CN114235195A - Ultrahigh-space-time resolution fluid temperature sensing chip and manufacturing method thereof - Google Patents
Ultrahigh-space-time resolution fluid temperature sensing chip and manufacturing method thereof Download PDFInfo
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
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- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0278—Temperature sensors
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- B—PERFORMING OPERATIONS; TRANSPORTING
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Abstract
The invention relates to an ultrahigh space-time resolution fluid temperature sensing chip and a manufacturing method thereof, wherein an electron beam exposure photoetching process is adopted for manufacturing a nanowire resistance wire of the ultrahigh space-time resolution fluid temperature sensing chip, the chip achieves nanoscale space resolution, the overall size of the nanowire resistance wire positioned in the middle achieves the nanoscale level, an excellent sensing effect is realized, the resistivity of the nanowire resistance wire is determined by the properties of a coating material, the accuracy of temperature testing is ensured, the thickness of a window is ultrathin, the observed space resolution is greatly improved, high time resolution is realized, and microsecond-level detection can be realized by micro-disturbance of temperature in a micron-nanometer region.
Description
Technical Field
The invention relates to the field of high-speed high-precision temperature change sensing chips, in particular to an ultrahigh-space-time resolution fluid temperature sensing chip and a manufacturing method thereof.
Background
In chemical engineering, based on the deep knowledge of the formation, motion and evolution law of molecules/molecular clusters to nano-microfluid discrete units, a chemical reaction or a design transfer process is constructed from bottom to top, which is the key for realizing the efficient conversion and utilization of resources and energy and accurately synthesizing new substances.
Many temperature sensing chips exist in the market today, but most of them are difficult to realize the combination of high space-time resolution and in-situ observation, especially the nanometer-scale spatial resolution, and the most important point is that most of them can only sense the whole area and do not have the function of detecting the temperature of the micro-area with high space-time resolution. It is inconvenient for people to research the movement of nano-scale liquid or gas and the temperature change generated in the reaction.
In addition, some existing sensing chips are limited by size or use environment and cannot be used in combination with many existing high-precision devices, such as transmission electron microscope, scanning electron microscope, synchrotron radiation, XPS, XRD and other devices, in which gas-liquid fluid is subjected to in-situ reaction detection. The conventional sensor is limited by the process, the size of the conventional sensor can only reach the micron level, the sensing space-time resolution of the chip can be influenced, the micro-area temperature monitoring on gas-liquid fluid cannot be carried out in a vacuum environment, and the deep research of scientific researchers is inconvenient.
Disclosure of Invention
The invention aims to provide a sensor which is suitable for being directly observed in a window of equipment (such as a transmission electron microscope, a scanning electron microscope, synchrotron radiation, XPS, XRD and the like) in various extreme environments (such as high-temperature gas, liquid and high-vacuum environments), and has a fluid temperature sensing chip with smaller size and ultrahigh space-time resolution.
The specific scheme is as follows:
a fluid temperature sensing chip with ultrahigh space-time resolution comprises an upper piece and a lower piece, wherein the upper piece and the lower piece are silicon substrates, the front surfaces of the upper piece and the lower piece are both provided with first insulating layers, the front surface of the upper piece and the front surface of the lower piece are fixed through bonding layers, the upper piece, the lower piece and the bonding layers jointly form a closed cavity, the upper piece is provided with a first window, the lower piece is provided with a liquid inlet, a liquid outlet, a sensing layer, an insulating layer and a second window, the first window and the second window are vertically aligned, the sensing layer not only comprises four contact electrodes, but also two pairs of electrodes are connected with two pairs of electrodes through a nanowire resistance wire, the nanowire resistance wire is in a spiral ring shape with a gap left therebetween and a spiral square shape with a gap left therebetween and a non-connected therebetween, the nanowire resistance wire is arranged in the second window, the two ends of the nanowire resistance wire are respectively carried on the electrodes, and the line width of the nanowire resistance wire is 20-100 nanometers, the nanowire resistance wire is covered with an insulating layer, the thickness of the insulating layer is 10-50 nanometers, the nanowire resistance wire has the effect of enabling the nanowire resistance wire to be stable in structure, and the nanowire resistance wire is also insulated from fluid microelements, so that the lower sheet can be used as a sensor to be used independently, the assembled chip can be used in various extreme environments, the lower sheet can be used for detecting the temperature in the air and the temperature of liquid in a normal-temperature environment, and due to the ultrahigh space-time resolution, the detection sensitivity is extremely high, the micro streaming motion of gas in the air and the temperature change caused by the streaming motion in the liquid can be detected.
Furthermore, the first window and the second window are silicon nitride insulating layers on the upper sheet and the lower sheet respectively, and the thickness of the silicon nitride insulating layers is 10-30 nanometers.
Furthermore, the sensing layer comprises four contact square electrodes, and the four contact square electrodes form two pairs, wherein one pair is used as a heating electrode, and the other pair is used as a monitoring electrode.
Furthermore, the nanowire resistance wire is made of platinum, molybdenum, tungsten, gold, a semiconductor or a piezoceramic material.
Furthermore, the nanowire resistance wire is manufactured by an additive process, and is subjected to film coating deposition and then is accurately positioned and photoetched in a high vacuum environment through electron beam photoetching, so that the formed nanowire resistance wire is in a spiral ring shape with gaps left among each other and uniform gaps, or in a spiral ring shape with gaps left among each other and uniform gaps and non-connected.
Furthermore, the whole size of the area occupied by the nanowire resistance wires is not more than 1 square micron, the nanowire resistance wires are located in the central area of a second window, the second window is located in the central positions of the liquid inlet and the liquid outlet, and the gaps among the nanowire resistance wires are 20-100 nanometers.
Further, the second insulating layer above the nanowire resistance wire is made of silicon dioxide or silicon nitride.
The invention also provides a method for manufacturing the ultrahigh space-time resolution fluid temperature sensing chip by electron beam lithography, which comprises the following steps:
s1, preparing upper tablets: processing a first window on a silicon substrate A with insulating layers on the front and back surfaces by photoetching, etching and other methods to manufacture an upper wafer;
s2, preparing the following tablets: four contact electrodes, a liquid inlet, a liquid outlet, a second window and a nanowire resistance wire are processed on a silicon substrate B with insulating layers on the front and back surfaces, the nanowire resistance wire is in a spiral ring shape with gaps, or a spiral square shape with gaps, and is arranged in the second window, the insulating layer is plated above the nanowire resistance wire, the insulating layer is made of silicon dioxide or silicon nitride, so that the stability of the self structure of the nanowire resistance wire is ensured, the influence of fluid infinitesimal contact on the nanowire resistance wire is eliminated, and a lower sheet is manufactured;
s3, chip assembly: the upper piece and the lower piece are fixed through the bonding layer under the chip assembling instrument, and the centers of the first window and the second window are completely aligned to enable an electron beam to penetrate through the first window and the second window, so that the ultrahigh space-time resolution fluid temperature sensing chip is obtained.
Further, step S1 includes the following steps:
s11: photoetching a first window pattern: transferring the first window pattern from the photoetching mask plate to the back surface of a silicon substrate A with insulating layers on the front and back surfaces through an ultraviolet photoetching process, developing in positive photoresist developing solution, and washing with ultrapure water to obtain a silicon substrate A1;
s12: removing the insulating layer: removing the insulating layer corresponding to the first window on the back surface of the silicon substrate A1 by RIE or IBE, soaking in an acetone solution to remove residual photoresist, and washing with ultra-pure water to obtain a silicon substrate A2;
s13: removing substrate silicon: and (3) putting the silicon chip into a KOH solution or a tetramethylammonium hydroxide solution, removing the silicon substrate A2 and the substrate silicon corresponding to the lower part of the first window by a wet etching process, soaking in an acid solution, and repeatedly washing with ultrapure water for 20-50 times to obtain a silicon substrate A3, namely the upper chip with the first window is prepared.
Further, step S2 includes the steps of:
s21: photoetching patterns of a first window, a liquid inlet and a liquid outlet: transferring the patterns of the second window, the liquid inlet and the liquid outlet from the photoetching mask plate to the back surface of a silicon substrate B with insulating layers on the front and back surfaces through an ultraviolet exposure photoetching process, developing in positive photoresist developer, washing with ultrapure water, and drying with high-purity nitrogen to obtain a silicon substrate B1;
s22: removing the insulating layer: removing the insulating layer corresponding to the liquid inlet, the liquid outlet and the second window on the back of the silicon substrate B1 by RIE or IBE, soaking in acetone solution to remove residual photoresist, and washing with ultrapure water to obtain a silicon substrate B2;
s23: removing substrate silicon: placing the silicon substrate B2 with the etched insulating layer facing upwards into a KOH solution or a tetramethylammonium hydroxide solution by a wet etching process, removing the substrate silicon corresponding to the lower parts of the silicon substrate B2, the liquid inlet, the liquid outlet and the second window, then placing the substrate silicon into an acid solution for soaking, wherein the acid solution is a mixed solution composed of hydrochloric acid, hydrogen peroxide and ultrapure water, and repeatedly washing the substrate silicon for 20-50 times by using the ultrapure water to obtain a silicon substrate B3;
s24: photoetching an electrode pattern: transferring the sensing electrode pattern and an alignment mark required by electron beam exposure lithography to the front surface of a silicon substrate B3 by using an ultraviolet lithography or laser direct writing lithography process, developing in a positive photoresist developer, and washing with ultrapure water to obtain a silicon substrate B4;
s25: preparing an electrode: after a sensing material film is sputtered on the front surface of a silicon substrate B4 by a direct current magnetron sputtering, thermal evaporation coating or electron beam evaporation coating process, the silicon substrate B5 is obtained by soaking the silicon substrate B in acetone, washing the silicon substrate B with ultrapure water and removing photoresist and a part of metal film on the photoresist;
s26: slicing: carrying out laser scribing on the silicon substrate B5 to obtain a single chip B6;
s27: photoetching a nanowire resistance wire pattern: transferring the nanowire resistance wire pattern to a window of a single chip B6 through electron beam exposure lithography, so that two ends of an electrode are conducted, two ends of the nanowire resistance wire are carried on the electrode, developing in a developing solution, and fixing to obtain a single chip B7;
s28: preparing a nanowire resistance wire: sputtering a layer of sensing material film on the front surface of the single chip B7 by using a direct current magnetron sputtering, thermal evaporation coating or electron beam evaporation coating process, soaking the sensing material film in acetone, washing the sensing material film with ultrapure water, removing photoresist and a metal thin film covering the upper part of the sensing material film to obtain a single chip B8, and obtaining the nanowire resistance wire;
s29: and (3) generating an insulating layer: and a silicon nitride insulating layer covers the front nanowire resistance wire of the single chip B8 by LPCVD, and the insulating layer not only plays a role in stabilizing the structure of the nanowire resistance wire, but also enables the nanowire resistance wire to be insulated from fluid microelements, and the lower chip is prepared.
Further, in step S24, the design of the contra-rotating mark is most important, and plays a decisive role in determining the position of the nanowire resistance wire, if the alignment mark is lost in operation, the nanowire resistance wire cannot be connected to two ends of the electrode, that is, the chip is broken, the nanowire resistance wire is manufactured around the expected position of the photo-etching nanowire resistance wire in advance through ultraviolet photo-etching or laser direct-writing photo-etching, so that the electron beam photo-etching in the later stage is aligned, the alignment mark is four cross marks symmetrically distributed around the nanowire resistance wire, and in order to enable the electron beam exposure photo-etching to reach higher position accuracy, the whole area size of the cross mark is smaller than 1 square micrometer.
Further, in step S27, the material, thickness, baking temperature and electron beam exposure dose of the photoresist affect the final photolithography precision, the photoresist used for manufacturing the nanowire resistance wire is HSQ or PMMA, the final rotation speed of the spin coating is 1000 ion-6000 r, the baking temperature is 50-500 ℃, and the exposure dose is 100 ion-1000 uC/cm2。
Compared with the prior art, the ultrahigh space-time resolution fluid temperature sensing chip provided by the invention has the following advantages: the fluid micro-element sensing chip provided by the invention adopts an electron beam exposure lithography process, utilizes a material increase method to manufacture the chip, can achieve nanoscale lithography precision compared with common ultraviolet lithography, and can enable the line width of the nanowire resistance wire in the middle to be smaller, so that the overall size of the nanowire resistance wire reaches the nanoscale, and a better sensing effect can be achieved; meanwhile, the nanowire resistance wire subjected to electron beam exposure and photoetching coating is a metal material, the resistivity of the nanowire resistance wire is determined by the property of the nanowire resistance wire, the resistivity of the nanowire resistance wire cannot be changed, and the accuracy of temperature testing is ensured; and the influence of silicon nitride etching penetration is not considered, if a silicon nitride film is broken, the high vacuum environment of an instrument can be damaged, the silicon nitride thickness can be thinned to 10 nanometers by using the electron beam exposure photoetching manufacturing process, the thickness can be quantified, the thinner the silicon nitride thickness is, the higher the observed spatial resolution is, the high time resolution is realized, and millisecond-level detection can be realized on the temperature perturbation of a micrometer and nanometer region.
The size of a nanowire resistance wire of the ultrahigh space-time resolution fluid temperature sensing chip reaches a micro-nano scale, the temperature measuring range of the used material is large, the temperature measuring range from normal temperature to hundreds of degrees centigrade is provided, the response of the sensor can be caused by the micro-disturbance of the fluid, the highest temperature measuring precision can reach the level of single digit microsecond, the time control span covers the range from static state to microsecond, and the ultrahigh space-time resolution fluid temperature sensing chip can be used in combination with an ultrafast electron microscopy technology.
The nanowire resistance wires are separated by gaps, and the helical structures which are not connected with each other can prevent internal electromagnetic interference, maximize the resistance value of the resistance wires and improve the sensitivity of the chip.
Besides, most of the operations of the ultrahigh space-time resolution fluid temperature sensing chip except electron beam lithography can be produced on a four-inch silicon chip in batch, and mass production operation can be realized.
Drawings
Fig. 1 shows a schematic cross-sectional view of a silicon substrate.
FIG. 2 shows a schematic diagram of an ultra-high spatial and temporal resolution fluid temperature sensing chip.
Fig. 3 shows a schematic view of the upper sheet.
Fig. 4 shows a schematic view of the lower sheet.
Fig. 5 shows an enlarged view of the nanowire resistance wire.
Figure 6 shows a schematic view of a cross-section of the upper sheet a-a.
Figure 7 shows a schematic view of a section B-B of the lower sheet.
Figure 8 shows a schematic view of a lower sheet C-C in cross section.
Detailed Description
To further illustrate the various embodiments, the invention provides the accompanying drawings. The accompanying drawings, which are incorporated in and constitute a part of this disclosure, illustrate embodiments of the invention and, together with the description, serve to explain the principles of the embodiments. Those skilled in the art will appreciate still other possible embodiments and advantages of the present invention with reference to these figures. Elements in the figures are not drawn to scale and like reference numerals are generally used to indicate like elements.
The invention will now be further described with reference to the accompanying drawings and detailed description.
Example 1
As shown in fig. 1 to 8, an ultrahigh spatial-temporal resolution fluid temperature sensing chip includes an upper chip 1 and a lower chip 2, where the upper chip 1 and the lower chip 2 are all a sandwich structure composed of an insulating layer, a silicon substrate, and an insulating layer.
The general structure of the silicon substrate is shown in fig. 1, and includes a substrate silicon 31 and insulating layers on both sides of the substrate silicon 31, wherein the insulating layer 32 may be a silicon nitride layer or a silicon dioxide layer. In this embodiment, the thickness of the insulating layer is 10-200 nm, and the thickness of the silicon substrate is 100-300 μm.
Referring to FIG. 2, FIG. 2 is a cross-sectional view of an ultra-high spatial-temporal resolution fluid temperature sensing chip, wherein the adhesive layer is not shown. The front surface of the upper sheet 1 and the front surface of the lower sheet 2 are fixedly bonded through a bonding layer, the bonding layer is positioned between the upper sheet and the lower sheet, and the upper sheet 1, the lower sheet 2 and the bonding layer form a closed chamber together. The adhesive layer may be a glue capable of bonding and fixing the upper sheet 1 and the lower sheet 2, or may be a bonding metal layer directly fixing the upper sheet 1 and the lower sheet 2 by metal bonding. The height of the chamber interior may be determined by the thickness of the adhesive layer, or may be determined by the heights of the bosses provided on the upper sheet 1 and the lower sheet 2 and the thickness of the adhesive layer.
Referring to fig. 2, 3 and 6, the upper sheet 1 is provided with a first window 11, and the first window 11 may be formed on the silicon substrate by photolithography and etching, specifically, the insulating layer on the reverse side of the corresponding region and the substrate silicon are etched by etching until the insulating layer on the front side of the corresponding region is exposed, and the size of the first window needs to be noticed during etching to prevent the first window from being broken due to an excessively large area.
Referring to fig. 2 and 4, the lower sheet 2 is provided with a liquid inlet 21, a liquid outlet 22, a sensing layer 23, a second window 24, a nanowire resistance wire 25, and an insulating layer 26, wherein the liquid inlet 21 and the liquid outlet 22 are communicated and closed with the cavity, and fluid can be introduced through an external environment, the liquid inlet 21 and the liquid outlet 22 can be realized by etching off the substrate silicon on the corresponding region and the insulating layers on the front and back sides of the corresponding region in a photoetching and etching manner, and because the insulating layers of the liquid inlet 21 and the liquid outlet 22 have large areas and thin thicknesses, the insulating layers and the substrate silicon on the back side of the corresponding region can be etched off in an etching manner, and only the insulating layers on the front side of the corresponding region are left for realization due to the small area of the second window 24.
Referring to fig. 5, 7 and 8, the sensing layer 23 has a nanowire resistance wire 25 located on the second window 24 in addition to the contact electrode 231, the contact electrode 231 can introduce an external voltage into the chip to apply a constant potential to the sensing chip for monitoring the temperature change in the cavity, the nanowire resistance wire 25 is in a spiral ring shape with a gap therebetween, or a spiral square shape with a gap therebetween, and is disposed on the second window, and the second window is located between the liquid inlet and the liquid outlet. The nanowire resistance wire 25 is made of gold, platinum, palladium, rhodium, molybdenum, tungsten, platinum-rhodium alloy or nonmetal molybdenum carbide, and the thickness is 30-100 nanometers; the line width of the nanowire resistance wire is 20-100 nanometers, the whole size of the area occupied by the nanowire resistance wire can reach below 1 square micrometer, an insulating layer 26 wraps the nanowire resistance wire 25, the insulating layer 26 is made of silicon dioxide or silicon nitride, the thickness of the insulating layer is 10-50 nanometers, and the insulating layer not only plays a role in stabilizing the structure of the nanowire resistance wire, but also enables the nanowire resistance wire to be insulated from fluid microelements.
The sensing layer 23 further has four contact electrodes 231 extending to the edge of the lower sheet 2 and exposed, the four contact electrodes 231 form two pairs, one pair of the four contact electrodes 231 can be used as a sensing electrode, the other pair of the four contact electrodes can be used as a monitoring electrode, one loop of the two sets of equivalent circuits can supply power and generate heat, the other loop can monitor the temperature change of the internal environment of the chip in real time, and real-time temperature sensing is performed through a feedback circuit according to the correlation between the resistance (R) and the temperature (T) in the design program.
When the upper piece and the lower piece are bonded and fixed, the chip assembly instrument can be used for packaging, the first window 11 of the upper piece 1 and the second window 24 of the lower piece 2 are arranged in an aligned mode, the observation windows are too small due to skew, the observation windows cannot be found possibly, and the electron beams cannot penetrate due to no alignment.
The whole size of the nanowire resistance wire of the ultrahigh space-time resolution fluid temperature sensing chip provided by the embodiment can reach the nanometer level, the minimum distance between the nanowire resistance wires can reach 20 nanometers, so that the appearance of the nanowire resistance wire can be directly observed in an observation window, the micro-area nanowire resistance wire has double functions of heating and sensing, can be used for monitoring the reaction temperature of liquid or gas microelements in real time and providing the temperature required by reaction, is convenient for scientific researchers to better know the chemical reaction temperature change generated at the local position in a fluid solution, the interaction among the fluid microelements and the influence of the temperature change of the micro-element part on the chemical reaction, and further reveals the mechanism and essence of the reaction. Meanwhile, the infinitesimal sensing chip also has the advantages of rapid temperature rise and fall, accurate temperature control and measurement, high spatial resolution and low sample drift rate. Due to the nano-scale micro structure, the heat transfer and stabilization time can reach microsecond nanosecond level, and the temperature sensing time resolution can be further improved by the future improvement of the loading equipment.
Example 2
The present embodiment further provides a method for manufacturing an ultra-high spatial and temporal resolution fluid temperature sensing chip by using an electron beam, and the manufacturing method can be used for manufacturing the ultra-high spatial and temporal resolution fluid temperature sensing chip described in embodiment 1.
The manufacturing method comprises the following steps:
s1, preparing upper tablets: processing a first window on a silicon substrate A with insulating layers on the front and back surfaces by photoetching, etching and other methods to manufacture an upper wafer;
s2, preparing the following tablets: four contact electrodes, a liquid inlet, a liquid outlet, a second window and a nanowire resistance wire are processed on a silicon substrate B with insulating layers on the front and back surfaces, the nanowire resistance wire is in a spiral ring shape with gaps, or a spiral square shape with gaps, and is arranged in the second window, the insulating layer is plated above the nanowire resistance wire, the insulating layer is made of silicon dioxide or silicon nitride, so that the stability of the self structure of the nanowire resistance wire is ensured, the influence of fluid infinitesimal contact on the nanowire resistance wire is eliminated, and a lower sheet is manufactured;
s3, chip assembly: the upper piece and the lower piece are fixed through an adhesive layer under a chip assembling instrument, and the centers of the first window and the second window are completely aligned to enable an electron beam to penetrate through the first window and the second window, so that the ultrahigh space-time resolution fluid temperature sensing chip is obtained;
further, step S1 includes the following steps:
s11: photoetching a first window pattern: transferring the first window pattern from the photoetching mask plate to the back surface of a silicon substrate A with insulating layers on the front and back surfaces through an ultraviolet photoetching process, developing in positive photoresist developing solution, and washing with ultrapure water to obtain a silicon substrate A1;
s12: removing the insulating layer: removing the insulating layer corresponding to the first window on the back surface of the silicon substrate A1 by RIE or IBE, soaking in an acetone solution to remove residual photoresist, and washing with ultra-pure water to obtain a silicon substrate A2;
s13: removing substrate silicon: and (3) putting the silicon chip into a KOH solution or a tetramethylammonium hydroxide solution, removing the silicon substrate A2 and the substrate silicon corresponding to the lower part of the first window by a wet etching process, soaking in an acid solution, and repeatedly washing with ultrapure water for 20-50 times to obtain a silicon substrate A3, namely the upper chip with the first window is prepared.
Further, step S2 includes the steps of:
s21: photoetching patterns of a first window, a liquid inlet and a liquid outlet: transferring the patterns of the second window, the liquid inlet and the liquid outlet from the photoetching mask plate to the back surface of a silicon substrate B with insulating layers on the front and back surfaces through an ultraviolet exposure photoetching process, developing in positive photoresist developer, washing with ultrapure water, and drying with high-purity nitrogen to obtain a silicon substrate B1;
s22: removing the insulating layer: removing the insulating layer corresponding to the liquid inlet, the liquid outlet and the second window on the back of the silicon substrate B1 by RIE or IBE, soaking in acetone solution to remove residual photoresist, and washing with ultrapure water to obtain a silicon substrate B2;
s23: removing substrate silicon: placing the silicon substrate B2 with the etched insulating layer facing upwards into a KOH solution or a tetramethylammonium hydroxide solution by a wet etching process, removing the substrate silicon corresponding to the lower parts of the silicon substrate B2, the liquid inlet, the liquid outlet and the second window, then placing the substrate silicon into an acid solution for soaking, wherein the acid solution is a mixed solution composed of hydrochloric acid, hydrogen peroxide and ultrapure water, and repeatedly washing the substrate silicon for 20-50 times by using the ultrapure water to obtain a silicon substrate B3;
s24: photoetching an electrode pattern: transferring the sensing electrode pattern and an alignment mark required by electron beam exposure lithography to the front surface of a silicon substrate B3 by using an ultraviolet lithography or laser direct writing lithography process, developing in a positive photoresist developer, and washing with ultrapure water to obtain a silicon substrate B4;
s25: preparing an electrode: after a sensing material film is sputtered on the front surface of a silicon substrate B4 by a direct current magnetron sputtering, thermal evaporation coating or electron beam evaporation coating process, the silicon substrate B5 is obtained by soaking the silicon substrate B in acetone, washing the silicon substrate B with ultrapure water and removing photoresist and a part of metal film on the photoresist;
s26: slicing: carrying out laser scribing on the silicon substrate B5 to obtain a single chip B6;
s27: photoetching a nanowire resistance wire pattern: transferring the nanowire resistance wire pattern to a window of a single chip B6 through electron beam exposure lithography, so that two ends of an electrode are conducted, two ends of the nanowire resistance wire are carried on the electrode, developing in a developing solution, and fixing to obtain a single chip B7;
s28: preparing a nanowire resistance wire: sputtering a layer of sensing material film on the front surface of the single chip B7 by using a direct current magnetron sputtering, thermal evaporation coating or electron beam evaporation coating process, soaking the sensing material film in acetone, washing the sensing material film with ultrapure water, removing photoresist and a metal thin film covering the upper part of the sensing material film to obtain a single chip B8, and obtaining the nanowire resistance wire;
s29: and (3) generating an insulating layer: and a silicon nitride insulating layer covers the front nanowire resistance wire of the single chip B8 by LPCVD, and the insulating layer not only plays a role in stabilizing the structure of the nanowire resistance wire, but also enables the nanowire resistance wire to be insulated from fluid microelements, and the lower chip is prepared.
The manufacturing method provided by the embodiment adopts a coating process after electron beam exposure lithography, and has the following advantages compared with a focused ion beam etching manufacturing process:
1. the nanowire resistance wire can be made smaller in size. The method of the embodiment adopts an electron beam exposure lithography method, utilizes a material increase method to manufacture the chip, can achieve nanometer level lithography precision compared with common ultraviolet lithography, can enable the line width of the nanowire resistance wire in the middle to be smaller, enables the overall size of the nanowire resistance wire to achieve the level of approximately nanometer, is smaller than the size of the nanowire resistance wire etched by adopting focused ion beam material reduction, and can achieve better sensing effect.
2. The resistivity is not affected. The nanowire resistance wire subjected to electron beam exposure and photoetching coating is metal, the resistivity of the nanowire resistance wire is determined by the property of the nanowire resistance wire, the nanowire resistance wire obtained by focused ion beam etching is subjected to material reduction, gallium ion beams are utilized in the focused ion beam etching, and Ga ions are injected into a metal gap, so that the resistivity of the nanowire resistance wire is changed, and further temperature testing is inaccurate.
3. The silicon nitride thickness is controllable and the resolution is improved. The focused ion beam etching is difficult to control the etching depth, so that a metal wire is required to be etched to form a pattern, the periphery of the metal wire is not adhered to each other, and silicon nitride on the lower part of the metal wire cannot penetrate through the pattern to prevent the high vacuum environment of an instrument from being damaged, so that the final silicon nitride thickness is difficult to control.
While the invention has been particularly shown and described with reference to a preferred embodiment, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (10)
1. An ultrahigh space-time resolution fluid temperature sensing chip, characterized in that: the sensor comprises an upper piece and a lower piece, wherein the upper piece and the lower piece are silicon substrates, the front surfaces of the upper piece and the lower piece are both provided with first insulating layers, the front surface of the upper piece and the front surface of the lower piece are fixed through bonding layers, the upper piece, the lower piece and the bonding layers jointly form a closed cavity, a first window is arranged on the upper piece, a liquid inlet, a liquid outlet and a sensing layer are arranged on the lower piece, a second insulating layer and a second window are arranged on the lower piece, the first window and the second window are vertically aligned, the sensing layer comprises four contact electrodes, the four contact electrodes form two pairs of electrodes, the two pairs of electrodes are connected through a nanowire resistance wire, the nanowire resistance wire is in a spiral ring shape with a gap left therebetween and a spiral square shape with a gap left therebetween and a gap left therebetween, the nanowire is arranged in the second window, the wire width of the resistance wire is 20-100 nanometers, and a second insulating layer is plated above the nanowire resistance wire, the thickness is 10-50 nm.
2. The ultra-high spatial and temporal resolution fluid temperature sensing chip of claim 1, wherein: the nanowire resistance wire is made of platinum, molybdenum, tungsten, gold, a semiconductor or a piezoelectric ceramic material.
3. The ultra-high space-time resolution fluid temperature sensing chip of claim 1, wherein: the nanowire resistance wire is manufactured by a material increase process, and is manufactured into a spiral ring shape or a spiral square shape through electron beam lithography, wherein the spiral ring shape or the spiral square shape is mutually provided with uniform gaps and is not connected.
4. The ultra-high spatial and temporal resolution fluid temperature sensing chip of claim 1, wherein: the whole size of the area occupied by the nanowire resistance wires is not more than 1 square micron, the nanowire resistance wires are located in the central area of the second window, the second window is located in the central positions of the liquid inlet and the liquid outlet, and the gaps among the nanowire resistance wires are 20-100 nanometers.
5. The ultra-high spatial and temporal resolution fluid temperature sensing chip of claim 1, wherein: the second insulating layer plated above the nanowire resistance wire is made of silicon dioxide or silicon nitride.
6. A method for manufacturing a fluid temperature sensing chip with ultrahigh space-time resolution by electron beam lithography is characterized by comprising the following steps:
s1, preparing upper tablets: processing a first window on a silicon substrate A with insulating layers on the front and back surfaces by photoetching, etching and other methods to manufacture an upper wafer;
s2, preparing the following tablets: processing four contact electrodes, a liquid inlet, a liquid outlet, a second window and a nanowire resistance wire on a silicon substrate B with insulating layers on the front and back surfaces, wherein the nanowire resistance wire is in a spiral ring shape with a gap between each two and is not connected with each other or a spiral square shape with a gap between each two and is not connected with each other and is arranged in the second window, the insulating layer is plated above the nanowire resistance wire, and the insulating layer is made of silicon dioxide or silicon nitride so as to manufacture a lower piece;
s3, chip assembly: and fixing the upper sheet and the lower sheet under a chip assembling instrument through an adhesive layer, and completely aligning the centers of the first window and the second window so that an electron beam passes through the first window and the second window to obtain the ultrahigh space-time resolution fluid temperature sensing chip.
7. The method of claim 6, wherein step S1 includes the steps of:
s11: photoetching a first window pattern: transferring the first window pattern from the photoetching mask plate to the back surface of a silicon substrate A with insulating layers on the front and back surfaces through an ultraviolet photoetching process, developing in positive photoresist developing solution, and washing with ultrapure water to obtain a silicon substrate A1;
s12: removing the insulating layer: removing the insulating layer corresponding to the first window on the back surface of the silicon substrate A1 by RIE or IBE, soaking in an acetone solution to remove residual photoresist, and washing with ultra-pure water to obtain a silicon substrate A2;
s13: removing substrate silicon: and (3) putting the silicon chip into a KOH solution or a tetramethylammonium hydroxide solution, removing the silicon substrate A2 and the substrate silicon corresponding to the lower part of the first window by a wet etching process, soaking in an acid solution, and repeatedly washing with ultrapure water for 20-50 times to obtain a silicon substrate A3, namely the upper chip with the first window is prepared.
8. The method of claim 6, wherein step S2 includes the steps of:
s21: photoetching patterns of a first window, a liquid inlet and a liquid outlet: transferring the patterns of the second window, the liquid inlet and the liquid outlet from the photoetching mask plate to the back surface of a silicon substrate B with insulating layers on the front and back surfaces through an ultraviolet exposure photoetching process, developing in positive photoresist developer, washing with ultrapure water, and drying with high-purity nitrogen to obtain a silicon substrate B1;
s22: removing the insulating layer: removing the insulating layer corresponding to the liquid inlet, the liquid outlet and the second window on the back of the silicon substrate B1 by RIE or IBE, soaking in acetone solution to remove residual photoresist, and washing with ultrapure water to obtain a silicon substrate B2;
s23: removing substrate silicon: placing the silicon substrate B2 with the etched insulating layer facing upwards into a KOH solution or a tetramethylammonium hydroxide solution by a wet etching process, removing the substrate silicon corresponding to the lower parts of the silicon substrate B2, the liquid inlet, the liquid outlet and the second window, then placing the substrate silicon into an acid solution for soaking, wherein the acid solution is a mixed solution composed of hydrochloric acid, hydrogen peroxide and ultrapure water, and repeatedly washing the substrate silicon for 20-50 times by using the ultrapure water to obtain a silicon substrate B3;
s24: photoetching an electrode pattern: transferring the sensing electrode pattern and an alignment mark required by electron beam exposure lithography to the front surface of a silicon substrate B3 by using an ultraviolet lithography or laser direct writing lithography process, developing in a positive photoresist developer, and washing with ultrapure water to obtain a silicon substrate B4;
s25: preparing an electrode: adopting the processes of direct current magnetron sputtering, thermal evaporation coating, electron beam evaporation coating and the like, sputtering a layer of resistance material film on the front surface of a silicon substrate B4, soaking the resistance material film in acetone, washing the resistance material film with ultrapure water, and removing the photoresist and the metal film on the photoresist to obtain a silicon substrate B5;
s26: slicing: carrying out laser scribing on the silicon substrate B5 to obtain a single chip B6;
s27: photoetching a nanowire resistance wire pattern: transferring the nanowire resistance wire pattern to a window of a single chip B6 through electron beam exposure lithography, so that two ends of an electrode are conducted, two ends of the nanowire resistance wire are carried on the electrode, developing in a developing solution, and fixing to obtain a single chip B7;
s28: preparing a nanowire resistance wire: sputtering a layer of heating material film on the front surface of the single chip B7 by using the processes of direct current magnetron sputtering, thermal evaporation coating, electron beam evaporation coating and the like, soaking the single chip B7 in acetone, washing the single chip B7 with ultrapure water, removing the photoresist and the metal film on the photoresist to obtain a single chip B8, wherein the line width of the nanowire resistance wire on the upper part is 20-100 nanometers,
s29: and (3) generating an insulating layer: and a silicon nitride insulating layer covers the front nanowire resistance wire of the single chip B8 by LPCVD, and the insulating layer not only plays a role in stabilizing the structure of the nanowire resistance wire, but also enables the nanowire resistance wire to be insulated from fluid microelements, and the lower chip is prepared.
9. The method of claim 8, wherein: in step S24, the alignment marks are four cross marks distributed around the resistance wire, and the size of the cross marks is less than 1 square micron.
10. Root of herbaceous plantThe method of claim 8, wherein: in step S27, the selected photoresist is HSQ or PMMA photoresist, the final rotation speed of the spin coating is 1000-2。
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Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040161708A1 (en) * | 2003-02-14 | 2004-08-19 | Communications Research Laboratory, Independent Administrative Institution | Method of manufacturing nano-gap electrode |
| CN2767978Y (en) * | 2005-01-13 | 2006-03-29 | 中国电子科技集团公司第十三研究所 | Minitype temperature sensor with nanometer scale |
| US8372752B1 (en) * | 2011-11-01 | 2013-02-12 | Peking University | Method for fabricating ultra-fine nanowire |
| CN103542956A (en) * | 2013-09-29 | 2014-01-29 | 柳州市宏亿科技有限公司 | Zigbee temperature sensor manufacturing method |
| CN205580613U (en) * | 2016-04-29 | 2016-09-14 | 广西科技大学鹿山学院 | Z -wave's temperature sensor |
| CN109231151A (en) * | 2018-09-26 | 2019-01-18 | 天津大学 | A kind of device and application for making self-assembly structure |
| CN109809356A (en) * | 2019-03-13 | 2019-05-28 | 翼捷安全设备（昆山）有限公司 | MEMS micro-heater with integrated temperature sensor |
| CN110143564A (en) * | 2019-04-02 | 2019-08-20 | 上海交通大学 | The connection structure and preparation method of temperature sensor, electrode and temperature-sensitive membrane |
| CN111879797A (en) * | 2020-08-26 | 2020-11-03 | 厦门大学 | High-resolution in-situ fluid turbulence heating chip for transmission electron microscope |
| CN212932449U (en) * | 2020-08-26 | 2021-04-09 | 厦门大学 | High-resolution in-situ fluid turbulence heating chip for transmission electron microscope |
-
2021
- 2021-11-18 CN CN202111370974.5A patent/CN114235195A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040161708A1 (en) * | 2003-02-14 | 2004-08-19 | Communications Research Laboratory, Independent Administrative Institution | Method of manufacturing nano-gap electrode |
| CN2767978Y (en) * | 2005-01-13 | 2006-03-29 | 中国电子科技集团公司第十三研究所 | Minitype temperature sensor with nanometer scale |
| US8372752B1 (en) * | 2011-11-01 | 2013-02-12 | Peking University | Method for fabricating ultra-fine nanowire |
| CN103542956A (en) * | 2013-09-29 | 2014-01-29 | 柳州市宏亿科技有限公司 | Zigbee temperature sensor manufacturing method |
| CN205580613U (en) * | 2016-04-29 | 2016-09-14 | 广西科技大学鹿山学院 | Z -wave's temperature sensor |
| CN109231151A (en) * | 2018-09-26 | 2019-01-18 | 天津大学 | A kind of device and application for making self-assembly structure |
| CN109809356A (en) * | 2019-03-13 | 2019-05-28 | 翼捷安全设备（昆山）有限公司 | MEMS micro-heater with integrated temperature sensor |
| CN110143564A (en) * | 2019-04-02 | 2019-08-20 | 上海交通大学 | The connection structure and preparation method of temperature sensor, electrode and temperature-sensitive membrane |
| CN111879797A (en) * | 2020-08-26 | 2020-11-03 | 厦门大学 | High-resolution in-situ fluid turbulence heating chip for transmission electron microscope |
| CN212932449U (en) * | 2020-08-26 | 2021-04-09 | 厦门大学 | High-resolution in-situ fluid turbulence heating chip for transmission electron microscope |
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