CN114019762A - Method for preparing nano array by laser evanescent wave near-field interference quantum lithography - Google Patents

Method for preparing nano array by laser evanescent wave near-field interference quantum lithography Download PDF

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CN114019762A
CN114019762A CN202111254057.0A CN202111254057A CN114019762A CN 114019762 A CN114019762 A CN 114019762A CN 202111254057 A CN202111254057 A CN 202111254057A CN 114019762 A CN114019762 A CN 114019762A
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photoresist
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CN114019762B (en
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黄小平
颜子龙
昌竹
彭奉江
杨镇源
陈若童
赵青
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University of Electronic Science and Technology of China
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2053—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B82B3/0009—Forming specific nanostructures
    • B82B3/0014—Array or network of similar nanostructural elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70408—Interferometric lithography; Holographic lithography; Self-imaging lithography, e.g. utilizing the Talbot effect
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    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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Abstract

The invention discloses a method for preparing a nano array by laser evanescent wave near-field interference quantum lithography, belonging to the technical field of photoelectricity. Doping metal ions and rare earth ions into photoresist to obtain composite ion-doped photoresist which can realize quantum space limitation under the action of evanescent standing wave light; then spin-coating the composite photoresist on a substrate, and obtaining a uniform and thin photoresist coating film through multiple spin-coating and drying; and then, by constructing a laser evanescent standing wave near-field interference quantum lithography system, based on a quantum multiphoton exposure principle of a near-field period evanescent standing wave light field and doped photoresist, performing laser evanescent standing wave near-field interference quantum lithography to obtain the nano array. The prepared nano array has the advantages of adjustable period, small unit structure size, excellent macroscopic quantum performance and the like, so that the nano array device has excellent macroscopic quantum effect performance.

Description

Method for preparing nano array by laser evanescent wave near-field interference quantum lithography
Technical Field
The invention belongs to the technical field of photoelectricity, and particularly relates to a method for preparing a nano array by laser evanescent wave near-field interference quantum lithography.
Background
Photolithography is a key process for preparing integrated circuits, and the ultimate purpose of photolithography is to copy the pattern designed on the mask plate onto the wafer silicon wafer to prepare for the subsequent etching transfer pattern or ion implantation process. Due to quantum effect, a single semiconductor quantum dot structure with a nanometer scale in a semiconductor device shows excellent photoelectric characteristics; however, the macroscopic quantum effect exhibited by a large number of quantum dots requires the preparation of a periodic nanopore array on a planar substrate to guide the growth of the quantum dots, and the accurate control and adjustment of the size, density, shape and uniformity of the quantum dots are realized.
In recent years, many research groups at home and abroad have widely developed the research on the aspect of super-resolution lithography and have made some breakthroughs. In 2004, the institute of photonics in the department of Chinese sciences reported that irradiation of an Ag mask grating with a period of 300nm with a light source with an operating wavelength of 436nm (g-line) resulted in SPs interferometric lithography patterns with a mask period of 1/3. This method can produce nano-patterns with high resolution, and the pattern period is determined by the mask pattern period. However, SPs limited to surface transmission still have some defects in interference lithography, such as non-uniform interference optical field, small area of interference pattern, mask requiring expensive processing means such as Focused Ion Beam (FIB) or electron beam Etching (EBL); in addition, the multistage diffracted wave excited by the mask is directly transmitted to the photoresist layer, and a wider transmission spectrum is easily influenced by the roughness of the nano-film or other defects, so that the practical application of SPs interference is limited, and the problem to be solved by SPs interference lithography is also solved.
In 2012, Eugen Pavel in Roman proposed quantum optical lithography methods, the lithographic line width of which could reach the nanometer scale. The key technology of the method is a fluorescent photoresist technology, quantum direct-write lithography is adopted, the electric field gradient in light spots enables the synergistic effect between silver ions and rare earth ions in the photoresist to generate a quantum multiphoton process, the exciton energy transfer process realizes quantum space limitation, the energy in the range of 500nm light spots can be transferred to a reaction center with the diameter less than 1nm, and the lithography line width is reduced to a nanometer level or even a sub-nanometer level. However, the periodicity and edge quality of the lithography pattern produced by the method are poor, and the method cannot be well applied to actual production.
The macroscopic quantum effect of a photoelectric device based on a large-scale micro-nano array structure, such as a graphene quantum dot array arranged in a periodic lattice structure, can meet the common requirements of the photoelectric device in basic research and industrial circles. However, due to the differences in the size, edge quality, and array area and density of the graphene quantum dot units, the physical properties thereof are greatly different, and therefore, it is important to continuously strive to develop a manufacturing technology for large-area, high-quality, small-size, and small-period graphene quantum dot arrays.
