CN114247682A - Special post-cutting cleaning device and cleaning method for silicon carbide wafer - Google Patents

Special post-cutting cleaning device and cleaning method for silicon carbide wafer Download PDF

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Publication number
CN114247682A
CN114247682A CN202111412133.6A CN202111412133A CN114247682A CN 114247682 A CN114247682 A CN 114247682A CN 202111412133 A CN202111412133 A CN 202111412133A CN 114247682 A CN114247682 A CN 114247682A
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China
Prior art keywords
cleaning
wafer
automatic
manipulator
silicon carbide
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CN202111412133.6A
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Chinese (zh)
Inventor
陈辉
王升
卢晨
李有群
贺贤汉
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Anhui Microchip Changjiang Semiconductor Materials Co ltd
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Anhui Microchip Changjiang Semiconductor Materials Co ltd
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Priority to CN202111412133.6A priority Critical patent/CN114247682A/en
Publication of CN114247682A publication Critical patent/CN114247682A/en
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B1/00—Cleaning by methods involving the use of tools
    • B08B1/10—Cleaning by methods involving the use of tools characterised by the type of cleaning tool
    • B08B1/12—Brushes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B1/00—Cleaning by methods involving the use of tools
    • B08B1/30—Cleaning by methods involving the use of tools by movement of cleaning members over a surface
    • B08B1/32—Cleaning by methods involving the use of tools by movement of cleaning members over a surface using rotary cleaning members
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

The invention discloses a special post-slicing cleaning device and a special post-slicing cleaning method for a silicon carbide crystal, and the cleaning device comprises a groove type pre-cleaning function, an automatic slicing function, an automatic brushing function and an automatic sheet inserting function, and is suitable for a full-automatic cleaning method for the silicon carbide crystal after slicing. Therefore, the consistency of the cleaning effect of the cut silicon carbide crystal, the cleaning yield of the cut silicon carbide crystal and the traceability of the wafer can be effectively controlled. The cleaning method has the advantages of simple and convenient operation, high cleaning efficiency and good cleaning effect, is suitable for cleaning wafers after silicon carbide wafers are cut and produced in batches, and has great industrial applicability.

