CN114195245A - Device and method for recycling corrosive liquid - Google Patents
Device and method for recycling corrosive liquid Download PDFInfo
- Publication number
- CN114195245A CN114195245A CN202010909301.1A CN202010909301A CN114195245A CN 114195245 A CN114195245 A CN 114195245A CN 202010909301 A CN202010909301 A CN 202010909301A CN 114195245 A CN114195245 A CN 114195245A
- Authority
- CN
- China
- Prior art keywords
- tank
- liquid
- corrosive liquid
- concentration
- process tank
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007788 liquid Substances 0.000 title claims abstract description 196
- 238000000034 method Methods 0.000 title claims abstract description 155
- 238000004064 recycling Methods 0.000 title claims abstract description 44
- 230000008569 process Effects 0.000 claims abstract description 139
- 238000011084 recovery Methods 0.000 claims abstract description 73
- 238000012545 processing Methods 0.000 claims abstract description 35
- 239000000428 dust Substances 0.000 claims abstract description 18
- 238000012544 monitoring process Methods 0.000 claims abstract description 14
- 239000004065 semiconductor Substances 0.000 claims abstract description 9
- 238000005530 etching Methods 0.000 claims description 68
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052681 coesite Inorganic materials 0.000 claims description 8
- 229910052906 cristobalite Inorganic materials 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- 229910052682 stishovite Inorganic materials 0.000 claims description 8
- 229910052905 tridymite Inorganic materials 0.000 claims description 8
- 238000012546 transfer Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 239000000243 solution Substances 0.000 description 57
- 235000012431 wafers Nutrition 0.000 description 24
- 230000008859 change Effects 0.000 description 8
- 238000001914 filtration Methods 0.000 description 8
- 150000004767 nitrides Chemical class 0.000 description 7
- 238000005260 corrosion Methods 0.000 description 6
- 230000007797 corrosion Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F1/00—Treatment of water, waste water, or sewage
- C02F1/58—Treatment of water, waste water, or sewage by removing specified dissolved compounds
- C02F1/60—Silicon compounds
-
- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F1/00—Treatment of water, waste water, or sewage
- C02F1/28—Treatment of water, waste water, or sewage by sorption
-
- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F2101/00—Nature of the contaminant
- C02F2101/10—Inorganic compounds
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Hydrology & Water Resources (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Water Supply & Treatment (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Weting (AREA)
Abstract
The invention discloses a device and a method for recycling corrosive liquid, which are applied to the field of semiconductor manufacturing, and the device comprises: a recovery tank connected with the process tank of the batch processing equipment, for receiving and storing the corrosive liquid discharged from the process tank and adding SiO removed corrosive liquid into the process tank2The treated corrosive liquid; the dust removal device is connected with the recovery tank and is used for removing SiO from the corrosive liquid in the recovery tank2Processing; the first concentration meter is used for monitoring the Si concentration of the corrosive liquid in the recovery tank; and the second concentration meter is used for monitoring the Si concentration of the corrosive liquid in the process tank. The invention can prolong the liquid changing period and save the usage amount of the corrosive liquid.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to a device and a method for recycling corrosive liquid.
Background
After the etching process for removing the Nitride film (SiN), the Si concentration in the HSN (High Selectivity Nitride) etching solution increases and adheres to Oxide film quality, and the etching Selectivity of the Nitride film (SiN) and Oxide film (Oxide) is changed, so that the HSN etching solution cannot be reused after being used once, and in a general wafer batch processing apparatus, the etching solution needs to be replaced after being used 4 times or more for 50 wafers at a time. In addition, the equipment cannot be used in the liquid change time, resulting in an increase in the equipment stop time. Resulting in increased costs and increased equipment downtime.
Disclosure of Invention
In view of the above technical problems in the prior art, embodiments of the present invention provide an apparatus and a method for recycling an etching solution.
In a first aspect, an embodiment of the present invention provides an apparatus for recycling an etching solution, including:
a recycling tank connected with the process tank of the wafer batch processing equipment, the recycling tank being used for receiving and storing the corrosive liquid discharged from the process tank and adding the SiO removed corrosive liquid into the process tank2The treated corrosive liquid;
the dust removal device is connected with the recovery tank and is used for removing SiO from the corrosive liquid in the recovery tank2Processing;
the first concentration meter is used for monitoring the Si concentration of the corrosive liquid in the recovery tank;
and the second concentration meter is used for monitoring the Si concentration of the corrosive liquid in the process tank.
Optionally, the liquid outlet of the process tank is connected to the liquid inlet of the recovery tank through a liquid discharge pipeline, and the liquid inlet of the process tank is connected to the liquid outlet of the recovery tank through a liquid return pipeline.
Optionally, the liquid discharge pipeline and the liquid return pipeline are provided with a first heater and/or a delivery pump.
Optionally, the liquid discharge pipeline and the liquid return pipeline share the same middle-section pipeline, and the first heater and/or the delivery pump are/is arranged on the middle-section pipeline.
Optionally, a liquid discharge on-off valve is arranged on the liquid discharge pipeline relative to the proximal pipe section of the process tank; a circulation on-off valve is arranged on the liquid return pipeline relative to the proximal end pipe section of the recovery tank; and a liquid return on-off valve is arranged on the liquid return pipeline relative to the near-end pipe section of the process tank.
Optionally, the dust removing device comprises a plurality of SiO connected in parallel or in series2And (3) a filter.
Optionally, the SiO2The filter is internally provided with a filter structure with the flow rate of 5-50 liters/minute, wherein the material of the filter structure is an oxide film adsorbing silicon.
Optionally, the apparatus further comprises: and the capacity monitor is arranged in the process tank and used for monitoring that the amount of the corrosive liquid discharged from the process tank line to the recovery tank is 10-80% of the whole capacity of the process tank.
In a second aspect, an embodiment of the present invention provides a semiconductor processing apparatus, including: wafer batch processing equipment and an etching solution recycling device connected with a process tank of the wafer batch processing equipment, wherein the etching solution recycling device is as described in any one of the embodiments of the first aspect.
In a third aspect, an embodiment of the present invention provides a method for recycling an etching solution, where in the second aspect, the method is performed by semiconductor processing equipment, and includes:
when the concentration of Si of the corrosive liquid in the process tank is monitored to be increased to a first concentration, the corrosive liquid in the process tank is discharged into the recovery tank, and new corrosive liquid is synchronously injected into the process tank or SiO in the recovery tank is removed2The treated corrosive liquid;
in the process of carrying out the etching process of the current batch in the process tank, the SiO is removed by circulating the corrosive liquid in the recovery tank through the dust removal device2Until the Si concentration of the corrosive liquid in the recovery tank is reduced to a second concentration, wherein the second concentration is lower than the first concentration;
upon monitoring of said toolWhen the Si concentration of the corrosive liquid in the process tank is increased to a first concentration, injecting the corrosive liquid into the process tank to remove SiO in the recovery tank2And (5) the treated corrosive liquid.
One or more technical solutions provided in the embodiments of the present invention have at least the following technical effects or advantages:
the embodiment of the invention sets the device for recycling the corrosive liquid connected with the wafer batch processing equipment, and comprises: a recycling tank connected with the process tank of the wafer batch processing equipment, receiving and storing the corrosive liquid discharged from the process tank, and adding the SiO removed solution into the process tank2The treated corrosive liquid; the dust removal device is connected with the recovery tank to remove SiO2 from the corrosive liquid in the recovery tank; the first concentration meter is used for monitoring the Si concentration of the corrosive liquid in the recovery tank; and a second concentration meter monitors the Si concentration of the corrosive liquid in the process tank. Therefore, the corrosion liquid can be continuously used, so that the using amount of the corrosion liquid is saved, the liquid changing period is prolonged, the equipment stop caused by liquid changing is reduced, and the equipment capacity is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
FIG. 1 is a schematic diagram of a wafer batch processing apparatus;
FIG. 2 is a schematic view of the connection between the etching solution recycling apparatus and the wafer batch processing apparatus according to the embodiment of the present invention;
FIG. 3 is a flow diagram of an etching process in an embodiment of the present invention;
FIG. 4 is a flow diagram of a corrosive liquid from the recovered drain in an embodiment of the present invention;
FIG. 5 is a flow diagram of a recycled filtered corrosive liquid in an embodiment of the present invention;
FIG. 6 is a flow diagram of an etchant injected by the back-flow in an embodiment of the present invention;
FIG. 7 is a schematic flow chart illustrating a method for recycling an etchant according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In a first aspect, an embodiment of the present invention provides an apparatus for recycling an etchant, which is connected to a cleaning device in a semiconductor silicon nitride film removal process. Specifically, the cleaning apparatus may be a wafer Batch processing apparatus (Batch).
As shown in fig. 1, the wafer batch processing apparatus includes: a process tank 1, a circulation pump 2, a second heater 3, a second concentration meter 7, and a particulate filter 15. The circulating pump 2 and the second heater 3 are connected with the process tank 1 through the first circulating pipeline 16, the circulating pump 2 is used for enabling the corrosive liquid in the process tank 1 to be externally circulated, and the second heater 3 is used for heating the externally circulated corrosive liquid so as to maintain the temperature of the corrosive liquid in the process tank 1. The particulate filter 15 is used to filter particulates from the externally circulated corrosive liquid. Specifically, the batch processing equipment may be specifically HSN batch processing equipment.
It should be noted that the etching solution recycling apparatus provided by the embodiment of the present invention is not limited to be connected to the wafer batch processing apparatus described above and shown in fig. 1.
Referring to fig. 2, an apparatus for recycling an etching solution according to an embodiment of the present invention includes:
a recovery tank 4 connected with the process tank 1 of the HSN batch processing equipment, wherein the recovery tank 4 is used for receiving and storing the corrosive liquid discharged from the process tank 1 and adding the SiO removed corrosive liquid into the process tank 12The treated corrosive liquid; a dust removing device 5 connected to the recovery tank 4 for removing dustThe dust device 5 is used for removing SiO from the corrosive liquid in the recovery tank 42Processing; the first concentration meter 6 is used for monitoring the Si concentration of the corrosive liquid in the recovery tank 4; and the second concentration meter 7 is used for monitoring the Si concentration of the corrosive liquid in the process tank 1.
It should be noted that one or more etching solution recycling apparatuses may be connected to the same wafer batch processing apparatus. If the same wafer batch processing equipment is connected with a plurality of corrosive liquid recycling devices, when the process tank 1 of the wafer batch processing equipment discharges the corrosive liquid to one of the corrosive liquid recycling devices, or one of the corrosive liquid recycling devices circularly filters SiO in the corrosive liquid2In the process, SiO removed is added into the process tank 1 through other corrosive liquid recycling devices2And (5) the treated corrosive liquid.
In the embodiment of the invention, the liquid outlet of the process tank 1 is connected with the liquid inlet of the recovery tank 4 through the liquid drainage pipeline 8, so that when the Si concentration of the corrosive liquid in the process tank 1 is increased to the first concentration, the corrosive liquid with the Si concentration exceeding the standard in the process tank 1 can be drained to the recovery tank 4 through the liquid drainage pipeline 8.
The liquid inlet of the process tank 1 is connected with the liquid outlet of the recovery tank 4 through the liquid return pipeline 9, so that when the Si concentration of the corrosive liquid in the recovery tank 4 is reduced to the second concentration, the corrosive liquid with the Si concentration reaching the standard can be injected into the process tank 1 through the liquid return pipeline 9.
