CN114203834A - Solar cell with double-sided electrode structure and preparation method thereof - Google Patents
Solar cell with double-sided electrode structure and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title abstract description 17
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 140
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 70
- 238000000034 method Methods 0.000 claims abstract description 52
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 38
- 229910052802 copper Inorganic materials 0.000 claims abstract description 38
- 239000010949 copper Substances 0.000 claims abstract description 38
- 238000000151 deposition Methods 0.000 claims abstract description 32
- 239000010410 layer Substances 0.000 claims description 159
- 239000000758 substrate Substances 0.000 claims description 50
- 239000011241 protective layer Substances 0.000 claims description 24
- 239000003638 chemical reducing agent Substances 0.000 claims description 16
- 238000006722 reduction reaction Methods 0.000 claims description 16
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 15
- 229910052709 silver Inorganic materials 0.000 claims description 15
- 239000004332 silver Substances 0.000 claims description 15
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 14
- 238000005234 chemical deposition Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 238000004070 electrodeposition Methods 0.000 claims description 7
- 229910052763 palladium Inorganic materials 0.000 claims description 7
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 5
- 229910017052 cobalt Inorganic materials 0.000 claims description 5
- 239000010941 cobalt Substances 0.000 claims description 5
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- 230000006698 induction Effects 0.000 claims description 5
- 229910052707 ruthenium Inorganic materials 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 claims description 3
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 claims description 3
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 claims description 3
- 238000011065 in-situ storage Methods 0.000 claims description 2
- 230000003197 catalytic effect Effects 0.000 abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 230000003247 decreasing effect Effects 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 5
- 238000010329 laser etching Methods 0.000 description 5
- 238000001465 metallisation Methods 0.000 description 5
- 238000010531 catalytic reduction reaction Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002003 electrode paste Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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Abstract
The invention provides a solar cell with a double-sided electrode structure and a preparation method thereof. According to the invention, the seed layer is arranged for depositing the nickel layer, the nickel can be catalytically reduced at the seed part by utilizing the catalytic activity of the seed layer, the nickel layer is formed, the electrode has higher binding force, and the copper layers are deposited on two sides of the electrode simultaneously, so that the process flow is effectively shortened, and the preparation efficiency is improved.
Description
Technical Field
The invention belongs to the technical field of solar cells, and relates to a solar cell with a double-sided electrode structure and a preparation method thereof.
Background
The solar cell is a device for directly converting light energy into electric energy by utilizing a photovoltaic effect, and is an important component in the practical application process of solar energy. At present, a crystalline silicon solar cell is mainly used in commercialization, and a TOPCon cell is favored by more photovoltaic enterprises due to the characteristics of remarkable passivation effect, high cell efficiency, high temperature resistance, high compatibility with a previous generation cell production line and the like.
In order to fully collect photoelectrons, a current generated by a photovoltaic effect is led out by preparing a grid line electrode on the surface of the solar cell, so that the grid line becomes an important influence factor of the cell performance. The requirements of the solar cell on the grid line are as follows: less shading loss; a smaller gate line resistance; lower contact resistance; lower cost. At present, the industrial metal grid line scheme generally adopts a method of screen printing silver paste, and the process has the characteristics of mature process, simple steps, diversified patterns, high productivity and the like. However, with the development of batteries, the amount of silver paste required by the double-sided battery is doubled, and the requirement on the height-width ratio of the grid lines is higher and higher; the cost of screen printing silver paste is therefore increasing.
CN105742378A discloses a metallization method for N-type solar cell, which is to form a groove-like structure penetrating through a passivation antireflection film on the front surface of an N-type crystal silicon substrate after the N-type crystal silicon substrate is processed, and print a back electrode on the back surface of the N-type crystal silicon substrate by silver paste; and then printing aluminum paste on the groove-shaped structure to form a front side auxiliary grid, then printing aluminum paste or silver paste to form a front side main grid, and sintering to obtain the N-type solar cell. The beneficial effects are as follows: in the metallization of the front surface of the N-type solar cell, silver-containing slurry is used for the main grid line, so that the welding requirement can be well met; the aluminum paste is used for the secondary grid line, so that excellent ohmic contact can be formed with the p + doped surface, and the production cost brought by the paste can be greatly reduced.
CN104465805A discloses a grid line structure with local contact on the front surface of a solar cell and a method for manufacturing the same, wherein the grid line structure with local contact on the front surface of the solar cell has a plurality of grid line electrodes, each grid line electrode has a plurality of sections of local contact metal electrodes and a plurality of sections of non-contact metal electrodes, the local contact metal electrodes are electrically connected with the non-contact metal electrodes, the non-contact metal electrodes are made of non-burn-through metal electrode paste, and the local contact metal electrodes form ohmic contact with a silicon substrate after penetrating through a dielectric film of the cell. The invention can effectively reduce the metallization area and reduce the composite current of the metallization area under the condition of ensuring to avoid transporting electrons, thereby effectively improving the open-circuit voltage of the battery and improving the conversion efficiency of the solar battery.
The existing method for screen printing silver paste has the problems of high cost, poor electrode binding force, complex preparation process and the like, so how to provide an electrode metallization method with simple preparation process and strong electrode binding force becomes a problem which needs to be solved urgently at present.
Disclosure of Invention
Aiming at the defects in the prior art, the invention aims to provide a solar cell with a double-sided electrode structure and a preparation method thereof.
In order to achieve the purpose, the invention adopts the following technical scheme:
according to the first aspect, the solar cell with the double-sided electrode structure comprises a substrate, the surfaces of two sides of the substrate are respectively an N surface and a P surface, the N surface and the P surface are respectively provided with an electrode grid line groove, and a seed layer, a nickel layer and a copper layer are sequentially stacked in the electrode grid line groove respectively.
According to the invention, by utilizing the photovoltaic characteristic and the semiconductor characteristic of the substrate, the seed layer and the nickel layer are respectively deposited on the surfaces of two sides, the seed layer can be used as a catalytic center to form the nickel layer through catalytic reduction, and the bonding force of the electrode is effectively improved; in addition, the nickel layer increases the conductivity of the grid line, can effectively prevent copper from migrating to silicon, and reduces the consumption and cost of noble metal.
In one embodiment, the opening mode of the electrode grid line groove comprises laser etching, the width of the grid line is controlled through laser, the shielding area of the grid line is adjusted, and the effective area of the battery is increased.
In a preferred embodiment of the present invention, the thickness of the seed layer in the N-plane is 0.1 to 20nm, for example, 0.1nm, 0.2nm, 0.4nm, 0.6nm, 0.8nm, 1.0nm, 2.0nm, 4.0nm, 6.0nm, 8.0nm, 10.0nm, 12.0nm, 14.0nm, 16.0nm, 18.0nm, or 20.0 nm.
The thickness of the seed layer in the N surface is controlled to be 0.1-20 nm, so that the nickel-based composite material has better catalytic activity, the binding force between the nickel layer and the silicon substrate can be improved, and if the thickness is lower than 0.1nm, the catalytic activity is lower, so that the desired nickel layer cannot be obtained by a chemical reduction method; if the thickness is more than 20nm, there are problems that the catalytic activity is decreased and the binding force is decreased.
The thickness of the seed layer in the P surface is 1-20 nm, such as 1nm, 2nm, 4nm, 6nm, 8nm, 10nm, 12nm, 14nm, 16nm, 18nm or 20 nm.
According to the invention, the thickness of the seed layer in the P surface is controlled to be 1-20 nm, so that the catalytic activity is better, the binding force between the nickel layer and the silicon substrate can be improved, and if the thickness is lower than 1nm, the problems of poor surface uniformity and low catalytic activity of the grid line exist; if the thickness is more than 20nm, there are problems that the catalytic activity is decreased and the binding force is decreased.
In a preferred embodiment of the present invention, the thickness of the nickel layer in the N face is 0.5 to 1 μm, for example, 0.50 μm, 0.55 μm, 0.60 μm, 0.65 μm, 0.70 μm, 0.75 μm, 0.80 μm, 0.85 μm, 0.90 μm, 0.95 μm or 1.00. mu.m.
The thickness of the nickel layer in the P face is 0.5 to 1 μm, for example, 0.50 μm, 0.55 μm, 0.60 μm, 0.65 μm, 0.70 μm, 0.75 μm, 0.80 μm, 0.85 μm, 0.90 μm, 0.95 μm or 1.00 μm.
