CN114178683A - Method for efficiently processing heterogeneous material by composite laser - Google Patents

Method for efficiently processing heterogeneous material by composite laser Download PDF

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CN114178683A
CN114178683A CN202111454586.5A CN202111454586A CN114178683A CN 114178683 A CN114178683 A CN 114178683A CN 202111454586 A CN202111454586 A CN 202111454586A CN 114178683 A CN114178683 A CN 114178683A
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laser
irradiation
phase
light wavelength
processing
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CN114178683B (en
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郭馨
朱星宏
陈康杰
沈立炜
张航
申胜平
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Xian Jiaotong University
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Xian Jiaotong University
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • B23K26/3568—Modifying rugosity
    • B23K26/3576—Diminishing rugosity, e.g. grinding; Polishing; Smoothing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material

Abstract

The invention discloses a method for efficiently processing a heterogeneous material by composite laser, which adopts multi-wavelength laser with photothermal and photochemical effects, and realizes high-speed processing of the heterogeneous material by adopting laser irradiation with specific parameters and combining real-time monitoring of spectral parameters and laser parameter regulation and control. The method solves the problems that the laser processing heterogeneous material is easy to damage the low threshold phase or part, the optimization parameter matching of each phase or each part aiming at specific processing is difficult to realize, the processing effect is difficult to regulate and control in real time, and the processing process is difficult to carry out at high speed.

Description

Method for efficiently processing heterogeneous material by composite laser
Technical Field
The invention relates to the technical field of laser processing, in particular to a method for efficiently processing a heterogeneous material by composite laser.
Background
The laser processing technology is characterized in that the energy of light is focused by a lens and then can reach high energy density near a focus, the material is processed by virtue of photo-thermal or photochemical effects, and the laser processing technology becomes an important advanced material processing method because the laser processing technology does not need to contact the material, has small surface deformation and is suitable for various materials.
Laser machining can be broadly classified into laser thermal machining and photochemical reaction machining according to the mechanism of interaction between a laser beam and a material. Laser thermal processing refers to a processing process which is completed by utilizing a thermal effect generated by projecting a laser beam on the surface of a material, and photochemical reaction processing refers to a processing process in which the laser beam irradiates an object and the photochemical reaction is initiated or controlled by high energy of high-density laser. Due to the limitation of a laser excitation principle on a laser, most of the existing laser irradiation based on a thermal effect is high in speed, but a caused thermal effect area is large, so that the original micro-nano structure of a material cannot be reserved; the laser based on photochemistry needs to adopt a short wavelength or short pulse mode, has high precision and small thermal effect, but has low irradiation efficiency. Meanwhile, no matter which action mode is adopted, the laser has great limitation in processing heterogeneous materials, and each phase or each area of the heterogeneous materials has difference in response to the absorption rate and the like of the laser, so that the quality consistency of laser processing is seriously influenced; in addition, the heterogeneous materials have different melting points and other physical and chemical properties, so that the physical and chemical states of each phase or each part are different under the same energy density irradiation condition, and most of the heterogeneous materials are difficult to simultaneously meet the processing threshold of all the phases or parts without causing other changes during processing.
Therefore, laser processing of heterogeneous materials currently has the following problems: (1) it is difficult to ensure high processing efficiency; (2) the part with a lower threshold value in the heterogeneous material is easily influenced, and transitional ablation is caused or the original special micro-nano structure is damaged; (3) the parameter range used for processing is the comprehensive result of the parameters of all phases or all parts, but not the optimal parameter range for realizing specific processing of all phases or all parts, so that the overall processing quality is poor; (4) the processing effect cannot be regulated and controlled in real time.
Disclosure of Invention
In order to overcome the above-mentioned technical problems, the present invention aims to provide a method for efficiently processing a heterogeneous material by using a composite laser, which uses a multi-wavelength laser with photothermal and photochemical effects, and realizes high-speed processing of the heterogeneous material by using laser irradiation with specific parameters and combining real-time monitoring of spectral parameters and laser parameter regulation and control. The method solves the problems that the laser processing heterogeneous material is easy to damage the low threshold phase or part, the optimization parameter matching of each phase or each part aiming at specific processing is difficult to realize, the processing effect is difficult to regulate and control in real time, and the processing process is difficult to carry out at high speed.
In order to achieve the purpose, the invention adopts the following technical scheme:
a method for efficiently processing a heterogeneous material by composite laser comprises the following specific steps:
(1) determining the phase P of the most abundant heterogeneous material to be processedMPhase P with highest lasing thresholdFMPhase P with lowest lasing thresholdFm；
(2) According to the most abundant phase PMPhase P with highest lasing thresholdFMPhase P with lowest lasing thresholdFmThe absorption rate of ultraviolet light-infrared light is selected, and an ultraviolet light wavelength L1 with the highest relative absorption rate and an infrared light wavelength L2 with the highest relative absorption rate are selected;
(3) determination of the most abundant phase PMRespectively corresponding to ultraviolet light wavelength L1 and infrared light wavelength L2 at different irradiation densities, such as phase P with the highest contentMDamage threshold value F ofth(PM)、1.5*Fth(PM)、2*Fth(PM) Depth of irradiation D at constantMWidth of irradiation BMWidth E of the region affected by irradiationMUntil reaching a certain multiple a, using a damage threshold (a +0.5) × Fth(PM) Depth of action of applied radiation DMWidth of irradiation BMWidth E of the region affected by irradiationMThe processing requirements are not met, and the phase P with the maximum content of the processing heterogeneous material with the ultraviolet light wavelength L1 and the infrared light wavelength L2 is obtainedMRespective highest laser irradiation density a 1Fth(PM，L1)、a2*Fth(PM，L2)；
(4) Determining the phase P with the highest lasing thresholdFMCorresponding to the ultraviolet light wavelength L1 and the infrared light wavelength L2 in different irradiation densities, such as the phase P with the highest laser action thresholdFMDamage threshold value F ofth(PFM)、1.5*Fth(PFM)、 2*Fth(PFM) Depth of irradiation D under the likeFMWidth of irradiation BFMWidth E of the region affected by irradiationFMUntil a certain multiple b is reached, a damage threshold value (b +0.5) F is adoptedth(PFM) Depth of action of applied radiation DFMWidth of irradiation BFMWidth E of the region affected by irradiationFMThe processing requirements are not met, and the phase P with the highest laser action threshold of the heterogeneous material processed by the ultraviolet light wavelength L1 and the infrared light wavelength L2 is obtainedFMRespective highest laser irradiation density b 1Fth(PFM，L1)，b2*Fth(PFM，L2)；
(5) Determining the phase P with the lowest lasing thresholdFmCorresponding to the ultraviolet light wavelength L1 and the infrared light wavelength L2 in different irradiation densities, such as the phase P with the lowest laser action thresholdFmDamage threshold value F ofth(PFm)、1.5*Fth(PFm)、 2*Fth(PFm) Depth of irradiation D under the likeFmWidth of irradiation BFmWidth E of the region affected by irradiationFmUntil reaching a certain multiple c, a damage threshold (c +0.5) × F is usedthDepth of action of applied radiation DFmWidth of irradiation BFmWidth E of the region affected by irradiationFmThe processing requirements are not met, and the phase P with the lowest laser action threshold of the heterogeneous material processed by the ultraviolet light wavelength L1 and the infrared light wavelength L2 is obtainedFmRespective highest laser irradiation density c 1Fth(PFm，L1)、c2*Fth(PFm，L2)；
(6) When the most abundant phase P is present in the heterogeneous material to be processedMPhase P with lowest lasing thresholdFmWhen the laser with the infrared wavelength L2 is used directly,using c 2Fth(PFmL2) laser irradiation density to process the heterogeneous material to be processed, and realizing the phase P with the lowest laser action threshold in the processing areaFmMonitoring the peak position and the peak value of the laser induced spectrum in real time by adopting a spectrum device, and entering the step (7); when the maximum content of phase P in the heterogeneous material to be processed is reachedMPhase P not having the lowest lasing thresholdFmThen, entering the step (11);
(7) when the peak position of the monitored laser-induced spectrum changes or the peak value is reduced by 10% or more, recording the position corresponding to the change; using the wavelength L2 of infrared light and the laser irradiation density c 2Fth(PFmL2) irradiating the heterogeneous material with the laser beam until all surfaces to be processed have been processed;
(8) calculating the recorded position, calculating the average width K of the recorded position, and finding out the laser irradiation density x F under the action of the corresponding ultraviolet light wavelength L1th(PFML1), irradiation width D under the action of the laser irradiation densityMWidth E of region affected by irradiationMWhen the sum is close to and not higher than the average width K, processing an area with the recording position size larger than K, and monitoring the peak position and the peak value of the laser-induced spectrum in real time by adopting a spectrum device;
(9) when the peak position of the monitored laser induced spectrum changes, or the peak value changes by 10% or more, recording the position corresponding to the change; using ultraviolet light wavelength L1 and laser irradiation density x Fth(PFML1) until all recorded surfaces have been machined;
(10) adopting ultraviolet light wavelength L1 and laser irradiation density Fth(PFML1), setting the light spot to the minimum state with a diaphragm, and implementing the minimum light spot scanning processing on the recording position until the change of the laser-induced spectrum peak value no longer occurs;
(11) when the most abundant phase P is present in the heterogeneous material to be processedMPhase P with highest lasing thresholdFMComparison c 2Fth(PFm，L2) And Fth(PFML2), if c 2Fth(PFm，L2)>Fth(PML2), using the infrared light wavelength L2, laser irradiation density c2 x Fth(PFmL2) processing the heterogeneous material to be processed, monitoring the peak position and peak value of the laser induced spectrum in real time by adopting a spectrum device, and entering the step (12); if c 2Fth(PFm，L2)<Fth(PFML2), go to step (15); when the maximum content of phase P in the heterogeneous material to be processed is reachedMNot of the phase P with the highest lasing thresholdFMThen, entering the step (20);
(12) when the peak position of the monitored laser-induced spectrum changes or the peak value is reduced by 10% or more, recording the position corresponding to the change; using the wavelength L2 of infrared light and the laser irradiation density c 2Fth(PFmL2) irradiating the heterogeneous material with the laser beam until all surfaces to be processed have been processed;
(13) the recorded position is calculated by using the wavelength L2 of infrared light and the irradiation density F of laserth(PFML2) processing the recorded area; using the wavelength L2 of infrared light and the laser irradiation density Fth(PFML2), until all surfaces to be processed have been processed, monitoring the peak position and peak value of its laser-induced spectrum in real time by using a spectroscopic device;
(14) when the peak position of the monitored laser induced spectrum changes, or the peak value changes by 10% or more, recording the position corresponding to the change; using ultraviolet light wavelength L1 and laser irradiation density a 1Fth(PFML1) until no change in the peak value of the laser-induced spectrum occurs;
(15) if c 2Fth(PFm，L2)<Fth(PFML2), using uv light wavelength L1, laser irradiation density c1 x Fth(PFmL1) processing the heterogeneous material to be processed, and monitoring the peak position and peak value of the laser-induced spectrum in real time by using a spectrum device;
(16) when in useMonitoring the peak position change of the laser induced spectrum, or reducing the peak value by 10% or more, and recording the position corresponding to the change; using ultraviolet light wavelength L1 and laser irradiation density c 1Fth(PFmL1) irradiating the heterogeneous material with laser light until all surfaces to be machined have been machined;
(17) calculating the recorded position, calculating the average width K of the recorded position, and finding out the laser irradiation density y x F under the action of the corresponding ultraviolet light wavelength L1th(PFML1), irradiation width D under the action of the laser irradiation densityMWidth E of region affected by irradiationMWhen the sum is close to and not higher than the average width K, processing an area with the recording position size larger than K, and monitoring the peak position and the peak value of the laser-induced spectrum in real time by adopting a spectrum device;
(18) when the peak position of the monitored laser induced spectrum changes, or the peak value changes by 10% or more, recording the position corresponding to the change; using ultraviolet wavelength L1 and laser irradiation density y Fth(PFML1) until all recorded surfaces have been machined;
(19) adopting ultraviolet light wavelength L1 and laser irradiation density Fth(PFML1) the processing of the recording position is effected until no change in the peak value of the laser-induced spectrum occurs anymore;
(20) when the most abundant phase P is present in the heterogeneous material to be processedMNot of the phase P with the highest lasing thresholdFMOr not the phase P with the lowest lasing thresholdFmSelecting the wavelength L2 of infrared light and the laser irradiation density c 2Fth(PFmL2) nearest x Fth(PML2) processing the heterogeneous material to be processed, and monitoring the peak position and peak value of the laser induced spectrum in real time by using a spectrum device;
(21) when the peak position of the monitored laser-induced spectrum changes or the peak value is reduced by 10% or more, recording the position corresponding to the change; using the wavelength L2 of infrared light and the laser irradiation density x Fth(PML2) parameters of the laser on heterogeneous materialsIrradiating until all surfaces needing to be processed are processed;
(22) calculating the recorded position, calculating the average width K of the recorded position, and finding out the laser irradiation density z x F under the action of the corresponding ultraviolet light wavelength L1th(PML1), irradiation width D under the action of the laser irradiation densityMWidth E of region affected by irradiationMWhen the sum is close to and not higher than the average width K, processing an area with the recording position size larger than K, and monitoring the peak position and the peak value of the laser-induced spectrum in real time by adopting a spectrum device;
(23) when the peak position of the monitored laser induced spectrum changes, or the peak value changes by 10% or more, recording the position corresponding to the change; using ultraviolet light wavelength L1 and laser irradiation density z x Fth(PML1) until all recorded surfaces have been machined;
(24) adopting ultraviolet light wavelength L1 and laser irradiation density Fth(PFML1), with the diaphragm setting the spot to the minimum state, minimum spot scanning processing for the recording position is realized until no change in the laser-induced spectral peak value occurs anymore.
Compared with the prior art, the invention has the following beneficial effects:
(1) the laser processing method has the advantages that the multi-wavelength laser with photo-thermal and photochemical effects is adopted as the laser source, laser parameters suitable for processing various heterogeneous materials including ceramics, metals, composite materials, porous materials, organic matters and the like can be reasonably matched, the advantages of high-speed repetition frequency of thermal effect laser megahertz or continuous irradiation and the advantages of high-resolution and low-influence area of photochemical effect laser are fully utilized, and the laser processing method can be suitable for various processing requirements such as punching, cutting, polishing and the like;
(2) by adopting laser irradiation with specific parameters and performing differentiated classification and removal on the parameters of each phase or each part, the optimized parameter setting of each phase or each part can be realized, the loss of low-melting-point, volatile and other low-laser irradiation damage threshold substances in the processing process is reduced, and the high-quality processing quality is ensured;
(3) the consumption condition of a processed phase or part of the processing process is monitored through real-time laser-induced breakdown spectroscopy measurement of the processing process, laser parameters (energy, defocusing amount and the like) are regulated and controlled in real time according to information such as spectral peak positions, peak values and the like, and the processing effect is improved through real-time regulation and control of the processing process;
(4) the technical scheme provided by the invention can be suitable for processing various heterogeneous materials, has high efficiency and good processing quality, and is easy to realize automation and batch production.
Drawings
FIG. 1 shows a composite surface polished with a composite laser.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail below with reference to the accompanying drawings in conjunction with specific examples of composite laser surface polishing of SiC fiber reinforced resin matrix composites.
(1) Determining the phase P of the most abundant heterogeneous material to be processedMThe resin phase and the phase P with the highest laser action thresholdFMPhase P with lowest threshold for SiC fibre and laser actionFmIs a resin phase;
(2) selecting the two phases to have a relative highest absorbance ultraviolet wavelength L1 of 193nm and a relative highest absorbance infrared wavelength L2 of 1064 nm;
(3) the resin phase with the most content is respectively corresponding to the irradiation action depth D of the ultraviolet light wavelength L1 and the infrared light wavelength L2 under different irradiation densitiesMWidth of irradiation BMWidth E of the region affected by irradiationMThe parameters are as follows, wherein the processing depth, action width and influence area width of the process requirement are respectively 1 μm, unlimited and 10 μm, thereby obtaining the highest energy density of 6.0J/cm respectively corresponding to the ultraviolet light wavelength L1 and the infrared light wavelength L2 for processing the heterogeneous material2(PM，L1)、750KW/cm2(PM，L2)；
Figure BDA0003386226530000081
(4) Determining irradiation depth D of the phase SiC fibers with the highest laser action threshold under different irradiation densities corresponding to the ultraviolet light wavelength L1 and the infrared light wavelength L2FMWidth of irradiation BFMWidth E of the region affected by irradiationFMThe parameters are as follows, wherein the processing depth, action width and influence area width of the process requirement are respectively 1 μm, unlimited and 10 μm, thereby obtaining the highest energy density of 7.0J/cm/L of the heterogeneous material processed by the composite laser wavelengths L1 and L22(PFM，L1)，1400KW/cm2(PFM，L2)；
Figure BDA0003386226530000082
(5) The phase P with the highest content in the SiC fiber reinforced composite material to be processedMPhase P with lowest lasing thresholdFmDirectly using a laser with a wavelength of 1064nm and adopting 750W/cm2(PFmL2) laser irradiation density to process the heterogeneous material and realize the phase P with the lowest laser action threshold value in the processing areaFmThe processing of (3) and monitoring the peak position and peak value of the laser induced spectrum in real time by adopting a spectrum device;
(7) when the peak position of the monitored laser-induced spectrum changes or the peak value is reduced by 10% or more, recording the position corresponding to the change; using 1064nm laser with 750W/cm wavelength2(PFmL2) irradiating the heterogeneous material with laser of the laser irradiation parameters until all surfaces to be processed have been processed;
(8) calculating the recorded positions, calculating the average width K of the recorded positions to be 32 μm, and searching corresponding x Fth(PFM，L1)＝1.0J/cm2Processing an area with the recording area size larger than K, and monitoring the peak position and the peak value of the laser-induced spectrum in real time by adopting a spectrum device;
(9) when the peak position of the monitored laser induced spectrum changes, or the peak value changes by 10% or more, recording the position corresponding to the change; adopt 1064nm wavelength laser, using 750W/cm2(PFmL2) irradiating the heterogeneous material with laser light of the laser irradiation parameters until all recorded surfaces have been processed;
(10) using a 193nm wavelength of 0.4J/cm2(PFML1) laser irradiation density, setting the spot to the minimum state with a diaphragm, and realizing minimum spot scanning processing for the recording position until no change in the laser-induced spectral peak value occurs any more.
As shown in fig. 1, it can be seen from the figure that the surface processing of the SiC fiber reinforced resin matrix composite material can be realized without damaging the fiber by adopting the laser irradiation with specific parameters, combining the real-time monitoring of the spectral parameters and the laser parameter regulation and control, and the advantages of the invention can be embodied.

Claims (1)

1. A method for efficiently processing heterogeneous materials by composite laser is characterized by comprising the following steps: the method comprises the following specific steps:
(1) determining the phase P of the most abundant heterogeneous material to be processedMPhase P with highest lasing thresholdFMPhase P with lowest lasing thresholdFm；
(2) According to the most abundant phase PMPhase P with highest lasing thresholdFMPhase P with lowest lasing thresholdFmThe absorption rate of ultraviolet light-infrared light is selected, and an ultraviolet light wavelength L1 with the highest relative absorption rate and an infrared light wavelength L2 with the highest relative absorption rate are selected;
(3) determination of the most abundant phase PMRespectively corresponding to the irradiation depth D of the ultraviolet light wavelength L1 and the infrared light wavelength L2 under different irradiation densitiesMWidth of irradiation BMWidth E of the region affected by irradiationMUntil reaching a certain multiple a, using a damage threshold (a +0.5) × Fth(PM) Depth of action of applied radiation DMWidth of irradiation BMWidth E of the region affected by irradiationMThe processing requirements are not met, and the phase P with the maximum content of the processing heterogeneous material with the ultraviolet light wavelength L1 and the infrared light wavelength L2 is obtainedMRespective highest laser irradiation density a 1Fth(PM，L1)、a2*Fth(PM，L2)；
(4) Determining the phase P with the highest lasing thresholdFMCorresponding to the irradiation depth D of the ultraviolet light wavelength L1 and the infrared light wavelength L2 under different irradiation densitiesFMWidth of irradiation BFMWidth E of the region affected by irradiationFMUntil a certain multiple b is reached, a damage threshold value (b +0.5) F is adoptedth(PFM) Depth of action of applied radiation DFMWidth of irradiation BFMWidth E of the region affected by irradiationFMThe processing requirements are not met, and the phase P with the highest laser action threshold of the heterogeneous material processed by the ultraviolet light wavelength L1 and the infrared light wavelength L2 is obtainedFMRespective highest laser irradiation density b 1Fth(PFM，L1)，b2*Fth(PFM，L2)；
(5) Determining the phase P with the lowest lasing thresholdFmCorresponding to the irradiation depth D of the ultraviolet light wavelength L1 and the infrared light wavelength L2 under different irradiation densitiesFmWidth of irradiation BFmWidth E of the region affected by irradiationFmUntil reaching a certain multiple c, a damage threshold (c +0.5) × F is usedthDepth of action of applied radiation DFmWidth of irradiation BFmWidth E of the region affected by irradiationFmThe processing requirements are not met, and the phase P with the lowest laser action threshold of the heterogeneous material processed by the ultraviolet light wavelength L1 and the infrared light wavelength L2 is obtainedFmRespective highest laser irradiation density c 1Fth(PFm，L1)、c2*Fth(PFm，L2)；
(6) When the most abundant phase P is present in the heterogeneous material to be processedMPhase P with lowest lasing thresholdFmWhen the laser with infrared wavelength L2 is used, c 2F is adoptedth(PFmL2) laser irradiation density to process the heterogeneous material to be processed, and realizing the phase P with the lowest laser action threshold in the processing areaFmMonitoring the peak position and the peak value of the laser induced spectrum in real time by adopting a spectrum device, and entering the step (7);when the maximum content of phase P in the heterogeneous material to be processed is reachedMPhase P not having the lowest lasing thresholdFmThen, entering the step (11);
(7) when the peak position of the monitored laser-induced spectrum changes or the peak value is reduced by 10% or more, recording the position corresponding to the change; using the wavelength L2 of infrared light and the laser irradiation density c 2Fth(PFmL2) irradiating the heterogeneous material with the laser beam until all surfaces to be processed have been processed;
(8) calculating the recorded position, calculating the average width K of the recorded position, and finding out the laser irradiation density x F under the action of the corresponding ultraviolet light wavelength L1th(PFML1), irradiation width D under the action of the laser irradiation densityMWidth E of region affected by irradiationMWhen the sum is close to and not higher than the average width K, processing an area with the recording position size larger than K, and monitoring the peak position and the peak value of the laser-induced spectrum in real time by adopting a spectrum device;
(9) when the peak position of the monitored laser induced spectrum changes, or the peak value changes by 10% or more, recording the position corresponding to the change; using ultraviolet light wavelength L1 and laser irradiation density x Fth(PFML1) until all recorded surfaces have been machined;
(10) adopting ultraviolet light wavelength L1 and laser irradiation density Fth(PFML1), setting the light spot to the minimum state with a diaphragm, and implementing the minimum light spot scanning processing on the recording position until the change of the laser-induced spectrum peak value no longer occurs;
(11) when the most abundant phase P is present in the heterogeneous material to be processedMPhase P with highest lasing thresholdFMComparison c 2Fth(PFmL2) and Fth(PFML2), if c 2Fth(PFm，L2)>Fth(PML2), using the infrared light wavelength L2, laser irradiation density c2 x Fth(PFmL2) processing the heterogeneous material to be processed and monitoring its laser light in real time using spectroscopic equipmentInducing the peak position and the peak value of the spectrum, and entering the step (12); if c 2Fth(PFm，L2)<Fth(PFML2), go to step (15); when the maximum content of phase P in the heterogeneous material to be processed is reachedMNot of the phase P with the highest lasing thresholdFMThen, entering the step (20);
(12) when the peak position of the monitored laser-induced spectrum changes or the peak value is reduced by 10% or more, recording the position corresponding to the change; using the wavelength L2 of infrared light and the laser irradiation density c 2Fth(PFmL2) irradiating the heterogeneous material with the laser beam until all surfaces to be processed have been processed;
(13) the recorded position is calculated by using the wavelength L2 of infrared light and the irradiation density F of laserth(PFML2) processing the recorded area; using the wavelength L2 of infrared light and the laser irradiation density Fth(PFML2), until all surfaces to be processed have been processed, monitoring the peak position and peak value of its laser-induced spectrum in real time by using a spectroscopic device;
(14) when the peak position of the monitored laser induced spectrum changes, or the peak value changes by 10% or more, recording the position corresponding to the change; using ultraviolet light wavelength L1 and laser irradiation density a 1Fth(PFML1) until no change in the peak value of the laser-induced spectrum occurs;
(15) if c 2Fth(PFm，L2)<Fth(PFML2), using uv light wavelength L1, laser irradiation density c1 x Fth(PFmL1) processing the heterogeneous material to be processed, and monitoring the peak position and peak value of the laser-induced spectrum in real time by using a spectrum device;
(16) when the peak position of the monitored laser-induced spectrum changes or the peak value is reduced by 10% or more, recording the position corresponding to the change; using ultraviolet light wavelength L1 and laser irradiation density c 1Fth(PFmL1) irradiating the heterogeneous material with laser light until all surfaces to be machined have been machined;
(17) calculating the recorded position, calculating the average width K of the recorded position, and finding out the laser irradiation density y x F under the action of the corresponding ultraviolet light wavelength L1th(PFML1), irradiation width D under the action of the laser irradiation densityMWidth E of region affected by irradiationMWhen the sum is close to and not higher than the average width K, processing an area with the recording position size larger than K, and monitoring the peak position and the peak value of the laser-induced spectrum in real time by adopting a spectrum device;
(18) when the peak position of the monitored laser induced spectrum changes, or the peak value changes by 10% or more, recording the position corresponding to the change; using ultraviolet wavelength L1 and laser irradiation density y Fth(PFML1) until all recorded surfaces have been machined;
(19) adopting ultraviolet light wavelength L1 and laser irradiation density Fth(PFML1) the processing of the recording position is effected until no change in the peak value of the laser-induced spectrum occurs anymore;
(20) when the most abundant phase P is present in the heterogeneous material to be processedMNot of the phase P with the highest lasing thresholdFMOr not the phase P with the lowest lasing thresholdFmSelecting the wavelength L2 of infrared light and the laser irradiation density c 2Fth(PFmL2) nearest x Fth(PML2) processing the heterogeneous material to be processed, and monitoring the peak position and peak value of the laser induced spectrum in real time by using a spectrum device;
(21) when the peak position of the monitored laser-induced spectrum changes or the peak value is reduced by 10% or more, recording the position corresponding to the change; using the wavelength L2 of infrared light and the laser irradiation density x Fth(PML2) irradiating the heterogeneous material with the laser beam until all surfaces to be processed have been processed;
(22) calculating the recorded position, calculating the average width K of the recorded position, and finding out the laser irradiation density z x F under the action of the corresponding ultraviolet light wavelength L1th(PML1), irradiation with the laser irradiation densityWidth DMWidth E of region affected by irradiationMWhen the sum is close to and not higher than the average width K, processing an area with the recording position size larger than K, and monitoring the peak position and the peak value of the laser-induced spectrum in real time by adopting a spectrum device;
(23) when the peak position of the monitored laser induced spectrum changes, or the peak value changes by 10% or more, recording the position corresponding to the change; using ultraviolet light wavelength L1 and laser irradiation density z x Fth(PML1) until all recorded surfaces have been machined;
(24) adopting ultraviolet light wavelength L1 and laser irradiation density Fth(PFML1), with the diaphragm setting the spot to the minimum state, minimum spot scanning processing for the recording position is realized until no change in the laser-induced spectral peak value occurs anymore.
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WO1995027587A1 (en) * 1994-04-08 1995-10-19 The Regents Of The University Of Michigan Method for controlling configuration of laser induced breakdown and ablation
JP2008004800A (en) * 2006-06-23 2008-01-10 Fujifilm Corp Circuit board and its manufacturing method
US20110240617A1 (en) * 2004-03-31 2011-10-06 Imra America, Inc. Laser-based material processing apparatus and methods
CN206230160U (en) * 2016-09-23 2017-06-09 张立国 A kind of multilayer material layered milling system of processing based on Spatial Coupling laser spot
CN107309554A (en) * 2017-03-16 2017-11-03 融之航信息科技（苏州）有限公司 A kind of laser ablation devices and methods therefor in damage of composite materials region
CN111037101A (en) * 2019-11-29 2020-04-21 北京卫星制造厂有限公司 Efficient precision machining method for composite material
CN111299810A (en) * 2020-02-24 2020-06-19 中国科学院微电子研究所 Laser processing method and device

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* Cited by examiner, † Cited by third party
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WO1995027587A1 (en) * 1994-04-08 1995-10-19 The Regents Of The University Of Michigan Method for controlling configuration of laser induced breakdown and ablation
US20110240617A1 (en) * 2004-03-31 2011-10-06 Imra America, Inc. Laser-based material processing apparatus and methods
JP2008004800A (en) * 2006-06-23 2008-01-10 Fujifilm Corp Circuit board and its manufacturing method
CN206230160U (en) * 2016-09-23 2017-06-09 张立国 A kind of multilayer material layered milling system of processing based on Spatial Coupling laser spot
CN107309554A (en) * 2017-03-16 2017-11-03 融之航信息科技（苏州）有限公司 A kind of laser ablation devices and methods therefor in damage of composite materials region
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