CN114188435A - Solar cell preparation method and solar cell - Google Patents

Solar cell preparation method and solar cell Download PDF

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CN114188435A
CN114188435A CN202010964001.3A CN202010964001A CN114188435A CN 114188435 A CN114188435 A CN 114188435A CN 202010964001 A CN202010964001 A CN 202010964001A CN 114188435 A CN114188435 A CN 114188435A
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layer
passivation
silicon substrate
borosilicate glass
passivation layer
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CN114188435B (en
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李家栋
刘勇
朴松源
王洪喆
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Das Solar Co Ltd
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Das Solar Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention provides a solar cell and a preparation method thereof, and belongs to the technical field of photovoltaics. According to the preparation method of the solar cell, the borosilicate glass layer with the preset thickness is reserved in the process of preparing the solar cell, the borosilicate glass layer reacts at the preset activation temperature for the preset activation time so as to activate the passivation activity of the borosilicate glass layer, and the first passivation layer of the emitter is obtained.

Description

Solar cell preparation method and solar cell
Technical Field
The invention relates to the technical field of photovoltaics, in particular to a solar cell and a preparation method thereof.
Background
The TOPCON (Tunnel Oxide passivation Contacts) cell is a high-efficiency solar cell, and the conversion efficiency of the solar cell is effectively improved by adopting a passivation contact technology on the back surface of the cell.
At present, the conventional N-type TOPCON cell adopts an alumina/silica film or other optical films to passivate a P-type region, a field effect is formed in the P-type region through a field passivation effect and a negative charge effect of alumina, an electric field barrier is formed by the alumina under the field passivation effect, and interface-state fixed charges are formed in a carrier concentration gradient, so that the passivation capability is improved.
However, in the process of preparing the TOPCON cell, a preparation process of alumina is additionally introduced, so that the process is complicated; in addition, the aluminum oxide is unstable and is easy to be polluted by air, so that the passivation capability is influenced, and therefore, other optical films need to be prepared in a short time to protect the aluminum oxide, so that the process is complicated and the difficulty is high; finally, the surface of the silicon wafer needs to be effectively cleaned before the preparation of the aluminum oxide, and an efficient cleaning method introduced into a semiconductor, such as RCA standard cleaning (initiated by Kern and Puotinen et al in RCA laboratories in 1965), is usually required to effectively exert the passivation capability, so that the process is complicated and the efficiency is low.
In conclusion, the problems of complex preparation process, high preparation difficulty and low efficiency exist when aluminum oxide is used for passivating the P-type region of the N-type TOPCON battery.
Disclosure of Invention
The invention provides a solar cell preparation method and a solar cell, and aims to solve the problems that in the prior art, the preparation process is complex, the preparation difficulty is high and the efficiency is low when a P-type region of the solar cell is passivated.
In a first aspect, a method for manufacturing a solar cell is provided, where the method includes:
performing boron diffusion treatment on the front side of a silicon substrate to form an emitter and a borosilicate glass layer which are sequentially stacked, wherein the silicon substrate has a textured structure;
carrying out partial removal treatment on the borosilicate glass layer, and reserving the borosilicate glass layer with a preset thickness;
reacting the borosilicate glass layer with the preset thickness at a preset activation temperature for a preset activation time to form a first passivation layer;
forming a passivation contact structure on the back side of the silicon substrate;
and sequentially preparing a passivation structure and an electrode structure on one side of the passivation contact structure and one side of the first passivation layer far away from the silicon substrate respectively to form the solar cell.
Optionally, the preset thickness is 10nm to 30 nm.
Optionally, the preset activation temperature is 700 ℃ to 800 ℃.
Optionally, the preset activation time is 20 seconds.
Optionally, the passivation contact structure includes a tunneling oxide layer and a phosphorus-doped dielectric layer, and forming a passivation contact structure on the back surface of the silicon substrate includes:
forming a tunneling oxide layer and a polysilicon layer which are sequentially stacked on the back surface of the silicon substrate;
and carrying out phosphorus doping treatment on the polycrystalline silicon layer to form a phosphorus-doped dielectric layer.
Optionally, before the step of performing partial removal processing on the borosilicate glass layer and retaining the predetermined thickness of the borosilicate glass layer to form the first passivation layer, the method further includes:
removing the polysilicon winding plating layer wound and plated to the front surface in the process of forming the polysilicon layer;
and removing the phosphorosilicate glass layer wound and plated to the front surface in the phosphorus doping treatment process.
Optionally, the passivation structure includes a second passivation layer and a third passivation layer, the electrode structure includes a first electrode structure and a second electrode structure, and the passivation structure and the electrode structure are sequentially prepared on the side of the passivation contact structure and the side of the first passivation layer away from the silicon substrate, respectively, including:
forming a second passivation layer on one side of the passivation contact structure far away from the silicon substrate;
forming a first electrode structure on one side of the second passivation layer far away from the silicon substrate;
forming a third passivation layer on one side of the first passivation layer far away from the silicon substrate;
and forming a second electrode structure on one side of the third passivation layer far away from the silicon substrate.
Optionally, the second passivation layer and the third passivation layer are silicon nitride heterogeneous film layers.
In a second aspect, a solar cell is provided, which is prepared by the method of the first aspect.
Compared with the related art, the invention has the following advantages:
in the embodiment of the invention, the borosilicate glass layer with the preset thickness is reserved in the process of preparing the solar cell, and reacts at the preset activation temperature for the preset activation time to activate the passivation activity of the borosilicate glass layer, so that the first passivation layer of the emitter is obtained.
The foregoing description is only an overview of the technical solutions of the present invention, and the embodiments of the present invention are described below in order to make the technical means of the present invention more clearly understood and to make the above and other objects, features, and advantages of the present invention more clearly understandable.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. Also, like reference numerals are used to refer to like parts throughout the drawings. In the drawings:
FIG. 1 is a flow chart illustrating steps of a method for fabricating a solar cell according to the present invention;
fig. 2 is a flow chart illustrating steps of another method for manufacturing a solar cell according to the present invention.
Detailed Description
Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
Fig. 1 is a flowchart illustrating steps of a method for manufacturing a solar cell according to an embodiment of the present invention, where the method may include:
step 101, performing boron diffusion treatment on the front side of a silicon substrate to form an emitter electrode and a borosilicate glass layer which are sequentially stacked, wherein the silicon substrate has a textured structure.
In the embodiment of the invention, the solar cell is a TOPCON cell, and generally the preparation route of the TOPCPN cell is to perform texturing treatment on a P-type region to form a boron emitter, perform aluminum oxide passivation, form a silicon nitride, silicon oxynitride or other heterogeneous film layers, and print a metal electrode to form a TOPCON front structure; and polishing or texturing the N-type region, doping poly (polycrystalline) silicon, passivating silicon nitride, and printing a metal electrode to form a TOPCON back structure. However, an additional preparation process is introduced for passivating the boron emitter by using aluminum oxide, and aluminum oxide is unstable and easily polluted by air, needs to be protected by preparing other optical films in a short time, and needs to effectively clean the surface of a silicon wafer, so that the problems of complex preparation process, high preparation difficulty and low efficiency are caused.
In the embodiment of the invention, in the preparation process of the TOPCON battery, boron diffusion treatment is firstly carried out on a silicon substrate to form an emitter and a borosilicate glass layer which are sequentially stacked, wherein the front surface of the silicon substrate is of a textured structure, and can be field surface texturing treatment or a silicon substrate with a textured structure prepared in advance, in addition, a liquid boron source or a solid boron source can be adopted for phosphorus diffusion treatment, boron atoms can be firstly deposited on the surface of the silicon substrate in the boron diffusion process, and then propulsion and oxidation are carried out, so that the emitter and the borosilicate glass layer are sequentially formed on the front surface of the silicon substrate from inside to outside. Alternatively, the boron diffusion treatment may be implemented by a furnace tube thermal diffusion process, or may be implemented by a spin coating process, which is not particularly limited in this embodiment of the present invention.
And 102, performing partial removal treatment on the borosilicate glass layer, and reserving the borosilicate glass layer with a preset thickness.
In the embodiment of the invention, partial removal treatment can be carried out on the outer borosilicate glass layer formed in boron diffusion, so that the borosilicate glass layer with the preset thickness is reserved for passivating the boron emitter, and optionally, the reserved thickness can be controlled to be the preset thickness by controlling the cleaning time when the borosilicate glass layer is removed, wherein the borosilicate glass layer has certain hydrophilicity, so that the existence of the borosilicate glass layer can be qualitatively judged by a hydrophilicity test.
In the embodiment of the invention, a relation model of the borosilicate glass layer degree and the minority carrier lifetime of the silicon substrate can be constructed in advance, so that the preset thickness of the borosilicate glass layer can be determined according to the model, for example, a high resistivity silicon wafer with the size of 158.75mm multiplied by 158.75mm and the resistivity of 5-30 omega cm can be selected, double-sided boron diffusion is carried out after texturing, partial borosilicate glass layer is removed by hydrofluoric acid, then residual acid is removed by water washing (the volume composition is 80-150L of hot water, 150L of normal temperature water, 230L of hydrofluoric acid, 1L-5L of hydrofluoric acid, wherein the temperature of the hot water can be 40-80 ℃, the temperature of the normal temperature water can be 20 ℃), the borosilicate glass layers with different preset thicknesses of M1, M2 and M3 are obtained by respectively adopting the cleaning time of the hydrofluoric acid of T1, T2 and T3, then silicon nitride or other symmetrical optical films are respectively manufactured on two sides, for example, a first silicon nitride layer is firstly prepared on two sides, the thickness of the silicon wafer is 10-30 nm, the refractive index of the silicon wafer is 2.1-2.3, a second silicon nitride layer is prepared on two sides, the thickness of the silicon nitride layer is 30-50 nm, the refractive index of the silicon wafer is 2.05-2.15, a silicon oxide layer is prepared on two sides, the thickness of the silicon oxide layer is 35-55nm, the silicon wafer is sintered after the sintering is completed, the minority carrier lifetime T of the silicon wafer with different preset thicknesses M1, M2 and M3 is tested, namely the time from generation to disappearance of minority carriers in the silicon wafer is tested, the cleaning time T1, T2 and T3 and the corresponding preset thicknesses M1, M2 and M3 are used as a reference, the cleaning time is gradually reduced in a gradient mode, and therefore a group with the highest minority carrier lifetime is determined and used as a borosilicate glass layer to determine the reserved preset thickness.
And 103, reacting the borosilicate glass layer with the preset thickness at a preset activation temperature for a preset activation time to form a first passivation layer.
In the embodiment of the invention, the borosilicate glass layer with the preset thickness can react for the preset activation time at the preset activation temperature, and the borosilicate glass layer with the preset thickness breaks unstable boron-hydrogen bonds in advance in a high-temperature environment when being sintered at the preset activation temperature, so that the hydrogen passivation capability is improved. In addition, the borosilicate glass layer is in a coexisting state of boron atoms and silicon oxide, is a doped dielectric layer, has conductive activity, and can improve the contact capacity of the silicon substrate and the metal electrode, so that a good passivation structure can be formed.
And 104, forming a passivation contact structure on the back surface of the silicon substrate.
In the embodiment of the invention, based on the characteristics of the TOPCON cell, a passivation contact structure may be formed on the back surface of the silicon substrate, or alternatively, a tunneling structure may be formed on the back surface of the silicon substrate, then poly silicon is deposited, and then phosphorus doping is performed on the poly silicon to form a phosphorus-doped dielectric layer, so as to form a passivation contact structure on the back surface of the silicon substrate.
And 105, respectively preparing a passivation structure and an electrode structure on the passivation contact structure and one side of the first passivation layer far away from the silicon substrate in sequence to form the solar cell.
In the embodiment of the invention, based on the characteristics of the TOPCON cell, on the basis of the step 105, the passivation contact structure and the side of the first passivation layer away from the silicon substrate may be sequentially prepared with the passivation structure and the electrode structure, respectively, so as to form the solar cell.
In the embodiment of the present invention, the execution sequence of each process step in step 101 and step 105 may be adjusted according to requirements, which is not particularly limited in the embodiment of the present invention.
In summary, in the embodiment of the invention, in the process of preparing the solar cell, the borosilicate glass layer with the preset thickness is reserved, and reacts at the preset activation temperature for the preset activation time to activate the passivation activity of the borosilicate glass layer, so as to obtain the first passivation layer of the emitter.
Fig. 2 is a flowchart illustrating steps of another method for manufacturing a solar cell according to an embodiment of the present invention, where as shown in fig. 2, the method may include:
step 201, performing boron diffusion treatment on the front side of a silicon substrate to form an emitter and a borosilicate glass layer which are sequentially stacked, wherein the silicon substrate has a textured structure.
In the embodiment of the present invention, step 201 may correspond to the related description referring to step 101, and is not described herein again to avoid repetition. Alternatively, the sheet resistance of the silicon substrate can be controlled to be 70 Ω/□ -120 Ω/□.
Step 202, performing partial removal treatment on the borosilicate glass layer, and reserving the borosilicate glass layer with a preset thickness.
In the embodiment of the present invention, step 202 may correspond to the related description referring to step 102, and is not repeated herein to avoid repetition.
Optionally, the preset thickness is 10nm to 30 nm.
In the embodiment of the present invention, after performing partial removal treatment on the borosilicate glass layer according to a test, the remaining preset thickness may be 10nm to 30nm, and optionally, the preset thickness may be any value between 10nm and 30nm, such as 10nm, 15nm, 20nm, 30nm, and the like, which is not limited in particular in the embodiment of the present invention.
In the embodiment of the invention, the borosilicate glass layer can be partially removed by hydrofluoric acid, optionally, the concentration of the hydrofluoric acid can be 40-50%, after the borosilicate glass layer is partially removed by 1-5 liters of hydrofluoric acid, the borosilicate glass layer is washed by 80-150 liters of hot water and 120-230 liters of normal temperature water, slowly pulled at 20-50 ℃ and dried at 60-90 ℃.
And 203, forming a tunneling oxide layer and a polysilicon layer which are sequentially stacked on the back surface of the silicon substrate.
In the embodiment of the invention, polishing treatment can be carried out on the back surface of the silicon substrate to provide good appearance for depositing the polycrystalline silicon layer, and the weight of the polished silicon substrate can be reduced by 0.1-0.25 g. Forming a tunneling oxide layer on the back surface of the polished silicon substrate, and depositing a polysilicon layer, wherein the tunneling oxide layer can be a silicon oxide layer with the thickness of 1-2 nm, and the polysilicon layer can be 100-300 nm.
And 204, carrying out phosphorus doping treatment on the polycrystalline silicon layer to form a phosphorus-doped dielectric layer.
In the embodiment of the invention, phosphorus doping treatment can be performed on the polycrystalline silicon layer, optionally, phosphorus atoms can be diffused on the polycrystalline silicon layer by adopting a thermal diffusion method, so that a phosphorus-doped dielectric layer is formed, optionally, the sheet resistance of the phosphorus-doped dielectric layer can be 30 omegaAny value between/□ and 90 omega/□ inclusive, the surface concentration may be 3X 1020～1×1021Any numerical value between inclusive.
Optionally, before the step 202, the method further includes:
in the embodiment of the invention, before the partial removal treatment is carried out on the borosilicate glass layer, according to different sequences of process steps, when the process step executed on the back surface possibly exists on the front surface of the silicon substrate, the functional layer is wound and plated to the front surface, and at the moment, the winding and plating on the front surface can be removed firstly, and then the partial removal treatment is carried out on the borosilicate glass layer.
And step S11, removing the polysilicon layer which is plated around to the front surface in the process of forming the polysilicon layer.
In the embodiment of the invention, when the polycrystalline silicon layer is deposited on the back surface of the silicon substrate, the polycrystalline silicon layer is wound and plated on the front surface of the silicon substrate to form the polycrystalline silicon winding and plating layer, and at the moment, the polycrystalline silicon winding and plating layer wound and plated on the front surface has the phenomenon of front surface light absorption, so that the short circuit current of the solar cell is influenced, and the cell efficiency is reduced, therefore, the polycrystalline silicon winding and plating layer wound and plated on the front surface of the silicon substrate can be realized. Optionally, the polysilicon wraparound layer can be removed by means of alkali cleaning, wherein the concentration of the alkali liquor can be any value between 30% and 50% in mass fraction, such as 30%, 35%, 40%, 50% and the like.
In the embodiment of the invention, when the polycrystalline silicon spiral coating is removed, the concentration of alkali liquor, the cleaning time and the like can be selected according to the thickness of the polycrystalline silicon spiral coating, the process efficiency requirement and the like, optionally, 10 liters to 30 liters of alkali liquor and 200 liters to 400 liters of water are mixed, and the polycrystalline silicon spiral coating on the silicon substrate is cleaned for 100 seconds to 300 seconds to remove the polycrystalline silicon spiral coating.
And step S12, removing the phosphorosilicate glass layer which is plated to the front side in the phosphorus doping treatment process.
In the embodiment of the invention, when the polysilicon layer is subjected to phosphorus doping treatment in step 204, a plating-around phenomenon occurs, so that a phosphosilicate glass layer exists on the front surface of the silicon substrate, the phosphosilicate glass layer is formed by plating an oxide formed when a phosphorus-doped dielectric layer is prepared by phosphorus doping on the front surface in a plating-around manner, and the phosphosilicate glass layer slowly reacts with alkali to influence the removal of the polysilicon plating-around layer, so that the phosphosilicate glass layer can be removed before the polysilicon plating-around layer is removed. Alternatively, a chain HF (hydrogen fluoride) etch may be used to remove the phosphosilicate glass layer.
And 205, reacting the borosilicate glass layer with the preset thickness at a preset activation temperature for a preset activation time to form a first passivation layer.
In the embodiment of the present invention, step 205 may refer to the related description of step 103, and is not repeated herein to avoid repetition.
Optionally, the preset activation temperature is 700 ℃ to 800 ℃.
Optionally, the preset activation time is 20 seconds.
In the embodiment of the present invention, the preset activation temperature of the borosilicate glass layer may be any value between 700 ℃ and 800 ℃, optionally 700 ℃, 720 ℃, 740 ℃, 760 ℃, 780 ℃, 785 ℃, 800 ℃ and the like, the preset activation time may be adjusted according to the preset activation temperature and the preset thickness of the borosilicate glass layer, optionally, the preset activation time may be 20 seconds, and a person skilled in the art may adjust the preset activation time according to specific process conditions and application requirements, which is not specifically limited in the embodiment of the present invention.
And 206, forming a second passivation layer on one side of the passivation contact structure far away from the silicon substrate.
And step 207, forming a first electrode structure on one side of the second passivation layer far away from the silicon substrate.
And 208, forming a third passivation layer on one side of the first passivation layer far away from the silicon substrate.
And 209, forming a second electrode structure on one side of the third passivation layer far away from the silicon substrate.
In the embodiment of the present invention, a third passivation layer may be formed on a side of the passivation contact structure away from the silicon substrate and a side of the first passivation layer away from the silicon substrate to form a second passivation layer and a third passivation layer, respectively, so as to protect an internal structure of the solar cell.
Optionally, the second passivation layer and the third passivation layer are silicon nitride heterogeneous film layers.
In the embodiment of the invention, the second passivation layer and the third passivation layer may be silicon nitride heterogeneous film layers, optionally, the thickness of the second passivation layer may be 70 nm to 100 nm, and at this time, the refractive index may be 2.05 to 2.15; the thickness of the third passivation layer may be 60 nm to 80 nm, and at this time, the refractive index may be 1.95 to 2.15.
In the embodiment of the present invention, the first electrode structure and the second electrode structure may be formed by screen printing metal electrodes on the surfaces of the second passivation layer and the third passivation layer, respectively, and optionally, the solar cell electrode paste forming the electrode structures may be a paste formed by mixing metal powder with a glass binder and suspending the metal powder in an organic liquid or a carrier, wherein the metal powder may be aluminum, silver, or the like. Alternatively, the fine grid of the second passivation layer may adopt polymer NR (Natural Rubber) paste, the main grid may adopt silver paste, and the main grid and the fine grid of the third passivation layer may both adopt silver paste, and then the first electrode structure and the second electrode structure are manufactured by drying, sintering, and the like, so as to obtain the solar cell.
In the embodiment of the invention, the borosilicate glass layer with the preset thickness is reserved in the process of preparing the solar cell, and reacts at the preset activation temperature for the preset activation time to activate the passivation activity of the borosilicate glass layer, so that the first passivation layer of the emitter is obtained.
The embodiment of the invention also provides a solar cell, and the solar cell is prepared by the method shown in the figure 1 and the figure 2.
It can be clearly understood by those skilled in the art that, for convenience and brevity of description, the specific working processes of the above-described apparatuses and modules may refer to the corresponding processes in the foregoing method embodiments, and are not described herein again.
Other embodiments of the invention will be apparent to those skilled in the art from consideration of the specification and practice of the invention disclosed herein. This application is intended to cover any variations, uses, or adaptations of the invention following, in general, the principles of the invention and including such departures from the present disclosure as come within known or customary practice within the art to which the invention pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the invention being indicated by the following claims.
It will be understood that the invention is not limited to the precise arrangements described above and shown in the drawings and that various modifications and changes may be made without departing from the scope thereof. The scope of the invention is limited only by the appended claims.

Claims (9)

1. A method of fabricating a solar cell, the method comprising:
performing boron diffusion treatment on the front side of a silicon substrate to form an emitter and a borosilicate glass layer which are sequentially stacked, wherein the silicon substrate has a textured structure;
carrying out partial removal treatment on the borosilicate glass layer, and reserving the borosilicate glass layer with a preset thickness;
reacting the borosilicate glass layer with the preset thickness at a preset activation temperature for a preset activation time to form a first passivation layer;
forming a passivation contact structure on the back side of the silicon substrate;
and sequentially preparing a passivation structure and an electrode structure on one side of the passivation contact structure and one side of the first passivation layer far away from the silicon substrate respectively to form the solar cell.
2. The method according to claim 1, wherein the predetermined thickness is 10nm to 30 nm.
3. The method according to claim 1, wherein the predetermined activation temperature is 700 ℃ to 800 ℃.
4. The method of claim 1, wherein the preset activation time is 20 seconds.
5. The method of claim 1, wherein the passivation contact structure comprises a tunnel oxide layer and a phosphorus-doped dielectric layer, and wherein forming a passivation contact structure on the back side of the silicon substrate comprises:
forming a tunneling oxide layer and a polysilicon layer which are sequentially stacked on the back surface of the silicon substrate;
and carrying out phosphorus doping treatment on the polycrystalline silicon layer to form a phosphorus-doped dielectric layer.
6. The method according to claim 1, wherein before the partially removing the borosilicate glass layer and leaving the borosilicate glass layer with a predetermined thickness to form the first passivation layer, the method further comprises:
removing the polysilicon winding plating layer wound and plated to the front surface in the process of forming the polysilicon layer;
and removing the phosphorosilicate glass layer wound and plated to the front surface in the phosphorus doping treatment process.
7. The method of claim 1, wherein the passivation structure comprises a second passivation layer and a third passivation layer, the electrode structure comprises a first electrode structure and a second electrode structure, and the sequentially preparing the passivation structure and the electrode structure on the passivation contact structure and the side of the first passivation layer away from the silicon substrate respectively comprises:
forming a second passivation layer on one side of the passivation contact structure far away from the silicon substrate;
forming a first electrode structure on one side of the second passivation layer far away from the silicon substrate;
forming a third passivation layer on one side of the first passivation layer far away from the silicon substrate;
and forming a second electrode structure on one side of the third passivation layer far away from the silicon substrate.
8. The method of claim 7, wherein the second passivation layer and the third passivation layer are silicon nitride heterogeneous film layers.
9. A solar cell, characterized in that it is prepared by the method of claims 1-8.
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