CN114150368B - Material melting device and application method thereof - Google Patents
Material melting device and application method thereof Download PDFInfo
- Publication number
- CN114150368B CN114150368B CN202111214784.4A CN202111214784A CN114150368B CN 114150368 B CN114150368 B CN 114150368B CN 202111214784 A CN202111214784 A CN 202111214784A CN 114150368 B CN114150368 B CN 114150368B
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- China
- Prior art keywords
- heat insulation
- crucible
- water cooling
- insulation plate
- cooling screen
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- 239000000463 material Substances 0.000 title claims abstract description 51
- 238000002844 melting Methods 0.000 title claims abstract description 38
- 230000008018 melting Effects 0.000 title claims abstract description 38
- 238000000034 method Methods 0.000 title claims abstract description 17
- 238000009413 insulation Methods 0.000 claims abstract description 56
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 37
- 238000001816 cooling Methods 0.000 claims abstract description 36
- 230000000903 blocking effect Effects 0.000 claims abstract description 3
- 239000002210 silicon-based material Substances 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000013078 crystal Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000006978 adaptation Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000010309 melting process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- CREMABGTGYGIQB-UHFFFAOYSA-N carbon carbon Chemical compound C.C CREMABGTGYGIQB-UHFFFAOYSA-N 0.000 description 1
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002893 slag Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention provides a material melting device and a using method thereof, wherein the material melting device comprises a crucible and a water cooling screen arranged above the crucible, the material melting device further comprises a heat insulation mechanism, the heat insulation mechanism comprises a heat insulation plate, the heat insulation plate is arranged between the crucible and the water cooling screen, and the heat insulation plate is used for blocking heat convection between the crucible and the water cooling screen.
Description
Technical Field
The invention relates to a heating furnace, in particular to a material melting device and a using method thereof.
Background
In the current RCZ monocrystalline silicon drawing process, the service life of a single crucible can reach more than 300 hours, and the number of drawing silicon rods is generally about 5-7. After the single crystal furnace is shut down and cleaned, the material is fed, at the moment, a certain amount of silicon material is filled in the quartz crucible, the quartz crucible is heated after being pumped out and pressurized, the silicon material in the crucible is melted, and after the silicon material in the crucible is melted, the material is continuously fed into the quartz crucible in a divided manner through the quartz feeding barrel, and finally the material is fed to the feeding limit of the crucible, so that the feeding process is completed.
Taking the most common 32 inch thermal field as an example, after the silicon materials in the crucible are completely melted, the total feeding amount of the crucible is about 650kg, and the initial charging amount of the crucible is about 350kg. In the process of primary charging and melting of the crucible, the single crystal furnace has a temperature rising process, and the whole process lasts for about 1-2 hours, so that the efficiency of primary charging and melting is lower than that of secondary charging and melting. The current primary charging and material conversion efficiency is about 50kg/h, and the secondary charging and material conversion efficiency is about 70kg/h. In order to shorten the whole material melting time, improve the material melting efficiency, and improve the initial material melting efficiency is important.
In the current thermal field, in order to improve the pulling speed of single crystals, a water cooling screen is designed and installed in the single crystal furnace. The water cooling screen is continuously filled with cooling water, the whole water cooling screen and the peripheral temperature of the water cooling screen are low, and in the material melting process, the water cooling screen can quickly absorb the temperature in the single crystal furnace, so that the temperature in the single crystal furnace is low under the same power condition, and the initial material melting efficiency is greatly affected.
Disclosure of Invention
The embodiment of the invention provides a material melting device and a using method thereof, which at least solve the problem that a water cooling screen takes away excessive heat in the related art.
According to one embodiment of the invention, the material melting device comprises a crucible and a water cooling screen arranged above the crucible, and further comprises a heat insulation mechanism, wherein the heat insulation mechanism comprises a heat insulation plate, the heat insulation plate is arranged between the crucible and the water cooling screen, and the heat insulation plate is used for blocking heat convection between the crucible and the water cooling screen.
Further, the material melting device further comprises a lifting mechanism, the lifting mechanism comprises a chuck, the heat insulation mechanism further comprises a heat insulation plate, a connecting rod and a connector, the heat insulation plate and the connector are respectively arranged at two ends of the connecting rod, and the connector is connected with the chuck.
Further, the connector is provided with an internal thread, and the internal thread is matched with an external thread of the chuck.
Further, the heat insulation plate is circular, the water cooling screen comprises a lower opening positioned near one end of the crucible, the lower opening is circular, and the diameter of the heat insulation plate is 20-30 mm smaller than the inner diameter of the lower opening of the water cooling screen.
Further, the heat insulation mechanism further comprises a screw plug, the screw plug is fixed at one end of the connecting rod, and the heat insulation plate is detachably connected to the screw plug.
According to another embodiment of the present invention, there is provided a method for using a material melting device, including:
s1, filling silicon materials into a crucible;
s2, vacuumizing, pressurizing and heating the material melting device;
s3, arranging a heat insulation plate of a heat insulation mechanism between the crucible and the water cooling screen to block heat convection between the crucible and the water cooling screen;
s4, taking out the heat insulation plate after material melting is completed;
s5, continuously filling silicon materials into the crucible.
Further, in S3, the heat insulation board is connected to the connecting rod, the connecting rod is connected to the connector, the connector is mounted on the chuck of the lifting mechanism, and the heat insulation board is moved by the lifting mechanism, so that the heat insulation board is located between the crucible and the water cooling screen.
The beneficial effects are that:
when the material melting device is used for initially charging materials, the heat insulation plate is arranged between the crucible and the water cooling screen, so that the heat insulation plate can block convection of low temperature in the water cooling screen and high temperature near the crucible, heat in the crucible taken away by the water cooling screen is greatly reduced, and the initial charging material melting efficiency of the material melting device is improved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention and do not constitute a limitation on the invention. In the drawings:
fig. 1 is a schematic cross-sectional view of a material melting device according to an embodiment of the present invention.
Fig. 2 is a schematic cross-sectional view of the thermal insulation mechanism of the melting apparatus shown in fig. 1.
The names of the parts represented by the numbers or letters in the figures are as follows:
100. a material melting device; 10. a crucible; 30. a water cooling screen; 50. a heat insulation mechanism; 52. a heat insulating plate; 54. a connecting rod; 56. a connector; 58. a screw plug; 70. a lifting mechanism; 71. a chuck.
Detailed Description
The invention will be described in detail hereinafter with reference to the drawings in conjunction with embodiments. It should be noted that, without conflict, the embodiments of the present invention and features of the embodiments may be combined with each other.
It should be noted that the terms "first," "second," and the like in the description and the claims of the present invention and the above figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order.
Referring to fig. 1 and 2, a material melting device 100 is provided in an embodiment of the invention. The melting device 100 includes a crucible 10, a water cooling screen 30, and a heat insulation mechanism 50. A water cooled screen 30 is provided above the crucible 10. The insulating mechanism 50 includes an insulating plate 52. The heat shield 52 is disposed between the crucible 10 and the water cooling shield 30. The heat shield 52 is used to block the thermal convection between the crucible 10 and the water-cooled shield 30.
The crucible 10 and the water cooling screen 30 may be of a general design in industry, and will not be described herein.
The material melting device 100 further comprises a lifting mechanism 70. The pulling mechanism 70 includes a collet 71. The thermal insulation mechanism 50 includes a thermal insulation plate 52, a connecting rod 54, and a connector 56. The heat insulation plate 52 and the connector 56 are respectively disposed at two ends of the connecting rod 54. The connector 56 is connected to the collet 70. The lifting mechanism 70 can control the lifting of the insulating mechanism 50 so that the insulating plate 52 is positioned between the crucible 10 and the water screen 30.
In at least one embodiment, the connector 56 is provided with internal threads that mate with external threads of the collet 70.
In at least one embodiment, the heat shield 52 is circular, and the water-cooled shield 30 includes a lower opening near one end of the crucible, the lower opening having a circular shape. The diameter of the heat insulation plate 52 is 20 to 30 mm smaller than the inner diameter of the lower opening of the water cooling screen. Too large a heat shield 52 tends to block the passage of gas during the pressurization, too small a heat shield 52 would impair the ability to block the heat convection between the crucible 10 and the water cooling screen 30.
In at least one embodiment, the thermal isolation mechanism 50 further includes a plug screw 58, the plug screw 58 being secured to one end of the link 54, the thermal isolation plate 52 being removably coupled to the plug screw 58. It will be appreciated that the heat shield 52 and plug 58 may be threadably or snap-fit.
The heat insulation mechanism 50 is made of a material with a small thermal field conductivity, such as a carbon-carbon composite material, and the material can bear high temperature of 1450 ℃ or higher in use, does not deform at high temperature, does not drop slag, and does not pollute the silicon material.
Another embodiment of the present invention provides a method for using the material melting device 100, including:
s1, filling silicon materials into the crucible 10.
S2, vacuumizing, pressurizing and heating the material melting device 100.
S3, a heat insulation plate 52 of the heat insulation mechanism 50 is arranged between the crucible 10 and the water cooling screen 30 to block heat convection between the crucible 10 and the water cooling screen 30.
In this step, the heat shield 52 is connected to the link 54, and the link 54 is connected to the connector 56. The connector 56 is mounted on the chuck 71 of the pulling mechanism 70, and the heat shield 52 is moved by the pulling mechanism 70 so that the heat shield 52 is positioned between the crucible 10 and the water cooling screen 30.
S4, after material melting is completed, the heat insulation plate 52 is taken out.
S5, continuously filling silicon materials into the crucible 10. When the material melting device 100 enters the material melting process after the evacuation and the pressurization are finished, the heat insulation mechanism 50 can be fixed on the chuck 70, otherwise, due to the light weight of the heat insulation mechanism 50, the heat insulation mechanism 50 can shake in the crucible due to the change of the gas in the furnace chamber during the evacuation and the pressurization, and the falling accident is caused.
The following is an illustration of a specific use scenario, where the initial charge weight is about 350kg, the initial charge efficiency is 50kg/h, and the total time of initial charge (charging when a small amount of solids is needed in the crucible) is about 6.5 hours at a 32 inch thermal field. By using the heat insulation mechanism 50, the initial charging material conversion efficiency is improved to 55kg/h under the same power and the same initial charging material weight, the time is shortened to 5.8h, the initial charging material conversion time is shortened to 0.7 h/furnace, and the initial charging material conversion time is reduced by 10.77%.
The service life of the single crucible is calculated according to 300h, and the furnace number of the single furnace for charging materials every month is as follows: 30 (day) 24 (h/day)/300 (oven/h) =2.4 ovens/month; with the use of the insulating mechanism 50, a single furnace can save time: 2.4 (oven/month) ×0.7 (h/oven) =1.68 (h/month). Each furnace can increase the capacity per month, calculated as 150 kg/day per unit: 1.68 (h/month)/30 (day/month) 150 (kg/day)/24 (h/day) =0.35 kg/day. By using the insulation mechanism 50 scheme, the unit yield can be improved by 0.35 kg/day. As calculated in 1000 furnaces, 126 tons per year of ingot can be produced more per year.
the foregoing is merely a preferred embodiment of the present invention, and it should be noted that it will be apparent to those skilled in the art that numerous modifications and adaptations can be made without departing from the principles of the present invention, and such modifications and adaptations should and are intended to be comprehended within the scope of the present invention.
Claims (4)
1. The material melting method is based on a material melting device and comprises a crucible and a water cooling screen arranged above the crucible, wherein the material melting device further comprises a heat insulation mechanism, the heat insulation mechanism comprises a heat insulation plate, the heat insulation plate is arranged between the crucible and the water cooling screen, and the heat insulation plate is used for blocking heat convection between the crucible and the water cooling screen;
the material melting device further comprises a lifting mechanism, the lifting mechanism comprises a chuck, the heat insulation mechanism further comprises a connecting rod and a connector, the heat insulation plate and the connector are respectively arranged at two ends of the connecting rod, and the connector is connected with the chuck; the method is characterized in that: comprising the following steps:
s1, filling silicon materials into a crucible;
s2, vacuumizing, pressurizing and heating the material melting device;
s3, arranging a heat insulation plate of a heat insulation mechanism between the crucible and the water cooling screen to block heat convection between the crucible and the water cooling screen;
s4, taking out the heat insulation plate after material melting is completed;
s5, continuously filling silicon materials into the crucible;
in step S3, the heat insulation plate is connected to the connecting rod, the connecting rod is connected with the connector, the connector is arranged on the chuck of the lifting mechanism, and the heat insulation plate is moved through the lifting mechanism, so that the heat insulation plate is positioned between the crucible and the water cooling screen.
2. The method of converting material of claim 1, wherein: the connector is provided with an internal thread, and the internal thread is matched with an external thread of the chuck.
3. The method of converting material of claim 1, wherein: the heat insulating plate is circular, the water-cooling screen comprises a lower opening which is positioned near one end of the crucible, the lower opening is circular, and the diameter of the heat insulating plate is 20-30 mm smaller than the inner diameter of the lower opening.
4. The method of converting material of claim 1, wherein: the heat insulation mechanism further comprises a screw plug, the screw plug is fixed at one end of the connecting rod, and the heat insulation plate is detachably connected with the screw plug.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111214784.4A CN114150368B (en) | 2021-10-19 | 2021-10-19 | Material melting device and application method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111214784.4A CN114150368B (en) | 2021-10-19 | 2021-10-19 | Material melting device and application method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114150368A CN114150368A (en) | 2022-03-08 |
| CN114150368B true CN114150368B (en) | 2024-02-20 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111214784.4A Active CN114150368B (en) | 2021-10-19 | 2021-10-19 | Material melting device and application method thereof |
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| CN114808115B (en) * | 2022-04-28 | 2023-08-15 | 晶科能源股份有限公司 | Liquid mouth distance measuring method and liquid mouth distance testing device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004292288A (en) * | 2003-03-28 | 2004-10-21 | Sumitomo Mitsubishi Silicon Corp | Method for melting raw material for silicon single crystal |
| CN213327923U (en) * | 2020-08-20 | 2021-06-01 | 新疆晶科能源有限公司 | Water cooling screen structure of single crystal furnace |
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2021
- 2021-10-19 CN CN202111214784.4A patent/CN114150368B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004292288A (en) * | 2003-03-28 | 2004-10-21 | Sumitomo Mitsubishi Silicon Corp | Method for melting raw material for silicon single crystal |
| CN213327923U (en) * | 2020-08-20 | 2021-06-01 | 新疆晶科能源有限公司 | Water cooling screen structure of single crystal furnace |
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| CN114150368A (en) | 2022-03-08 |
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