CN114047230A - Gas-sensitive nanomaterial with branched nanowire structure, preparation method and application thereof - Google Patents
Gas-sensitive nanomaterial with branched nanowire structure, preparation method and application thereof Download PDFInfo
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- 239000002070 nanowire Substances 0.000 title claims abstract description 93
- 239000002086 nanomaterial Substances 0.000 title claims abstract description 35
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 239000010955 niobium Substances 0.000 claims abstract description 87
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 52
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims abstract description 52
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 239000000243 solution Substances 0.000 claims abstract description 23
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000008367 deionised water Substances 0.000 claims abstract description 19
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 19
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Inorganic materials O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000000725 suspension Substances 0.000 claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 claims abstract description 15
- 239000010453 quartz Substances 0.000 claims abstract description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000000231 atomic layer deposition Methods 0.000 claims abstract description 8
- 238000002156 mixing Methods 0.000 claims abstract description 8
- 239000011259 mixed solution Substances 0.000 claims abstract description 5
- 239000011248 coating agent Substances 0.000 claims abstract description 4
- 238000000576 coating method Methods 0.000 claims abstract description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 107
- 239000011787 zinc oxide Substances 0.000 claims description 58
- 239000007789 gas Substances 0.000 claims description 49
- 238000000034 method Methods 0.000 claims description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 16
- 239000011258 core-shell material Substances 0.000 claims description 15
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 11
- 238000004140 cleaning Methods 0.000 claims description 9
- 229910000484 niobium oxide Inorganic materials 0.000 claims description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 claims description 7
- 229910000037 hydrogen sulfide Inorganic materials 0.000 claims description 7
- 239000011701 zinc Substances 0.000 claims description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 description 17
- 239000004065 semiconductor Substances 0.000 description 9
- 238000012876 topography Methods 0.000 description 7
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
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- 229910052760 oxygen Inorganic materials 0.000 description 4
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- 150000004706 metal oxides Chemical class 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
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- 238000010438 heat treatment Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
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- 238000005036 potential barrier Methods 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 230000002195 synergetic effect Effects 0.000 description 2
- 238000000861 blow drying Methods 0.000 description 1
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- 238000013329 compounding Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000004868 gas analysis Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
- G01N27/125—Composition of the body, e.g. the composition of its sensitive layer
- G01N27/127—Composition of the body, e.g. the composition of its sensitive layer comprising nanoparticles
Abstract
The invention provides a preparation method of a gas-sensitive nano material with a branched nanowire structure, which comprises the following steps: supply of NH4A solution of F; putting the metal niobium sheet into the solution for nanowire growth, and growing Nb on the surface of the niobium sheet2O5A nanowire; growing Nb using atomic layer deposition2O5Preparing a ZnO shell layer film on the surface of the niobium sheet of the nanowire; providing 6.25 to 25mM of Zn (NO)3)2And 6.25-25 mM of HMT; coating the surface with ZnO and Nb2O5Placing the niobium sheet of the nanowire in the mixed solution, and growing a ZnO branched nanowire on the surface of the niobium sheet of the nanowire in a branched manner; mixing Nb with2O5Transferring and dispersing the-ZnO branched nanowire from the niobium sheet substrate into deionized water to obtain Nb2O5-a ZnO branched nanowire suspension; then the obtained suspension is dropped on a quartz chip substrate, dried and cooled to obtain Nb2O5-gas-sensitive nanomaterials of ZnO branched nanowire structure.
Description
Technical Field
The invention relates to the technical field of semiconductor nano material preparation, in particular to a gas-sensitive nano material with a branched nanowire structure, a preparation method and application thereof.
Background
In recent years, a resistance type gas sensor based on a semiconductor nanomaterial has received great attention, and has been widely used in various fields such as gas leakage alarm, environmental gas monitoring, and industrial gas analysis. The development of various novel gas sensors based on metal oxide semiconductor materials, which have high specific surface area, excellent gas adsorption capacity and high carrier mobility, has become a current research hotspot.
Disclosure of Invention
The invention aims to solve the technical problem of providing a gas-sensitive nanomaterial with a branched nanowire structure, which has better gas adsorption capacity and high carrier mobility, and a preparation method and application thereof.
In order to solve the above problems, the present invention provides a method for preparing a gas-sensitive nanomaterial with a branched nanowire structure, comprising the following steps: supply of NH4A solution of F; putting the metal niobium sheet into the solution for nanowire growth, and growing Nb on the surface of the niobium sheet2O5A nanowire; growing Nb using atomic layer deposition2O5Preparing a ZnO shell layer film on the surface of the niobium sheet of the nanowire; providing 6.25 to 25mM of Zn (NO)3)2And 6.25-25 mM of HMT; coating the surface with ZnO and Nb2O5Placing the niobium sheet of the nanowire in the mixed solution, and growing a ZnO branched nanowire on the surface of the niobium sheet of the nanowire in a branched manner; mixing Nb with2O5Transferring and dispersing the-ZnO branched nanowire from the niobium sheet substrate into deionized water to obtain Nb2O5-a ZnO branched nanowire suspension; then the obtained suspension is dropped on a quartz chip substrate, dried and cooled to obtain Nb2O5-gas-sensitive nanomaterials of ZnO branched nanowire structure.
The invention provides a Nb-based alloy prepared by the preparation method2O5-gas-sensitive nanomaterial of ZnO core-shell branched nanowire structure.
The invention provides a method for manufacturing the same based on Nb2O5Application of the gas-sensitive nanomaterial with the ZnO core-shell branched nanowire structure in detecting hydrogen sulfide gas.
Among various metal oxide semiconductor materials, niobium pentoxide (Nb)2O5) Is aThe important n-type oxide wide-bandgap (about 3.4eV) semiconductor has good conductivity and high concentration of oxygen vacancy, is favorable for capturing electrons, and is based on Nb2O5Is worthy of study. The gas sensor based on a single niobium oxide material has relatively poor gas sensing performance. Thus, the preparation of composite structural materials has attracted extensive research interest and is generally recognized as an effective method for improving the performance of gas sensors. The core-shell heterostructure composed of two or more semiconductor materials is constructed, so that not only can a synergistic effect of various characteristics of various materials be generated, but also additional depletion width and change of an interface potential barrier are increased due to electron capture of an interface state and formation of a heterojunction, and therefore, larger sensor response is brought than that of an original nanostructure. In addition, the construction of the hierarchical structure, such as branched nano-wires, is beneficial to the increase of the specific surface area and the formation of more heterojunctions or homojunctions on the interfaces among the multi-stage nano-structures, and further improves the response of the sensor.
Drawings
FIG. 1 is a schematic diagram illustrating the steps of the method of this embodiment.
FIG. 2 shows Nb in the first embodiment2O5And (4) a scanning electron microscope topography of the nanowire.
FIG. 3 is a scanning electron microscope topography of the ZnO shell film in the first embodiment.
FIG. 4 is a scanning electron microscope topography of the ZnO nanowire of the first embodiment.
FIG. 5 is a scanning electron microscope topography of the ZnO nanowire of the second embodiment.
Fig. 6 shows the results of comparative tests of gas sensitivity of different materials using the solution described in this embodiment.
Detailed Description
The following detailed description of the gas-sensitive nanomaterial with branched nanowire structure, the preparation method and the application thereof provided by the invention are provided with reference to the accompanying drawings.
FIG. 1 is a schematic diagram illustrating the steps of the method according to this embodiment, including: step by stepStep S10, providing NH4A solution of F; step S11, the metal niobium sheet is placed in the solution for nanowire growth, and Nb grows on the surface of the niobium sheet2O5A nanowire; step S12, growing Nb by using atomic layer deposition technique2O5Preparing a ZnO shell layer film on the surface of the niobium sheet of the nanowire; step S13, providing Zn (NO) of 6.25-25 mM3)2And 6.25-25 mM of HMT; step S14, coating ZnO and Nb on the surface2O5Placing the niobium sheet of the nanowire in the mixed solution, and growing a ZnO branched nanowire on the surface of the niobium sheet of the nanowire in a branched manner; step S15, adding Nb2O5Transferring and dispersing the-ZnO branched nanowire from the niobium sheet substrate into deionized water to obtain Nb2O5-a ZnO branched nanowire suspension; step S16, the obtained suspension is dropped on a quartz chip substrate, dried and cooled to obtain Nb2O5-gas-sensitive nanomaterials of ZnO branched nanowire structure.
Specifically, in the above step S10, NH4NH in solution of F4The concentration of F is 0.03-0.06 mol/L. In step S11, the niobium metal sheets are placed in parallel on NH4F in solution. Before the step S11, the method further comprises a step of cleaning the metal niobium sheet, and specifically comprises a step of cleaning each ultrasonic cleaning by using absolute ethyl alcohol and deionized water in sequence for 10-15 min, and then drying by using nitrogen. Nb in step S112O5The length of the nanowire is 700-1100 nm, and the diameter of the nanowire is 40-60 nm.
In step S13, Zn (NO) is supplied in an amount of 6.25 to 25mM3)2And 6.25-25 mM of HMT, wherein the mixing ratio is 1: 1.
and step S15, namely obtaining a suspension, further performing ultrasonic separation on the ZnO branched nanowires from the niobium sheet substrate, and uniformly dispersing the ZnO branched nanowires in deionized water. The ZnO branched nanowire has a length of 80-150 nm and a diameter of 15-40 nm.
Step S16, the step of preparing the gas-sensitive nano material is further that the obtained suspension with the mass-volume ratio of 1-5 mg/ml is dropped on a quartz plate substrate which is cleaned in a standard way, and the suspension is baked in the air at the temperature of 50-80 ℃ until the suspension is completely dried; and naturally cooling to room temperature to obtain the gas-sensitive nanomaterial with the niobium oxide/zinc oxide core-shell branched nanowire structure.
Based on Nb in the technical scheme2O5the-ZnO core-shell branched nanowire structure is a gas-sensitive nanomaterial and has application properties in the aspect of detecting hydrogen sulfide gas.
Two examples of the above solution are given below.
Example 1
A preparation process of a gas-sensitive nanomaterial based on an n-n junction niobium oxide/zinc oxide core-shell branched nanowire structure comprises the following steps:
(1) a metal niobium sheet with the size of 2.0cm multiplied by 2.0cm is taken as a substrate and a source material, sequentially soaked in absolute ethyl alcohol and deionized water, respectively ultrasonically cleaned for 10min, and dried by high-purity nitrogen at room temperature.
(2) Preparation of NH4A solution having a F concentration of 0.045mol/L was used as a reaction solution.
(3) Putting the cleaned and dried metal niobium sheet as a substrate and a source material in parallel in a solution, growing for 6 hours at 200 ℃, taking out the niobium sheet after the growth is finished, cleaning with deionized water, blowing the niobium sheet with high-purity nitrogen at room temperature, and growing Nb with the average length of 1 mu m and the average diameter of 50nm on the surface of the niobium sheet2O5Nanowire (shown as Nb in FIG. 2)2O5Scanning electron microscope topography of nanowires).
(4) Will grow Nb2O5Putting a niobium sheet of the nanowire into a BENEQ TFS-200ALD reaction chamber, preparing a ZnO shell layer film by adopting an atomic layer deposition technology, wherein the reaction temperature is set to be 200 ℃, diethyl zinc (DEZ) is selected as a tin source, deionized water is used as an oxygen source, heating is not needed, and the number of growth cycles is set to be 100cycles, wherein the growth process of each cycle comprises 0.2s DEZ pulse, 10s N2(g) Purge, 0.2s pulse of deionized water and 10s N2(g) Purging, and obtaining the ZnO shell layer film with the thickness of 20nm (as shown in figure 3, a scanning electron microscope appearance image of the ZnO shell layer film).
(5) 12.5mM Zn (NO) was prepared3)2And 12.5mM HMT, in a 1: 1 mixAnd (4) compounding.
(6) Growing the sample prepared by atomic layer deposition, namely the Nb coated with ZnO2O5And putting the niobium sheet of the nanowire serving as a substrate in parallel in the solution, growing for 5 hours at 80 ℃, taking out the niobium sheet after the growth is finished, cleaning with deionized water, and drying with high-purity nitrogen at room temperature. ZnO nanowires with the average length of 130nm and the average diameter of 20nm are grown on the surface of the niobium sheet in a branching manner (as shown in a scanning electron microscope topography of the ZnO nanowires in figure 4);
mixing Nb with2O5Ultrasonically separating the ZnO branched nanowires from the niobium sheet substrate, uniformly dispersing the ZnO branched nanowires in deionized water, dripping the obtained suspension on a standard cleaned quartz sheet substrate, and baking the quartz sheet substrate in air at the temperature of 50-80 ℃ until the quartz sheet substrate is completely dried; naturally cooling to room temperature to obtain the white gas-sensitive nanomaterial with the niobium oxide/zinc oxide core-shell branched nanowire structure, wherein the average length of the gas-sensitive nanomaterial is 400nm, and the average diameter of the gas-sensitive nanomaterial is 90nm (the thickness of a shell layer is 20 nm).