The copper layer has a thickness of 5 to 15 μm, for example, 5 μm, 6 μm, 7 μm, 8 μm, 9 μm, 10 μm, 11 μm, 12 μm, 13 μm, 14 μm, or 15 μm.
The material of the seed layer in the N surface comprises one or the combination of at least two of palladium, silver, cobalt, gold and ruthenium.
The material of the seed layer in the P surface comprises one or the combination of at least two of palladium, silver, cobalt, gold and ruthenium.
In a preferred embodiment of the present invention, the surface of the copper layer is further provided with a protective layer, and the thickness of the protective layer is 1 to 2 μm, for example, 1.0 μm, 1.1 μm, 1.2 μm, 1.3 μm, 1.4 μm, 1.5 μm, 1.6 μm, 1.7 μm, 1.8 μm, 1.9 μm, or 2.0 μm.
The protective layer is made of silver and/or tin.
As a preferable aspect of the present invention, the solar cell includes a TOPCon cell or a PERC cell.
In a second aspect, the present invention provides a method for preparing the solar cell with the double-sided electrode structure of the first aspect, the method comprising:
and (2) arranging electrode grid line grooves on the surfaces of two sides of the substrate, respectively depositing a seed layer and a nickel layer in the electrode grid line grooves of the N surface and the P surface, depositing the nickel layer on the surface of the seed layer in situ, adjusting the currents on the two sides of the substrate to be the same, and simultaneously depositing a copper layer on the nickel layers on the two sides of the substrate to prepare the solar cell with the double-sided electrode structure.
According to the invention, by utilizing the photovoltaic characteristic and the semiconductor characteristic of the substrate, the seed layer and the nickel layer are respectively deposited on the surfaces of two sides, the seed layer can be used as a catalytic center, and the nickel layer is formed by catalytic reduction, so that the binding force of an electrode is effectively improved compared with the traditional method of directly depositing the nickel layer; furthermore, the invention achieves the process of simultaneously depositing the copper layers on the nickel layers on the two sides of the substrate by adjusting the currents on the two sides of the substrate to be the same, effectively shortens the process route and improves the preparation efficiency.
As a preferable embodiment of the present invention, the deposition manner of the seed layer in the N-plane includes a photo-induced chemical reduction method.
The deposition mode of the seed layer in the P surface comprises an electric induction chemical reduction method.
In the invention, the N-side seed layer and the P-side seed layer are respectively subjected to a light-induced chemical reduction method and an electric-induced chemical reduction method, so that the deposition effect of the seed layer is ensured, the catalytic effect and the bonding capability of the seed layer are improved, and the deposition effect of the nickel layer is ensured.
The nickel layer is deposited by chemical deposition.
As a preferred aspect of the present invention, the method of depositing a copper layer includes: and (3) adjusting the currents on two sides of the substrate to be equal to each other by using the nickel layer as a conductive electrode, wherein the currents are 0.5-1.0A, such as 0.50A, 0.55A, 0.60A, 0.65A, 0.70A, 0.75A, 0.80A, 0.85A, 0.90A, 0.95A or 1.00A, and performing electrochemical deposition on copper after adjustment.
In one embodiment, the manner of adjusting the currents on both sides of the substrate to be equal is: the nickel layers on the two sides of the substrate are respectively connected with power supplies with different voltages, so that the current on the two sides of the substrate is adjusted and guaranteed to be equal.
In a preferred embodiment of the present invention, a protective layer is further deposited on the surface of the copper layer, and the deposition method of the protective layer includes chemical deposition or electrochemical deposition.
As a preferred aspect of the present invention, the deposition method of the protective layer is electrochemical deposition, and the electrochemical deposition includes: and (3) adjusting the currents on the two sides of the substrate to be equal by taking the copper layer as a conductive electrode, wherein the currents are 2.0-3.0A, such as 2.0A, 2.1A, 2.2A, 2.3A, 2.4A, 2.5A, 2.6A, 2.7A, 2.8A, 2.9A or 3.0A, and simultaneously depositing protective layers on the two sides of the battery.
Specifically, the specific preparation steps of the preparation method of the solar cell with the double-sided electrode structure provided by the invention are as follows:
laser etching is adopted to form electrode grid line grooves on the surfaces of two sides of the substrate, in the N surface, a seed layer with the thickness of 0.1-20 nm is deposited in the electrode grid line grooves by adopting a light-induced chemical reduction method, and then nickel is catalytically reduced on the surface of the seed layer by adopting a chemical deposition method to form a nickel layer with the thickness of 0.5-1 mu m;
in the P surface, a seed layer with the thickness of 1-20 nm is deposited in the electrode grid line grooves by adopting an electrically induced chemical reduction method, and nickel is catalytically reduced on the surface of the seed layer by adopting a chemical deposition method to form a nickel layer with the thickness of 0.5-1 mu m;
taking a nickel layer as a conductive electrode, respectively connecting different power supplies, adjusting the currents on two sides of the substrate to be the same and all to be 0.5-1.0A, simultaneously depositing copper layers on the nickel layers on the N surface and the P surface, wherein the copper layers on the two sides are the same in thickness and all to be 5-15 mu m;
and (2) respectively connecting the copper layers serving as conductive electrodes with different power supplies, adjusting the currents on two sides of the substrate to be the same and to be 2.0-3.0A, simultaneously depositing protective layers on the copper layers on the N surface and the P surface, wherein the thicknesses of the protective layers on the two sides are the same and are 1-2 mu m, and preparing the solar cell with the double-sided electrode structure.
The recitation of numerical ranges herein includes not only the above-recited numerical values, but also any numerical values between non-recited numerical ranges, and is not intended to be exhaustive or to limit the invention to the precise numerical values encompassed within the range for brevity and clarity.
Compared with the prior art, the invention has the beneficial effects that:
according to the invention, by utilizing the photovoltaic characteristic and the semiconductor characteristic of the substrate, the seed layer and the nickel layer are respectively deposited on the surfaces of two sides, the seed layer can be used as a catalytic center, and the nickel layer is formed by catalytic reduction, so that the binding force of an electrode is effectively improved compared with the traditional method of directly depositing the nickel layer; furthermore, the invention achieves the process of simultaneously depositing the copper layers on the nickel layers on the two sides of the substrate by adjusting the currents on the two sides of the substrate to be the same, effectively shortens the process route and improves the preparation efficiency.
Drawings
Fig. 1 is a process flow diagram of a method for manufacturing a double-sided electrode structure provided in embodiment 1 of the present invention.
Wherein, the 1-TOPCon substrate; 2-tunneling oxide layer; a 3-phosphorus heavily doped polysilicon layer; a 4-boron heavily doped polysilicon layer; 5-an aluminum oxide layer; a 6-silicon nitride layer; 7-a first seed layer; 8-a first nickel layer; 9-a second seed layer; 10-a second nickel layer; 11-a copper layer; 12-protective layer.
Detailed Description
It is to be understood that in the description of the present invention, the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate orientations or positional relationships based on those shown in the drawings, and are used only for convenience in describing the present invention and for simplicity in description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be taken as limiting the present invention. Furthermore, the terms "first", "second", etc. are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first," "second," etc. may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless otherwise specified.
It should be noted that, in the description of the present invention, unless otherwise explicitly specified or limited, the terms "disposed," "connected" and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art through specific situations.
The technical solution of the present invention is further explained by the following embodiments.
Example 1
The embodiment provides a preparation method of a solar cell with a double-sided electrode structure, as shown in fig. 1, the preparation method specifically includes the following steps:
electrode grid line grooves are formed in the surfaces of two sides of the TOPCon substrate through laser etching, the TOPCon substrate comprises a TOPCon substrate 1, the N surface of the TOPCon substrate 1 comprises a tunneling oxide layer 2, a phosphorus heavily doped polycrystalline silicon layer 3 and a silicon nitride layer 6 which are sequentially stacked, and the P surface of the TOPCon substrate 1 comprises a boron heavily doped polycrystalline silicon layer 4, an alumina layer 5 and a silicon nitride layer 6 which are sequentially stacked;
in the N surface, a first seed layer 7 with the thickness of 10nm is deposited in the electrode grid line grooves by adopting a light-induced chemical reduction method, the material is palladium, and nickel is catalytically reduced on the surface of the seed layer by adopting a chemical deposition method to form a first nickel layer 8 with the thickness of 0.75 mu m;
in the P surface, a second seed layer 9 with the thickness of 10nm is deposited in the electrode grid line grooves by adopting an electric induction chemical reduction method, the material is palladium, and nickel is catalytically reduced on the surface of the seed layer by adopting a chemical deposition method to form a second nickel layer 10 with the thickness of 0.75 mu m;
taking a nickel layer as a conductive electrode, respectively connecting different power supplies, adjusting the currents on two sides of the substrate to be the same and 0.7A, simultaneously depositing copper layers 11 on the nickel layers on the N surface and the P surface, wherein the copper layers 11 on the two sides have the same thickness and are 10 micrometers;
the solar cell with the double-sided electrode structure is prepared by taking a copper layer 11 as a conductive electrode, respectively connecting different power supplies, adjusting the currents on two sides of a substrate to be the same and to be 2.5A, simultaneously depositing a protective layer 12 made of silver on the copper layer 11 on the N surface and the P surface, wherein the thicknesses of the protective layers 12 on the two sides are the same and are 1.5 mu m respectively.
Example 2
The embodiment provides a preparation method of a solar cell with a double-sided electrode structure, which specifically comprises the following steps:
forming electrode grid line grooves on the surfaces of two sides of the PERC substrate by adopting laser etching;
in the N surface, a seed layer with the thickness of 0.1nm is deposited in the electrode grid line groove by adopting a light-induced chemical reduction method, the material is ruthenium, and nickel is catalytically reduced on the surface of the seed layer by adopting a chemical deposition method to form a nickel layer with the thickness of 0.5 mu m;
in the P surface, a seed layer with the thickness of 1nm is deposited in the electrode grid line grooves by adopting an electric induction chemical reduction method, the material is silver, and nickel is catalytically reduced on the surface of the seed layer by adopting a chemical deposition method to form a nickel layer with the thickness of 0.5 mu m;
taking a nickel layer as a conductive electrode, respectively connecting different power supplies, adjusting the currents on two sides of the substrate to be the same and 0.6A, simultaneously depositing copper layers 11 on the nickel layers on the N surface and the P surface, wherein the copper layers 11 on the two sides have the same thickness and are 5 micrometers;
the solar cell with the double-sided electrode structure is prepared by taking the copper layer 11 as a conductive electrode, respectively connecting different power supplies, adjusting the currents on two sides of the substrate to be the same and to be 2.2A, simultaneously depositing the protective layers 12 on the copper layers 11 on the N surface and the P surface, wherein the protective layers are made of tin, the thicknesses of the protective layers 12 on the two sides are the same and are 1 micrometer.
Example 3
The embodiment provides a preparation method of a solar cell with a double-sided electrode structure, which specifically comprises the following steps:
forming electrode grid wire grooves on the surfaces of two sides of the TOPCon substrate by adopting laser etching;
in the N surface, a seed layer with the thickness of 20nm is deposited in the electrode grid line grooves by adopting a light-induced chemical reduction method, the material is palladium, and nickel is catalytically reduced on the surface of the seed layer by adopting a chemical deposition method to form a nickel layer with the thickness of 1 mu m;
in the P surface, a seed layer with the thickness of 20nm is deposited in the electrode grid line grooves by adopting an electric induction chemical reduction method, the material is cobalt, and nickel is catalytically reduced on the surface of the seed layer by adopting a chemical deposition method to form a nickel layer with the thickness of 1 mu m;
taking a nickel layer as a conductive electrode, respectively connecting different power supplies, adjusting the currents on two sides of the substrate to be the same and 0.9A, simultaneously depositing copper layers 11 on the nickel layers on the N surface and the P surface, wherein the copper layers 11 on the two sides have the same thickness and are 15 micrometers;
the solar cell with the double-sided electrode structure is prepared by taking a copper layer 11 as a conductive electrode, respectively connecting different power supplies, adjusting the currents on two sides of a substrate to be the same and to be 3.0A, simultaneously depositing a protective layer 12 made of tin on the copper layer 11 on the N surface and the P surface, wherein the thicknesses of the protective layers 12 on the two sides are the same and are 2 micrometers.
Example 4
This example provides a method for manufacturing a solar cell having a double-sided electrode structure, which is different from example 1 in that the thickness of the seed layer in the N-side is 0.05nm, and the rest of the parameters and steps are exactly the same as those in example 1.
Example 5
This example provides a method for manufacturing a solar cell having a double-sided electrode structure, which is different from example 1 in that the thickness of the seed layer in the N-side is 25nm, and the rest of the parameters and steps are exactly the same as those in example 1.
Example 6
This example provides a method for manufacturing a solar cell with a double-sided electrode structure, which is different from example 1 in that the thickness of the seed layer in the P-side is 0.5nm, and the rest of the parameters and steps are exactly the same as those in example 1.
Example 7
This example provides a method for manufacturing a solar cell having a double-sided electrode structure, which is different from example 1 in that the thickness of the seed layer in the P-side is 25nm, and the rest of the parameters and steps are exactly the same as those in example 1.
Comparative example 1
This comparative example provides a method for fabricating a solar cell having a double-sided electrode structure, which is different from example 1 in that a seed layer is not deposited and the remaining parameters and steps are identical to those of example 1.
And carrying out a grid line binding force test on the prepared double-sided electrode structure, wherein the test method comprises the following steps:
(1) heating the base material to 50 ℃ on a preheating table for welding, wherein the welding temperature is 280-320 ℃;
(2) testing the welded grid line by adopting a tension meter, wherein the testing range is 0-50N
The test results are shown in table 1.
TABLE 1
| N face binding force/N | P-side binding force/N | |
| Example 1 | 5.4 | 5.3 |
| Example 2 | 5.0 | 5.1 |
| Example 3 | 5.3 | 5.1 |
| Example 4 | 3.5 | 5.3 |
| Example 5 | 4.8 | 5.3 |
| Example 6 | 5.4 | 3.3 |
| Example 7 | 5.4 | 4.8 |
| Comparative example 1 | 3.1 | 3.0 |
As can be seen from the above table:
(1) compared with the embodiments 4 and 5, the embodiment 1 has the advantages that the thickness of the seed layer in the N surface is controlled to be 0.1-20 nm, so that the nickel-based composite material has better catalytic activity, the bonding force between the nickel layer and the silicon substrate can be improved, if the thickness is less than 0.1nm, the catalytic activity is lower, and the desired nickel layer cannot be obtained by a chemical reduction method; if the thickness is more than 20nm, there are problems that the catalytic activity is decreased and the binding force is decreased.
(2) Compared with the embodiments 6 and 7, the embodiment 1 has the advantages that the thickness of the seed layer in the P surface is controlled to be 1-20 nm, so that the catalytic activity is better, the binding force between the nickel layer and the silicon substrate can be improved, and if the thickness is less than 1nm, the problems of poor surface uniformity of the grid line and low catalytic activity exist; if the thickness is more than 20nm, there are problems that the catalytic activity is decreased and the binding force is decreased.
(3) Compared with the comparative example 1, the embodiment 1 shows that the seed layer and the nickel layer are respectively deposited on the surfaces of two sides by utilizing the photovoltaic characteristic and the semiconductor characteristic of the substrate, the seed layer can be used as a catalytic center to form the nickel layer through catalytic reduction, and compared with the traditional method for directly depositing the nickel layer, the electrode bonding force is effectively improved and reaches more than 5N.
Furthermore, the invention achieves the process of simultaneously depositing the copper layers 11 on the nickel layers on the two sides of the substrate by adjusting the currents on the two sides of the substrate to be the same, effectively shortens the process route and improves the preparation efficiency.
The applicant declares that the above description is only a specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and it should be understood by those skilled in the art that any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are within the scope and disclosure of the present invention.
Claims (10)
1. The utility model provides a solar cell with two-sided electrode structure, its characterized in that, solar cell includes the base, the both sides surface of base is N face and P face respectively, N face and P face all are provided with the electrode grid line groove, it has seed layer, nickel layer and copper layer to stack gradually respectively in the electrode grid line groove.
2. The solar cell according to claim 1, wherein the thickness of the seed layer in the N-plane is 0.1-20 nm;
the thickness of the seed layer in the P surface is 1-20 nm.
3. The solar cell according to claim 1, wherein the thickness of the nickel layer in the N-side is 0.5 to 1 μm, the thickness of the nickel layer in the P-side is 0.5 to 1 μm, and the thickness of the copper layer is 5 to 15 μm;
the material of the seed layer in the N surface comprises one or the combination of at least two of palladium, silver, cobalt, gold and ruthenium;
the material of the seed layer in the P surface comprises one or the combination of at least two of palladium, silver, cobalt, gold and ruthenium.
4. The solar cell according to claim 1, wherein a protective layer is further disposed on the surface of the copper layer, and the thickness of the protective layer is 1-2 μm;
the protective layer is made of silver and/or tin.
5. The solar cell of claim 1, wherein the solar cell comprises a TOPCon cell or a PERC cell.
6. A method for preparing a solar cell with a bifacial electrode structure according to any one of claims 1-5, wherein the method comprises:
and (2) arranging electrode grid line grooves on the surfaces of two sides of the substrate, respectively depositing a seed layer and a nickel layer in the electrode grid line grooves of the N surface and the P surface, depositing the nickel layer on the surface of the seed layer in situ, adjusting the currents on the two sides of the substrate to be the same, and simultaneously depositing a copper layer on the nickel layers on the two sides of the substrate to prepare the solar cell with the double-sided electrode structure.
7. The method according to claim 6, wherein the seed layer in the N-plane is deposited by a photo-induced chemical reduction method;
the deposition mode of the seed layer in the P surface comprises an electric induction chemical reduction method;
the nickel layer is deposited by chemical deposition.
8. The method of manufacturing according to claim 6, wherein the method of depositing a copper layer comprises: and (3) taking the nickel layer as a conductive electrode, adjusting the currents on the two sides of the substrate to be equal, wherein the current is 0.5-1.0A, and performing electrochemical deposition on copper after adjustment.
9. The method according to claim 6, wherein a protective layer is further deposited on the surface of the copper layer, and the protective layer is deposited by a chemical deposition method or an electrochemical deposition method.
10. The method of claim 9, wherein the protective layer is deposited by an electrochemical deposition process comprising: and (3) taking the copper layer as a conductive electrode, adjusting the currents on the two sides of the substrate to be equal, wherein the currents are 2.0-3.0A, and simultaneously depositing protective layers on the two sides of the battery.
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| CN115117186A (en) * | 2022-08-31 | 2022-09-27 | 苏州晶洲装备科技有限公司 | TOPCon battery and preparation method thereof |
| CN115132862A (en) * | 2022-08-31 | 2022-09-30 | 苏州晶洲装备科技有限公司 | TOPCon battery with double-sided grid lines and preparation method thereof |
| CN116960199A (en) * | 2023-09-20 | 2023-10-27 | 上海昕沐化学科技有限公司 | Manufacturing method of metal grid line electrode on heterojunction solar cell |
| WO2023213024A1 (en) * | 2022-05-06 | 2023-11-09 | 中国科学院宁波材料技术与工程研究所 | Electrode structure of topcon battery, preparation method therefor and application thereof |
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| WO2023213024A1 (en) * | 2022-05-06 | 2023-11-09 | 中国科学院宁波材料技术与工程研究所 | Electrode structure of topcon battery, preparation method therefor and application thereof |
| CN115117186A (en) * | 2022-08-31 | 2022-09-27 | 苏州晶洲装备科技有限公司 | TOPCon battery and preparation method thereof |
| CN115132862A (en) * | 2022-08-31 | 2022-09-30 | 苏州晶洲装备科技有限公司 | TOPCon battery with double-sided grid lines and preparation method thereof |
| CN115132862B (en) * | 2022-08-31 | 2022-11-18 | 苏州晶洲装备科技有限公司 | TOPCon battery with double-sided grid lines and preparation method thereof |
| CN115117186B (en) * | 2022-08-31 | 2022-12-06 | 苏州晶洲装备科技有限公司 | TOPCon battery and preparation method thereof |
| CN116960199A (en) * | 2023-09-20 | 2023-10-27 | 上海昕沐化学科技有限公司 | Manufacturing method of metal grid line electrode on heterojunction solar cell |
| CN116960199B (en) * | 2023-09-20 | 2023-12-01 | 上海昕沐化学科技有限公司 | Manufacturing method of metal grid line electrode on heterojunction solar cell |
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