CN113960446A - Temperature-controllable SiC chip power cycle experimental device - Google Patents

Temperature-controllable SiC chip power cycle experimental device Download PDF

Info

Publication number
CN113960446A
CN113960446A CN202111178666.2A CN202111178666A CN113960446A CN 113960446 A CN113960446 A CN 113960446A CN 202111178666 A CN202111178666 A CN 202111178666A CN 113960446 A CN113960446 A CN 113960446A
Authority
CN
China
Prior art keywords
chip
heater
sic
sic chip
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN202111178666.2A
Other languages
Chinese (zh)
Other versions
CN113960446B (en
Inventor
代岩伟
昝智
赵帅
李妍凝
秦飞
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beijing University of Technology
Original Assignee
Beijing University of Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing University of Technology filed Critical Beijing University of Technology
Priority to CN202111178666.2A priority Critical patent/CN113960446B/en
Publication of CN113960446A publication Critical patent/CN113960446A/en
Application granted granted Critical
Publication of CN113960446B publication Critical patent/CN113960446B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851Testing of integrated circuits [IC]
    • G01R31/2855Environmental, reliability or burn-in testing
    • G01R31/2872Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation
    • G01R31/2874Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation related to temperature
    • G01R31/2875Environmental, reliability or burn-in testing related to electrical or environmental aspects, e.g. temperature, humidity, vibration, nuclear radiation related to temperature related to heating

Landscapes

  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Resistance To Weather, Investigating Materials By Mechanical Methods (AREA)

Abstract

The invention discloses a temperature-controllable SiC chip power cycle experimental device, which comprises: the device comprises a box body, a bearing table, an environmental heater, a cooling water tank, silicone grease, a SiC chip, an Al2O3 insulating layer, a chip heater and a thermocouple. The device provides the inside ambient temperature of box through the ambient heater, simulates the produced heat of SiC chip self when the work through the chip heater, later accelerates the cooling of SiC chip through the cooling water tank, accomplishes a power cycle. The stable power supply is provided for the environmental heater and the chip heater through the stabilized voltage power supply, and the cycle times and the cycle time of the device are controlled through the control computer, so that the purpose of accelerating the experiment is achieved.

Description

Temperature-controllable SiC chip power cycle experimental device
Technical Field
The invention relates to the technical field of electronic component packaging and testing, in particular to a temperature-controllable SiC chip power cycle experimental device.
Background
With the rapid development of SiC power chips, the requirements for the performance and reliability of SiC chips in some emerging fields become more stringent. Generally, the performance and reliability of a SiC power chip are related to the temperature of the environment in which the chip operates and the heating condition of the chip itself, for example, the switching and conduction of the chip during operation, the change of the external environment, and the like cause the temperature change of the chip itself and the environment in which the chip is located. The temperature variation caused by these factors ranges from 0 to 100 ℃ and the influence time can be a few microseconds or a few months. Therefore, from research and development to mass production, each stage needs to be subjected to power cycle experiments, and the aging, fatigue and other processes of internal components of the chip are accelerated by continuously and frequently heating up, keeping and cooling down the chip, so that the typical failure mode of the chip is finally obtained to know the performance and reliability of the chip. The existing power cycle device has some problems, such as too slow heating of the chip, uneven heating and the like, which have certain influence on accurately predicting the service life and failure mode of the chip, so that the problems can be improved.
Disclosure of Invention
In order to accurately predict the service life and the failure mode of the SiC chip, shorten the experimental time and accelerate the experimental process, the invention provides a temperature-controllable SiC chip power cycle experimental device. The device provides the inside ambient temperature of box through the ambient heater, simulates the produced heat of SiC chip self when the work through the chip heater, later accelerates the cooling of SiC chip through the cooling water tank, accomplishes a power cycle. The stable power supply is provided for the environmental heater and the chip heater through the stabilized voltage power supply, and the cycle times and the cycle time of the device are controlled through the control computer, so that the purpose of accelerating the experiment is achieved.
The technical scheme of the invention is as follows:
a temperature-controllable chip power cycle device, comprising: box, plummer, environmental heater, cooling water tank, silicone grease, SiC chip, Al2O3Insulating layer, chip heater and thermocouple.
The box body is divided into an inner layer and an outer layer, wherein the outer layer is used for bearing load, and the inner layer is used for preserving heat; the bearing tables are symmetrically fixed in the middle of the inner layer of the box body and used for bearing the cooling water tank. The environment heater is fixed on the side wall of the inner layer of the box body and used for providing stable temperature for the internal environment of the box body and simulating the environment temperature of the SiC chip under the actual working condition.
The cooling water tank cross frame is placed on the two bearing tables, three holes in the middle of one side are water inlets, and three holes in the lower portion of the other side are water outlets, so that the SiC chip can be rapidly cooled. The silicone grease is coated on the middle position of the upper surface of the cooling water tank, and the SiC chip is placed on the silicone grease. Al (Al)2O3The insulating layer is positioned between the SiC chip and the chip heater; chip heater on Al2O3An insulating layer; the thermocouple is suspended two millimeters above the chip heater and is used for monitoring the temperature of the SiC chip in real time. The thermocouple is suspended above the chip heater and is connected by the thermocouple support.
Furthermore, the middle part of the box door of the box body is made of visible high-temperature-resistant glass for observing the internal experimental condition of the box body.
Further, the silicone grease is used for accelerating the heat on the SiC chip to be transferred to the cooling water tank, and the cooling effect of the cooling water tank is enhanced.
Further, Al2O3The insulating layer is positioned between the SiC chip and the chip heater and is bonded to the SiC chip and the chip heater through the adhesive for more uniformly transferring heat, so that the chip heater can more uniformly heat the SiC chip, and the actual working condition can be better simulated.
Further, the chip heater is bonded to the Al by an adhesive2O3And the upper surface of the insulating layer is used for heating the SiC chip to a specified temperature.
Furthermore, the chip heater (8) is controlled by a control computer to heat, and the control computer is connected with a stabilized voltage power supply.
A temperature-controllable SiC chip power cycle experimental method comprises the following steps: the surface of the SiC chip is heated more uniformly to increase the temperature through the spiral heating pipe of the chip heater; and adding a layer of Al with the thickness of 1 micron between the chip heater and the SiC chip2O3The insulating layer disperses the heat transfer, so that the heat receiving rate of the SiC chip is more uniform, the heat generated by the SiC chip in the actual use process is more appropriately simulated in the mode, and the service life and the failure mode of the SiC chip are more accurately predicted.
Compared with the prior art, the temperature-controllable SiC chip power cycle experimental device and method provided by the invention can be used for realizing the special spiral structure of the chip heater and Al2O3The insulating layer uniformly transfers the heat generated by the chip heater to the surface of the SiC chip, so that the actual use working condition of the SiC chip is simulated more truly and accurately in the experiment, more accurate experiment data and results are obtained, and the service life and the failure mode of the SiC chip are predicted more conveniently and accurately.
Drawings
FIG. 1 is a schematic structural diagram of a temperature-controllable SiC chip power cycle experimental apparatus according to an embodiment of the present invention
FIG. 2a is a schematic diagram of a power cycle experiment apparatus for a temperature-controllable SiC chip according to an embodiment of the present invention
FIG. 2b is a schematic diagram of a power cycle test apparatus for a temperature-controllable SiC chip according to an embodiment of the present invention
Detailed Description
In order that the present invention may be more clearly understood, specific embodiments of the present invention will be described below in detail with reference to the accompanying drawings. For convenience of description, the components in the structures of the drawings of the embodiments are not normally scaled, and therefore do not represent the actual relative sizes of the structures in the embodiments.
A temperature-controllable SiC chip power cycle experimental device is provided, as shown in FIG. 1. It includes: the device comprises a box body (1), a bearing platform (2), an environmental heater (3), a cooling water tank (4), silicone grease (5), a SiC chip (6) and Al2O3The device comprises an insulating layer (7), a chip heater (8), a thermocouple (9), a thermocouple support (10), a control computer and a voltage-stabilized power supply.
As shown in fig. 1, the bearing table (201) and the bearing table (202) are symmetrically positioned in the middle of the interior of the box body (1); the environment heater (3) is arranged on the rear wall of the inner side of the box body (1); the cooling water tank (4) is transversely arranged on the two bearing tables (2), three round holes with the same size are formed in the middle of the left side of the cooling water tank (4) and serve as water inlets (401), and three round holes with the same size are formed in the lower portion of the right side of the cooling water tank (4) and serve as water outlets (402); the silicone grease (5) is coated on the middle position of the upper surface of the cooling water tank (4) and is placed on the silicone greasePlacing a SiC chip (6); the Al is2O3An insulating layer (7) is disposed on the SiC chip (6) with a chip heater (8), Al thereon2O3The upper surface and the lower surface of the insulating layer (7) are respectively bonded to the SiC chip and the chip heater through adhesive; the thermocouple (9) is suspended two millimeters above the chip heater (8), and a thermocouple support (10) is arranged on the thermocouple (9).
The box body (1) is divided into two layers, an outer layer (101) of the box body is a metal frame and provides support for the whole structure, an inner layer (102) of the box body is a heat insulation layer, the environment temperature in the box body provided by the environment heater (3) is kept at a set temperature, and the middle part of a box body door (103) is provided with visual glass (104) for observing the internal condition of the box body.
Plummer (2) have two, plummer (201) and plummer (202) symmetry lie in box (1) inboard middle part position, provide the support for parts such as cooling water tank (4).
The environment heater (3) provides a specified temperature for the internal environment of the box body (1), and is combined with the heat-insulating layer of the inner layer (102) of the box body to keep the internal environment temperature of the box body at a specified experimental temperature.
The cooling water tank (4) is used for cooling the SiC chip (6). The left side and the right side of the water purifier are respectively provided with three round holes with the same size, wherein the three round holes (401) in the middle of the left side are water inlets, and the three round holes (402) in the lower part of the right side are water outlets. The cooling water tank (4) is used for cooling the SiC chip (6) of the experiment target, and after the SiC chip (6) is rapidly heated to the specified temperature by the chip heater (8) and is kept for a certain time, the cooling water tank is used for rapidly cooling the SiC chip (6) so as to achieve the purpose of accelerating the experiment.
The silicone grease (5) provides higher heat dissipation rate for the SiC chip (6), strengthens the effect of the cooling water tank (4), and enables the heat of the SiC chip (6) to be taken away by the cooling water tank (4) more quickly.
The SiC chip (6) may be a silicon carbide based MOSFET chip.
The Al is2O3The insulating layer (7) functions to conduct the heat generated by the chip heater (8) more uniformly to the SiC chip (6) by its own properties, and it is non-conductive in the solid state and does not cause a short circuit phenomenon of the chip.
After the chip heater (8) is electrified, a large amount of heat can be rapidly generated to enable the SiC chip (6) to reach the specified temperature and keep the temperature, and due to the spiral structure, the SiC chip is heated more uniformly. Then, the SiC chip (6) is rapidly cooled by the cooling water tank (4). The chip heater (8) is matched with the cooling water tank (4) to carry out primary circulation on the SiC chip (6).
The thermocouple (9) is used for measuring the temperature of the SiC chip (6) in real time.
The thermocouple support (10) is used for fixing the thermocouple (9).
The temperature-controllable SiC chip power circulation experimental device is characterized in that a specified temperature is provided for the interior of a box body (1) through an environmental heater (3), and the temperature in the box body is always kept at a set constant temperature by combining with a heat-insulating layer (102) on the inner side of the box body; then, the temperature of the SiC chip (6) to be tested is raised to a specified temperature by the chip heater (8) through a control computer, wherein Al between the SiC chip (6) and the chip heater (8)2O3The insulating layer (7) can conduct heat generated by the heating pipe of the chip heater (8) to the surface of the SiC chip (6) more uniformly so as to better simulate the working condition of the actual SiC chip; then, the heat of the SiC chip (6) is taken away through the cooling water tank (4) at the lower part of the SiC chip (6), the temperature of the SiC chip (6) is rapidly reduced, wherein the silicone grease (5) between the SiC chip (6) and the cooling water tank (4) provides higher heat dissipation rate for the SiC chip (6), the effect of the cooling water tank (4) is enhanced, and the heat of the SiC chip (6) is taken away by the cooling water tank (4) more quickly. The SiC chip (6) completes one power cycle, a stable power supply is provided for the environmental heater (3) and the chip heater (8) through a voltage-stabilized power supply, and the cycle number and the time of each cycle can be set through a control computer, so that an accelerated life test is carried out on the SiC chip. In particular, a special coiled heating tube and Al due to the chip heater (8)2O3The mutual cooperation of insulating layer (7) makes being heated of SiC chip more even, makes the experiment more accurate, and the data is more reliable.

Claims (7)

1. A temperature-controllable SiC chip power cycle experimental device is characterized in thatIs characterized by comprising the following steps: box, plummer, environmental heater, cooling water tank, silicone grease, SiC chip, Al2O3An insulating layer, a chip heater and a thermocouple;
the box body is divided into an inner layer and an outer layer, wherein the outer layer is used for bearing load, and the inner layer is used for preserving heat; the two bearing tables are symmetrically fixed in the middle of the inner layer of the box body and used for bearing the cooling water tank; the environment heater is fixed on the side wall of the inner layer of the box body and used for providing stable temperature for the internal environment of the box body and simulating the environment temperature of the SiC chip under the actual working condition;
the cooling water tank cross frame is placed on the two bearing tables, three holes in the middle of one side are water inlets, and three holes in the lower part of the other side are water outlets, so that the SiC chip can be rapidly cooled; the silicone grease is coated on the middle position of the upper surface of the cooling water tank, and the SiC chip is placed on the silicone grease; al (Al)2O3The insulating layer is positioned between the SiC chip and the chip heater; chip heater on Al2O3An insulating layer; the thermocouple is suspended at two millimeters above the chip heater and is used for monitoring the temperature of the SiC chip in real time; the thermocouple is suspended above the chip heater and is connected by the thermocouple support.
2. The SiC chip power cycle experimental device with the controllable temperature as claimed in claim 1, wherein the middle part of the box door of the box body is made of visual high temperature resistant glass for observing the experimental conditions inside the box body.
3. The SiC chip power cycle experimental device with the controllable temperature as claimed in claim 1, wherein the silicone grease is used for accelerating the heat transfer from the SiC chip to the cooling water tank, so as to enhance the cooling effect of the cooling water tank.
4. The SiC chip power cycle experimental device with controllable temperature of claim 1, wherein Al is2O3The insulating layer is arranged between the SiC chip and the chip heater and is bonded to the SiC chip and the chip heater through adhesive for uniformly transferring heat so as to ensure that the chip heaterThe SiC chip is heated more uniformly by the heater to simulate the actual working condition.
5. The temperature-controllable SiC chip power cycle experimental device of claim 1, wherein the chip heater is bonded to Al by adhesive2O3And the upper surface of the insulating layer is used for heating the SiC chip to a specified temperature.
6. The SiC chip power cycle experimental device with the controllable temperature as claimed in claim 1, wherein the chip heater (8) is controlled by a control computer for heating, and the control computer is connected with a regulated power supply.
7. The temperature-controllable SiC chip power cycle experimental device of claim 1, wherein the experimental method of the device is that the surface of the SiC chip is heated more uniformly by the spiral heating tube of the chip heater; and adding a layer of 1 micron Al between the chip heater and the SiC chip2O3The insulating layer disperses the heat transfer, so that the SiC chip is uniformly heated, the heat generated by the SiC chip in the actual use process is simulated, and the service life and the failure mode of the SiC chip are predicted more accurately.
CN202111178666.2A 2021-10-10 2021-10-10 SiC chip power cycle experimental apparatus of controllable temperature Active CN113960446B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202111178666.2A CN113960446B (en) 2021-10-10 2021-10-10 SiC chip power cycle experimental apparatus of controllable temperature

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202111178666.2A CN113960446B (en) 2021-10-10 2021-10-10 SiC chip power cycle experimental apparatus of controllable temperature

Publications (2)

Publication Number Publication Date
CN113960446A true CN113960446A (en) 2022-01-21
CN113960446B CN113960446B (en) 2023-10-10

Family

ID=79463289

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202111178666.2A Active CN113960446B (en) 2021-10-10 2021-10-10 SiC chip power cycle experimental apparatus of controllable temperature

Country Status (1)

Country Link
CN (1) CN113960446B (en)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104330277A (en) * 2014-11-14 2015-02-04 昆山海益博散热器有限公司 Refrigeration chip type heat pipe performance testing device
CN207221947U (en) * 2017-02-20 2018-04-13 广东工业大学 A kind of segmented micro-fluidic chip temperature regulating device
CN108704591A (en) * 2018-08-07 2018-10-26 山东金德新材料有限公司 A kind of integrated silicon carbide microchannel reactor of collection heat-exchange system
CN109433287A (en) * 2018-09-27 2019-03-08 天津航天瑞莱科技有限公司 A kind of cooling water tank with heat preservation temperature controlling function
CN109738322A (en) * 2019-01-23 2019-05-10 重庆理工大学 The quick thermal fatigue test device of electric iron heated type and experimental method
CN112433138A (en) * 2020-11-09 2021-03-02 桂林电子科技大学 IGBT module temperature and stress testing device and method capable of generating heat through power circulation
CN112858910A (en) * 2020-12-24 2021-05-28 南京能晶电子科技有限公司 A simulation charging system for test of lithium cell chip

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104330277A (en) * 2014-11-14 2015-02-04 昆山海益博散热器有限公司 Refrigeration chip type heat pipe performance testing device
CN207221947U (en) * 2017-02-20 2018-04-13 广东工业大学 A kind of segmented micro-fluidic chip temperature regulating device
CN108704591A (en) * 2018-08-07 2018-10-26 山东金德新材料有限公司 A kind of integrated silicon carbide microchannel reactor of collection heat-exchange system
CN109433287A (en) * 2018-09-27 2019-03-08 天津航天瑞莱科技有限公司 A kind of cooling water tank with heat preservation temperature controlling function
CN109738322A (en) * 2019-01-23 2019-05-10 重庆理工大学 The quick thermal fatigue test device of electric iron heated type and experimental method
CN112433138A (en) * 2020-11-09 2021-03-02 桂林电子科技大学 IGBT module temperature and stress testing device and method capable of generating heat through power circulation
CN112858910A (en) * 2020-12-24 2021-05-28 南京能晶电子科技有限公司 A simulation charging system for test of lithium cell chip

Also Published As

Publication number Publication date
CN113960446B (en) 2023-10-10

Similar Documents

Publication Publication Date Title
US3979671A (en) Test fixture for use in a high speed electronic semiconductor chip test system
US7129732B1 (en) Substrate test apparatus and method of testing substrates
CN110673015B (en) Test method for simulating heating power and surface temperature of chip
Hanß et al. Transient thermal analysis as measurement method for IC package structural integrity
WO2010041317A1 (en) Interface member, test section unit, and electronic component testing device
CN109444215B (en) Unsteady ultra-high temperature heat insulation performance test device and test method
Brincker et al. Effects of thermal cycling on aluminum metallization of power diodes
CN114152863B (en) Intelligent temperature-controllable GaN power cycle experiment device
CN115932542A (en) High-low temperature equipment for chip test
CN113960446A (en) Temperature-controllable SiC chip power cycle experimental device
Gleichauf et al. Reliability testing of solder joints under combined cyclic thermal and bending load for automotive applications
CN206096193U (en) A environment case for electronic components electrical property in situ test
Stoyanov et al. Modelling methodology for thermal analysis of hot solder dip process
Benabou et al. Continuum damage approach for fatigue life prediction of viscoplastic solder joints
CN205482351U (en) Split type thermal shock stove and thermal shock resistance experimental apparatus
CN115728344A (en) Test piece and test device for checking heat insulation performance of low-thermal conductivity material
CN111551462B (en) Device and method for testing thermal fatigue of micro-welding point
Hung et al. Bonding wire life prediction model of the power module under power cycling test
CN111624501A (en) Constant temperature box for constant temperature charging and discharging test of power battery
Hegde et al. Finite element analysis of lead-free surface mount devices
Pan et al. High-Temperature Constitutive Behavior of Electroplated Copper TGV through Numerical Simulation
CN102541110A (en) Device and method for testing temperature control based on temperature derating curve of modular power supply
JP4593815B2 (en) Temperature condition applying device
CN111060549A (en) Gradient temperature load loading device and method for accelerated aging of material
CN111103209A (en) Rapid test method for fatigue resistance of ceramic lining plate

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant