CN111430222A - Production process of flexible monocrystalline silicon wafer - Google Patents

Production process of flexible monocrystalline silicon wafer Download PDF

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Publication number
CN111430222A
CN111430222A CN202010303076.7A CN202010303076A CN111430222A CN 111430222 A CN111430222 A CN 111430222A CN 202010303076 A CN202010303076 A CN 202010303076A CN 111430222 A CN111430222 A CN 111430222A
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weight
parts
silicon wafer
cutting
temperature
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徐爱阳
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Yangzhou Rongxingda Photoelectric Technology Co ltd
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Yangzhou Rongxingda Photoelectric Technology Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • C—CHEMISTRY; METALLURGY
    • C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
    • C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
    • C10M173/00—Lubricating compositions containing more than 10% water
    • C10M173/02—Lubricating compositions containing more than 10% water not containing mineral or fatty oils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02021—Edge treatment, chamfering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
    • C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
    • C10M2201/00—Inorganic compounds or elements as ingredients in lubricant compositions
    • C10M2201/085—Phosphorus oxides, acids or salts
    • C—CHEMISTRY; METALLURGY
    • C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
    • C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
    • C10M2201/00—Inorganic compounds or elements as ingredients in lubricant compositions
    • C10M2201/10—Compounds containing silicon
    • C10M2201/102—Silicates
    • C—CHEMISTRY; METALLURGY
    • C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
    • C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
    • C10M2207/00—Organic non-macromolecular hydrocarbon compounds containing hydrogen, carbon and oxygen as ingredients in lubricant compositions
    • C10M2207/02—Hydroxy compounds
    • C10M2207/021—Hydroxy compounds having hydroxy groups bound to acyclic or cycloaliphatic carbon atoms
    • C10M2207/022—Hydroxy compounds having hydroxy groups bound to acyclic or cycloaliphatic carbon atoms containing at least two hydroxy groups
    • C—CHEMISTRY; METALLURGY
    • C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
    • C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
    • C10M2219/00—Organic non-macromolecular compounds containing sulfur, selenium or tellurium as ingredients in lubricant compositions
    • C10M2219/04—Organic non-macromolecular compounds containing sulfur, selenium or tellurium as ingredients in lubricant compositions containing sulfur-to-oxygen bonds, i.e. sulfones, sulfoxides
    • C10M2219/044—Sulfonic acids, Derivatives thereof, e.g. neutral salts
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Manufacturing & Machinery (AREA)
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  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

The invention relates to a production process of a flexible monocrystalline silicon wafer in the field of silicon wafer production and manufacturing, which comprises preparing cutting liquid, proportioning the cutting liquid, mixing and modulating the cutting liquid, wherein the cutting liquid comprises 2-10 parts by weight of petroleum sodium sulfonate, 2-5 parts by weight of sodium metasilicate, 2-3 parts by weight of sodium phosphate, 3-5 parts by weight of ethylene glycol, 0.5-2 parts by weight of an organic silicon defoamer, 2-5 parts by weight of petroleum sodium sulfonate, 5-30 parts by weight of emulsified oil and 20-30 parts by weight of water; mixing the cutting fluid and silicon carbide according to the ratio of 1:0.8-0.85, mixing and modulating in a reaction kettle at the temperature of 20-25 ℃, adding a catalyst, continuously reacting for 2-3h, pouring out, standing, and keeping for 5-10 h; the solar silicon wafer manufactured by the invention has high efficiency, low cost and higher processing precision, effectively avoids the damage to the silicon wafer and reduces the cost.

Description

Production process of flexible monocrystalline silicon wafer
Technical Field
The invention relates to the field of silicon wafer production and manufacturing, in particular to a silicon wafer production process.
Background
With the continuous reduction of the characteristic size of a semiconductor, the requirement of the semiconductor industry on the surface defect of a small silicon wafer is higher and higher; the semiconductor industry has higher and higher requirements on defects on the front side of the silicon wafer and also has more and more rigorous requirements on defects on the back side and edge of the silicon wafer; semiconductor wafers are the main substrate material of modern very large scale integrated circuits and are generally manufactured by processes such as crystal pulling, slicing, chamfering, lapping (including grinding and lapping), etching, polishing, cleaning and the like. The grinding process after chamfering can enable the silicon wafer to obtain a shape with higher precision, and the processing precision of the grinding process directly influences the geometric parameters of the product; therefore, the selection of a highly accurate processing method is very important, so that the quality of products and the working efficiency thereof can be greatly improved, and a large amount of cost is reduced.
Disclosure of Invention
The invention aims to provide a production process of a flexible monocrystalline silicon wafer, and the solar silicon wafer manufactured by the invention has the advantages of high efficiency, low cost and high processing precision, effectively avoids the damage to the silicon wafer and reduces the cost.
A process for producing a flexible monocrystalline silicon wafer comprises
The method comprises the following steps: preparing cutting liquid, proportioning the cutting liquid, mixing and preparing the cutting liquid, wherein the cutting liquid comprises 2-10 parts by weight of petroleum sodium sulfonate, 2-5 parts by weight of sodium metasilicate, 2-3 parts by weight of sodium phosphate, 3-5 parts by weight of ethylene glycol, 0.5-2 parts by weight of an organic silicon defoamer, 2-5 parts by weight of petroleum sodium sulfonate, 5-30 parts by weight of emulsified oil and 20-30 parts by weight of water;
step two: mixing the cutting fluid and silicon carbide according to the ratio of 1:0.8-0.85, mixing and modulating in a reaction kettle at the temperature of 20-25 ℃, adding a catalyst, continuously reacting for 2-3h, pouring out, standing, and keeping for 5-10 h;
step three: starting the silicon wafer grinding wheel, pouring part of cutting fluid, and grinding the upper surface and the lower surface of the silicon wafer respectively by matching with the silicon wafer grinding wheel, wherein the removal amount is kept at 10-50 microns; ensuring that a plurality of grooves on the same surface are mutually parallel, and ensuring that the upper surface and the lower surface of the silicon wafer are mutually parallel;
step four: starting the slicing machine, pouring the rest cutting fluid for circulation, matching with the slicing machine to cut the silicon wafer, controlling the cutting speed at 508-;
step five: during fine grinding treatment, the upper surface is treated firstly, and then the lower surface is treated, wherein the removal amount is kept at 2-5 microns;
step six: carrying out alkaline etching after double-side grinding, wherein the removal amount is controlled between 02 and 0.5 micron;
step seven: degumming the cut silicon wafer, carrying out coarse washing by spraying deionized water for 5-10min, standing for 5-10min after spraying, carrying out secondary spraying for 10-15min, and controlling the temperature of the spraying liquid at 60-70 ℃;
step eight: carrying out slicing and column inserting on the silicon wafer, simultaneously carrying out spray washing, and then carrying out high-temperature drying, wherein the drying temperature is kept at 100 +/-10 ℃, and the drying time is controlled at 50+3 min;
step nine: detecting finished products, taking off unqualified products, then collecting the products, and warehousing and storing the qualified products.
In a further embodiment, in order to ensure that the working efficiency in the third step and the fourth step is high, the work is stable; the grinding temperature of the silicon wafer grinding wheel in the third step is controlled to be 20-50 ℃, and the cutting temperature of the slicing machine in the fourth step is controlled to be 20-30 ℃.
In a further embodiment, in order to ensure stable deionization in the step seven, the efficiency is high; in the seventh step, the deionized water is made of tap water, and the deionized water is filtered through quartz sand to remove impurities with thicker particles; then passing through a reverse osmosis membrane under high pressure; finally, ultraviolet sterilization is carried out to remove microorganisms in the water to obtain the final deionized water.
In a further embodiment, in order to ensure that the cutting efficiency in the fourth step is high, the cutting effect is good; and the cutting wire of the slicer in the fourth step is cut back and forth in two directions.
In a further embodiment, in order to ensure that the step of the hexa-alkaline etching has good effect and high efficiency; in the sixth step, the alkali etching is adopted, wherein the alkali washing temperature is 50 +/-5 ℃, and the alkali washing time is 20 +/-5 ℃; the ultrasonic frequency is 50 +/-5 Hz.
The solar silicon wafer manufactured by the method has the advantages of high efficiency, low cost and high processing precision, effectively avoids damage to the silicon wafer and reduces the cost.
The cutting fluid is prepared and proportioned, and comprises 2-10 parts by weight of petroleum sodium sulfonate, 2-5 parts by weight of sodium metasilicate, 2-3 parts by weight of sodium phosphate, 3-5 parts by weight of ethylene glycol, 0.5-2 parts by weight of an organic silicon defoamer, 2-5 parts by weight of petroleum sodium sulfonate, 5-30 parts by weight of emulsified oil and 20-30 parts by weight of water, and then the components are mixed and prepared; mixing the cutting fluid and silicon carbide according to the ratio of 1:0.8-0.85, mixing and modulating in a reaction kettle at the temperature of 20-25 ℃, adding a catalyst, continuously reacting for 2-3h, pouring out, standing, and keeping for 5-10 h; starting the silicon wafer grinding wheel, pouring part of cutting fluid, and grinding the upper surface and the lower surface of the silicon wafer respectively by matching with the silicon wafer grinding wheel, wherein the removal amount is kept at 10-50 microns; ensuring that a plurality of grooves on the same surface are mutually parallel, and ensuring that the upper surface and the lower surface of the silicon wafer are mutually parallel; starting the slicing machine, pouring the rest cutting fluid for circulation, matching with the slicing machine to cut the silicon wafer, controlling the cutting speed at 508-; during fine grinding treatment, the upper surface is treated firstly, and then the lower surface is treated, wherein the removal amount is kept at 2-5 microns; carrying out alkaline etching after double-side grinding, wherein the removal amount is controlled between 02 and 0.5 micron; degumming the cut silicon wafer, carrying out coarse washing by spraying deionized water for 5-10min, standing for 5-10min after spraying, carrying out secondary spraying for 10-15min, and controlling the temperature of the spraying liquid at 60-70 ℃; carrying out slicing and column inserting on the silicon wafer, simultaneously carrying out spray washing, and then carrying out high-temperature drying, wherein the drying temperature is kept at 100 +/-10 ℃, and the drying time is controlled at 50+3 min; detecting finished products, taking off unqualified products, then collecting the products, and warehousing and storing the qualified products.
Detailed Description
A process for producing a flexible monocrystalline silicon wafer comprises
The method comprises the following steps: preparing cutting liquid, proportioning the cutting liquid, mixing and preparing the cutting liquid, wherein the cutting liquid comprises 2-10 parts by weight of petroleum sodium sulfonate, 2-5 parts by weight of sodium metasilicate, 2-3 parts by weight of sodium phosphate, 3-5 parts by weight of ethylene glycol, 0.5-2 parts by weight of an organic silicon defoamer, 2-5 parts by weight of petroleum sodium sulfonate, 5-30 parts by weight of emulsified oil and 20-30 parts by weight of water;
step two: mixing the cutting fluid and silicon carbide according to the ratio of 1:0.8-0.85, mixing and modulating in a reaction kettle at the temperature of 20-25 ℃, adding a catalyst, continuously reacting for 2-3h, pouring out, standing, and keeping for 5-10 h;
step three: starting the silicon wafer grinding wheel, pouring part of cutting fluid, and grinding the upper surface and the lower surface of the silicon wafer respectively by matching with the silicon wafer grinding wheel, wherein the removal amount is kept at 10-50 microns; ensuring that a plurality of grooves on the same surface are mutually parallel, and ensuring that the upper surface and the lower surface of the silicon wafer are mutually parallel;
step four: starting the slicing machine, pouring the rest cutting fluid for circulation, matching with the slicing machine to cut the silicon wafer, controlling the cutting speed at 508-;
step five: during fine grinding treatment, the upper surface is treated firstly, and then the lower surface is treated, wherein the removal amount is kept at 2-5 microns;
step six: carrying out alkaline etching after double-side grinding, wherein the removal amount is controlled between 02 and 0.5 micron;
step seven: degumming the cut silicon wafer, carrying out coarse washing by spraying deionized water for 5-10min, standing for 5-10min after spraying, carrying out secondary spraying for 10-15min, and controlling the temperature of the spraying liquid at 60-70 ℃;
step eight: carrying out slicing and column inserting on the silicon wafer, simultaneously carrying out spray washing, and then carrying out high-temperature drying, wherein the drying temperature is kept at 100 +/-10 ℃, and the drying time is controlled at 50+3 min;
step nine: detecting finished products, taking off unqualified products, then collecting the products, and warehousing and storing the qualified products.
The working efficiency in the third step and the fourth step is high, and the work is stable; the grinding temperature of the silicon wafer grinding wheel in the third step is controlled to be 20-50 ℃, and the cutting temperature of the slicing machine in the fourth step is controlled to be 20-30 ℃.
The deionization work in the seventh step is stable and high in efficiency; in the seventh step, the deionized water is made of tap water, and the deionized water is filtered through quartz sand to remove impurities with thicker particles; then passing through a reverse osmosis membrane under high pressure; finally, ultraviolet sterilization is carried out to remove microorganisms in the water to obtain the final deionized water.
The cutting efficiency in the fourth step is high, and the cutting effect is good; and the cutting wire of the slicer in the fourth step is cut back and forth in two directions.
The step of six-alkali etching has good effect and high efficiency; in the sixth step, the alkali etching is adopted, wherein the alkali washing temperature is 50 +/-5 ℃, and the alkali washing time is 20 +/-5 ℃; the ultrasonic frequency is 50 +/-5 Hz.
The cutting fluid is prepared and proportioned, and comprises 2-10 parts by weight of petroleum sodium sulfonate, 2-5 parts by weight of sodium metasilicate, 2-3 parts by weight of sodium phosphate, 3-5 parts by weight of ethylene glycol, 0.5-2 parts by weight of an organic silicon defoamer, 2-5 parts by weight of petroleum sodium sulfonate, 5-30 parts by weight of emulsified oil and 20-30 parts by weight of water, and then the components are mixed and prepared; mixing the cutting fluid and silicon carbide according to the ratio of 1:0.8-0.85, mixing and modulating in a reaction kettle at the temperature of 20-25 ℃, adding a catalyst, continuously reacting for 2-3h, pouring out, standing, and keeping for 5-10 h; starting the silicon wafer grinding wheel, pouring part of cutting fluid, and grinding the upper surface and the lower surface of the silicon wafer respectively by matching with the silicon wafer grinding wheel, wherein the removal amount is kept at 10-50 microns; ensuring that a plurality of grooves on the same surface are mutually parallel, and ensuring that the upper surface and the lower surface of the silicon wafer are mutually parallel; starting the slicing machine, pouring the rest cutting fluid for circulation, matching with the slicing machine to cut the silicon wafer, controlling the cutting speed at 508-; during fine grinding treatment, the upper surface is treated firstly, and then the lower surface is treated, wherein the removal amount is kept at 2-5 microns; carrying out alkaline etching after double-side grinding, wherein the removal amount is controlled between 02 and 0.5 micron; degumming the cut silicon wafer, carrying out coarse washing by spraying deionized water for 5-10min, standing for 5-10min after spraying, carrying out secondary spraying for 10-15min, and controlling the temperature of the spraying liquid at 60-70 ℃; carrying out slicing and column inserting on the silicon wafer, simultaneously carrying out spray washing, and then carrying out high-temperature drying, wherein the drying temperature is kept at 100 +/-10 ℃, and the drying time is controlled at 50+3 min; detecting finished products, taking off unqualified products, then collecting the products, and warehousing and storing the qualified products.
The above description is only a preferred embodiment of the present invention, and the protection scope of the present invention is not limited to the above embodiments, and all technical solutions belonging to the idea of the present invention belong to the protection scope of the present invention. It should be noted that modifications and embellishments within the scope of the invention may be made by those skilled in the art without departing from the principle of the invention, and such modifications should also be considered as within the scope of the invention.

Claims (5)

1. A process for producing a flexible monocrystalline silicon wafer comprises
The method comprises the following steps: preparing cutting liquid, proportioning the cutting liquid, mixing and preparing the cutting liquid, wherein the cutting liquid comprises 2-10 parts by weight of petroleum sodium sulfonate, 2-5 parts by weight of sodium metasilicate, 2-3 parts by weight of sodium phosphate, 3-5 parts by weight of ethylene glycol, 0.5-2 parts by weight of an organic silicon defoamer, 2-5 parts by weight of petroleum sodium sulfonate, 5-30 parts by weight of emulsified oil and 20-30 parts by weight of water;
step two: mixing the cutting fluid and silicon carbide according to the ratio of 1:0.8-0.85, mixing and modulating in a reaction kettle at the temperature of 20-25 ℃, adding a catalyst, continuously reacting for 2-3h, pouring out, standing, and keeping for 5-10 h;
step three: starting the silicon wafer grinding wheel, pouring part of cutting fluid, and grinding the upper surface and the lower surface of the silicon wafer respectively by matching with the silicon wafer grinding wheel, wherein the removal amount is kept at 10-50 microns; ensuring that a plurality of grooves on the same surface are mutually parallel, and ensuring that the upper surface and the lower surface of the silicon wafer are mutually parallel;
step four: starting the slicing machine, pouring the rest cutting fluid for circulation, matching with the slicing machine to cut the silicon wafer, controlling the cutting speed at 508-;
step five: during fine grinding treatment, the upper surface is treated firstly, and then the lower surface is treated, wherein the removal amount is kept at 2-5 microns;
step six: carrying out alkaline etching after double-side grinding, wherein the removal amount is controlled between 02 and 0.5 micron;
step seven: degumming the cut silicon wafer, carrying out coarse washing by spraying deionized water for 5-10min, standing for 5-10min after spraying, carrying out secondary spraying for 10-15min, and controlling the temperature of the spraying liquid at 60-70 ℃;
step eight: carrying out slicing and column inserting on the silicon wafer, simultaneously carrying out spray washing, and then carrying out high-temperature drying, wherein the drying temperature is kept at 100 +/-10 ℃, and the drying time is controlled at 50+3 min;
step nine: detecting finished products, taking off unqualified products, then collecting the products, and warehousing and storing the qualified products.
2. The process according to claim 1, wherein the process comprises the steps of: the grinding temperature of the silicon wafer grinding wheel in the third step is controlled to be 20-50 ℃, and the cutting temperature of the slicing machine in the fourth step is controlled to be 20-30 ℃.
3. The process according to claim 1, wherein the process comprises the steps of: in the seventh step, the deionized water is made of tap water, and the deionized water is filtered through quartz sand to remove impurities with thicker particles; then passing through a reverse osmosis membrane under high pressure; finally, ultraviolet sterilization is carried out to remove microorganisms in the water to obtain the final deionized water.
4. The process according to claim 1, wherein the process comprises the steps of: and the cutting wire of the slicer in the fourth step is cut back and forth in two directions.
5. The process according to claim 4, wherein the process comprises the steps of: in the sixth step, the alkali etching is adopted, wherein the alkali washing temperature is 50 +/-5 ℃, and the alkali washing time is 20 +/-5 ℃; the ultrasonic frequency is 50 +/-5 Hz.
CN202010303076.7A 2020-04-17 2020-04-17 Production process of flexible monocrystalline silicon wafer Pending CN111430222A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115383534A (en) * 2022-09-13 2022-11-25 成都青洋电子材料有限公司 Production process of monocrystalline silicon wafer

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999035220A1 (en) * 1998-01-09 1999-07-15 Nof Corporation Aqueous cutting fluid, aqueous cutting agent, and process for cutting hard brittle materials with the same
JP2000327838A (en) * 1999-05-18 2000-11-28 Super Silicon Kenkyusho:Kk Aqueous grinding liquid for wire saw or handsaw
CN102528597A (en) * 2010-12-08 2012-07-04 有研半导体材料股份有限公司 Manufacturing process of large-diameter silicon wafer
CN104972570A (en) * 2015-05-29 2015-10-14 阳光硅峰电子科技有限公司 Process for manufacturing polycrystalline silicon chips
CN108831966A (en) * 2018-07-06 2018-11-16 安徽腾奎智能科技有限公司 A kind of cleaning solution for photovoltaic cell board group

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999035220A1 (en) * 1998-01-09 1999-07-15 Nof Corporation Aqueous cutting fluid, aqueous cutting agent, and process for cutting hard brittle materials with the same
JP2000327838A (en) * 1999-05-18 2000-11-28 Super Silicon Kenkyusho:Kk Aqueous grinding liquid for wire saw or handsaw
CN102528597A (en) * 2010-12-08 2012-07-04 有研半导体材料股份有限公司 Manufacturing process of large-diameter silicon wafer
CN104972570A (en) * 2015-05-29 2015-10-14 阳光硅峰电子科技有限公司 Process for manufacturing polycrystalline silicon chips
CN108831966A (en) * 2018-07-06 2018-11-16 安徽腾奎智能科技有限公司 A kind of cleaning solution for photovoltaic cell board group

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115383534A (en) * 2022-09-13 2022-11-25 成都青洋电子材料有限公司 Production process of monocrystalline silicon wafer

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