CN113990989B - Ultraviolet light-emitting diode epitaxial wafer and manufacturing method thereof - Google Patents
Ultraviolet light-emitting diode epitaxial wafer and manufacturing method thereof Download PDFInfo
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Abstract
The invention discloses an ultraviolet light-emitting diode epitaxial wafer and a manufacturing method thereof. The epitaxial wafer comprises an n-type layer, a quantum well light-emitting layer and a p-type layer which are sequentially arranged along a specified direction, wherein the p-type layer comprises a p-type electron blocking layer, a tunneling layer and a p-type contact layer which are sequentially arranged along the specified direction, and the tunneling layer comprises a p-type Al layer which is sequentially arranged along the specified direction1‑xInxN layer, InN layer and N-type Al1‑yInyAnd x is more than 0 and less than or equal to 0.6, and y is more than 0 and less than or equal to 0.6. The ultraviolet light-emitting diode epitaxial wafer provided by the invention has strong hole injection capability and high light-emitting efficiency.
Description
Technical Field
The invention belongs to the technical field of photoelectron manufacturing, and particularly relates to an ultraviolet light emitting diode epitaxial wafer and a manufacturing method thereof.
Background
The AlN-based ultraviolet LED light source has the advantages of high efficiency, energy conservation, small volume, safety, durability, no mercury, environmental protection, low working voltage, low power consumption and the like, and is widely applied to the fields of fluorescence excitation, water purification, light treatment, plant growth illumination, ultraviolet curing and the like.
Currently, an AlN-based LED epitaxial wafer generally includes a substrate, and an AlN buffer layer, a three-dimensional island-shaped AlN growth layer, a two-dimensional recovery AlN growth layer, an n-type AlGaN layer, an MQW light-emitting layer, and a p-type layer formed on the substrate, and when the LED is powered on, carriers (including electrons of the n-type AlGaN layer and holes of the p-type layer) will migrate to the MQW light-emitting layer and recombine to emit light in the light-emitting layer.
However, the existing AlN-based LED epitaxial wafer has at least the following problems: 1) due to the fact that high acceptor activation energy exists in a p-type layer in the AlN-based ultraviolet LED epitaxial wafer, the p-type layer is low in conductivity and high in contact resistance, and therefore hole injection efficiency is low; 2) the existing p-type layer generally adopts GaN material, the energy band width of the GaN material is lower than that of AlGaN, and the GaN material has stronger light absorption effect, so that the light extraction efficiency is lower.
Disclosure of Invention
The invention mainly aims to provide an ultraviolet light emitting diode epitaxial wafer and a manufacturing method thereof, so as to overcome the defects of the prior art.
In order to achieve the purpose, the technical scheme adopted by the invention comprises the following steps:
the embodiment of the invention provides an ultraviolet light-emitting diode epitaxial wafer which comprises an n-type layer, a quantum well light-emitting layer and a p-type layer which are sequentially arranged along a specified direction, wherein the p-type layer comprises a p-type electron blocking layer, a tunneling layer and a p-type contact layer which are sequentially arranged along the specified direction, and the tunneling layer comprises p-type Al layers which are sequentially arranged along the specified direction1-xInxN layer, InN layer and N-type Al1-yInyAnd the x is more than 0 and less than or equal to 0.6, and the y is more than 0 and less than or equal to 0.6.
Further, the p-type Al1-xInxThe In component content In the N layer gradually increases In a prescribed direction.
Further, the n-type Al1-yInyThe In component content In the N layer gradually decreases In a prescribed direction.
Further, the p-type Al1-xInxThe thickness of the N layer is 5-10 nm.
Furthermore, the thickness of the InN layer is 1-3 nm.
Further, the n-type Al1-yInyThe thickness of the N layer is 5-10 nm.
Further, the n-type layer includes an n-type AlGaN layer.
Further, the p-type Al1-xInxThe doping concentration of the N layer is 1019~1020cm-3。
Further, the n-type Al1-yInyThe doping concentration of the N layer is 1018~1019cm-3。
In some specific embodiments, the epitaxial wafer comprises a substrate, a buffer layer, a three-dimensional island-shaped AlN growth layer, a two-dimensional recovery AlN growth layer, an n-type AlGaN layer, a quantum well light-emitting layer, a p-type electron blocking layer, and p-type Al, which are sequentially arranged along a specified direction1-xInxN layer, InN layer, N-type Al1-yInyN-and p-type contact layers.
The embodiment of the invention also provides a manufacturing method of the ultraviolet light-emitting diode epitaxial wafer, which comprises the step of respectively growing an n-type layer, a quantum well light-emitting layer and a p-type layer, wherein the step of growing the p-type layer comprises the following steps:
growing a p-type electron blocking layer,
sequentially growing p-type Al on the p-type electron blocking layer1-xInxN layer, InN layer and N-type Al1-yInyAn N layer, thereby forming a tunneling layer; and
and growing a p-type contact layer on the tunneling layer.
Further, the manufacturing method specifically comprises the following steps: growing the p-type Al by adopting a molecular beam epitaxy mode1- xInxN layer, InN layer and N-type Al1-yInyN layer, thereby forming a tunneling layer.
Further, the p-type Al is grown in a molecular beam epitaxy device1-xInxN layer and N-type Al1-yInyWhen N layer is formed, the temperature in the growth chamber is 900-1000 ℃, and the pressure is 10-10~10-11torr。
Further, when the InN layer is grown by molecular beam epitaxy equipment, the temperature in a growth cavity is 700-800 ℃, and the pressure is 10-10~10-11torr。
Further, growing the p-type Al1-xInxIn the process of the N layer, an In source is introduced In a gradually increasing mode.
Further, the n-type Al is grown1-yInyIn the process of N layer, In source is introduced In a gradually decreasing mode.
Further, the manufacturing method further comprises: firstly, a buffer layer, a three-dimensional island-shaped AlN growth layer and a two-dimensional recovery AlN growth layer are sequentially grown on a substrate, and then an n-type layer, a quantum well light-emitting layer and a p-type layer are sequentially grown on the two-dimensional recovery AlN growth layer.
Compared with the prior art, the ultraviolet light-emitting diode epitaxial wafer provided by the embodiment of the invention has the advantages that the tunneling layer is arranged in the P-type layer, the structure of the tunneling layer is optimized, the impedance and the working voltage of the P-type layer of the epitaxial wafer are reduced, the limitation of deep acceptor thermal ionization is overcome, the hole injection of the P-type layer is enhanced, the light absorption of the P-type layer is reduced, and the radiation recombination of holes and electrons in the quantum well light-emitting layer is further enhanced.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments described in the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of an ultraviolet light emitting diode epitaxial wafer according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a quantum well light-emitting layer of an ultraviolet light-emitting diode epitaxial wafer according to an embodiment of the present invention;
fig. 3 is a flowchart of a method for manufacturing an ultraviolet light emitting diode epitaxial wafer according to an embodiment of the present invention.
Detailed Description
In view of the defects of the prior art, the inventor of the present invention has made extensive research and practice to provide a technical scheme of the present invention, which can reduce the impedance and the operating voltage of a p-type layer of an epitaxial wafer, enhance the hole injection of the p-type layer, further enhance the radiative recombination of holes and electrons in a quantum well light-emitting layer, and improve the light-emitting efficiency of an ultraviolet light-emitting diode.
The technical solution, its implementation and principles will be further explained with reference to the drawings.
Referring to fig. 1, an AlN-based ultraviolet light emitting diode epitaxial wafer includes an AlN buffer layer 20, a three-dimensional island-shaped AlN growth layer 30, a two-dimensional recovered AlN growth layer 40, an n-type AlGaN layer 50, a quantum well light emitting layer 60, a p-type electron blocking layer 70, a tunneling layer 80, and a p-type contact layer 90, which are sequentially disposed from bottom to top on a sapphire substrate 10, wherein the p-type electron blocking layer 70, the tunneling layer 80, and the p-type contact layer 90 together constitute a p-type layer of the epitaxial wafer.
Wherein the tunneling layer 80 comprises p-type Al arranged from bottom to top in sequence1-xInx N layer 81, InN layer 82 and N-type Al1-yIny N layer 83, x is more than 0 and less than or equal to 0.6, y is more than 0 and less than or equal to 0.6, and the p-type Al1-xInxThe N layer 81 and the InN layer 82 form a first heterojunction, the N-type Al1-yIny N layer 83 and InN layer 82 form a second heterojunction.
By introducing the tunneling layer 80 in the p-type layer, a very high polarization charge density is created at the interface of the first and second heterojunction formed thereby, causing a higher polarization electric field, which in turn causes the band to bend and pass through the thinner InN layer 82 causing p-type Al1-xInxValence band edge of N layer 81 side and N-type Al1-yInyThe conduction band edge on the N layer 83 side is aligned. Due to P type Al1-xInxThere is a large amount of three-dimensionally polarized bound positive charge in the N layer 81, and N-type Al1-yInyThe N layer 83 has a large amount of three-dimensional polarization bound negative charges, when a forward bias is applied to the LED, a reverse bias is generated in the tunneling layer 80, and the positive and negative bound charges are diffused relatively to each other, so that P-type Al is formed1-xInx N layer 81 valence band leaves electrons in N-type Al1-yInyThe N layer 83 leaves holes in the conduction band, which results in a large number of electrons from the p-type Al1-xInxValence band tunneling of N layer 81 to N-type Al1-yInyA large amount of non-equilibrium holes are generated in the conduction band of the N layer 83 and injected into the p-type Al1-xInxIn the N layer 81, thereby effectively improving the hole injection efficiency of the p-type layer.
Further, the p-type Al1-xInxThe In component content In the N layer 81 gradually increases In a given direction.
Further, the n-type Al1-yInyThe In component content In the N layer 83 gradually decreases In a prescribed direction.
A polarization area with gradient change is generated by the AlInN layer with gradually changed In content, so that three-dimensional polarization charges are generated, and n-type Al1-yInyNegative three-dimensional polarization bound charges in the gradient polarization region of the N layer 83 will attract higher density of free holes, causing p-type Al1-xInxThe valence band of the gradient polarization region of the N layer 81 is closer to the Fermi level, thereby lowering the p-type Al1-xInxDepletion barrier of N layer 81 to reduce p-type Al1-xInxThe tunneling resistance of the N layer 81 enables the possibility of tunneling at a smaller reverse bias.
In some embodiments, the p-type Al1-xInxThe thickness of the N layer 81 can be 5-10 nm, the thickness of the InN layer 82 can be 1-3 nm, and the N-type Al1-yInyThe thickness of the N layer 83 may be 5 to 10 nm.
By adding p-type Al1-xInx N layer 81 and N-type Al1-yInyThe thickness of N layer 83 is set to be thicker, while the thickness of InN layer 82 is set to be thinner, which facilitates rapid tunneling of a large number of electrons.
Further, the p-type Al1-xInxThe doping concentration of the N layer 81 may be 1019~1020cm-3The dopant may use Mg.
Further, the n-type Al1-yInyThe doping concentration of the N layer 83 may be 1018~1019cm-3As the dopant, Si, Ge, or the like can be used.
In some embodiments, the AlN buffer layer 20 may have a thickness of 10 to 15nm, the three-dimensional island-shaped AlN growth layer 30 may have a thickness of 500 to 700nm, the two-dimensional recovery AlN growth layer 40 may have a thickness of 1.8 to 2.2 μm, the n-type AlGaN layer 50 may have a thickness of 1 to 2 μm, the p-type electron blocking layer 70 may have a thickness of 80 to 120nm, and the p-type contact layer 90 may have a thickness of 50to 100 nm.
Further, referring to fig. 2, the quantum well light emitting layer 60 includes a plurality of AlaGa1-aN-well layer 61 and AlbGa1-bAn N barrier layer 62 of AlaGa1-aN-well layer 61 and AlbGa1-bThe N barrier layers 62 are alternately stacked for 4-6 periods, but not limited thereto, wherein a is more than or equal to 0.3 and less than or equal to 0.5, and b is more than or equal to 0.5 and less than or equal to 0.8.
In some embodiments, the AlaGa1-aThe thickness of the N well layer 61 can be 2-4 nm, and the Al isbGa1-bThe thickness of the N barrier layer 62 may be 10-15 nm.
Further, a method for manufacturing the AlN-based ultraviolet light emitting diode epitaxial wafer may include: an AlN buffer layer 20, a three-dimensional island-shaped AlN growth layer 30, a two-dimensional recovery AlN growth layer 40, an n-type AlGaN layer 50, a quantum well light-emitting layer 60, a p-type electron blocking layer 70, a tunneling layer 80 and a p-type contact layer 90 are sequentially grown on a sapphire substrate 10, wherein the tunneling layer 80 comprises sequentially grown p-type Al1-xInx N layer 81, InN layer 82 and N-type Al1-yInyAnd an N layer 83.
In some embodiments, the substrate may be any one of a sapphire substrate, a silicon substrate, or a silicon carbide substrate, and is preferably a patterned sapphire substrate, but is not limited thereto.
The AlN buffer layer 20 needs to have a thickness adjusted according to actual conditions, and the quality of the finally formed epitaxy varies depending on the thickness. When the AlN buffer layer 20 is too thin, the surface thereof is relatively loose and rough, and a good template cannot be provided for the subsequent growth of the epitaxial structure; if the AlN buffer layer 20 is too thick, the surface thereof may be too dense, which is also disadvantageous for the growth of the subsequent epitaxial structure, and thus lattice defects in the epitaxial layer may not be reduced.
Further, the manufacturing method specifically comprises the following steps: the tunneling layer 80 is formed by molecular beam epitaxy.
Further, the manufacturing method specifically comprises the following steps: and growing the AlN buffer layer 20, the three-dimensional island-shaped AlN growth layer 30, the two-dimensional recovery AlN growth layer 40, the n-type AlGaN layer 50, the quantum well light-emitting layer 60, the p-type electron blocking layer 70 and the p-type contact layer 90 by adopting a metal organic vapor deposition mode.
Further, after the p-type electron barrier layer 70 is grown in the metal organic vapor deposition equipment, the epitaxial wafer sample is conveyed into the molecular beam epitaxy equipment through a high-temperature vacuum interconnection device and sequentially grown to form p-type Al1-xInx N layer 81, InN layer 82 and N-type Al1-yInyAnd the N layer 83 is formed, and then the epitaxial wafer sample is conveyed back to the metal organic vapor deposition equipment through the high-temperature vacuum interconnection device to continue growing the p-type contact layer 90.
Further, the manufacturing method specifically comprises the following steps: growing the p-type Al in a molecular beam epitaxy device1-xInx N layer 81 and N-type Al1-yInyWhen N layer is 83, the temperature in the growth chamber is 900-1000 ℃, and the pressure is 10-10~10-11torr。
Further, the manufacturing method specifically comprises the following steps: when the InN layer 82 is grown by molecular beam epitaxy equipment, the temperature in a growth cavity is 700-800 ℃, and the pressure is 10-10~10-11torr。
Further, the manufacturing method specifically comprises the following steps: in growing the p-type Al1-xInxIn the course of the N layer 81, the In source is introduced In a gradually increasing manner.
Further, the manufacturing method specifically comprises the following steps: in growing the n-type Al1-yInyIn the course of the N layer 83, the In source is introduced In a gradually decreasing manner.
Further, the manufacturing method specifically comprises the following steps: in growing the p-type Al1-xInx N layer 81, InN layer 82 and N-type Al1-yInyAnd when the N layer 83 is formed, a high-purity simple substance Al source, a high-purity simple substance In source and a radio frequency plasma N source are adopted.
Referring to fig. 3, in a more specific embodiment, a method for fabricating an AlN-based ultraviolet light emitting diode epitaxial wafer may include:
1) providing a sapphire substrate 10, transferring the sapphire substrate 10 into a reaction chamber of an MOCVD (Metal-organic Chemical Vapor Deposition) device, annealing for 5min in a hydrogen atmosphere at 1000 ℃ and 300torr to remove surface impurities, and then nitriding at 1100 ℃ for 10 min;
2) depositing an AlN buffer layer 20 with a thickness of 15nm on the sapphire substrate 10 pretreated in the step 1);
3) depositing a 600 nm-thick three-dimensional island-shaped AlN growth layer 30 on the AlN buffer layer 20, wherein the growth temperature of the three-dimensional island-shaped AlN growth layer 30 is 1130 ℃, the growth pressure is 100torr, and the growth time can be controlled within 20-40 min;
4) depositing a two-dimensional recovery AlN growth layer 40 with the thickness of 2 mu m on the three-dimensional island-shaped AlN growth layer 30, wherein the growth temperature of the two-dimensional recovery AlN growth layer 40 is 1350 ℃, the growth pressure is 100torr, and the growth time can be controlled within 60-120 min;
5) depositing an n-type AlGaN layer 50 with the thickness of 1.5 mu m on the two-dimensional recovered AlN growth layer 40, wherein the growth temperature of the n-type AlGaN layer 50 is 1200 ℃, the growth pressure is 100torr, and the doping concentration of Si is 1018~1019cm-3；
6) Al with a thickness of 3nm is alternately deposited on the n-type AlGaN layer 50aGa1-aN-well layer 61 and Al with thickness of 13nmbGa1- b N barrier layer 62, and repeating 5 cycles to form quantum well light-emitting layer 60, wherein AlaGa1-aThe growth temperature of the N well layer 61 was 1130 ℃ C, and AlbGa1-bThe growth temperature of the N barrier layer 62 is 1170 ℃, and AlaGa1-aN-well layer 61 and AlbGa1-bThe growth pressure of the N barrier layers 62 is 150 torr;
7) depositing a p-type electron blocking layer 70 with a thickness of 100nm on the quantum well light-emitting layer 60;
8) transferring the epitaxial wafer sample formed in the step 7) into a growth chamber of an MBE (Molecular-Beam-Epitaxy) device through a high-temperature vacuum interconnection device, and sequentially epitaxially growing the epitaxial wafer sample on the p-type electron blocking layer 70P-type Al with thickness of 8nm1-xInx N layer 81, InN layer 82 with thickness of 2nm and N-type Al with thickness of 8nm1-yInyAn N layer 83 to form a tunneling layer 80;
wherein p-type Al is grown1-xInx N layer 81, InN layer 82 and N-type Al1-yInyThe N layer 83 adopts high-purity simple substance Al source, high-purity simple substance In source and radio frequency plasma N source, and p-type Al1-xInxThe In component content In the N layer 81 is gradually increased (x is more than 0 and less than or equal to 0.6) along the direction close to the InN layer 82, and N-type Al1-yInyThe In component content of the N layer 83 gradually decreases (y is more than 0 and less than or equal to 0.6) along the direction far away from the InN layer 82, and p-type Al1-xInxThe N layer 81 is doped with a high-purity simple substance Mg source with a doping concentration of 1019~1020cm-3N type Al1-yInyThe N layer 83 is doped with a high-purity simple substance N source with the doping concentration of 1018~1019cm-3P-type Al1-xInxThe growth temperature of the N layer 81 was 950 ℃ and N-type Al1-yInyThe growth temperature of the N layer 83 is 950 ℃, and the growth temperature of the InN layer 82 is 750 ℃;
9) conveying the epitaxial wafer sample formed in the step 8) back to the growth chamber of the MOCVD equipment through a high-temperature vacuum interconnection device and placing the epitaxial wafer sample in the n-type Al1-yInyAnd depositing a p-type contact layer 90 with the thickness of 70nm on the N layer 83, and annealing for 20-30 min in a nitrogen atmosphere at the annealing temperature of 750-800 ℃, thereby completing the manufacture of the AlN-based ultraviolet light-emitting diode epitaxial wafer shown in the figure 1.
In this embodiment, the tunneling layer 80 is grown by Molecular Beam Epitaxy (MBE), and the MBE technology has at least the following advantages compared with other technologies such as MOCVD:
1) the growth cavity is in a high vacuum environment, the raw material adopts a high-purity simple substance source, so that the introduction of impurities such as C, H, O and the like can be effectively avoided, and the prepared single crystal material has extremely high purity;
2) in the MBE equipment, the baffle of the source furnace can be switched rapidly, the source beam can be controlled accurately, the growth mode of the crystal is further adjusted, the thickness, doping and components of the thin film layer can be controlled accurately, the growth temperature of the MBE is much lower than that of MOCVD and the like, the mutual diffusion of elements can be effectively reduced by low-temperature growth, and a heterostructure with a steep interface can be obtained in the tunneling layer 80 conveniently;
3) the MBE technology is based on the reaction kinetics of molecules on the growth surface, can perform crystal growth under the condition of non-thermal equilibrium, is an effective low-temperature epitaxy technology, and can grow non-miscible semiconductor materials which cannot be prepared by other epitaxy methods;
4) instruments such as a reflection type high energy electron diffraction (RHEED), an Auger Electron Spectroscopy (AES) or an optical reflection growth monitor are usually arranged in an MBE preparation system, in-situ detection and evaluation can be carried out on crystal growth, information such as material surface appearance and growth rate can be fed back in time, and accurate control of the growth process can be achieved.
In this embodiment, the MBE apparatus mainly includes a sample loading chamber, a transfer system chamber, a pre-processing chamber, a storage chamber, and an ultra-high vacuum growth chamber. Wherein the chambers are separated from each other by vacuum valves, except that the transfer system chamber and the storage chamber are in communication. In order to ensure that the system is in an ultrahigh vacuum environment, each chamber is provided with an independently operated vacuum pump, wherein the vacuum pump comprises a mechanical pump, a molecular pump, a cold pump and the like. In addition, the preparation system is also provided with a gas analysis and detection system quadrupole mass spectrometer, an in-situ monitoring system high-energy electron diffractometer, a beam measuring instrument and the like.
Preparatory work prior to growing the tunneling layer 80 by the MBE device includes:
1) opening a liquid nitrogen circulating system to reduce the pressure of the MBE growth chamber to 10-11Raising the temperature of the Al and In source furnace to a required value below torr, wherein the raising rate is generally set to 10-15 ℃/min;
2) and starting the nitrogen plasma auxiliary system, wherein the nitrogen flow and the plasma working power range are respectively 1-3 sccm and 300-350W, and preferably 2sccm and 340W.
In the growth process, a reflection type high-energy electron diffractometer (RHEED) is used for monitoring the surface of the substrate in real time, abundant growth front-end information can be obtained through diffraction images on a fluorescent screen, the temperature of the substrate is measured by a temperature measuring system, and the rotation speed of the substrate is kept at 20-50 rpm, preferably 30 rpm.
In the embodiment, nitrogen can not be directly used for material growth, but enters the radio frequency plasma equipment through a special gas path pipeline, is excited into plasma consisting of ions and atoms, and then is introduced into a growth chamber of the MBE equipment to participate in crystal growth. Because the nitrogen plasma contains partial nitrogen which is not ionized, when the plasma gas is introduced, the pressure of the MBE equipment growth chamber is inevitably and rapidly increased, so that the MBE equipment growth chamber is provided with a molecular pump and a condensation pump with high pumping speed, unreacted nitrogen atoms in a cavity in the growth process of a growth material can be rapidly pumped, and the vacuum degree of the system is maintained.
In the embodiment, the MBE equipment provides molecular beam flow required by growth through a source furnace, wherein the loading amount of a high-purity elemental source is related to the type and the usage amount of a crucible of the source furnace, a baffle switch of the source furnace is controlled by a computer software program, each source furnace is separated through a liquid nitrogen cold screen to avoid mutual interference, and liquid nitrogen is continuously introduced in the material growth to maintain the vacuum degree of a growth chamber.
In this example, MOCVD equipment used high purity H2As the carrier gas, TEGa or TMGa, TMAl, TMIn and NH were used, respectively3As Ga source, Al source, In source and N source, SiH may be used respectively4And Cp2Mg as n-type and p-type dopants, TeESi (tetraethyl silicon) and Si may also be used2H6As a Si source.
The LED chip manufactured by the ultraviolet light emitting diode epitaxial wafer in the embodiment has the advantages that the working voltage can be reduced by about 5% and the luminous brightness can be improved by about 10% under the test condition with the same current density.
In addition, the inventors of the present invention have also made experiments with other materials, process operations, and process conditions described in the present specification with reference to the above examples, and have obtained preferable results.
