CN113998666A - High-sensitivity full-graphene artificial electronic skin capable of resisting ultra-large strain - Google Patents
High-sensitivity full-graphene artificial electronic skin capable of resisting ultra-large strain Download PDFInfo
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- CN113998666A CN113998666A CN202111226499.4A CN202111226499A CN113998666A CN 113998666 A CN113998666 A CN 113998666A CN 202111226499 A CN202111226499 A CN 202111226499A CN 113998666 A CN113998666 A CN 113998666A
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Abstract
The invention discloses a high-sensitivity full-graphene artificial electronic skin capable of resisting ultra-large strain, which comprises a flexible substrate, an electrode pattern array made of low-density nucleation graphene, and a channel made of high-density nucleation graphene and having sensitive mechanical response; the electrode pattern array and the channel are both arranged on the surface of the flexible substrate, and the two corresponding electrodes are communicated through the channel; the invention has the beneficial effects that: the artificial electronic skin can be prepared in a large area, so that the possibility of processing the artificial electronic skin is provided, a device array with stable mechanical performance can be produced in batches, the artificial electronic skin made of all graphene can not break under the condition of bearing ultra-large strain, and the sensitivity factor of the artificial electronic skin based on graphene to the external strain response is greatly improved; the preparation process is compatible with the existing semiconductor processing technology, namely the artificial electronic skin has good application potential and wide application value.
Description
Technical Field
The invention belongs to the technical field of nanotechnology, and particularly relates to a high-sensitivity full-graphene artificial electronic skin capable of resisting ultra-large strain, which can be used in the fields of artificial electronic skins, flexible touch screens, wearable health monitoring equipment and the like.
Background
Artificial electronic skin, also known as skin-like electronics, is an electronic system consisting of a series of highly sensitive electronic components that can simulate the function of human skin. The skin-friendly elastic sensing fabric not only has good flexibility and elasticity like skin, but also has the capability of sensing the change of external environment (temperature, humidity, stress and the like), and can be widely applied to the fields of robots, monitoring technologies and the like. For artificial electronic skin, the most central part is the sensor part, and different types of sensors can sense the change of conditions such as stress, temperature, humidity and the like in the external environment in real time and convert the change into corresponding electric signals. In recent years, in view of new requirements for miniaturization and structural flexibility of devices, two-dimensional materials have rapidly developed in research on artificial electronic skins due to their excellent electrical and mechanical properties, and among them, the monoatomic layer structure of graphene better meets the requirement for lightness and thinness of artificial electronic skins.
Graphene is the lightest material so far and has excellent mechanical strength which is 100 times that of steel materials, the tensile strength and the elastic modulus are respectively 125GPa and 1.1TPa, the material with the largest mechanical strength is the material known at present, and the stretchability also shows great potential in flexible electronics application. In addition, the good transparent conductivity (the mobility exceeds 20,000cm2/Vs), the random bending along the substrate and other characteristics of the graphene can provide possibility for wide application in artificial skin.
Although various excellent properties of graphene make the application of the graphene in artificial electronic skins possible, the zero-band-gap energy band structure of the graphene determines that the graphene is more similar to a semi-metal material, and the resistivity change of the graphene is satisfied when stress is applied, wherein the Poisson ratio represents the ratio of the cross-sectional area decreasing with the increase of the length. Since the value change is small, the resistance change caused purely by the geometric deformation is small. Whereas to open the band of exfoliated perfect graphene requires the application of a uniaxial strain of more than 23%. Previous research has therefore developed a stress sensor that changes the resistance change by changing the contact area between graphene sheets. In this model, the graphene sheets are not connected seamlessly in-plane, but rather are overlapped with each other to some extent, and the overlapping graphene portions have a reduced electrical resistance relative to a single layer. Therefore, when tensile stress and compressive stress are applied, the contact area of the graphene at the overlapped part is correspondingly reduced and increased, thereby causing a change in resistance. Compared with a graphene stress sensor utilizing deformation, the stress sensor obtained by the method for changing the size of the contact area when stress is applied can improve the sensitivity factor to about 10-100, but has a great difference from the sensitivity required in application, and the sensitivity of the graphene stress sensor based on the principle depends on the superposition degree between graphene sheets to a great extent, so that the repeatability among different samples is poor. In addition, due to the limitation that metal electrodes are prone to fracture under large strains, graphene artificial electronic skins using metal as electrodes suffer from limited strains (< 5%).
Disclosure of Invention
The method mainly aims to obtain graphene films with different nucleation densities by controlling different growth conditions on the basis of nano graphene obtained by a plasma enhanced chemical vapor deposition method, and the graphene films are respectively used as a sensing channel and an electrode part on the basis of different tunneling effects of the films, so that the full-graphene artificial electronic skin with high transparency and high sensitivity (sensitivity factor >500) and capable of resisting large strain (> 100%) is realized. In addition, through regulating and controlling different conditions of the growing graphene, the flexible full-graphene device array with adjustable sensitivity and adaptation to different strain environments can be obtained, so that the novel artificial electronic skin with the function exceeding the skin touch function of a human body is realized, and the novel artificial electronic skin can be used in the fields of future wearable equipment, touch screens and the like.
In order to achieve the above purpose, the invention provides the following technical scheme:
a high-sensitivity full-graphene artificial electronic skin capable of resisting ultra-large strain comprises a flexible substrate, an electrode pattern array made of low-density nucleation graphene, and a channel made of high-density nucleation graphene and having sensitive mechanical response; the electrode pattern array and the channel are both arranged on the surface of the flexible substrate, and the two corresponding electrodes are communicated through the channel.
The graphene films with different nucleation densities are obtained by regulating and controlling the growth temperature of the plasma enhanced chemical vapor deposition system. The graphene with high nucleation density has obvious tunneling effect, so that the current can be obviously changed along with strain under the action of stress, thereby realizing the function of mechanical sensing; the graphene obtained by low-density nucleation has small resistance and is not obviously influenced by a tunneling effect, so that the function of the electrode can be realized. When a large tensile stress is applied, the conditions of electrode fracture and the like are effectively avoided, and the functional stability of the device is ensured.
As a preferred embodiment, the flexible substrate is: a PET flexible substrate, a PI flexible substrate and a PDMS flexible substrate.
The PET flexible substrate is a polyethylene terephthalate flexible substrate. The high-temperature-resistant and high-frequency-resistant composite material has excellent physical and mechanical properties in a wide temperature range, the long-term use temperature can reach 120 ℃, the electrical insulation property is excellent, even under high temperature and high frequency, the electrical property is still good, but the corona resistance is poor, and the creep resistance, the fatigue resistance, the friction resistance and the dimensional stability are good.
The PI flexible substrate is a polyimide flexible substrate, is a material with the best temperature resistance in the existing polymer materials, has excellent chemical stability and mechanical properties, and is considered to be a flexible substrate material with great potential.
The PDMS flexible substrate is an organic silicon polydimethylsiloxane flexible substrate, and has the advantages of convenience, easiness in obtaining, stable chemical properties, good transparency and thermal stability, low Young modulus, skin-friendly property, good electronic material cohesiveness and the like.
As a preferred embodiment, the size of the graphene island obtained by low-density nucleation finger deposition is 15nm-30nm, and the size of the graphene island obtained by high-density nucleation finger deposition is 5nm-10 nm.
The graphene films with different nucleation densities are obtained by regulating and controlling the growth temperature of the plasma enhanced chemical vapor deposition system. The graphene with high nucleation density has obvious tunneling effect, so that the current can be obviously changed along with strain under the action of stress, thereby realizing the function of mechanical sensing; the graphene obtained by low-density nucleation has small resistance and is not obviously influenced by a tunneling effect, so that the function of the electrode can be realized. When a large tensile stress is applied, the conditions of electrode fracture and the like are effectively avoided, and the functional stability of the device is ensured.
In a second aspect of the application, a preparation method of a high-sensitivity full-graphene artificial electronic skin resistant to ultra-large strain is provided, which comprises the following steps:
(1) depositing graphene films with different nucleation densities on a silicon wafer substrate by using a plasma chemical vapor deposition method to prepare a low-density nucleation graphene film and a high-density nucleation graphene film; methane is used as a precursor, a plasma chemical vapor deposition system is used for directly depositing on a silicon oxide substrate at the temperature of 500-600 ℃ to obtain the graphene film with the thickness of 2nm, the temperatures in the deposition process are different, the formed nucleation densities are different, and the nucleation density is higher when the temperature is higher.