Description

Special post-cutting cleaning device and cleaning method for silicon carbide wafer
Technical Field
The invention relates to a special post-cutting cleaning device and a special post-cutting cleaning method for a silicon carbide wafer, in particular to a full-automatic cleaning device and a full-automatic cleaning method which are convenient for cleaning a wafer after multi-line cutting on a silicon carbide production line.
Background
The silicon carbide is taken as a representative of third-generation semiconductors, has the characteristics of large forbidden band width, high breakdown electric field, high saturated electron drift velocity, large heat conductivity and the like, and can be applied to a high-voltage environment of more than 1200 volts, so that the silicon carbide has obvious advantages in a severe environment; meanwhile, the SiC crystal is an ideal substrate material of GaN-based devices, such as LEDs and LDs, because the SiC crystal has a high matching lattice constant and thermal expansion coefficient with the epitaxial layer material GaN and good thermal conductivity. Therefore, SiC crystal materials have become indispensable substrate materials in the field of semiconductor lighting technology. Silicon carbide and silicon carbide-based semiconductor materials have become hot of research in various countries around the world.
The silicon carbide crystal is applied to a device to be processed into a wafer with a certain size, and the basic process comprises the steps of crystal growth, ingot detection, ingot shaping, slicing, marking, grinding, chamfering, polishing, CMP, cleaning and the like. Because the hardness of the silicon carbide crystal is high, great difficulty is brought to crystal processing, and the cutting of the SiC crystal bar into wafers with small warpage, uniform thickness and low cutting loss is very important for subsequent grinding and polishing. Compared with the traditional inner circle and outer circle cutting, the multi-line cutting has the advantages of high cutting speed, high processing precision, high efficiency, long service life and the like, and is widely applied to the high-efficiency cutting of the silicon carbide wafer.
At present, oily diamond powder mortar is generally adopted in the silicon carbide crystal industry for multi-line cutting. Moreover, in order to reduce the cutting cost, the mortar is usually recycled for several times, so that a large amount of mortar oil stains are adhered to the surface of the wafer cut in the later period, and the wafer is difficult to clean in batches. Therefore, the manual wiping method is generally adopted in the industry at present, slices are taken down from a cutting knife rest piece by piece, oil stains on the surface are wiped off, and then the slices are rinsed by alkali liquor. However, the cleaning method is long in time consumption, low in efficiency, high in wafer staggering and breaking rate and difficult to guarantee the cleaning effect due to manual operation in the whole process, and is not suitable for industrial mass production of silicon carbide wafers.
Disclosure of Invention
The invention aims to provide a special post-cutting cleaning device and a special post-cutting cleaning method for a silicon carbide wafer, so as to solve the problems in the background technology.
In order to achieve the purpose, the invention provides the following technical scheme: a special post-cutting cleaning device and a cleaning method for a silicon carbide wafer comprise a pre-cleaning mechanism, an automatic wafer separating mechanism, an automatic brushing mechanism and an automatic wafer inserting mechanism,
the pre-cleaning mechanism comprises a pre-cleaning tank, two oscillation rinsing tanks, a flushing tank and a degumming tank, wherein the upper part and the lower part of the pre-cleaning tank are respectively provided with a pair of strip-shaped spray headers, the bottom of the degumming tank is provided with a heating device, and the top of the degumming tank is provided with two material pressing rods;
the automatic slicing mechanism comprises a slicing module, a manipulator slice suction module and a manipulator slice transmission module;
the automatic brushing mechanism comprises a vacuum rotary carrying platform module, a brushing module, a piece turning manipulator module and a spin-drying mechanism;
the automatic sheet inserting mechanism comprises a sheet inserting mechanical arm module and a flower basket conversion module;
the cleaning method of the silicon carbide wafer by using the device is as follows:
s1, placing the cut crystal ingot and the tool rest into a material containing basket of a pre-washing groove of a pre-washing mechanism by a manipulator, inserting a separating sheet into a gap between the crystal ingot and the crystal ingot, and spraying and washing residual mortar on the surface of the cut crystal ingot and in a sheet gap for 5min by using a large amount of clean water;
s2, placing the tool rest and the material containing basket into a vibration rinsing tank by a manipulator, and carrying out vibration, ultrasonic treatment and rinsing for 10-15 min by using 10-30% Decon90 cleaning solution;
s3, placing the tool rest and the material containing basket into a vibration rinsing tank by a manipulator, and carrying out vibration, ultrasonic treatment and rinsing for 10-15 min by using 5-10% Decon90 cleaning solution;
s4, putting the tool rest and the material containing basket into a showering groove by a manipulator, showering the rinsed crystal ingot with clear water for 5 min;
s5, placing the tool rest and the material containing basket into a degumming tank by a manipulator, soaking the crystal ingot in hot water at 60-80 ℃ for 10-15 min, uniformly pressurizing by a material pressing rod to completely degum the wafer, and dropping the wafer into the material containing basket;
s6, removing the head and tail of each ingot according to the sequence of the ingot, and moving the material containing basket into the automatic slicing mechanism;
s7, the automatic slicing mechanism separates each wafer of each crystal ingot in turn, and the wafer suction manipulator sucks each separated wafer and transmits the wafer to the automatic brushing mechanism;
s8, sequentially grabbing the wafers onto a vacuum rotating carrying platform by the automatic brushing mechanism manipulator, spraying 1-5% Decon90 cleaning solution, moving the vertical rotating brush to the surface of the wafer, and brushing at the speed of 50rpm for 3S; the manipulator overturns the wafer, and the back of the wafer is brushed for 3 s; drying the wafer at high speed;
and S9, the automatic sheet inserting mechanism inserts the cleaned wafers into the sheet inserting flower basket according to the ingot numbers.
Preferably, the slicing module is a vertical jet slicing system special for silicon carbide.
Preferably, the brushing module is an upright rotating brush arrangement.
Compared with the prior art, the invention has the beneficial effects that: according to the cleaning device and the cleaning method, full-automatic cleaning of the silicon carbide crystal after cutting can be realized, the fragment rate and the number mixing rate in the manual scrubbing process are effectively reduced, and the efficiency of cleaning the cut wafer is effectively improved. The invention has the advantages of high practicability, high precision, high efficiency and low fragment rate.
Drawings
FIG. 1 is a schematic view of the structure of the present invention.
In the figure: the device comprises a pre-cleaning mechanism 1, an automatic slicing mechanism 2, an automatic scrubbing mechanism 3, an automatic inserting mechanism 4, a pre-cleaning tank 5, a first oscillation rinsing tank 6, a second oscillation rinsing tank 7, a shower tank 8, a degumming tank 9, a water flow jet slicing device 10, a manipulator adsorption device 11, a vacuum rotary suction table 12, a vertical rotary hairbrush 13 and a basket carrying table 14.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1, the present invention provides a technical solution: a cleaning device and a cleaning method after cutting special for a silicon carbide wafer are provided, the cleaning device comprises a pre-cleaning mechanism 1, an automatic slicing mechanism 2, an automatic brushing mechanism 3 and an automatic sheet inserting mechanism 4;
the pre-cleaning mechanism 1 comprises a pre-cleaning tank 5, a first oscillation rinsing tank 6, a second oscillation rinsing tank 7, a showering tank 8 and a degumming tank 9;
the upper part and the lower part of the pre-washing tank 5 are respectively provided with a pair of strip-shaped spray headers, the water pressure is adjustable, residual mortar between the wafers is washed away as far as possible on the premise of not damaging the wafers, the QDR quick discharge is arranged at the bottom of the pre-washing tank 5, and the sewage after washing is quickly discharged;
the vibration rinsing tank I6 uses kerosene or Decon90 cleaning solution to vibrate and rinse the cut crystal ingot according to the oily or aqueous cutting property, and an ultrasonic generator is arranged at the bottom of the vibration rinsing tank I6 to enhance the cleaning effect;
the second oscillation cleaning tank 7 uses a Decon cleaning solution to carry out secondary oscillation and rinsing on the rinsed crystal ingot;
the rinsing bath 8 washes the cut crystal ingot with clear water to remove residual cleaning solution and surface stains;
a heating device is arranged at the bottom of the degumming tank 9, the water temperature is controlled to be 60-80 ℃, two material pressing rods are arranged at the top of the degumming tank 9, the circumference of the bonding part of the crystal rods is uniformly pressurized, and the wafers are more effectively helped to smoothly fall into the wafer holding basket;
the automatic slicing mechanism 2 comprises a water flow jet slicing mechanism 10, a manipulator adsorption mechanism 11 and a manipulator transmission mechanism; the automatic slicing mechanism 2 adopts a stepping transmission mode and combines vertical jet flow. Therefore, the stable separation between the wafers can be ensured, and the lamination condition is avoided; the manipulator adsorption 11 and the conduction mechanism need to have independent single-action and linkage modes. Thus, the situation of full-line shutdown after fragment alarm in the adsorption and conduction processes can be avoided
