CN114038924A - Back contact heterojunction solar cell based on RIE plasma etching texturing - Google Patents
Back contact heterojunction solar cell based on RIE plasma etching texturing Download PDFInfo
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- 238000001020 plasma etching Methods 0.000 title claims abstract description 74
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 33
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 32
- 238000002161 passivation Methods 0.000 claims abstract description 30
- 238000000034 method Methods 0.000 claims abstract description 23
- 229910052751 metal Inorganic materials 0.000 claims abstract description 10
- 239000002184 metal Substances 0.000 claims abstract description 10
- 238000002310 reflectometry Methods 0.000 claims abstract description 8
- 230000005641 tunneling Effects 0.000 claims abstract description 8
- 238000005516 engineering process Methods 0.000 claims description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- 229910004205 SiNX Inorganic materials 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 3
- 239000003513 alkali Substances 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 239000012495 reaction gas Substances 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 229910017107 AlOx Inorganic materials 0.000 claims description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 11
- 230000031700 light absorption Effects 0.000 abstract description 7
- 238000010521 absorption reaction Methods 0.000 abstract description 2
- 230000003287 optical effect Effects 0.000 abstract description 2
- 238000006243 chemical reaction Methods 0.000 description 5
- 229910015844 BCl3 Inorganic materials 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 229910052593 corundum Inorganic materials 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910021418 black silicon Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
- H01L31/022458—Electrode arrangements specially adapted for back-contact solar cells for emitter wrap-through [EWT] type solar cells, e.g. interdigitated emitter-base back-contacts
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Abstract
The invention relates to a back contact heterojunction solar cell based on RIE (reactive ion etching) texturing, which comprises a crystalline silicon substrate, wherein the front surface of the crystalline silicon substrate comprises at least one passivation layer, and the front surface forms an ultralow-reflectivity surface by an RIE plasma etching method; the back surface of the crystalline silicon substrate comprises a tunneling oxide layer, n + doped amorphous silicon layers/p + doped amorphous silicon layers which are arranged alternately, a laser grooving region, a passivation layer and a metal electrode from inside to outside. The invention has the advantages that: the growth mode of doped amorphous silicon is optimized, the optical absorption of the high-efficiency cell is further improved, the passivation capability of the cell is improved, and the method is suitable for forming a doped amorphous silicon passivation layer and manufacturing a front surface light absorption layer in an interdigital back contact heterojunction solar cell (HBC).
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a back contact heterojunction solar cell based on RIE (reactive ion etching) texturing.
Background
In recent years, the energy crisis and environmental pressure have promoted the rapid development of solar cell research and industry. Currently, crystalline silicon solar cells are the most mature and widely used solar cells in technology, have a percentage in the photovoltaic market of over 90%, and will dominate for a considerable time in the future. In the photovoltaic industry developing at a high speed, the improvement of the photoelectric conversion efficiency and the reduction of the manufacturing cost of the cell become the root of the whole photovoltaic industry, and with the continuous progress of the photovoltaic cell technology, more and more efficient solar cells enter the field of vision of people.
The photovoltaic leaders plan to continue to promote the progress of the photovoltaic technology in China, and the high-efficiency crystalline silicon technology becomes a development direction. Cost reduction and efficiency improvement are always the constant subjects of the photovoltaic industry, with the continuous technical progress and policy promotion of the industry, the attention of the public is gradually shifted to the electricity consumption cost, and the high-efficiency battery is attracted attention.
The HBC battery has high short-circuit current of the IBC battery and high open-circuit voltage of the HJT battery, the conversion efficiency of a laboratory reaches 26.63%, and the development potential of the HBC battery is proved. The front surface of the HBC battery structure is free of metal electrodes, the P, N layers on the back are orderly and regularly staggered, the series resistance Rs is greatly reduced, the metal electrodes which are in contact with P, N layers at intervals can form good ohmic contact, and short-circuit current is increased. In addition, the excellent intrinsic passivation layer can obtain a high open circuit voltage.
Disclosure of Invention
The invention aims to provide a back contact heterojunction solar cell based on RIE (reactive ion etching) texturing, so as to solve the problems in the background technology.
In order to solve the technical problems, the technical scheme provided by the invention is as follows: a back contact heterojunction solar cell based on RIE (reactive ion etching) texturing comprises a crystalline silicon substrate, wherein the front surface of the crystalline silicon substrate comprises at least one passivation layer, and the front surface forms an ultra-low reflectivity surface through an RIE (reactive ion etching) method; the back surface of the crystalline silicon substrate comprises a tunneling oxide layer, n + doped amorphous silicon layers/p + doped amorphous silicon layers which are arranged alternately, a laser grooving region, a passivation layer and a metal electrode from inside to outside.
Preferably, the crystalline silicon substrate is either an N-type monocrystalline silicon substrate or a P-type monocrystalline silicon substrate.
As a preferred scheme, the front surface of the crystalline silicon substrate is a texturing surface, and a RIE plasma etching method is adopted for texturing;
the process of preparing the needed suede by adopting the RIE plasma etching method comprises the following steps:
1) placing a silicon wafer in a carrying carrier for plasma etching, and sending the silicon wafer into a cavity of plasma etching equipment;
2) vacuumizing the device, maintaining the vacuum degree of the device at 100-2And 100-2Carrying out plasma etching for 1-100 min;
3) after the etching is finished, the reaction gas is closed, the equipment is vacuumized to be below 100mtorr, the equipment is kept for 1-5min, and then 1-10SLM N is introduced2So that the equipment reaches the normal pressure state;
4) and finishing the etching process and taking out the silicon wafer.
Preferably, the back surface of the crystalline silicon substrate is either an acid polished surface or an alkali polished surface.
As a preferable scheme, the passivation layer arranged on the front surface of the crystalline silicon substrate is SiO2、AlOx、SiNx、SiONxOne or a combination of several of them.
Preferably, the tunnel oxide layer on the back surface of the crystalline silicon substrate is formed by any one of atmospheric thermal oxidation and LPCVD thermal oxidation.
Preferably, the n + doped amorphous silicon layer/p + doped amorphous silicon layer arranged alternately is implemented by LPCVD doping technology, wherein the B doping utilizes BCl3Gaseous doping source implementation。
As a preferred scheme, the n + doped amorphous silicon layer and the p + doped amorphous silicon layer are alternately realized by adopting the mask and laser grooving technologies respectively.
Preferably, the passivation layer on the back surface of the crystalline silicon substrate is one or a combination of SiNx and SiONx.
As a preferable scheme, the metal electrode is silver paste.
The invention has the advantages that:
1) the solar cell adopts a cell structure combining a back contact mode and a heterojunction mode, optimizes a doped amorphous silicon growth mode, improves the passivation capacity and the contact capacity of the solar cell under the characteristic of reserving IBC high short-circuit current, and simultaneously effectively reduces the manufacturing cost. The verification proves that the efficiency of the mass production HBC battery adopting the structure of the invention reaches more than 25.5 percent of conversion efficiency, the open-circuit voltage reaches more than 710mV, and the mass production conversion efficiency is higher than 23.5 percent of the mass production conversion efficiency of the current mainstream heterojunction or TOPCon technology.
2) The low-reflectivity black silicon structure on the front surface is prepared by RIE (reactive ion etching) technology, the optical absorption of the high-efficiency battery is further improved, and the current density reaches 42.5mA/cm2Above, match the multiple passivation structure of front surface simultaneously, further promote battery passivation ability.
3) Compared with the prior art, the high-efficiency doped amorphous silicon technology based on LPCVD for the HBC battery respectively realizes the n + doped amorphous silicon layer and the p + doped amorphous silicon layer by utilizing the LPCVD doping technology and the mask grooving technology, the technology keeps the characteristics of no shielding on the front surface and high short-circuit current of the interdigital back contact battery, simultaneously realizes the passivation contact capability on the back surface, greatly improves the open-circuit voltage of the battery, and the mass production of the HBC battery reaches more than 25.5 percent and the open-circuit voltage of the battery reaches more than 710 mV.
4) Particularly in the process preparation of the doped amorphous silicon layer, the n + doped amorphous silicon layer is prepared by using an LPCVD method in the prior TOPCon technology, meanwhile, the low-temperature p + doped amorphous layer is realized by using a BCl3 gaseous source, the doping concentration is easy to control, the manufacturing cost is reduced more critically, a scheme which can be combined with the prior TOPCon mass production technology is provided, and the rapid technical upgrade of a mass production line can be realized.
5) The invention provides a growth method for a low-cost and high-quality doped amorphous silicon passivation layer, and meanwhile, the RIE plasma etching method is applied, so that the front surface reflectivity is greatly reduced, and the light absorption is improved. The method is particularly suitable for forming a doped amorphous silicon passivation layer and manufacturing a front surface light absorption layer in an interdigital back contact heterojunction solar cell (HBC).
Drawings
Fig. 1 is a cross-sectional view of an HBC cell structure of the present invention.
