CN114005916A - Micro light-emitting diode and display panel - Google Patents
Micro light-emitting diode and display panel Download PDFInfo
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- CN114005916A CN114005916A CN202111281925.4A CN202111281925A CN114005916A CN 114005916 A CN114005916 A CN 114005916A CN 202111281925 A CN202111281925 A CN 202111281925A CN 114005916 A CN114005916 A CN 114005916A
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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Abstract
The invention discloses a miniature light-emitting diode and a display panel, wherein the miniature light-emitting diode comprises a semiconductor layer, at least two first electrodes and at least two second electrodes, wherein the polarities of the first electrodes and the second electrodes are opposite, and the first electrodes and the second electrodes are respectively connected with the semiconductor layer; the first electrode and the second electrode are adjacent along the first direction, and the first electrode and the second electrode are adjacent along the second direction; wherein the first direction and the second direction intersect. According to the invention, the micro light-emitting diode comprises at least two first electrodes and at least two second electrodes, so that the problem that the electrodes of the micro light-emitting diode are disconnected with the substrate when the micro light-emitting diode is bent is avoided, and the bonding rate of the micro light-emitting diode in the display panel is improved.
Description
Technical Field
The invention relates to the technical field of display, in particular to a micro light-emitting diode and a display panel.
Background
At present, Micro Light Emitting Diode (Micro LED) display panels are increasingly receiving attention from the display market due to their advantages of high brightness, low operating voltage, low power consumption, long service life, impact resistance, stable performance, and the like.
However, the electrodes of the micro light emitting diode are designed into a strip or block shape, and only include two electrodes, a P electrode and an N electrode, when the substrate deforms, the electrodes and the substrate may be separated and disconnected, and the disconnection of one of the two electrodes may cause the failure of the connection between the micro light emitting diode and the substrate, that is, the connection rate of the micro light emitting diode in the display panel is affected, thereby affecting the overall light emitting effect of the display panel.
Disclosure of Invention
In view of the above, the present invention provides a micro light emitting diode and a display panel, in which a micro light emitting diode is provided with at least two first electrodes and at least two second electrodes, so as to avoid the problem that the electrodes of the micro light emitting diode are disconnected from a substrate requiring electrical connection when the micro light emitting diode is bent, and improve the bonding rate of the micro light emitting diode in the display panel.
In one aspect, the invention provides a micro light emitting diode, which comprises a semiconductor layer, and further comprises at least two first electrodes and at least two second electrodes, wherein the polarities of the first electrodes and the second electrodes are opposite, and the first electrodes and the second electrodes are respectively connected with the semiconductor layer;
the first electrode and the second electrode are adjacent along a first direction, and the first electrode and the second electrode are adjacent along a second direction;
wherein the first direction and the second direction intersect.
In yet another aspect, the present invention provides a display panel, including a substrate including a plurality of bonding pins;
the miniature light emitting diode is electrically connected with the binding pin and comprises any one of the miniature light emitting diodes provided by the application.
Compared with the prior art, the micro light-emitting diode and the display panel provided by the invention have the advantages that the micro light-emitting diode comprises a semiconductor layer, at least two first electrodes and at least two second electrodes, wherein the polarities of the first electrodes and the second electrodes are opposite, and the first electrodes and the second electrodes are respectively connected with the semiconductor layer; the first electrode is adjacent to the second electrode along the first direction, and the first electrode is adjacent to the second electrode along the second direction, so that the normal connection between at least one first electrode and one second electrode of each micro light-emitting diode and the substrate is ensured no matter whether the substrate is bent along the first direction or the second direction, and the bonding rate of the micro light-emitting diodes in the display panel is improved.
Of course, it is not necessary for any product in which the present invention is practiced to specifically achieve all of the above technical effects simultaneously.
Other features of the present invention and advantages thereof will become apparent from the following detailed description of exemplary embodiments thereof, which proceeds with reference to the accompanying drawings.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description, serve to explain the principles of the invention.
FIG. 1 is a schematic structural diagram of a micro light emitting diode in the prior art;
FIG. 2 is a cross-sectional view taken along line N-N' of FIG. 1;
FIG. 3 is a further sectional view taken along line N-N' of FIG. 1;
FIG. 4 is a schematic structural diagram of a micro light emitting diode according to the present invention;
FIG. 5 is a schematic structural diagram of another micro light emitting diode provided in the present invention;
FIG. 6 is a schematic structural diagram of another micro light emitting diode provided in the present invention;
FIG. 7 is a cross-sectional view taken along line I-I' of FIG. 6;
FIG. 8 is a cross-sectional view taken along line J-J' of FIG. 6;
FIG. 9 is a cross-sectional view taken along line M-M' of FIG. 5;
FIG. 10 is a schematic structural diagram of another micro light emitting diode provided in the present invention;
FIG. 11 is a cross-sectional view taken along line Q-Q' of FIG. 10;
FIG. 12 is a further cross-sectional view taken along line M-M' of FIG. 5;
FIG. 13 is a cross-sectional view taken along line W-W' of FIG. 5;
FIG. 14 is a further cross-sectional view taken along line W-W' of FIG. 5;
FIG. 15 is a further cross-sectional view taken along line M-M' of FIG. 5;
fig. 16 is a schematic structural diagram of a display panel according to the present invention;
fig. 17 is a cross-sectional view taken along line E-E' of fig. 16.
Detailed Description
Various exemplary embodiments of the present invention will now be described in detail with reference to the accompanying drawings. It should be noted that: the relative arrangement of the components and steps, the numerical expressions and numerical values set forth in these embodiments do not limit the scope of the present invention unless specifically stated otherwise.
The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the invention, its application, or uses.
Techniques, methods, and apparatus known to those of ordinary skill in the relevant art may not be discussed in detail, but are intended to be part of the specification where appropriate.
In all examples shown and discussed herein, any particular value should be construed as merely illustrative, and not limiting. Thus, other examples of the exemplary embodiments may have different values.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, further discussion thereof is not required in subsequent figures.
Referring to fig. 1 and 2, fig. 1 is a schematic structural diagram of a micro light emitting diode in the prior art, fig. 2 is a cross-sectional view along the direction N-N 'in fig. 1, and fig. 3 is another cross-sectional view along the direction N-N' in fig. 1, wherein fig. 2 and 3 illustrate a positional relationship between a substrate and the micro light emitting diode in different states. The prior art provides a micro light emitting diode 100 comprising: the display panel is provided with a semiconductor layer 03 and a first electrode 01 and a second electrode 02 which are positioned on the semiconductor layer 03, when the display panel is combined with the micro light-emitting diode 100, the micro light-emitting diode 100 needs to be arranged to be electrically connected with a connecting substrate 00 in the display panel, and the substrate 00 provides carriers for the micro light-emitting diode 100 so that the micro light-emitting diode 100 can normally emit light. However, as shown in fig. 3, when the substrate 00 deforms, the substrate 00 and a portion of the first electrode 01 of the micro light emitting diode 100 may be disconnected, and/or the second electrode 02 may be disconnected, and no matter whether the first electrode 01 or the second electrode 02 is disconnected from the substrate 00, carriers provided by the substrate 00 cannot be transmitted to, that is, the micro light emitting diode 100 and the substrate 00 are disconnected, and light cannot be emitted, so that the bonding rate of the micro light emitting diode 100 in the display panel 100 is reduced.
In order to solve the above technical problems, the present invention provides a micro light emitting diode and a display panel. The embodiments of the micro light emitting diode and the display panel provided by the invention are described in detail below.
In this embodiment, please refer to fig. 4, fig. 4 is a schematic structural diagram of a micro light emitting diode provided by the present invention, and fig. 4 only takes the case where the micro light emitting diode includes three first electrodes 20 and three second electrodes 30, but is not limited thereto and may be configured according to practical situations. The micro light emitting diode 200 in this embodiment: the semiconductor device comprises a semiconductor layer 10, and further comprises at least two first electrodes 20 and at least two second electrodes 30, wherein the polarities of the first electrodes 20 and the polarities of the second electrodes 30 are opposite, and the first electrodes 20 and the second electrodes 30 are respectively connected with the semiconductor layer 10; the first electrode 20 and the second electrode 30 are adjacent in the first direction X, and the first electrode 20 and the second electrode 30 are adjacent in the second direction Y; wherein the first direction X and the second direction Y intersect.
The first electrode 20 and the second electrode 30 may be a P-type electrode and an N-type electrode, respectively, the first electrode 20 is a P-type electrode, and the second electrode 30 is an N-type electrode, or vice versa.
It is understood that the micro light emitting diode 200 in the present embodiment includes the semiconductor layer 10, and further includes the first electrode 20 and the second electrode 30, and the polarities of the first electrode 20 and the second electrode 30 are opposite. The first electrode 20 and the second electrode 30 are a P-type electrode and an N-type electrode, respectively, and when the micro light emitting diode 200 is bonded to a subsequent display panel, the micro light emitting diode 200 is required to be connected to a substrate in the display panel, and the substrate provides a first type carrier and a second type carrier to the micro light emitting diode 200, wherein the first type carrier and the second type carrier are an electron and a hole, respectively. The first type carrier provided by the substrate is transferred to the semiconductor layer 10 through the first electrode 20, and the second type carrier provided by the substrate is transferred to the semiconductor layer 10 through the second electrode 30, so that the first type carrier and the second type carrier are recombined in the semiconductor layer 10 to emit light beams, thereby ensuring that the micro light emitting diode 200 emits light normally. In order to prevent the problem that the micro light emitting diode 200 cannot normally emit light due to the first electrode 20 and the second electrode 30 being disconnected from the substrate when the substrate is bent and deformed, in the embodiment, the micro light emitting diode 200 includes at least two first electrodes 20 and at least two second electrodes 30, and the first electrodes 20 and the second electrodes 30 are adjacent to each other along the first direction X, and the first electrodes 20 and the second electrodes 30 are adjacent to each other along the second direction Y, and the first direction X intersects the second direction Y, that is, the first electrodes 20 and the second electrodes 30 are alternately disposed in the micro light emitting diode 200, so that when the substrate is bent along the first direction X, a portion of the first electrodes 20 and a portion of the second electrodes 30 can still be ensured to be normally connected to the substrate because the substrate is not deformed along the second direction Y, or when the substrate is bent along the second direction Y, a portion of the substrate is not deformed along the first direction X can still be ensured to be normally connected to the first electrodes 20 and the second electrodes 30 And (4) connecting. Therefore, no matter the substrate is bent along any direction of the first direction X or the second direction Y, at least one first electrode 20 and one second electrode 30 can be ensured to be normally connected with the substrate, so that the bonding rate of the micro light-emitting diode 200 can be ensured, namely, the micro light-emitting diode 200 can be ensured to normally emit light.
In some alternative embodiments, referring to fig. 5, fig. 5 is a schematic structural diagram of a micro light emitting diode according to the present invention. The micro light emitting diode 200 provided in this embodiment includes two first electrodes 20 and two second electrodes 30, and the first direction X is perpendicular to the second direction Y.
It can be understood that, with reference to fig. 6 to 8, fig. 6 is a schematic structural view of another micro light emitting diode according to the present invention, fig. 6 is only a schematic view of 9 micro light emitting diodes 200 disposed on a substrate, fig. 7 is a cross-sectional view taken along the direction I-I 'in fig. 6, and fig. 8 is a cross-sectional view taken along the direction J-J' in fig. 6, wherein fig. 7 and 8 illustrate a situation when the substrate is bent along the U-bending axis. The micro light emitting diode 200 provided in this embodiment includes two first electrodes 20 and two second electrodes 30, the first electrodes 20 and the second electrodes 30 are adjacent to each other along the first direction X, and the first electrodes 20 and the second electrodes 30 are adjacent to each other along the second direction Y; the first direction X and the second direction Y are perpendicular. It can be further understood that the connection line of the two first electrodes 20 in the micro light emitting diode 200 overlaps the center point of the micro light emitting diode 200 at the intersection point of the connection line of the two second electrodes 30, that is, the two first electrodes 20 with the same polarity are located on the diagonal line of the micro light emitting diode 200, and the two second electrodes 30 with the same polarity are also located on the diagonal line of the micro light emitting diode 200, as shown in fig. 6 to 8, it is assumed that the bending axis U of the substrate 00 extends along the second direction Y, which results in the separation of the individual electrodes of the micro light emitting diode 200 located on both sides along the first direction X and the substrate 00 as shown in fig. 6, but since the bending axis U extends along the second direction Y, that is, the substrate 00 is not affected by the bending of the substrate in the second direction Y, as shown in fig. 8, the micro light emitting diode 200 can be normally connected to the substrate 00 along the second direction Y, furthermore, although some electrodes of the micro light emitting diode 200 on the substrate 00 are separated from the substrate, at least one first electrode 20 and one second electrode normally connected to the substrate 00 still exist, and on the contrary, when the bending axis of the substrate 00 extends along the first direction X, basically the same principle as the above is applied, so that the micro light emitting diode 200 on the substrate 00 along the first direction X can be normally connected to the substrate 00, and the micro light emitting diode 200 can normally emit light, thereby ensuring that the first electrode 20 and the second electrode 30 in the other direction can still be normally connected to the substrate, and ensuring that the micro light emitting diode 200 can normally emit light, and further improving the bonding rate of the micro light emitting diode 200, regardless of the fact that the substrate electrically connected to the subsequent micro light emitting diode 200 is bent along the first direction X or the second direction Y. Therefore, the micro light emitting diode 200 provided by the embodiment can ensure that the at least one first electrode 20 and the at least one second electrode 30 are normally connected with the substrate when the substrate is bent and deformed, ensure that the micro light emitting diode 200 is normally connected, and improve the bonding rate.
In some alternative embodiments, and with continued reference to fig. 5 and 9, fig. 9 is a cross-sectional view taken along line M-M' of fig. 5. The micro light emitting diode 200 provided in this embodiment: the first electrode 20 and the second electrode 30 are located on the same side of the semiconductor layer 10.
It can be understood that the micro light emitting diode 200 provided in this embodiment is a horizontal micro light emitting diode 200, the first electrode 20 and the second electrode 30 are located on the same side of the semiconductor layer 10, further, the first electrode 20 and the second electrode 30 are located on a side of the semiconductor layer 10 close to a substrate in the display panel, and both the first electrode 20 and the second electrode 30 can be directly connected to a lead on the substrate. Based on the horizontal micro light emitting diode 200, the micro light emitting diode 200 comprises two first electrodes 20 and two second electrodes 30, the first electrodes 20 and the second electrodes 30 are adjacent to each other along the first direction X, and the first electrodes 20 and the second electrodes 30 are adjacent to each other along the second direction Y; the first direction X is perpendicular to the second direction Y, so that when the substrate is bent and deformed, at least one of the first electrode 20 and the second electrode 30 can be ensured to be normally connected with the substrate, the miniature light emitting diode 200 can be ensured to be normally connected, and the bonding rate can be improved.
In some alternative embodiments, referring to fig. 10 and fig. 11, fig. 10 is a schematic structural view of another micro light emitting diode provided by the present invention, and fig. 11 is a cross-sectional view taken along direction Q-Q' of fig. 10. The micro light emitting diode provided by the embodiment is a vertical micro light emitting diode, and in a direction Z in which the semiconductor layer 10 points to the first electrode 20, the first electrode 20 and the second electrode 30 are respectively located at two sides of the semiconductor layer 10, wherein the first electrode 20 is located at one side close to the substrate in the display panel, and the first electrode 20 is connected with a pin on the substrate in the display panel, so as to connect a chip, and the second electrode 20 is connected with the chip in the display panel through a wire. Further, the micro light emitting diode 200 is arranged to include two first electrodes 20 and two second electrodes 30, the first electrodes 20 and the second electrodes 30 are adjacent to each other along the first direction X, and the first electrodes 20 and the second electrodes 30 are adjacent to each other along the second direction Y; wherein the first direction X and the second direction Y are perpendicular. Based on this structure, when the substrate is bent and deformed, the first electrode 20 is squeezed, and then the second electrode 30 is squeezed relatively, so that the pressure between the second electrode 30 and other adjacent substrates is increased, and the problem of alignment failure caused by the sliding of the micro light emitting diode 200 due to the radian of the substrate when the substrate is bent and deformed can be effectively prevented.
In some alternative embodiments, continuing with fig. 5 and fig. 12 and 13, fig. 12 is a further cross-sectional view along M-M 'of fig. 5, and fig. 13 is a cross-sectional view along W-W' of fig. 5. The micro light emitting diode 200 provided by the embodiment comprises a semiconductor layer 10 comprising a light emitting layer 11, wherein the light emitting layer 11 comprises a first sub light emitting layer 11a and a second sub light emitting layer 11 b; the two first electrodes 20 are respectively a first electrode 20a and a first second electrode 20b, in the third direction Z, the first sub-luminescent layer 11a at least partially overlaps the first electrode 20a, and the second sub-luminescent layer 11b at least partially overlaps the first second electrode 20b, the first sub-luminescent layer 11a and the second sub-luminescent layer 11b are connected; the third direction Z is a direction in which the first electrode 20 points to the light-emitting layer 11, and the third direction can also be understood as a side in which a backlight surface of the micro light-emitting diode 200 points to the light-emitting surface.
It is understood that the micro light emitting diode 200 provided in this embodiment includes the semiconductor layer 10 including the light emitting layer 11, and the light emitting layer 11 includes a Multiple Quantum Well (MQW) structure or a Quantum Well (QW) structure, which is not limited by the invention. The light emitting layer 11 includes a first sub light emitting layer 11a and a second sub light emitting layer 11b, the first sub light emitting layer 11a and the second sub light emitting layer 11b being connected; the two first electrodes 20 are respectively a first A electrode 20a and a first B electrode 20b, the first sub-emitting layer 11a is at least partially overlapped with the first A electrode 20a, the first A electrode 20a transfers the first type carriers provided by the substrate to the first sub-emitting layer 11a, the second electrode 30 transfers the second type carriers to the first sub-emitting layer 11a, and the first sub-emitting layer 11a and the second sub-emitting layer 11b are integrated due to the connection of the first sub-emitting layer 11a and the second sub-emitting layer 11b, so that the first type carriers and the second type carriers can be combined in the whole emitting layer 11 to emit light beams, thereby ensuring the normal light emission of the micro light emitting diode 200. Similarly, the second sub-emitting layer 11b and the first second electrode 20b are at least partially overlapped, the first second electrode 20b transfers the first type carriers provided by the substrate to the second sub-emitting layer 11b, the second electrode 30 transfers the second type carriers to the second sub-emitting layer 11b, and the first sub-emitting layer 11a and the second sub-emitting layer 11b are integrated due to the connection of the first sub-emitting layer 11a and the second sub-emitting layer 11b, i.e. the first type carriers and the second type carriers can be recombined in the entire light-emitting layer 11 to emit light beams, thereby ensuring the normal light emission of the micro light-emitting diode 200. Therefore, no matter any one of the first electrode 20a or the first second electrode 20b can transmit the first type carriers to the entire light emitting layer 11 through the corresponding sub-light emitting layer, and the second electrode 30 transmits the second type carriers to the light emitting layer 11, so that the first type carriers and the second type carriers are recombined in the entire light emitting layer 11 to emit light beams, the micro light emitting diode 200 can be ensured to emit light normally. Therefore, when the substrate is bent and deformed, no matter how many first electrodes 20 in the micro light emitting diode 200 are normally connected with the substrate, the whole light emitting layer 11 in the micro light emitting diode 200 can be ensured to normally emit light, and the light emitting area of the micro light emitting diode 200 is ensured.
In some alternative embodiments, shown in conjunction with fig. 5, 12 and 14, fig. 14 is a further cross-sectional view taken along the direction W-W' in fig. 5. The micro light emitting diode 200 provided by the embodiment comprises a semiconductor layer 10 comprising a light emitting layer 11, wherein the light emitting layer 11 comprises a first sub light emitting layer 11a and a second sub light emitting layer 11 b; the two first electrodes 20 are a first A electrode 20a and a first B electrode 20b respectively; in the third direction Z, the first sub-emission layer 11a at least partially overlaps the first a electrode 20a, and the second sub-emission layer 11b at least partially overlaps the first b electrode 20b, with a gap between the first sub-emission layer 11a and the second sub-emission layer 11 b; the third direction Z is a direction in which the first electrode 20 points to the light-emitting layer 11, and the third direction can also be understood as a side in which a backlight surface of the micro light-emitting diode 200 points to the light-emitting surface.
It is understood that the micro light emitting diode 200 provided in this embodiment includes the semiconductor layer 10 including the light emitting layer 11, and the light emitting layer 11 includes a Multiple Quantum Well (MQW) structure or a Quantum Well (QW) structure, which is not limited by the invention. The light emitting layer 11 includes a first sub light emitting layer 11a and a second sub light emitting layer 11b with a gap therebetween; the two first electrodes 20 are a first electrode 20a and a first second electrode 20b, respectively, the first sub-emitting layer 11a is at least partially overlapped with the first electrode 20a, the first electrode 20a transfers the first type carriers provided by the substrate to the first sub-emitting layer 11a, the second electrode 30 transfers the second type carriers to the first sub-emitting layer 11a, so that the first type carriers and the second type carriers combine with the first sub-emitting layer 11a to emit light beams, and similarly, the second sub-emitting layer 11b is at least partially overlapped with the first second electrode 20b, the first second electrode 20b transfers the first type carriers provided by the substrate to the second sub-emitting layer 11b, and the second electrode 30 transfers the second type carriers to the second sub-emitting layer 11b, so that the first type carriers and the second type carriers combine with each other to emit light beams. On one hand, the micro light emitting diode 200 provided in this embodiment is equivalent to combining two micro light emitting diodes in the prior art, which can not only ensure the resolution of the micro light emitting diode 200 in the display panel, but also increase the area of the micro light emitting diode 200, and is beneficial to aligning the micro light emitting diode to the substrate in the manufacturing process of the display panel, thereby improving the transfer efficiency of the micro light emitting diode. On the other hand, the micro light emitting diode 200 provided in this embodiment can ensure that the micro light emitting diode 200 emits light as long as any one set of the first electrode 20 and the second electrode 30 of the two first electrodes 20 and the two second electrodes 30 is connected to the substrate, and when the first electrode is a P-type electrode and the second electrode is an N-type electrode, and only one N-type electrode is open, the remaining N-type electrode connected normally can match with the two P-type electrodes, so that both the first sub-light emitting layer 11a and the second sub-light emitting layer 11 can emit light normally, and the light emitting area of the micro light emitting diode 200 is ensured.
In some alternative embodiments, and as shown in continued reference to FIG. 15, FIG. 15 is a cross-sectional view taken along line M-M' of FIG. 5. In the micro light emitting diode 200 provided in this embodiment, in a direction Z in which the first electrode 20 points to the semiconductor layer 10, the semiconductor layer 10 sequentially includes a first semiconductor layer 12, a light emitting layer 11, and a second semiconductor layer 13, the first electrode 20 is connected to the first semiconductor layer 12, and the second electrode 30 is connected to the second semiconductor layer 13; the second semiconductor layer 13 includes a first region a1 and a second region a2, an orthogonal projection of the first region a1 on the plane of the first semiconductor layer 12 at least partially overlaps an orthogonal projection of the light-emitting layer 11 on the plane of the first semiconductor layer 12, and an orthogonal projection of the second region a2 on the plane of the first semiconductor layer 12 does not overlap an orthogonal projection of the light-emitting layer 11 on the plane of the first semiconductor layer 12; the area of the first region a1 is equal to or greater than the area of the second region a 2.
It can be understood that, in the micro light emitting diode 200 provided in this embodiment, the semiconductor layer 10 includes a first semiconductor layer 12, a light emitting layer 11, and a second semiconductor layer 13 in sequence, the first electrode 20 is connected to the first semiconductor layer 12, and the second electrode 30 is connected to the second semiconductor layer 13; when the first electrode 20 is a P-type electrode and the second electrode is an N-type electrode, the first semiconductor layer 12 is a P-type doped semiconductor layer, the second semiconductor layer 13 is an N-type doped semiconductor layer, the first type carriers provided by the substrate are transmitted to the light emitting layer 11 sequentially through the first electrode 20 and the first semiconductor layer 12, the second type carriers provided are transmitted to the light emitting layer 11 sequentially through the second electrode 30 and the second semiconductor layer 13, so that the first type carriers and the second type carriers are combined with each other to emit light beams, and the micro light emitting diode 200 emits light. Based on the actual light emitting area of the micro light emitting diode 200, that is, the area occupied by the light emitting layer 11, the second semiconductor layer 13 is arranged to include a first region a1 and a second region a2, an orthographic projection of the first region a1 on the plane of the first semiconductor layer 12 at least partially overlaps with an orthographic projection of the light emitting layer 11 on the plane of the first semiconductor layer 12, and an orthographic projection of the second region a2 on the plane of the first semiconductor layer 12 does not overlap with an orthographic projection of the light emitting layer 11 on the plane of the first semiconductor layer 12; the first region a1 is a light emitting region of the micro light emitting diode 200, and the area of the first region a1 is larger than or equal to the area of the second region a2, that is, the area of the light emitting layer in the micro light emitting diode 200 is limited to be larger, so that the light emitting area in the micro light emitting diode 200 can be effectively increased.
In some alternative embodiments, and with continued reference to fig. 12, the present embodiment provides a micro light emitting diode 200: the first electrode 20 and the second electrode 30 are transparent conductive electrodes.
It can be understood that the micro light emitting diode 200 provided in the present embodiment may be a front-mounted micro light emitting diode 200 and a flip-chip micro light emitting diode 200, and fig. 12 only exemplifies that the micro light emitting diode 200 is the flip-chip micro light emitting diode 200, and no matter whether the micro light emitting diode 200 is the flip-chip micro light emitting diode 200 or the front-mounted micro light emitting diode 200, when the first electrode 20 and the second electrode 30 are transparent conductive electrodes, the light emitted from the light emitting layer 11 can be emitted to the micro light emitting diode without being blocked, and can also be diffused to the area where the second electrode 30 is located, so as to increase the light emitting area of the micro light emitting diode 200.
Alternatively, the first electrode 20 and the second electrode 30 are metal electrodes, and since the metal electrodes are non-light-transmissive devices, based on this, the two first electrodes 20 and the two second electrodes 30 in each micro light emitting diode 200 may be disposed at the edge of the diagonal of the micro light emitting diode 200, so as to maximally reduce the influence of the first electrodes 20 and the second electrodes 30 on the light emitting region.
The present invention further provides a display panel 300, which is combined with fig. 16 and 17, wherein fig. 16 is a schematic structural diagram of the display panel provided by the present invention, and fig. 17 is a cross-sectional view along direction E-E' in fig. 16. The display panel 300 provided in the present embodiment includes: a substrate 310, the substrate 310 including a plurality of bonding pins 320; the micro light emitting diode 200, the micro light emitting diode 200 and the bonding pin 320 are electrically connected, and the micro light emitting diode 300 is the micro light emitting diode 200 provided in any of the above embodiments of the present invention. The embodiment of fig. 16 only takes a mobile phone as an example, and the display panel 300 is described, it is understood that the display panel 300 provided in the embodiment of the present invention may be other display panels with a display function, such as a computer, a television, a vehicle-mounted display panel, and the present invention is not limited thereto.
It is understood that the display panel 300 provided in the present embodiment is provided with the micro light emitting diode 200 electrically connected to the bonding pin 320 on the substrate 310, and the substrate 310 provides the micro light emitting diode with a first type carrier and a second type carrier through the bonding pin 320, wherein the first type carrier and the second type carrier are electrons and holes, respectively. The first type carrier provided by the substrate 310 is transferred to the first electrode 20 through the bonding pin 320a, and finally transferred to the light emitting layer 11, and the second type carrier provided by the substrate 310 is transferred to the second electrode 30 through the bonding pin 320b, and finally transferred to the light emitting layer 11, so that the first type carrier and the second type carrier are recombined in the semiconductor layer 10 to emit a light beam, thereby ensuring that the micro light emitting diode 200 emits light normally. And since the micro light emitting diode 200 normally emits light and includes at least two first electrodes 20 and at least two second electrodes 30, the first electrodes 20 and the second electrodes 30 are adjacent to each other along the first direction X, and the first electrodes 20 and the second electrodes 30 are adjacent to each other along the second direction Y, that is, the first electrodes 20 and the second electrodes 30 are alternately disposed in the micro light emitting diode 200. On one hand, even if the micro light emitting diode 200 is turned during the die bonding process of the display panel 300, the micro light emitting diode 200 can be correctly bonded to the corresponding bonding pin 320 on the substrate 310, so that the micro light emitting diode 200 can normally emit light, and the die bonding efficiency of the micro light emitting diode 200 in the display panel 300 can be improved. On the other hand, since the micro light emitting diodes 200 can be ensured to normally emit light as long as at least one first electrode 20 and one second electrode 30 in each micro light emitting diode 200 are ensured to be normally connected with the substrate 310, when the individual electrodes in the micro light emitting diodes 200 are disconnected, the micro light emitting diodes 200 can be ensured to normally emit light, and thus, the bonding rate of the micro light emitting diodes 200 in the display panel 300 can be improved.
In some alternative embodiments, as shown in fig. 16 and 17, the present embodiment provides the display panel 300, wherein the substrate 310 is a flexible substrate.
It can be understood that, in the display panel 300 provided by the present embodiment, since the micro light emitting diode 200 normally emits light and includes at least two first electrodes 20 and at least two second electrodes 30, and the first electrode 20 and the second electrode 30 are adjacent to each other along the first direction X, and the first electrode 20 and the second electrode 30 are adjacent to each other along the second direction Y, that is, the first electrode 20 and the second electrode 30 are alternately disposed in the micro light emitting diode 200, so that when the substrate 310 is bent along the first direction X, since the substrate 310 in the second direction Y is not deformed, it is still ensured that the first electrode 20 and the second electrode 30 are normally connected to the bonding pins 320 on the substrate 310, or, when the substrate 310 is bent in the second direction Y, the substrate 310 in the first direction X is not deformed, so that the first electrode 20 and the second electrode 30 are normally connected to the bonding pins 320 on the substrate 310. Therefore, no matter the substrate 310 is bent along any direction of the first direction X or the second direction Y, at least one first electrode 20 and one second electrode 30 in each micro light emitting diode 200 can be ensured to be normally connected with the substrate 310, and further, the micro light emitting diodes 200 can be ensured to normally emit light, so that the bonding rate of the micro light emitting diodes 200 in the display panel 300 can be improved.
In some alternative embodiments, as shown in fig. 16 and 17, in the display panel 300 provided in this embodiment, the bonding pins 320 include a first bonding pin 320a and a second bonding pin 320b, and in each micro light emitting diode 200, one first electrode 20 is connected to one first bonding pin 320a, and one second electrode 30 is connected to one second bonding pin 320 b.
It can be understood that in the display panel 300 provided in this embodiment, in each micro light emitting diode 200, one first electrode 20 is correspondingly connected to one first bonding pin 320a, and one second electrode 30 is correspondingly connected to one second bonding pin 320b, that is, each electrode is correspondingly connected to one bonding pin, and electrodes with the same polarity are not connected to one bonding pin, so that when any one bonding pin is bent along with the substrate 310 and is disconnected from the corresponding electrode, the bonding pin 320 corresponding to other electrodes is not affected, that is, only the bonding pin 320 at the position where the substrate 310 is deformed is separated from the corresponding electrode and is disconnected, the influence of the deformation of the substrate 310 on the micro light emitting diode 200 is reduced, and the bonding rate of the micro light emitting diode 200 in the display panel 300 is ensured.
Optionally, because the micro light emitting diode 200 in the display panel 300 provided by this embodiment includes at least two first electrodes 20 and at least two second electrodes 30, compared to the situation that the micro light emitting diode in the prior art only includes one first electrode and one second electrode, the area of the micro light emitting diode 200 provided by this embodiment is relatively large, which may further cause the number of the micro light emitting diodes 200 disposed in the limited space of the display panel 300 to decrease, and affect the resolution of the display panel 300, in order to solve the above problem, the area of the micro light emitting diode 200 provided by this embodiment may be set to be the same as the area of the micro light emitting diode in the prior art, that is, the area of each electrode in the micro light emitting diode 200 provided by this embodiment is made small to satisfy the regulation and control of the area of the micro light emitting diode 200, so that the number of the micro light emitting diodes 200 disposed in the display panel 300 may be ensured, the resolution of the display panel 300 is guaranteed.
According to the embodiment, the micro light-emitting diode and the display panel provided by the invention at least realize the following beneficial effects:
compared with the prior art, the micro light-emitting diode and the display panel provided by the invention have the advantages that the micro light-emitting diode comprises a semiconductor layer, at least two first electrodes and at least two second electrodes, wherein the polarities of the first electrodes and the second electrodes are opposite, and the first electrodes and the second electrodes are respectively connected with the semiconductor layer; the first electrode is adjacent to the second electrode along the first direction, and the first electrode is adjacent to the second electrode along the second direction, so that the normal connection between at least one first electrode and one second electrode of each micro light-emitting diode and the substrate is ensured no matter whether the substrate is bent along the first direction or the second direction, and the bonding rate of the micro light-emitting diodes in the display panel is improved.
Although some specific embodiments of the present invention have been described in detail by way of examples, it should be understood by those skilled in the art that the above examples are for illustrative purposes only and are not intended to limit the scope of the present invention. It will be appreciated by those skilled in the art that modifications may be made to the above embodiments without departing from the scope and spirit of the invention. The scope of the invention is defined by the appended claims.
Claims (10)
1. The micro light-emitting diode is characterized by comprising a semiconductor layer, at least two first electrodes and at least two second electrodes, wherein the polarities of the first electrodes and the polarities of the second electrodes are opposite, and the first electrodes and the second electrodes are respectively connected with the semiconductor layer;
the first electrode and the second electrode are adjacent along a first direction, and the first electrode and the second electrode are adjacent along a second direction;
wherein the first direction and the second direction intersect.
2. The micro light-emitting diode of claim 1, comprising two first electrodes and two second electrodes, wherein the first direction and the second direction are perpendicular.
3. The micro light-emitting diode of claim 2, wherein the first electrode and the second electrode are on a same side of the semiconductor layer.
4. The micro light-emitting diode of claim 3, wherein the semiconductor layer comprises a light-emitting layer comprising a first sub-light-emitting layer and a second sub-light-emitting layer;
the two first electrodes are respectively a first A electrode and a first B electrode;
in a third direction, the first sub-light-emitting layer at least partially overlaps the first A electrode, the second sub-light-emitting layer at least partially overlaps the first B electrode, and the first sub-light-emitting layer and the second sub-light-emitting layer are connected;
wherein the third direction is a direction in which the first electrode points to the light emitting layer.
5. The micro light-emitting diode of claim 3, wherein the semiconductor layer comprises a light-emitting layer comprising a first sub-light-emitting layer and a second sub-light-emitting layer;
the two first electrodes are respectively a first A electrode and a first B electrode;
in a third direction, the first sub-light-emitting layer at least partially overlaps the first A electrode, and the second sub-light-emitting layer at least partially overlaps the first B electrode, with a gap between the first sub-light-emitting layer and the second sub-light-emitting layer;
wherein the third direction is a direction in which the first electrode points to the light emitting layer.
6. The micro light-emitting diode according to claim 1, wherein the semiconductor layer comprises a first semiconductor layer, a light-emitting layer, and a second semiconductor layer in this order along a direction in which the first electrode points to the semiconductor layer, the first electrode is connected to the first semiconductor layer, and the second electrode is connected to the second semiconductor layer;
the second semiconductor layer comprises a first area and a second area, the orthographic projection of the first area on the plane of the first semiconductor layer is at least partially overlapped with the orthographic projection of the light-emitting layer on the plane of the first semiconductor layer, and the orthographic projection of the second area on the plane of the first semiconductor layer is not overlapped with the orthographic projection of the light-emitting layer on the plane of the first semiconductor layer;
the area of the first region is greater than or equal to the area of the second region.
7. The micro light-emitting diode of claim 1, wherein the first and second electrodes are transparent conductive electrodes.
8. A display panel, comprising:
a substrate comprising a plurality of binding pins;
and the micro light-emitting diode is electrically connected with the binding pin and is any one of the micro light-emitting diodes from the right 1 to the right 7.
9. The display panel according to claim 8, wherein the substrate is a flexible substrate.
10. The display panel according to claim 8, wherein the bonding pins comprise a first bonding pin and a second bonding pin, and in each of the micro light emitting diodes, one of the first electrodes is correspondingly connected to one of the first bonding pins, and one of the second electrodes is correspondingly connected to one of the second bonding pins.
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002280515A (en) * | 2001-03-19 | 2002-09-27 | Kyocera Corp | Semiconductor device |
| US20110114990A1 (en) * | 2009-11-16 | 2011-05-19 | Seoul Opto Device Co., Ltd. | Light emitting diode having electrode extensions for current spreading |
| US20110193799A1 (en) * | 2010-02-11 | 2011-08-11 | Samsung Mobile Display Co., Ltd. | Organic Light Emitting Diode Display and Manufacturing Method Thereof |
| CN108288661A (en) * | 2017-01-10 | 2018-07-17 | 英属开曼群岛商錼创科技股份有限公司 | Micro-led chip and display panel |
| US20190123243A1 (en) * | 2017-10-24 | 2019-04-25 | Xiamen Sanan Optoelectronics Technology Co., Ltd. | Light-Emitting Diode |
| US20200028028A1 (en) * | 2018-07-20 | 2020-01-23 | Pixeled Display Co., Ltd. | Micro light emitting device and display apparatus |
| WO2021115470A1 (en) * | 2019-12-13 | 2021-06-17 | 深圳第三代半导体研究院 | Light-emitting diode |
-
2021
- 2021-11-01 CN CN202111281925.4A patent/CN114005916A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002280515A (en) * | 2001-03-19 | 2002-09-27 | Kyocera Corp | Semiconductor device |
| US20110114990A1 (en) * | 2009-11-16 | 2011-05-19 | Seoul Opto Device Co., Ltd. | Light emitting diode having electrode extensions for current spreading |
| US20110193799A1 (en) * | 2010-02-11 | 2011-08-11 | Samsung Mobile Display Co., Ltd. | Organic Light Emitting Diode Display and Manufacturing Method Thereof |
| CN108288661A (en) * | 2017-01-10 | 2018-07-17 | 英属开曼群岛商錼创科技股份有限公司 | Micro-led chip and display panel |
| US20190123243A1 (en) * | 2017-10-24 | 2019-04-25 | Xiamen Sanan Optoelectronics Technology Co., Ltd. | Light-Emitting Diode |
| US20200028028A1 (en) * | 2018-07-20 | 2020-01-23 | Pixeled Display Co., Ltd. | Micro light emitting device and display apparatus |
| WO2021115470A1 (en) * | 2019-12-13 | 2021-06-17 | 深圳第三代半导体研究院 | Light-emitting diode |
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Application publication date: 20220201 |