As for the connection method between the process tank 1 and the recovery tank 4, the following first embodiment or second embodiment can be adopted:
the first implementation mode comprises the following steps:
the liquid discharge pipe 8 and the liquid return pipe 9 may be independent pipes (not shown), the liquid discharge pipe 8 and the liquid return pipe 9 are both provided with a delivery pump 11, and only the liquid return pipe 9 may be provided with a first heater 10 for heating the corrosive liquid to be injected into the process tank 1, so that the corrosive liquid to be injected into the process tank 1 satisfies a required process temperature. Wherein, in the etching process for removing the silicon nitride film, the etching solution uses H with high selectivity ratio3PO4Solution at a process temperature ofA high temperature of 160 ℃ or higher is required to remove SiO by the first heater 102The latter etching solution is heated to 160 ℃ before being injected into the process tank 1.
In the embodiment in which the drain line 8 and the return line 9 are independent lines, a second circulation line may be additionally provided to connect between the dust removing device 5 and the recovery tank 4 (this is not shown), and the corrosion liquid in the recovery tank 4 may be externally circulated by the second circulation line and the dust removing device 5 to remove SiO2. Further, a first heater 10 may be further provided on the second circulation duct and the drain duct 8.
Specifically, a liquid discharge on-off valve 12 is arranged on the liquid discharge pipeline 8 to control the recovery and liquid discharge of the process tank 1 to the recovery tank 4; a liquid return on-off valve 13 is arranged on the liquid return pipeline 9 to control the recovery tank 4 to inject SiO removal water into the process tank 12And (5) the treated corrosive liquid.
By the first embodiment, the etching solution in the recovery tank 4 can be injected into the process tank 1 at the same time as the etching solution in the process tank 1 is recovered in the recovery tank 4. Namely, the three steps of liquid recovery and drainage, liquid return and injection and circulating filtration can be synchronously carried out.
The second embodiment:
specifically, referring to fig. 2, the liquid discharge pipe 8 and the liquid return pipe 9 may share the same middle-stage pipe, and the first heater 10 and/or the delivery pump 11 are/is disposed on the middle-stage pipe, and more preferably, by disposing the first heater 10 and the delivery pump 11 on the middle-stage pipe, the corrosion solution can be continuously heated based on the same heater (i.e., the first heater 10) in three different steps of liquid discharge recovery, liquid return injection, and circulating filtration, and the purpose of delivering the corrosion solution based on the same delivery pump 11 is met, so that the number of devices used by the corrosion solution recycling apparatus is reduced, and the cost is reduced.
Further, in order to realize three different steps of liquid recovery and drainage, liquid return and injection and circulating filtration under the condition that the liquid drainage pipeline 8 and the liquid return pipeline 9 can share the same middle-section pipeline, an on-off valve is required to be arranged at a more reasonable position to realize the following steps:
referring to fig. 2, a liquid discharge on-off valve 12 is provided on the liquid discharge line 8 with respect to the proximal pipe section of the process tank 1; so as to control the recycling and drainage of the process tank 1 to the recycling tank 4, a circulation on-off valve 14 is arranged on the liquid returning pipeline 9 relative to the near-end pipe section of the recycling tank 4 so as to control the circulation filtration of the corrosive liquid in the recycling tank 4. A liquid return on-off valve 13 is arranged on the liquid return pipeline 9 relative to the near-end pipe section of the process tank 1 so as to control the injection of the corrosive liquid in the recovery tank 4 into the process tank 1.
As shown in fig. 4, if the drain on/off valve 12 is in the open state and the return on/off valve 13 and the circulation on/off valve 14 are in the closed state, the corrosive liquid in the process tank 1 is recovered to the recovery tank 4 through the transfer pump 11, the first heater 10 and the dust removing device 5. Referring to FIG. 5, if the drain on-off valve 12 and the return on-off valve 13 are in the closed state and the circulation on-off valve 14 is in the open state, the corrosive liquid having been discharged into the recovery tank 4 is externally circulated via the transfer pump 11, the first heater 10 and the dust removing device 5 to remove SiO therein2. Referring to fig. 6, if the drain on-off valve 12 is in the closed state and the liquid return on-off valve 13 and the circulation on-off valve 14 are in the open state, the etching liquid in the reclamation tank 4 can be injected into the process tank 1.
Furthermore, to ensure that SiO removed can be added immediately to the process tank 12The apparatus may further include a transit tank (not shown) for the treated etching solution.
Specifically, the transfer tank may be disposed on the drain line 8 between the process tank 1 and the recovery tank 4, and is used for temporarily storing the corrosive liquid discharged from the process tank 1. When the concentration of Si in the corrosive liquid in the process tank 1 reaches a first concentration, the corrosive liquid in the process tank 1 is discharged into the transfer tank for temporary storage, and the SiO in the recovery tank 4 is removed2The corrosive liquid reaching the second concentration is injected into the process tank 1, and finally the corrosive liquid in the transit tank is discharged into the recovery tank 4 to remove SiO2And (6) processing.
Specifically, the transfer tank may be disposed on the liquid return pipe 9 between the process tank 1 and the recovery tank 4 for storing the SiO-removed liquid discharged from the recovery tank 42And (5) the subsequent corrosive liquid. In the workerWhen the concentration of Si in the corrosive liquid in the process tank 1 reaches a first concentration, the corrosive liquid in the process tank 1 is discharged into the recovery tank 4, and SiO temporarily stored in the transfer tank is removed2The latter etching solution is injected into the process tank 1.
In the practice of the invention, the dust removal device 5 comprises a plurality of SiO in parallel or in series2And (3) a filter. Specifically, each SiO2The inside of the filter can be a filtering structure with the flow rate of 5-50L/min, wherein the material of the filtering structure is an oxide film for adsorbing silicon, so that the HSN corrosive liquid can remove SiO in the filtering structure through the filtering structure2Component (b) to reduce the concentration of Si in the etching solution.
Specifically, referring to fig. 2, the first concentration meter 6 is disposed at the liquid outlet of the recovery tank 4, and is configured to monitor the Si concentration of the corrosive liquid in the recovery tank 4; the second concentration meter 7 is arranged at the liquid outlet of the process tank 1 and is used for monitoring the Si concentration of the corrosive liquid in the process tank 1.
Specifically, a capacity monitor is arranged in the process tank 1 for monitoring the capacity of the corrosive liquid in the process tank 1. Whether the liquid discharge amount of the process tank 1 is within the range of 10% to 80% of the entire capacity of the process tank 1 is monitored based on a capacity monitor.
Based on the same inventive concept, an embodiment of the present invention further provides a semiconductor process apparatus, including: the system comprises a wafer batch processing device and an etching solution recycling device connected with a process tank 1 of the wafer batch processing device, wherein the etching solution recycling device is as described in the first aspect, and is not described herein again for the sake of brevity of the description.
Based on the same inventive concept, an embodiment of the present invention provides an etching solution recycling method, where the semiconductor process equipment according to the first aspect is implemented, and with reference to fig. 7, the etching solution recycling method includes:
step S1, when the concentration of Si in the corrosive liquid in the process tank 1 is monitored to be increased to the first concentration, discharging the corrosive liquid in the process tank 1 into the recovery tank 4, and synchronously injecting new corrosive liquid into the process tank 1 or removing SiO in the recovery tank 42And (5) the treated corrosive liquid.
Step S2, in the process tank 1In the process of carrying out the etching process of the current batch, the corrosive liquid in the recovery tank 4 is circularly removed with SiO through the dust removal device 52And reducing the Si concentration of the corrosive liquid in the recovery tank 4 to a second concentration, wherein the second concentration is lower than the first concentration.
Step S3, when the concentration of Si in the corrosive liquid in the process tank 1 is monitored to be increased to the first concentration, injecting the corrosive liquid into the process tank 1 to the recovery tank 4 to remove SiO2The treated corrosive liquid and the corrosive liquid discharged from the process tank 1 are discharged to the recovery tank 4.
It should be noted that the specific concentration values of the first concentration and the second concentration are related to the type of the semiconductor device and the requirements of the specific process, and the specific concentration values are not limited herein.
In order to understand the embodiment of the present invention, the following describes in detail the method for recycling the etching solution provided by the embodiment of the present invention with reference to fig. 4 to 6:
before starting the etching process of the current batch, the etching solution in the recovery tank 4 and the etching solution in the process tank 1 are discharged completely, so that the etching solution in the recovery tank 4 is not recovered. Before starting the etching process of the current batch, a normal-temperature brand-new etching solution needs to be added into the process tank 1, and the brand-new etching solution in the process tank 1 is heated by the second heater 3 to a process temperature required for etching, such as: h3PO4The etching process of removing the nitride film (SiN) by the etchant requires heating to 160 ℃.
Next, referring to FIG. 3, the etching process for removing the nitride film from the wafer is performed by the etching solution reaching the process temperature in the process tank 1, and the SiO content of the etching solution in the process tank 1 increases with the number of wafers processed2The accumulation changes the etching selectivity of the nitride film (SiN) and the Oxide film (Oxide). At this point, the etching solution in the process tank 1 is not suitable for etching the wafer. So that the Si concentration of the etching solution in the process tank 1 can be accumulated to reach the limit of liquid change.
If the etching solution recycling device provided by the embodiment of the invention is not available, the brand new etching solution can be added after the wafer batch processing equipment is stopped and the etching solution in the process tank 1 is cooled and discharged completelyThe etching solution is reheated to the process temperature, which takes a long time and requires the equipment to be stopped. Moreover, the liquid is changed frequently. For example, in a wafer batch processing facility, a new H3PO4The etching solution is used for one etching process of 50 wafers, and needs to be replaced after being used for 4 times.
In contrast, according to the apparatus for recycling etching solution provided by the embodiment of the present invention, referring to fig. 4, when the Si concentration of the etching solution in the process tank 1 rises to a first concentration (for example, a solution change limit, or slightly less than the solution change limit), the etching solution is discharged into the recycling tank 4. SiO removal is carried out in a recovery tank 42And (c) a treatment for reducing the Si concentration to a second concentration (the second concentration is determined by the filter capacity of the dust removing device 5, and the second concentration is lower than the first concentration, and the embodiment is not particularly limited). In order to continue the etching process for removing the nitride film in the process tank 1, it is necessary to recover the etching solution in the process tank 1 into the recovery process tank 1 and to add a new etching solution or remove SiO2And (5) the treated corrosive liquid.
Specifically, if the liquid change limit is reached for the first time, SiO is not removed yet2And adding new corrosive liquid into the treated corrosive liquid. After that, each time the liquid change limit is reached, the SiO is recovered and removed from the process tank 12The treated corrosive liquid or the corrosive liquid added with the SiO removal2The treated corrosive liquid or a new corrosive liquid. Repeating the process of recycling the corrosive liquid until the corrosive liquid in the process tank 1 can not remove SiO by supplementing2The treated etching solution is reduced to a preset target concentration, and the etching solution in the recovery tank 4 and the process tank 1 is discharged. And finishing the adding of the brand-new corrosive liquid into the process tank 1 at the current time so as to carry out the etching process of the next batch.
Note that SiO is removed2The lower the Si concentration of the treated etching solution, the better, specifically, it is determined based on the treatment ability of the dust removing device 5.
Obviously, by the method for recycling the corrosive liquid, provided by the embodiment of the invention, the liquid change period (Life Count) of the corrosive liquid is prolonged, the number of processed wafers is increased, the corrosive liquid can be continuously used, the liquid change times and time are reduced, the usage amount of HSN is saved, and the equipment productivity is improved.
In the above description, the technical details of patterning, etching, and the like of each layer are not described in detail. It will be appreciated by those skilled in the art that layers, regions, etc. of the desired shape may be formed by various technical means. In addition, in order to form the same structure, those skilled in the art can also design a method which is not exactly the same as the method described above. In addition, although the embodiments are described separately above, this does not mean that the measures in the embodiments cannot be used in advantageous combination.
While preferred embodiments of the present invention have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. Therefore, it is intended that the appended claims be interpreted as including preferred embodiments and all such alterations and modifications as fall within the scope of the invention.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (10)
1. A device for recycling corrosive liquid is characterized by comprising:
a recycling tank connected with the process tank of the wafer batch processing equipment, the recycling tank being used for receiving and storing the corrosive liquid discharged from the process tank and adding the SiO removed corrosive liquid into the process tank2The treated corrosive liquid;
the dust removal device is connected with the recovery tank and is used for removing SiO from the corrosive liquid in the recovery tank2Processing;
the first concentration meter is used for monitoring the Si concentration of the corrosive liquid in the recovery tank;
and the second concentration meter is used for monitoring the Si concentration of the corrosive liquid in the process tank.
2. The apparatus of claim 1, wherein the liquid outlet of the process tank is connected to the liquid inlet of the recovery tank by a liquid discharge pipe, and the liquid inlet of the process tank is connected to the liquid outlet of the recovery tank by a liquid return pipe.
3. The device as claimed in claim 2, wherein the liquid discharge conduit and the liquid return conduit are provided with a first heater and/or a delivery pump.
4. The apparatus of claim 3, wherein the drain line and the return line share a common intermediate line, the first heater and/or the transfer pump being disposed on the intermediate line.
5. The apparatus of claim 4,
a liquid discharge on-off valve is arranged on the liquid discharge pipeline relative to the near-end pipe section of the process tank;
a circulation on-off valve is arranged on the liquid return pipeline relative to the proximal end pipe section of the recovery tank;
and a liquid return on-off valve is arranged on the liquid return pipeline relative to the near-end pipe section of the process tank.
6. The apparatus of claim 1, wherein the dust removal device comprises a plurality of SiO in parallel or in series2And (3) a filter.
7. The apparatus of claim 6, wherein the SiO2The filter is internally provided with a filter structure with the flow rate of 5-50 liters/minute, wherein the material of the filter structure is an oxide film adsorbing silicon.
8. The apparatus of any of claims 1-7, wherein the apparatus further comprises:
and the capacity monitor is arranged in the process tank and used for monitoring that the amount of the corrosive liquid discharged from the process tank line to the recovery tank is 10-80% of the whole capacity of the process tank.
9. A semiconductor processing apparatus, comprising: the wafer batch processing equipment comprises wafer batch processing equipment and an etching solution recycling device connected with a process tank of the wafer batch processing equipment, wherein the etching solution recycling device is as claimed in any one of claims 1 to 8.
10. The method for recycling the etching solution is performed on the basis of the wafer batch processing equipment as claimed in claim 9, and comprises the following steps:
when the concentration of Si of the corrosive liquid in the process tank is monitored to be increased to a first concentration, the corrosive liquid in the process tank is discharged into the recovery tank, and new corrosive liquid is synchronously injected into the process tank or SiO in the recovery tank is removed2The treated corrosive liquid;
in the process of carrying out the etching process of the current batch in the process tank, the SiO is removed by circulating the corrosive liquid in the recovery tank through the dust removal device2Until the Si concentration of the corrosive liquid in the recovery tank is reduced to a second concentration, wherein the second concentration is lower than the first concentration;
when the concentration of Si in the corrosive liquid in the process tank is monitored to rise to the first concentration again, injecting the corrosive liquid into the process tank to remove SiO in the recovery tank2And (5) the treated corrosive liquid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010909301.1A CN114195245A (en) | 2020-09-02 | 2020-09-02 | Device and method for recycling corrosive liquid |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010909301.1A CN114195245A (en) | 2020-09-02 | 2020-09-02 | Device and method for recycling corrosive liquid |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114195245A true CN114195245A (en) | 2022-03-18 |
Family
ID=80644325
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010909301.1A Pending CN114195245A (en) | 2020-09-02 | 2020-09-02 | Device and method for recycling corrosive liquid |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114195245A (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101150066A (en) * | 2006-09-20 | 2008-03-26 | 大日本网目版制造株式会社 | Substrate processing apparatus |
| CN101303976A (en) * | 2006-10-12 | 2008-11-12 | M·Fsi株式会社 | Regeneration method of etching solution, etching method and etching apparatus |
| CN102420127A (en) * | 2011-07-01 | 2012-04-18 | 上海华力微电子有限公司 | Pipeline system and method for improving stability of etching speed selectivity ratio |
| TW201705288A (en) * | 2015-03-31 | 2017-02-01 | 思可林集團股份有限公司 | Substrate processing apparatus and substrate processing method |
| CN107452649A (en) * | 2013-03-29 | 2017-12-08 | 芝浦机械电子株式会社 | Wet-type etching device |
| CN208753278U (en) * | 2018-10-12 | 2019-04-16 | 德淮半导体有限公司 | Wafer etching apparatus |
| CN110610875A (en) * | 2018-06-15 | 2019-12-24 | 东京毅力科创株式会社 | Substrate processing apparatus and method for reusing processing liquid |
-
2020
- 2020-09-02 CN CN202010909301.1A patent/CN114195245A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101150066A (en) * | 2006-09-20 | 2008-03-26 | 大日本网目版制造株式会社 | Substrate processing apparatus |
| CN101303976A (en) * | 2006-10-12 | 2008-11-12 | M·Fsi株式会社 | Regeneration method of etching solution, etching method and etching apparatus |
| CN102420127A (en) * | 2011-07-01 | 2012-04-18 | 上海华力微电子有限公司 | Pipeline system and method for improving stability of etching speed selectivity ratio |
| CN107452649A (en) * | 2013-03-29 | 2017-12-08 | 芝浦机械电子株式会社 | Wet-type etching device |
| TW201705288A (en) * | 2015-03-31 | 2017-02-01 | 思可林集團股份有限公司 | Substrate processing apparatus and substrate processing method |
| CN110610875A (en) * | 2018-06-15 | 2019-12-24 | 东京毅力科创株式会社 | Substrate processing apparatus and method for reusing processing liquid |
| CN208753278U (en) * | 2018-10-12 | 2019-04-16 | 德淮半导体有限公司 | Wafer etching apparatus |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4944558B2 (en) | Etching solution regeneration method, etching method and etching apparatus | |
| US10037901B2 (en) | Substrate liquid treatment apparatus, method of cleaning substrate liquid treatment apparatus and non-transitory storage medium | |
| US20150020968A1 (en) | Substrate processing apparatus and substrate processing method | |
| JP5873020B2 (en) | Recycling method and apparatus for recycling waste water containing slurry from semiconductor processing processes, particularly chemical mechanical polishing processes | |
| US20080099144A1 (en) | Etching system | |
| US20090317980A1 (en) | Filter, substrate treatment apparatus and substrate treatment method | |
| WO2019082661A1 (en) | Substrate treatment device, and cleaning method of substrate treatment device | |
| US20050133066A1 (en) | Substrate treating method and apparatus | |
| CN114195245A (en) | Device and method for recycling corrosive liquid | |
| CN100399518C (en) | Etching system and treatment of etching agent | |
| KR101099576B1 (en) | System for supplying and collecting cleaning solution | |
| CN112349629B (en) | Cleaning tank assembly and semiconductor cleaning equipment | |
| CN104874571A (en) | System for cleaning high-intensity magnetic separator coils | |
| JP2541443B2 (en) | Wet etching apparatus and filter regeneration method | |
| TW201810360A (en) | Semiconductor drying apparatus and circulating and filtering method of drying liquid used for the apparatus | |
| JP3202605B2 (en) | Plant chemical cleaning method and equipment | |
| EP3725393A1 (en) | Filtering membrane cleaning method | |
| TW201946686A (en) | Filtration device and filtration method | |
| JP2006043655A (en) | Water treating apparatus and operation method therefor | |
| KR0174986B1 (en) | Liquid Circulation System of Semiconductor Process | |
| CN115261994B (en) | Wafer corrosion cleaning equipment and process thereof | |
| CN219917083U (en) | Roller cleaning equipment for silicon wafer transmission | |
| JPH04256318A (en) | Chemical treatment device | |
| JPH08167546A (en) | Wet treatment device | |
| CN114388383A (en) | Liquid drainage device and liquid drainage method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |