CN110376821A - A kind of chipset based on optical Kerr effect helps light phase modulation method - Google Patents
A kind of chipset based on optical Kerr effect helps light phase modulation method Download PDFInfo
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- 230000003287 optical effect Effects 0.000 title claims abstract description 123
- 238000000034 method Methods 0.000 title claims abstract description 71
- 230000005374 Kerr effect Effects 0.000 title claims abstract description 30
- 230000005540 biological transmission Effects 0.000 claims abstract description 39
- 230000008859 change Effects 0.000 claims abstract description 18
- 238000003860 storage Methods 0.000 claims abstract description 12
- 230000033228 biological regulation Effects 0.000 claims abstract description 9
- 238000009826 distribution Methods 0.000 claims description 18
- 230000009977 dual effect Effects 0.000 claims description 16
- 239000012782 phase change material Substances 0.000 claims description 11
- 238000004590 computer program Methods 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 9
- 230000008878 coupling Effects 0.000 claims description 8
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- 238000013461 design Methods 0.000 claims description 6
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 claims description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 5
- 239000005387 chalcogenide glass Substances 0.000 claims description 5
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 5
- 230000000694 effects Effects 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 230000009022 nonlinear effect Effects 0.000 claims description 5
- 230000010363 phase shift Effects 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 230000009471 action Effects 0.000 claims description 4
- 230000008901 benefit Effects 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 16
- 238000002360 preparation method Methods 0.000 abstract description 9
- 238000005530 etching Methods 0.000 abstract description 3
- 238000010276 construction Methods 0.000 abstract 1
- 238000012545 processing Methods 0.000 description 12
- 238000004891 communication Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 8
- 230000006870 function Effects 0.000 description 7
- 238000005086 pumping Methods 0.000 description 6
- 230000002269 spontaneous effect Effects 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000001069 Raman spectroscopy Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 230000005622 photoelectricity Effects 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000013528 artificial neural network Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0305—Constructional arrangements
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/3515—All-optical modulation, gating, switching, e.g. control of a light beam by another light beam
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- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
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Abstract
The invention discloses a kind of chipsets based on optical Kerr effect to help light phase modulation method, system and storage medium, and wherein method includes that high power X-band driving light is injected in a certain section of transmission waveguide of integrated chip optical path;Driving light causes nonlinear optics Kerr effect, changes transmission waveguide effective refractive index;Effective refractive index variation influences the Y band signal light transmitted in the waveguide, its phase is made to change, and realizes light field regulation.The present invention can reduce the transmission loss due to special construction introducing, mechanical rapid wear characteristic and by external voltage bring security risk;Signal light will not be generated and be significantly affected;Preparation is directly processed by single exposure etching process.The excess loss that driving light introduces is negligible, signal light is in single photon good opportunity, and each arm transmission loss of quantum inteferometer using the above structure is approximately uniform, and interference contrast is expected to close to ideal value.
Description
Technical field
The invention mainly relates to the ambits such as nonlinear optics, micronano optical, all optical communication, quantum optices, specifically
A kind of chipset based on optical Kerr effect helps light phase modulation method, and this method, which is expected to help light high speed in chipset, to be believed
Number processing is especially used widely in terms of Quantum signal processing.
Background technique
Monster chip integrated optics technique is quickly grown in recent years.Compared with traditional space discrete device optical path, complete
Optic fibre light path etc., integrated chip optical path have many advantages, such as that low in energy consumption, small in size, size is small, stable optical performance, particularly suitable for
Construct large-scale all optical communication signal processing system.Meanwhile the same large scale integrated circuit of large-scale integrated optical path chip preparing process
Chip preparing process highly compatible, this makes it possible that photoelectricity hybrid integrated functional chip moves towards actually from concept, and expedites the emergence of
One new branch of science --- integrated optoelectronics.
On the other hand, with the rapid development of the network information technology, the safety and reliability demand of communication network is increasingly
It highlights.The Technique on Quantum Communication to come into being, not based on Heisenberg uncertainty principle, the inseparable principle of quantum state, quantum state
Reproducible principle etc. is expected to the emerging communication network of building " unconditional security ".Traditional quantum communication system is based primarily upon sky
Between discrete device optical path, the building of all -fiber optical path, system dimension is big, stability is poor, upgrading difficulty is high, it is difficult in laboratory
Large-scale application is unfolded in external environment.Have benefited from the silicon based photon device preparation technology to reach its maturity, is based on silicon-on-insulator platform
Optical device, including optical directional coupler, optical beam-splitter, polarization beam apparatus, wavelength division multiplexer, low-temperature nano line monochromatic light
Sub- detector etc., gradually exploitation prepares and plays the part of more and more important angle in the research of integrated chip all-optical signal processing
Color.