Disclosure of Invention
The invention provides a method for preparing a nano array by laser evanescent wave near-field interference quantum lithography, aiming at achieving the purpose of preparing the nano array with large area, high quality and adjustable size period. Doping metal ions and rare earth ions into photoresist to obtain composite ion-doped photoresist which can realize quantum space limitation under the action of evanescent standing wave light; secondly, spin-coating the composite photoresist on a substrate, and obtaining a uniform and thin photoresist coating film through multiple spin-coating and drying; and then, by constructing a laser evanescent standing wave near-field interference quantum lithography system, based on a quantum multiphoton exposure principle of a near-field period evanescent standing wave light field and doped photoresist, performing laser evanescent standing wave near-field interference quantum lithography. The prepared nano array has the advantages of adjustable period, small unit structure size, excellent macroscopic quantum performance and the like. So that the nano-array device has excellent macroscopic quantum effect performance.
The technical scheme adopted by the invention is as follows:
a method for preparing a nano array by laser evanescent wave near-field interference quantum lithography comprises the following steps:
step 1, doping metal ions and rare earth ions into a photoresist to obtain a composite ion-doped photoresist;
and respectively weighing a certain proportion of metal ion compound and rare earth ion compound, dissolving the metal ion compound and the rare earth ion compound in an absolute ethyl alcohol solution, and uniformly mixing the metal ion compound and the rare earth ion compound with the photoresist to obtain the composite ion-doped photoresist capable of realizing the quantum space limitation effect under the action of evanescent standing wave light.
Step 2, utilizing a photoresist coating process to spin-coat the composite ion-doped photoresist on the substrate;
and drying the cleaned substrate by using a photoresist dryer, spin-coating the composite ion-doped photoresist on the substrate by using a spin coater, spin-coating for multiple times until the thickness of the composite ion-doped photoresist meets the requirement, and drying the composite ion-doped photoresist to form a uniform composite ion-doped photoresist film.
Step 3, constructing a laser evanescent standing wave near-field interference quantum lithography system;
the four beams of laser meeting the interference condition are respectively incident on four side surfaces of an inverted positive four-glass prismatic table, the incident angles of the four beams of laser are adjusted to enable total reflection to occur at the same positions on the inner side of the upper surface of the inverted positive four-glass prismatic table, light spots formed by the total reflection of the four beams of laser are completely overlapped, light field vectors at the overlapped positions of the light spots are overlapped to form evanescent standing waves, and the construction of a laser evanescent standing wave near-field interference quantum lithography system is realized.
Step 4, performing near-field interference quantum lithography on the laser evanescent wave;
and (3) covering the upper surface of the inverted square glass frustum pyramid with the surface of the substrate coated with the composite ion-doped photoresist facing downwards, and carrying out laser evanescent wave near-field interference quantum lithography development.
The rare earth ions are used as a photosensitizer, under the action of an evanescent standing wave near field, the rare earth ions receive energy from electric ions and are converted into photoelectrons and higher-valence rare earth ions, and the metal ions absorb the photoelectrons released by the rare earth ions and are converted into metal atoms, so that the metal nanocluster is formed. In the process, the metal nanoclusters generate local energy accumulation under the action of the laser evanescent standing wave light field, the local enhanced light field exposes the photoresist to form a nano-scale exposure area, and the whole finally forms an exposure pattern of the nano-dot array.
And 5, cleaning the photoresist on the surface of the substrate by using a developing solution to obtain the nano-dot array.
Further, in the step S3, the four laser beams are reduced to two laser beams incident on the opposite side, so as to obtain the nanowire array.
Further, in the step 1, the molar ratio of the metal ions to the rare earth ions is 4-6: 1; the metal ions are Ag, Sn, Zn, Al and the like, and the rare earth ions are Ce, Sm and the like.
Further, in step 2, the substrate is a monocrystalline silicon substrate.
Further, in the step 2, the thickness of the photoresist is 10-60 nm.
Further, the four laser beams in step 3 have the same frequency, constant phase difference and consistent vibration direction.
Furthermore, the four beams of laser in the step 3 are TE polarized laser, the wavelength range is 325 nm-532 nm, and the beam power is 10-20 mw.
Furthermore, the refractive index of the glass adopted by the positive four-glass prismatic table is 1.8-2.1, the roughness is not more than 0.01um, and the permeability is higher than 99.5%.
The invention provides a method for preparing a nano array by laser evanescent wave near-field interference quantum lithography. The photoresist is first doped with metal ions and rare earth ions, which function to provide the photosensitizer (rare earth ions) and the metal cluster (metal ions). And then, focusing the laser evanescent standing wave to form an optical field, wherein under the action of an evanescent standing wave near field, the rare earth ions are used as a photosensitizer to absorb energy from the ions and are converted into photoelectrons and rare earth atoms, and the metal ions are converted into metal atoms after absorbing the photoelectrons released by the rare earth ions, so that the metal nanocluster is formed. In the process, the metal nanoclusters form an optical field enhancement effect on the surface under the action of an evanescent standing wave optical field, so that coherent Frenkel exciton energy transfer in an electric field gradient is realized, quantum space limitation is realized, namely, a space area of a photochemical reaction center in photoresist is limited, and the structure size of a photoetching unit is greatly reduced.
Drawings
FIG. 1 is a flow chart of the present invention;
FIG. 2 is a schematic view of a substrate covered with graphene and a composite ion-doped photoresist;
FIG. 3 is a schematic diagram of an optical path of a laser evanescent wave near-field interference quantum lithography experimental platform;
FIG. 4 is a schematic diagram of a graphene nano quantum dot array generated on a substrate;
FIG. 5 is a graph of local optical field enhancement of silver nanoparticles in photoresist simulated by software;
FIG. 6 is a diagram showing interference patterns formed by two or four laser beams simulated by software;
fig. 7 is a schematic diagram of an absorption peak of the graphene nano quantum dot array on a near infrared spectrum.
The reference numbers illustrate:
1. the device comprises a silicon chip, 2 graphene, 3 composite ion doped BCI-3511 positive photoresist, 4 positive four glass prismatic tables, 5-1 to 5-4 four laser beams meeting interference conditions, 6-1 and 6-2 reflectors, 7-1 and 7-2 beam splitting gratings, 8 beam expanding collimating lenses, 9 beam expanding lenses and 10 laser light sources.
Detailed Description
The following provides a more detailed description of the embodiments and the operation of the present invention with reference to the accompanying drawings.
A method for preparing a graphene nanometer quantum dot array by laser evanescent wave near-field interference quantum lithography is disclosed, and a flow chart is shown in figure 1.
Step 1, doping metal ions and rare earth ions into a photoresist to obtain a composite ion-doped photoresist;
step 1-1, 0.005mol of Ce (NO) is weighed out respectively3)3、0.025mol AgNO3Is added to the smallAdding 50mL of absolute ethyl alcohol solution into the beaker, carrying out ultrasonic dissolution for 15min, transferring the solution into a 100mL volumetric flask after dissolution, adding absolute ethyl alcohol until the volume is 100mL, and shaking up for later use.
Step 1-2, 10ml of Ce (NO) prepared in the above step is taken3)3-AgNO3Adding the absolute ethyl alcohol solution and 30ml of photoresist into a beaker, stirring for 1min by using a stirring rod, carrying out ultrasonic dissolution for 15min, and fully mixing the solution to obtain the composite ion-doped photoresist.
Step 2, utilizing a photoresist coating process to spin-coat the composite ion-doped photoresist on a substrate;
and 2-1, washing the silicon wafer covered with the single-layer graphene for 30s by using deionized water and an organic solution, and rotating the silicon wafer in the washing process.
And 2-2, putting the cleaned silicon wafer on a glue drying machine, and drying for 5min at the temperature of 150 ℃ to remove water vapor on the silicon wafer, so that the photoresist can be more firmly adhered to the surface.
2-3, placing the dried silicon wafer substrate on a rotary table of a spin coater, and dripping 2-3 drops of the composite ion-doped photoresist prepared in the step 1 on the silicon wafer substrate covered with the single-layer graphene; and starting the spin coater, coating the photoresist for 2min at the rotating speed of 6000r/min, uniformly coating the photoresist on the surface of the silicon wafer substrate by using the centrifugal force generated by rotation, and repeatedly rotating for 5 times to obtain the spin-coated photoresist with the thickness of about 50 nm. The substrate covered with graphene and photoresist is shown in fig. 2.
Step 3, constructing a laser evanescent wave near-field interference quantum lithography experimental system;
step 3-1, building a laser evanescent wave near-field interference quantum lithography experimental system, wherein the experimental system is shown in fig. 3, a laser light source generates laser with the wavelength of 325nm, and four beams of laser with the same frequency, constant phase difference and consistent vibration direction are obtained after the laser passes through a beam expanding lens, a beam expanding collimating lens and three light splitting gratings in sequence;
and 3-2, adjusting the angles of the light splitting grating and the reflecting mirror, enabling four beams of laser meeting interference conditions to be respectively vertical to four side surfaces of the inverted positive four glass prismatic table to be incident, namely the incident angles are all 90 degrees, and enabling the four beams of laser to be totally reflected at the same position of the inner side of the upper surface of the prismatic table to form evanescent standing waves, generate bright light spots and realize the construction of a laser evanescent standing wave near-field interference quantum lithography system.
Step 4, performing near-field interference quantum lithography on the laser evanescent wave;
and 4-1, enabling the surface of the silicon chip substrate coated with the photoresist to face downwards, and slightly covering the upper surface of the inverted square glass frustum pyramid, wherein the area with the graphene on the substrate is coincided with the light spot area.
And 4-2, keeping the laser continuously irradiating for 10-15min, and carrying out laser evanescent wave near-field interference quantum lithography development.
Step 5, cleaning the photoresist on the surface of the substrate by using a developing solution to obtain a nano array;
step 5-1, taking down the silicon wafer substrate, and enabling the surface coated with the photoresist to face upwards; spraying tetramethylammonium hydroxide (TMAH) positive photoresist developing solution with the concentration of 2.38% on the surface of the substrate to enable the developing solution to cover the whole surface of the substrate; and standing for about 5 minutes to ensure that the developing solution and the photoresist completely react.
And 5-2, washing the substrate with deionized water, putting the silicon wafer substrate on a spin coater, and spin-drying water stains on the surface, wherein the graphene in the photoresist and laser interference exposure area is completely washed clean.
And 5-3, putting the spin-dried silicon wafer on a glue drying table for drying again, and obtaining the graphene nano quantum dot array on the surface of the substrate. The graphene nano quantum dot array generated on the substrate is shown in fig. 4 (b); fig. 4(a) is a graphene quantum wire array, which is generated by reducing four laser beams into two laser beams incident on opposite sides, and the rest steps are unchanged.
Fig. 5 is a standing wave light field pattern diagram formed by interference of frustum surface evanescent waves formed by multiple beams of laser simulated by FDTD software, wherein a is an evanescent wave standing wave image formed by two beams of laser, and b is an evanescent standing wave pattern formed by four beams of laser. The laser wavelength is 325nm, the parameters of polarization, wavelength, incident angle and the like of incident light in simulation are completely the same as those in the actual process, the simulation image can show that the standing wave light field image formed by two beams of laser interference is a line array, the line width is about 40nm, the period is about 80nm, the standing wave light field image formed by four beams of laser interference is a point array, the line width is about 30nm, and the period is about 60 nm. In the actual process, the composite ions are doped with silver ions and rare earth ions doped in the photoresist, and a photo-oxidation-reduction reaction is carried out under the illumination condition to generate the metallic silver cluster. The metallic silver clusters further limit the space area of the photochemical reaction center in the photoresist, and the photoetching line width is greatly compressed. Thereby obtaining the photoetching array image with smaller line width and smaller period.
Fig. 6 is a simulation result of local optical field enhancement of silver nanoparticles in photoresist simulated by FDTD software. The graph a and the graph b are light field enhancement images of silver nanoparticles in a standing wave light field formed by evanescent wave interference formed by two beams of laser, wherein the graph a is an xy-plane image, and a white dotted line is the position of an xz-plane monitor; and (b) an xz sectional image corresponding to the white dotted line in the graph a, wherein the white dotted line in the graph b is a boundary surface, the upper part of the dotted line is photoresist, and the lower part of the dotted line is a regular quadrangular frustum pyramid substrate. The graph c and the graph d are light field enhancement images of silver nanoparticles in a standing wave light field formed by evanescent wave interference formed by four beams of laser, wherein the graph c is an xy-plane image, and a white dotted line is the position of an xz-plane monitor; fig. d is an xz sectional image corresponding to the white dotted line in fig. c, the white dotted line in fig. d is a boundary plane, the upper part of the dotted line is photoresist, and the lower part is a regular quadrangular frustum substrate. As can be seen from fig. 6, the energy of the evanescent standing wave field is mainly concentrated around the silver nanoparticles, and the electric field intensity on the silver nanoparticles is significantly higher than that between the gaps, which can generate an optical field enhancement effect, and this optical field enhancement effect can compress the size of the cell structure. The specific process is that Ce in the photoresist is doped under the action of evanescent standing wave near field3+As a photosensitizer, it absorbs the energy of three ions and generates photoelectrons e-And is Ce4+And Ag is+Absorbs the photo-electrons and converts them into silver atoms, thereby forming silver clusters. The silver cluster reacts with the evanescent standing wave optical field to form an optical field enhancement effect on the surface, so that coherent Frenkel exciton energy in the electric field gradient is transferred, quantum space limitation is realized, and the photochemical reaction central space area in the photoresist is limited in the process, so that the polarity is enhancedThe ground compresses the structure size of the photoetching unit.
Fig. 7 is a schematic diagram of an absorption peak of a near infrared spectrum of a graphene nano quantum dot array simulated by using FDTD software, wherein incident light is a plane wave with a wavelength of 800nm to 2500nm, and the incident light is vertically incident to the graphene nano quantum dot array with a size of 20nm and a period of 60nm from bottom to top. An absorption peak with a peak value of 0.359 appears at the wavelength of 1264.63nm, which indicates that the structure can have an extinction effect on a near infrared light wave band.
While the invention has been described with reference to specific embodiments, any feature disclosed in this specification may be replaced by alternative features serving the same, equivalent or similar purpose, unless expressly stated otherwise; all of the disclosed features, or all of the method or process steps, may be combined in any combination, except mutually exclusive features and/or steps; any non-essential addition and replacement made by the technical characteristics of the technical scheme of the invention by a person skilled in the art belong to the protection scope of the invention.

Claims (8)

1. A method for preparing a nano array by laser evanescent wave near-field interference quantum lithography is characterized by comprising the following steps:
step 1, doping metal ions and rare earth ions into a photoresist to obtain a composite ion-doped photoresist;
step 2, utilizing a photoresist coating process, spin-coating the composite ion-doped photoresist on the substrate for multiple times until the thickness of the composite ion-doped photoresist film meets the requirement, and drying to obtain the composite ion-doped photoresist film;
step 3, constructing a laser evanescent standing wave near-field interference quantum lithography system;
the four beams of laser meeting interference conditions are respectively incident on four side surfaces of an inverted positive four-glass prismatic table, the incident angles of the four beams of laser are adjusted to enable total reflection to occur at the same positions on the inner side of the upper surface of the inverted positive four-glass prismatic table, light spots formed by the total reflection of the four beams of laser are completely overlapped, light field vectors at the overlapped positions of the light spots are overlapped to form evanescent standing waves, and the construction of a laser evanescent standing wave near-field interference quantum lithography system is realized;
step 4, performing near-field interference quantum lithography on the laser evanescent wave;
one surface of the substrate coated with the composite ion-doped photoresist faces downwards, the surface is covered on the upper surfaces of the inverted square glass prismatic tables, and laser evanescent wave near-field interference quantum lithography development is carried out; the rare earth ions are used as a photosensitizer, under the action of an evanescent standing wave near field, the rare earth ions receive energy from electric ions and are converted into photoelectrons and higher-valence rare earth ions, and the metal ions absorb the photoelectrons released by the rare earth ions and are converted into metal atoms, so that a metal cluster is formed; the metal clusters generate local energy accumulation under the action of the laser evanescent standing wave light field, the local enhanced light field exposes the photoresist to form a nano-scale exposure area, and the whole body finally forms an exposure pattern of a nano-dot array;
and 5, cleaning the photoresist on the surface of the substrate by using a developing solution to obtain the nano-dot array.
2. The method for preparing the nano-array by the laser evanescent wave near-field interference quantum lithography as claimed in claim 1, wherein in step S3, four laser beams are reduced to two laser beams incident at opposite sides, and finally the nano-array is obtained.
3. The method for preparing the nano-array by the laser evanescent wave near-field interference quantum lithography as claimed in claim 1 or 2, wherein the metal ions are Ag, Sn, Zn or Al, and the rare earth ions are Ce or Sm; the molar ratio of the metal ions to the rare earth ions is 4-6: 1.
4. the method for preparing the nano-array by the laser evanescent wave near-field interference quantum lithography as claimed in claim 3, wherein in the step 2, the thickness of the photoresist is 10-60 nm.
5. The method for preparing the nano-array by the laser evanescent wave near-field interference quantum lithography as claimed in claim 4, wherein in said step 2, said substrate is a single crystal silicon substrate.
6. The method for preparing the nano-array by the laser evanescent wave near-field interference quantum lithography as claimed in claim 4, wherein the laser satisfying the interference condition in the step 3 has the same frequency, constant phase difference and consistent vibration direction.
7. The method for preparing the nano-array by the laser evanescent wave near-field interference quantum lithography as claimed in claim 6, wherein the laser in the step 3 is TE polarized laser, the wavelength range is 325nm to 532nm, and the beam power is 10 mw to 20 mw.
8. The method for preparing the nano-array by the laser evanescent wave near-field interference quantum lithography as claimed in claim 4, wherein the refractive index of the glass adopted by the positive four-glass terrace is 1.8-2.1, the roughness is not more than 0.01um, and the permeability is more than 99.5%.
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