CN113990899A - Display panel preparation method and display panel - Google Patents

Display panel preparation method and display panel Download PDF

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Publication number
CN113990899A
CN113990899A CN202111141344.0A CN202111141344A CN113990899A CN 113990899 A CN113990899 A CN 113990899A CN 202111141344 A CN202111141344 A CN 202111141344A CN 113990899 A CN113990899 A CN 113990899A
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China
Prior art keywords
layer
electrode layer
anode electrode
display panel
light
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CN202111141344.0A
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Chinese (zh)
Inventor
蒲洋
洪文进
许哲豪
郑浩旋
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HKC Co Ltd
Beihai HKC Optoelectronics Technology Co Ltd
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HKC Co Ltd
Beihai HKC Optoelectronics Technology Co Ltd
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Priority to CN202111141344.0A priority Critical patent/CN113990899A/en
Publication of CN113990899A publication Critical patent/CN113990899A/en
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/121Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/805Electrodes
    • H10K50/81Anodes
    • H10K50/813Anodes characterised by their shape
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/805Electrodes
    • H10K50/82Cathodes
    • H10K50/822Cathodes characterised by their shape
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/124Insulating layers formed between TFT elements and OLED elements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Geometry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

The invention discloses a display panel and a preparation method thereof, and belongs to the technical field of display. The preparation method of the display panel comprises the steps of providing an array substrate, preparing a spherical insulating layer on the array substrate, and sequentially preparing an anode electrode layer, a light-emitting film layer and a cathode electrode layer on the insulating layer, wherein the cathode electrode layer, the light-emitting film layer and the anode electrode layer above the insulating layer are all arc-shaped, and the cavity length between the cathode electrode layer and the anode electrode layer at each visual angle is equal by enabling the light-emitting film layer to emit light in an arc-shaped surface, so that the color cast is reduced, and the display effect is improved.

Description

Display panel preparation method and display panel
Technical Field
The invention relates to the technical field of display, in particular to a display panel and a preparation method thereof.
Background
With the development of the electro-optical Display technology and the semiconductor manufacturing technology, the requirement for the characteristics of the Display device is higher and higher, and the Organic light emitting semiconductor (OLED) of the top emission structure has the microcavity effect when emitting light. At present, organic light emitting semiconductors in common display panels are uniform rectangular preparation structures, and microcavity lengths (distances from an anode to a cathode) at different viewing angles are different under the action of a microcavity effect, so that the wavelength of the obtained enhanced light is different, and the color cast phenomenon of the display panel at different viewing angles is easily caused, and the display effect is influenced.
The above is only for the purpose of assisting understanding of the technical aspects of the present invention, and does not represent an admission that the above is prior art.
Disclosure of Invention
The invention mainly aims to provide a display panel preparation method and a display panel, and aims to solve the technical problems that in a preparation structure of the display panel in the prior art, due to a microcavity effect, color cast phenomena occur under different viewing angles easily, and the display effect is poor.
In order to achieve the above object, the present invention provides a method for manufacturing a display panel, including the steps of:
providing an array substrate;
preparing a spherical crown-shaped insulating layer on the array substrate;
sequentially preparing an anode electrode layer, a light-emitting film layer and a cathode electrode layer on the insulating layer;
the cathode electrode layer, the light-emitting film layer and the anode electrode layer above the insulating layer are all arc-shaped.
Optionally, the preparing a spherical crown-shaped insulating layer on the array substrate includes:
coating or depositing on the array substrate to form a protrusion;
photoetching the bulge to form an etched pattern;
and etching the bulge according to the etching pattern to form the spherical crown-shaped insulating layer.
Optionally, the sequentially preparing an anode electrode layer, a light-emitting film layer and a cathode electrode layer on the insulating layer includes:
sequentially coating, photoetching and etching the insulating layer to form an anode electrode layer;
and performing evaporation on the anode electrode layer to sequentially form a light-emitting film layer and a cathode electrode layer.
Optionally, the performing evaporation on the anode electrode layer to sequentially form a light emitting film layer and a cathode electrode layer includes:
preparing a pixel defining layer on the array substrate and the anode electrode layer;
and carrying out evaporation on the anode electrode layer according to the pixel defining layer to sequentially form a light-emitting film layer and a cathode electrode layer.
In addition, to achieve the above object, the present invention further provides a display panel, where the display panel includes an array substrate, and the display panel implements the display panel preparation method as described above when manufactured, and the display panel includes:
the insulating layer is in a spherical crown shape and is arranged on the array substrate;
the anode electrode layer is arranged on the array substrate and the insulating layer;
the light-emitting film layer is arranged on the anode electrode layer;
the cathode electrode layer is arranged on the light-emitting film layer;
the cathode electrode layer, the light-emitting film layer and the anode electrode layer above the insulating layer are all arc-shaped.
Optionally, the arc center of the cathode electrode layer, the arc center of the light-emitting film layer, and the arc center of the anode electrode layer above the insulating layer are all at the same point as the sphere center of the insulating layer.
Optionally, the insulating layer is hemispherical, and the cathode electrode layer, the light emitting film layer and the anode electrode layer above the insulating layer are all arc-shaped.
Optionally, the display panel further includes a pixel defining layer, the array substrate includes a thin film transistor, a drain of the thin film transistor is connected to the anode electrode layer, and the anode electrode layer is disposed between the array substrate and the pixel defining layer.
Optionally, a horizontal tangent of an upper surface of the cathode electrode layer is flush with an upper surface of the pixel defining layer.
In addition, in order to achieve the above object, the present invention further provides a display device, where the display device includes the display panel as described above and a microprocessor, where the microprocessor is disposed on one side of the display panel, and is configured to receive an external instruction and send display data to the display panel according to the external instruction.
The preparation method of the display panel comprises the steps of providing an array substrate, preparing a spherical insulating layer on the array substrate, and sequentially preparing an anode electrode layer, a light-emitting film layer and a cathode electrode layer on the insulating layer, wherein the cathode electrode layer, the light-emitting film layer and the anode electrode layer above the insulating layer are all arc-shaped, and the cavity length between the cathode electrode layer and the anode electrode layer at each visual angle is equal by enabling the light-emitting film layer to emit light in an arc-shaped surface, so that the color cast is reduced, and the display effect is improved.
Drawings
FIG. 1 is a first flowchart illustrating a method for fabricating a display panel according to a first embodiment of the present invention;
FIG. 2 is a second flowchart illustrating a method for manufacturing a display panel according to an embodiment of the invention;
FIG. 3 is a schematic block diagram of a first structure of a display panel manufacturing process according to a second embodiment of the present invention;
FIG. 4 is a schematic block diagram of a second structure of a display panel manufacturing process according to a second embodiment of the present invention;
FIG. 5 is a schematic block diagram of a third structure of a display panel manufacturing process according to a second embodiment of the present invention;
fig. 6 is a schematic block diagram of a partial structure of a display panel manufacturing process according to a second embodiment of the present invention.
The reference numbers illustrate:
reference numerals Name (R) Reference numerals Name (R)
10 Array substrate 102 Buffer layer
20 Thin film transistor 103 Gate insulating layer
30 Insulating layer 104 Interlayer insulating medium
40 Anode electrode layer 105 Planarization layer
50 Pixel defining layer 106 Semiconductor layer
60 Luminous film layer 107 Source electrode
70 Cathode electrode layer 108 Grid electrode
101 Glass substrate 109 Drain electrode
L1、L2 First chamber length, second chamber length A、B First and second viewing angles
The implementation, functional features and advantages of the objects of the present invention will be further explained with reference to the accompanying drawings.
Detailed Description
It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Example one
Referring to fig. 1, fig. 1 is a schematic flow chart illustrating a display panel manufacturing method according to a first embodiment of the present invention.
In this embodiment, the method for manufacturing the display panel includes the following steps:
step S10: an array substrate is provided.
The array substrate may include a glass substrate, a thin film transistor, a gate insulating layer, an interlayer insulating dielectric, and a planarization layer. The method comprises the steps of providing a glass substrate, and forming the array substrate through the film forming process, the photoetching process, the etching process and other process operations in sequence.
Step S20: and preparing a spherical crown-shaped insulating layer on the array substrate.