The automatic scrubbing machine 3 mechanism comprises a vacuum rotary carrying platform, a scrubbing module, a slice turning manipulator and a spin-drying mechanism; the brushing module is a vertical rotary hairbrush 13, and the vertical rotary hairbrush 13 is a PET long-hair nylon brush. The brush made of the material is corrosion resistant and has long service life; the rotating speed of the vertical rotating brush is 30-60 rpm, the rotating speed of the vacuum rotating carrying platform is 120-180 rpm, and the rotating speed configuration can achieve a better brushing result; the spin-drying mechanism needs to have independent single-action and linkage modes. Therefore, the condition of full-line shutdown after fragment breakage alarm in the spin-drying process can be avoided.
The automatic inserting mechanism 4 comprises an inserting mechanical arm and a flower basket carrying platform 14. The automatic wafer inserting mechanical arm is used for moving the wafer on the vacuum rotating carrying platform to the spin-drying mechanism for fast spin-drying, and finally the spin-dried wafer is inserted into the wafer inserting flower basket carrying platform 14 once through the wafer inserting mechanical arm.
The cleaning method of the silicon carbide wafer by using the device is as follows:
the silicon carbide ingot used in the present invention is a 4H single crystal, which can be grown by a conventional PVT method or commercially available. The specifications of the ingots used may vary, and a 6-inch 4H semi-insulating type ingot is used as an example below. The cutting fluid adopted is water-based diamond cutting fluid. It should be understood that other specifications of the silicon carbide ingot and cutting fluid are also suitable.
S1, placing the cut crystal ingot and the tool rest into a material containing basket of a pre-washing groove of a pre-washing mechanism by a manipulator, inserting a separating sheet into a gap between the crystal ingot and the crystal ingot, and spraying and washing residual mortar on the surface of the cut crystal ingot and in a sheet gap for 5min by using a large amount of clean water;
s2, placing the tool rest and the material containing basket into a first oscillation rinsing groove by a manipulator, and oscillating, ultrasonically rinsing for 10-15 min by 10-30% Decon90 cleaning solution;
s3, placing the tool rest and the material containing basket into a second vibration rinsing tank by the manipulator, and carrying out vibration, ultrasonic treatment and rinsing for 10-15 min by using 5-10% Decon90 cleaning solution;
s4, putting the tool rest and the material containing basket into a showering groove by a manipulator, showering the rinsed crystal ingot with clear water for 5 min;
s5, placing the tool rest and the material containing basket into a degumming tank by a manipulator, soaking the crystal ingot in hot water at 60-80 ℃ for 10-15 min, uniformly pressurizing by a material pressing rod to completely degum the wafer, and dropping the wafer into the material containing basket;
s6, removing the head and tail of each ingot according to the sequence of the ingot, and moving the material containing basket into the automatic slicing mechanism;
s7, the automatic slicing mechanism separates each wafer of each crystal ingot in turn, and the wafer suction manipulator sucks each separated wafer and transmits the wafer to the automatic brushing mechanism;
s8, sequentially grabbing the wafers onto a vacuum rotating carrying platform by the automatic brushing mechanism manipulator, spraying 1-5% Decon90 cleaning solution, moving the vertical rotating brush to the surface of the wafer, and brushing at the speed of 50rpm for 3S; the manipulator overturns the wafer, and the back of the wafer is brushed for 3 s; drying the wafer at high speed;
and S9, the automatic sheet inserting mechanism inserts the cleaned wafers into the sheet inserting flower basket according to the ingot numbers.
Table 1 shows some comparisons of the effects of conventional post-cut cleaning of silicon carbide crystals with post-cut cleaning according to the present invention. The method for cleaning the silicon carbide crystal after cutting has the advantages of high practicability, high precision, high efficiency, low fragment rate and good cleaning effect.
Table 1: the effect of the conventional silicon carbide cleaning after cutting is compared with that of the invention
Cleaning mode Cleaning efficiency Cleaning effect
Conventional cleaning Manually operated scrubbing 50 tablets/hour Has residual mortar particles
The invention Automatic scrubbing 500 tablets/hour No visible particles
Industrial applicability:
the silicon carbide crystal cut cleaning device is high in automation degree, and effectively avoids the problems of fragment breaking and fragment mixing during manual operation. The cleaning method has the advantages of simple and convenient operation, high cleaning efficiency and good cleaning effect, is suitable for cleaning wafers after silicon carbide wafers are cut and produced in batches, and has great industrial applicability.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.

