CN114050190A - 双面钝化接触电池及其制备方法 - Google Patents
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Abstract
本发明公开了一种双面钝化接触电池,其正面和背面分别由内至外依次设置隧穿层、掺杂poly层、钝化层;且正面和背面的掺杂poly层,其中一个为硼和碳共掺杂的poly层,另一个为磷和碳共掺杂的poly层。本发明还提供上述双面钝化接触电池的制备方法。本发明通过元素共掺杂改性poly,增加poly的禁带宽度,在保证钝化性能的同时,提高钝化层的透光性,提升电流。
Description
技术领域
本发明涉及光伏领域,具体涉及一种双面钝化接触电池及其制备方法。
背景技术
隧穿氧化层钝化接触(TOPCon)是一种用于晶硅太阳能电池的钝化结构,其由一层超薄的氧化硅和一层重掺杂的多晶硅组成,主要用于电池背表面的钝化,可以实现优异的表面钝化和载流子的选择性收集。但目前这种电池的正面仍然是金属半导体接触,金属半导体接触处的复合损失限制了电池效率的进一步提升。为了进一步提升电池的转换效率,电池正面也需采用钝化接触结构,然而电池正面不仅要有优异的钝化能力,还应有良好的光学透光性,需避免因寄生吸收而造成效率的损失。
发明内容
本发明的目的在于提供一种双面钝化接触电池及其制备方法,通过元素共掺杂改性poly,增加poly的禁带宽度,在保证钝化性能的同时,提高钝化层的透光性,提升电流。
为实现上述目的,本发明提供一种双面钝化接触电池,其正面和背面分别由内至外依次设置隧穿层、掺杂poly层、钝化层;且正面和背面的掺杂poly层,其中一个为硼和碳共掺杂的poly层,另一个为磷和碳共掺杂的poly层。
优选的,所述隧穿层为超薄氧化层。
优选的,所述超薄氧化层为氧化铝层或者二氧化硅层。
优选的,所述超薄氧化层的厚度为0.5~2.5nm(优选为1~2nm)。
优选的,所述掺杂poly层中碳掺杂的含量为1%~5%(优选为3%~4%)。
优选的,所述钝化层为SiNx层。
本发明还提供上述双面钝化接触电池的制备方法,包括如下步骤:硅片制绒后,在硅片正面和背面分别制备隧穿层,然后在硅片正面和背面分别制备碳掺杂的poly层,然后对正面poly层和背面poly层中的一个进行硼掺杂、另一个进行磷掺杂,然后在硅片正面和背面分别制备钝化层,然后在硅片正面和背面分别印刷电极。
优选的,采用PECVD或LPCVD工艺制备碳掺杂的poly层。
优选的,碳掺杂采用甲烷(CH4)作为碳源。
优选的,硅片采用N型硅片;对正面poly层进行硼掺杂,对背面poly层进行磷掺杂;制备的双面钝化接触电池为N型双面钝化接触电池。
本发明的优点和有益效果在于:提供一种双面钝化接触电池及其制备方法,本发明通过元素共掺杂改性poly,增加poly层的禁带宽度,在保证钝化性能的同时,提高钝化层的透光性,提升电流。
本发明采用双面共掺杂钝化层+隧穿层的钝化接触结构,可以极大的减少电池表面的载流子复合,提升电池开压;且利用CH4做碳源,还可提高钝化界面H含量,提升钝化效果,最高Ivoc可达750mv;而且通过碳掺杂增加poly层的带隙宽度,采用宽带隙的改性poly作为正背面钝化材料,减少了红外寄生损失吸收,提升了电池电流,从而大幅度的提升了太阳能电池效率。
本发明将超薄氧化层的厚度控制在0.5~2.5nm,更优为控制在1~2nm,以免超薄氧化层太薄或太厚;超薄氧化层太薄则钝化效果较弱;超薄氧化层太厚则会影响隧穿效果,从而影响钝化效果。
本发明将poly层中碳掺杂的含量控制在1%~5%,更优为控制在3%~4%,以免碳掺杂含量过小或过大;碳掺杂含量过小,则poly层带隙宽度增加较小,钝化和电流提升较小;碳掺杂含量过大,则影响接触电阻,从而减低FF。
本发明掺杂碳可以采用PECVD或LPCVD工艺,使用甲烷(CH4)作为碳源,后续可印刷高温浆料,或者利用ITO和低温浆料,减小横向电阻,提升FF。
具体实施方式
下面结合实施例,对本发明的具体实施方式作进一步描述。以下实施例仅用于更加清楚地说明本发明的技术方案,而不能以此来限制本发明的保护范围。
本发明提供一种N型双面钝化接触电池,其正面和背面分别由内至外依次设置隧穿层、掺杂poly层、钝化层;
所述隧穿层为超薄氧化层,超薄氧化层可以采用氧化铝层或者二氧化硅层,超薄氧化层的厚度为0.5~2.5nm(优选为1~2nm);
所述掺杂poly层中碳掺杂的含量为1%~5%(优选为3%~4%);
正面的掺杂poly层为硼和碳共掺杂的poly层;
背面的掺杂poly层为磷和碳共掺杂的poly层;
所述钝化层为SiNx层。
本发明还提供上述N型双面钝化接触电池的制备方法,包括如下步骤:N型硅片制绒后,在硅片正面和背面分别制备隧穿层;然后在硅片正面和背面分别制备碳掺杂的poly层;然后对正面poly层进行硼掺杂,并对背面poly层进行磷掺杂;然后在硅片正面和背面分别制备钝化层;然后在硅片正面和背面分别印刷电极。
更具体的:可以采用PECVD或LPCVD工艺制备碳掺杂的poly层,且碳掺杂可以采用甲烷(CH4)作为碳源。
本发明的具体实施例如下:
实施例1
N型硅片制绒后,在硅片正面和背面分别制备厚度为1.2nm的氧化硅作为隧穿层;然后在硅片正面和背面分别制备碳掺杂的poly层,且poly层中碳掺杂的含量为1%;然后对正面poly层进行硼掺杂,并对背面poly层进行磷掺杂;然后在硅片正面和背面分别制备SiNx层作为钝化层;然后在硅片正面和背面分别印刷电极;最终制得N型双面钝化接触电池。
实施例2
N型硅片制绒后,在硅片正面和背面分别制备厚度为1.2nm的氧化硅作为隧穿层;然后在硅片正面和背面分别制备碳掺杂的poly层,且poly层中碳掺杂的含量为3%;然后对正面poly层进行硼掺杂,并对背面poly层进行磷掺杂;然后在硅片正面和背面分别制备SiNx层作为钝化层;然后在硅片正面和背面分别印刷电极;最终制得N型双面钝化接触电池。
实施例3
N型硅片制绒后,在硅片正面和背面分别制备厚度为1.2nm的氧化硅作为隧穿层;然后在硅片正面和背面分别制备碳掺杂的poly层,且poly层中碳掺杂的含量为10%;然后对正面poly层进行硼掺杂,并对背面poly层进行磷掺杂;然后在硅片正面和背面分别制备SiNx层作为钝化层;然后在硅片正面和背面分别印刷电极;最终制得N型双面钝化接触电池。
对比例1
N型硅片制绒后,在硅片正面进行硼掺杂,在硅片背面制备厚度为1.2nm的氧化硅作为隧穿层;然后在氧化硅上沉积poly层,并对背面poly层进行磷掺杂;然后在硅片正面和背面分别制备SiNx层作为钝化层;然后在硅片正面和背面分别印刷电极;最终制得N型双面钝化接触电池。
对各实施例和对比例1所制得的N型双面钝化接触电池进行性能测试,并将各实施例的性能数据与对比例1的性能数据进行比较;以对比例1的性能数据作为对比基数,实施例性能数据与对比例1性能数据的差异见下表:
通过上述对比可知:
相较于对比例1,实施例1在硅片正面沉积了隧穿氧化层叠加硼碳共掺poly层作为钝化层,碳元素掺杂量1%;正面沉积的隧穿氧化层叠加硼碳共掺poly层可有效提升开压和填充因子,但由于碳掺杂量较少,电流密度损失较大,电池效率总体提升不明显。
相较于对比例1,实施例2在硅片正面沉积了隧穿氧化层叠加硼碳共掺poly层作为钝化层,碳元素掺杂量3%;正面沉积的隧穿氧化层叠加硼碳共掺poly层可有效提升开压,碳掺杂量合适,电流密度也随之提升,电池效率大幅提升。
相较于对比例1,实施例3在硅片正面沉积了隧穿氧化层叠加硼碳共掺poly层作为钝化层,碳元素掺杂量10%;正面沉积的隧穿氧化层叠加硼碳共掺poly层可有效提升开压和电流密度,但由于碳掺杂量过高,导致横向电阻变大,FF大幅降低,电池效率提升不明显。
综上可知,相比较对比例1,本发明创新性地在硅片正面制备了隧穿氧化层叠加硼碳共掺poly层作为钝化层,并同时对硅片背面掺磷poly也进行了掺碳改性;正面制备的隧穿氧化层叠加硼碳共掺poly层可以有效的钝化接触区的缺陷,从而大幅提升Uoc和FF;同时,碳元素的掺杂也减少了poly对光的吸收,提升了电流,进而大幅提升电池效率。
以上所述仅是本发明的优选实施方式,应当指出,对于本技术领域的普通技术人员来说,在不脱离本发明技术原理的前提下,还可以做出若干改进和润饰,这些改进和润饰也应视为本发明的保护范围。
Claims (10)
1.双面钝化接触电池,其特征在于,其正面和背面分别由内至外依次设置隧穿层、掺杂poly层、钝化层;且正面和背面的掺杂poly层,其中一个为硼和碳共掺杂的poly层,另一个为磷和碳共掺杂的poly层。
2.根据权利要求1所述的双面钝化接触电池,其特征在于,所述隧穿层为超薄氧化层。
3.根据权利要求2所述的双面钝化接触电池,其特征在于,所述超薄氧化层为氧化铝层或者二氧化硅层。
4.根据权利要求2所述的双面钝化接触电池,其特征在于,所述超薄氧化层的厚度为0.5~2.5nm。
5.根据权利要求1所述的双面钝化接触电池,其特征在于,所述掺杂poly层中碳掺杂的含量为1%~5%。
6.根据权利要求1所述的双面钝化接触电池,其特征在于,所述钝化层为SiNx层。
7.权利要求1至6中任一项所述双面钝化接触电池的制备方法,其特征在于,包括如下步骤:硅片制绒后,在硅片正面和背面分别制备隧穿层,然后在硅片正面和背面分别制备碳掺杂的poly层,然后对正面poly层和背面poly层中的一个进行硼掺杂、另一个进行磷掺杂,然后在硅片正面和背面分别制备钝化层,然后在硅片正面和背面分别印刷电极。
8.根据权利要求7所述的双面钝化接触电池的制备方法,其特征在于,采用PECVD或LPCVD工艺制备碳掺杂的poly层。
9.根据权利要求7所述的双面钝化接触电池的制备方法,其特征在于,碳掺杂采用甲烷作为碳源。
10.根据权利要求7所述的双面钝化接触电池的制备方法,其特征在于,硅片采用N型硅片;对正面poly层进行硼掺杂,对背面poly层进行磷掺杂;制备的双面钝化接触电池为N型双面钝化接触电池。
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023087879A1 (zh) * | 2021-11-19 | 2023-05-25 | 常州时创能源股份有限公司 | 双面钝化接触电池及其制备方法 |
CN116960231A (zh) * | 2023-09-21 | 2023-10-27 | 常州亿晶光电科技有限公司 | 一种高透光性双面TOPCon电池的制备方法 |
Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4968384A (en) * | 1988-09-29 | 1990-11-06 | Fuji Electric Corporate Research And Development Ltd. | Method of producing carbon-doped amorphous silicon thin film |
DE102006046726A1 (de) * | 2006-10-02 | 2008-04-03 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Solarzelle mit strukturierter Rückseitenpassivierungsschicht aus SIOx und SINx sowie Verfahren zur Herstellung |
US20110108100A1 (en) * | 2009-11-12 | 2011-05-12 | Sierra Solar Power, Inc. | Aluminum grid as backside conductor on epitaxial silicon thin film solar cells |
CN102194897A (zh) * | 2011-06-01 | 2011-09-21 | 奥特斯维能源(太仓)有限公司 | 掺杂碳化硅薄膜诱导背场的双面钝化太阳电池及制备方法 |
US20110272010A1 (en) * | 2010-05-10 | 2011-11-10 | International Business Machines Corporation | High work function metal interfacial films for improving fill factor in solar cells |
US20120012167A1 (en) * | 2010-07-13 | 2012-01-19 | International Business Machines Corporation | Solar cell employing an enhanced free hole density p-doped material and methods for forming the same |
CN109786476A (zh) * | 2018-12-27 | 2019-05-21 | 中国科学院宁波材料技术与工程研究所 | 一种钝化接触结构及其在硅太阳电池中应用 |
CN111628052A (zh) * | 2020-07-13 | 2020-09-04 | 苏州腾晖光伏技术有限公司 | 一种钝化接触电池的制备方法 |
US20200286734A1 (en) * | 2019-03-08 | 2020-09-10 | SK Hynix Inc. | Semiconductor device and method for fabricating the same |
CN112164728A (zh) * | 2020-10-29 | 2021-01-01 | 天合光能股份有限公司 | 图形化的钝化接触太阳能电池及其制造方法 |
CN113345969A (zh) * | 2021-04-28 | 2021-09-03 | 中国科学院宁波材料技术与工程研究所 | 钝化接触结构及其制备方法和应用 |
CN113471321A (zh) * | 2021-07-23 | 2021-10-01 | 常州时创能源股份有限公司 | 一种TOPCon太阳能电池及制造方法 |
CN214753785U (zh) * | 2021-06-18 | 2021-11-16 | 天合光能股份有限公司 | 一种单面钝化接触的太阳能电池 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103035757B (zh) * | 2012-12-05 | 2016-04-13 | 保定风帆光伏能源有限公司 | 一种薄膜太阳能电池及p型半导体和p型半导体的制备方法 |
CN109216498A (zh) * | 2017-06-29 | 2019-01-15 | 上海神舟新能源发展有限公司 | 一种双面隧穿氧化钝化高效n型双面电池的制备方法 |
CN108807565B (zh) * | 2018-07-13 | 2024-04-16 | 苏州太阳井新能源有限公司 | 一种钝化接触电极结构,其适用的太阳能电池及制作方法 |
CN208806263U (zh) * | 2018-07-13 | 2019-04-30 | 苏州太阳井新能源有限公司 | 一种钝化接触电极结构及其适用的太阳能电池 |
CN111477720A (zh) * | 2019-10-22 | 2020-07-31 | 国家电投集团西安太阳能电力有限公司 | 一种钝化接触的n型背结太阳能电池及其制备方法 |
CN111416017B (zh) * | 2020-03-26 | 2023-03-24 | 泰州中来光电科技有限公司 | 一种钝化接触太阳电池制备方法 |
CN113594295B (zh) * | 2021-07-23 | 2024-03-08 | 深圳黑晶光电技术有限公司 | 一种双面钝化结构的太阳能电池制备方法 |
CN114050190B (zh) * | 2021-11-19 | 2024-02-13 | 常州时创能源股份有限公司 | 双面钝化接触电池及其制备方法 |
-
2021
- 2021-11-19 CN CN202111374547.4A patent/CN114050190B/zh active Active
-
2022
- 2022-09-15 KR KR1020247016454A patent/KR20240090480A/ko active Search and Examination
- 2022-09-15 WO PCT/CN2022/118909 patent/WO2023087879A1/zh active Application Filing
- 2022-09-15 DE DE112022004432.2T patent/DE112022004432T5/de active Pending
Patent Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4968384A (en) * | 1988-09-29 | 1990-11-06 | Fuji Electric Corporate Research And Development Ltd. | Method of producing carbon-doped amorphous silicon thin film |
DE102006046726A1 (de) * | 2006-10-02 | 2008-04-03 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Solarzelle mit strukturierter Rückseitenpassivierungsschicht aus SIOx und SINx sowie Verfahren zur Herstellung |
US20110108100A1 (en) * | 2009-11-12 | 2011-05-12 | Sierra Solar Power, Inc. | Aluminum grid as backside conductor on epitaxial silicon thin film solar cells |