(2) Spin-coating PMMA on the low-density nucleation graphene film obtained in the step (1), transferring the low-density nucleation graphene film to a flexible substrate through wet etching, and then removing the PMMA layer; processing the low-density nucleation graphene film by utilizing ultraviolet optical exposure and reactive ion etching technology to obtain a graphene electrode pattern array;
(3) spin-coating PMMA on the high-density nucleation graphene film obtained in the step (1), transferring the high-density nucleation graphene film onto a flexible substrate through wet etching, and then removing the PMMA layer; and processing the high-density nucleation graphene film by utilizing ultraviolet optical exposure and reactive ion etching technologies to obtain the graphene channel.
As a preferred embodiment, in the step (1), the silicon wafer substrate layer is a silicon wafer substrate layer with a 300nm oxide layer covering the surface.
As a preferred embodiment, in the step (1), the temperature of vapor deposition corresponding to low-density nucleation is 510-540 ℃; the temperature of vapor deposition corresponding to high-density nucleation is 580-600 ℃.
As a preferred embodiment, in the step (2) and the step (3), the concentration of the spin-coated PMMA is 5%; the wet etching comprises the following steps: soaking in 10% hydrofluoric acid for 10 min.
The invention has the beneficial effects that: according to the ultra-large strain resistant high-sensitivity full-graphene artificial electronic skin, graphene films with different nucleation densities are obtained by controlling different growth conditions, and the graphene films are respectively used as a sensing channel and an electrode part based on different tunneling effects of the films, so that the full-graphene artificial electronic skin with high transparency and high sensitivity (sensitivity factor >500) and capable of resisting large strain (> 100%) is realized. In addition, through regulating and controlling different conditions of the growing graphene, the flexible full-graphene device array with adjustable sensitivity and adaptation to different strain environments can be obtained, so that the novel artificial electronic skin with the function exceeding the skin touch function of a human body is realized, and the novel artificial electronic skin can be used in the fields of future wearable equipment, touch screens and the like.
The high-sensitivity full-graphene artificial electronic skin capable of resisting the ultra-large strain can be prepared in a large area, so that the possibility of processing the artificial electronic skin is provided, a device array with stable mechanical performance can be produced in batches, the full-graphene artificial electronic skin is guaranteed not to break under the condition of bearing the ultra-large strain, and the sensitivity factor of the artificial electronic skin based on the graphene to the external strain response is greatly improved.
The preparation process of the high-sensitivity full-graphene artificial electronic skin capable of resisting the ultra-large strain is compatible with the existing semiconductor processing technology, namely the full-graphene artificial electronic skin has good application potential and wide application value.
Drawings
FIG. 1 is a structural diagram of the high-sensitivity full-graphene artificial electronic skin capable of resisting ultra-large strain according to the invention;
in the figure: 1. an electrode; 2. a channel; 3. a flexible substrate.
Detailed Description
In order to make the technical solutions in the embodiments of the present application better understood, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to examples, and it is obvious that the described embodiments are only some embodiments of the present application, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
Example 1
A high-sensitivity full-graphene artificial electronic skin capable of resisting ultra-large strain comprises a PET flexible substrate, an electrode pattern array made of low-density nucleation graphene, and a channel made of high-density nucleation graphene and having sensitive mechanical response; the electrode pattern array and the channel are both arranged on the surface of the flexible substrate, and the two corresponding electrodes are communicated through the channel;
the size of the graphene island obtained by low-density nucleation refers to 15nm-30nm, and the size of the graphene island obtained by high-density nucleation refers to 5nm-10 nm.
The structure diagram of the full-graphene artificial electronic skin in embodiment 1 of the present invention is shown in fig. 1.
The preparation method of the ultra-large strain resistant high-sensitivity full-graphene artificial electronic skin, disclosed by the embodiment 1, comprises the following steps:
(1) using methane as a precursor, and directly depositing on a silicon wafer substrate with a surface covered with 300nm silicon dioxide by using a plasma chemical vapor deposition system at 500-600 ℃ to obtain a graphene film with a thickness of 2nm, wherein the formed nucleation densities are different due to different temperatures in the deposition process, the nucleation density is higher when the temperature is higher, and the vapor deposition temperature corresponding to low-density nucleation in the embodiment is 520 ℃; the temperature of vapor deposition corresponding to high-density nucleation is 590 ℃;
(2) spin-coating 5% PMMA on the low-density nucleation graphene film obtained in the step (1), placing the substrate on which PMMA is spin-coated in 10% hydrofluoric acid solution, standing for 10 minutes, washing with deionized water for many times when the silicon dioxide layer is completely corroded and the PMMA film with graphene is suspended in the solution, taking out the PMMA in the solution by using a flexible substrate, and removing the PMMA layer by using acetone; processing the low-density nucleation graphene film by utilizing ultraviolet optical exposure and reactive ion etching technology to obtain a graphene electrode pattern array;
(3) spinning 5% PMMA on the high-density nucleated graphene film obtained in the step (1), placing the substrate spin-coated with PMMA in 10% hydrofluoric acid solution, standing for 10 minutes, washing with deionized water for many times when the silicon dioxide layer is completely corroded and the PMMA film with the graphene is suspended in the solution, taking out the PMMA in the solution by using a flexible substrate, and removing the PMMA layer by using acetone; and processing the high-density nucleation graphene film by utilizing ultraviolet optical exposure and reactive ion etching technologies to obtain the graphene channel.
The transparency of the full-graphene artificial electronic skin obtained in the embodiment 1 is more than 90%, the sensitivity factor can reach more than 500, and the degree of resisting large strain is more than 100%.
Example 2
A high-sensitivity full-graphene artificial electronic skin capable of resisting ultra-large strain comprises a PI flexible substrate, an electrode pattern array made of low-density nucleation graphene, and a channel made of high-density nucleation graphene and having sensitive mechanical response; the electrode pattern array and the channel are both arranged on the surface of the flexible substrate, and the two corresponding electrodes are communicated through the channel;
the size of the graphene island obtained by low-density nucleation refers to 15nm-30nm, and the size of the graphene island obtained by high-density nucleation refers to 5nm-10 nm.
The preparation method of the ultra-large strain resistant high-sensitivity full-graphene artificial electronic skin, disclosed by embodiment 2, comprises the following steps:
(1) using methane as a precursor, and directly depositing on a silicon wafer substrate with a surface covered with 300nm silicon dioxide by using a plasma chemical vapor deposition system at 500-600 ℃ to obtain a graphene film with a thickness of 2nm, wherein the formed nucleation densities are different due to different temperatures in the deposition process, the nucleation density is higher when the temperature is higher, and the vapor deposition temperature corresponding to low-density nucleation in the embodiment is 510 ℃; the temperature of vapor deposition corresponding to high-density nucleation is 600 ℃;
(2) spin-coating 5% PMMA on the low-density nucleation graphene film obtained in the step (1), placing the substrate on which PMMA is spin-coated in 10% hydrofluoric acid solution, standing for 10 minutes, washing with deionized water for many times when the silicon dioxide layer is completely corroded and the PMMA film with graphene is suspended in the solution, then fishing out the PMMA in the solution by using a flexible substrate, and removing the PMMA layer by using acetone; processing the low-density nucleation graphene film by utilizing ultraviolet optical exposure and reactive ion etching technology to obtain a graphene electrode pattern array;
(3) spinning 5% PMMA on the high-density nucleated graphene film obtained in the step (1), placing the substrate spin-coated with PMMA in 10% hydrofluoric acid solution, standing for 10 minutes, washing with deionized water for many times when the silicon dioxide layer is completely corroded and the PMMA film with the graphene is suspended in the solution, taking out the PMMA in the solution by using a flexible substrate, and removing the PMMA layer by using acetone; and processing the high-density nucleation graphene film by utilizing ultraviolet optical exposure and reactive ion etching technologies to obtain the graphene channel.
Example 3
A high-sensitivity full-graphene artificial electronic skin capable of resisting ultra-large strain comprises a PDMS flexible substrate, an electrode pattern array made of low-density nucleation graphene, and a channel made of high-density nucleation graphene and having sensitive mechanical response; the electrode pattern array and the channel are both arranged on the surface of the flexible substrate, and the two corresponding electrodes are communicated through the channel;
the low-density nucleation means that the size of the graphene island is 15nm-30nm, and the high-density nucleation means that the size of the graphene island is 5nm-10 nm.
The preparation method of the ultra-large strain resistant high-sensitivity full-graphene artificial electronic skin, disclosed by embodiment 3, comprises the following steps:
(1) using methane as a precursor, and directly depositing the methane as the precursor on a silicon wafer substrate with the surface covered with 300nm silicon oxide by using a plasma chemical vapor deposition system at 500-600 ℃ to obtain a graphene film with the thickness of 2nm, wherein the formed nucleation densities are different due to different temperatures in the deposition process, the nucleation density is higher when the temperature is higher, and the vapor deposition temperature corresponding to low-density nucleation in the embodiment is 530 ℃; the temperature of vapor deposition corresponding to high-density nucleation is 580 ℃;
(2) spin-coating 5% PMMA on the low-density nucleation graphene film obtained in the step (1), placing the substrate on which PMMA is spin-coated in 10% hydrofluoric acid solution, standing for 10 minutes, washing with deionized water for many times when the silicon dioxide layer is completely corroded and the PMMA film with graphene is suspended in the solution, taking out the PMMA in the solution by using a flexible substrate, and removing the PMMA layer by using acetone; processing the low-density nucleation graphene film by utilizing ultraviolet optical exposure and reactive ion etching technology to obtain a graphene electrode pattern array;
(3) spinning 5% PMMA on the high-density nucleated graphene film obtained in the step (1), placing the substrate spin-coated with PMMA in 10% hydrofluoric acid solution, standing for 10 minutes, washing with deionized water for many times when the silicon dioxide layer is completely corroded and the PMMA film with the graphene is suspended in the solution, taking out the PMMA in the solution by using a flexible substrate, and removing the PMMA layer by using acetone; and processing the high-density nucleation graphene film by utilizing ultraviolet optical exposure and reactive ion etching technologies to obtain the graphene channel.
The above description is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, several modifications and additions can be made without departing from the method of the present invention, and these modifications and additions should also be regarded as the protection scope of the present invention.
Claims (7)
1. A high-sensitivity full-graphene artificial electronic skin capable of resisting ultra-large strain is characterized by comprising a flexible substrate, an electrode pattern array made of low-density nucleation graphene, and a channel made of high-density nucleation graphene and having sensitive mechanical response;
the electrode pattern array and the channel are both arranged on the surface of the flexible substrate, and the two corresponding electrodes are communicated through the channel.
2. The ultra-large strain resistant highly sensitive all-graphene artificial electronic skin according to claim 1, wherein the flexible substrate is: a PET flexible substrate, a PI flexible substrate and a PDMS flexible substrate.
3. The ultra-large strain resistant high-sensitivity full-graphene artificial electronic skin according to claim 2, wherein the size of the graphene island obtained by low-density nucleation finger deposition is 15nm-30nm, and the size of the graphene island obtained by high-density nucleation finger deposition is 5nm-10 nm.
4. The method for preparing the ultra-large strain resistant high-sensitivity full-graphene artificial electronic skin as claimed in any one of claims 1 to 3, is characterized by comprising the following steps:
(1) depositing graphene films with different nucleation densities on a silicon wafer substrate by using a plasma chemical vapor deposition method to prepare a low-density nucleation graphene film and a high-density nucleation graphene film;
(2) spin-coating PMMA on the low-density nucleation graphene film obtained in the step (1), transferring the low-density nucleation graphene film to a flexible substrate through wet etching, and then removing the PMMA layer; processing the low-density nucleation graphene film by utilizing ultraviolet optical exposure and reactive ion etching technology to obtain a graphene electrode pattern array;
(3) spin-coating PMMA on the high-density nucleation graphene film obtained in the step (1), transferring the high-density nucleation graphene film onto a flexible substrate through wet etching, and then removing the PMMA layer; and processing the high-density nucleation graphene film by utilizing ultraviolet optical exposure and reactive ion etching technologies to obtain the graphene channel.
5. The method for preparing the ultra-large strain resistant high-sensitivity full-graphene artificial electronic skin according to claim 4, wherein in the step (1), the silicon wafer substrate layer is a silicon wafer substrate layer with a 300nm oxide layer covered on the surface.
6. The method for preparing the ultra-large strain resistant highly sensitive all-graphene artificial electronic skin as claimed in claim 4, wherein in the step (1), the temperature of vapor deposition corresponding to low-density nucleation is 510-540 ℃; the temperature of vapor deposition corresponding to high-density nucleation is 580-600 ℃.
7. The method for preparing the ultra-large strain resistant high-sensitivity full-graphene artificial electronic skin according to claim 4, wherein in the step (2) and the step (3), the concentration of the spin-coated PMMA is 5%; the wet etching comprises the following steps: soaking in 10% hydrofluoric acid for 10 min.
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012247189A (en) * | 2011-05-25 | 2012-12-13 | Hitachi Ltd | Graphene sensor, substance species analyzer using sensor, and method for detecting substance species using sensor |
| US20130214252A1 (en) * | 2010-09-08 | 2013-08-22 | President And Fellows Of Harvard College | Controlled synthesis of monolithically-integrated graphene structure |
| CN104949609A (en) * | 2015-05-20 | 2015-09-30 | 清华大学 | Flexible graphene sensor and manufacture method thereof |
| US20150292112A1 (en) * | 2014-04-15 | 2015-10-15 | Board Of Regents, The University Of Texas System | Methods of forming graphene single crystal domains |
| EP3312137A1 (en) * | 2015-06-18 | 2018-04-25 | Consejo Superior De Investigaciones Científicas | Deposition of graphene layers by means of plasma-enhanced chemical vapour deposition |
| CN109341902A (en) * | 2018-11-26 | 2019-02-15 | 国宏中晶集团有限公司 | It is a kind of using graphene as pliable pressure sensor of electrode material and preparation method thereof |
| CN109390403A (en) * | 2017-08-10 | 2019-02-26 | 北京纳米能源与***研究所 | Grapheme transistor and preparation method thereof, application method and from driving electronic skin |
| AU2020103599A4 (en) * | 2020-11-23 | 2021-02-04 | Xidian University | Preparation Method of CVD Graphene Planar Micro Super Capacitor |
| CN112701173A (en) * | 2020-12-24 | 2021-04-23 | 上海交通大学 | Graphene high-sensitivity photoelectric detector and preparation method thereof |
-
2021
- 2021-10-21 CN CN202111226499.4A patent/CN113998666B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130214252A1 (en) * | 2010-09-08 | 2013-08-22 | President And Fellows Of Harvard College | Controlled synthesis of monolithically-integrated graphene structure |
| JP2012247189A (en) * | 2011-05-25 | 2012-12-13 | Hitachi Ltd | Graphene sensor, substance species analyzer using sensor, and method for detecting substance species using sensor |
| US20150292112A1 (en) * | 2014-04-15 | 2015-10-15 | Board Of Regents, The University Of Texas System | Methods of forming graphene single crystal domains |
| CN104949609A (en) * | 2015-05-20 | 2015-09-30 | 清华大学 | Flexible graphene sensor and manufacture method thereof |
| EP3312137A1 (en) * | 2015-06-18 | 2018-04-25 | Consejo Superior De Investigaciones Científicas | Deposition of graphene layers by means of plasma-enhanced chemical vapour deposition |
| CN109390403A (en) * | 2017-08-10 | 2019-02-26 | 北京纳米能源与***研究所 | Grapheme transistor and preparation method thereof, application method and from driving electronic skin |
| CN109341902A (en) * | 2018-11-26 | 2019-02-15 | 国宏中晶集团有限公司 | It is a kind of using graphene as pliable pressure sensor of electrode material and preparation method thereof |
| AU2020103599A4 (en) * | 2020-11-23 | 2021-02-04 | Xidian University | Preparation Method of CVD Graphene Planar Micro Super Capacitor |
| CN112701173A (en) * | 2020-12-24 | 2021-04-23 | 上海交通大学 | Graphene high-sensitivity photoelectric detector and preparation method thereof |
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