It is understood that the pixel defining layer is prepared on the flat layer of the array substrate, and the insulating layer is disposed on the flat layer of the array substrate and below the pixel defining layer. The insulating layer can be in a spherical crown shape (the spherical crown refers to a curved surface left after a spherical surface is cut by a plane), wherein the cross section of the insulating layer can be in a circular shape, and the cross section of the insulating layer can be in a semicircular shape or a minor arc bow (the arc of the arc is smaller than the semicircle). The radian of the section pattern of the insulating layer or the height of the spherical cap can be set according to actual requirements. The insulating layer is generally provided in a hemispherical shape.
Step S30: and sequentially preparing an anode electrode layer, a light-emitting film layer and a cathode electrode layer on the insulating layer.
The cathode electrode layer, the light-emitting film layer and the anode electrode layer above the insulating layer are all arc-shaped.
It is easy to understand that the anode electrode layer can be a total reflection anode electrode layer, and total reflection (total internal reflection) means that when light enters from a medium with a higher refractive index to a medium with a lower refractive index, if the incident angle is larger than a certain critical angle (the light is far away from the normal), the refracted light will disappear, and all the incident light will be reflected without entering the medium with the lower refractive index. The cathode electrode layer may be a semi-reflective anode electrode layer, and semi-reflective means that when light reaches the surface of the medium, a part of light enters the medium through refraction, and a part of light is reflected out.
It should be understood that the anode electrode layer is disposed on the flat layer and the insulating layer of the array substrate, the light emitting film layer is disposed on the anode electrode layer, and the cathode electrode layer is disposed on the light emitting film layer.
In the display panel manufacturing method of this embodiment, an array substrate is provided, a spherical crown-shaped insulating layer is manufactured on the array substrate, and an anode electrode layer, a light emitting film layer and a cathode electrode layer are sequentially manufactured on the insulating layer, wherein the cathode electrode layer, the light emitting film layer and the anode electrode layer above the insulating layer are all in an arc shape, and by making the light emitting film layer emit light in an arc-shaped surface, the cavity lengths between the cathode electrode layer and the anode electrode layer at each viewing angle are all equal, thereby reducing color shift and improving the display effect.
Further, referring to fig. 2, fig. 2 is a schematic diagram of a second process of the display panel manufacturing method according to the first embodiment of the invention. Based on the foregoing embodiment, in the method for manufacturing a display panel according to this embodiment, the step S20 includes:
step S201: and coating or depositing on the array substrate to form the projections.
It should be understood that, on the planar layer of the array substrate, the protrusions are formed through a coating process, the protrusions may be made of an organic material such as Polyimide (PI) or polymethyl methacrylate (PMMA), and the protrusions may also be aluminum oxide (Al2O3) formed through an atomic layer deposition process (ALD).
Step S202: and photoetching the bulge to form an etching pattern.
It is understood that, through the photolithography process, an etching pattern may be formed on the surface of the protrusion, and the etching pattern determines the shape of the protrusion finally formed after etching. For example, when the etching pattern is semicircular, a spherical cap-shaped insulating layer may be formed.
Step S203: and etching the bulge according to the etching pattern to form the spherical crown-shaped insulating layer.
It is understood that Plasma (Plasma) etching is used according to an etching pattern (when the projections are an organic material, a gas such as oxygen or carbon tetrachloride is used as an etching gas). Inductively Coupled Plasma (ICP) etching (when the protrusions are alumina, boron trichloride (BCl3) is used as an etching gas) may also be used according to the etching pattern, and the protrusions become spherically patterned substrates after etching.
In this embodiment, the step S30 includes:
step S301: and sequentially coating, photoetching and etching the insulating layer to form an anode electrode layer.
It can be understood that the anode electrode layer capable of realizing total reflection is formed by sequentially performing coating process, photoetching process, etching process and other process operations on the spherical crown-shaped insulating layer, and the anode electrode layer on the insulating layer is arc-shaped because the anode electrode layer is uniformly covered on the spherical crown-shaped insulating layer. The anode electrode layer may be a composite transparent conductive film (ITO/Ag/ITO). Wherein the anode electrode layer is connected to the drain of the thin film transistor.
Step S302: and preparing a pixel defining layer on the array substrate and the anode electrode layer.
It is easy to understand that the pixel defining layer is formed by sequentially performing deposition process, exposure process and other process operations on the planarization layer and the anode electrode layer of the array substrate. The pixel defining layer is arranged above the flat layer and part of the anode electrode layer of the array substrate.
Step S303: and carrying out evaporation on the anode electrode layer according to the pixel defining layer to sequentially form a light-emitting film layer and a cathode electrode layer.
It should be understood that, the evaporation is performed on the arc-shaped anode electrode layer, the light-emitting film layer is formed first, and since the light-emitting film layer uniformly covers the arc-shaped anode electrode layer, the light-emitting film layer is arc-shaped, and the edge of the light-emitting film layer is connected with the layer wall of the pixel defining layer. And (3) performing evaporation on the arc-shaped luminous film layer, and forming a cathode electrode layer again, wherein the cathode electrode layer is uniformly covered on the arc-shaped luminous film layer and is arc-shaped, and the edge of the cathode electrode layer is connected with the layer wall of the pixel defining layer.
In the embodiment, multiple process operations are performed on the array substrate, the insulating layer, the anode electrode layer, the pixel defining layer, the light emitting film layer and the cathode electrode layer are sequentially formed, the insulating layer is in a spherical protrusion shape, the anode electrode layer, the light emitting film layer and the cathode electrode layer are uniformly covered on the next layer, the anode electrode layer is connected to the drain electrode of the thin film transistor, and the edges of the light emitting film layer and the cathode electrode layer are connected with the layer wall of the pixel defining layer, so that the light emitting film layer emits light in an arc-shaped surface, the cavity length from the cathode electrode layer to the anode electrode layer at each view angle is equal, and the display effect is further improved.
Example two
In addition, an embodiment of the present invention further provides a display panel, where the display panel includes an array substrate 10, and the display panel realizes the above display panel preparation method during manufacturing, and based on the above embodiment, the display panel includes:
the insulating layer 30 is in a spherical crown shape, and is arranged on the array substrate 10;
an anode electrode layer 40 disposed on the array substrate 10 and the insulating layer 30;
a light emitting film layer 60 disposed on the anode electrode layer 40;
a cathode electrode layer 70 disposed on the light emitting film layer 60;
the cathode electrode layer 70, the light-emitting film layer 60 and the anode electrode layer 40 above the insulating layer 30 are all arc-shaped.
It should be noted that, as shown in fig. 3, fig. 3 is a schematic block diagram of a first structure of a display panel manufacturing process in the second embodiment of the present invention, the array substrate 10 may include a glass substrate 101, a thin film transistor 20, a gate insulating layer 130, an interlayer insulating medium 104, and a planarization layer 105, and the thin film transistor 20 includes a semiconductor layer 106, a source electrode 107, a gate electrode 108, and a drain electrode 109.
It should be understood that the insulating layer 30 may have a spherical crown shape (spherical crown refers to a curved surface left after a spherical surface is cut by a plane), wherein the cross-sectional shape of the insulating layer 30 may be a circular shape, and the cross-sectional shape of the insulating layer 30 may be a semicircular shape or a minor arc bow (the arc of the arc is smaller than a semicircle). The radian of the cross-sectional pattern of the insulating layer 30 or the height of the spherical cap can be set according to actual requirements. The insulating layer 30 is generally provided in a hemispherical shape.
It is easy to understand that, as shown in fig. 4, fig. 4 is a schematic block diagram of a second structure of a display panel manufacturing process in the second embodiment of the present invention, since the insulating layer 30 is spherically protruded, and the anode electrode layer 40 is uniformly covered on the insulating layer 30, the display panel is further provided with a pixel defining layer 50, as shown in fig. 5, fig. 5 is a schematic block diagram of a third structure of a display panel manufacturing process in the second embodiment of the present invention, the light emitting film layer 60 is uniformly covered on the arc-shaped anode electrode layer 40, the cathode electrode layer 70 is uniformly covered on the light emitting film layer 60, edges of the light emitting film layer 60 and the cathode electrode layer 70 are connected to the wall of the pixel defining layer 50, so that the cathode electrode layer 70, the light emitting film layer 60 and the anode electrode layer 40 above the insulating layer 30 are all arc-shaped, the light emitting film layer 60 emits light with an arc-shaped surface, and the cavity length between the cathode electrode layer 70 and the anode electrode layer 40 is equal under each viewing angle, thereby reducing color cast under different visual angles and improving the display effect.
Further, in the present embodiment, the arc center of the cathode electrode layer 70, the arc center of the light emitting film layer 60, and the arc center of the anode electrode layer 40 above the insulating layer 30 are all the same point as the sphere center of the insulating layer 30.
It is easy to understand that, in order to ensure that the insulating layer 30 forms a spherical crown shape, the anode electrode layer 40, the light-emitting film layer 60 and the cathode electrode layer 70 are sequentially and uniformly stacked above the insulating layer 30, so that the anode electrode layer 40 above the cathode electrode layer 70, the light-emitting film layer 60 and the insulating layer 30 is in an arc shape. The arc center of the cathode electrode layer 70, the arc center of the luminescent film layer 60 and the arc center of the anode electrode layer 40 above the insulating layer 30 are all arranged at the same point as the sphere center of the insulating layer 30, so that the anode electrode layer 40, the luminescent film layer 60 and the cathode electrode layer 70 with uniform texture are all arc-shaped.
The insulating layer 30 has a hemispherical shape, and the cathode electrode layer 70, the light emitting film layer 60, and the anode electrode layer 40 above the insulating layer 30 are all arc-shaped.
It is easy to understand that the insulating layer 30 may be formed in a hemispherical shape, in which case the cross-sectional pattern of the insulating layer 30 is a semicircle, and accordingly, the cathode electrode layer 70, the light emitting film layer 60 and the anode electrode layer 40 above the insulating layer 30 are formed in a circular arc shape.
The display panel further includes a pixel defining layer 50, and the anode electrode layer 40 is disposed between the array substrate 10 and the pixel defining layer 50.
The array substrate 10 includes a thin film transistor 20, and a drain electrode 109 of the thin film transistor 20 is connected to the anode electrode layer 40.
It is understood that a portion of the anode electrode layer 40 is covered on the insulating layer 30 and has an arc shape. The other portion of the anode electrode layer 40 is connected to the drain electrode 109 of the thin film transistor 20 and disposed between the array substrate 10 and the pixel defining layer 50.
The upper surface of the cathode electrode layer 70 is horizontally tangent to be flush with the upper surface of the pixel defining layer 50.
It is understood that, in order to ensure higher light output and reduce the fabrication of other layers, the height of the insulating layer 30 may be set lower than the height of the pixel defining layer 50, and the horizontal tangent line of the upper surface of the cathode electrode layer 70 is aligned with the upper surface of the pixel defining layer 50 by properly setting the thicknesses of the anode electrode layer 40, the light-emitting film layer 60 and the cathode electrode layer 70.
It should be understood that, as shown in fig. 6, fig. 6 is a schematic block diagram of a partial structure of a manufacturing process of a display panel in the second embodiment of the present invention, an anode electrode layer 40, a light emitting film layer 60 and a cathode electrode layer 70 form a light emitting structure, a represents a first viewing angle, B represents a second viewing angle, L1 at the first viewing angle is a first cavity length, and L2 at the second viewing angle is a second cavity length, since the light emitting film layer 60 emits light in an arc-shaped surface, the cavity lengths between the cathode electrode layer 70 and the anode electrode layer 40 at different viewing angles are equal (e.g., L1 is equal to L2), so that color shift is reduced, and display effect is improved.
In this embodiment, a spherical insulating layer 30 is disposed on an array substrate 10, an anode electrode layer 40 is disposed on the array substrate 10 and the insulating layer 30, and an arc-shaped light-emitting film layer 60 and an arc-shaped cathode electrode layer 70 are sequentially disposed on the arc-shaped anode electrode layer 40, wherein the arc center of the cathode electrode layer 70, the arc center of the light-emitting film layer 60, and the arc center of the anode electrode layer 40 above the insulating layer 30 are all at the same point as the spherical center of the insulating layer 30, the insulating layer 30 is hemispherical, the cathode electrode layer 70, the light-emitting film layer 60, and the anode electrode layer 40 above the insulating layer 30 are all arc-shaped, the display panel further includes a pixel defining layer 50, the array substrate 10 includes a thin film transistor 20, a drain 109 of the thin film transistor 20 is connected with the anode electrode layer 40, the anode electrode layer 40 is disposed between the array substrate 10 and the pixel defining layer 50, and a horizontal tangent line of an upper surface of the cathode electrode layer 70 is flush with an upper surface of the pixel defining layer 50, the light emitting film 60 emits light in an arc surface, and the cavity length between the cathode electrode layer 70 and the anode electrode layer 40 at each viewing angle is equal, so that the color shift at different viewing angles is reduced, and the light emitting rate and the display effect are improved.
It should be understood that the above is only an example, and the technical solution of the present invention is not limited in any way, and in a specific application, a person skilled in the art may set the technical solution as needed, and the present invention is not limited thereto.
It should be noted that the above-described work flows are only exemplary, and do not limit the scope of the present invention, and in practical applications, a person skilled in the art may select some or all of them to achieve the purpose of the solution of the embodiment according to actual needs, and the present invention is not limited herein.
In addition, technical details that are not described in detail in this embodiment may be referred to a display panel preparation method and a display panel provided in any embodiment of the present invention, and are not described herein again.
Further, it is to be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or system that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or system. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a process, method, article, or system that comprises the element.
The above-mentioned serial numbers of the embodiments of the present invention are merely for description and do not represent the merits of the embodiments.
The above description is only a preferred embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications of equivalent structures and equivalent processes, which are made by using the contents of the present specification and the accompanying drawings, or directly or indirectly applied to other related technical fields, are included in the scope of the present invention.

Claims (10)

1. A preparation method of a display panel is characterized by comprising the following steps:
providing an array substrate;
preparing a spherical crown-shaped insulating layer on the array substrate;
sequentially preparing an anode electrode layer, a light-emitting film layer and a cathode electrode layer on the insulating layer;
the cathode electrode layer, the light-emitting film layer and the anode electrode layer above the insulating layer are all arc-shaped.
2. The method for manufacturing a display panel according to claim 1, wherein the step of manufacturing a spherical crown-shaped insulating layer on the array substrate comprises:
coating or depositing on the array substrate to form a protrusion;
photoetching the bulge to form an etched pattern;
and etching the bulge according to the etching pattern to form the spherical crown-shaped insulating layer.
3. The method for manufacturing a display panel according to claim 1, wherein the sequentially manufacturing an anode electrode layer, a light-emitting film layer and a cathode electrode layer on the insulating layer comprises:
sequentially coating, photoetching and etching the insulating layer to form an anode electrode layer;
and performing evaporation on the anode electrode layer to sequentially form a light-emitting film layer and a cathode electrode layer.
4. The method for manufacturing a display panel according to claim 3, wherein the step of performing evaporation on the anode electrode layer to sequentially form a light-emitting film layer and a cathode electrode layer comprises:
preparing a pixel defining layer on the array substrate and the anode electrode layer;
and carrying out evaporation on the anode electrode layer according to the pixel defining layer to sequentially form a light-emitting film layer and a cathode electrode layer.
5. A display panel comprising an array substrate, wherein the display panel realizes the display panel preparation method according to any one of claims 1 to 4 when manufactured, and the display panel comprises:
the insulating layer is in a spherical crown shape and is arranged on the array substrate;
the anode electrode layer is arranged on the array substrate and the insulating layer;
the light-emitting film layer is arranged on the anode electrode layer;
the cathode electrode layer is arranged on the light-emitting film layer;
the cathode electrode layer, the light-emitting film layer and the anode electrode layer above the insulating layer are all arc-shaped.
6. The display panel according to claim 5, wherein an arc center of the cathode electrode layer, an arc center of the light emitting film layer, and an arc center of the anode electrode layer over the insulating layer are all at the same point as a sphere center of the insulating layer.
7. The display panel according to claim 6, wherein the insulating layer has a hemispherical shape, and the cathode electrode layer, the light emitting film layer, and the anode electrode layer over the insulating layer have arc shapes.
8. The display panel of claim 5, further comprising a pixel defining layer, wherein the anode electrode layer is disposed between the array substrate and the pixel defining layer.
9. The display panel according to claim 8, wherein the array substrate includes a thin film transistor, and a drain electrode of the thin film transistor is connected to the anode electrode layer.
10. The display panel according to claim 8, wherein a horizontal tangent of an upper surface of the cathode electrode layer is flush with an upper surface of the pixel defining layer.
CN202111141344.0A 2021-09-28 2021-09-28 Display panel preparation method and display panel Pending CN113990899A (en)

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Application publication date: 20220128