FIG. 2 is a schematic view of RIE plasma etching texture of the present invention.
FIG. 3 is a schematic view of a prior art wet-laid pile.
Reference numbers in the figures: 1. the laser grooving device comprises a crystalline silicon substrate, 2, a passivation layer, 3, a tunneling oxide layer, 4, an n + doped amorphous silicon layer, 5, a p + doped amorphous silicon layer, 6, a laser grooving region, 7, a passivation layer, 8 and a metal electrode.
Detailed Description
The technical solutions of the present invention are further described in detail below with reference to the accompanying drawings, and it should be noted that the detailed description is only for describing the present invention, and should not be construed as limiting the present invention.
As shown in fig. 1, a back contact heterojunction solar cell based on RIE plasma etching texturing comprises a crystalline silicon substrate 1, in this embodiment, the crystalline silicon substrate 1 is an N-type monocrystalline silicon substrate or a P-type monocrystalline silicon substrate, and the front surface of the crystalline silicon substrate 1 is a monocrystalline solar cell, and the reflectivity of the manufactured textured surface is less than 7%, and is greater than 10% compared with that of a traditional wet etching textured surface, which is significantly reduced, so that better light absorption and optimal short circuit current can be obtained.
The process of preparing the needed suede by the RIE plasma etching method comprises the following steps:
1) and placing the silicon wafer in a load carrier for plasma etching, and sending the silicon wafer into a cavity of the plasma etching equipment.
2) Vacuumizing the equipment, keeping the vacuum degree of the equipment at 100-Introducing 100-1000sccm SF6、100-5000sccm O2And 100-2And carrying out selective etching plasma etching for 1-100 min.
3) After the etching is finished, the reaction gas is closed, the equipment is vacuumized to be below 100mtorr, the equipment is kept for 1-5min, and then 1-10SLM N is introduced2So that the equipment reaches the normal pressure state;
4) and finishing the etching process and taking out the silicon wafer.
After the RIE plasma etching method is adopted, the specific surface area of the surface of the battery can be further increased, the light absorption utilization rate is increased, meanwhile, the reflectivity of the front surface can be greatly reduced due to the micro-nano structure, the light utilization rate is further improved, the front surface of the HBC battery is free of any shielding due to the cooperation of the HBC battery described by the invention, and at the moment, the increased light absorption and utilization rate can achieve a better effect and bring higher battery efficiency.
The back surface of the crystalline silicon substrate adopts a volume ratio of 2: 1: 5 HNO3/HF/H2O prepared acid polished surface or KOH alkali polished surface with mass fraction of 49%, the back surface requires reflectivity of more than 30%, and the O is subjected to 5-10min3The cleaning is carried out to achieve the optimal surface state, reduce the surface recombination possibly brought by pollution and provide better conditions for the subsequent passivation process.
The front surface of the crystalline silicon substrate 1 comprises at least one passivation layer 2; the back surface of the crystalline silicon substrate 1 comprises a tunneling oxide layer 3, n + doped amorphous silicon layers 4 and p + doped amorphous silicon layers 5 which are alternately arranged, a laser grooving region 6, a passivation layer 7 and a metal electrode 8 from inside to outside.
The passivation layer on the front surface of the crystalline silicon substrate 1 is one or a combination of several of SiO2, Al2O3, Si3N4 and SiON, and the passivation film can selectively utilize a non-spin plating technology to reduce the back-side spin plating influence. The preparation of the passivation film may be achieved using a horizontal PECVD apparatus.
The tunneling oxide layer on the back surface of the crystalline silicon substrate 1 is prepared by any one of normal-pressure thermal oxidation and LPCVD thermal oxidation, and a good carrier tunneling effect can be obtained when the thickness of the oxide layer is 1-3 nm.
The n + doped amorphous silicon layer and the p + doped amorphous silicon layer can be realized by an LPCVD doping technology, wherein B doping is realized by a BCl3 gaseous doping source, and the n + doped amorphous silicon layer and the p + doped amorphous silicon layer are alternately realized by mask and laser grooving technologies respectively.
In the embodiment of the invention, the passivation layer on the back surface of the crystalline silicon substrate adopts one or two combinations of Si3N4 and SiON, and is different from the front surface, and an Al2O3 passivation film is not needed to be used, because the Al2O3 film carries negative charges to form an inversion on the back surface of the N-type cell, which is not beneficial to the transmission of carriers.
In the embodiment of the invention, the metal electrode is silver paste.
The HBC battery prepared by the invention keeps the characteristics of no shielding on the front surface and high short-circuit current of the interdigital back contact battery, and meanwhile, the passivation contact capability is realized on the back surface, and the open-circuit voltage of the battery is greatly improved. After the front surface adopts the RIE plasma etching method, the specific surface area of the surface of the battery can be further increased, the light absorption utilization is increased, and the current density of the battery is greatly improved. The electrical performance of the prepared HBC battery is tested by using a standard solar battery testing method, the efficiency of the mass-produced HBC battery reaches over 25.5 percent, the open-circuit voltage of the battery reaches over 710mV, and the current density reaches 42.5mA/cm2The above.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be considered to be within the technical scope of the present invention, and the technical solutions and the inventive concepts thereof according to the present invention should be equivalent or changed within the scope of the present invention.
Claims (10)
1. A back contact heterojunction solar cell based on RIE (reactive ion etching) texturing is characterized by comprising a crystalline silicon substrate, wherein the front surface of the crystalline silicon substrate comprises at least one passivation layer, and the front surface forms an ultra-low reflectivity surface through an RIE (reactive ion etching) method; the back surface of the crystalline silicon substrate comprises a tunneling oxide layer, n + doped amorphous silicon layers/p + doped amorphous silicon layers which are arranged alternately, a laser grooving region, a passivation layer and a metal electrode from inside to outside.
2. The RIE (reactive ion etching) plasma etching texturing-based back contact heterojunction solar cell as claimed in claim 1, wherein the crystalline silicon substrate is any one of an N-type monocrystalline silicon substrate or a P-type monocrystalline silicon substrate.
3. The back contact heterojunction solar cell based on RIE (reactive ion etching) texturing according to claim 1, wherein the front surface of the crystalline silicon substrate is a texturing surface, and the texturing is performed by adopting an RIE plasma etching method;
the process of preparing the needed suede by adopting the RIE plasma etching method comprises the following steps:
1) placing a silicon wafer in a carrying carrier for plasma etching, and sending the silicon wafer into a cavity of plasma etching equipment;
2) vacuumizing the device, maintaining the vacuum degree of the device at 100-2And 100-2Carrying out plasma etching for 1-100 min;
3) after the etching is finished, the reaction gas is closed, the equipment is vacuumized to be below 100mtorr, the equipment is kept for 1-5min, and then 1-10SLM N is introduced2So that the equipment reaches the normal pressure state;
4) and finishing the etching process and taking out the silicon wafer.
4. The RIE plasma etching texturing-based back contact heterojunction solar cell of claim 1, wherein the back surface of the crystalline silicon substrate is any one of an acid polished surface or an alkali polished surface.
5. The RIE (reactive ion etching) plasma etching texturing-based back contact heterojunction solar cell as claimed in claim 1, wherein the passivation layer arranged on the front surface of the crystalline silicon substrate is SiO2、AlOx、SiNx、SiONxOne ofOne or a combination of several.
6. The RIE (reactive ion etching) plasma etching texturing-based back contact heterojunction solar cell as claimed in claim 1, wherein the tunneling oxide layer on the back surface of the crystalline silicon substrate is prepared by any one of atmospheric pressure thermal oxidation and LPCVD thermal oxidation.
7. The RIE (reactive ion etching) plasma etching texturing-based back contact heterojunction solar cell as claimed in claim 1, wherein the n + doped amorphous silicon layer/p + doped amorphous silicon layer arranged alternately is implemented by LPCVD (low pressure chemical vapor deposition) doping technology, wherein B doping is implemented by BCl (bulk carbon chemical vapor deposition)3A gaseous doping source.
8. The back contact heterojunction solar cell based on RIE plasma etching texturing as claimed in claim 1, wherein the n + doped amorphous silicon layer and the p + doped amorphous silicon layer are alternately implemented by using mask and laser grooving technologies, respectively.
9. The RIE (reactive ion etching) plasma etching texturing-based back contact heterojunction solar cell of claim 1, wherein the passivation layer on the back surface of the crystalline silicon substrate is one or a combination of SiNx and SiONx.
10. The RIE plasma etching texturing-based back contact heterojunction solar cell of claim 1, wherein the metal electrode is silver paste.
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| CN114883443A (en) * | 2022-03-28 | 2022-08-09 | 普乐新能源科技(徐州)有限公司 | Poly-Si plating removal method and application in TopCon battery preparation |
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| CN114883443A (en) * | 2022-03-28 | 2022-08-09 | 普乐新能源科技(徐州)有限公司 | Poly-Si plating removal method and application in TopCon battery preparation |
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