Claims (3)

1. A special post-cutting cleaning device and a cleaning method for a silicon carbide wafer are characterized in that: the cleaning device comprises a pre-cleaning mechanism, an automatic sheet separating mechanism, an automatic brushing mechanism and an automatic sheet inserting mechanism,
the pre-cleaning mechanism comprises a pre-cleaning tank, a first oscillation rinsing tank, a second oscillation rinsing tank, a shower tank and a degumming tank, wherein the upper part and the lower part of the pre-cleaning tank are respectively provided with a pair of strip-shaped spray headers, the bottom of the degumming tank is provided with a heating device, and the top of the degumming tank is provided with two material pressing rods;
the automatic slicing mechanism comprises a slicing module, a manipulator slice suction module and a manipulator slice transmission module;
the automatic brushing mechanism comprises a vacuum rotary carrying platform, a brushing module, a piece turning manipulator module and a spin-drying mechanism;
the automatic sheet inserting mechanism comprises a sheet inserting mechanical arm module and a flower basket conversion module;
the cleaning method of the silicon carbide wafer by using the device is as follows:
s1, placing the cut crystal ingot and the tool rest into a material containing basket of a pre-washing groove of a pre-washing mechanism by a manipulator, inserting a separating sheet into a gap between the crystal ingot and the crystal ingot, and spraying and washing residual mortar on the surface of the cut crystal ingot and in a sheet gap for 5min by using a large amount of clean water;
s2, placing the tool rest and the material containing basket into a first oscillation rinsing groove by a manipulator, and oscillating, ultrasonically rinsing for 10-15 min by 10-30% Decon90 cleaning solution;
s3, placing the tool rest and the material containing basket into a second vibration rinsing tank by the manipulator, and carrying out vibration, ultrasonic treatment and rinsing for 10-15 min by using 5-10% Decon90 cleaning solution;
s4, putting the tool rest and the material containing basket into a showering groove by a manipulator, showering the rinsed crystal ingot with clear water for 5 min;
s5, placing the tool rest and the material containing basket into a degumming tank by a manipulator, soaking the crystal ingot in hot water at 60-80 ℃ for 10-15 min, uniformly pressurizing by a material pressing rod to completely degum the wafer, and dropping the wafer into the material containing basket;
s6, removing the head and tail of each ingot according to the sequence of the ingot, and moving the material containing basket into the automatic slicing mechanism;
s7, the automatic slicing mechanism separates each wafer of each crystal ingot in turn, and the wafer suction manipulator sucks each separated wafer and transmits the wafer to the automatic brushing mechanism;
s8, sequentially grabbing the wafers onto a vacuum rotating carrying platform by the automatic brushing mechanism manipulator, spraying 1-5% Decon90 cleaning solution, moving the vertical rotating brush to the surface of the wafer, and brushing at the speed of 50rpm for 3S; the manipulator overturns the wafer, and the back of the wafer is brushed for 3 s; drying the wafer at high speed;
and S9, the automatic sheet inserting mechanism inserts the cleaned wafers into the sheet inserting flower basket according to the ingot numbers.
2. The special post-cut cleaning device and cleaning method for the silicon carbide wafer according to claim 1, wherein the cleaning device comprises: the slicing module is a vertical jet slicing system special for silicon carbide.
3. The special post-cut cleaning device and cleaning method for the silicon carbide wafer according to claim 1, wherein the cleaning device comprises: the brushing module is a vertical rotary brush mechanism.
CN202111412133.6A 2021-11-25 2021-11-25 Special post-cutting cleaning device and cleaning method for silicon carbide wafer Pending CN114247682A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114559571A (en) * 2022-04-14 2022-05-31 乐山高测新能源科技有限公司 Silicon wafer production system

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CN103551344A (en) * 2013-11-01 2014-02-05 苏州辰轩光电科技有限公司 Full-automatic washing machine
CN110379747A (en) * 2019-08-14 2019-10-25 常州科沛达清洗技术股份有限公司 Full-automatic wafer piece cleans patch all-in-one machine
CN111318500A (en) * 2020-02-03 2020-06-23 徐州鑫晶半导体科技有限公司 Degumming device and method for cut silicon rod
CN112735971A (en) * 2019-10-14 2021-04-30 天津环博科技有限责任公司 Vertical slicing mechanism for underwater silicon wafers
CN112775138A (en) * 2021-01-09 2021-05-11 拓思精工科技(苏州)有限公司 Wafer double-side scrubbing equipment

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009098042A1 (en) * 2008-02-06 2009-08-13 Meyer Burger Ag Device for cleaning flat substrates
CN102327882A (en) * 2011-08-12 2012-01-25 无锡尚品太阳能电力科技有限公司 Cleaning process of monocrystalline silicon wafer
CN103464418A (en) * 2013-09-18 2013-12-25 天津市环欧半导体材料技术有限公司 Semiconductor silicon chip degumming process
CN103551344A (en) * 2013-11-01 2014-02-05 苏州辰轩光电科技有限公司 Full-automatic washing machine
CN110379747A (en) * 2019-08-14 2019-10-25 常州科沛达清洗技术股份有限公司 Full-automatic wafer piece cleans patch all-in-one machine
CN112735971A (en) * 2019-10-14 2021-04-30 天津环博科技有限责任公司 Vertical slicing mechanism for underwater silicon wafers
CN111318500A (en) * 2020-02-03 2020-06-23 徐州鑫晶半导体科技有限公司 Degumming device and method for cut silicon rod
CN112775138A (en) * 2021-01-09 2021-05-11 拓思精工科技(苏州)有限公司 Wafer double-side scrubbing equipment

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114559571A (en) * 2022-04-14 2022-05-31 乐山高测新能源科技有限公司 Silicon wafer production system
CN115008621A (en) * 2022-04-14 2022-09-06 乐山高测新能源科技有限公司 Silicon wafer production system

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