US20110272010A1 (en) * | 2010-05-10 | 2011-11-10 | International Business Machines Corporation | High work function metal interfacial films for improving fill factor in solar cells |
US20120012167A1 (en) * | 2010-07-13 | 2012-01-19 | International Business Machines Corporation | Solar cell employing an enhanced free hole density p-doped material and methods for forming the same |
CN102194897A (zh) * | 2011-06-01 | 2011-09-21 | 奥特斯维能源(太仓)有限公司 | 掺杂碳化硅薄膜诱导背场的双面钝化太阳电池及制备方法 |
CN109786476A (zh) * | 2018-12-27 | 2019-05-21 | 中国科学院宁波材料技术与工程研究所 | 一种钝化接触结构及其在硅太阳电池中应用 |
US20200286734A1 (en) * | 2019-03-08 | 2020-09-10 | SK Hynix Inc. | Semiconductor device and method for fabricating the same |
CN111668095A (zh) * | 2019-03-08 | 2020-09-15 | 爱思开海力士有限公司 | 半导体器件及其制造方法 |
CN111628052A (zh) * | 2020-07-13 | 2020-09-04 | 苏州腾晖光伏技术有限公司 | 一种钝化接触电池的制备方法 |
CN112164728A (zh) * | 2020-10-29 | 2021-01-01 | 天合光能股份有限公司 | 图形化的钝化接触太阳能电池及其制造方法 |
CN113345969A (zh) * | 2021-04-28 | 2021-09-03 | 中国科学院宁波材料技术与工程研究所 | 钝化接触结构及其制备方法和应用 |
CN214753785U (zh) * | 2021-06-18 | 2021-11-16 | 天合光能股份有限公司 | 一种单面钝化接触的太阳能电池 |
CN113471321A (zh) * | 2021-07-23 | 2021-10-01 | 常州时创能源股份有限公司 | 一种TOPCon太阳能电池及制造方法 |
Non-Patent Citations (4)
Title |
---|
PHAM, DP ET AL: "Innovative passivating contact using quantum well at poly-Si/c-Si interface for crystalline silicon solar cells", 《CHEMICAL ENGINEERING JOURNAL》, vol. 423, pages 1 - 7 * |
王利;张晓丹;杨旭;魏长春;张德坤;王广才;孙建;赵颖;: "非晶硅太阳电池BZO/p-a-SiC:H接触特性改善的研究", 《物理学报》, no. 05, pages 1 - 6 * |
王利;张晓丹;杨旭;魏长春;张德坤;王广才;孙建;赵颖;: "非晶硅太阳电池BZO/p-a-SiC:H接触特性改善的研究", 物理学报, no. 05 * |
蔡宏琨;陶科;赵敬芳;胡居涛;张德贤;: "P型微晶硅碳的性能研究及其在柔性衬底太阳电池中的应用", 《太阳能学报》, no. 11, pages 1841 - 1844 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023087879A1 (zh) * | 2021-11-19 | 2023-05-25 | 常州时创能源股份有限公司 | 双面钝化接触电池及其制备方法 |
CN116960231A (zh) * | 2023-09-21 | 2023-10-27 | 常州亿晶光电科技有限公司 | 一种高透光性双面TOPCon电池的制备方法 |
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