CN1139971C - 具有多层布线的半导体器件的制造方法 - Google Patents
具有多层布线的半导体器件的制造方法 Download PDFInfo
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- CN1139971C CN1139971C CNB981026613A CN98102661A CN1139971C CN 1139971 C CN1139971 C CN 1139971C CN B981026613 A CNB981026613 A CN B981026613A CN 98102661 A CN98102661 A CN 98102661A CN 1139971 C CN1139971 C CN 1139971C
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- film
- silicon oxide
- semiconductor device
- multilayer wiring
- oxide film
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 57
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- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
- H01L21/76811—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving multiple stacked pre-patterned masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
- H01L21/76813—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving a partial via etch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
- H01L21/3121—Layers comprising organo-silicon compounds
- H01L21/3122—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds
- H01L21/3124—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds layers comprising hydrogen silsesquioxane
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims (12)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP172056/97 | 1997-06-27 | ||
JP17205697A JP3390329B2 (ja) | 1997-06-27 | 1997-06-27 | 半導体装置およびその製造方法 |
JP172056/1997 | 1997-06-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1204142A CN1204142A (zh) | 1999-01-06 |
CN1139971C true CN1139971C (zh) | 2004-02-25 |
Family
ID=15934725
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB981026613A Expired - Fee Related CN1139971C (zh) | 1997-06-27 | 1998-06-26 | 具有多层布线的半导体器件的制造方法 |
Country Status (6)
Country | Link |
---|---|
US (2) | US6140225A (zh) |
JP (1) | JP3390329B2 (zh) |
KR (1) | KR100321571B1 (zh) |
CN (1) | CN1139971C (zh) |
GB (1) | GB2326765B (zh) |
TW (1) | TW405163B (zh) |
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TW506105B (en) * | 2001-10-26 | 2002-10-11 | Nanya Technology Corp | Method for forming interconnect |
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JP2007005840A (ja) * | 2006-10-16 | 2007-01-11 | Renesas Technology Corp | 半導体集積回路装置の製造方法 |
JP5096860B2 (ja) * | 2007-10-04 | 2012-12-12 | パナソニック株式会社 | パターン形成方法 |
JP4745370B2 (ja) * | 2008-06-11 | 2011-08-10 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
CN102222640B (zh) * | 2010-04-16 | 2013-08-14 | 中芯国际集成电路制造(上海)有限公司 | 通孔形成方法 |
JP4819188B2 (ja) * | 2011-02-02 | 2011-11-24 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
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JP5857690B2 (ja) * | 2011-12-02 | 2016-02-10 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
JP5942867B2 (ja) * | 2013-01-22 | 2016-06-29 | 富士通株式会社 | 半導体装置の製造方法 |
CN104078362A (zh) * | 2013-03-29 | 2014-10-01 | 中国科学院微电子研究所 | 半导体器件制造方法 |
JP6197381B2 (ja) * | 2013-06-05 | 2017-09-20 | 富士通セミコンダクター株式会社 | 半導体装置とその製造方法 |
US20150206794A1 (en) * | 2014-01-17 | 2015-07-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for Removing Micro Scratches In Chemical Mechanical Polishing Processes |
JP2018049976A (ja) | 2016-09-23 | 2018-03-29 | 東芝メモリ株式会社 | 半導体装置の製造方法 |
WO2022016502A1 (en) * | 2020-07-24 | 2022-01-27 | Yangtze Memory Technologies Co., Ltd. | Method of preparing and analyzing thin films |
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-
1997
- 1997-06-27 JP JP17205697A patent/JP3390329B2/ja not_active Expired - Fee Related
-
1998
- 1998-06-25 GB GB9813799A patent/GB2326765B/en not_active Expired - Fee Related
- 1998-06-25 US US09/104,714 patent/US6140225A/en not_active Expired - Lifetime
- 1998-06-26 TW TW087110360A patent/TW405163B/zh not_active IP Right Cessation
- 1998-06-26 CN CNB981026613A patent/CN1139971C/zh not_active Expired - Fee Related
- 1998-06-27 KR KR1019980024553A patent/KR100321571B1/ko not_active IP Right Cessation
-
1999
- 1999-11-12 US US09/439,809 patent/US6225217B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
GB2326765A (en) | 1998-12-30 |
US6225217B1 (en) | 2001-05-01 |
KR100321571B1 (ko) | 2002-03-08 |
TW405163B (en) | 2000-09-11 |
US6140225A (en) | 2000-10-31 |
KR19990007413A (ko) | 1999-01-25 |
JP3390329B2 (ja) | 2003-03-24 |
CN1204142A (zh) | 1999-01-06 |
JPH1117008A (ja) | 1999-01-22 |
GB2326765B (en) | 2000-11-15 |
GB9813799D0 (en) | 1998-08-26 |
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