wherein the cross-sectional area of the ith tube segment from top to bottom is the cross-sectional area of the gas inlet (1)
Wherein i and N represent positive integers, i is more than or equal to 1 and less than N, and N represents the total number of the liquid containing pools.
4. The liquid source bottle as claimed in claim 1, wherein an air inlet hole (17) is respectively arranged at the top of the side wall of each liquid containing pool, the air inlet holes (17) are communicated with the air inlet pipeline, and the cross-sectional area of each air inlet hole (17) is equal to that of the air inlet (1)
N represents the total number of the liquid holding tanks.
5. The liquid source bottle as claimed in claim 1, wherein the gas outlet pipeline comprises a plurality of gas outlet pipe sections which are sequentially communicated from top to bottom, each gas outlet pipe section corresponds to one of the liquid holding pools except for the lowermost liquid holding pool, and the cross-sectional areas of the plurality of gas outlet pipe sections are the same; and the top of the side wall of each liquid containing pool is provided with an air outlet hole respectively, and the air outlet holes are communicated with the air outlet pipe sections above the air outlet holes.
6. The liquid source bottle of claim 1, wherein the gas inlet conduit and the gas outlet conduit are symmetrically disposed about a central axis of the bottle body.
7. The liquid source bottle as claimed in claim 1, further comprising a filling port (8), wherein a plurality of the liquid holding tanks are all communicated with the filling port (8).
8. The liquid source bottle as claimed in claim 1, wherein the inner wall of each liquid containing pool except the lowest liquid containing pool is provided with a diversion hole (13) penetrating through the bottom of the pool, and two adjacent liquid containing pools are communicated through the diversion holes (13).
9. The liquid source bottle as claimed in claim 1, wherein the bottle body comprises a plurality of bottle body sections welded in sequence from top to bottom, and each bottle body section is provided with one liquid containing pool therein;
the outer diameters of the plurality of bottle body segments are equal; and/or the presence of a gas in the gas,
the liquid containing pools are the same in shape and size.
10. A semiconductor processing apparatus, comprising a liquid source bottle according to any one of claims 1-10.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111342420.4A CN114277358B (en) | 2021-11-12 | 2021-11-12 | Liquid source bottle and semiconductor process equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111342420.4A CN114277358B (en) | 2021-11-12 | 2021-11-12 | Liquid source bottle and semiconductor process equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114277358A true CN114277358A (en) | 2022-04-05 |
| CN114277358B CN114277358B (en) | 2023-10-27 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111342420.4A Active CN114277358B (en) | 2021-11-12 | 2021-11-12 | Liquid source bottle and semiconductor process equipment |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104651806A (en) * | 2013-11-25 | 2015-05-27 | 朗姆研究公司 | Multi-tray ballast vapor draw system |
| CN205473974U (en) * | 2016-03-23 | 2016-08-17 | 安徽三安光电有限公司 | Metal organic compound container |
| US20160288155A1 (en) * | 2015-03-31 | 2016-10-06 | Kabushiki Kaisha Toshiba | Vaporizing system |
| US20170298507A1 (en) * | 2016-04-18 | 2017-10-19 | Samsung Electronics Co., Ltd. | Semiconductor Fabrication Apparatus Including a Plurality of Reaction Containers and Methods of Forming Layers on Semiconductor Substrate Using the Same |
| CN110885970A (en) * | 2018-09-11 | 2020-03-17 | 北京北方华创微电子装备有限公司 | Pressure stabilizing and purifying device for solid precursor vapor and ALD (atomic layer deposition) equipment |
| CN111286720A (en) * | 2018-12-10 | 2020-06-16 | 北京北方华创微电子装备有限公司 | Source bottle and semiconductor equipment |
-
2021
- 2021-11-12 CN CN202111342420.4A patent/CN114277358B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104651806A (en) * | 2013-11-25 | 2015-05-27 | 朗姆研究公司 | Multi-tray ballast vapor draw system |
| US20160288155A1 (en) * | 2015-03-31 | 2016-10-06 | Kabushiki Kaisha Toshiba | Vaporizing system |
| CN205473974U (en) * | 2016-03-23 | 2016-08-17 | 安徽三安光电有限公司 | Metal organic compound container |
| US20170298507A1 (en) * | 2016-04-18 | 2017-10-19 | Samsung Electronics Co., Ltd. | Semiconductor Fabrication Apparatus Including a Plurality of Reaction Containers and Methods of Forming Layers on Semiconductor Substrate Using the Same |
| CN110885970A (en) * | 2018-09-11 | 2020-03-17 | 北京北方华创微电子装备有限公司 | Pressure stabilizing and purifying device for solid precursor vapor and ALD (atomic layer deposition) equipment |
| CN111286720A (en) * | 2018-12-10 | 2020-06-16 | 北京北方华创微电子装备有限公司 | Source bottle and semiconductor equipment |
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| CN114277358B (en) | 2023-10-27 |
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