It should be understood that the technical solution of the present invention is not limited to the above-mentioned specific embodiments, and all technical modifications made according to the technical solution of the present invention fall within the protection scope of the present invention without departing from the spirit of the present invention and the protection scope of the claims.
Claims (10)
1. The utility model provides an ultraviolet emitting diode epitaxial wafer, includes n type layer, quantum well luminescent layer and the p type layer that sets gradually along the assigned direction, its characterized in that: the p-type layer comprises a p-type electron blocking layer, a tunneling layer and a p-type contact layer which are sequentially arranged along a specified direction, and the tunneling layer comprises a p-type Al layer which is sequentially arranged along the specified direction1-xInxN layer, InN layer and N-type Al1-yInyAnd the x is more than 0 and less than or equal to 0.6, and the y is more than 0 and less than or equal to 0.6.
2. The ultraviolet light emitting diode epitaxial wafer as claimed in claim 1, wherein: the p-type Al1-xInxThe In component content In the N layer is gradually increased along the designated direction; and/or, the n-type Al1-yInyThe In component content In the N layer gradually decreases In a prescribed direction.
3. The ultraviolet light emitting diode epitaxial wafer as claimed in claim 1, wherein: the p-type Al1-xInxThe thickness of the N layer is 5-10 nm; and/or the thickness of the InN layer is 1-3 nm; and/or, the n-type Al1-yInyThe thickness of the N layer is 5-10 nm.
4. The ultraviolet light emitting diode epitaxial wafer as claimed in claim 1, wherein: the n-type layer comprises an n-type AlGaN layer; and/or, the p-type Al1-xInxThe doping concentration of the N layer is 1019~1020cm-3(ii) a And/or, the n-type Al1-yInyThe doping concentration of the N layer is 1018~1019cm-3。
5. The ultraviolet light emitting diode epitaxial wafer as claimed in claim 1, wherein: the epitaxial wafer comprises a substrate, a buffer layer, a three-dimensional island-shaped AlN growth layer, a two-dimensional recovery AlN growth layer, an n-type AlGaN layer, a quantum well light-emitting layer and a p-type electron resistor which are sequentially arranged along a specified directionBarrier layer, p-type Al1-xInxN layer, InN layer, N-type Al1-yInyN-and p-type contact layers.
6. A manufacturing method of an ultraviolet light emitting diode epitaxial wafer comprises the steps of growing an n-type layer, a quantum well light emitting layer and a p-type layer respectively, and is characterized in that the step of growing the p-type layer comprises the following steps:
growing a p-type electron blocking layer,
sequentially growing p-type Al on the p-type electron blocking layer1-xInxN layer, InN layer and N-type Al1-yInyAn N layer, thereby forming a tunneling layer; and
and growing a p-type contact layer on the tunneling layer.
7. The manufacturing method according to claim 6, characterized by specifically comprising: growing the p-type Al by adopting a molecular beam epitaxy mode1-xInxN layer, InN layer and N-type Al1-yInyN layer, thereby forming a tunneling layer.
8. The manufacturing method according to claim 7, characterized by specifically comprising: growing the p-type Al in a molecular beam epitaxy device1-xInxN layer and N-type Al1-yInyWhen N layer is formed, the temperature in the growth chamber is 900-1000 ℃, and the pressure is 10-10~10- 11torr；
And/or when the InN layer grows by molecular beam epitaxy equipment, the temperature in the growth cavity is 700-800 ℃, and the pressure is 10-10~10-11torr。
9. The manufacturing method according to claim 8, characterized by specifically comprising: in growing the p-type Al1-xInxIn the process of the N layer, an In source is introduced In a gradually increasing mode; and/or, growing the n-type Al1-yInyIn the process of N layer, In source is introduced In a gradually decreasing mode.
10. The method of manufacturing according to claim 6, further comprising: firstly, a buffer layer, a three-dimensional island-shaped AlN growth layer and a two-dimensional recovery AlN growth layer are sequentially grown on a substrate, and then an n-type layer, a quantum well light-emitting layer and a p-type layer are sequentially grown on the two-dimensional recovery AlN growth layer.
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