Integrated optical chip interference system can carry out path clustering to optical signal, be mainly used in classical optics field
The coding and decoding of optic communication signal is then mainly used in quantum optical systems field and realizes that quantum key distribution, quantum are dry
Relate to the functions such as measurement.Currently, the research emphasis of integrated optical chip interference system pays close attention to two aspects, first is that realizing higher modulation
The technology path of speed, second is that having the preparation process of efficient feasible feature.With the continuous hair of semiconductor micro-nano processing technology
Exhibition, the preparation of monster chip integrated optical circuit no longer become technical problem, but the phase-modulation rate of integrated chip optical path
Problem is not solved preferably but always.
Currently, integrated chip optical path phase-modulation mainly uses following several technology paths:
1. thermo-optic modulation: this method mainly passes through integrated chip heater and changes transmission waveguide effective refractive index, realizes
Phase-modulation.However, thermo-optic effect needs to undergo relatively slow heat dissipation process, modulating speed is lower;Using hanging structure
Transmission waveguide although there is relatively short heat dissipation time, the mechanical stability for integrated chip optical path hides some dangers for.
2. carrier modulation: this method mainly passes through the technological means such as ion implanting, and P-I-N is introduced in transmission waveguide
Structure changes free carrier concentration by external voltage and realizes phase-modulation.However, the above method, which removes, is limited to preparation process
Outside, easily waveguide is caused to puncture because of external overtension.In addition, (usually using free carrier in free carrier dissipation
Service life is measured) under the influence of, carrier phase-modulation equally faces rate limit.
3. coating carrier modulation: this method is mainly enhanced by covering special coating (graphene etc.) in waveguide surface
Phase modulation depth reduces the free carrier service life, realizes high-speed phase modulation by external electrode.However, coating structure meeting
Relatively high insertion loss is introduced, the enhancing of above-mentioned loss same-phase modulation depth is adjoint and gives birth to, this just determines that coating carries
Stream modulation is difficult to be used widely in large-scale integrated optical path.
Accordingly, currently used integrated chip optical path phase modulating method can not further break through rate limit, be difficult same
When the features such as taking into account high speed, efficient, low damage, stablizing.Therefore, a kind of phase modulating method for meeting above-mentioned requirements is designed and in core
It is applied in piece integrated optical circuit, there is Important Academic meaning and engineering value.
Summary of the invention
For modulation rate bottleneck problem existing for existing integrated chip optical path phase modulation technique scheme, the present invention is proposed
A kind of chipset based on optical Kerr effect helps light phase modulation method, the integrated chip based on relative maturity at this stage
Optical path preparation process, using single exposure etch preparation method, reliability is stronger, be expected to integrated chip all-optical signal processing,
The fields such as integrated chip quantum key distribution, integrated chip quantum interference measurement, integrated optical chip neural network obtain extensively
Using.
In order to reach said effect, the chipset provided by the invention based on optical Kerr effect helps light phase modulation side
Method includes:
Step 1: injecting high power X-band in a certain section of transmission waveguide of integrated chip optical path drives light;
Step 2: driving light causes nonlinear optics Kerr effect, change transmission waveguide effective refractive index;
Step 3: effective refractive index variation influences the Y band signal light transmitted in the waveguide, its phase is made to change,
Realize light field regulation.
Preferably, the High Speed Modulation of integrated chip optical path, specific implementation side are realized by dual wavelength optical directional coupler
Method includes:
Step 1.1, high power driving light are introduced by upper arm waveguide, are coupled into lower arm waveguide by evanescent wave;
Step 1.2, signal light are introduced by lower arm waveguide, directly pass through waveguide;
Step 1.3, driving light cause non-linear Kerr effect in lower arm waveguide, are modulated to signal light phase;
Step 1.4, the coupling length of optical directional coupler and waveguide line space design to drive light between two waveguides
The coefficient of coup reaches maximum, the coefficient of coup of the signal light between two waveguides reaches minimum.
Preferably, realize that All-optical signal interference especially quantum signal is interfered by quantum inteferometer, concrete methods of realizing
Include:
Step 2.1, X-band driving light pass through the incoming carrier waveguide of photon crystal grating coupler;
Step 2.2, Y band signal light enter transmission waveguide by photon crystal grating coupler, and pass through multiple-mode interfence
Instrument is separated to multiple optical paths;
Step 2.3, multichannel driving light can be coupled into the transmission wave of each optical path via dual wavelength optical beam splitter
It leads, and modulating action is generated to signal light phase;
Step 2.4, remnant drive light are coupled through another dual wavelength optical directional coupler and are exported;
Step 2.5, signal light phase modulation speed determine that phase modulation depth is by driving photopeak by driving light repetition rate
It is worth power decision;
Step 2.6 is exported by each road signal of phase-modulation through multi-mode interferometer, in multi-mode interferometer output arm
Light distribution or probability distribution are codetermined by each road driving signal, realize full photocontrol integrated optical chip system with this, and
Multi-photon interference, Path selection quantum key distribution are realized in quantum optices field.
Preferably, X-band driving light is impulse code in above-mentioned steps 2.1.
Preferably, Y band signal light is point symbol in above-mentioned steps 2.2.
Preferably, above-mentioned modulator approach based on the material of integrated chip optical path include for crystalline silicon, amorphous silicon, high refraction
One of rate quartz, silicon nitride, silicon carbide, chalcogenide glass, aluminum gallium arsenide are a variety of, with higher non-in driving light X-band
Linear coefficient;Waveguiding structure has lower transmission loss with stronger limit light ability, in Y wave band in X-band.
Preferably, above-mentioned modulator approach can be used to realize the High Speed Modulation of phase, can also utilize optical interdferometer etc.
Structure realizes intensity modulated, time-modulation.
Preferably, above-mentioned modulator approach can be applied to various waveguiding structures, and cross-sectional structure is set for driving light
Meter, with the smallest full vector effective core area, signal light obtained in driving optical power as small as possible (0,
Phase change π).
Preferably, light is driven to introduce nonlinear effect in optical phase change material in the above method;As waveguide cores or
The phase-change material refractive index of covering changes;The signal light transmitted in waveguide generates phase shift.
It is a kind of to realize the system for helping light phase modulation method such as the above-mentioned chipset based on optical Kerr effect, comprising:
Light is driven to introduce unit, for injecting the driving of high power X-band in a certain section of transmission waveguide of integrated chip optical path
Light, driving light introduce nonlinear effect in optical phase change material;It is sent out as waveguide cores or the phase-change material refractive index of covering
It is raw to change;The signal light transmitted in waveguide generates phase shift;
Waveguide index changes unit, and for driving light to cause nonlinear optics Kerr effect, it is effective to change transmission waveguide
Refractive index;
Light field regulates and controls unit, changes the Y band signal light for influencing to transmit in the waveguide for effective refractive index, makes its phase
It changes, realizes light field regulation.
Preferably, above system based on integrated chip optical path material include be crystalline silicon, amorphous silicon, high refractive index stone
One of English, silicon nitride, silicon carbide, chalcogenide glass, aluminum gallium arsenide are a variety of, with higher non-linear in driving light X-band
Coefficient;Waveguiding structure has lower transmission loss with stronger limit light ability, in Y wave band in X-band.
Preferably, above system can be used to realize the High Speed Modulation of phase, can also utilize the structures such as optical interdferometer
Realize intensity modulated, time-modulation.
Preferably, above system can be applied to various waveguiding structures, and cross-sectional structure is designed for driving light, makes
There is the smallest full vector effective core area, signal light obtains (0, π) in driving optical power as small as possible
Phase change.
Preferably, above system realizes the High Speed Modulation of integrated chip optical path, packet by dual wavelength optical directional coupler
Include: high power driving light is introduced by upper arm waveguide, is coupled into lower arm waveguide by evanescent wave;Signal light is drawn by lower arm waveguide
Enter, directly passes through waveguide;Driving light causes non-linear Kerr effect in lower arm waveguide, is modulated to signal light phase;Light
The coupling length and waveguide line space design for learning directional coupler make that the coefficient of coup of the light between two waveguides is driven to reach maximum, letter
Number coefficient of coup of the light between two waveguides reaches minimum.
Preferably, above system realizes that All-optical signal interference especially quantum signal is interfered by quantum inteferometer, comprising:
X-band drives light to pass through the incoming carrier waveguide of photon crystal grating coupler;Y band signal light is coupled by photon crystal grating
Device enters transmission waveguide, and separates by multi-mode interferometer to multiple optical paths;Multichannel drives light can be via dual wavelength optical
Beam splitter is coupled into the transmission waveguide of each optical path, and generates modulating action to signal light phase;Remnant drive light warp
Another dual wavelength optical directional coupler coupling export;Signal light phase modulation speed determines by driving light repetition rate, phase
Modulation depth is by driving photopeak value power decision;It is exported by each road signal of phase-modulation through multi-mode interferometer, it is dry in multimode
Light distribution or probability distribution in interferometer output arm are codetermined by each road driving signal, realize full photocontrol chipset with this
Multi-photon interference, Path selection quantum key distribution are realized at optical system, and in quantum optices field.
A kind of computer readable storage medium, is stored thereon with computer program, realization when which is executed by processor
The step of above method.
Compared with prior art, have the advantages that have as follows using the quantum inteferometer that the method for the invention is realized:
Firstly, full light phase regulation has higher stability and faster modulating speed, cutting needn't worry due to special
Transmission loss that structure introduces, mechanical rapid wear characteristic and by external voltage bring security risk;
Secondly, when signal light is in single photon magnitude, above-mentioned full light quantum interferometer more sensitive to various optical noises
Driving light and signal light between there are biggish wavelength is detuning, the pumping sideband noise that is introduced by driving light, pumping residual are made an uproar
Sound, spontaneous Raman emission, spontaneous four-wave mixing noise will not generate signal light and significantly affect;
Again, above structure does not need photoelectricity hybrid technology, by rationally designing waveguiding structure, it is ensured that all devices pair
The top silicon layer thickness answered is consistent, directly processes preparation by single exposure etching process.
Finally, the excess loss that driving light introduces can be neglected, signal light is in single photon good opportunity, using the above structure
Each arm transmission loss of quantum inteferometer it is approximately uniform, interference contrast be expected to close to ideal value.
Detailed description of the invention
In order to illustrate the technical solution of the embodiments of the present invention more clearly, will make below to required in the embodiment of the present invention
Attached drawing is briefly described, for those of ordinary skill in the art, without creative efforts, also
Other drawings may be obtained according to these drawings without any creative labor.
Fig. 1 shows dual wavelength optical directional coupling structure and driving light/signal light mode distributions schematic diagram;
Fig. 2 shows full optical drive Mach-once special quantum inteferometer schematic diagrames.
Specific embodiment
The feature and exemplary embodiment of various aspects of the invention is described more fully below, in order to make mesh of the invention
, technical solution and advantage be more clearly understood, with reference to the accompanying drawings and embodiments, the present invention is further retouched in detail
It states.It should be understood that specific embodiment described herein is only configured to explain the present invention, it is not configured as limiting the present invention.
To those skilled in the art, the present invention can be real in the case where not needing some details in these details
It applies.Below the description of embodiment is used for the purpose of better understanding the present invention to provide by showing example of the invention.
It should be noted that, in this document, relational terms such as first and second and the like are used merely to a reality
Body or operation are distinguished with another entity or operation, are deposited without necessarily requiring or implying between these entities or operation
In any actual relationship or order or sequence.Moreover, the terms "include", "comprise" or its any other variant are intended to
Non-exclusive inclusion, so that the process, method, article or equipment including a series of elements is not only wanted including those
Element, but also including other elements that are not explicitly listed, or further include for this process, method, article or equipment
Intrinsic element.In the absence of more restrictions, the element limited by sentence " including ... ", it is not excluded that including
There is also other identical elements in the process, method, article or equipment of the element.
The basic principle of the present embodiment is: in integrated chip optical path, being introduced using high power X-band driving light non-linear
Optical Kerr effect changes transmission waveguide effective refractive index, causes the Y band signal light phase change transmitted in the waveguide.
Nonlinear optics Kerr effect has transient response, and dissipation time is not present, therefore can realize that high-speed phase regulates and controls.
The present embodiment can be used for realizing the High Speed Modulation of integrated chip optical path, need to use dual wavelength light during realization
Directional coupler is learned, optical directional coupler structure provided in this embodiment is as shown in Figure 1, specific embodiment are as follows: high power
It drives light to introduce (solid line) by upper arm waveguide, lower arm waveguide (as shown in Fig. 1 upper right) is coupled by evanescent wave;Signal light by
Lower arm waveguide introduces (dotted line), directly passes through waveguide (as shown in the bottom right Fig. 1);Driving light causes non-linear gram in lower arm waveguide
That effect, is modulated signal light phase;The coupling length L of optical directional coupler2With waveguide spacing G2It is special to need to carry out
Design, so that the coefficient of coup of the driving light between two waveguides reaches maximum, the coefficient of coup of the signal light between two waveguides reaches most
It is small.
It present embodiments provides a kind of chipset based on optical Kerr effect and helps light phase modulation method, comprising:
Step 1: injecting high power X-band in a certain section of transmission waveguide of integrated chip optical path drives light;
Step 2: driving light causes nonlinear optics Kerr effect, change transmission waveguide effective refractive index;
Step 3: effective refractive index variation influences the Y band signal light transmitted in the waveguide, its phase is made to change,
Realize light field regulation.
In some embodiments, nonlinear optics gram is introduced using high power X-band driving light in integrated chip optical path
That effect, changes transmission waveguide effective refractive index, and the Y band signal light phase transmitted in the waveguide is made to change.It is non-linear
Optical Kerr effect has transient response, and dissipation time is not present, therefore can realize the high speed regulation of integrated chip optical path.
In some embodiments, the material of integrated chip optical path includes but is not limited to crystalline silicon, amorphous silicon, high refractive index stone
English, silicon nitride, silicon carbide, chalcogenide glass, aluminum gallium arsenide etc. are needed in driving light X-band nonlinear factor with higher;Waveguide
Structure needs to have in X-band with stronger limit light ability (having lesser full vector effective core area), in Y wave band
Lower transmission loss.
In some implementations, classical strong optical signal and quantum low light signals can be suitable for simultaneously;Phase modulating method is not only
It can be used to realize the High Speed Modulation of phase, can also realize intensity modulated, time-modulation etc. using structures such as optical interdferometers.
In particular, it should be pointed out that phase modulating method described in claim 1 be applied to quantum optices chip when, driving light X-band and
Should have between signal light Y wave band it is biggish detuning, to guarantee pumping sideband noise, the pumping residual noise, spontaneous of driving light
Raman scattering noise, spontaneous four-wave mixing noise will not have an impact Y wave band quantum low light signals.
In some embodiments, various waveguiding structures be can be applied to, cross-sectional structure answers emphasis to carry out for driving light
Design, with the smallest full vector effective core area, so that signal light is in driving optical power as small as possible
Obtain the phase change of (0, π).
In some embodiments, optical phase change material, basic principle be can be applied to are as follows: driving light is in optical phase change material
Middle introducing nonlinear effect;Phase-change material refractive index as waveguide cores or covering changes;The letter transmitted in waveguide
Number light generates phase shift.
Phase modulating method described in the present embodiment can be used for realizing that All-optical signal interference especially quantum signal is interfered.This
The full optical drive Mach-that embodiment provides once special quantum inteferometer as shown in Fig. 2, specific embodiment are as follows: X-band drives light
(impulse code) passes through the incoming carrier waveguide of photon crystal grating coupler;Y band signal light (point symbol) passes through photon crystalline substance
Body grating coupler enters transmission waveguide, and separates by multi-mode interferometer to multiple optical paths;Multichannel drives light can be via
Dual wavelength optical beam splitter shown in FIG. 1 is coupled into the transmission waveguide of each optical path, and generates tune to signal light phase
Production is used;Remnant drive light is coupled through another dual wavelength optical directional coupler and is exported;Signal light phase modulation speed is by driving
Light repetition rate determines that phase modulation depth is by driving photopeak value power decision;By each road signal of phase-modulation through multimode
Interferometer export, light distribution (classical optics field) or probability distribution (the quantum optices neck in multi-mode interferometer output arm
Domain) co-determination of You Gelu driving signal, full photocontrol integrated optical chip system is realized with this, and in quantum optices field reality
The multiple functions such as existing multi-photon interference, Path selection quantum key distribution.
Compared with prior art, the present invention achieves following remarkable result:
Firstly, full light phase regulation has higher stability and faster modulating speed, cutting needn't worry due to special
Transmission loss that structure introduces, mechanical rapid wear characteristic and by external voltage bring security risk;
Secondly, when signal light is in single photon magnitude, above-mentioned full light quantum interferometer more sensitive to various optical noises
Driving light and signal light between there are biggish wavelength is detuning, the pumping sideband noise that is introduced by driving light, pumping residual are made an uproar
Sound, spontaneous Raman emission, spontaneous four-wave mixing noise will not generate signal light and significantly affect;
Again, above structure does not need photoelectricity hybrid technology, by rationally designing waveguiding structure, it is ensured that all devices pair
The top silicon layer thickness answered is consistent, directly processes preparation by single exposure etching process.
Finally, the excess loss that driving light introduces can be neglected, signal light is in single photon good opportunity, using the above structure
Each arm transmission loss of quantum inteferometer it is approximately uniform, interference contrast be expected to close to ideal value.
For convenience of description, it is divided into various units when description apparatus above with function to describe respectively.Certainly, implementing this
The function of each unit can be realized in the same or multiple software and or hardware when application.
It should be understood by those skilled in the art that, the embodiment of the present invention can provide as method, system or computer program
Product.Therefore, complete hardware embodiment, complete software embodiment or reality combining software and hardware aspects can be used in the present invention
Apply the form of example.Moreover, it wherein includes the computer of computer usable program code that the present invention, which can be used in one or more,
The computer program implemented in usable storage medium (including but not limited to magnetic disk storage, CD-ROM, optical memory etc.) produces
The form of product.
The present invention be referring to according to the method for the embodiment of the present invention, the process of equipment (system) and computer program product
Figure and/or block diagram describe.It should be understood that every one stream in flowchart and/or the block diagram can be realized by computer program instructions
The combination of process and/or box in journey and/or box and flowchart and/or the block diagram.It can provide these computer programs
Instruct the processor of general purpose computer, special purpose computer, Embedded Processor or other programmable data processing devices to produce
A raw machine, so that being generated by the instruction that computer or the processor of other programmable data processing devices execute for real
The device for the function of being specified in present one or more flows of the flowchart and/or one or more blocks of the block diagram.
The application can describe in the general context of computer-executable instructions executed by a computer, such as program
Module.Generally, program module includes routines performing specific tasks or implementing specific abstract data types, programs, objects, group
Part, data structure etc..The application can also be practiced in a distributed computing environment, in these distributed computing environments, by
Task is executed by the connected remote processing devices of communication network.In a distributed computing environment, program module can be with
In the local and remote computer storage media including storage equipment.
These computer program instructions, which may also be stored in, is able to guide computer or other programmable data processing devices with spy
Determine in the computer-readable memory that mode works, so that it includes referring to that instruction stored in the computer readable memory, which generates,
Enable the manufacture of device, the command device realize in one box of one or more flows of the flowchart and/or block diagram or
The function of being specified in multiple boxes.
These computer program instructions also can be loaded onto a computer or other programmable data processing device, so that counting
Series of operation steps are executed on calculation machine or other programmable devices to generate computer implemented processing, thus in computer or
The instruction executed on other programmable devices is provided for realizing in one or more flows of the flowchart and/or block diagram one
The step of function of being specified in a box or multiple boxes.
In a typical configuration, calculating equipment includes one or more processors (CPU), input/output interface, net
Network interface and memory.
Memory may include the non-volatile memory in computer-readable medium, random access memory (RAM) and/or
The forms such as Nonvolatile memory, such as read-only memory (ROM) or flash memory (flash RAM).Memory is computer-readable medium
Example.
Computer-readable medium includes permanent and non-permanent, removable and non-removable media can be by any method
Or technology come realize information store.Information can be computer readable instructions, data structure, the module of program or other data.
The example of the storage medium of computer includes, but are not limited to phase change memory (PRAM), static random access memory (SRAM), moves
State random access memory (DRAM), other kinds of random access memory (RAM), read-only memory (ROM), electric erasable
Programmable read only memory (EEPROM), flash memory or other memory techniques, read-only disc read only memory (CD-ROM) (CD-ROM),
Digital versatile disc (DVD) or other optical storage, magnetic cassettes, tape magnetic disk storage or other magnetic storage devices
Or any other non-transmission medium, can be used for storage can be accessed by a computing device information.As defined in this article, it calculates
Machine readable medium does not include temporary computer readable media (transitory media), such as the data-signal and carrier wave of modulation.
It should also be noted that, the terms "include", "comprise" or its any other variant are intended to nonexcludability
It include so that the process, method, commodity or the equipment that include a series of elements not only include those elements, but also to wrap
Include other elements that are not explicitly listed, or further include for this process, method, commodity or equipment intrinsic want
Element.In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that including described want
There is also other identical elements in the process, method of element, commodity or equipment.
All the embodiments in this specification are described in a progressive manner, same and similar portion between each embodiment
Dividing may refer to each other, and each embodiment focuses on the differences from other embodiments.Especially for system reality
For applying example, since it is substantially similar to the method embodiment, so being described relatively simple, related place is referring to embodiment of the method
Part explanation.
The above description is only an example of the present application, is not intended to limit this application.For those skilled in the art
For, various changes and changes are possible in this application.All any modifications made within the spirit and principles of the present application are equal
Replacement, improvement etc., should be included within the scope of the claims of this application.
Claims (16)
1. a kind of chipset based on optical Kerr effect helps light phase modulation method, it is characterised in that the described method includes:
Step 1: injecting high power X-band in a certain section of transmission waveguide of integrated chip optical path drives light;
Step 2: driving light causes nonlinear optics Kerr effect, change transmission waveguide effective refractive index;
Step 3: effective refractive index variation influences the Y band signal light transmitted in the waveguide, its phase is made to change, realized
Light field regulation.
2. the chipset according to claim 1 based on optical Kerr effect helps light phase modulation method, feature exists
In by the High Speed Modulation of dual wavelength optical directional coupler realization integrated chip optical path, concrete methods of realizing includes:
Step 1.1, high power driving light are introduced by upper arm waveguide, are coupled into lower arm waveguide by evanescent wave;
Step 1.2, signal light are introduced by lower arm waveguide, directly pass through waveguide;
Step 1.3, driving light cause non-linear Kerr effect in lower arm waveguide, are modulated to signal light phase;
Step 1.4, the coupling length of optical directional coupler and waveguide line space design to drive coupling of the light between two waveguides
Coefficient reaches maximum, the coefficient of coup of the signal light between two waveguides reaches minimum.
3. the chipset according to claim 1 or 2 based on optical Kerr effect helps light phase modulation method, feature
It is, realizes that All-optical signal interference especially quantum signal is interfered by quantum inteferometer, concrete methods of realizing includes:
Step 2.1, X-band driving light pass through the incoming carrier waveguide of photon crystal grating coupler;
Step 2.2, Y band signal light enter transmission waveguide by photon crystal grating coupler, and by multi-mode interferometer point
From extremely multiple optical paths;
Step 2.3, multichannel driving light can be coupled into the transmission waveguide of each optical path via dual wavelength optical beam splitter, and
Modulating action is generated to signal light phase;
Step 2.4, remnant drive light are coupled through another dual wavelength optical directional coupler and are exported;
Step 2.5, signal light phase modulation speed are determined that phase modulation depth is by driving light peak work by driving light repetition rate
Rate determines;
Step 2.6 is exported by each road signal of phase-modulation through multi-mode interferometer, the light intensity in multi-mode interferometer output arm
Distribution or probability distribution are codetermined by each road driving signal, realize full photocontrol integrated optical chip system with this, and measuring
Sub- optical field realizes multi-photon interference, Path selection quantum key distribution.
4. the chipset according to claim 3 based on optical Kerr effect helps light phase modulation method, feature exists
In X-band driving light is impulse code in the step 2.1.
5. the chipset according to claim 3 based on optical Kerr effect helps light phase modulation method, feature exists
In Y band signal light is point symbol in the step 2.2.
6. the chipset according to claim 1 based on optical Kerr effect helps light phase modulation method, feature exists
In, the modulator approach based on the material of integrated chip optical path include for crystalline silicon, amorphous silicon, high refractive index quartz, nitridation
One of silicon, silicon carbide, chalcogenide glass, aluminum gallium arsenide are a variety of, in driving light X-band nonlinear factor with higher;Wave
Guide structure has lower transmission loss with stronger limit light ability, in Y wave band in X-band.
7. the chipset according to claim 1 based on optical Kerr effect helps light phase modulation method, feature exists
In the modulator approach can be used to realize the High Speed Modulation of phase, can also realize intensity using structures such as optical interdferometers
Modulation, time-modulation.
8. the chipset based on optical Kerr effect helps light phase modulation method as described in claim 1, which is characterized in that institute
Stating modulator approach can be applied to various waveguiding structures, and cross-sectional structure is designed for driving light, with the smallest
Full vector effective core area, signal light obtain the phase change of (0, π) in driving optical power as small as possible.
9. the chipset based on optical Kerr effect helps light phase modulation method according to claim 1, which is characterized in that
Light is driven to introduce nonlinear effect in optical phase change material in the method;It is rolled over as the phase-change material of waveguide cores or covering
The rate of penetrating changes;The signal light transmitted in waveguide generates phase shift.
10. it is a kind of realize that the chipset as described in claim 1-9 based on optical Kerr effect helps light phase modulation method
System, which is characterized in that the system comprises:
It drives light to introduce unit, drives light for injecting high power X-band in a certain section of transmission waveguide of integrated chip optical path, drive
Dynamic light introduces nonlinear effect in optical phase change material;Phase-change material refractive index as waveguide cores or covering changes
Become;The signal light transmitted in waveguide generates phase shift;
Waveguide index changes unit, for driving light to cause nonlinear optics Kerr effect, changes transmission waveguide and effectively reflects
Rate;
Light field regulates and controls unit, changes the Y band signal light for influencing to transmit in the waveguide for effective refractive index, its phase occurs
Change, realizes light field regulation.
11. system according to claim 10, which is characterized in that the system based on integrated chip optical path material packet
It includes as one of crystalline silicon, amorphous silicon, high refractive index quartz, silicon nitride, silicon carbide, chalcogenide glass, aluminum gallium arsenide or a variety of,
Drive light X-band nonlinear factor with higher;Waveguiding structure has in X-band with stronger limit light ability, in Y wave band
Lower transmission loss.
12. system according to claim 10, which is characterized in that the system can be used to realize the high velocity modulation of phase
System can also realize intensity modulated, time-modulation using structures such as optical interdferometers.
13. system according to claim 10, which is characterized in that the system can be applied to various waveguiding structures, horizontal
Cross section structure is designed for driving light, and with the smallest full vector effective core area, signal light is as small as possible
Driving optical power in the case of obtain (0, π) phase change.
14. system according to claim 10, which is characterized in that the system is real by dual wavelength optical directional coupler
The High Speed Modulation of existing integrated chip optical path, comprising: high power driving light is introduced by upper arm waveguide, is coupled into down by evanescent wave
Arm waveguide;Signal light is introduced by lower arm waveguide, directly passes through waveguide;Driving light causes non-linear Ke Er effect in lower arm waveguide
It answers, signal light phase is modulated;The coupling length and waveguide line space design of optical directional coupler to drive light two
The coefficient of coup between waveguide reaches maximum, the coefficient of coup of the signal light between two waveguides reaches minimum.
15. system according to claim 10, which is characterized in that the system realizes All-optical signal by quantum inteferometer
Interference especially quantum signal is interfered, comprising: X-band drives light to pass through the incoming carrier waveguide of photon crystal grating coupler;Y wave
Segment signal light enters transmission waveguide by photon crystal grating coupler, and separates by multi-mode interferometer to multiple optics roads
Diameter;Multichannel driving light can be coupled into the transmission waveguide of each optical path via dual wavelength optical beam splitter, and to signal light
Phase generates modulating action;Remnant drive light is coupled through another dual wavelength optical directional coupler and is exported;Signal light phase modulation
Speed is determined that phase modulation depth is by driving photopeak value power decision by driving light repetition rate;By each road of phase-modulation
Signal is exported through multi-mode interferometer, and the light distribution or probability distribution in multi-mode interferometer output arm are total to by each road driving signal
With decision, full photocontrol integrated optical chip system is realized with this, and realize that multi-photon interference, path are selected in quantum optices field
Select quantum key distribution.
16. a kind of computer readable storage medium, is stored thereon with computer program, power is realized when which is executed by processor
Benefit requires the step of any one of 1-9 the method.
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