Example 2
A preparation process of a gas-sensitive nanomaterial based on an n-n junction niobium oxide/zinc oxide core-shell branched nanowire structure comprises the following steps:
(1) a metal niobium sheet with the size of 2.0cm multiplied by 2.0cm is taken as a substrate and a source material, sequentially soaked in absolute ethyl alcohol and deionized water, respectively ultrasonically cleaned for 10min, and dried by high-purity nitrogen at room temperature.
(2) Preparation of NH4A solution having a F concentration of 0.045mol/L was used as a reaction solution.
(3) Putting the cleaned and dried metal niobium sheet as a substrate and a source material in parallel in a solution, growing for 6 hours at 200 ℃, taking out the niobium sheet after the growth is finished, cleaning with deionized water, blow-drying with high-purity nitrogen at room temperature, and growing Nb with the average length of 900nm and the average diameter of 50nm on the surface of the niobium sheet2O5A nanowire.
(4) Will grow Nb2O5Putting the niobium sheet of the nanowire into a BENEQ TFS-200ALD reaction chamber, preparing a ZnO shell layer film by adopting an atomic layer deposition technology, wherein the reaction temperature is set to be 200 ℃, and (diethyl zinc) DEZ is selected as a tin source to removeIonized water as oxygen source, no heating, and 100cycles of growth, wherein each cycle of growth comprises 0.2s DEZ pulse, 10s N2(g) Purge, 0.2s pulse of deionized water and 10s N2(g) Purging to obtain the ZnO shell layer film with the thickness of 20 nm.
(5) 25mM Zn (NO) was prepared3)2And 25mM HMT, as 1: 1, mixing and preparing.
(7) Growing the sample prepared by atomic layer deposition, namely the Nb coated with ZnO2O5And putting the niobium sheet of the nanowire serving as a substrate in parallel in the solution, growing for 3 hours at 80 ℃, taking out the niobium sheet after the growth is finished, cleaning with deionized water, and drying with high-purity nitrogen at room temperature. ZnO nanowires with the average length of 200nm and the average diameter of 30nm are grown on the surface of the niobium sheet in a branching manner (as shown in a scanning electron microscope topography of the ZnO nanowires in figure 5);
mixing Nb with2O5Ultrasonically separating the ZnO branched nanowires from the niobium sheet substrate, uniformly dispersing the ZnO branched nanowires in deionized water, dripping the obtained suspension on a standard cleaned quartz sheet substrate, and baking the quartz sheet substrate in air at the temperature of 50-80 ℃ until the quartz sheet substrate is completely dried; naturally cooling to room temperature to obtain the white gas-sensitive nanomaterial with the niobium oxide/zinc oxide core-shell branched nanowire structure, wherein the average length of the gas-sensitive nanomaterial is 350nm, and the average diameter of the gas-sensitive nanomaterial is 90nm (the thickness of a shell layer is 20 nm).
And carrying out gas sensing test on 10-4 ppm hydrogen sulfide gas by using the obtained niobium oxide/zinc oxide core-shell branched nano-wire. For 10ppm of hydrogen sulfide gas, Nb2O5The sensitivity (defined as responsivity-1) of ZnO (branched) nanowires was 1.25, while pure Nb2O5Sensitivity of nanowire 1.06, Nb2O5The sensitivity of the-ZnO (unbranched) nanowire is 1.19, and the core-shell branched nanowire structure of the invention has the sensing sensitivity to 10ppm hydrogen sulfide gas compared with pure Nb2O5The nano wire is improved by 18 percent compared with Nb2O5The ZnO (unbranched) nanowire is improved by 5%, and the sensitivity of the ZnO (unbranched) nanowire to hydrogen sulfide gas at other concentrations is improved to different degrees. As shown in fig. 6, different materialsThe result of the gas sensitivity comparison test shows that the material provided by the technical scheme has more sensitive gas-sensitive performance.
As can be seen from the above technical solutions, among various metal oxide semiconductor materials, niobium pentoxide (Nb)2O5) Is an important n-type oxide wide-bandgap (about 3.4eV) semiconductor, has good conductivity and high concentration of oxygen vacancies, is favorable for capturing electrons, and is based on Nb2O5Is worthy of study. The gas sensor based on a single niobium oxide material has relatively poor gas sensing performance. Thus, the preparation of composite structural materials has attracted extensive research interest and is generally recognized as an effective method for improving the performance of gas sensors. The core-shell heterostructure composed of two or more semiconductor materials is constructed, so that not only can a synergistic effect of various characteristics of various materials be generated, but also additional depletion width and change of an interface potential barrier are increased due to electron capture of an interface state and formation of a heterojunction, and therefore, larger sensor response is brought than that of an original nanostructure. In addition, the construction of the hierarchical structure, such as branched nano-wires, is beneficial to the increase of the specific surface area and the formation of more heterojunctions or homojunctions on the interfaces among the multi-stage nano-structures, and further improves the response of the sensor.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (11)
1. A preparation method of a gas-sensitive nanomaterial with a branched nanowire structure is characterized by comprising the following steps:
supply of NH4A solution of F;
putting the metal niobium sheet into the solution for nanowire growth, and growing Nb on the surface of the niobium sheet2O5A nanowire;
growing Nb using atomic layer deposition2O5Surface preparation of niobium sheet of nanowirePreparing a ZnO shell layer film;
providing 6.25 to 25mM of Zn (NO)3)2And 6.25-25 mM of HMT;
coating the surface with ZnO and Nb2O5Placing the niobium sheet of the nanowire in the mixed solution, and growing a ZnO branched nanowire on the surface of the niobium sheet of the nanowire in a branched manner;
mixing Nb with2O5Transferring and dispersing the-ZnO branched nanowire from the niobium sheet substrate into deionized water to obtain Nb2O5-a ZnO branched nanowire suspension;
then the obtained suspension is dropped on a quartz chip substrate, dried and cooled to obtain Nb2O5-gas-sensitive nanomaterials of ZnO branched nanowire structure.
2. The method of claim 1, wherein NH is4NH in solution of F4The concentration of F is 0.03-0.06 mol/L.
3. The method of claim 1, wherein the niobium metal sheet is a plurality of sheets placed in parallel with the NH4F in solution.
4. The method of claim 1, wherein 6.25 to 25mM Zn (NO) is provided3)2And 6.25-25 mM of HMT, wherein the mixing ratio of the mixed solution to the HMT is 1: 1.
5. the method of claim 1, wherein the step of obtaining the suspension further comprises ultrasonically separating the ZnO branched nanowires from the niobium sheet substrate to uniformly disperse the ZnO branched nanowires in deionized water.
6. The method of claim 1, wherein the gas-sensitive nanomaterial is further prepared by dropping the obtained suspension with a mass-to-volume ratio of 1-5 mg/ml onto a standard cleaned quartz plate substrate, and baking in air at a temperature of 50-80 ℃ until completely dried; and naturally cooling to room temperature to obtain the gas-sensitive nanomaterial with the niobium oxide/zinc oxide core-shell branched nanowire structure.
7. The method of claim 1, wherein before the step of growing the nanowires, the step of cleaning the niobium metal sheet further comprises a step of cleaning the niobium metal sheet, specifically, cleaning the niobium metal sheet with absolute ethanol and deionized water sequentially, performing ultrasonic cleaning for 10-15 min, and drying the niobium metal sheet with nitrogen.
8. The method of claim 1, wherein Nb2O5The length of the nanowire is 700-1100 nm, and the diameter of the nanowire is 40-60 nm.
9. The method according to claim 1, wherein in the step (5), the ZnO branched nanowires have a length of 80 to 150nm and a diameter of 15 to 40 nm.
10. Nb-based alloy obtained by the production method according to claim 12O5-gas-sensitive nanomaterial of ZnO core-shell branched nanowire structure.
11. An Nb-based as in claim 102O5Application of the gas-sensitive nanomaterial with the ZnO core-shell branched nanowire structure in detecting hydrogen sulfide gas.
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