CN114197021B - Double-wafer film coating clamp - Google Patents
Double-wafer film coating clamp Download PDFInfo
- Publication number
- CN114197021B CN114197021B CN202111298590.7A CN202111298590A CN114197021B CN 114197021 B CN114197021 B CN 114197021B CN 202111298590 A CN202111298590 A CN 202111298590A CN 114197021 B CN114197021 B CN 114197021B
- Authority
- CN
- China
- Prior art keywords
- conductive
- screw
- wafer
- ring
- plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000007888 film coating Substances 0.000 title description 6
- 238000009501 film coating Methods 0.000 title description 6
- 238000000576 coating method Methods 0.000 claims abstract description 28
- 239000011248 coating agent Substances 0.000 claims abstract description 25
- 238000007747 plating Methods 0.000 claims abstract description 19
- 229920002379 silicone rubber Polymers 0.000 claims description 46
- 210000002105 tongue Anatomy 0.000 claims description 26
- 238000007789 sealing Methods 0.000 claims description 16
- 230000035515 penetration Effects 0.000 claims description 15
- 239000004945 silicone rubber Substances 0.000 claims description 13
- 230000000149 penetrating effect Effects 0.000 claims description 5
- 229920001971 elastomer Polymers 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims description 2
- 125000003003 spiro group Chemical group 0.000 claims description 2
- 230000037431 insertion Effects 0.000 claims 1
- 238000003780 insertion Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 abstract description 59
- 238000000034 method Methods 0.000 abstract description 11
- 230000009467 reduction Effects 0.000 abstract description 2
- 230000008569 process Effects 0.000 description 7
- 238000004070 electrodeposition Methods 0.000 description 4
- 238000009713 electroplating Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/06—Suspending or supporting devices for articles to be coated
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/007—Current directing devices
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
The invention discloses a double-wafer coating clamp, which solves the technical problem that the existing wafer coating clamp is easy to cause reduction of wafer coating yield. The method comprises the steps that a fixture double-wafer design idea is adopted, a wafer embedding groove and a conductive disc are respectively arranged on the outer side faces of two fixture plates, a wafer plated with a pre-plating film is arranged in the conductive disc, a large-size telescopic conductive needle is arranged between the conductive disc and the conductive plate, and the large-size telescopic conductive needle is propped against the conductive disc, so that the conductive plate, the large-size telescopic conductive needle and the conductive disc form a power supply electrode of the wafer plated film; radial bulges are arranged on the inner circle of the cover plate ring of the clamp at equal intervals along the radial direction, the wafer is limited by the radial bulges, small-size telescopic conductive pins are arranged in the radial bulges and are propped against the film plating surface of the wafer to form another power supply electrode for wafer film plating; the invention has compact integral structure and small clamp volume, and realizes coating of two wafers.
Description
Technical Field
The invention relates to a wafer coating clamp, in particular to a double-wafer coating clamp capable of simultaneously coating two wafers and greatly improving the wafer coating yield.
Background
The wafer coating process is the most widely applied process in the semiconductor wet manufacturing process, plays a role in supporting and connecting various packaging devices, and the main flow processes of the existing wafer coating can be divided into two types of physical coating and electrochemical deposition coating (ECD); the electrochemical deposition coating is to deposit a specified film material on a wafer substrate material by utilizing cations and anions to generate different oxidation-reduction reactions under the action of an electric field; the electrochemical deposition coating process has the advantages of low process temperature, good coating binding force, no limitation of the shape of a coated workpiece on a coating solution, easy control of solution components in film formation, simple structure of electroplating equipment and low cost, and is widely adopted by manufacturers; in the electrochemical deposition coating process of the wafer, the wafer is clamped by a clamp and then put into a plating solution for coating, the coating is performed on the coating surface of the wafer, and the other surface of the wafer is tightly sealed and cannot be electroplated; the structure of the conductive points on the existing wafer coating clamp is simpler, and the conductive structure is designed by adopting an elastic conductive needle or a metal ring; the elastic needle has poor tightness in the electroplating process, so that the replacement frequency of the conductive needle is caused, and if a long-time electroplating process is performed, the conductive needle is easy to adhere to a conductive point of a wafer due to poor tightness of the elastic conductive needle, so that the film coating of the wafer is invalid; in addition, the elastic conductive needle cannot keep good elasticity to the greatest extent in the clamping process, so that the defect of poor conductive performance is caused; for the metal ring conductive structure, a conductive edge with a diameter of about 3mm is reserved on the film plating surface of the wafer so that the metal ring is pressed on the wafer for technological conduction, the film plating cannot be formed on the wafer part pressed by the metal ring, the waste of the wafer part is caused, and the processing cost of the film plating of the wafer is increased for the wafer with high price.
Disclosure of Invention
The invention provides a double-wafer coating clamp, which solves the technical problem that the existing wafer coating clamp is easy to cause reduction of wafer coating yield.
The invention solves the technical problems by the following technical proposal:
The general conception of the invention is that: the method comprises the steps of adopting a design thought of a fixture and double wafers, sealing and arranging conductive plates between inner side surfaces of two fixture plates, respectively arranging wafer embedded grooves on outer side surfaces of the two fixture plates, arranging conductive plates in the wafer embedded grooves, arranging wafer plated with a film in advance in the conductive plates, arranging large-size telescopic conductive pins between the conductive plates and the conductive plates, and propping the large-size telescopic conductive pins against the conductive plates to enable the conductive plates, the large-size telescopic conductive pins and the conductive plates to form a power supply electrode of the wafer plated film; the method comprises the steps that an insulating fixture cover plate ring is formed by two silica gel sealing rings which are stacked together on the outer side of a wafer film coating surface, conducting rings are arranged between the two silica gel sealing rings in a sealing mode, radial protrusions are arranged on the inner circle of the fixture cover plate ring at equal intervals along the radial direction, the wafer is limited by the radial protrusions, small-size telescopic conducting pins are arranged in the radial protrusions, and the small-size telescopic conducting pins are propped against the film coating surface of the wafer to form another power supply electrode of wafer film coating.
The double-wafer film plating clamp comprises a left insulating clamping plate, a right insulating clamping plate, a conductive ring and a wafer, wherein the right vertical face of the left insulating clamping plate and the left vertical face of the right insulating clamping plate are connected together in a sealing way after being abutted, the conductive plate is embedded in a sealing way between the right vertical face of the left insulating clamping plate and the left vertical face of the right insulating clamping plate, a left conductive disc embedding groove is formed in the left vertical face of the left insulating clamping plate, a left conductive disc is embedded in the left conductive disc embedding groove, and the left conductive disc is electrically connected with the conductive plate; the left conductive plate is provided with a wafer, a clamp annular cover ring is arranged on the right vertical face of a left insulating clamping plate at the outer side of the wafer, clamp annular cover ring inward protruding tongues are arranged on the inner circle of the clamp annular cover ring at equal intervals along the radial direction, a conductive ring is pre-buried in the clamp annular cover ring, and small-size telescopic conductive needle screws are arranged on the clamp annular cover ring inward protruding tongues; the telescopic conductive needle screw consists of a screw end and a hollow screw rod, a pressure spring is arranged in a hollow screw rod hole, and a telescopic conductive needle is crimped on the pressure spring; the end of the telescopic conductive needle is propped against the outer circle of the film plating surface of the wafer, and the hollow screw rod is electrically connected with the conductive ring.
A large-size telescopic conductive needle screw is arranged between the conductive plate and the left conductive disc embedded groove, and the end head of the telescopic conductive needle in the large-size telescopic conductive needle screw is propped against the inner side surface of the left conductive disc; a right side conductive disc embedding groove is formed in the right side vertical face of the right side insulating clamping plate, a right side conductive disc is embedded in the right side conductive disc embedding groove, and the right side conductive disc is electrically connected with the conductive plate; in the right conductive plate, another wafer is arranged, and on the right vertical face of the right insulating clamping plate at the outer side of the other wafer, another clamp annular cover ring is arranged, and the structure of the other clamp annular cover ring is identical with that of the clamp annular cover ring.
The clamp annular cover ring is formed by overlapping and sealing an outer side silicon rubber ring and an inner side silicon rubber ring, and a conductive ring is embedded between the outer side silicon rubber ring and the inner side silicon rubber ring in a sealing manner; the method comprises the steps of arranging inward protruding tongues of an outer silicon rubber ring at equal intervals along the radial direction on the inner circle of the outer silicon rubber ring, arranging conductive needle through holes on the outer silicon rubber ring on the inward protruding tongues of the outer silicon rubber ring, arranging inward protruding tongues of the inner silicon rubber ring at equal intervals along the radial direction on the inner circle of the inner silicon rubber ring, arranging conductive needle through holes on the inner silicon rubber ring on the inward protruding tongues of the inner silicon rubber ring, arranging conductive ring inward protruding tongues at equal intervals along the radial direction on the inner circle of the conductive ring, arranging conductive needle through holes on the conductive ring on the inward protruding tongues of the conductive ring, arranging small-size telescopic conductive needle screws, and sequentially penetrating the conductive needle through holes on the outer silicon rubber ring, the conductive needle through holes on the conductive ring and the conductive needle through holes on the inner silicon rubber ring, and propping up telescopic conductive needle ends on the outer circle of a film plating surface of a wafer.
The conductive plate is in a T-shaped pendulum shape, and a large-size telescopic conductive pin screw penetration screw hole is formed in the conductive plate; a T-shaped pendulum-shaped conducting plate embedded groove is formed in the left vertical face of the right insulating clamping plate, and a screw head embedded groove of a telescopic conducting pin screw is formed in the conducting plate embedded groove; in scalable conductive needle screw cross-under screw, the spiro union has the scalable conductive needle screw of jumbo size, and the screw end of the scalable conductive needle screw of jumbo size is embedded in the screw end embedded groove, and the hollow screw rod of the scalable conductive needle screw of jumbo size wears out in the left side conductive disc embedded groove that sets up on the left side facade of left side insulation splint.
The end of the transverse slat at the top end of the T-shaped pendulum-shaped conductive plate is provided with a conductive screw penetration screw hole, an electrode lead-in U-shaped card is clamped between the top ends of the left insulating clamping plate and the right insulating clamping plate which are overlapped together, and the conductive screw penetrates through the electrode lead-in U-shaped card and is screwed with the conductive screw penetration screw hole.
The left conductive plate is provided with a conductive plate fixing screw hole, and after a rubber screw passes through the conductive plate fixing screw hole, the left conductive plate is fixed in the left conductive plate embedded groove; on the left side elevation of the outside silicon rubber ring, an electrode lead-in hole of the conducting ring is arranged, and a conducting ring electrode lead-in screw is arranged in the electrode lead-in hole.
The invention has compact integral structure and small clamp volume, can realize coating of two wafers at the same time, and the reserved area at the contact position of the conductive points of the wafers can be reduced to about 3 mm, thereby greatly improving the utilization rate of the wafers after coating, reducing the processing cost, reducing the vertical distance of the electrode lead-in of the clamp, and greatly improving the conductive performance through the telescopic conductive needle screw; the whole fixture is assembled, and is simple to process and convenient to assemble and disassemble.
Drawings
FIG. 1 is a schematic diagram of the structure of the present invention;
Fig. 2 is a diagram showing the matching relationship between the left insulating clamping plate 1 and the left conductive plate 6;
fig. 3 is a schematic view of the structure of the left conductive plate embedded groove 8 on the left insulating clamping plate 1 of the present invention;
Fig. 4 is a schematic structural view of a T-shaped pendulum-shaped conductive plate embedded groove 9 on the left side elevation of the right side insulating clamping plate 2 of the present invention;
Fig. 5 is a schematic structural view of the conductive plate 10 of the present invention;
fig. 6 is a schematic view of the structure of the small-sized retractable conductive pin screw 26 of the present invention;
fig. 7 is a schematic structural view of the left-side conductive plate 6 of the present invention;
FIG. 8 is a schematic view of the structure of a wafer 7 according to the present invention;
FIG. 9 is a schematic view of the structure of the clamp annular cover ring 5 of the present invention;
FIG. 10 is a schematic structural view of the outboard silicone rubber ring 18 of the present invention;
Fig. 11 is a schematic structural view of the conductive ring 23 of the present invention.
Detailed Description
The invention is described in detail below with reference to the attached drawing figures:
The double-wafer film plating clamp comprises a left insulating clamping plate 1, a right insulating clamping plate 2, a conductive plate 10, a conductive ring 23 and a wafer 7, wherein the right vertical face of the left insulating clamping plate 1 and the left vertical face of the right insulating clamping plate 2 are connected together in a sealing way after being abutted, the conductive plate 10 is embedded in a sealing way between the right vertical face of the left insulating clamping plate 1 and the left vertical face of the right insulating clamping plate 2, a left conductive disc embedding groove 8 is arranged on the left vertical face of the left insulating clamping plate 1, a left conductive disc 6 is embedded in the left conductive disc embedding groove 8, and the left conductive disc 6 and the conductive plate 10 are electrically connected together; in the left conductive plate 6, a wafer 7 is arranged, a clamp annular cover ring 5 is arranged on the right side elevation of the left insulating clamping plate 1 outside the wafer 7, clamp annular cover ring inward protruding tongues are arranged on the inner circle of the clamp annular cover ring 5 at equal intervals along the radial direction, a conductive ring 23 is pre-buried in the clamp annular cover ring 5, and small-size telescopic conductive needle screws 26 are arranged on the clamp annular cover ring inward protruding tongues; the telescopic conductive needle screw 26 consists of a screw end 14 and a hollow screw rod 15, a pressure spring is arranged in a hole of the hollow screw rod 15, and a telescopic conductive needle 16 is crimped on the pressure spring; the end of the telescopic conductive needle 16 is propped against the outer circle of the film plating surface of the wafer 7, and the hollow screw 15 is electrically connected with the conductive ring 23.
A large-size telescopic conductive needle screw is arranged between the conductive plate 10 and the left conductive disc embedded groove 8, and the end head of the telescopic conductive needle in the large-size telescopic conductive needle screw is propped against the inner side surface of the left conductive disc 6; on the right side elevation of the right insulating clamping plate 2, a right conductive disc embedding groove is arranged, a right conductive disc is embedded in the right conductive disc embedding groove, and the right conductive disc is electrically connected with the conductive plate 10; in the right-side conductive plate, another wafer is arranged, and on the right-side vertical face of the right-side insulating clamping plate 2 outside the other wafer, another clamp annular cover ring is arranged, and the structure of the other clamp annular cover ring is identical to that of the clamp annular cover ring 5.
The clamp annular cover ring 5 is formed by laminating and sealing an outer side silicon rubber ring 18 and an inner side silicon rubber ring 19, and a conductive ring 23 is pre-buried between the outer side silicon rubber ring 18 and the inner side silicon rubber ring 19 in a sealing manner; on the inner circle of the outer silicone rubber ring 18, there are provided with outer silicone rubber ring inward protruding tongues 20 at equal intervals in the radial direction, on the outer silicone rubber ring inward protruding tongues 20, there are provided outer silicone rubber ring upper conductive needle penetration holes 21, on the inner circle of the inner silicone rubber ring 19, there are provided inner silicone rubber ring inward protruding tongues 22 at equal intervals in the radial direction, on the inner silicone rubber ring inward protruding tongues 22, there are provided inner silicone rubber ring upper conductive needle penetration holes, on the inner circle of the conductive ring 23, there are provided conductive ring inward protruding tongues 24 at equal intervals in the radial direction, on the conductive ring inward protruding tongues 24, there are provided conductive ring upper conductive needle penetration screw holes 25, small-sized telescopic conductive needle screws 26, after passing through the outer silicone rubber ring upper conductive needle penetration holes 21, the conductive ring upper conductive needle penetration holes 25 and the inner silicone rubber ring upper conductive needle penetration holes in sequence, the tips of the small-sized telescopic conductive needles 16 on the small-sized telescopic conductive needles 16 are butted against the outer surface of the wafer 7.
The conductive plate 10 is in a T-shaped pendulum shape, and a large-size telescopic conductive pin screw penetration screw hole 13 is formed in the conductive plate 10; a T-shaped pendulum-shaped conducting plate embedded groove 9 is formed in the left vertical face of the right insulating clamping plate 2, and a screw end embedded groove 12 of a telescopic conducting pin screw is formed in the conducting plate embedded groove 9; in the telescopic conductive needle screw penetration screw hole 13, a large-size telescopic conductive needle screw is screwed, the screw end of the large-size telescopic conductive needle screw is embedded in the screw end embedding groove 12, and the hollow screw rod of the large-size telescopic conductive needle screw penetrates out into the left conductive disc embedding groove 8 arranged on the left vertical face of the left insulating clamping plate 1; the lead-in electrode is electrically connected with the non-coating surface of the wafer 7 through the electrode lead-in U-shaped card 3, the conductive screw 4, the telescopic conductive pin screw penetration screw hole 13, the conductive plate 10, the telescopic conductive pin screw with large size and the conductive disc.
The end of the transverse slat at the top end of the T-shaped pendulum-shaped conductive plate 10 is provided with a conductive screw penetration screw hole 11, an electrode lead-in U-shaped card 3 is clamped between the top ends of the left insulating clamping plate 1 and the right insulating clamping plate 2 which are overlapped together, and the conductive screw 4 is screwed with the conductive screw penetration screw hole 11 after penetrating through the electrode lead-in U-shaped card 3.
A conductive plate fixing screw hole 17 is formed in the left conductive plate 6, and after a rubber screw passes through the conductive plate fixing screw hole 17, the left conductive plate 6 is fixed in the left conductive plate embedding groove 8; an electrode introduction hole 27 of the conductive ring 23 is provided on the left side elevation of the outer silicone rubber ring 18, and a conductive ring electrode introduction screw 28 is provided in the electrode introduction hole 27; the other electrode is electrically connected with the film plating surface of the wafer 7 through a conducting ring electrode lead-in screw 28, a conducting ring 23, a conducting ring upper conducting needle threading screw hole 25 arranged on the conducting ring inward bulge tongue 24, a small-size telescopic conducting needle screw 26 and a telescopic conducting needle 16; the improvement of the conductivity of the electroplating film is realized by the telescopic conductive needle on the telescopic conductive needle screw.
Claims (6)
1. The double-wafer film plating clamp comprises a left insulating clamping plate (1), a right insulating clamping plate (2), a conductive plate (10), a conductive ring (23) and a wafer (7), and is characterized in that the right vertical face of the left insulating clamping plate (1) and the left vertical face of the right insulating clamping plate (2) are connected together in a sealing manner after being abutted, the conductive plate (10) is embedded in a sealing manner between the right vertical face of the left insulating clamping plate (1) and the left vertical face of the right insulating clamping plate (2), a left conductive disc embedding groove (8) is formed in the left vertical face of the left insulating clamping plate (1), a left conductive disc (6) is embedded in the left conductive disc embedding groove (8), and the left conductive disc (6) and the conductive plate (10) are electrically connected together; in the left conductive disc (6), a wafer (7) is arranged, a clamp annular cover ring (5) is arranged on the right side vertical face of a left insulating clamping plate (1) at the outer side of the wafer (7), clamp annular cover ring inward protruding tongues are arranged on the inner circle of the clamp annular cover ring (5) at equal intervals along the radial direction, conductive rings (23) are embedded in the clamp annular cover ring (5), and small-size telescopic conductive needle screws (26) are arranged on the clamp annular cover ring inward protruding tongues; the telescopic conductive needle screw (26) consists of a screw end (14) and a hollow screw rod (15), a pressure spring is arranged in a hole of the hollow screw rod (15), and a telescopic conductive needle (16) is crimped on the pressure spring; the end of the telescopic conductive needle (16) is propped against the outer circle of the film plating surface of the wafer (7), and the hollow screw rod (15) is electrically connected with the conductive ring (23).
2. The double-wafer film plating fixture according to claim 1, wherein a large-size telescopic conductive pin screw is arranged between the conductive plate (10) and the left conductive plate embedded groove (8), and the end head of the telescopic conductive pin in the large-size telescopic conductive pin screw is propped against the inner side surface of the left conductive plate (6); a right side conductive disc embedding groove is formed in the right side vertical face of the right side insulating clamping plate (2), a right side conductive disc is embedded in the right side conductive disc embedding groove, and the right side conductive disc is electrically connected with the conductive plate (10); in the right conductive disc, another wafer is arranged, and on the right vertical face of a right insulating clamping plate (2) at the outer side of the other wafer, another clamp annular cover ring is arranged, and the structure of the other clamp annular cover ring is identical with that of the clamp annular cover ring (5).
3. The double-wafer film plating clamp according to claim 2, wherein the clamp annular cover ring (5) is formed by laminating and sealing an outer silicon rubber ring (18) and an inner silicon rubber ring (19), and a conductive ring (23) is pre-buried between the outer silicon rubber ring (18) and the inner silicon rubber ring (19) in a sealing manner; an inner circle of an outer silicon rubber ring (18) is provided with an inner protruding tongue (20) of the outer silicon rubber ring at equal intervals along the radial direction, an inner conductive needle threading hole (21) of the outer silicon rubber ring is provided on the inner protruding tongue (20) of the outer silicon rubber ring, an inner protruding tongue (22) of the inner silicon rubber ring is provided at equal intervals along the radial direction on the inner circle of the inner silicon rubber ring (19), an inner conductive needle threading hole of the inner silicon rubber ring is provided on the inner protruding tongue (22) of the inner silicon rubber ring, an inner protruding tongue (24) of the conductive ring is provided at equal intervals along the radial direction on the inner protruding tongue (23), a conductive needle threading screw hole (25) of the conductive ring is provided on the inner protruding tongue (24), a small-size telescopic conductive needle screw (26) sequentially penetrates through the inner conductive needle threading hole (21) of the outer silicon rubber ring, the conductive needle threading screw hole (25) of the conductive ring and the inner conductive needle threading hole of the inner silicon rubber ring along the left-right direction, and a telescopic conductive needle threading end (16) of the small-size telescopic needle threading screw on the wafer (7) is abutted against an outer circular conductive needle (7).
4. A double wafer coating clamp according to claim 3, characterized in that the conductive plate (10) is shaped like a T-shaped pendulum, and a large-sized telescopic conductive pin screw penetration screw hole (13) is arranged on the conductive plate (10); a T-shaped pendulum-shaped conducting plate embedded groove (9) is formed in the left vertical face of the right insulating clamping plate (2), and a screw end embedded groove (12) of a telescopic conducting pin screw is formed in the conducting plate embedded groove (9); in scalable conductive needle screw cross-under screw (13), the spiro union has the scalable conductive needle screw of jumbo size, and the screw end of scalable conductive needle screw of jumbo size is embedded in screw end embedded groove (12), and the hollow screw rod of scalable conductive needle screw of jumbo size wears out in left side conducting disc embedded groove (8) that set up on the left side facade of left side insulating splint (1).
5. The double-wafer film plating fixture according to claim 4, wherein a conductive screw penetrating screw hole (11) is formed at the end part of the transverse slat at the top end of the T-shaped pendulum-shaped conductive plate (10), an electrode introducing U-shaped clamp (3) is clamped between the top ends of the left insulating clamping plate (1) and the right insulating clamping plate (2) which are stacked together, and the conductive screw (4) is screwed with the conductive screw penetrating screw hole (11) after penetrating through the electrode introducing U-shaped clamp (3).
6. A twin wafer plating jig according to claim 3, wherein a conductive plate fixing screw hole (17) is provided in the left conductive plate (6), and after a rubber screw passes through the conductive plate fixing screw hole (17), the left conductive plate (6) is fixed in the left conductive plate insertion groove (8); an electrode introduction hole (27) of a conductive ring (23) is provided on the left side elevation of the outer silicone rubber ring (18), and a conductive ring electrode introduction screw (28) is provided in the electrode introduction hole (27).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111298590.7A CN114197021B (en) | 2021-11-04 | 2021-11-04 | Double-wafer film coating clamp |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111298590.7A CN114197021B (en) | 2021-11-04 | 2021-11-04 | Double-wafer film coating clamp |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114197021A CN114197021A (en) | 2022-03-18 |
| CN114197021B true CN114197021B (en) | 2024-06-04 |
Family
ID=80646797
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111298590.7A Active CN114197021B (en) | 2021-11-04 | 2021-11-04 | Double-wafer film coating clamp |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114197021B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115896881B (en) * | 2022-11-17 | 2023-06-13 | 安徽建筑大学 | Semiconductor wafer electroplating system capable of preventing deflection |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11172492A (en) * | 1997-12-15 | 1999-06-29 | Ebara Corp | Plating jig for semiconductor wafer |
