CN114156250A - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN114156250A
CN114156250A CN202110861495.7A CN202110861495A CN114156250A CN 114156250 A CN114156250 A CN 114156250A CN 202110861495 A CN202110861495 A CN 202110861495A CN 114156250 A CN114156250 A CN 114156250A
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CN
China
Prior art keywords
porous body
semiconductor device
connector
semiconductor element
semiconductor
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Application number
CN202110861495.7A
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English (en)
Inventor
蔡誉宁
仓谷英敏
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Toshiba Corp
Toshiba Electronic Devices and Storage Corp
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Toshiba Corp
Toshiba Electronic Devices and Storage Corp
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Publication of CN114156250A publication Critical patent/CN114156250A/zh
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Abstract

本发明的实施方式提供一种可靠性高的半导体装置。实施方式的半导体装置具备：底座；半导体元件，设置在底座之上；连接器，设置在半导体元件之上，具有上表面、侧面、和至少设置于侧面的具有多个细孔的多孔体；以及模压树脂，设置在半导体元件的周围以及至少连接器的侧面，连接器的上表面露出。

Description

半导体装置
相关申请：
本申请以日本专利申请2020－150569号(申请日为2020年9月8日)为基础申请要求其优先权。本申请通过参照该基础申请而包括基础申请的全部内容。
技术领域
实施方式主要涉及一种半导体装置。
背景技术
面向发电或输电、泵或鼓风机等的旋转设备、通信***或工厂等的电源装置、使用交流电动机的铁路、电动汽车、家用电器等广泛领域的MOSFET(Metal-Oxide-Semiconductor Field-Effect-Transistor：金属氧化物半导体场效应晶体管)或IGBT(Insulated Gate Bipolar Transistor：绝缘栅双极晶体管)等的、设计用于电力控制的功率半导体元件正在进行开发。
此外，还正在进行使用了上述功率半导体元件的、作为功率模块的半导体装置的开发。在这样的半导体装置中要求高电流密度化、低损耗化和高散热化等的规格。
发明内容
本发明的实施方式提供一种可靠性高的半导体装置。
实施方式的半导体装置具备：底座；半导体元件，设置在底座之上；连接器，设置在半导体元件之上，具有上表面、侧面、和至少设置于侧面的具有多个细孔的多孔体；以及模压树脂，设置在半导体元件的周围以及至少连接器的侧面，连接器的上表面露出。
附图说明
图1是实施方式的半导体装置的示意剖视图。
图2是实施方式的多孔体以及源极连接器的截面的显微镜照片。
具体实施方式
以下，参照附图，对本发明的实施方式进行说明。再有，在以下说明中，有时对相同或类似的构件赋予相同的符号。此外，有时对说明过一次的构件等适当地省略其说明。
在本说明书中，为了示出部件等的位置关系，将附图的上方向描述为“上”，将附图的下方向描述为“下”。本说明书中“上”、“下”的概念不一定是表示与重力方向的关系的术语。
(实施方式)
图1是本实施方式的半导体装置100的示意剖视图。
半导体装置100具备底座2、第一接合材料4、半导体元件6、第二接合材料8、源极连接器(连接器的一例)10、栅极连接器20、连接器22、第三接合材料24、第四接合材料26和模压树脂30。
底座2用于半导体元件6与未图示的外部电路的连接。底座2例如是导电性的板状构件。
半导体元件6设置在底座2之上。半导体元件6例如是纵型MOSFET，但不限定于此。例如，在半导体元件6是MOSFET的情况下，设置在半导体元件6的底面上的未图示的漏极电极，通过设置在半导体元件6和底座2之间的第一接合材料4而与底座2电连接。
源极连接器10设置在半导体元件6之上。源极连接器10具有底面10a、侧面10b、上表面10c、侧面10d、面10e和侧面10f。例如，在半导体元件6是MOSFET的情况下，设置在半导体元件6的上表面上的未图示的源极电极，通过设置在半导体元件6和源极连接器10之间的第二接合材料8而与源极连接器10电连接。源极连接器10例如用于半导体元件6的源极电极与未示出的外部电路的电连接。
源极连接器10具有多孔体12。具体地，在源极连接器10的至少侧面10b上设置有具有多个细孔的多孔体12。在半导体装置100中，作为多孔体12的多孔体12a、12b、12c、12d、12e和12f分别设置在源极连接器的底面10a、侧面10b、上表面10c、侧面10d、面10e和侧面10f上。再有，也可以不设置多孔体12a、12c、12d、12e和12f。
栅极连接器20的一端通过第三接合材料24而与设置在半导体元件6的上表面的未图示的栅极电极电连接。栅极连接器20的另一端经由第四接合材料26电连接在连接器22上。栅极连接器20以及连接器22用于半导体元件6的栅极电极与未图示的外部电路的电连接。再有，半导体元件6的栅极电极与外部电路的电连接也可以使用键合线等导线。
模压树脂30设置在底座2的上表面、第一接合材料4的周围、半导体元件6的周围、栅极连接器20的周围、第三接合材料24的周围以及第四接合材料26的周围。此外，模压树脂30还设置在多孔体12a、12b、12d、12e和12f的表面上。多孔体12c、底座2的底面以及连接器22的一部分露出。再有，在未设置多孔体12c的源极连接器10的情况下，源极连接器10的上表面10c露出。
底座2、源极连接器10、栅极连接器20以及连接器22包含例如Cu(铜)等金属或合金。再有，也可以在底座2、源极连接器10、栅极连接器20以及连接器22的表面上设置包含例如Au(金)、Pt(白金)、Pd(钯)、Ag(银)、Cu(铜)、Sn(锡)或Ni(镍)等的薄膜。
作为第一接合材料4、第二接合材料8、第三接合材料24和第四接合材料26，使用包含焊锡或银微粒的导电性树脂等。
多孔体12例如包含Al(铝)、Zn(锌)、Mg(镁)、Ni(镍)、Co(钴)、Fe(铁)、Cr(铬)、Ti(钛)、Zr(锆)、Cu(铜)。此外，多孔体12也可以是包含上述元素的合金。优选的是，多孔体12包含Ni。
模压树脂30例如是包含石英(SiO2)颗粒等填料的环氧树脂等。
图2是实施方式的多孔体12以及源极连接器10的截面的显微镜(扫描电子显微镜(Scanning Electron Microscope)SEM)照片。再有，图2所示的显微镜照片是以500倍的放大率拍摄而成的。在源极连接器10之上形成有多孔体12。并且，多孔体12具有多个细孔14。图2中示出了作为多个细孔14的细孔14a、14b、14c和14d。再有，图2所示的多孔体12是由Ni形成的。
优选的是，多个细孔14的平均镀层深度(平均深度的一例)为3μm以上20μm以下。
优选的是，多个细孔14的平均孔间距为1μm以上20μm以下。
对多个细孔14的平均镀层深度和平均孔间距的测量方法进行说明。根据JIS B0601：2013(ISO4287：1997)，在多孔体12的截面上，对测量截面曲线适用规定的临界值λs的低频滤波器，得到截面曲线(primary profile)。然后，利用临界值λc的高频滤波器，从截面曲线中除去较长的波长成分，得到轮廓曲线。将该轮廓曲线称为粗糙度曲线(roughnessprofile)。再有，λs以及λc的标准关系例如基于JIS B 0651。
此外，决定基准面(粗糙度曲线的底面)。例如，在用Cu形成源极连接器10，用Ni形成多孔体12的情况下，所述基准面是Cu与Ni的界面。
所述平均镀层深度，是在上述粗糙度曲线上，对顶点(最大高度)部分与基准面之间的距离测量合计20个，并取平均而得到的。再有，镀层深度相当于JIS B 0601：2013(ISO4287：1997)的Zt(最大截面高度、或者轮廓曲线要素的高度(profile elementheight))。
所述平均孔间距，是在上述粗糙度曲线上，在平行于基准面的面内测量合计20个相邻的顶点之间的距离，并取平均而得到的。
对于多孔体12的表面粗糙度，优选的是，线粗糙度(JIS B 0601的最大高度粗糙度)Rz为3μm以上20μm以下。此外，优选的是，面粗糙度Sz(ISO25178)为5μm以上30μm以下。再有，对于线粗糙度Rz和面粗糙度Sz，使用市售的粗糙度测量器进行测量。
优选的是，多孔体12的表面的润湿性为38dyne/cm以上。
此外，优选的是，多孔体12和模压树脂30之间的抗剪强度高。再有，例如可以使用市售的结合力测试器来测量抗剪强度。
下面，对实施方式的半导体装置100的制造方法进行说明。
对多孔体12的制造方法进行说明。例如，首先，在电解电镀工艺中，在源极连接器10的表面产生微细的氢(H2)气泡。接着，使电镀层生长，以吸收该氢气泡。由此能够形成用作多孔体12的电镀层。在此，还可以在源极连接器10的所有表面上形成多孔体12。此外，通过在特定表面上进行覆盖(罩)，还可以使得在其特定表面上不形成多孔体12。再有，实施方式的多孔体12的制造方法不限定于此。
可以利用公知的方法来良好地进行采用了形成有多孔体12的源极连接器10的半导体装置100的制造。
下面，对实施方式的半导体装置的作用效果进行记载。
为了防止来自光、热、湿度和外部杂质等的侵害，利用模压树脂30对半导体元件6进行密封。在此，如何进行这种密封后的半导体元件6与外部电路的电连接成为问题。
首先，在半导体元件6的栅极电极上输入对半导体元件6进行控制的信号。这样的控制信号的电流或电压一般不大。因此，例如像半导体装置100这样地，虽然布线电阻变大，但是可以经由栅极连接器20和连接器22这两个连接器进行半导体元件6的栅极电极与外部电路的电连接，而且以通过模压树脂30对栅极连接器20整体进行覆盖的方式来进行。这是因为，与使用一个连接器与外部电路进行连接的情况相比，在经由两个连接器进行连接的情况下，外部杂质难以从模压树脂30的外部侵入到半导体元件6。
但是，对于源极电极与外部电路的电连接，为了减少布线的欧姆损耗，不像对栅极电极那样地使用多个连接器，而是通过使源极连接器10的上表面从模压树脂30露出来进行。该情况下，在源极连接器10的特别是侧面10b和侧面10d与模压树脂30的界面上，由于安装时的热应力或驱动半导体元件6时的加热/冷却循环而容易发生模压树脂30的剥离。由此存在外部的杂质等从模压树脂30所剥离的地方侵入到半导体元件6的表面，使半导体元件6的电极腐蚀而引起导通不良的问题。此外，与侧面10d、面10e和侧面10f这样的爬电距离长的部分相比，在侧面10b这样的爬电距离短的部分上，由于外部的杂质等侵入的路径变短，因此该问题更严重。再有，在模压树脂30与底座2的界面上也存在同样的问题。
为了抑制模压树脂30的剥离，考虑对源极连接器10的表面或底座2的表面进行刻蚀处理，提高模压树脂30与源极连接器10的表面或底座2的表面之间的粘着性(锚定效应)。但是，优选用于源极连接器10或底座2的铜容易产生表面氧化，耐腐蚀性也不高。因此，在刻蚀处理中无法充分解决模压树脂30的剥离问题。
为了提高耐腐蚀性，考虑用Ni等的镀层来保护源极连接器10的表面和底座2的表面的方法。但是，用Ni等的镀层保护的源极连接器10的表面或底座2的表面与模压树脂30之间的粘着性不好。因此，无法解决模压树脂30的剥离问题。
实施方式的半导体装置100具备：底座2；半导体元件6，设置在底座2之上；源极连接器10，设置在半导体元件6之上，具有上表面10c、侧面10b和至少设置于侧面10b上的具有多个细孔14的多孔体12；模压树脂，设置在半导体元件6的周围以及至少源极连接器的侧面10b上，源极连接器的上表面10c露出。
通过将多孔体12设置在源极连接器10的侧面10b上，模压树脂30渗透到多孔体12的细孔14中而粘着性提高，从而难以引起剥离。此外，通过设置多孔体12，源极连接器10的耐腐蚀性提高。因此，能提供一种可靠性高的半导体装置。
为了提高多孔体12与模压树脂30的粘着性，优选的是，多个细孔14的平均镀层深度为3μm以上20μm以下。在小于3μm的情况下，得不到充分的粘着性。另一方面，在大于20μm时，在制造时会产生许多电镀屑，无法很好地形成多孔体12。
此外，优选的是，多个细孔的平均孔间距为1μm以上20μm以下。在小于1μm的情况下，得不到充分的粘着性。另一方面，在大于20μm时，在制造时会产生许多电镀屑，无法很好地形成多孔体12。
此外，优选的是，多孔体的线粗糙度Rz为3μm以上20μm以下。在小于3μm的情况下，得不到充分的粘着性。另一方面，在大于20μm时，在制造时会产生许多电镀屑，无法很好地形成多孔体12。
优选的是，多孔体12包含Ni。这是因为能够容易地形成具有上述特性的多孔体12。
再有，多孔体12也可以进一步设置在源极连接器的上表面10c上。这是因为，通过设置多孔体12，就能良好地形成半导体装置100的安装时所使用的例如包含Sn(锡)的电镀层。
以下，与比较例1和比较例2对比地说明实施例1和实施例2。
(实施例1)
采用电解电镀工艺，在源极连接器10的表面产生微细的氢(H2)气泡。接着，使Ni电镀层生长，以吸收该氢气泡，制造出在整个表面上以膜厚10μm形成有多孔体12的源极连接器10。然后，使用该源极连接器制造出半导体装置。
(实施例2)
用与实施例1同样的方法制造出半导体装置。但是，在制造半导体装置的时候使用了在整个表面上以膜厚20μm形成有多孔体12的源极连接器10。
(比较例1)
使用不具有多孔体12的源极连接器10来制造出半导体装置。
(比较例2)
用与实施例1同样的方法制造出半导体装置。但是，在制造半导体装置的时候使用了在整个表面上以膜厚3μm形成有多孔体的源极连接器10。
下面，针对实施例1、实施例2、比较例1以及比较例2，用以下方法评价了平均镀层深度、平均孔间距、线粗糙度Rz、面粗糙度Sz、表面张力润湿判断以及抗剪强度比。
根据多孔体12的截面SEM观察来评价平均镀层深度。
根据多孔体12的截面SEM观察来评价平均孔间距。
通过使用激光显微镜(Olympus公司生产的OLS4100)对多孔体12的表面进行了线粗糙度Rz和面粗糙度Sz的测量。
通过使用Arcotest公司生产的各表面张力的测试笔在多孔体12的表面画直线，进行了表面张力润湿判断。在此，在画完直线后直线状态不改变的情况下，判定为湿润。例如，在使用30dyne/cm的测试笔在多孔体12的表面画出的直线的状态不改变的情况下，判定为该多孔体12的表面的润湿性至少在30dyne/cm以上。该情况下，在后述的表1中记载为“○”。另一方面，在使用30dyne/cm的测试笔画出直线后，在5分钟以内变成水滴状的情况下，关于30dyne/cm的润湿性记载为“△”。此外，在使用30dyne/cm的测试笔画出直线后，在5秒以内变成水滴状的情况下，关于30dyne/cm的润湿性记载为“×”。并且，对润湿性高的材料判断为模压树脂30对多孔体12的润湿性高，多孔体12与模压树脂30的粘着性提高了。
使用结合力测试器(Nordon Dage公司Dage-4000)测量了抗剪强度比。在此，对使用两种树脂(树脂1、树脂2)制造的半导体装置测量了抗剪强度比。树脂1是线膨胀系数α1＝14(ppm/℃)，玻璃化转变温度Tg＝135℃。树脂2的线膨胀系数α1＝21(ppm/℃)，玻璃化转变温度Tg＝165℃。在此，抗剪强度比取相对于比较例1的半导体装置的强度的比。
表1：
Figure BDA0003185855520000081
从表1可知，在实施例1和实施例2中，虽然根据测量的地方不同而有不同，但平均镀层深度处于3μm以上20μm以下的范围，平均孔间距处于1μm以上20μm以下的范围，线粗糙度Rz处于3μm以上20μm以下的范围，面粗糙度Sz处于5μm以上30μm以下的范围。表面张力润湿判断中，44dyne/cm的判断也是“○”，相对于比较例1示出了高的润湿性。并且，由于抗剪强度比在树脂1和树脂2的任一种情况下都高，因此判断为模压树脂30与多孔体12的粘着性变高。
在比较例1中，表面张力润湿判断(40dyne/cm)和表面张力润湿判断(44dyne/cm)的结果是“△”。
在比较例2中，平均镀层深度、平均孔间距、线粗糙度Rz和面粗糙度Sz都不是优选的范围。并且，表面张力润湿判断(38dyne/cm)的结果是“△”，表面张力润湿判断(40dyne/cm)和表面张力润湿判断(44dyne/cm)的结果是“×”，因此，判断为模压树脂30与多孔体12的粘着性低。
对本发明的几个实施方式进行了说明，但这些实施方式是作为例子而提出的，并不是想限定发明范围。这些新的实施方式可以以其他各种各样的方式实施，可以在不脱离发明主旨的范围内进行各种各样的省略、置换和变更。这些实施方式或其变形包含在发明范围或主旨内，并且也包含在权利要求记载的发明及其等同范围内。

Claims (10)

1.一种半导体装置，其中，具备：
底座；
半导体元件，设置在所述底座之上；
连接器，设置在所述半导体元件之上，具有上表面、侧面和至少设置于所述侧面的具有多个细孔的多孔体；以及
模压树脂，设置在所述半导体元件的周围以及至少所述连接器的所述侧面，
所述连接器的上表面露出。
2.根据权利要求1所述的半导体装置，其中，
所述多个细孔的平均深度为3μm以上20μm以下。
3.根据权利要求1所述的半导体装置，其中，
所述多个细孔的平均孔间距为1μm以上20μm以下。
4.根据权利要求1所述的半导体装置，其中，
所述多孔体的线粗糙度Rz为3μm以上20μm以下。
5.根据权利要求1所述的半导体装置，其中，
所述多孔体的面粗糙度Sz为5μm以上30μm以下。
6.根据权利要求1所述的半导体装置，其中，
所述多孔体的表面的润湿性为38dyne/cm以上。
7.根据权利要求1所述的半导体装置，其中，
所述多孔体包含镍Ni。
8.根据权利要求1所述的半导体装置，其中，
所述多孔体还设置在所述上表面，设置于所述上表面的所述多孔体露出。
9.根据权利要求1所述的半导体装置，其中，进一步具备设置在所述底座和所述半导体元件之间的第一接合材料。
10.根据权利要求1所述的半导体装置，其中，进一步具备设置在所述半导体元件和所述连接器之间的第二接合材料。
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