| JPH11200096A (en) * | 1997-11-06 | 1999-07-27 | Ebara Corp | Plating jig for wafer |
| US6080291A (en) * | 1998-07-10 | 2000-06-27 | Semitool, Inc. | Apparatus for electrochemically processing a workpiece including an electrical contact assembly having a seal member |
| CN101220500A (en) * | 2007-08-29 | 2008-07-16 | 中国电子科技集团公司第二研究所 | Wafer convex point producing hanging fixture |
| CN202054916U (en) * | 2011-02-24 | 2011-11-30 | 深圳市常兴金刚石磨具有限公司 | Work fixture capable of simultaneously electroplating multiple cutting discs |
| WO2014076781A1 (en) * | 2012-11-14 | 2014-05-22 | 株式会社Ｊｃｕ | Substrate plating jig |
| CN208455094U (en) * | 2018-05-29 | 2019-02-01 | 苏州亚硕新能源有限公司 | Wafer electroplating fixture sealing conducting ring |
| CN111394776A (en) * | 2020-04-07 | 2020-07-10 | 中国电子科技集团公司第十三研究所 | Self-locking hanger for double-sided electroplating of wafer |
| CN112522769A (en) * | 2020-12-23 | 2021-03-19 | 西北电子装备技术研究所(中国电子科技集团公司第二研究所) | Electroplating bath body capable of realizing synchronous coating of double wafers in same bath |
| CN113564676A (en) * | 2021-07-30 | 2021-10-29 | 新阳硅密（上海）半导体技术有限公司 | Conductive sealing assembly and electroplating clamp comprising same |
-
2021
- 2021-11-04 CN CN202111298590.7A patent/CN114197021B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11200096A (en) * | 1997-11-06 | 1999-07-27 | Ebara Corp | Plating jig for wafer |
| JPH11172492A (en) * | 1997-12-15 | 1999-06-29 | Ebara Corp | Plating jig for semiconductor wafer |
| US6080291A (en) * | 1998-07-10 | 2000-06-27 | Semitool, Inc. | Apparatus for electrochemically processing a workpiece including an electrical contact assembly having a seal member |
| CN101220500A (en) * | 2007-08-29 | 2008-07-16 | 中国电子科技集团公司第二研究所 | Wafer convex point producing hanging fixture |
| CN202054916U (en) * | 2011-02-24 | 2011-11-30 | 深圳市常兴金刚石磨具有限公司 | Work fixture capable of simultaneously electroplating multiple cutting discs |
| WO2014076781A1 (en) * | 2012-11-14 | 2014-05-22 | 株式会社Ｊｃｕ | Substrate plating jig |
| CN208455094U (en) * | 2018-05-29 | 2019-02-01 | 苏州亚硕新能源有限公司 | Wafer electroplating fixture sealing conducting ring |
| CN111394776A (en) * | 2020-04-07 | 2020-07-10 | 中国电子科技集团公司第十三研究所 | Self-locking hanger for double-sided electroplating of wafer |
| CN112522769A (en) * | 2020-12-23 | 2021-03-19 | 西北电子装备技术研究所(中国电子科技集团公司第二研究所) | Electroplating bath body capable of realizing synchronous coating of double wafers in same bath |
| CN113564676A (en) * | 2021-07-30 | 2021-10-29 | 新阳硅密（上海）半导体技术有限公司 | Conductive sealing assembly and electroplating clamp comprising same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114197021A (en) | 2022-03-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN114197021B (en) | Double-wafer film coating clamp | |
| US20140251798A1 (en) | Substrate electroplating jig | |
| TWI423378B (en) | Electrostatic chuck | |
| JP6713916B2 (en) | Substrate holder, plating apparatus, and substrate holder manufacturing method | |
| US20220170173A1 (en) | Substrate carrier and electrochemical deposition system | |
| CN114351225B (en) | Electroplating hanger and electroplating device | |
| CN105648509A (en) | Electroplating clamp compatible with single wafers of multiple sizes | |
| CN114892248B (en) | Electroplating clamp | |
| CN103617962A (en) | Substrate electroplating clamp | |
| KR100968195B1 (en) | Wafer zig for plating apparatus | |
| JP2017137523A (en) | Semiconductor wafer | |
| CN211079388U (en) | Wafer through hole copper electroplating clamp | |
| KR100981159B1 (en) | Wafer zig for plating apparatus | |
| CN111850664A (en) | Electroplating clamp for solar cell | |
| JP2003213497A (en) | Electronic part and plating tool and plating method using the same | |
| US20070114264A1 (en) | Mesotube electode attachment | |
| CN211605172U (en) | Fixing device for preventing silicon wafer from being plated in winding manner and graphite boat | |
| JP4939484B2 (en) | Cathode cartridge for electroplating | |
| CN111455438B (en) | Local electroplating fixture for relay base | |
| CN113564676A (en) | Conductive sealing assembly and electroplating clamp comprising same | |
| JP5576848B2 (en) | Jig for holding plate member | |
| CN219824406U (en) | Double-sided electroplating clamp for glass wafer | |
| CN217692040U (en) | Auxiliary rapid heating substrate ultrasonic welding device for resistance welding | |
| CN219610458U (en) | Split type basket of flowers pole | |
| CN215757707U (en) | Conductive sealing assembly and electroplating clamp comprising same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |